CN115573035A - Silicon carbide high-temperature oxidation furnace device - Google Patents
Silicon carbide high-temperature oxidation furnace device Download PDFInfo
- Publication number
- CN115573035A CN115573035A CN202110764104.XA CN202110764104A CN115573035A CN 115573035 A CN115573035 A CN 115573035A CN 202110764104 A CN202110764104 A CN 202110764104A CN 115573035 A CN115573035 A CN 115573035A
- Authority
- CN
- China
- Prior art keywords
- flange
- pipe
- quartz
- furnace body
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 25
- 230000003647 oxidation Effects 0.000 title claims abstract description 24
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 86
- 230000008569 process Effects 0.000 claims abstract description 86
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 86
- 239000010453 quartz Substances 0.000 claims abstract description 84
- 238000007789 sealing Methods 0.000 claims abstract description 36
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 claims description 24
- 239000002775 capsule Substances 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 230000006835 compression Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 5
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 4
- 239000004917 carbon fiber Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 210000001503 joint Anatomy 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 63
- 230000006872 improvement Effects 0.000 description 7
- 230000002349 favourable effect Effects 0.000 description 6
- 239000000110 cooling liquid Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a silicon carbide high-temperature oxidation furnace device which comprises a furnace body and a furnace body flange arranged on the furnace body, wherein a process tube is arranged in the furnace body, one end of the process tube penetrates through the furnace body flange, a process tube flange is arranged on the periphery of the process tube, a quartz tube is arranged in the process tube, one end of the quartz tube penetrates through the process tube and is provided with a quartz tube flange, a quartz tube bearing flange is arranged between the quartz tube flange and the process tube flange, a first sealing element is arranged between the furnace body flange and the process tube flange, a second sealing element is arranged between the process tube and the process tube flange, a third sealing element is arranged between the quartz tube bearing flange and the quartz tube flange, and the furnace body flange and the process tube flange are both liquid cooling flanges. The invention has the advantages of simple and reliable structure, contribution to reducing the working temperature of the sealing part, prolonging the service life of the sealing part and the like.
Description
Technical Field
The invention relates to semiconductor material processing equipment, in particular to a silicon carbide high-temperature oxidation furnace device.
Background
Silicon carbide as a third-generation semiconductor material has the excellent characteristics of large forbidden band width, high critical breakdown electric field, high electron mobility, high thermal conductivity and the like compared with silicon materials, is an excellent material for manufacturing high-voltage, high-temperature and radiation-resistant power semiconductor devices, and is also the third-generation semiconductor material with the best comprehensive performance, the highest commercialization degree and the most mature technology at present. Like silicon materials, silicon carbide can adopt a thermal oxidation process to grow a silicon dioxide insulating layer on the surface, the oxidation temperature based on the silicon materials is usually relatively low, but the oxidation film of the silicon carbide wafer grows very slowly at the temperature, so the oxidation process of the silicon carbide needs to be carried out at a higher temperature, which puts higher requirements on the sealing structure of the furnace door of the oxidation furnace for growing the oxidation film of the silicon carbide wafer, and mainly reduces the sealing reliability and the service life of a sealing ring in a high-temperature environment.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the silicon carbide high-temperature oxidation furnace device which is simple and reliable in structure, is beneficial to reducing the working temperature of a sealing part and prolonging the service life of the sealing part.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a carborundum high temperature oxidation furnace device, includes the furnace body and locates the furnace body flange on the furnace body, be equipped with the technology pipe in the furnace body, technology pipe one end is run through furnace body flange and periphery are equipped with technology pipe flange, be equipped with the quartz capsule in the technology pipe, quartz capsule one end is run through the technology pipe is and be equipped with the quartz capsule flange, the quartz capsule flange with be equipped with quartz capsule bearing flange between the technology pipe flange, the furnace body flange with be equipped with first sealing member between the technology pipe flange, the technology pipe with be equipped with the second sealing member between the technology pipe flange, the quartz capsule bearing flange with be equipped with the third sealing member between the quartz capsule flange, the furnace body flange with technology pipe flange is the liquid cooling flange.
