CN115548619A - Terahertz four-way power divider and ultra-wideband radiation source - Google Patents
Terahertz four-way power divider and ultra-wideband radiation source Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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- H01P5/12—Coupling devices having more than two ports
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Abstract
The invention relates to the technical field of terahertz spectral analysis, in particular to a terahertz four-path power divider and an ultra-wideband radiation source, which comprise a first power divider, a second power divider and a third power divider, wherein the input end of the first power divider is connected with a signal access port through a first turning waveguide structure, the signal output end of the first power divider is respectively connected with the signal input ends of the second power divider and the third power divider through turning waveguide structures, and the signal access port, the signal output end of the second power divider and the signal output end of the third power divider are positioned on the same side of the first power divider. According to the terahertz radiation source circuit, the circuit corresponding to the frequency doubling amplification module and the terahertz radiation source link are arranged on the same side of the first power divider and are in a U-shaped structure, so that the terahertz radiation source circuit is folded in the longitudinal direction, the length and the volume of the terahertz radiation source are further effectively reduced, folding integration is realized, the requirement of the terahertz radiation source on the installation space is reduced, and the application range of the terahertz radiation source is expanded.
Description
Technical Field
The invention relates to the technical field of terahertz spectrum analysis, in particular to a terahertz four-way power divider and an ultra-wideband radiation source.
Background
The terahertz spectrum analysis technology is a novel detection technology. Different substances have different absorption, reflection or scattering on the terahertz waves. The terahertz spectrum technology can not only measure the amplitude information of signals, but also detect phase information which is difficult to measure by common optical measurement, and further analyze and process the signals to obtain physical information such as refractive index, dielectric constant, absorption coefficient and the like of the measured sample. Through the characteristic terahertz wave spectrums of substances with different compositions and different structures, the terahertz spectrum analysis technology can research the terahertz characteristic spectrum of the substances, identify the composition of the substances, analyze the vibration source of the substances in the terahertz frequency band characteristic spectrum, record the physical and chemical change process and the like. Terahertz rotation spectroscopy is the latest research field of terahertz spectral analysis and is an important tool for trace gas detection, identification and quantitative analysis. Due to the existence of permanent dipole moment of gas molecules, most polar gas molecules have abundant absorption peaks in the terahertz wave band. The terahertz rotation spectroscopy has great advantages in the aspect of detecting gas phase molecules. Therefore, terahertz rotation spectroscopy has been applied to the fields of industrial gas sensing, chemical reaction monitoring and the like.
In the process of implementing the present invention, the applicant finds that, in the existing solid-state terahertz radiation source based on the semiconductor technology, in order to fully exert the advantage of the large bandwidth of the terahertz frequency band, a scheme of integrating a plurality of radiation source links is generally adopted, and in the existing scheme of integrating a plurality of radiation source links, in order to facilitate stable connection of waveguide structures for bearing terahertz circuit units and reduce signal transmission loss, the existing scheme of integrating a plurality of radiation source links is generally connected in series by each waveguide structure, so that each radiation source link is in a linear structure, and the terahertz radiation source with the linear structure has high requirement on installation space, which limits the application of the terahertz radiation source.
Disclosure of Invention
The utility model aims at providing a terahertz is four ways merit now and is divided ware and ultra wide band radiation source solves the above-mentioned technical problem that exists among the prior art, mainly includes following two aspects content:
the utility model provides a terahertz four way merit is divided ware now, divide ware and third merit including first merit, the input of first merit branch ware is connected with signal access port through first turn waveguide structure, and the first signal output part of first merit branch ware is connected with the signal input part of second merit branch ware through second turn waveguide structure, and the second signal output part of first merit branch ware is connected with the signal input part of third merit branch ware through third turn waveguide structure, the signal output part of signal access port, second merit branch ware, the signal output part of third merit branch ware lie in same one side of first merit branch ware.
Further, the signal output end of the second power divider and the signal output end of the third power divider are located on the same plane, and the signal access port is parallel to the plane where the signal output end of the second power divider and the signal output end of the third power divider are located.
