CN115602661B - Detection device and detection method of light-emitting element - Google Patents
Detection device and detection method of light-emitting element Download PDFInfo
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- CN115602661B CN115602661B CN202110776301.3A CN202110776301A CN115602661B CN 115602661 B CN115602661 B CN 115602661B CN 202110776301 A CN202110776301 A CN 202110776301A CN 115602661 B CN115602661 B CN 115602661B
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- 238000001514 detection method Methods 0.000 title claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 claims abstract description 111
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- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims description 14
- 230000002159 abnormal effect Effects 0.000 claims description 8
- 238000012360 testing method Methods 0.000 claims description 7
- 238000004020 luminiscence type Methods 0.000 claims description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
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- 230000008439 repair process Effects 0.000 abstract description 8
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- 238000005516 engineering process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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Abstract
The application discloses a detection device and a detection method of a light-emitting element, which are used for detecting the light-emitting element on a growth substrate, wherein a first electrode and a second electrode are arranged on the light-emitting element, the length of the first electrode is longer than that of the second electrode, the detection device comprises a bottom plate, a first metal layer, a buffer layer and a second metal layer which are sequentially arranged on the bottom plate, a first perforation is arranged on the buffer layer, and a second perforation is arranged on the second metal layer at a position opposite to the first perforation; the first metal layer is for electrically connecting with the first electrode passing through the first and second through holes, and the second metal layer is for electrically connecting with the second electrode. According to the detection device, the first metal layer and the second metal layer are separated through the buffer layer, so that the detection device can be respectively contacted with two electrodes with different heights of the light-emitting elements, the light-emitting elements on the growth substrate are detected, bad points are found out, and the repair cost is reduced.
Description
Technical Field
The present invention relates to the field of chip detection technologies, and in particular, to a detection device and a detection method for a light emitting element.
Background
At present, the development of the electronic information industry is rapid, and the semiconductor display technology is continuously advanced, so that the display screen has higher resolution and better image quality. Compared with the prior light-emitting device, the novel light-emitting element has the advantages of small size, long service life, high brightness and the like.
However, since the size of the light emitting elements is small, the number of the light emitting elements on a single display screen is increased, so that the difficulty in detecting the light emitting elements is greater in the manufacturing process, and therefore, the display device is usually tested by inputting an electric signal after all the light emitting elements are mounted on a printed circuit board, if a defective point is detected, the problematic light emitting element needs to be removed, and a new light emitting element is mounted, so that the targeted repair is performed, the repair process is complex in operation, and the repair cost is high.
Accordingly, the prior art is still in need of improvement and development.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a detection device and a detection method for a light emitting element, which are aimed at solving the problem that the light emitting element cannot be detected in the early stage of manufacturing, resulting in high later repair cost.
The technical scheme of the invention is as follows:
The detection device is used for detecting a light-emitting element on a growth substrate, wherein a first electrode and a second electrode are arranged on the light-emitting element, the length of the first electrode is longer than that of the second electrode, the detection device comprises a bottom plate, and a first metal layer, a buffer layer and a second metal layer which are sequentially arranged on the bottom plate, a first perforation is arranged on the buffer layer, and a second perforation is arranged on the second metal layer at a position opposite to the first perforation; the first metal layer is for electrically connecting with the first electrode passing through the first and second through holes, and the second metal layer is for electrically connecting with the second electrode.
The detection device is characterized in that a third perforation is formed in the buffer layer, and a fourth perforation is formed in a position, opposite to the third perforation, of the second metal layer; the detection device further comprises a conductive filling layer, wherein the conductive filling layer is arranged in the third perforation and the fourth perforation, one end of the conductive filling layer is in contact with the first metal layer, and the other end of the conductive filling layer is flush with the second metal layer.
The detection device further comprises a first signal application pad, a second signal application pad and an insulating ring, wherein the first signal application pad is arranged on the second metal layer, the position of the first signal application pad is overlapped with the position of the conductive filling layer, and the first signal application pad is used for accessing an electric signal to the first metal layer through the conductive filling layer; the second signal applying pad is arranged on the second metal layer and is used for accessing an electric signal to the second metal layer; the insulating ring is disposed around a sidewall of the first signal applying pad.