As a further improvement of the technical scheme: the process pipe is characterized in that a flange part is arranged on the periphery of the process pipe, a first heat conduction pad is arranged between one end face of the flange part and the furnace body flange, and a second heat conduction pad is arranged between the other end face of the flange part and the process pipe flange.
As a further improvement of the above technical solution: the first heat conducting pad is a carbon fiber compression pad.
As a further improvement of the above technical solution: the second heat conducting pad is a graphite pad.
As a further improvement of the above technical solution: and a liner tube is arranged between the process tube and the quartz tube, and one end face, far away from the quartz tube flange, of the quartz tube bearing flange is abutted against the liner tube.
As a further improvement of the above technical solution: the quartz tube bearing flange is connected with the process tube through a connecting groove, a gap is formed between the liner tube and the process tube to form an exhaust channel, the inside of the quartz tube is communicated with one end of the exhaust channel, a communicating groove is formed in the end face, abutted against the liner tube, of the quartz tube bearing flange, the other end of the exhaust channel is in butt joint with the communicating groove, and an exhaust joint communicated with the communicating groove is arranged on the outer peripheral surface of the quartz tube bearing flange.
As a further improvement of the above technical solution: the furnace body flange with technology pipe flange fixed connection, the quartz capsule bears the flange and is close to a terminal surface of quartz capsule flange and is equipped with and bears the flange pad, bear the flange pad and pass through fastener fixed connection with technology pipe flange.
As a further improvement of the above technical solution: and a heat-preservation carbon felt is filled between the furnace body and the process pipe.
Compared with the prior art, the invention has the advantages that: the invention discloses a silicon carbide high-temperature oxidation furnace device, wherein one end of a process tube penetrates through a furnace body flange, a process tube flange is arranged on the periphery of the process tube, a quartz tube is arranged in the process tube, one end of the quartz tube penetrates through the process tube and is provided with the quartz tube flange, a quartz tube carrying flange is arranged between the quartz tube flange and the process tube flange, a first sealing element is arranged between the furnace body flange and the process tube flange and is favorable for ensuring the sealing property between the furnace body flange and the process tube flange, a second sealing element is arranged between the process tube flange and is favorable for ensuring the sealing property between the process tube flange and the process tube flange, and a third sealing element is arranged between the quartz tube carrying flange and the quartz tube flange.
Drawings
FIG. 1 is a schematic view showing the external structure of a high-temperature silicon carbide oxidizing furnace apparatus according to the present invention.
FIG. 2 is a schematic sectional view showing the structure of a high-temperature silicon carbide oxidizing furnace apparatus according to the present invention.
The reference numerals in the figures denote: 1. a quartz tube; 11. a quartz tube flange; 12. lifting the bearing platform; 2. a process tube; 21. a flange portion; 22. an exhaust passage; 3. a furnace body; 31. a furnace body flange; 32. a first coolant flow channel; 33. heat preservation carbon felt; 35. a coolant liquid inlet joint; 36. a coolant outlet joint; 4. a quartz tube carrying flange; 41. the groove is communicated; 42. an exhaust joint; 43. a load bearing flange pad; 5. a process pipe flange; 51. a second coolant flow passage; 61. a first seal member; 62. a second seal member; 63. a third seal member; 81. a first thermally conductive pad; 82. a second thermally conductive pad; 9. a liner tube.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples of the specification.
Fig. 1 to 2 show an embodiment of a silicon carbide high-temperature oxidation furnace apparatus according to the present invention, which includes a furnace body 3 and a furnace body flange 31 disposed at a lower end of the furnace body 3, a process tube 2 is disposed in the furnace body 3, and a heat preservation carbon felt 33 is filled between the process tube 2 and the furnace body 3, heat dissipation in the process tube 2 is reduced by the heat preservation carbon felt 33, one end (specifically, a lower end) of the process tube 2 penetrates through the furnace body flange 31, and a process tube flange 5 is disposed at an outer periphery of the process tube 2, a quartz tube 1 is disposed in the process tube 2, one end (specifically, a lower end) of the quartz tube 1 penetrates through the process tube 2, and is provided with a quartz tube flange 11, a quartz tube bearing flange 4 is disposed between the quartz tube flange 11 and the process tube flange 5, a first sealing member 61 is disposed between the furnace body flange 31 and the process tube flange 5, a second sealing member 62 is disposed between the process tube flange 2 and the process tube flange 5, a third sealing member 63 is disposed between the quartz tube bearing flange 4 and the quartz tube flange 11, the furnace body flange 31 and the process tube flange 5 are both liquid cooling flanges, for example, a first cooling liquid flow channel 32 and a second cooling liquid inlet connector 35 and a corresponding cooling liquid outlet connector are disposed on an outer periphery of the cooling liquid inlet connector 35.
