CN115567004A - Three-way Doherty radio-frequency power amplifier - Google Patents
Three-way Doherty radio-frequency power amplifier Download PDFInfo
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H03F1/42—Modifications of amplifiers to extend the bandwidth
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Abstract
The invention discloses a three-way Doherty radio-frequency power amplifier, which comprises a power divider, a main amplifier, an efficiency peak amplifier, a linear peak amplifier, a phase-shifting network and a corresponding output matching network, wherein the power divider is used for dividing a power signal into a plurality of paths; the output matching network comprises a video bandwidth enhancing network and a combined impedance matching network, wherein the output end of the main amplifier is connected with the output end of the efficiency peak amplifier through a first pi-type CLC network in the combined impedance matching network, and the output end of the efficiency peak amplifier is connected with the output end of the linear peak amplifier through a second pi-type CLC network; the video bandwidth enhancing network comprises a first inductor and a first capacitor which are sequentially connected in series between the output end of the main amplifier and the ground, wherein the first inductor and the output capacitor of the main amplifier form a resonant network which is at least used for compensating the corresponding matching capacitor in the combined impedance matching network. The invention solves the realizability problem of the three-way Doherty radio-frequency power amplifier and can improve the digital predistortion friendliness of the three-way Doherty radio-frequency power amplifier.
Description
Technical Field
The invention relates to a three-way Doherty radio-frequency power amplifier, belonging to the field of wireless communication.
Background
The circuit structure of a conventional three-way Doherty radio-frequency power amplifier is shown in fig. 1, two 90-degree transmission lines in a combiner are realized by a pi-type CLC network, and a drain output capacitor C of each amplifier ds_M 、
And
are absorbed into the combiner. Specifically, the main amplifier and the efficiency peak amplifier are connected through C ds_M 、C m 、L s1 And section (a)
To form the desired transmission line, and a pass-through section between the efficiency peaking amplifier and the linear peaking amplifier
C p1 、L s2 、
And C p2 To form the desired transmission line.
However, as 5G evolves, the defects of the above architecture in practical applications gradually emerge, and specifically include the following aspects: first, integrated Doherty amplifiers have been used to implement amplifiers with moderate output power, e.g., 10-50W, at frequencies of 2-4GHz. However, in future applications such as micro-station, pico-station, femto-station, etc. in MIMO systems, the power amplifier needs to output a smaller average power, such as 2W, at a higher frequency, such as 3.5 GHz. When the required output power is reduced, the size of the transistors also needs to be reduced to maintain suitable efficiency, especially for the main amplifier in 3-way applicationsIs further reduced, the optimum impedance presented to the transistor will rise. For example, using a 28V LDMOS transistor to output a 2W power at 3.5GHz, the optimal impedance Z at saturation is low_m About 150 ohms, from which L can be calculated s1 The required inductance value is about 7nH, where realizability is a problem. On the one hand, if a large inductor is integrated on a semiconductor chip through a spiral inductor, the quality factor of the inductor is poor, and especially when the inductor is integrated on a silicon substrate, the efficiency is seriously deteriorated; on the other hand, the feasibility of using the bond wire completely to realize a high inductance value is also poor, and the hidden danger of coupling oscillation is also brought. Second, the capacitance values required for a pi-type CLC network. In particular, the capacitance value required by the main amplifier may be less than the actual output capacitance of the main amplifier itself. For example, using a 28V LDMOS transistor to obtain a 2W output power at 3.5GHz, the output capacitance of the transistor itself is 0.43pF, whereas the capacitance required to form a pi CLC network is 0.29pF, which again introduces realizability problems. Finally, digital predistortion techniques are commonly used to linearize power amplifiers in the 5G scenario. The radio frequency bandwidth of the original signal is already over 200MHz, and the actual signal bandwidth after digital predistortion can easily exceed 600MHz, which presents a very high challenge to the digital predistortion friendliness of the power amplifier. In fig. 1, a bias circuit of the amplifier is implemented by using a section of quarter-wavelength microstrip line, the structure can play a good open-circuit effect on radio frequency, and the feed effect is realized on the basis of not influencing matching, but the baseband presents a very large inductance, so that a low-frequency resonance structure can be formed on an output capacitor of the amplifier, and the digital predistortion correction of a broadband modulation signal is not facilitated.