Further, at least one of the first power divider, the second power divider, and the third power divider is a terahertz power divider having a T-shaped structure, the terahertz power divider includes a unit input end, a first unit output end, and a second unit output end, a first matching branch is provided on the first unit output end, the first matching branch is used for performing impedance matching on the first unit output end, a second matching branch is provided on the second unit output end, the second matching branch is used for performing impedance matching on the second unit output end, the first matching branch and the second matching branch are communicated with each other through a coupling channel, and a terahertz wave absorber is provided in the coupling channel.
Furthermore, the terahertz power divider further comprises a first signal output end and a second signal output end, the output end of the first unit is connected with the first signal output end through a first turning waveguide unit, and the output end of the second unit is connected with the second signal output end through a second turning waveguide unit.
Furthermore, the terahertz wave absorber is a terahertz absorber or a terahertz wave-absorbing material.
Further, the terahertz wave absorbing material is a graphene and boron nitride composite material or a porous carrier loaded with MXene materials.
Furthermore, the first matching branch and the second matching branch are symmetrically arranged on two sides of a central axis of the input end of the unit.
Further, the first matching branch and the second matching branch are parallel to each other, and/or the first matching branch is disposed close to a connection end of the input end of the setting unit and the output end of the first unit, and the second matching branch is disposed close to a connection end of the input end of the setting unit and the output end of the second unit.
Furthermore, the coupling channel is arranged close to the input end of the unit, starting from the connection end of the first matching branch and the output end of the first unit, and is located at 1/4 lambda along the central axis direction of the first matching branch, wherein lambda is the wavelength of the terahertz wave.
The application provides a terahertz ultra-wideband radiation source in a second aspect, divide the ware including doubling of frequency amplification module, many terahertz radiation source links and foretell terahertz four ways merit, the doubling of frequency amplification module is used for multiplying the frequency of signal and enlargies to terahertz frequency channel, and the signal output part of doubling of frequency amplification module is connected with the signal access port of terahertz four ways merit branch ware, and the signal output part of terahertz four ways merit branch ware is connected with terahertz radiation source link respectively.
Compared with the prior art, the invention at least has the following technical effects:
when the terahertz ultra-wideband radiation source is installed, the circuit corresponding to the frequency doubling amplification module and the terahertz radiation source link are arranged on the same side of the first power divider and are in a U-shaped structure, the terahertz ultra-wideband radiation source circuit is folded in the longitudinal direction, the length and the volume of the terahertz ultra-wideband radiation source are further effectively reduced, folding integration is achieved, the requirement of the terahertz radiation source on an installation space is lowered, and the application range of the terahertz radiation source is widened.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention or the description of the prior art will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a terahertz four-way power divider according to the present invention;
FIG. 2 is a schematic structural diagram of the terahertz four-way power divider at another view angle;
fig. 3 is a schematic structural diagram of a terahertz power divider according to the present invention;
FIG. 4 is a diagram of a simulation result of the terahertz power divider of the present invention;
FIG. 5 is a schematic structural diagram of another structure of the terahertz four-path power divider according to the present invention;
FIG. 6 is a schematic structural diagram of the terahertz four-way power divider in FIG. 5 applied to a terahertz radiation source;
FIG. 7 is a schematic diagram of circuit element connections of a terahertz ultra-wideband radiation source;
in the figure, the position of the first and second end faces,
10. a first power divider; 20. a second power divider; 30. a third power divider; 40. a signal access port; 50. a first curved waveguide structure; 60. a second turning waveguide structure; 70. a third turning waveguide structure;
110. a cell input; 122. a first unit output; 124. a first matching branch; 126. a first turn waveguide unit; 128. a first signal output terminal; 132. a second unit output; 134. a second matching branch; 136. a second turn waveguide unit; 138. a second signal output terminal; 140. a coupling channel; 150. a terahertz wave absorber;
810. a frequency doubling amplifying module; 811. a Ka frequency band frequency multiplication amplifier; 812. a V-band width frequency multiplier; 813. a V-band broadband amplifier; 820. 110 to 170GHz radiation source link; 821. a resistive broadband frequency multiplier of 110 to 170GHz; 822. 110 to 170GHz broadband antennas; 830. 170 to 260GHz radiation source link; 831. a first W-band frequency multiplier; 832. 170 to 260GHz resistive broadband frequency multiplier; 833. 170 to 260GHz broadband antennas; 840. 260 to 400GHz radiation source link; 841. a second W-band frequency multiplier; 842. a first terahertz frequency multiplier; 843. 260 to 400GHz resistive broadband frequency multiplier; 844. 260 to 400GHz broadband antennas; 850. 400 to 520GHz radiation source link; 851. a third W-band frequency multiplier; 852. a second terahertz frequency multiplier; 853. 400 to 520GHz resistive broadband frequency multiplier; 854. a 400 to 520GHz broadband antenna; 860. terahertz four-way power divider.