According to the silicon carbide high-temperature oxidation furnace device, the lower end of a process pipe 2 penetrates through a furnace body flange 31, a process pipe flange 5 is arranged on the periphery of the process pipe 2, a quartz pipe 1 is arranged in the process pipe 2, the lower end of the quartz pipe 1 penetrates through the process pipe 2 and is provided with a quartz pipe flange 11, a quartz pipe bearing flange 4 is arranged between the quartz pipe flange 11 and the process pipe flange 5, a first sealing element 61 (such as a sealing ring, a sealing rubber strip and the like) is arranged between the furnace body flange 31 and the process pipe flange 5 and is favorable for ensuring the sealing property between the furnace body flange 31 and the process pipe flange 5, a second sealing element 62 (such as a sealing ring, a sealing rubber strip and the like) is arranged between the process pipe 2 and the process pipe flange 5 and is favorable for ensuring the sealing property between the process pipe 2 and the process pipe flange 5, a third sealing element 63 (such as a sealing ring, a sealing rubber strip and the like) is arranged between the quartz pipe bearing flange 4 and the quartz pipe flange 11, when the quartz pipe flange 11 moves along with the quartz pipe 1 and is tightly attached to the quartz pipe bearing flange 4 (such as the quartz pipe flange 12 drives the quartz pipe flange 1 to lift and realize the opening and closing of the silicon carbide high-temperature oxidation furnace, the quartz pipe flange 4, the sealing property between the quartz pipe flange 4 and the quartz pipe flange 11, the quartz pipe flange 31 and the process pipe flange are favorable for prolonging the service life of the furnace, and the cooling liquid cooling flanges, and the process pipe flanges 31, and the process pipe flanges are all the process pipe flanges, and the process pipe flanges are favorable for prolonging the process pipe flanges, and the service life of the process pipe flanges are all the process pipe flanges 31, and the process pipe flanges are prolonged.
Further, in the present embodiment, the process pipe 2 is provided with a flange portion 21 on the outer periphery thereof, a first heat-conducting pad 81 is provided between one end surface of the flange portion 21 and the furnace body flange 31, and a second heat-conducting pad 82 is provided between the other end surface of the flange portion 21 and the process pipe flange 5. The flange portion 21, and the first and second heat pads 81 and 82 on the upper and lower end surfaces thereof transfer heat of the process tube 2 to the quartz tube carrier flange 4 and the quartz tube flange 11, thereby improving the cooling effect.
In a preferred embodiment, the first thermal pad 81 is a carbon fiber compression pad, and the second thermal pad 82 is a graphite pad. The carbon fiber compression pad and the graphite pad not only have excellent heat conduction performance, but also can be used for buffering the compression amount of the quartz tube bearing flange 4 and the process tube flange 5 when the quartz tube flange 11 moves upwards along with the quartz tube 1, so that flexible contact is realized.
Further, in the present embodiment, a liner tube 9 is disposed between the process tube 2 and the quartz tube 1, and the upper end surface of the quartz tube bearing flange 4 abuts against the lower end of the liner tube 9. The process tube flange 5 may provide support for the process tube 2 via a flange portion 21 at the outer periphery of the process tube 2 and the quartz tube carrier flange 4 may provide support for the liner 9.
