CN115579327A - GaN terahertz monolithic circuit with cantilever beam structure and manufacturing method of tube core - Google Patents
GaN terahertz monolithic circuit with cantilever beam structure and manufacturing method of tube core Download PDFInfo
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- CN115579327A CN115579327A CN202211259727.2A CN202211259727A CN115579327A CN 115579327 A CN115579327 A CN 115579327A CN 202211259727 A CN202211259727 A CN 202211259727A CN 115579327 A CN115579327 A CN 115579327A
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a GaN terahertz monolithic circuit with a cantilever beam structure and a tube core, wherein the GaN terahertz monolithic circuit with the cantilever beam structure and the tube core comprise the following steps: the device comprises a substrate, gaN positioned on the substrate, a device positioned on the GaN, a metal layer circuit positioned on the substrate and a cantilever beam positioned on the GaN; the invention is completely compatible with various current GaN microwave power devices and MMIC processes, adopts a mode of etching a substrate in a specific region and GaN to separate most regions of a circuit from a wafer, and finally combines the traditional scribing process to completely separate the terahertz monolithic circuit and the tube core from the wafer, thereby not only forming a cantilever beam structure, but also avoiding the damage of the scribing process to the cantilever beam, and enabling the GaN terahertz monolithic circuit with the cantilever beam structure and the tube core to have the capability of large-scale batch production.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a GaN terahertz monolithic circuit with a cantilever beam structure and a manufacturing method of a tube core.
Background
The signal transmission of the terahertz frequency band is a great difficulty restricting the development of the terahertz technology, the traditional planar dielectric microstrip line is easy to cause larger dispersion and transmission loss, and the novel transmission method such as rectangular waveguide, dielectric slot waveguide or hollow dielectric waveguide can solve the problems of loss and dispersion, but the integration of a microwave radio frequency circuit is not easy to realize. Compared with the currently used planar dielectric microstrip line, the suspended microstrip has better dispersion characteristic and higher Q value, is easy to realize the manufacture of an integrated circuit, and has better engineering application in the aspects of terahertz frequency doubling and mixing and the like.
In order to reduce dielectric loss and dispersion, the thickness of a medium of the suspended microstrip circuit is usually controlled within dozens of micrometers, so that the mechanical strength of the suspended microstrip circuit is weak, and the medium is easy to crack due to operation in the assembly process. The suspension microstrip circuit with the cantilever beam well solves the problem, plays a role in supporting a circuit and loading an electric signal through the cantilever beam, avoids the direct action of stress on a dielectric film in the assembly process, and improves the assembly yield.
The terahertz frequency doubling circuit prepared from the GaN material has high power processing capacity, so the terahertz frequency doubling circuit has attracted extensive attention in the industry in recent years. The manufacturing method of the GaN terahertz thin film integrated circuit with the cantilever beam has high practical value. Thin film circuits are conventionally fabricated by etching or etching away the semiconductor material around the circuit chip and then separating the thin film circuit from the wafer by means of dissociation by soaking in an organic solution. The traditional method leads to the disordered separation of the thin film circuit from the wafer, is not beneficial to the subsequent cleaning and sampling of the thin film circuit and is not suitable for large-scale manufacturing.
Disclosure of Invention
In order to solve the problems, the invention provides a manufacturing method of a GaN terahertz monolithic circuit with a cantilever beam structure and a tube core, which adopts a mode of etching a substrate in a specific region and GaN to separate most regions of the circuit from a wafer, and finally combines the traditional scribing process to completely separate the terahertz monolithic circuit and the tube core from the wafer, thereby not only forming the cantilever beam structure, but also avoiding the damage of the scribing process to the cantilever beam, and enabling the GaN terahertz monolithic circuit with the cantilever beam structure and the tube core to have the capability of large-scale batch production.
