CN108417486A - A kind of GaN base SBD frequency changer circuits and preparation method thereof - Google Patents
A kind of GaN base SBD frequency changer circuits and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 129
- 229910052751 metal Inorganic materials 0.000 claims abstract description 129
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 15
- 239000010432 diamond Substances 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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Abstract
The invention belongs to Terahertz high-frequency elements and integrated circuit preparation field, disclose a kind of GaN base SBD frequency changer circuits, include the circuit based on diamond substrate and the GaN base SBD device based on vertical electrode, the circuit based on diamond substrate is from bottom to up successively including substrate, first layer metal, second layer metal, first layer dielectric layer, GaN buffer layers, n+GaN layers, n GaN layers, third layer metal, second layer dielectric layer and the 4th layer of metal；The production method for also disclosing GaN base SBD frequency changer circuits, the present invention allows the advantage of third generation wide bandgap semiconductor GaN and diamond to be fully used and integrate by structure and technological innovation, for realizing high power, the high-performance variable frequency circuit of high-temperature reliability.
Description
Technical field
The invention belongs to Terahertz high-frequency elements and integrated circuit preparation field, and in particular to a kind of GaN base SBD variable-frequency electrics
Road and preparation method thereof.
Background technology
Terahertz (THz) wave refers to electromagnetic wave of the frequency in 0.1THz to 10THz ranges, between microwave and infrared ray it
Between, there is extremely important learning value and Practical significance.In single-chip integration Terahertz frequency multiplication and mixting circuit direction, GaAs bases
SBD THz devices and on piece integrate frequency changer circuit and have developed for many years, have had ripe and specific technology path, such as
Master technologies and without substrate film (membrance) technology.Compared with GaAs, (GaN) based schottky diode (SBD) terahertz
The hereby research of device and frequency changer circuit still belongs to starting stage, especially on piece and integrates GaN base SBD Terahertzs frequency changer circuit side
To due to the special hexagonal system structure of GaN material and anticorrosion properties etc., it is difficult to pass through selective wet etching technique
It realizes similar to GaAs without substrate film (membrance) on piece integrated technique.And in the integrated change of GaAs base SBD Terahertz on pieces
Due Master technologies in frequency circuit, because the presence of bonding glue, causes to generate in schottky junction and LO oscillators a large amount of
Heat can not be exported quickly, and the reliability of device and high power applications is caused to be restricted, simultaneously because at present in extension GaN
Usually there is larger stress, it is difficult to by be thinned, polishing process, by gallium nitride (GaN) material be thinned to 30 microns or less without
Fragmentation.Therefore, there is presently no the technical solutions that a specific on piece integrates GaN base SBD Terahertz frequency changer circuits.
Invention content
In order to solve the above problem of the existing technology, present invention aims at provide a kind of GaN base SBD frequency changer circuits
And preparation method thereof, specifically provide a kind of GaN base SBD Terahertzs frequency changer circuit and its system based on vertical electrode bonded substrate
Make method.
The technical solution adopted in the present invention is：
A kind of GaN base SBD frequency changer circuits of the present invention include circuit based on diamond substrate and based on vertical electrode
GaN base SBD device, the circuit based on diamond substrate include substrate, first layer metal, second layer gold successively from bottom to up
Category, first layer dielectric layer, GaN buffer layers, n+GaN layers, n-GaN layers, third layer metal, second layer dielectric layer and the 4th layer of gold
Belong to, is connected by way of metal-metal Direct Bonding between the first layer metal and the second layer metal and/or described
It is connected by way of metal-metal Direct Bonding between first layer metal and the 4th layer of metal.
Further, the substrate is with the substrate that diamond, Si or sapphire are support, and the upper layer of the substrate is gold
The thickness of hard rock monocrystalline, polycrystalline or noncrystal membrane, the substrate is more than 1nm.
Further, the first layer metal makes over the substrate, for realizing the electricity in frequency multiplication and mixting circuit
Road function, the first layer metal also serves as the bond wire pad points of the GaN base SBD device based on vertical electrode, described
50nm-50 μm of the thickness of first layer metal, the first layer metal, the second layer metal and the 4th layer of metal material
It is one or more stackings in Ti, Al, Ni, Cr, Pt, Cu, Ag and Au.
Further, the second layer metal is the cathode ohmic electricity of the GaN base SBD device based on vertical electrode
Pole, thickness are 50nm-50 μm.
Further, the material of the first layer dielectric layer and the second layer dielectric layer is SiN, SiO2、HfO2、
ZrO2、Y2O3, AlN and Al2O3In it is one or more, the thickness of the first layer dielectric layer and the second layer dielectric layer is
0-10μm。
Further, the GaN buffer layers are semi-insulated GaN buffer layers, and 0-10 μm of thickness, described n+GaN layers is n
The GaN layer of type doping, doping concentration are more than 8 × 1017/cm3, n+GaN layers of the thickness is 100nm-10 μm, the n-
The doping concentration of GaN layer is 1 × 1016/cm3-2×1018/cm3, n-GaN layers of the thickness is 50nm-3 μm.
Further, the third layer metal is the Schottky anode of the GaN base SBD device based on vertical electrode,
Its thickness is 50nm-50 μm, and the material of the third layer metal is one or more heaps in Ni, Ti, Cr, Pt, Ag and Au
It is folded.
Further, the 4th layer of metal is to thicken metal, and the 4th layer of metal is used as electrode PAD, by Xiao
Special base anode and/or cathode ohmic electrode guide to the electrode PAD, while realizing the thickening of electrode PAD, the 4th layer of metal
Thickness be 300nm-20 μm.
The invention also discloses a kind of production methods of GaN base SBD frequency changer circuits, include the following steps：
(1) GaN buffer layers, n+GaN layers and n-GaN layers described, the shape described in epitaxial growth successively in epitaxial substrate
At epitaxial growth structure；
(2) corresponding metallic pattern is made according to design layout on substrate and metal-metal is bonded pad points, in the lining
The making of first layer metal is completed on bottom；
(3) from the epitaxial growth structure in strip step (1) in the epitaxial substrate, then on the GaN buffer layers
First layer dielectric layer described in selective deposition recycles one or both of photoetching process and etching technics technique to remove described
GaN buffer layers, expose n+GaN layers described, and the GaN base SBD based on vertical electrode is finally made on the n+GaN layers
The cathode ohmic electrode of device completes the making of second layer metal；
(4) second layer dielectric layer described in selective deposition on the n-GaN layers, makes on the second layer dielectric layer
The Schottky anode of the GaN base SBD device based on vertical electrode；
Or (4) second layer dielectric layer described in selective deposition on the n-GaN layers, utilize photoetching process and etching technics
One or both of technique remove it is n-GaN layers described, expose it is n+GaN layers described, then on the n+GaN layers make described in
The cathode ohmic electrode of GaN base SBD device based on vertical electrode finally makes the base on the second layer dielectric layer
In the Schottky anode of the GaN base SBD device of vertical electrode；
(5) the is completed by one or more techniques in photoetching, evaporation, dielectric layer etching, GaN etchings and smithcraft
The making of four layers of metal；
(6) between the second layer metal in the first layer metal and step (3) in step (2) and/or step (2) first
Pad points are bonded by metal-metal between layer metal and the 4th layer of metal in step (5) and do direct metal-metal bonding；
(7) according to specific technical flow design, above-mentioned steps (2)-(4) are exchanged or is combined, completed based on vertical
The making of the GaN base SBD frequency changer circuits of straight electrode bonded substrate.
Beneficial effects of the present invention are：
The present invention allows the advantage of third generation wide bandgap semiconductor GaN and diamond to obtain by structure and technological innovation
It makes full use of and integrates, for realizing high power, the high-performance variable frequency circuit of high-temperature reliability.It is bonded and is served as a contrast based on vertical electrode
The GaN base SBD frequency changer circuits at bottom are done directly by making circuit on substrate, and with the GaN base SBD device based on vertical electrode
Metal-Metal bonding is connect, first, electric current vertically can flow through n-GaN, n+GaN from Schottky anode, reach cathode ohmic electricity
Pole, electric current has obtained fully extending in device, avoids electric current collection side benefit and electric current congestion phenomenon；The transmission of high-frequency signal
Also it is vertically oriented, reduces the limitation to n+GaN layer thickness because of Kelvin effect；Importantly, circuit and device pass through light
Carve precision metal-metal bonding, abandoned in conventional bonding techniques be bonded glue use, avoid glue low heat emission performance and
Inhibition of the high drain performance to circuit module, while the assembly precision of frequency changer circuit is improved, it reduces because rigging error is brought
Matching loss problem, improve the temperature stability of entire circuit, the present invention is especially suitable for the high powers of terahertz wave band
GaN base Schottky single tube device and on piece integrate frequency changer circuit.
