CN115585902A - Detection circuit array and detection device - Google Patents
Detection circuit array and detection device Download PDFInfo
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- CN115585902A CN115585902A CN202211185387.3A CN202211185387A CN115585902A CN 115585902 A CN115585902 A CN 115585902A CN 202211185387 A CN202211185387 A CN 202211185387A CN 115585902 A CN115585902 A CN 115585902A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
Abstract
The invention discloses a detection circuit array and a detection device. The detection circuit array comprises a plurality of detection lines and a plurality of detection units arranged in an array; the detection unit comprises a detection module and a first conversion module; the detection modules of at least part of the detection units in the same row are sequentially connected in series; in each detection module connected in series, the input end of the first detection module receives a scanning signal, and the input ends of other detection modules except the first detection module and the output end point of the previous detection module are connected to a detection node; in the same detection unit, the input end of the first conversion module and the output end of the detection module are electrically connected with the detection node; the output ends of the first conversion modules of at least part of the detection units positioned in the same column are electrically connected with the same detection line. By adopting the technical scheme, the detection difficulty of large-scale and large-batch sites is reduced, and the precision and the accuracy of a detection result are improved.
Description
Technical Field
The present invention relates to the field of circuit technologies, and in particular, to a detection circuit array and a detection apparatus.
Background
In some sensor array or battery array applications, it is desirable to monitor the temperature at different locations. Temperature measuring resistors sensitive to temperature are usually arranged at various positions of the panel, and the temperature at the position of the temperature measuring resistor is obtained according to the temperature characteristic curve of the temperature measuring resistor and the measured resistance value.
However, the temperature measuring resistors are mainly formed by metal wiring resistors, and each temperature measuring resistor needs to be tested independently, so that the temperature detection of different point locations in large scale and large batch is difficult to realize.
Disclosure of Invention
The invention provides a detection circuit array and a detection device, which aim to solve the problem of large-scale and large-batch detection of temperature measuring resistors.
According to an aspect of the present invention, there is provided a detection circuit array comprising: a plurality of detection lines and a plurality of detection units arranged in an array; the detection unit comprises a detection module and a first conversion module;
the detection modules of at least part of the detection units in the same row are sequentially connected in series; the output ends of the detection modules connected in series are respectively electrically connected with different detection nodes; in each detection module connected in series, the input end of the first detection module receives a scanning signal, and the input ends of the other detection modules except the first detection module and the output end point of the previous detection module are connected to the detection node;
in the same detection unit, the input end of the first conversion module and the output end of the detection module are electrically connected to the detection node; the output ends of the first conversion modules of at least part of the detection units in the same column are electrically connected with the same detection line; the first conversion module is used for outputting a detection signal to the detection line according to the potential of the detection node.
According to another aspect of the present invention, there is provided a detection apparatus comprising: the detection circuit array is provided.
According to the technical scheme, the detection modules of at least part of the detection units in the same row are sequentially connected in series, so that the first conversion module in the detection unit can acquire the potential at each detection node between the detection modules and convert the potential into a detection signal; whether current flows into the detection modules connected in series or not can be controlled through scanning signals, the potential of each detection node between the detection modules connected in series can be obtained through the detection signals in the detection lines, the potential of each detection node in the whole detection circuit array can be obtained through a small number of scanning lines and the detection lines, and then the impedance of the detection module of the detection unit at each position in the whole detection circuit array is determined, so that the detection information at each position of the whole detection circuit array can be determined, and the detection difficulty of large-scale and large-batch sites is reduced; the electric signal at the detection node is converted into the detection signal through the first detection module, the electric signal at the detection node can be prevented from being influenced by the wiring resistance in the transmission process to change, the obtained electric signal at the detection node is accurate, the impedance of the obtained detection module is accurate, and the precision and the accuracy of the detection result are improved.
It should be understood that the statements in this section do not necessarily identify key or critical features of the embodiments of the present invention, nor do they necessarily limit the scope of the invention. Other features of the present invention will become apparent from the following description.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art detection circuit array;
fig. 2 is a schematic structural diagram of a detection circuit array according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a detection unit according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention;
FIG. 10 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention;
FIG. 11 is a schematic structural diagram of a thermistor according to an embodiment of the present invention;
FIG. 12 is a schematic structural diagram of a light sensor according to an embodiment of the present invention;
FIG. 13 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention;
fig. 14 is a schematic structural diagram of a detection apparatus according to an embodiment of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic structural diagram of a detection circuit array in the prior art. Referring to fig. 1, the detection circuit array 01 includes temperature measuring resistors 02 arranged in an array, detection lines 03 are connected to two ends of the temperature measuring resistors 02, a resistance value of the temperature measuring resistors 02 can be obtained through electric signals at two ends of the detection lines 03 and the temperature of the position where the temperature measuring resistors 02 are located can be obtained according to a characteristic curve and the resistance value of the temperature measuring resistors 02.