The detection device is characterized in that the first signal application pad is a flexible cushion block; and/or, the second signal applying pad is a flexible cushion block.
The detection device is characterized in that the buffer layer is at least one of a silicon oxide layer or a silicon nitride layer.
The detection device comprises a conductive filling layer, a detection layer and a detection layer, wherein the conductive filling layer comprises one or more of an indium metal layer, a tin metal layer, a PEDOT polymer layer and a nano silver layer.
The detection device is characterized in that a plurality of light-emitting elements are arranged on the growth substrate in an array manner; the direction of the first electrode of the light-emitting element pointing to the second electrode in the odd vertical columns is a first direction; the direction in which the first electrodes of the light emitting elements are directed to the second electrodes in even columns is a second direction, and the first direction is opposite to the second direction.
The cross section of the first perforation and the second perforation are long-strip-shaped, and the sizes of the first perforation and the second perforation are equal; each first through hole is used for accommodating the first electrodes of the corresponding two adjacent columns of light-emitting elements; each second through hole is also used for accommodating the first electrodes of the corresponding two adjacent columns of the light-emitting elements.
The application also discloses a detection method of the light-emitting element, which adopts the detection device as described in any one of the above to detect the growth substrate, wherein the detection method comprises the following steps:
Aligning a first electrode of a light-emitting element on a growth substrate to be detected with the first perforation and the second perforation;
Pressing down the growth substrate to enable the first electrode to pass through the second through hole and the first through hole to be in contact with a first metal layer, and enabling the second electrode to be in contact with a second metal layer;
And applying an electric signal to the first metal layer and the second metal layer to obtain the position of the dead point of abnormal luminescence.
The method for detecting a light emitting element, wherein the step of applying an electrical signal to the first metal layer and the second metal layer to obtain a dead pixel position of abnormal light emission includes: and applying electric signals to the first metal layer and the second metal layer through the first signal applying pad and the second signal applying pad respectively, recording a luminous image on the growth substrate through a camera, and finding out the position of a dead point of abnormal luminescence.
Compared with the prior art, the embodiment of the invention has the following advantages:
When the detection device disclosed by the application is used, the light-emitting element on the growth substrate is directly detected, the existing light-emitting element adopts a flip-chip structure, so that the first electrode and the second electrode of the light-emitting element are arranged at the uppermost layer deviating from the growth substrate, the heights of the first electrode and the second electrode are different, the detection device is arranged opposite to the growth substrate, the first electrode and the second electrode of the light-emitting element face the detection device, the first electrode is longer, the first electrode can pass through the first perforation and the second perforation to be electrically connected with the first metal layer, and the second electrode is electrically connected with the second metal layer, so that an electric signal can be directly input to the light-emitting element, then the light-emitting condition of the light-emitting element is observed, the light-emitting element is detected, namely, the light-emitting element is directly removed after the dead spot is detected in the front stage of the display device, and the dead spot is found, so that the dead spot is prevented from being installed on the printed circuit board, the repair flow after the display device is finished is omitted, and the manufacturing cost is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings may be obtained according to the drawings without inventive effort to those skilled in the art.
FIG. 1 is a schematic diagram of a detecting device according to the present invention;
FIG. 2 is a cross-sectional view taken along AA' of FIG. 1;
FIG. 3 is a top view of the detection device of the present invention;
fig. 4 is an assembly view of a growth substrate and a light emitting element in the present invention;
FIG. 5 is a cross-sectional view taken along BB' in FIG. 4;
FIG. 6 is an assembly view of a detection device and a growth substrate according to the present invention;
fig. 7 is a flowchart of a method for detecting a light emitting element according to the present invention.
10, A bottom plate; 20. a first metal layer; 30. a buffer layer; 31. a first perforation; 40. a second metal layer; 41. a second perforation; 50. a conductive filler layer; 60. a first signal applying pad; 70. a second signal applying pad; 80. an insulating ring; 90. growing a substrate; 100. a light emitting element; 101. a first electrode; 102. and a second electrode.