Detailed Description
The following description provides many different embodiments, or examples, for implementing different features of the invention. The particular examples set forth below are illustrative only and are not intended to be limiting.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the present invention, unless otherwise expressly stated or limited, the first feature may be present on or under the second feature in direct contact with the first and second feature, or may be present in the first and second feature not in direct contact but in contact with another feature between them. Also, the first feature may be over, above or on the second feature including the first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is at a higher level than the second feature. A first feature being below, beneath or beneath a second feature includes the first feature being directly below and obliquely below the second feature or simply indicating that the first feature is at a lesser level than the second feature.
Example 1:
the embodiment of the present application provides a terahertz four-path power divider 860, as shown in fig. 1 and fig. 2, including a first power divider 10, a second power divider 20, and a third power divider 30, where an input end of the first power divider 10 is connected to a signal access port 40 through a first turning waveguide structure 50, a first signal output end of the first power divider 10 is connected to a signal input end of the second power divider 20 through a second turning waveguide structure 60, a second signal output end of the first power divider 10 is connected to a signal input end of the third power divider 30 through a third turning waveguide structure 70, and the signal access port 40, a signal output end of the second power divider 20, and a signal output end of the third power divider 30 are located on the same side of the first power divider 10.
In the conventional solid terahertz radiation source based on a semiconductor technology, in order to fully exert the advantage of large bandwidth of a terahertz frequency band, a scheme of integrating a plurality of radiation source links is generally adopted, and in the existing scheme of integrating a plurality of radiation source links, in order to facilitate stable connection of waveguide structures for bearing terahertz circuit units and reduce signal transmission loss, the radiation source links are generally connected in series in each waveguide structure, so that each radiation source link is in a linear structure, the requirement on installation space of the terahertz radiation source of the linear structure is high, and the application of the terahertz radiation source is limited; in this embodiment, by making the signal access port 40, the signal output end of the second power divider 20, and the signal output end of the third power divider 30 be located on the same side of the first power divider 10, when the solid-state terahertz radiation source is installed, the circuit corresponding to the frequency doubling amplification module 810 may be connected to the signal access port 40 of the terahertz four-way power divider 860, and the terahertz radiation source link may be connected to the signal output end of the terahertz four-way power divider 860, so that the circuit corresponding to the frequency doubling amplification module 810 and the terahertz radiation source link are disposed on the same side of the first power divider 10, and are U-shaped, thereby implementing folding of the solid-state terahertz radiation source circuit in the longitudinal direction, further effectively reducing the length and volume of the solid-state terahertz radiation source, implementing folding integration, reducing the requirement for the installation space of the terahertz radiation source, and improving the application range of the terahertz radiation source.
It should be noted that the first turning waveguide structure 50, the second turning waveguide structure 60, and the third turning waveguide structure 70 are respectively composed of one or more turning waveguide units connected in series, and preferably, the turning waveguide unit is a 90 ° turning waveguide.