As described in the background art, the temperature measuring resistors 02 are formed by metal wires, each temperature measuring resistor 02 is independently tested through the detecting lines 03, and as the number of the temperature measuring resistors 02 increases, the number of the detecting lines 03 also increases in batches. For large-scale and large-batch temperature measuring resistors 02, the number of detection lines 03 is large, and the detection is difficult to realize; and for the longer detection line 03, the resistance value of the detection line also influences the acquired resistance value of the temperature measuring resistor 02. Therefore, it is difficult to perform large-scale, large-scale temperature detection of different sites.
To solve the above technical problem, an embodiment of the present invention provides a detection circuit array, including: a plurality of detection lines and a plurality of detection units arranged in an array; the detection unit comprises a detection module and a first conversion module; the detection modules of at least part of the detection units in the same row are sequentially connected in series; the output ends of the detection modules connected in series are respectively electrically connected with different detection nodes; in each detection module connected in series, the input end of the first detection module receives a scanning signal, and the input ends of other detection modules except the first detection module and the output end point of the previous detection module are connected to a detection node; in the same detection unit, the input end of the first conversion module and the output end of the detection module are electrically connected with the detection node; the output ends of the first conversion modules of at least part of the detection units positioned in the same column are electrically connected with the same detection line; the first conversion module is used for outputting a detection signal to a detection line according to the potential of the detection node.
By adopting the technical scheme, the detection modules of at least part of the detection units in the same row are sequentially connected in series, so that the first conversion module in the detection unit can acquire the potential at each detection node between the detection modules and convert the potential into a detection signal; whether current flows into the detection modules connected in series can be controlled through scanning signals, the potential of each detection node between the detection modules connected in series can be obtained through the detection signals in the detection lines, the potential of each detection node in the whole detection circuit array can be obtained through a small number of scanning lines and the detection lines, and then the impedance of the detection modules of the detection units at each position in the whole detection circuit array is determined, so that detection information at each position of the whole detection circuit array can be determined, and the detection difficulty of large-scale and large-batch sites is reduced; the electric signal at the detection node is converted into the detection signal through the first detection module, the electric signal at the detection node can be prevented from being influenced by the wiring resistance in the transmission process to change, the obtained electric signal at the detection node is accurate, the impedance of the obtained detection module is accurate, and the precision and the accuracy of the detection result are improved.
The above is the core idea of the present invention, and based on the embodiments of the present invention, a person skilled in the art can obtain all other embodiments without creative efforts, which belong to the protection scope of the present invention. The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Fig. 2 is a schematic structural diagram of a detection circuit array according to an embodiment of the present invention. Referring to fig. 2, the sensing circuit array 10 includes a plurality of sensing lines 11 and a plurality of sensing cells 20 arranged in an array; the detection unit 20 comprises a detection module 21 and a first conversion module 22. The detection modules 21 of at least some of the detection units 20 in the same row are sequentially connected in series; the output ends of the detection modules 21 connected in series are respectively and electrically connected with different detection nodes N; in the serially connected detection modules 21, the input end of the first detection module 21 receives the scan signal, and the input ends of the other detection modules 21 except the first detection module 21 and the output end of the previous detection module 21 are connected to the detection node N. In the same detection unit 20, the input end of the first conversion module 22 and the output end of the detection module 20 are electrically connected to the detection node N; the output terminals of the first conversion modules 22 of at least some of the detection units 20 in the same column are electrically connected to the same detection line 11; the first conversion module 21 is configured to output a detection signal to the detection line 11 according to the potential of the detection node N.
The detection module 21 in the detection unit 20 may be configured to detect a temperature at a position thereof, but is not limited thereto, for example, the detection module 21 may also be configured to detect a light intensity, a pressure, and the like at the position thereof, which is not specifically limited in this embodiment of the present invention.