Disclosure of Invention
The invention mainly aims to provide a three-way Doherty radio-frequency power amplifier to solve the problems in the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
the embodiment of the invention provides a three-way Doherty radio-frequency power amplifier, which comprises: the power divider, the main amplifier, the efficiency peak amplifier, the linear peak amplifier, the phase shift network and the corresponding output matching network; an input signal to be amplified is respectively input into a main amplifier, an efficiency peak amplifier and a linear peak amplifier through the power divider and finally flows to load impedance, the input end of the main amplifier is electrically connected with the first output end of the power divider, the input end of the efficiency peak amplifier is electrically connected with the second output end of the power divider through a first phase-shifting network, and the input end of the linear peak amplifier is electrically connected with the third output end of the power divider through a second phase-shifting network; the output matching network includes a video bandwidth enhancement network and a combining impedance matching network, wherein,
the combined impedance matching network comprises a first pi-type CLC network and a second pi-type CLC network, the output end of the main amplifier is connected with the output end of the efficiency peak amplifier through the first pi-type CLC network, and the output end of the efficiency peak amplifier is connected with the output end of the linear peak amplifier through the second pi-type CLC network;
the video bandwidth enhancement network comprises a first inductor and a first capacitor which are sequentially connected in series between the output end of the main amplifier and the ground, the first inductor and the output capacitor of the main amplifier form a resonant network, and the resonant network is at least used for compensating the corresponding matching capacitor in the combined impedance matching network.
Further, the first pi-type CLC network includes a first inductor, a first capacitor, a second inductor, an output capacitor of the main amplifier, an output capacitor of the efficiency peaking amplifier, and a portion of the second capacitor, and the second pi-type CLC network includes the output capacitor of the efficiency peaking amplifier, another portion of the second capacitor, a third inductor, an output capacitor of the linear peaking amplifier, and a third capacitor; wherein,
the second inductor is connected between the output end of the main amplifier and the output end of the efficiency peak amplifier, the third inductor is connected between the output end of the efficiency peak amplifier and the output end of the linear peak amplifier, the output capacitor of the main amplifier and the output capacitor of the efficiency peak amplifier are connected in parallel on two sides of the second inductor, the output capacitor of the efficiency peak amplifier and the output capacitor of the linear peak amplifier are connected in parallel on two sides of the third inductor, and the second capacitor and the third capacitor are connected in parallel on two sides of the third inductor.
Furthermore, the matching capacitance required for forming the first pi-type CLC network is smaller than the output capacitance of the main amplifier, and the resonant network is used for compensating the difference between the output capacitance of the main amplifier and the matching capacitance of the first pi-type CLC network.
Further, the main amplifier, the efficiency peaking amplifier and the linear peaking amplifier each include an LDMOS or GaN transistor, but are not limited thereto.
Further, the first inductor and the first capacitor are sequentially connected in series between the drain of the main amplifier transistor and the ground.
Further, the second inductor and the third inductor each include an equivalent inductor of the corresponding bonding wire and an equivalent inductor of the corresponding surface-mounted inductor element.
Further, drain feed currents of the main amplifier, the efficiency peak amplifier and the linear peak amplifier transistor are provided through a double bias network, the double bias network comprises a first quarter-wavelength microstrip line and a second quarter-wavelength microstrip line, and the first quarter-wavelength microstrip line and the second quarter-wavelength microstrip line are arranged in parallel; wherein,
one end of the first quarter-wavelength microstrip line is electrically connected with a power supply voltage and is grounded through a first decoupling capacitor, the other end of the first quarter-wavelength microstrip line is electrically connected with one end of the second quarter-wavelength microstrip line, and the other end of the second quarter-wavelength microstrip line is grounded through a second decoupling capacitor.
Further, a node between the first quarter-wavelength microstrip line and the second quarter-wavelength microstrip line is electrically connected with the drains of the main amplifier transistor, the efficiency peak amplifier transistor and the linear peak amplifier transistor directly or indirectly through a first LC network, and is electrically connected with a load impedance through a second LC network.