Detailed Description
In order to make the present invention better understood by those skilled in the art, the following description will make clear and complete descriptions of the technical solutions of the embodiments of the present invention with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The continuous development of the LED display technology in the prior art ensures that the display device has better and better playing effect and can meet the increasingly severe watching demands of people. In the semiconductor industry, with continuous research of Light-emitting diodes (LEDs for short), new generation display technologies such as Mini LED display technology and Micro LED display technology have been widely used.
The Micro LED display technology has the advantages of high brightness, high response speed, low power consumption, long service life and the like, and becomes a research hot spot for people to pursue a new generation of display technology. Compared with the existing liquid crystal display, the display has higher photoelectric efficiency, higher brightness, higher contrast ratio and lower power consumption, and can also be combined with a flexible panel to realize flexible display.
Since Micro LEDs are usually LED chips with a size of less than 50um, the size of the metal pins is usually clamped at about 10um, so that the conventional electroluminescence test (Electroluminescent, abbreviated as EL test) equipment cannot be used in the detection field of Micro LEDs. Detection of Micro LEDs often relies on an optical detection scheme such as photoluminescence (Photoluminescence, PL for short). In view of the optical test mechanism of PL, as long as the multiple quantum wells (multiple quantum well, abbreviated as MQW) in the epitaxial structure are complete in function, a higher detection rate can be obtained, but the data has a larger deviation from the actual electrical detection result. In addition, the existing test is to perform electrical detection after the chip is mounted on the printed circuit board, so that once a defective pixel is found, namely, an abnormally luminous chip is required to be repaired, an invalid chip is detached, a new chip is replaced, detection is performed again, and the whole repair and detection process is long in time consumption and high in cost.
It should be noted that the light emitting element 100 according to the embodiment of the present application includes, but is not limited to, one or more of an LED chip, a Mini LED chip, and a Micro LED chip.
Referring to fig. 1 and 5, in an embodiment of the present application, a detection device is disclosed for detecting a light emitting element 100 on a growth substrate 90, where a first electrode 101 and a second electrode 102 are disposed on the light emitting element 100, and a length of the first electrode 101 is greater than a length of the second electrode 102, where the detection device includes a base plate 10, and a first metal layer 20, a buffer layer 30, and a second metal layer 40 sequentially disposed on the base plate 10, where a first through hole 31 is disposed on the buffer layer 30, and a second through hole 41 is disposed on a position on the second metal layer 40 opposite to the first through hole 31; the first metal layer 20 is used for electrically connecting with the first electrode 101 passing through the first through hole 31 and the second through hole 41, and the second metal layer 40 is used for electrically connecting with the second electrode 102.
When the detection device disclosed by the application is used, the light-emitting element 100 on the growth substrate 90 is directly detected, the existing light-emitting element 100 adopts a flip-chip structure, so that the first electrode 101 and the second electrode 102 of the light-emitting element 100 are arranged at the uppermost layer deviating from the growth substrate 90, the heights of the first electrode 101 and the second electrode 102 are different, the detection device is arranged opposite to the growth substrate 90, the first electrode 101 and the second electrode 102 of the light-emitting element 100 face the detection device, the first electrode 101 is longer, the first electrode 101 can pass through the first through hole 31 and the second through hole 41 to be electrically connected with the first metal layer 20, and the second electrode 102 is electrically connected with the second metal layer 40, so that an electric signal can be directly input to the light-emitting element 100, then the light-emitting condition of the light-emitting element 100 is observed, the detection is carried out, namely, the light-emitting element 100 is detected at the front stage of the display device is manufactured, and then the bad spots are directly removed by laser, so that the bad spots are avoided, the light-emitting element 100 is mounted on a circuit board, the display device is saved, and the manufacturing cost is reduced after the display device is manufactured.
Specifically, as another implementation manner of this embodiment, it is disclosed that the buffer layer 30 is at least one of a silicon oxide layer or a silicon nitride layer. Silicon oxide and silicon nitride are both insulating materials, so that shorting can be prevented when disposed between the first metal layer 20 and the second metal layer 40, protecting circuitry and structures on the detection device; and silicon oxide and silicon nitride are very often used in the semiconductor field, are easy to purchase and have low manufacturing cost.