Specifically, in each of the detection modules 21 connected in series, after the input end of the first detection module 21 receives the scanning signal, a current flows through each of the detection modules 21 connected in series, and there is a potential difference across the detection modules 21, so that different electrical signals exist at different detection nodes N, and the impedance in each of the detection modules 21 can be determined according to the potential at each of the detection nodes N and the current signal flowing through each of the detection modules 21, and when the impedance of each of the detection modules 21 changes with the change of the temperature, the light intensity, or the pressure at the position where the detection module 21 is located, the information of the temperature, the light intensity, or the pressure at the position where the detection unit 20 is located can be determined according to the impedance of each of the detection modules 21. The scanning signal may be provided by a Gate drive on Array (GOA) circuit on the Array substrate, the GOA circuit may sequentially provide the scanning signal to each row of the detection modules 21, so that only a certain row of the detection modules 21 connected in series flows through each time, that is, only each detection node N in the row has an electrical signal, each detection line 11 may respectively obtain the electrical signal at each detection node N between the detection modules 21 in the row, the first conversion module 22 may convert the electrical signal at the detection node N electrically connected thereto into a current signal to transmit to the detection line 11, and thus, the electrical signal at each detection node N is prevented from being changed due to the influence of the wire resistance in the transmission process of the detection line 11; the electrical signal at each detection node N in the row can be determined from the current signal transmitted in the detection line 11, and thus the impedance in each detection module 21 in the row can be determined; after the detection of the electrical signals at the detection nodes N in the row is completed, the GOA circuit then stops providing the scanning signals to the detection modules 21 in the row, and provides the scanning signals to the detection modules 21 in the next row, so as to be able to detect the electrical signals at the detection nodes N in the next row, determine the impedance in the detection modules 21 in the next row, and so on, may respectively determine the impedance of the detection modules 21 of the detection units 20 at the positions in the detection circuit array 10, so that the information such as the temperature, the light intensity, or the pressure at the positions in the detection circuit array 10 may be determined.
It should be noted that the first conversion module is not limited to convert the voltage signal into the current signal, and in an alternative embodiment, when the detection module includes a detection capacitor, the first conversion module may also convert the capacitance signal into the voltage signal or the current signal, or when the detection module includes a detection inductor, the first conversion module may also convert the inductance signal into the voltage signal or the current signal, and the like, which is not specifically limited in this embodiment of the present invention.
According to the embodiment of the invention, the detection modules of at least part of the detection units in the same row are sequentially connected in series, so that the first conversion module in the detection unit can acquire the potential at each detection node between the detection modules and convert the potential into a detection signal; whether current flows into the detection modules connected in series can be controlled through scanning signals, the potential of each detection node between the detection modules connected in series can be obtained through the detection signals in the detection lines, the potential of each detection node in the whole detection circuit array can be obtained through a small number of scanning lines and the detection lines, and then the impedance of the detection modules of the detection units at each position in the whole detection circuit array is determined, so that detection information at each position of the whole detection circuit array can be determined, and the detection difficulty of large-scale and large-batch sites is reduced; the electric signal at the detection node is converted into the detection signal through the first detection module, the electric signal at the detection node can be prevented from being influenced by the wiring resistance in the transmission process to change, the obtained electric signal at the detection node is accurate, the impedance of the obtained detection module is accurate, and the precision and the accuracy of the detection result are improved.
Optionally, fig. 3 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention. Referring to fig. 3, the detection circuit array 10 further includes a plurality of scan lines 12; the detection modules 21 which are positioned in the same row and connected in series are electrically connected through the scanning line 12; the detection module 21 includes a detection resistor R1; the detection resistor R1 is disposed on the same layer as the scanning line 12.
Specifically, a plurality of scanning lines 12 may be respectively electrically connected to the scanning terminals SCAN of a plurality of GOA sub-units 51 in the GOA circuit, the scanning terminals SCAN may sequentially output scanning signals having a fixed potential, one scanning line 12 may be electrically connected to the detection resistors R1 of the detection modules 21 in the same row, one detection line 11 may be electrically connected to the first conversion modules 22 in the same column, and detection of large-scale sites may be achieved by the scanning lines 12 having the same number of rows as the detection units 20 and the detection lines 11 having the same number of columns as the detection units 20; the number of wires is reduced, which is beneficial to the lightness and thinness of the detection circuit array 10; the detection resistor R1 and the scanning line 12 can be arranged on the same layer, so that the wiring space is further reduced; at this time, the detection resistor R1 may be a winding structure such as a pulse-shaped structure or a saw-toothed structure, so as to increase the resistance of the detection resistor R1, reduce the influence of the routing resistor, and improve the detection precision and accuracy.