The embodiment of the invention also provides an electronic device which comprises the three-way Doherty radio-frequency power amplifier, wherein the power divider, the main amplifier, the efficiency peak amplifier and the linear peak amplifier are integrated to form a single-chip microwave integrated circuit, the single-chip microwave integrated circuit is packaged in a QFN packaging shell, and the QFN packaging shell is arranged on the printed circuit board and is matched with corresponding elements on the printed circuit board.
An embodiment of the present invention further provides another device structure, which includes the three-way Doherty rf power amplifier described above, wherein the power divider, the main amplifier, the efficiency peaking amplifier, and the linear peaking amplifier are integrally configured as a monolithic microwave integrated circuit, and the monolithic microwave integrated circuit is configured on the LGA substrate and is matched with a corresponding surface mounted component.
Compared with the prior art, the three-way Doherty radio-frequency power amplifier provided by the embodiment of the invention has at least the following beneficial effects:
1) The problem of realizability of three Doherty radio-frequency power amplifiers is solved through a difference part of an output capacitor of an inductance compensation main amplifier in a video bandwidth enhancement network and a matching capacitor required by a pi-type CLC network.
2) The low-frequency response resonance point of the three-way Doherty radio-frequency power amplifier is increased through the grounding large capacitor in the video bandwidth enhancement network, the baseband impedance is optimized, and the video bandwidth of the Doherty radio-frequency power amplifier is effectively enhanced.
3) The large inductance in the pi-type CLC network is realized through the bonding wire inductance and the surface-mounted inductance element, and the inductance loss is effectively reduced on the basis of realizability.
4) The double-bias network formed by two sections of quarter-wavelength microstrip lines connected in parallel is used for providing drain feed current for the Doherty radio-frequency power amplifier, so that the low-frequency response resonance point of the Doherty radio-frequency power amplifier is increased, the impedance matching performance of a baseband is improved, and the digital predistortion friendliness of the Doherty radio-frequency power amplifier is further improved.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings of the present invention will be briefly described below, and those skilled in the art can also obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a circuit diagram of a prior art three-way Doherty rf power amplifier;
fig. 2 is a circuit diagram of a three-way Doherty rf power amplifier in an embodiment of the present invention;
fig. 3 is a schematic diagram of a device structure of a three-way Doherty rf power amplifier in an embodiment of the present invention;
fig. 4 is a schematic diagram of another device structure of a three-way Doherty rf power amplifier in an embodiment of the invention.
Detailed Description
In view of the defects of the prior art, the inventor of the present invention has long studied and practiced to provide the technical solution of the present invention, and the technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "middle", "upper", "lower", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
Referring to fig. 2, a three-way Doherty rf power amplifier according to an embodiment of the present invention includes: a power splitter 120, a main amplifier 103, an efficiency peaking amplifier 104, a linear peaking amplifier 105, a phase shifting network and corresponding output matching network; the input signal 10 to be amplified is inputted into the main amplifier 103, the efficiency peak amplifier 104 and the linear peak amplifier 105 through the power divider 120, respectively, and finally flows to the load impedance R L The input of the main amplifier 103 is electrically connected to the first output a of the power divider 120, the input of the efficiency peaking amplifier 104 is electrically connected to the second output b of the power divider 120 via a first phase shifting network, and the input of the linear peaking amplifier 105 is electrically connected to the third output c of the power divider 120 via a second phase shifting network.
The output matching network comprises a video bandwidth enhancement network and a combining impedance matching network, wherein the combining impedance matching network comprises a first pi-type CLC network and a second pi-type CLC network, the output end of the main amplifier 103 is connected with the output end of the efficiency peak amplifier 104 through the first pi-type CLC network, and the output end of the efficiency peak amplifier 104 is connected with the output end of the linear peak amplifier 105 through the second pi-type CLC network. The video bandwidth enhancement network comprises a first inductor L sequentially connected in series between the output end of the main amplifier 103 and the ground p And a first capacitor C p First inductance L p And the output capacitor C of the main amplifier 103 ds_M And forming a resonant network, wherein the resonant network is at least used for compensating the corresponding matching capacitor in the combining impedance matching network.
