CN112962140A - Silicon carbide epitaxial furnace reaction chamber - Google Patents
Silicon carbide epitaxial furnace reaction chamber Download PDFInfo
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- CN112962140A CN112962140A CN202110137060.8A CN202110137060A CN112962140A CN 112962140 A CN112962140 A CN 112962140A CN 202110137060 A CN202110137060 A CN 202110137060A CN 112962140 A CN112962140 A CN 112962140A
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- sealing flange
- reaction chamber
- silicon carbide
- sealing
- carbide epitaxial
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a reaction chamber of a silicon carbide epitaxial furnace, which comprises a quartz tube, a first sealing flange, a second sealing flange and a sealing element, wherein a water-cooling jacket is arranged on the periphery of the quartz tube, a reaction device is arranged in the quartz tube, the first sealing flange is sleeved on the periphery of the quartz tube and is abutted against the water-cooling jacket, the second sealing flange is connected with the first sealing flange, the sealing element is clamped between the first sealing flange and the second sealing flange, a heat insulation cylinder is arranged in the second sealing flange, and the end part of the heat insulation cylinder is abutted against the reaction device. The invention has the advantages of simple and reliable structure, and is beneficial to preventing the sealing ring from high-temperature failure.
Description
Technical Field
The invention relates to semiconductor manufacturing equipment, in particular to a reaction chamber of a silicon carbide epitaxial furnace.
Background
SiC (silicon carbide) is a representative of third-generation novel wide bandgap semiconductor materials, and has very excellent physical, chemical and electrical properties, so that the SiC has very important position and good application prospect in the field of power semiconductor devices, especially in the environments of high power, high voltage and some special environments, such as high temperature, high radiation and the like. The methods for preparing the SiC epitaxial wafer are more, and the most popular method at present is a Chemical Vapor Deposition (CVD) method, namely C, Si atoms generated by cracking process gas regenerate SiC on a substrate under the environment of high temperature and low pressure.
In order to realize rapid homoepitaxy and obtain a large-thickness SiC epitaxial wafer, the reaction temperature is usually required to be as high as 1650 ℃ or so, and the pressure of the reaction atmosphere is required to be kept below 50 mbar. In order to avoid failure of a sealing ring of a sealed reaction chamber due to high temperature, a quartz tube with a water-cooling interlayer is usually arranged outside the reaction chamber of the SiC epitaxial furnace, but the water-cooling interlayer of the quartz tube is easy to break due to stress, so the water-cooling interlayer of the quartz tube cannot extend to the sealing ring, the sealing ring at the tail gas end of the quartz tube still continuously receives heat transmitted by high-temperature gas inside the reaction chamber to cause failure, once the sealing ring fails, the low-pressure environment of the reaction chamber cannot be continuously maintained, the process condition is damaged, a high-quality epitaxial wafer cannot be obtained, dangerous process gas in the reaction chamber is released to cause harm to surrounding personnel, and meanwhile, high-temperature tail gas can also bring adverse effects to components on a subsequent vacuum pipeline.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the silicon carbide epitaxial furnace reaction chamber which has a simple and reliable structure and is beneficial to preventing the sealing ring from high-temperature failure.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a carborundum epitaxial furnace reacting chamber, includes quartz capsule, first sealing flange, the sealed flange of second and sealing member, the quartz capsule periphery is equipped with water-cooling and presss from both sides the cover and the inside reaction unit that is equipped with, first sealing flange cover is located the quartz capsule periphery and with water-cooling presss from both sides the cover butt, the sealed flange of second with first sealing flange links to each other, the sealing member presss from both sides and locates between first sealing flange and the second sealing flange, be equipped with thermal-insulated section of thick bamboo in the sealed flange of second, thermal-insulated section of thick bamboo tip with the reaction unit butt.
As a further improvement of the above technical solution: an annular graphite carbon felt is arranged in the heat insulation cylinder, and the sealing element is located on the periphery of the annular graphite carbon felt.
As a further improvement of the above technical solution: the inner diameter of the annular graphite carbon felt is gradually increased from the middle part to two sides.
As a further improvement of the above technical solution: the heat insulation cylinder is a frosted quartz cylinder.
As a further improvement of the above technical solution: the periphery cover of thermal-insulated section of thick bamboo is equipped with the protection ring, protection ring tip with quartz tube tip butt.
As a further improvement of the above technical solution: and a tail gas graphite cylinder is arranged on the second sealing flange and communicated with the heat insulation cylinder.
As a further improvement of the above technical solution: and the first sealing flange and the second sealing flange are water-cooling flanges.
Compared with the prior art, the invention has the advantages that: according to the reaction chamber of the silicon carbide epitaxial furnace, the water cooling jacket on the periphery of the quartz tube is abutted and contacted with the first sealing flange, more tail gas heat can be carried away through the cooling water in the water cooling jacket, the temperature of the first sealing flange and the sealing element is reduced, the heat insulation cylinder is arranged in the second sealing flange, and the end part of the heat insulation cylinder extends to abut and contact with the reaction device in the quartz tube, so that on one hand, the graphite end cover of the reaction device can be prevented from being blown down by the tail gas, on the other hand, the high-temperature tail gas can be effectively isolated, the heat of the high-temperature tail gas is prevented from being transferred to the sealing element, the high-temperature failure of.
Drawings
FIG. 1 is a schematic view showing the structure of a reaction chamber of a silicon carbide epitaxial furnace according to the present invention.
The reference numerals in the figures denote: 1. a quartz tube; 11. a water-cooled jacket; 12. a reaction device; 2. a first sealing flange; 3. a second sealing flange; 31. a heat insulating cylinder; 4. a seal member; 5. an annular graphite carbon felt; 6. a guard ring; 7. and tail gas graphite cylinders.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples of the specification.
Fig. 1 shows an embodiment of a reaction chamber of a silicon carbide epitaxial furnace according to the present invention, which includes a quartz tube 1, a first sealing flange 2, a second sealing flange 3 and a sealing member 4, wherein a water cooling jacket 11 is disposed on an outer periphery of the quartz tube 1, a reaction device 12 is disposed inside the quartz tube 1, the first sealing flange 2 is sleeved on an outer periphery of the quartz tube 1 and abuts against the water cooling jacket 11, the second sealing flange 3 is connected with the first sealing flange 2, the sealing member 4 is clamped between the first sealing flange 2 and the second sealing flange 3, a heat insulation cylinder 31 is disposed inside the second sealing flange 3, and an end of the heat insulation cylinder 31 abuts against the reaction device 12. The seal 4 may be, for example, a conventional O-ring seal.
This silicon carbide epitaxial furnace reacting chamber, the water-cooling of 1 periphery of quartz capsule presss from both sides cover 11 and first sealing flange 2 and leans on, the contact, accessible water-cooling presss from both sides the inside cooling water of cover 11 and carries out more tail gas heat, reduce first sealing flange 2, the temperature of sealing member 4, 3 inside thermal-insulated section of thick bamboos 31 that set up of second sealing flange, thermal-insulated section of thick bamboo 31 tip (for the right-hand member in figure 1) extend to and lean on with reaction unit 12 in the quartz capsule 1, the contact, can prevent that reaction unit 12's graphite end cover from being blown down by tail gas on the one hand, on the other hand can effectively keep apart high temperature tail gas, the heat transfer of separation high temperature tail gas is to the sealing member 4 of periphery, be favorable to preventing.
Further, in the present embodiment, an annular graphite carbon felt 5 is provided in the heat insulation cylinder 31, and the sealing member 4 is located on the outer periphery of the annular graphite carbon felt 5. The graphite carbon felt has excellent heat preservation and heat insulation performance, and the annular graphite carbon felt 5 arranged on the inner side of the sealing element 4 can further reduce the heat transfer of the tail gas to the sealing element 4 on the outer side.
As a preferable technical solution, in this embodiment, the inner diameter of the annular graphite carbon felt 5 gradually increases from the middle portion to both sides. The annular graphite carbon felt 5 with the cross section structure is high in structural strength, can bear the impact of high-temperature tail gas, and can effectively reduce the heat conduction of the tail gas.
In the present embodiment, the heat insulation cylinder 31 is a ground quartz cylinder. The frosted quartz cylinder has good high temperature resistance, corrosion resistance and heat insulation performance, and can further effectively reduce the conduction of tail gas heat.
Further, in the present embodiment, the protective ring 6 is fitted around the outer periphery of the heat insulating cylinder 31, and the end of the protective ring 6 abuts on the end of the quartz tube 1. The protection ring 6 can protect the heat insulation cylinder 31, prolong the service life of the heat insulation cylinder 31, and simultaneously can be used as a second layer heat insulation structure to reduce the heat transfer of high-temperature tail gas to the second sealing flange 3. The protective ring 6 is preferably a quartz glass ring, and has high temperature resistance, corrosion resistance and good heat insulation performance.
Further, in this embodiment, the second sealing flange 3 is provided with a tail gas graphite cylinder 7, and the tail gas graphite cylinder 7 is communicated with the heat insulation cylinder 31. The tail gas graphite cylinder 7 can fully absorb the incompletely reacted process tail gas and heat by utilizing the adsorption and heat absorption performance of the tail gas graphite cylinder, so that the temperature of the tail gas is further reduced, and the influence of the discharged tail gas on a subsequent vacuum pipeline and a component is reduced.
As a preferred technical scheme, in this embodiment, the first sealing flange 2 and the second sealing flange 3 are both water-cooling flanges, and heat of the first sealing flange 2 and the second sealing flange 3 can be taken away by cooling water, so as to ensure that two sides of the sealing element 4 are at a lower temperature.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (7)
1. A silicon carbide epitaxial furnace reaction chamber is characterized in that: including quartz capsule (1), first sealing flange (2), second sealing flange (3) and sealing member (4), quartz capsule (1) periphery is equipped with water-cooling and presss from both sides cover (11) and inside and is equipped with reaction unit (12), first sealing flange (2) cover is located quartz capsule (1) periphery and with water-cooling presss from both sides cover (11) butt, second sealing flange (3) with first sealing flange (2) link to each other, sealing member (4) press from both sides and locate between first sealing flange (2) and second sealing flange (3), be equipped with heat insulating cylinder (31) in second sealing flange (3), heat insulating cylinder (31) tip with reaction unit (12) butt.
2. The silicon carbide epitaxial furnace reaction chamber of claim 1, wherein: an annular graphite carbon felt (5) is arranged in the heat insulation cylinder (31), and the sealing element (4) is located on the periphery of the annular graphite carbon felt (5).
3. The silicon carbide epitaxial furnace reaction chamber of claim 2, wherein: the inner diameter of the annular graphite carbon felt (5) is gradually increased from the middle part to two sides.
4. The silicon carbide epitaxial furnace reaction chamber of claim 1, wherein: the heat insulation cylinder (31) is a ground quartz cylinder.
5. The silicon carbide epitaxial furnace reaction chamber of any one of claims 1 to 4, wherein: the periphery of the heat insulation cylinder (31) is sleeved with a protection ring (6), and the end part of the protection ring (6) is abutted to the end part of the quartz tube (1).
6. The silicon carbide epitaxial furnace reaction chamber of any one of claims 1 to 4, wherein: and a tail gas graphite cylinder (7) is arranged on the second sealing flange (3), and the tail gas graphite cylinder (7) is communicated with the heat insulation cylinder (31).
7. The silicon carbide epitaxial furnace reaction chamber of any one of claims 1 to 4, wherein: the first sealing flange (2) and the second sealing flange (3) are both water-cooling flanges.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110137060.8A CN112962140A (en) | 2021-02-01 | 2021-02-01 | Silicon carbide epitaxial furnace reaction chamber |
| PCT/CN2021/098529 WO2022160547A1 (en) | 2021-02-01 | 2021-06-07 | Reaction chamber of silicon carbide epitaxial furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110137060.8A CN112962140A (en) | 2021-02-01 | 2021-02-01 | Silicon carbide epitaxial furnace reaction chamber |
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| CN112962140A true CN112962140A (en) | 2021-06-15 |
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| CN202110137060.8A Pending CN112962140A (en) | 2021-02-01 | 2021-02-01 | Silicon carbide epitaxial furnace reaction chamber |
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| CN (1) | CN112962140A (en) |
| WO (1) | WO2022160547A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115573035A (en) * | 2021-07-06 | 2023-01-06 | 中国电子科技集团公司第四十八研究所 | Silicon carbide high-temperature oxidation furnace device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115745393A (en) * | 2022-11-30 | 2023-03-07 | 武汉光盛通光电科技有限公司 | Rotatable heating's tombarthite halide gasification conveyor |
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| JPH06188204A (en) * | 1992-12-17 | 1994-07-08 | Kokusai Electric Co Ltd | Semiconductor substrate reaction furnace |
| CN103628140A (en) * | 2013-10-09 | 2014-03-12 | 东莞市天域半导体科技有限公司 | Dual sealing structure for ultra high temperature double-layer water cooling quartz tube vacuum chamber |
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| CN111290071A (en) * | 2020-01-22 | 2020-06-16 | 华中科技大学 | Preparation method of semiconductor core optical fiber |
| CN212051727U (en) * | 2020-03-27 | 2020-12-01 | 无锡松煜科技有限公司 | Diffusion furnace process chamber furnace mouth structure |
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| DE19919326A1 (en) * | 1999-04-28 | 2000-11-02 | Leybold Systems Gmbh | Chemical vapor coating chamber |
| DE10055033A1 (en) * | 2000-11-07 | 2002-05-08 | Aixtron Ag | Device for depositing crystalline layers onto crystalline substrates has a space between a reactor housing wall and a graphite tube filled with a graphite foam notched collar |
| CN2730890Y (en) * | 2004-09-22 | 2005-10-05 | 中国科学院半导体研究所 | Horizontal ion implantation silicon carbide high-temp. annealing device |
| CN109338333B (en) * | 2018-11-30 | 2020-08-14 | 湖南红太阳光电科技有限公司 | Tubular LPCVD vacuum reaction chamber |
| CN110331439A (en) * | 2019-07-22 | 2019-10-15 | 杭州弘晟智能科技有限公司 | A kind of heating device for silicon carbide epitaxy |
| CN111551037A (en) * | 2020-06-15 | 2020-08-18 | 青岛赛瑞达电子装备股份有限公司 | Process pipe with water cooling at two ends |
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2021
- 2021-02-01 CN CN202110137060.8A patent/CN112962140A/en active Pending
- 2021-06-07 WO PCT/CN2021/098529 patent/WO2022160547A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06188204A (en) * | 1992-12-17 | 1994-07-08 | Kokusai Electric Co Ltd | Semiconductor substrate reaction furnace |
| CN103628140A (en) * | 2013-10-09 | 2014-03-12 | 东莞市天域半导体科技有限公司 | Dual sealing structure for ultra high temperature double-layer water cooling quartz tube vacuum chamber |
| CN207038544U (en) * | 2017-05-26 | 2018-02-23 | 深圳市捷佳伟创新能源装备股份有限公司 | A kind of low pressure diffusion furnace fire door heat insulation structural |
| CN111290071A (en) * | 2020-01-22 | 2020-06-16 | 华中科技大学 | Preparation method of semiconductor core optical fiber |
| CN212051727U (en) * | 2020-03-27 | 2020-12-01 | 无锡松煜科技有限公司 | Diffusion furnace process chamber furnace mouth structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115573035A (en) * | 2021-07-06 | 2023-01-06 | 中国电子科技集团公司第四十八研究所 | Silicon carbide high-temperature oxidation furnace device |
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| WO2022160547A1 (en) | 2022-08-04 |
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Application publication date: 20210615 |
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