Description of the drawings
Fig. 1 is the side view of the GaN base SBD frequency changer circuits of the embodiment of the present invention one.
Fig. 2-Fig. 5 is a kind of structural schematic diagram of the process of the production method of GaN base SBD frequency changer circuits of the present invention, tool
Body is as follows：
Fig. 2 is the GaN base SBD device completion epitaxial substrate stripping based on vertical electrode of the embodiment of the present invention one, then
Side view after being transferred on temporary substrates.
After Fig. 3 completes the metal deposition process of circuit for the substrate of the GaN base SBD frequency changer circuits of the embodiment of the present invention one
Side view.
Fig. 4 is the GaN base SBD device and substrate completion direct metal-based on vertical electrode of the embodiment of the present invention one
Side view after metal bonding.
Fig. 5 is after the GaN base SBD frequency changer circuits of the embodiment of the present invention one complete direct metal-metal bonding, makes the
Side view before four layers of metal.
Fig. 6 is the side view of the GaN base SBD frequency changer circuits of the embodiment of the present invention two.
In figure：1- substrates；2- first layer metals；3- second layer metals；4- first layer dielectric layers；5-GaN buffer layers；6-n+
GaN layer；7-n-GaN layers；8- third layer metals；9- second layer dielectric layers；The 4th layer of metal of 10-；101- temporary substrates；11- is served as a contrast
Bottom；12- first layer metals；13- second layer metals；14- first layer dielectric layers；15-GaN buffer layers；16-n+GaN layers；17-n-
GaN layer；18- third layer metals；19- second layer dielectric layers；The 4th layer of metal of 20-.
Specific implementation mode
Below in conjunction with the accompanying drawings and specific embodiment does further explaination to the present invention.
Embodiment one：
Include the GaN base SBD based on vertical electrode as shown in Figure 1, the present embodiment provides a kind of GaN base SBD frequency changer circuits
Device, the GaN base SBD device based on vertical electrode include substrate 1, first layer metal 2, second layer gold successively from bottom to up
Belong to 3, first layer dielectric layer 4, GaN buffer layers 5, n+GaN layers 6, n-GaN layers 7, third layer metal 8, second layer dielectric layer 9 and the
Four layers of metal 10, between the first layer metal 2 and the second layer metal 3 and/or first layer metal 2 and the 4th layer of metal 10
Between connected by way of metal-metal Direct Bonding so that the first layer metal and the second layer metal and/or institute
The tie point for stating first layer metal and the 4th layer of metal has the function of loading direct current and AC signal.Circuit and device are logical
The metal-metal bonding for crossing lithographic accuracy, has abandoned the use for being bonded glue in conventional bonding techniques, has avoided the low heat emission of glue
Energy and inhibition of the high drain performance to circuit module, while assembly precision is improved, reduce the matching brought by rigging error
Loss problem improves the temperature stability of entire circuit.
Wherein, substrate 1 can be with the substrate of diamond self-supporting, can also be with Si or sapphire be support lining
The upper layer at bottom, substrate is diamond single crystal, polycrystalline or noncrystal membrane, and the thickness of substrate 1 is more than 1nm.
First layer metal 2 is produced on substrate (such as diamond substrate), for realizing the circuit in frequency multiplication and mixting circuit
Function, also serves as the bond wire pad points of the GaN base SBD device based on vertical electrode, and thickness is 50nm-50 μm.
Second layer metal 3 is the cathode ohmic electrode of the GaN base SBD device based on vertical electrode, and second layer metal 3 is used for
Direct metal-metal bonding is carried out with first layer metal, the thickness of second layer metal 3 is 50nm-50 μm.
The material of first layer dielectric layer 4 and second layer dielectric layer 9 is SiN, SiO2、HfO2、ZrO2、Y2O3, AlN and
Al2O3In it is one or more, it is not limited to the above different materials, the thickness of first layer dielectric layer 4 and second layer dielectric layer 9
Degree is 0-10 μm.
GaN buffer layers 5 are semi-insulated GaN buffer layers, and thickness is 0-10 μm, generally 2 μm or so.
The doping concentration of the n-GaN layers 7 is 1 × 1016/cm3-2×1018/cm3, the thickness of the n-GaN layers 7 is
50nm-3μm。
The n+GaN layers 6 are the GaN layer of N-shaped doping, and doping concentration is more than 8 × 1017/cm3, can be uniform doping
Single layer, can also be the multilayered structure of a variety of doping combinations, the thickness ranges of n+GaN layers 6 is 100nm-10 μm, usually
1.5μm。
The doping concentration of n-GaN layers 7 is 1 × 1016/cm3-2×1018/cm3, thickness range is 50nm-3 μm, usually
200nm。
Third layer metal 8 be the GaN base SBD device based on vertical electrode Schottky anode, 50nm-50 μm of thickness,
The material of the third layer metal is one or more stackings in Ni, Ti, Cr, Pt, Ag and Au, but is not limited to above-mentioned metal
Type.
4th layer of metal 10 is to thicken metal, can be used as anode PAD, is carved using photoetching, evaporation, dielectric layer etching, GaN
Erosion, smithcraft and etc. make air bridges, the Schottky anode and/or cathode ohmic electrode are guided into the electrode PAD,
The thickening of anode PAD is realized simultaneously, and the thickness of the 4th layer of metal 10 is 300nm-20 μm.
The material of the first layer metal 2, the second layer metal 3 and the 4th layer of metal 20 be Ti, Al, Ni,
One or more stackings in Cr, Pt, Cu, Ag and Au, but it is not limited to above-mentioned metal types.
In the present embodiment, first layer metal 2 and second layer metal 3 and/or first layer metal 2 and the 4th layer of metal 10
Tie point has the function of loading direct current and AC signal.Electric current vertically can flow through n-GaN, n+GaN from Schottky anode, arrive
Up to cathode ohmic electrode, the electric current in device has obtained fully extending, and avoids electric current collection side benefit and electric current congestion phenomenon.
As shown in Figure 2-5, the production method of this embodiment is as follows：
(1) GaN buffer layers 5, n+GaN layers 6 and the n-GaN described in epitaxial growth successively in epitaxial substrate 101
Layer 7 forms epitaxial growth structure；For use.
(2) corresponding metallic pattern and metal-metal bonding are made according to design layout on substrate 1 (such as diamond substrate)
Pad points, metal-metal bonding pad points reserve it is spare, so that subsequent step carries out direct metal-metal bonding.Thus
The making of first layer metal 2 is completed on the substrate 1.
(3) using laser lift-off equipment, the epitaxial growth structure from strip step in epitaxial substrate (1) then exists
Selective deposition (being deposited using dielectric deposition equipment) the first layer dielectric layer 4 on the GaN buffer layers 5, then profit
Remove the GaN buffer layers 5 with one or both of photoetching process and etching technics technique, expose the n+GaN layers 6,
Smithcraft and annealing process is finally utilized to make the GaN base SBD device based on vertical electrode on the n+GaN layers 6
Cathode ohmic electrode；In this way second layer metal 3 as the GaN base SBD device based on vertical electrode cathode ohmic electrode just
It completes.Fig. 2 is that the GaN base SBD device based on vertical electrode of the present embodiment completes epitaxial substrate stripping, is then transferred to
Side view after on temporary substrates 101.
(4) selective deposition (being deposited using the dielectric deposition equipment) second layer is situated between on the n-GaN layers 7
Matter layer 9 is situated between by one or more techniques in photoetching, evaporation, dielectric layer etching, GaN etchings and smithcraft in the second layer
The manufacture craft of the Schottky anode of the GaN base SBD device based on vertical electrode is completed on matter layer 9；The third described in this way
Layer metal 8 is that the Schottky anode of the GaN base SBD device based on vertical electrode just completes.
(5) the is completed by one or more techniques in photoetching, evaporation, dielectric layer etching, GaN etchings and smithcraft
The making of four layers of metal 10；Into sample flow piece state.
(6) between the second layer metal in the first layer metal and step (3) in step (2) and/or step (2) first
Pad points are bonded by metal-metal between layer metal and the 4th layer of metal in step (5) and do direct metal-metal bonding；
It is bonded by the metal-metal of lithographic accuracy, improves the assembly precision of the GaN base SBD device based on vertical electrode.
(7) especially above-mentioned steps (2), (3) and (4) are carried out it should be mentioned that according to specific technical flow design
It exchanges or combines, complete the making of the GaN base SBD frequency changer circuits based on vertical electrode bonded substrate.
Embodiment two：
As shown in fig. 6, the label of the component of embodiment two is corresponding with the label of the component of embodiment.Such as the lining of embodiment
Bottom is marked as 1, and the substrate of embodiment two is marked as 11, and the first metal of embodiment one is marked as 2, the first metal of embodiment two
Layer is marked as 12, and so on.Every layer of material of embodiment two is identical with every layer of material of embodiment one, second embodiment
It is step (4) with the main difference of first embodiment.The step of embodiment two (4), is specific as follows：
Selective deposition (being deposited using the dielectric deposition equipment) second layer medium on the n-GaN layers 7
Layer 9, removes the n-GaN layers 7 using one or both of photoetching process and etching technics technique, exposes the n+GaN
Layer 6 recycles one or both of smithcraft and annealing process technique to be made on the n+GaN layers 6 described based on vertical
The cathode ohmic electrode of the GaN base SBD device of straight electrode, in this way when complete embodiment two the step of after (3) and (4), due to
First layer dielectric layer 4 is in the lower section of n+GaN layers 6 and second layer dielectric layer 9 is in the top of n+GaN layers 6, and there have been in n+GaN
The bottom and top of layer 6 respectively make the case where cathode ohmic electrode, the two cathode ohmic electrodes can by n+GaN layers 6
Form low-resistance current path.
Finally, by one or more techniques of photoetching, evaporation, dielectric layer etching, GaN etchings and smithcraft second
The manufacture craft of the Schottky anode of the GaN base SBD device based on vertical electrode is completed on layer dielectric layer 9, it is described in this way
Third layer metal 8 is that the Schottky anode of the GaN base SBD device based on vertical electrode just completes.
Other manufacture crafts are identical as embodiment one, and details are not described herein again.
In conclusion the present invention is a kind of by structure and technological innovation, third generation wide bandgap semiconductor GaN and Buddha's warrior attendant are allowed
The advantage of stone material is fully used and is integrated, for realizing high power, the high-performance variable frequency circuit of high-temperature reliability.
The present invention is not limited to above-mentioned optional embodiment, anyone can show that other are each under the inspiration of the present invention
The product of kind form.Above-mentioned specific implementation mode should not be understood the limitation of pairs of protection scope of the present invention, protection of the invention
Range should be subject to be defined in claims, and specification can be used for interpreting the claims.
Claims (9)
1. a kind of GaN base SBD frequency changer circuits, it is characterised in that：Include circuit based on diamond substrate and is based on vertical electrode
GaN base SBD device, the circuit based on diamond substrate from bottom to up successively include substrate, first layer metal, the second layer
Metal, first layer dielectric layer, GaN buffer layers, n+GaN layers, n-GaN layers, third layer metal, second layer dielectric layer and the 4th layer of gold
Belong to, is connected by way of metal-metal Direct Bonding between the first layer metal and the second layer metal and/or described
It is connected by way of metal-metal Direct Bonding between first layer metal and the 4th layer of metal.
2. a kind of GaN base SBD frequency changer circuits according to claim 1, it is characterised in that：The substrate be with diamond,
Si or sapphire are the substrate of support, and the upper layer of the substrate is diamond single crystal, polycrystalline or noncrystal membrane, the thickness of the substrate
Degree is more than 1nm.
3. a kind of GaN base SBD frequency changer circuits according to claim 2, it is characterised in that：The first layer metal is produced on
On the substrate, for realizing the circuit function in frequency multiplication and mixting circuit, the first layer metal also serves as described based on vertical
The bond wire pad points of the GaN base SBD device of straight electrode, 50nm-50 μm of the thickness of the first layer metal, the first layer
The material of metal, the second layer metal and the 4th layer of metal is one kind in Ti, Al, Ni, Cr, Pt, Cu, Ag and Au
Or a variety of stacking.
4. a kind of GaN base SBD frequency changer circuits according to claim 3, it is characterised in that：The second layer metal is described
The cathode ohmic electrode of GaN base SBD device based on vertical electrode, thickness are 50nm-50 μm.
5. a kind of GaN base SBD frequency changer circuits according to claim 4, it is characterised in that：The first layer dielectric layer and institute
The material for stating second layer dielectric layer is SiN, SiO2、HfO2、ZrO2、Y2O3, AlN and Al2O3In it is one or more, described
The thickness of one layer of dielectric layer and the second layer dielectric layer is 0-10 μm.
6. a kind of GaN base SBD frequency changer circuits according to claim 5, it is characterised in that：The GaN buffer layers are half exhausted
The GaN buffer layers of edge, 0-10 μm of thickness, the described n+GaN layers GaN layer for N-shaped doping, doping concentration are more than 8 × 1017/
cm3, n+GaN layers of the thickness is 100nm-10 μm, and n-GaN layers of the doping concentration is 1 × 1016/cm3-2×1018/
cm3, n-GaN layers of the thickness is 50nm-3 μm.
7. a kind of GaN base SBD frequency changer circuits according to claim 6, it is characterised in that：The third layer metal is described
The Schottky anode of GaN base SBD device based on vertical electrode, thickness are 50nm-50 μm, the material of the third layer metal
For one or more stackings in Ni, Ti, Cr, Pt, Ag and Au.
8. a kind of GaN base SBD frequency changer circuits according to claim 7, it is characterised in that：The 4th layer of metal is to thicken
Metal, the 4th layer of metal are used as electrode PAD, the Schottky anode and/or cathode ohmic electrode are guided to the electrode
PAD, while realizing the thickening of electrode PAD, the thickness of the 4th layer of metal is 300nm-20 μm.
9. a kind of production method of GaN base SBD frequency changer circuits described in any one of claim 1-8 claims, feature exist
In including the following steps：
(1) the GaN buffer layers described in epitaxial growth, n+GaN layers and n-GaN layers described described successively in epitaxial substrate, form outer
Epitaxial growth structure；
(2) corresponding metallic pattern is made according to design layout on substrate and metal-metal is bonded pad points, over the substrate
Complete the making of first layer metal；
(3) it from the epitaxial growth structure in strip step (1) in the epitaxial substrate, is then selected on the GaN buffer layers
Property the deposition first layer dielectric layer, recycle one or both of photoetching process and etching technics technique to remove the GaN
Buffer layer, exposes n+GaN layers described, and the GaN base SBD devices based on vertical electrode are finally made on the n+GaN layers
The cathode ohmic electrode of part completes the making of second layer metal；
(4) second layer dielectric layer described in selective deposition on the n-GaN layers, on the second layer dielectric layer described in making
The Schottky anode of GaN base SBD device based on vertical electrode；
Or (4) second layer dielectric layer described in selective deposition on the n-GaN layers, using in photoetching process and etching technics
One or two kinds of techniques remove it is n-GaN layers described, expose it is n+GaN layers described, then on the n+GaN layers make described in be based on
The cathode ohmic electrode of the GaN base SBD device of vertical electrode finally makes described based on vertical on the second layer dielectric layer
The Schottky anode of the GaN base SBD device of straight electrode；
(5) the 4th layer is completed by one or more techniques in photoetching, evaporation, dielectric layer etching, GaN etchings and smithcraft
The making of metal；
(6) between the second layer metal in the first layer metal and step (3) in step (2) and/or the first layer of step (2) gold
Belong to and pad points are bonded by metal-metal between the 4th layer of metal in step (5) do the bonding of direct metal-metal；
(7) according to specific technical flow design, above-mentioned steps (2)-(4) are exchanged or is combined, completed based on vertical electricity
The making of the GaN base SBD frequency changer circuits of pole bonded substrate.
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