And is connected to the first inductor L p A first capacitor C connected in series p Is used to realize the function of radio frequency grounding, and C is used simultaneously p The magnitude of (a) is very important for the response of the three-way Doherty radio-frequency power amplifier at low frequency, and generally a larger capacitor is needed to realize grounding so as to boost the three-way Doherty radio-frequency power amplifierThe resonance point of the low-frequency response of the frequency power amplifier can optimize the baseband impedance of the three-way Doherty radio-frequency power amplifier and enhance the video bandwidth of the three-way Doherty radio-frequency power amplifier.
Specifically, the first phase shifting network comprises an inductor L inl And is connected in parallel to the inductor L in1 Capacitors C on both sides in1 The second phase-shifting network comprises an inductor L in2 And L in3 And connected in parallel to the inductor L in2 Capacitors C on both sides in2 And is connected in parallel to the inductor L in3 Capacitors C on both sides in3 。
Furthermore, the first pi-type CLC network comprises a first inductor L p A first capacitor C p A second inductor L s1 An output capacitor C of the main amplifier 103 ds_M Output capacitance of efficiency peaking amplifier 104
And a second capacitor C p1 The second pi-type CLC network includes the output capacitance of the efficiency peaking amplifier 104
A second capacitor C p1 Another part of, a third inductance L s2 Output capacitance of linear peak amplifier 105
And a third capacitance C p2 。
Wherein the second inductance L s1 A third inductor L connected between the output of the main amplifier 103 and the output of the efficiency peaking amplifier 104 s2 An output capacitor C of the main amplifier 103 connected between the output of the efficiency peaking amplifier 104 and the output of the linear peaking amplifier 105 ds_M Output capacitance of efficiency peaking amplifier 104
Is connected in parallel with the second inductor L s1 Two-sided, output capacitance of efficiency peaking amplifier 104
Output capacitance of linear peak amplifier
Is connected in parallel with the third inductor L s2 Two sides, a second capacitor C p1 And a third capacitance C p2 Is also connected in parallel to the third inductor L s2 Two sides.
The first pi-type CLC network is used for realizing a first section of quarter-wavelength transmission line of a combiner in the three-way Doherty radio-frequency power amplifier, and the second pi-type CLC network is used for realizing a second section of quarter-wavelength transmission line of the combiner.
Further, the matching capacitor C of the first pi-type CLC network TL1 Smaller than the output capacitance C of the main amplifier 103 ds_M And the resonant network is used for compensating the output capacitor C of the main amplifier 103 ds_M Matching capacitor C with first pi-type CLC network TL1 The difference of (a).
In particular, due to the matching capacitance C required to form the first pi-type CLC network TL1 Smaller than the output capacitance C of the main amplifier 103 ds_M Therefore, there is a problem of realizability for the design of the combiner, and thus the present embodiment passes through the first inductor L p To compensate the output capacitance C of the main amplifier 103 ds_M And a matching capacitor C TL1 The difference part of (a).
Wherein, the first inductance L p Can be determined by the following formula:
further, the main amplifier 103, the efficiency peak amplifier 104 and the linear peak amplifier 105 are all implemented by transistors, which may be LDMOS transistors or GaN transistors, for example, and the first inductor L p And a first capacitor C p In turn connected in series between the drain of the main amplifier transistor and ground.
Further, the second inductor L s1 And a third inductance L s2 Each including a corresponding bonding wireAnd the equivalent inductance of the corresponding surface-mounted inductance component.
Second inductance L required in low power applications s1 A third inductor L s2 The larger the inductance value, the more difficult the realization, or the great loss will be produced. Therefore, the present invention provides a hybrid approach to achieve low loss large inductance. On one hand, internally, the output end of each amplifier in the three-way Doherty rf power amplifier is connected to an external port, such as a pad of an LGA substrate or a pin of a QFN package housing, by using one or more bonding wires between semiconductor chips, and these bonding wires may be equivalent to an inductor in terms of electrical performance, i.e. may be considered as a second inductor L s1 Or a third inductance L s2 A small fraction of (a). On the other hand, the second inductor L is formed by using a surface-mounted inductor element or a microstrip line having a high Q value on an external portion such as an LGA substrate or a printed circuit board s1 Or the third inductance L s2 Thus, the required large inductance is achieved and the high losses of the on-chip integrated spiral inductors are avoided.
In addition, the first inductance L p It can also be realized by bond wire inductance in combination with surface mounted inductive elements.
Further, the drain feed currents of the main amplifier 103, the efficiency peak amplifier 104 and the linear peak amplifier 105 are provided by a dual bias network comprising a first quarter-wavelength microstrip line TL1 and a second quarter-wavelength microstrip line TL2, and the first quarter-wavelength microstrip line TL1 is arranged in parallel with the second quarter-wavelength microstrip line TL 2.
One end of the first quarter-wavelength microstrip line TL1 is electrically connected to the power supply voltage VDD1 and passes through the first decoupling capacitor C decoup1 The other end of the second quarter-wavelength microstrip line TL2 is electrically connected with one end of a second decoupling capacitor C, and the other end of the second quarter-wavelength microstrip line TL2 is grounded decoup2 And (4) grounding.
Further, a node between the first quarter-wavelength microstrip line TL1 and the second quarter-wavelength microstrip line TL2 is electrically connected, directly or indirectly, to the drains of the main amplifier transistor, the efficiency peak amplifier transistor, and the linear peak amplifier transistor via the first LC network, and is also electrically connected to the load impedance via the second LC network.
Wherein the first LC network comprises an inductance L 1 And a capacitor C 1 Inductance L 1 A capacitor C connected between a node between the first and second quarter-wavelength microstrip lines TL1 and TL2 and the combining point 11 1 One terminal and an inductor L 1 And the other end of the connecting rod is grounded. The second LC network comprises a capacitor C 2 And an inductance L 2 Capacitor C 2 A node connected between the first and second quarter-wavelength microstrip lines TL1 and TL2 and a load R L Between, inductance L 2 One terminal and a capacitor C 2 And the other end of the connecting rod is grounded.
Specifically, after the first quarter-wavelength microstrip line TL1 and the second quarter-wavelength microstrip line TL2 are arranged in parallel, the corresponding inductance value is smaller than that of a bias network formed by a conventional section of quarter-wavelength microstrip line, so that the baseband impedance can be optimized, and the low-frequency response resonance point of the three-way Doherty radio-frequency power amplifier is increased.
Further, the embodiment of the present invention further provides a specific design scheme of a three-way Doherty rf power amplifier with a frequency of 3.5GHz, wherein the main amplifier 103, the efficiency peaking amplifier 104 and the linear peaking amplifier 105 are all implemented by LDMOS transistors. The total output power of the three-way Doherty radio-frequency power amplifier is 12W, the output capacitance of the main amplifier 103 is 0.76pF, and the optimal load is 130 Ω, so that it can be determined that the characteristic impedances of the first quarter-wavelength microstrip line TL1 and the second quarter-wavelength microstrip line TL2 in the combined impedance matching network are 130 Ω and 44 Ω, respectively. The matching capacitance C required in the first pi-CLC network can be calculated TL1 0.35pF, so by the following equation:
the first inductance L can be obtained p The inductance value of (2) is 5.1nH, and the circuit is combinedOther elements Ls1, ls2, cp1, and Cp2 in the impedance matching network may be determined as 10.36nH, 3.45nH, 0.85pF, and 0.23pF. The determination of the corresponding device parameters in this design is well known to those skilled in the art and will not be described in detail.
Further, an embodiment of the present invention further provides an electronic device, and in particular, a layout structure of a three-way Doherty rf power amplifier, which includes: a monolithic microwave integrated circuit 102 integrated with a power splitter 120, a main amplifier 103, an efficiency peaking amplifier 104 and a linear peaking amplifier 105, the monolithic microwave integrated circuit 102 being packaged in a QFN package housing 101, the QFN package housing 101 being disposed on a printed circuit board 100 and cooperating with corresponding surface mount components on the printed circuit board 100.
Specifically, referring to fig. 3, a Monolithic Microwave Integrated Circuit (MMIC) 102 based on LDMOS or GaN technology is packaged in a QFN package 101, and is matched with matching elements on a Printed Circuit Board (PCB) 100 at the upper periphery to form a three-way Doherty rf power amplifier. On the monolithic microwave integrated circuit 102 are integrated a power splitter 120, a main amplifier 103, an efficiency peak amplifier 104 and a linear peak amplifier 105. In addition, the monolithic microwave integrated circuit 102 further includes capacitive elements 108A and 108B for implementing a second capacitor C p1 And a third capacitance C p2 These capacitances can be realized by metal-oxide-metal capacitances or fringe capacitances. According to practical situations, the implementation on the printed circuit board 100 through corresponding surface-mounted components and microstrip lines can be selected.
With continued reference to fig. 3, thin lines are used to indicate traces on the printed circuit board 100, the QFN package 101 and the monolithic microwave integrated circuit 102, and thick lines are used to indicate metal bonding wires. The single line drawn may represent a single bond wire or a plurality of bond wires connected in parallel. Wherein, the bonding wire is provided with pads 109A,109B and 109C on the monolithic microwave integrated circuit 102, and the bonding wire is provided with pads 111A,111B,111C,111D,111E and 111F on the QFN package shell 101.
And as previously mentioned, the second inductance L s1 On the printed circuit board 1 based on realizability factors00 is realized by a mixed mode of a surface-mounted element 112, a bonding wire 110B and a bonding wire 110C, and a third inductor L s2 The surface mounting is realized by mounting an inductance element 113, a bonding wire 110D and a bonding wire 110E, and the first inductance L is also realized p By surface mounting the inductive element 106 and the bond wires 110A.
In addition, the inductance L 1 Capacitor C 1 Inductor L 2 Capacitor C 2 And the first quarter-wavelength microstrip line TL1 and the second quarter-wavelength microstrip line TL2 of the dual-bias network are also implemented on the printed circuit board 100 by corresponding surface-mounted elements.
It should be noted that the inductance L in the phase shift network in1 、L in2 、L in3 Capacitor C in1 、C in2 、C in3 The microwave integrated circuit can be integrated on the monolithic microwave integrated circuit 102, and can also be implemented on the printed circuit board 100 by corresponding surface-mounted components and microstrip lines, which are not shown in fig. 3.
Further, another electronic device is provided in an embodiment of the present invention, which includes: a monolithic microwave integrated circuit 102 integrated with a power splitter 120, a main amplifier 103, an efficiency peaking amplifier 104 and a linear peaking amplifier 105, the monolithic microwave integrated circuit 102 being disposed on an LGA substrate 121 and cooperating with corresponding surface mount components.
Specifically, referring to fig. 4, a monolithic microwave integrated circuit 102 based on LDMOS or GaN process is packaged in an LGA substrate 121, and a trace or pad is etched on the LGA substrate 121 and a corresponding surface-mounted device is placed to form a three-way Doherty rf power amplifier. The main difference between this device structure and the device structure in fig. 3 is that the corresponding surface mount components are integrated on the LGA substrate 121, and the integration level is further improved. In a specific implementation, due to the higher flexibility of the LGA substrate 121, for example, the first inductor L p Second inductance L s1 And a third inductance L s2 The microstrip line structure can be introduced for replacement according to actual conditions.
The above description is only an example of the present invention, but the scope of the present invention is not limited thereto, and any modifications or substitutions that can be understood by those skilled in the art within the technical scope of the present invention should be included in the scope of the present invention.
Claims (10)
1. A three-way Doherty radio frequency power amplifier, comprising: the power divider, the main amplifier, the efficiency peak amplifier, the linear peak amplifier, the phase shift network and the corresponding output matching network; the input signal to be amplified is respectively input into the main amplifier, the efficiency peak amplifier and the linear peak amplifier through the power divider, and finally flows to the load impedance; the input end of the main amplifier is electrically connected with the first output end of the power divider, the input end of the efficiency peak amplifier is electrically connected with the second output end of the power divider through a first phase-shifting network, and the input end of the linear peak amplifier is electrically connected with the third output end of the power divider through a second phase-shifting network; the output matching network comprises a video bandwidth enhancement network and a combining impedance matching network; wherein,
the combined impedance matching network comprises a first pi-type CLC network and a second pi-type CLC network, the output end of the main amplifier is connected with the output end of the efficiency peak amplifier through the first pi-type CLC network, and the output end of the efficiency peak amplifier is connected with the output end of the linear peak amplifier through the second pi-type CLC network;
the video bandwidth enhancement network comprises a first inductor and a first capacitor which are sequentially connected in series between the output end of the main amplifier and the ground, the first inductor and the output capacitor of the main amplifier form a resonant network, and the resonant network is at least used for compensating the corresponding matching capacitor in the combined impedance matching network.