As shown in fig. 2, as an implementation manner of this embodiment, it is disclosed that a third through hole (not shown in the drawing) is provided on the buffer layer 30, and a fourth through hole (not shown in the drawing) is provided on the second metal layer 40 at a position opposite to the third through hole; the detection device further comprises a conductive filling layer 50, wherein the conductive filling layer 50 is arranged in the third through hole and the fourth through hole, one end of the conductive filling layer 50 is in contact with the first metal layer 20, and the other end of the conductive filling layer is flush with the second metal layer 40. Since the first metal layer 20 of the detection device disclosed in this embodiment is sandwiched between the bottom plate 10 and the buffer layer 30, it is inconvenient to connect an external electrical signal from the front, and the first metal layer 20 is not too thick to prevent the metal resistance from affecting the power of the detection circuit, so it is also inconvenient to connect an electrical signal from the side of the first metal layer 20, and the third through hole and the fourth through hole are provided to expose a part of the other front of the first metal layer 20, and the conductive filling layer 50 may be provided, where the conductive filling layer 50 includes one or more of an indium metal layer, a tin metal layer, a PEDOT polymer layer, and a nano silver layer. That is, the conductive filling layer 50 can conduct electrical signals to play a role of a bridge, and when an external electrical signal contacts one end of the conductive filling layer 50, which is far away from the first metal layer 20, the electrical signal can be transmitted to the first metal layer 20, so that the electrical signal is stably transmitted, and the detection process is conveniently and smoothly carried out.
Specifically, as an implementation manner of this embodiment, it is disclosed that the third through hole is located at an edge position of the buffer layer 30, and a projection of the third through hole on the growth substrate 90 avoids a region where the light emitting element 100 is disposed. The position of the third through hole determines the position of the conductive filling layer 50, that is, the position where the external connection wire is connected with the first metal layer 20, so that the external connection wire is more convenient to set in the edge area of the detection device, and the external connection wire cannot extend to the middle area of the second metal layer 40, so that the external connection wire can be prevented from shielding the first through hole 31 or the second through hole 41, the obstruction of the electrode of the light-emitting element 100 is prevented, and the adverse effect on the detection result is reduced.
As shown in fig. 1,2 and 3, as another implementation manner of the present embodiment, it is disclosed that the detection device further includes a first signal applying pad 60, a second signal applying pad 70 and an insulating ring 80, the first signal applying pad 60 is disposed on the second metal layer 40, a position of the first signal applying pad 60 overlaps a position of the conductive filling layer 50, and the first signal applying pad 60 is used to access an electrical signal to the first metal layer 20 through the conductive filling layer 50; the second signal applying pad 70 is disposed on the second metal layer 40, and is used for accessing an electrical signal to the second metal layer 40; the insulating ring 80 is disposed around the sidewall of the first signal applying pad 60. Because the surface of the conductive filling layer 50 is smooth, and one end of the conductive filling layer 50 facing away from the first metal layer 20 is flush with the surface of the second metal layer 40, the external wire is easy to slide when connected, if the external wire slides onto the second metal layer 40 to easily cause short circuit, the risk of damaging the detection device exists, and the first signal applying pad 60 is arranged to protrude out of the surface of the conductive filling layer 50, so that the external wire is in contact with the first signal applying pad 60 and not in direct contact with the conductive filling layer 50, damage to the conductive filling layer 50 and the second metal layer 40 is avoided, and the connection stability can be better ensured; in addition, the insulating ring 80 can separate the second metal layer 40 from the side wall of the first signal applying pad 60, so that the condition of breakdown short circuit caused by too small distance between the second metal layer and the side wall in the power-on process is prevented, and a circuit on the detection device is protected from danger; the second signal applying pad 70 is disposed to protrude from the second metal layer 40, so that the external wire will not directly touch the second metal layer 40, thereby protecting the integrity of the surface of the second metal layer 40; and set up simultaneously that first signal applys pad 60 and second signal applys pad 70 also have the effect of location, when the external electrical number of input, through two structures of direct observation upper ledge on second metal layer 40, can accomplish the wire fast and first metal layer 20 and second metal layer 40's intercommunication, the wire is connected first metal layer 20 and second metal layer 40's position and is kept unchanged, can make the resistance of detection device self unchanged in every testing process, reduces detection device's influence to the testing process.
Specifically, as another implementation manner of the present embodiment, the first signal applying pad 60 is disclosed as a flexible pad block; and/or the second signal applying pad 70 is a flexible pad. Because the external leads are in direct contact with the first signal applying pad 60 or the second signal applying pad 70, abrasion is unavoidable during the contact process, and the surface of the flexible cushion block has a buffer function when the flexible cushion block is in contact with the external leads, so that abrasion can be reduced; meanwhile, if the surface of the flexible cushion block is concave, the external lead can be better surrounded, so that the external lead is in closer contact with the first signal applying pad 60 or the second signal applying pad 70, and the transmission of the electric signal is more stable.
Referring to fig. 4 and 5, as another implementation manner of the present embodiment, a plurality of the light emitting elements 100 are disclosed as being arrayed on the growth substrate 90; the direction in which the first electrodes 101 of the light emitting elements 100 are directed to the second electrodes 102 in odd columns is a first direction (a 1 direction in fig. 5); the direction in which the first electrodes 101 of the light emitting elements 100 are directed to the second electrodes 102 in even columns is a second direction (a 2 direction in fig. 5), and the first direction is opposite to the second direction. When a plurality of light emitting elements 100 are distributed on the growth substrate 90 in an array manner, the distances between two adjacent light emitting elements 100 are equal, and the first through holes 31 and the second through holes 41 are correspondingly arranged and are used for accommodating part of electrodes, so that in the detection process, the buffer layer 30 is separated between the two adjacent light emitting elements 100, and longer electrodes between the two light emitting elements 100 cannot affect each other, so that short circuits or other circuit faults in the detection process are avoided. In addition, since the first metal layer 20 and the second metal layer 40 of the inspection device disclosed in this embodiment are both sheet-shaped plates, a plurality of contact positions can be set to inspect a plurality of light emitting elements 100 at the same time, and the light emitting elements 100 on one or more growth substrates 90 can be inspected at a time, which is advantageous for improving the inspection efficiency.
As another implementation manner of the present embodiment, as shown in fig. 4,5 and 6, it is disclosed that the cross-sectional shapes of the first through hole 31 and the second through hole 41 are elongated, and the sizes of the first through hole 31 and the second through hole 41 are equal; each first through hole 31 is configured to accommodate the first electrodes 101 of the corresponding two adjacent columns of the light emitting elements 100; each second through hole 41 is also used for accommodating the first electrodes 101 of the corresponding two adjacent columns of the light emitting elements 100. The light emitting element 100 on the conventional display device is often designed with the same height as the PN electrode, which is not beneficial to the electrical detection of the subsequent chip; therefore, as shown in fig. 5, a first semiconductor layer is formed on the growth substrate 90 in this embodiment through a chip process, then a light emitting layer and a second semiconductor layer are sequentially formed on the first semiconductor layer, finally a second electrode 102 is formed on a side of the first semiconductor layer facing away from the growth substrate 90, a first electrode 101 is formed on a side of the second semiconductor layer facing away from the growth substrate 90, a top end of the first electrode 101 is farthest from the growth substrate 90, a height difference exists between the first electrode 101 and the second electrode 102 to match the detection device, the first electrode 101 is inserted into the first through hole 31 to contact with the first metal layer 20 during detection, and the second electrode 102 contacts with the second metal layer 40; after the plurality of light emitting elements 100 are arranged in an array, the light emitting elements 100 are orderly arranged, and the arrangement scheme that the direction of the first electrode 101 of the light emitting element 100 pointing to the second electrode 102 in the odd vertical row is opposite to the direction of the first electrode 101 of the light emitting element 100 pointing to the second electrode 102 in the even vertical row is adopted, so that the light emitting element 100 matrix on the whole growth substrate 90 forms a regular arrangement with uneven surface, and the plurality of first perforations 31 and the plurality of second perforations 41 are arranged side by side on the detection device, so that the whole array of light emitting elements 100 can be inserted into the first perforations 31 in a row unit to be in contact with the first metal layer 20, thereby saving the alignment time before detection, simplifying the structure of the detection device, reducing the number of the first perforations 31 and the second perforations 41, and facilitating manufacture.