Further, in this embodiment, a gap is formed between the liner tube 9 and the process tube 2 to form the exhaust channel 22, the inside of the quartz tube 1 is communicated with the upper end of the exhaust channel 22, a communication groove 41 is formed on the upper end surface of the quartz tube bearing flange 4, the lower end of the exhaust channel 22 is butted with the communication groove 41, and an exhaust joint 42 communicated with the communication groove 41 is formed on the outer peripheral surface of the quartz tube bearing flange 4. The exhaust gas generated in the process can be discharged through the exhaust passage 22, the communication groove 41 and the exhaust joint 42 in sequence.
As a preferred embodiment, the furnace body flange 31 is fixedly connected with the process tube flange 5 (for example, fixedly connected by a fastener), a bearing flange pad 43 is arranged on one end surface of the quartz tube bearing flange 4 close to the quartz tube flange 11, and the bearing flange pad 43 is fixedly connected with the process tube flange 5 by a fastener.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (8)
1. The utility model provides a carborundum high temperature oxidation furnace device, includes furnace body (3) and locates furnace body flange (31) on furnace body (3), its characterized in that: be equipped with technology pipe (2) in furnace body (3), technology pipe (2) one end is run through furnace body flange (31) and periphery are equipped with technology pipe flange (5), be equipped with quartz capsule (1) in technology pipe (2), quartz capsule (1) one end is run through technology pipe (2) and be equipped with quartz capsule flange (11), quartz capsule flange (11) with be equipped with quartz capsule between technology pipe flange (5) and bear flange (4), furnace body flange (31) with be equipped with first sealing member (61) between technology pipe flange (5), technology pipe (2) with be equipped with second sealing member (62) between technology pipe flange (5), quartz capsule bear flange (4) with be equipped with third sealing member (63) between quartz capsule flange (11), furnace body flange (31) with technology pipe flange (5) are the liquid cooling flange.
2. The silicon carbide high-temperature oxidation furnace apparatus according to claim 1, characterized in that: the process pipe is characterized in that a flange part (21) is arranged on the periphery of the process pipe (2), a first heat conduction pad (81) is arranged between one end face of the flange part (21) and the furnace body flange (31), and a second heat conduction pad (82) is arranged between the other end face of the flange part (21) and the process pipe flange (5).
3. The silicon carbide high-temperature oxidation furnace apparatus according to claim 2, characterized in that: the first heat conducting pad (81) is a carbon fiber compression pad.
4. The silicon carbide high-temperature oxidation furnace apparatus according to claim 2, characterized in that: the second heat conducting pad (82) is a graphite pad.
5. The silicon carbide high-temperature oxidation furnace apparatus according to claim 2, characterized in that: a liner tube (9) is arranged between the process tube (2) and the quartz tube (1), and one end face, far away from the quartz tube flange (11), of the quartz tube bearing flange (4) is abutted to the liner tube (9).
6. The silicon carbide high-temperature oxidation furnace apparatus according to claim 5, characterized in that: liner pipe (9) with clearance has between technology pipe (2) is in order to form exhaust passage (22), quartz capsule (1) inside with exhaust passage (22) one end intercommunication, be equipped with on the terminal surface of quartz capsule bearing flange (4) and liner pipe (9) butt and communicate recess (41), exhaust passage (22) other end with communicate recess (41) butt joint, be equipped with on quartz capsule bearing flange (4) the outer periphery with exhaust joint (42) of intercommunication recess (41) intercommunication.
7. The silicon carbide high-temperature oxidation furnace apparatus according to any one of claims 1 to 6, characterized in that: the furnace body flange (31) is fixedly connected with the process pipe flange (5), a bearing flange pad (43) is arranged on one end face, close to the quartz pipe flange (11), of the quartz pipe bearing flange (4), and the bearing flange pad (43) is fixedly connected with the process pipe flange (5) through a fastening piece.