2. The three-way Doherty radio frequency power amplifier of claim 1, wherein: the first pi-type CLC network comprises a first inductor, a first capacitor, a second inductor, an output capacitor of the main amplifier, an output capacitor of the efficiency peak amplifier and one part of a second capacitor, and the second pi-type CLC network comprises the output capacitor of the efficiency peak amplifier, the other part of the second capacitor, a third inductor, the output capacitor of the linear peak amplifier and a third capacitor; wherein,
the second inductor is connected between the output end of the main amplifier and the output end of the efficiency peak amplifier, the third inductor is connected between the output end of the efficiency peak amplifier and the output end of the linear peak amplifier, the output capacitor of the main amplifier and the output capacitor of the efficiency peak amplifier are connected in parallel on two sides of the second inductor, the output capacitor of the efficiency peak amplifier and the output capacitor of the linear peak amplifier are connected in parallel on two sides of the third inductor, and the second capacitor and the third capacitor are connected in parallel on two sides of the third inductor.
3. The three-way Doherty radio frequency power amplifier of claim 2, wherein: the matching capacitance of the first pi-type CLC network is smaller than the output capacitance of the main amplifier, and the resonance network is used for compensating the difference between the output capacitance of the main amplifier and the matching capacitance of the first pi-type CLC network.
4. The three-way Doherty radio-frequency power amplifier of claim 1, wherein: the main amplifier, the efficiency peaking amplifier and the linear peaking amplifier each include LDMOS or GaN transistors.
5. The three-way Doherty radio-frequency power amplifier of claim 4, wherein: the first inductor and the first capacitor are sequentially connected between the drain electrode of the main amplifier transistor and the ground in series.
6. The three-way Doherty radio-frequency power amplifier of claim 2, wherein: the second inductor and the third inductor respectively comprise equivalent inductors of corresponding bonding wires and equivalent inductors of corresponding surface-mounted inductor elements.
7. The three-way Doherty radio-frequency power amplifier of claim 1, wherein: the drain feed currents of the main amplifier, the efficiency peak amplifier and the linear peak amplifier transistor are provided through a double bias network, the double bias network comprises a first quarter-wavelength microstrip line and a second quarter-wavelength microstrip line, and the first quarter-wavelength microstrip line and the second quarter-wavelength microstrip line are arranged in parallel; wherein,
one end of the first quarter-wavelength microstrip line is electrically connected with a power supply voltage and is grounded through a first decoupling capacitor, the other end of the first quarter-wavelength microstrip line is electrically connected with one end of the second quarter-wavelength microstrip line, and the other end of the second quarter-wavelength microstrip line is grounded through a second decoupling capacitor.
8. The three-way Doherty radio-frequency power amplifier of claim 7, wherein: and a node between the first quarter-wavelength microstrip line and the second quarter-wavelength microstrip line is directly or indirectly electrically connected with the drains of the main amplifier transistor, the efficiency peak amplifier transistor and the linear peak amplifier transistor through a first LC network, and is simultaneously electrically connected with a load impedance through a second LC network.
9. An electronic device comprising the three-way Doherty radio-frequency power amplifier of any of claims 1-8, wherein the power splitter, the main amplifier, the efficiency peaking amplifier and the linearity peaking amplifier are integrally provided as a monolithic microwave integrated circuit, the monolithic microwave integrated circuit being packaged in a QFN package housing, the QFN package housing being provided on a printed circuit board and cooperating with corresponding components on the printed circuit board.
10. An electronic device comprising a three-way Doherty rf power amplifier as claimed in any one of claims 1-8, wherein the power divider, the main amplifier, the efficiency peaking amplifier and the linearity peaking amplifier are integrally provided as a monolithic microwave integrated circuit, which is provided on an LGA substrate and cooperates with corresponding surface mounted components.
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