Referring to fig. 7, as another embodiment of the present application, a method for inspecting a light emitting element 100 is disclosed, wherein the inspecting apparatus for inspecting a growth substrate 90 includes:
S100, aligning a first electrode 101 of a light-emitting element 100 on a growth substrate 90 to be detected with the first through hole 31 and the second through hole 41;
s200, pressing down the growth substrate 90 to make the first electrode 101 pass through the second through hole 41 and the first through hole 31 to contact the first metal layer 20, and make the second electrode 102 contact the second metal layer 40;
and S300, applying an electric signal to the first metal layer 20 and the second metal layer 40 to obtain a dead pixel position of abnormal light emission.
Specifically, as an implementation manner of this embodiment, it is disclosed that the step S300 specifically includes:
And applying electric signals to the first metal layer 20 and the second metal layer 40 through the first signal applying pad and the second signal applying pad respectively, recording a luminous pattern on the growth substrate 90 through a camera, and finding out the position of a dead point of abnormal luminescence. The light-emitting condition of the growth substrate 90 is recorded by the camera, and the growth substrate can be repeatedly played, and the analysis and the observation record can be clearly performed; in addition, the spectrometer is an instrument with a camera and can record, and is also called a spectrometer, and is widely known as a direct-reading spectrometer. And the light detectors such as photomultiplier are used for measuring the intensities of different wavelength positions of spectral lines. It consists of an entrance slit, a dispersion system, an imaging system and one or more exit slits. The electromagnetic radiation of the radiation source is separated by a dispersive element into the desired wavelength or wavelength region and intensity measurements are made at selected wavelengths (or scanning a band of wavelengths). Compared with human eyes, the spectrometer can more accurately find the dead spot on the growth substrate 90, and can convert the captured light intensity of the light emitting element 100 into visual data for quantitatively analyzing the working state of the light emitting element 100.
In summary, the present application discloses a detection device for detecting a light emitting element 100 on a growth substrate 90, wherein a first electrode 101 and a second electrode 102 are disposed on the light emitting element 100, and the length of the first electrode 101 is greater than that of the second electrode 102, wherein the detection device comprises a bottom plate 10, and a first metal layer 20, a buffer layer 30 and a second metal layer 40 sequentially disposed on the bottom plate 10, a first through hole 31 is disposed on the buffer layer 30, and a second through hole 41 is disposed on the second metal layer 40 opposite to the first through hole 31; the first metal layer 20 is used for electrically connecting with the first electrode 101 passing through the first through hole 31 and the second through hole 41, and the second metal layer 40 is used for electrically connecting with the second electrode 102. When the detection device disclosed by the application is used, the light-emitting element 100 on the growth substrate 90 is directly detected, and the existing light-emitting element 100 adopts a flip-chip structure, so that the first electrode 101 and the second electrode 102 of the light-emitting element 100 are arranged at the uppermost layer away from the growth substrate 90, the heights of the first electrode 101 and the second electrode 102 are different, the detection device is arranged opposite to the growth substrate 90, the first electrode 101 and the second electrode 102 of the light-emitting element 100 face the detection device, the first electrode 101 passes through the first through hole 31 and the second through hole 41 to be electrically connected with the first metal layer 20, and the second electrode 102 passes through the second through hole 41 to be electrically connected with the second metal layer 40, so that an electric signal can be directly input to the light-emitting element 100, then the light-emitting condition of the light-emitting element 100 is observed, the light-emitting element 100 is detected, namely, the light-emitting element 100 is detected at the front stage of the display device is manufactured, and the bad spots are directly removed by laser after the bad spots are found, so that the invalid light-emitting element 100 is prevented from being mounted on the printed circuit board, the repair process after the display device is completed is omitted, and the manufacturing cost is reduced.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
It is to be understood that the invention is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (10)
1. The detection device is used for detecting a light-emitting element on a growth substrate, a first electrode and a second electrode are arranged on the light-emitting element, and the length of the first electrode is longer than that of the second electrode, and is characterized by comprising a bottom plate, a first metal layer, a buffer layer and a second metal layer which are sequentially arranged on the bottom plate, wherein a first perforation is arranged on the buffer layer, and a second perforation is arranged on the second metal layer at a position opposite to the first perforation; the first metal layer is for electrically connecting with the first electrode passing through the first and second through holes, and the second metal layer is for electrically connecting with the second electrode.
2. The detecting device according to claim 1, wherein a third through hole is provided in the buffer layer, and a fourth through hole is provided in the second metal layer at a position opposite to the third through hole; the detection device further comprises a conductive filling layer, wherein the conductive filling layer is arranged in the third perforation and the fourth perforation, one end of the conductive filling layer is in contact with the first metal layer, and the other end of the conductive filling layer is flush with the second metal layer.
3. The detection apparatus according to claim 2, characterized in that the detection apparatus further comprises:
The first signal application pad is arranged on the second metal layer, the position of the first signal application pad is overlapped with the position of the conductive filling layer, and the first signal application pad is used for accessing an electric signal to the first metal layer through the conductive filling layer;
a second signal applying pad, disposed on the second metal layer, for accessing an electrical signal to the second metal layer; and
An insulating ring disposed around a sidewall of the first signal applying pad.
4. A test device according to claim 3, wherein the first signal application pad is a flexible pad; and/or, the second signal applying pad is a flexible cushion block.
5. The apparatus according to any one of claims 1 to 4, further comprising a light detection unit for detecting light emission of the light emitting element on the growth substrate.
6. The device of claim 2, wherein the conductive filler layer comprises one or more of an indium metal layer, a tin metal layer, a PEDOT polymer layer, and a nano silver layer.
7. The detection device according to claim 1, wherein a plurality of the light-emitting elements are arrayed on the growth substrate;
Wherein the direction of the first electrode of the light-emitting element pointing to the second electrode in the odd vertical columns is a first direction; the direction in which the first electrodes of the light emitting elements are directed to the second electrodes in even columns is a second direction, and the first direction is opposite to the second direction.
8. The device of claim 7, wherein the first and second perforations are elongated in cross-sectional shape, the first and second perforations being of equal size;
each first through hole is used for accommodating the first electrodes of the corresponding two adjacent columns of light-emitting elements; each second through hole is also used for accommodating the first electrodes of the corresponding two adjacent columns of the light-emitting elements.
9. A method for inspecting a light-emitting element, using the inspection device according to any one of claims 1 to 8, characterized by comprising:
Aligning a first electrode of a light-emitting element on a growth substrate to be detected with the first perforation and the second perforation;
Pressing down the growth substrate to enable the first electrode to pass through the second through hole and the first through hole to be in contact with a first metal layer, and enabling the second electrode to be in contact with a second metal layer;
And applying an electric signal to the first metal layer and the second metal layer to obtain the position of the dead point of abnormal luminescence.
10. The method according to claim 9, wherein the step of obtaining the position of the defective pixel of the abnormal light emission includes: the light-emitting condition of the light-emitting element on the growth substrate is detected by the light detection unit to find out the position of the dead point of abnormal light emission.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110776301.3A CN115602661B (en) | 2021-07-08 | 2021-07-08 | Detection device and detection method of light-emitting element |
| PCT/CN2022/097827 WO2023279911A1 (en) | 2021-07-08 | 2022-06-09 | Chip detection device, detection method, and chip component |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110776301.3A CN115602661B (en) | 2021-07-08 | 2021-07-08 | Detection device and detection method of light-emitting element |
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| CN115602661B true CN115602661B (en) | 2024-05-17 |
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| EP1959506A2 (en) * | 1997-01-31 | 2008-08-20 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a semiconductor light-emitting device |
| US10761146B2 (en) * | 2017-05-29 | 2020-09-01 | Samsung Electronics Co., Ltd. | Wafer probe card for evaluating micro light emitting diodes, analysis apparatus including the same, and method of fabricating the wafer probe card |
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| CN102655197A (en) * | 2011-03-01 | 2012-09-05 | 索尼公司 | Light emitting unit and display device |
| CN107681034A (en) * | 2017-08-30 | 2018-02-09 | 天津三安光电有限公司 | It is micro-led and preparation method thereof |
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| CN115602661A (en) | 2023-01-13 |
| WO2023279911A1 (en) | 2023-01-12 |
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