Optionally, fig. 4 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention. Referring to fig. 4, the detection circuit array 10 further includes a plurality of voltage dividing modules 31, and the output terminal of the last detection module 21 in the series-connected detection modules 21 and a voltage dividing module 231 are electrically connected to the detection node N. The impedance of the voltage dividing module 31 is a fixed value.
For example, with continued reference to fig. 4, the voltage dividing module 31 includes a voltage dividing resistor R0, and for example, a row of detecting resistors R1 includes a first detecting resistor R11, a second detecting resistor R12, and a third detecting resistor R13. The voltage at the input end of the first detection resistor R11 is the voltage of the SCAN end SCAN and is V0; the voltage of a first detection node N1 between the first detection resistor R11 and the second detection resistor R12 is V1, and the voltage V1 of the first detection node N1 can be obtained by enabling a first conversion module 22 electrically connected with the first detection node N1 to output a detection signal to the detection line 11; accordingly, the voltage V2 of the second detection node N2 between the second detection resistor R12 and the third detection resistor R13 can be determined in the same manner; a voltage V3 of a third detection node N3 between the third detection resistor R13 and the voltage dividing resistor R0; the voltage at the output terminal of the voltage dividing resistor R0 is grounded, and the voltage can be regarded as 0V. The detection resistors R11, R12 and R13 are all connected with the divider resistor R0 in series and are derived to obtain
According to this can confirm each detection resistance R1's of series connection resistance respectively, and adopt this kind of mode, when the quantity of the detection resistance R1 of series connection was a plurality of, also can confirm the resistance of the detection resistance R1 of different positions department respectively. Therefore, by arranging the voltage dividing module 31, the impedance of the detection module 21 can be obtained by the impedance of the voltage dividing module 31 and the voltage at the detection node N, the current value of the path where the detection module 21 is located is not needed, so that the accuracy of the current value in the path where the detection module 21 is located is prevented from being influenced by the trace resistance of the path where the detection module 21 is located, and the precision and accuracy of the detection result can be improved.
In an alternative embodiment, the resistance of the voltage dividing resistor R0 is greater than the resistance of the detecting resistor R1. The resistance value of the divider resistor R0 is large, so that the voltage at all the detection nodes N is large, the voltage and the voltage change at the detection nodes N can be conveniently detected, and the detection sensitivity and accuracy are improved.
Optionally, fig. 5 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention. Referring to fig. 5, the first conversion module 22 includes a first transistor T1 and a second transistor T2; the grid electrode of the first transistor T1 and the grid electrode of the second transistor T2 are both electrically connected with the detection node N; the first pole of the first transistor T1 and the first pole of the second transistor T2 are both coupled to the first level terminal GND; a second pole of the first transistor T1 is electrically connected to the sensing node N, and a second pole of the second transistor T2 is electrically connected to the sensing line 11.
Specifically, the first transistor T1 and the second transistor T2 are both N-type MOS transistors for example. The first transistor T1 and the second transistor T2 are made of the same material and are manufactured by the same process, the mobility mu, the dielectric constant Cox, the channel width-to-length ratio W/L, the threshold voltage Vth and the like in the first transistor T1 and the second transistor T2 are the same, and the first transistor T1 and the second transistor T2 form a current mirror circuit with equal proportion. When current flows through the detection resistor R1, the detection node N has partial voltage, so that the first transistor T1 and the second transistor T2 are both in a saturated conduction state; a current flows through the first transistor T1 so that the same current flows in the second transistor T2; the second pole of the second transistor T2 is electrically connected to the detection line 11 as the detection end, so that the detection line 11 acquires a current signal flowing through the second transistor T2, and thus the current flowing through the first transistor T1 can be determined, the potential of the detection node N can be determined, the voltage division amount of the detection module 21 can be known according to the potential of the detection node N, and the impedance of the detection module 21 can be further determined according to the voltage division amount.
Illustratively, the gate voltage of the first transistor T1 and the gate voltage of the second transistor T2 are both the voltage Vn at the detection node N, the current in the first transistor T1
Current in the second transistor T2
I 1 ＝I 2 The second transistor T2 may replicate the first transistorCurrent I in transistor T1 1 The current I in the second transistor T2 of each detection unit 20 in the same row is obtained through each detection line 11 2 That is, the current I in the first transistor T1 of each detecting unit 20 in the same row can be obtained 1 Then by the current I 1 The formula of (c) can obtain the voltage Vn at each sensing node N and the resistance value of the sensing resistor R1 in each sensing unit 20 in the same row.