8. The silicon carbide high-temperature oxidation furnace apparatus according to any one of claims 1 to 6, characterized in that: and a heat-preservation carbon felt (33) is filled between the furnace body (3) and the process pipe (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110764104.XA CN115573035A (en) | 2021-07-06 | 2021-07-06 | Silicon carbide high-temperature oxidation furnace device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110764104.XA CN115573035A (en) | 2021-07-06 | 2021-07-06 | Silicon carbide high-temperature oxidation furnace device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115573035A true CN115573035A (en) | 2023-01-06 |
Family
ID=84579609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110764104.XA Pending CN115573035A (en) | 2021-07-06 | 2021-07-06 | Silicon carbide high-temperature oxidation furnace device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115573035A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142418A (en) * | 1993-11-12 | 1995-06-02 | Kokusai Electric Co Ltd | Vertical furnace for semiconductor production system |
| CN102691109A (en) * | 2012-06-19 | 2012-09-26 | 东莞市天域半导体科技有限公司 | Vertical silicon carbide high-temperature oxidation device |
| CN110736345A (en) * | 2018-07-18 | 2020-01-31 | 北京北方华创微电子装备有限公司 | Process chamber and heat treatment furnace for SiC high-temperature oxidation process |
| CN112962140A (en) * | 2021-02-01 | 2021-06-15 | 中国电子科技集团公司第四十八研究所 | Silicon carbide epitaxial furnace reaction chamber |
-
2021
- 2021-07-06 CN CN202110764104.XA patent/CN115573035A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142418A (en) * | 1993-11-12 | 1995-06-02 | Kokusai Electric Co Ltd | Vertical furnace for semiconductor production system |
| CN102691109A (en) * | 2012-06-19 | 2012-09-26 | 东莞市天域半导体科技有限公司 | Vertical silicon carbide high-temperature oxidation device |
| CN110736345A (en) * | 2018-07-18 | 2020-01-31 | 北京北方华创微电子装备有限公司 | Process chamber and heat treatment furnace for SiC high-temperature oxidation process |
| CN112962140A (en) * | 2021-02-01 | 2021-06-15 | 中国电子科技集团公司第四十八研究所 | Silicon carbide epitaxial furnace reaction chamber |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205011866U (en) | Low pressure diffusion furnace | |
| CN102316707A (en) | Have the heat sink of milli passage cooling | |
| CN115573035A (en) | Silicon carbide high-temperature oxidation furnace device | |
| CN102691109B (en) | Vertical silicon carbide high-temperature oxidation device | |
| CN107658214A (en) | A kind of low on-resistance silicon carbide MOSFET device and preparation method with floating area of double grooves | |
| CN113380672B (en) | Semiconductor heat treatment equipment | |
| WO2022160547A1 (en) | Reaction chamber of silicon carbide epitaxial furnace | |
| CN116646401B (en) | Silicon carbide heterojunction cascode MOSFET device | |
| US20230197452A1 (en) | Low-temperature processing method for improving 4h-sic/sio2 interface based on supercritical oxynitride and use thereof | |
| CN221046057U (en) | Vacuum insulation structure for semiconductor high-temperature purification equipment | |
| CN107731912B (en) | The double groove silicon carbide IGBT devices and preparation method of a kind of low on-resistance, small grid charge | |
| CN109524362A (en) | A kind of three-dimensional manometer carbon composite metal die bond material and its preparation method and application, semiconductor package | |
| CN211788998U (en) | Suspension crimping power semiconductor module | |
| CN209494923U (en) | A kind of novel axle journal sealing device | |
| CN213147419U (en) | Furnace chamber structure of silicon carbide furnace | |
| CN104167397B (en) | A kind of integrated heat dissipation IGCT | |
| CN109524304A (en) | The processing method and silicon carbide power device of carbonization silicon oxide gate dielectric fluoro plasma | |
| CN219059212U (en) | Water-cooled electrode and induction heating furnace | |
| CN219677249U (en) | Diode packaging structure | |
| CN107731893A (en) | A kind of double groove carborundum IGBT devices of low on-resistance with floating area and preparation method | |
| CN220168619U (en) | High-temperature water-cooling gate valve | |
| CN109904064A (en) | A method of improving carbonization Si direct bonding intensity | |
| CN212928224U (en) | Shielding pump capable of conveying high-temperature medium | |
| CN221057357U (en) | Electrostatic chuck and wafer etching system | |
| CN220963233U (en) | Electric and heat conducting gasket, semiconductor component and plasma processing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |