CN115558904A - 一种空间用防静电复合原子氧防护涂层 - Google Patents
一种空间用防静电复合原子氧防护涂层 Download PDFInfo
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000011253 protective coating Substances 0.000 title claims abstract description 31
- 239000002131 composite material Substances 0.000 title claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 28
- 238000005516 engineering process Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 14
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 230000001681 protective effect Effects 0.000 abstract description 6
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种空间用防静电复合原子氧防护涂层，是一种既能提升原子氧防护性能，又提供了一种能够适应低轨道空间环境的防静电薄膜，能够满足低轨、超低轨、长寿命卫星防静电原子氧防护性能需求。包括在有机基底材料上由下至上设置的硅氧烷防护涂层、氧化铝涂层、SiOx原子氧防护涂层和氧化铟锡防静电涂层。硅氧烷防护涂层利用等离子体增强化学气相沉积技术制备，厚度为50～600nm。氧化铝涂层利用等离子体增强原子层沉积技术制备，厚度为1～200nm。SiOx原子氧防护涂层利用等离子体增强化学气相沉积技术制备，厚度为100～300nm。氧化铟锡防静电涂层利用RF磁控溅射法制备。
Description
技术领域
本发明涉及航天器空间环境效应防护技术领域，具体涉及一种空间用防静电复合原子氧防护涂层。
背景技术
原子氧是低地球轨道残余大气的主要成分，对低轨道卫星表面材料产生严重的氧化剥蚀作用，导致材料性能出现衰退甚至完全失效，是卫星表面材料性能退化的主要因素之一。随着研制或正在运行的低轨道卫星越来越多，运行轨道低(180km～700km)，在轨时间长(5～15年)。低轨道卫星上广泛使用的有机结构材料、热控薄膜材料、碳纤维板等极易受到原子氧剥蚀，原子氧防护技术是保证低轨道卫星在轨性能和寿命的必要措施。而现有的防护涂层已经无法经受高累积通量原子氧剥蚀，因此对高性能原子氧防护涂层提出迫切需求。此外，低轨道卫星在空间运动时会因多种起电机理在机体上累积大量的静电荷，对飞行安全带来多方面的威胁。
因此，制备高性能空间用防静电复合原子氧防护涂层，为低轨道、超低轨道卫星长期在轨运行至关重要。
发明内容
有鉴于此，本发明提供了一种空间用防静电复合原子氧防护涂层，是一种既能提升原子氧防护性能，又提供了一种能够适应低轨道空间环境的防静电薄膜，能够满足低轨、超低轨、长寿命卫星防静电原子氧防护性能需求。
为达到上述目的，本发明的技术方案为：一种空间用防静电复合原子氧防护涂层，包括在有机基底材料上由下至上设置的硅氧烷防护涂层、氧化铝涂层、SiOx原子氧防护涂层和氧化铟锡防静电涂层。
硅氧烷防护涂层利用等离子体增强化学气相沉积技术制备，厚度为50～600nm。
氧化铝涂层利用等离子体增强原子层沉积技术制备，厚度为1～200nm。
SiOx原子氧防护涂层(4)利用等离子体增强化学气相沉积技术制备，厚度为100～300nm。SiOx中x取值为[1,2]范围内的实数。
所述氧化铟锡防静电涂层利用RF磁控溅射法制备。
进一步地，有机基底材料为聚酰亚胺、聚四氟乙烯或聚亚安酯聚合物材料。
有益效果：
本发明在有机基底材料上采用化学气相沉积技术制备有机硅氧烷防原子氧涂层，通过原子层沉积技术制备三氧化二铝过渡层，采用化学气相沉积技术制备SiOx防原子氧涂层，采用RF磁控溅射方法沉积氧化铟锡，制的硅氧烷/氧化铝/SiOx/氧化铟锡复合涂层。既发挥了等离子体制备的硅氧烷涂层的柔韧性，又发挥了原子层沉积的涂层的致密性，使防护涂层的综合性能显著提高。又提供了一种能够适应低轨道空间环境的防静电薄膜。能够满足低轨、超低轨、长寿命卫星防静电原子氧防护性能需求。
附图说明
图1为本发明技术解决方案的示意图。
1-有机基底材料，2-硅氧烷防护涂层，3-氧化铝涂层，4-SiOx原子氧防护涂层，5-氧化铟锡防静电涂层。
具体实施方式
下面结合附图并举实施例，对本发明进行详细描述。
本发明提供了一种空间用防静电复合原子氧防护涂层，包括在有机基底材料1上由下至上设置的硅氧烷防护涂层2、氧化铝涂层3、SiOx原子氧防护涂层4和氧化铟锡防静电涂层5。
硅氧烷防护涂层2利用等离子体增强化学气相沉积技术制备，厚度为50～600nm。
氧化铝涂层3利用等离子体增强原子层沉积技术制备，厚度为1～200nm；
SiOx原子氧防护涂层4利用等离子体增强化学气相沉积技术制备，厚度为100～300nm。SiOx中x取值为[1,2]范围内的实数。
氧化铟锡防静电涂层5利用RF磁控溅射法制备。
有机基底材料1为聚酰亚胺、聚四氟乙烯或聚亚安酯聚合物材料。
实施例1：
本实施例采用化学气相沉积技术制备有机硅氧烷防原子氧涂层，通过原子层沉积技术制备三氧化二铝过渡层，采用化学气相沉积技术制备SiOx防原子氧涂层，采用RF磁控溅射方法沉积氧化铟锡，制的硅氧烷/氧化铝/SiOx/氧化铟锡复合涂层。既发挥了等离子体制备的硅氧烷涂层的柔韧性，又发挥了原子层沉积的涂层的致密性，使防护涂层的综合性能显著提高。又提供了一种能够适应低轨道空间环境的防静电薄膜。能够满足低轨、超低轨、长寿命卫星防静电原子氧防护性能需求。
综上所述，以上仅为本发明的较佳实施例而已，并非用于限定本发明的保护范围。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (2)
1.一种空间用防静电复合原子氧防护涂层，其特征在于，包括在有机基底材料(1)上由下至上设置的硅氧烷防护涂层(2)、氧化铝涂层(3)、SiOx原子氧防护涂层(4)和氧化铟锡防静电涂层(5)；
所述硅氧烷防护涂层(2)利用等离子体增强化学气相沉积技术制备，厚度为50～600nm；
所述氧化铝涂层(3)利用等离子体增强原子层沉积技术制备，厚度为1～200nm；
所述SiOx原子氧防护涂层(4)利用等离子体增强化学气相沉积技术制备，厚度为100～300nm；SiOx中x取值为[1,2]范围内的实数；
所述氧化铟锡防静电涂层(5)利用RF磁控溅射法制备。
2.如权利要求1所述的一种空间用防静电复合原子氧防护涂层，其特征在于，所述有机基底材料(1)为聚酰亚胺、聚四氟乙烯或聚亚安酯聚合物材料。
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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