It can be understood that the impedances of the first transistor T1 and the second transistor T2 can reach megaohms, which are much larger than the impedance of the detection module 21, and the current in the first transistor T1 and the electricity in the second transistor T2 have little influence on the voltage Vn at the detection point N; the voltage Vn at the detection point N acquired by the first transistor T1 and the second transistor T2 is not affected by factors such as the wiring resistance, and the impedance of the detection module 21 is not affected, which is beneficial to improving the accuracy of the detection result.
In an alternative embodiment, the channel width-to-length ratio W2/L2 of the second transistor T2 is greater than the channel width-to-length ratio W1/L1 of the first transistor T1. Illustratively, the second transistor T2 and the first transistor T1 are identical except for the channel width and length, and the current I in the second transistor T2 2 Is larger than the current I in the first transistor T1 1 The current I in the first transistor T1 can be controlled by the second transistor T2 1 The amplification is carried out with the magnification of (W2/L2)/(W1/L1), so that the detection sensitivity can be improved.
Optionally, fig. 6 is a schematic structural diagram of a detection unit according to an embodiment of the present invention. Referring to fig. 6, the first conversion module 22 further includes a third transistor T3 electrically connected between the first pole of the first transistor T1 and the first level terminal GND, and a fourth transistor T4 electrically connected between the first pole of the second transistor T2 and the first level terminal GND. A first pole of the first transistor T1 is electrically connected to a second pole of the third transistor T3, and a first pole of the third transistor T3 is electrically connected to the first level terminal GND; a first pole of the second transistor T2 is electrically connected to a second pole of the fourth transistor T4, and a first pole of the fourth transistor T4 is electrically connected to the first level terminal GND; the gate electrode of the third transistor T3 and the gate electrode of the fourth transistor T4 are both electrically connected to the first electrode of the first transistor T1.
For example, the first transistor T1, the second transistor T2, the third transistor T3, and the fourth transistor T4 are all N-type MOS transistors. The mobility μ, the dielectric constant Cox and the channel width-to-length ratio W/L of the first transistor T1, the second transistor T2, the third transistor T3 and the fourth transistor T4 may all be the same, and by connecting the third transistor T3 between the first pole of the first transistor T1 and the first level terminal GND and connecting the gate of the third transistor T3 to the first pole of the first transistor T1, a cascode structure may be formed, extending the channel length of the first transistor T1; similarly, a cascode structure may also be formed by connecting the fourth transistor T4 between the first pole of the second transistor T2 and the first level terminal GND and connecting the gate of the fourth transistor T4 to the first pole of the first transistor T1, so as to extend the channel length of the second transistor T2. By the cascode structure, the influence of the channel modulation effect may be reduced reducing the channel length modulation effect on the current I in the first transistor T1 1 And the current I in the second transistor T2 2 The accuracy of the detection result is further improved.
It should be noted that, the first conversion module may be a circuit structure based on a similar principle, in addition to the above structure, and this is not specifically limited in the embodiment of the present invention.
Optionally, fig. 7 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention. Referring to fig. 7, the detection circuit array 10 further includes a plurality of second conversion modules 42; the output ends of the first conversion modules 22 electrically connected to the same detection line 11 are electrically connected to the same second conversion module 42 through the detection line 11. The first conversion module 22 is specifically configured to output a detection current signal to the detection line 11 according to the potential of the detection node N; the second conversion module 42 is used for converting the detection current signal on the detection line 11 into a detection voltage signal.
For example, when the potential of the detection node N is converted into the detection current signal, the magnitude of the detection current signal may be influenced by the self-characteristics of the device in the first conversion module 21 or the manufacturing process in addition to the influence of the detection module 21, so that the converted detection current signal has a deviation, the detection current signal is converted into the detection voltage signal by the second conversion module 42, and the potential of the detection node N can be directly obtained from the detection voltage signal without converting the potential of the detection node N by the current value of the detection current signal, thereby avoiding the occurrence of an error in the detection result due to the deviation of the detection current signal, and improving the accuracy of the detection result.
Optionally, fig. 8 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention. Referring to fig. 8, the second conversion block 42 includes a fifth transistor T5, a detection voltage output terminal GS, a second level terminal GND, a third level terminal VDD, a second resistor R2, and a third resistor R3. The gate of the fifth transistor T5 is electrically connected to the detection voltage output terminal GS; a first pole of the fifth transistor T5 is electrically connected to the second level terminal GND; a second pole of the fifth transistor T5 is electrically connected to the third level terminal VDD through the second resistor R2; the third level terminal VDD is electrically connected to the sensing line 11 through a third resistor R3.