In order to achieve the purpose, the invention provides the following technical scheme:
the invention provides a manufacturing method of a GaN terahertz monolithic circuit with a cantilever beam structure and a tube core, wherein the GaN terahertz monolithic circuit with the cantilever beam structure and the tube core comprise the following steps: the manufacturing method of the GaN-based semiconductor device comprises the following steps of:
s1, preparing various integrated devices on an epitaxial wafer consisting of GaN and a substrate;
s2, etching to remove the GaN material in the specific area;
s3, forming a required circuit on the substrate;
s4, bonding the epitaxial wafer and the substrate together;
s5, grinding the back of the substrate to reduce the thickness of the substrate;
s6, etching to remove part of the substrate to expose the GaN in the specific area;
s7, removing the barrier layer to expose the cantilever metal;
s8, separating the GaN epitaxial wafer from the substrate;
and S9, scribing to obtain the GaN terahertz monolithic circuit with the cantilever beam structure and the tube core.
The invention is further arranged as follows: the substrate is SiC or Al 2 O 3 Or diamond.
The invention is further provided with: the GaN is GaN or different combinations of GaN and its ternary compounds, including different combinations of AlGaN or InGaN with GaN.
The invention is further arranged as follows: the device is a GaN active device or other integrated passive device.
The invention is further arranged as follows: the circuit is formed on the substrate and connects the devices.
The invention is further arranged as follows: one end of the cantilever beam is formed and fixed on the GaN, the other end of the cantilever beam is suspended, the number of the cantilever beams can be increased according to specific requirements, and the cantilever beams can also be connected with a circuit or a device according to requirements to form a conducting effect.
Compared with the known public technology, the technical scheme provided by the invention has the following beneficial effects:
the invention is completely compatible with various main GaN microwave power devices and MMIC processes at present, adopts a mode of etching a substrate in a specific region and GaN to separate most regions of a circuit from a wafer, and finally combines the traditional scribing process to completely separate the terahertz monolithic circuit and the tube core from the wafer, thereby not only forming a cantilever beam structure, but also avoiding the damage of the scribing process to the cantilever beam, and leading the GaN terahertz monolithic circuit with the cantilever beam structure and the tube core to have the capacity of large-scale batch production.
Drawings
FIG. 1 is a schematic view of a GaN epitaxial wafer after the device is fabricated according to the present invention;
FIG. 2 is a schematic diagram of the invention after etching of GaN in a specific region;
FIG. 3 is a schematic cross-sectional view of the microstrip circuit and the cantilever beam after being fabricated according to the present invention;
FIG. 4 is a top view of the microstrip circuit and the cantilever beam after they have been fabricated in accordance with the present invention;
FIG. 5 is a schematic view of the bonded wafer of the present invention;
FIG. 6 is a schematic diagram of the present invention after etching the substrate material in a specific area;
FIG. 7 is a schematic diagram of the invention after etching of the GaN material in the specific region;
FIG. 8 is a schematic view of the invention after separation of the wafer;
FIG. 9 is a top view of the wafer of the present invention after separation;
fig. 10 is a schematic diagram of a GaN terahertz monolithic circuit with a cantilever beam structure and a die after scribing according to the present invention.
The reference numbers in the figures illustrate:
1. a substrate; 2. GaN; 3. a device; 4. a circuit; 5. a cantilever beam; 6. bonding wax; 7. a substrate; 8. scribing a groove track.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is to be understood that the embodiments described are merely exemplary embodiments, rather than exemplary embodiments, and that all other embodiments may be devised by those skilled in the art without departing from the scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", etc. indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings, which are merely for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other; the specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example (b):
as shown in fig. 1 to 10, the GaN terahertz monolithic circuit with a cantilever structure and the die provided by the present invention include: the device comprises a substrate 1, gaN2 located on the substrate 1, a device 3 located on the GaN2, a metal layer circuit 4 located on the substrate 1, and a cantilever beam 5 located on the GaN2.
The invention provides a manufacturing method of a GaN terahertz monolithic circuit with a cantilever beam structure and a tube core, which comprises the following steps:
(1) Various integrated devices 3 are fabricated on an epitaxial wafer composed of GaN2 and substrate 1.
Further, the substrate 1 is SiC or Al 2 O 3 Or diamond.
Further, gaN2 is GaN or various combinations of GaN and its ternary compounds, including various combinations of AlGaN or InGaN with GaN.
Further, the device 3 is a GaN active device or other integrated passive device.
In this step, it should be noted that, as shown in fig. 1, the 0001 direction of GaN2 is perpendicular to the horizontal plane, and is a material with Ga-face polarity, and the thickness is between 200nm and 5 μm.
(2) And etching to remove the GaN material in the specific area.
In this step, it should be noted that, in the present invention, an etching stop layer is formed by photolithography, a Cl-based inductively coupled plasma etching method is adopted to remove the GaN material in a specific region, and only a portion of GaN2 around the device 3 and the cantilever 5 is retained. The etching barrier layer is a photoresist mask, the thickness of the photoresist mask is between 6 μm and 12 μm, the remaining etching barrier layer is removed after etching, and the result after etching the GaN in the specific region is shown in fig. 2.
(3) The desired circuitry 4 is formed on the substrate 1.
Further, a circuit 4 is formed on the substrate 1 and connected to the device 3.
Further, cantilever beam 5 one end forms and fixes on GaN2, and the other end is unsettled, and cantilever beam 5's quantity can increase the quantity according to specific demand, also can be connected with circuit 4 or device 3 according to the demand and form cantilever beam 5 that plays the effect of switching on.
In this step, it should be noted that a photoresist mask pattern is formed by photolithography to prepare the circuit 4 and the cantilever 5, a metal is formed at the photoresist mask pattern by evaporation or electroplating, then the photoresist mask is removed by a lift-off process to form the circuit 4 on the substrate 1, and the cantilever 5 is formed on the GaN2. The thickness of the photoresist mask is between 6 microns and 12 microns, the thickness of the circuit 4 and the cantilever 5 is between 0.5 microns and 6 microns, the circuit 4 is formed on the substrate 1, the circuit 4 is connected with the device 3, the cantilever 5 is formed on the GaN2, and the cantilever 5 can be used as a supporting structure only or can be used as an electric port according to requirements. The results after the circuit 4 and cantilever 5 are prepared are shown in fig. 3 and 4.
(4) The epitaxial wafer and the substrate 7 are bonded together.
In this step, it should be noted that the bonding wax 6 is spin-coated on the front surface of the whole epitaxial wafer and bonds the epitaxial wafer and the substrate 7 together, so as to facilitate the subsequent processing of the back surface of the epitaxial wafer. The thickness of the bonding wax 6 is between 10 μm and 50 μm, the thickness of the substrate 7 is between 300 μm and 1000 μm, and the results after bonding are shown in fig. 5.
(5) The back surface of the substrate 1 is polished to reduce the thickness of the substrate 1.
In this step, as an embodiment, the back surface of the substrate 1 is polished by a diamond grinding wheel to reduce the thickness of the substrate 1.
(6) A portion of substrate 1 is etched away to expose GaN2 in a specific region.
In this step, it should be noted that the etching barrier metal 8 is formed by an electroplating process, and then a portion of the substrate 1 is etched away to expose the GaN2 in a specific region. And forming a photoresist mask required by electroplating through photoetching, and forming an etching barrier layer metal 8 after electroplating and photoresist removing, wherein the thickness of the etching barrier layer metal 8 is between 4 and 10 mu m. The etching substrate 1 adopts an F-based inductively coupled plasma etching mode, the etching selection ratio of etching gas to the substrate 1 and the GaN2 is larger than 10, the residual etching barrier layer metal 8 is removed through a wet etching mode after etching, and the effect after completing the substrate etching is shown in FIG. 6.
(7) The barrier layer is removed to expose the cantilever 5 metal.
In this step, it should be noted that, the etched substrate 1 is used as an etching mask, and the GaN2 material in the specific region below the cantilever beam and the like is removed by dry etching or wet etching. Etching is carried out in a Cl-based inductively coupled plasma etching mode; the wet etching adopts a hot phosphoric acid etching or KOH solution etching mode. The physicochemical process for etching or corroding GaN2 is to ensure that lateral etching or corrosion parallel to the wafer surface will not occur to the bonding wax 6, and damage to the device 3 will be prevented, the result after etching or corroding GaN is shown in fig. 7.
(8) The GaN epitaxial wafer is separated from the substrate 7.
In this step, the GaN epitaxial wafer is separated from the substrate 7, and the residual bonding wax 6 is removed; the result of this step is shown in fig. 8, in which one end of the cantilever 5 is suspended in the air and the other end is in contact with GaN2 to fix. The GaN terahertz monolithic circuit and the tube core are connected into a whole through the substrate 1, wherein air is arranged on two sides of the tube core with the cantilever beam 5, and the other two sides are connected into a whole through the substrate 1.
(9) And obtaining the GaN terahertz monolithic circuit with the cantilever structure and the tube core after scribing.
In this step, it should be noted that after dicing, a GaN terahertz monolithic circuit with a cantilever structure and a die are obtained. On the basis of the step shown in fig. 8, the wafer is diced along the unetched dicing groove track 8 shown in fig. 9, so that the single GaN terahertz monolithic circuit and the die are changed into a single circuit chip from the whole, and the diced GaN terahertz monolithic circuit and the die are shown in fig. 10.
The above examples are only intended to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.
Claims (6)
1. A manufacturing method of a GaN terahertz monolithic circuit with a cantilever beam structure and a tube core is characterized in that the GaN terahertz monolithic circuit with the cantilever beam structure and the tube core comprise the following steps: the manufacturing method of the GaN-based semiconductor device comprises a substrate (1), gaN (2) located on the substrate (1), a device (3) located on the GaN (2), a metal layer circuit (4) located on the substrate (1) and a cantilever beam (5) located on the GaN (2), and comprises the following steps:
s1, preparing various integrated devices (3) on an epitaxial wafer consisting of GaN (2) and a substrate (1);
s2, etching and removing the GaN material in the specific area;
s3, forming a required circuit (4) on the substrate (1);
s4, bonding the epitaxial wafer and the substrate (7) together;
s5, grinding the back surface of the substrate (1) to reduce the thickness of the substrate (1);
s6, etching to remove part of the substrate (1) to expose the GaN (2) in the specific area;
s7, removing the barrier layer to expose the metal of the cantilever beam (5);
s8, separating the GaN epitaxial wafer from the substrate (7);
and S9, scribing to obtain the GaN terahertz monolithic circuit with the cantilever beam structure and the tube core.
2. The manufacturing method of the GaN terahertz monolithic circuit with the cantilever structure and the manufacturing method of the tube core of the GaN terahertz monolithic circuit with the cantilever structure as claimed in claim 1, wherein the substrate (1) is SiC or Al 2 O 3 Or diamond.
3. The manufacturing method of the GaN terahertz monolithic circuit with the cantilever beam structure and the die is characterized in that the GaN (2) is GaN or different combinations of GaN and ternary compounds thereof, including different combinations of AlGaN or InGaN and GaN.
4. The manufacturing method of the GaN terahertz monolithic circuit with the cantilever beam structure and the die is characterized in that the device (3) is a GaN active device or an integrated other passive device.
5. The manufacturing method of the GaN terahertz monolithic circuit with the cantilever beam structure and the die is characterized in that the circuit (4) is formed on the substrate (1) and connected with the device (3).
6. The manufacturing method of the GaN terahertz monolithic circuit with the cantilever structure and the tube core are characterized in that one end of the cantilever (5) is formed and fixed on the GaN (2), the other end of the cantilever is suspended, the number of the cantilevers (5) can be increased according to specific requirements, and the cantilevers (5) can be connected with a circuit (4) or a device (3) to form the cantilevers (5) which have a conducting function according to requirements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211259727.2A CN115579327A (en) | 2022-10-14 | 2022-10-14 | GaN terahertz monolithic circuit with cantilever beam structure and manufacturing method of tube core |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211259727.2A CN115579327A (en) | 2022-10-14 | 2022-10-14 | GaN terahertz monolithic circuit with cantilever beam structure and manufacturing method of tube core |
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| CN115579327A true CN115579327A (en) | 2023-01-06 |
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| CN202211259727.2A Pending CN115579327A (en) | 2022-10-14 | 2022-10-14 | GaN terahertz monolithic circuit with cantilever beam structure and manufacturing method of tube core |
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