For example, taking the fifth transistor T5 as an N-type MOS transistor as an example for description, in this case, the first conversion module 21 may include a first transistor T1 and a second transistor T2, the first transistor T1 and the second transistor T2 are made of the same material and by the same process, and the first transistor T1 and the second transistor T2 may constitute an equal proportion current mirror circuit; mobility mu, dielectric constant Cox, channel width-to-length ratio W/L, threshold voltage Vth and the like in the second transistor T2 and the fifth transistor T5 are the same, the resistance of the second resistor R2 is the same as that of the third resistor R3, the source of the fifth transistor T5 is grounded, the drain of the fifth transistor T5 is electrically connected with the second end of the second resistor R2, and the first end of the second resistor R2 is electrically connected with the third level end VDD, so that a bridge circuit can be formed. The electrical signal provided by the third level terminal VDD can flow to the ground through the second resistor R2 and the fifth transistor T5, and the electrical signal provided by the third level terminal VDD can also flow to the ground through the third resistor R3 and the second transistor T2, by adjusting the voltage VGS of the detection voltage output terminal GS, the drain voltage of the fifth transistor T5 is equal to the drain voltage of the second transistor T2, and at this time, the current I in the fifth transistor T5 flows to the ground S ＝I 2 Since the mobility μ, the dielectric constant Cox, the channel width-to-length ratio W/L, the threshold voltage Vth, and the like in the second transistor T2 and the fifth transistor T5 are all the same, VGS = Vn can be obtained, that is, the voltage Vn of the detection node N can be directly obtained by the voltage VGS of the detection voltage output terminal GS, the influence of the characteristic fluctuation of the transistors on the obtained voltage Vn of the detection node N is avoided, and the precision and accuracy of the detection result are improved.
Optionally, fig. 9 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention. Referring to fig. 9, the detection circuit array 10 further includes at least one filter capacitor C; the first polar plate of the filter capacitor is electrically connected with the input end and/or the output end of the detection module 21; the second polar plate of the filter capacitor C is electrically connected with the fourth level terminal COM; the detection module 21 includes a detection resistor R1; the detection resistor R1 is multiplexed as a first polar plate of the filter capacitor C. The capacitance value of the filter capacitor C is greater than that of the capacitor formed by the detection resistor R1 and the detection line 11.
Illustratively, the detection resistor R1 and the detection line 11 are located in different film structures, and in a direction perpendicular to a plane of the detection circuit array, the detection resistor R1 and the detection line 11 overlap to form some capacitors, and when an electrical signal in the detection resistor R1 changes, the electrical signal in the detection line 11 may be affected; when the electric signal in the detection line 11 changes, the electric signal in the detection resistor R1 may be affected. Through set up filter capacitor C in detection circuitry array 10, the capacitance value of filter capacitor C that detection resistance R1 and filter capacitor C's second polar plate formed can be far more than the capacitance value of the electric capacity that detection resistance R1 and detection line 11 formed, filter capacitor C's second polar plate is connected with the fourth level end COM of fixed potential, when the signal of telecommunication in detection line 11 changes, filter capacitor C's first polar plate's the signal of telecommunication is hardly influenced, the signal of telecommunication in detection capacitor R1 is not influenced almost promptly, filter capacitor C can carry out low pass filtering to the fluctuation of the signal of telecommunication in detection line 11.
In an alternative embodiment, the detection line 11 may also be multiplexed as a first plate of the filter capacitor C, and a capacitance value of the filter capacitor C formed by the detection line 11 and a second plate of the filter capacitor C is greater than a capacitance value of a capacitor formed by the detection resistor R1 and the detection line 11. In this way, when the electrical signal in the detection resistor R1 changes, the electrical signal of the first plate of the filter capacitor C is hardly affected, that is, the electrical signal in the detection line 11 is hardly affected, and the filter capacitor C can perform low-pass filtering on the fluctuation of the electrical signal in the detection resistor R1.
Optionally, fig. 10 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention. Referring to fig. 10, the second plate C02 of the filter capacitor C is disposed in the same layer as the sensing line 11.
Illustratively, the detection resistor R1 and the detection line 11 are located in different film structures, and there is an overlap between the detection resistor R1 and the detection line 11 in a direction perpendicular to the plane of the detection circuit array. At this time, the detection circuit array 10 may include a substrate 101, a first conductive layer 110 and a second conductive layer 120 located on one side of the substrate 101, an insulating layer 102 located between the first conductive layer 110 and the second conductive layer 120, and a planarization layer 103 located on one side of the first conductive layer 110 and the second conductive layer 120 away from the substrate 101, where the first conductive layer 110 includes a second plate C02 of the filter capacitor C and the detection line 11, the second conductive layer 120 includes a detection resistor R1 and a first plate C01 of the filter capacitor C, the detection resistor R1 is multiplexed as the first plate C01 of the filter capacitor C, and the second plate C02 of the filter capacitor C and the detection line 11 are disposed in the same layer, which may perform low-pass filtering on fluctuation of an electrical signal in the detection line 11, may also save routing, save space, and is beneficial to thinning the detection circuit array 10.
In an optional embodiment, the detection line may be reused as the first electrode plate of the filter capacitor, and the second electrode plate of the filter capacitor may be disposed on the same layer as the detection resistor (not shown in the figure), so as to perform low-pass filtering on the fluctuation of the electrical signal in the detection resistor, save the wiring, save the space, and achieve the light and thin detection circuit array.
Optionally, when the detecting module 21 is used to detect the temperature, the detecting module 21 may include a thermistor R201 as shown in fig. 11, where the thermistor R201 may be a pulse structure as shown in the drawing, or may be a winding structure such as a zigzag structure, so that the resistance of the thermistor 201 may be increased, the influence of the routing resistor may be reduced, and the accuracy of detecting the resistance of the thermistor R201 is improved.
Alternatively, when the detecting module 22 is used for detecting light intensity, the detecting module 21 may include a light sensor 211 as shown in fig. 12, and the light sensor 211 includes a detecting transistor T202. The first pole T2021 of the detection transistor T202 is the input end of the detection module 21, and the second pole T2022 of the detection transistor T202 is the output end of the detection module 21; the gate T2023 of the detection transistor T202 receives the gate control signal.
For example, the active layer 2020 of the sensing transistor T202 may be made of a highly doped silicon semiconductor, and mobility in the active layer 2020 may be changed by the illumination intensity, thereby changing the resistance of the active layer 2020. The active layer 2020 has a relatively large resistance value, and can output a gate control signal to the gate T2023 of the detection transistor T202, so that the resistance value of the detection transistor T202 is controlled within a suitable range, which is convenient for detecting the voltage of the detection node N and the voltage change of the detection node N; in addition, the detection transistor T202 may be disposed in the same layer as the transistors in the first conversion module 22 and/or the second conversion module 42, so as to save space and facilitate the light and thin detection circuit array.
Optionally, fig. 13 is a schematic structural diagram of another detection circuit array according to an embodiment of the present invention. Referring to fig. 13, the detection module 21 includes a varistor R203; the extending directions of two piezoresistors 203 connected in series and adjacent to each other intersect.
For example, the substrate of the detection circuit array 10 may be made of a flexible material, when a certain position of the detection circuit array 10 is deformed, the resistance value of the piezoresistor R203 may be changed due to the deformation, the pressure change at different positions may be detected by detecting the resistance value of the piezoresistor R203 at different positions, the extending directions of the two piezoresistors 203 connected in series and connected are intersected, the pressure applied to the two piezoresistors R203 in the extending directions thereof may be detected, and the pressure deformation in the two-dimensional direction may be detected, so as to detect the unevenness and wrinkles at various positions of the detection circuit array 10.
Based on the same inventive concept, an embodiment of the present invention further provides a detection apparatus, fig. 14 is a schematic structural diagram of the detection apparatus provided in the embodiment of the present invention, and referring to fig. 14, the detection apparatus 30 includes the detection circuit array 10 provided in any embodiment of the present invention. The detecting device 30 provided in the embodiment of the present invention may be used for detecting temperature, and may also be used for detecting light intensity or pressure, and the like, which is not particularly limited in the embodiment of the present invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements and substitutions will now be apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (15)
1. An array of detection circuits, comprising: a plurality of detection lines and a plurality of detection units arranged in an array; the detection unit comprises a detection module and a first conversion module;
the detection modules of at least part of the detection units in the same row are sequentially connected in series; the output ends of the detection modules connected in series are respectively and electrically connected with different detection nodes; in each detection module connected in series, the input end of the first detection module receives a scanning signal, and the input ends of the other detection modules except the first detection module and the output end point of the previous detection module are connected to the detection node;
in the same detection unit, the input end of the first conversion module and the output end of the detection module are electrically connected to the detection node; the output ends of the first conversion modules of at least part of the detection units in the same column are electrically connected with the same detection line; the first conversion module is used for outputting a detection signal to the detection line according to the potential of the detection node.
2. The detection circuit array of claim 1, further comprising: a plurality of voltage division modules;
the output end of the last detection module in the detection modules connected in series is electrically connected with the voltage division module at the detection node;
the impedance of the voltage division module is a fixed value.
3. The detection circuit array of claim 2, wherein the detection module comprises a detection resistor; the voltage division module comprises a voltage division resistor;
the resistance value of the divider resistor is larger than that of the detection resistor.
4. The detection circuit array of claim 1, further comprising: a plurality of scanning lines; the detection modules which are positioned in the same row and connected in series are electrically connected through the scanning line;
the detection module comprises a detection resistor; the detection resistor and the scanning line are arranged on the same layer.
5. The detection circuit array of claim 1, wherein the first conversion module comprises a first transistor and a second transistor;
the grid electrode of the first transistor and the grid electrode of the second transistor are electrically connected with the detection node; the first pole of the first transistor and the first pole of the second transistor are both coupled to a first level end; a second pole of the first transistor is electrically connected to the sense node and a second pole of the second transistor is electrically connected to the sense line.
6. The array of claim 5, wherein a channel width to length ratio of the second transistor is greater than a channel width to length ratio of the first transistor.
7. The array of detection circuits of claim 5, wherein the first conversion module includes a third transistor electrically connected between the first pole of the first transistor and the first level terminal, and a fourth transistor electrically connected between the first pole of the second transistor and the first level terminal;
a first electrode of the first transistor is electrically connected with a second electrode of the third transistor, and a first electrode of the third transistor is electrically connected with the first level end; a first electrode of the second transistor is electrically connected with a second electrode of the fourth transistor, and a first electrode of the fourth transistor is electrically connected with the first level end; the grid electrode of the third transistor and the grid electrode of the fourth transistor are both electrically connected with the first electrode of the first transistor.
8. The detection circuit array of claim 1, further comprising: a plurality of second conversion modules;
the output ends of the first conversion modules which are electrically connected with the same detection line are electrically connected with the same second conversion module through the detection line;
the first conversion module is specifically used for outputting a detection current signal to the detection line according to the potential of the detection node;
the second conversion module is used for converting the detection current signal on the detection line into a detection voltage signal.
9. The detection circuit array of claim 8, wherein the second conversion module comprises a fifth transistor, a detection voltage output terminal, a second level terminal, a third level terminal, a second resistor, and a third resistor;
the grid electrode of the fifth transistor is electrically connected with the detection voltage output end; a first electrode of the fifth transistor is electrically connected with the second level end; a second pole of the fifth transistor is electrically connected with the third level end through the second resistor; the third level end is electrically connected with the detection line through the third resistor.
10. The detection circuit array of claim 1, wherein the detection module comprises a thermistor.
11. The detection circuit array of claim 1, further comprising: at least one filter capacitor;
the first polar plate of the filter capacitor is electrically connected with the input end and/or the output end of the detection module; the second pole plate of the filter capacitor is electrically connected with the fourth level terminal; the detection module comprises a detection resistor; the detection resistor is multiplexed into a first polar plate of the filter capacitor;
and the capacitance value of the filter capacitor is greater than that of the capacitor formed by the detection resistor and the detection line.
12. The array of claim 11, wherein the second plate of the filter capacitor is disposed in the same layer as the sensing lines.
13. The array of claim 1, wherein the detection module comprises a light sensor;
the light sensor comprises a detection transistor;
the first pole of the detection transistor is the input end of the detection module, and the second pole of the detection transistor is the output end of the detection module; the gate of the detection transistor receives a gate control signal.
14. The detection circuit array of claim 1, wherein the detection module comprises a voltage dependent resistor; the extending directions of two adjacent piezoresistors which are connected in series are crossed.
15. A detection device, comprising: the detection circuit array of claims 1-14.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211185387.3A CN115585902A (en) | 2022-09-27 | 2022-09-27 | Detection circuit array and detection device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211185387.3A CN115585902A (en) | 2022-09-27 | 2022-09-27 | Detection circuit array and detection device |
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| CN115585902A true CN115585902A (en) | 2023-01-10 |
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| CN202211185387.3A Pending CN115585902A (en) | 2022-09-27 | 2022-09-27 | Detection circuit array and detection device |
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| CN (1) | CN115585902A (en) |
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