Specifically, the signal output end of the second power divider 20 and the signal output end of the third power divider 30 are located on the same plane, and the signal access port 40 is parallel to the plane where the signal output end of the second power divider 20 and the signal output end of the third power divider 30 are located. By making the signal access port 40 parallel to the plane of the signal output end of the second power divider 20 and the plane of the signal output end of the third power divider 30, when the terahertz four-way power divider 860 is applied to a terahertz radiation source, the circuits corresponding to the frequency doubling amplification module 810 and the terahertz radiation source link are respectively arranged on the two parallel planes, and the mounting space therebetween is sufficient and does not affect each other, thereby effectively improving the integration stability of the terahertz radiation source and the utilization efficiency of the mounting space.
Specifically, at least one of the first power divider 10, the second power divider 20, and the third power divider 30 is a terahertz power divider having a T-shaped structure, as shown in fig. 3, the terahertz power divider includes a unit input end 110, a first unit output end 122, and a second unit output end 132, a first matching branch 124 is disposed on the first unit output end 122, the first matching branch 124 is used for performing impedance matching on the first unit output end 122, a second matching branch 134 is disposed on the second unit output end 132, the second matching branch 134 is used for performing impedance matching on the second unit output end 132, the first matching branch 124 and the second matching branch 134 are communicated through a coupling channel 140, and a terahertz wave absorber 150 is disposed in the coupling channel 140.
For the existing terahertz radiation source, in order to avoid signal interference between different radiation source links, a frequency doubling circuit is correspondingly arranged by adopting one radiation source link, and each frequency doubling circuit comprises a plurality of terahertz circuit units, so that a plurality of waveguide structures are required to be arranged, and the terahertz ultra-wideband radiation source comprises a large number of waveguide structures, so that the terahertz ultra-wideband radiation source is huge in size; in this embodiment, by improving the terahertz power divider, the first matching branch 124 is disposed on the first unit output end 122, and the second matching branch 134 is disposed on the second unit output end 132, the first matching branch 124 and the second matching branch 134 are first used for impedance matching, then the coupling channel 140 is additionally disposed between the first matching branch 124 and the second matching branch 134, the terahertz wave absorber 150 is disposed in the coupling channel 140, and the terahertz wave entering the matching branch is effectively absorbed by the terahertz wave absorber 150, so that the isolation between the first unit output end 122 and the second unit output end 132 is further improved, and the signal interference between the first unit output end 122 and the second unit output end 132 is reduced; therefore, in the terahertz radiation source, a signal frequency doubling amplification module 810 can be directly used for frequency doubling and amplifying a signal to a terahertz frequency band, then a terahertz four-way power divider 860 comprising a terahertz power divider is used for dividing the terahertz frequency band signal into four signals, and the four signals are respectively transmitted to four radiation source links.
In some embodiments, as shown in fig. 5 and fig. 6, a T-type terahertz power divider may be used as the first power divider 10, and branch waveguide directional couplers may be used as the second power divider 20 and the third power divider 30.
In some embodiments, a conventional T-junction power divider may be used as the first power divider 10, and a T-structure terahertz power divider may be used as the second power divider 20 and the third power divider 30.
In some embodiments, T-type terahertz power splitters may be used as the first power splitter 10, and conventional T-type junction power splitters may be used as the second power splitter 20 and the third power splitter 30.
In some embodiments, a branched waveguide directional coupler may be used as the first power divider 10, and a terahertz power divider with a T-shaped structure may be used as the second power divider 20 and the third power divider 30.
In some embodiments, a branched waveguide directional coupler may be further adopted as the first power divider 10, a conventional T-junction power divider as the second power divider 20, and a T-structure terahertz power divider as the third power divider 30.
Preferably, as shown in fig. 1 and 2, T-shaped terahertz power splitters are used as the first power splitter 10, the second power splitter 20, and the third power splitter 30.
Specifically, the terahertz power splitter further includes a first signal output end 128 and a second signal output end 138, the first unit output end 122 is connected to the first signal output end 128 through a first turning waveguide unit 126, and the second unit output end 132 is connected to the second signal output end 138 through a second turning waveguide unit 136. When the terahertz four-path power divider 860 is applied to a terahertz radiation source, in order to ensure that the circuits correspondingly connected with the two signal output ends of the terahertz power divider have sufficient installation space, the first unit output end 122 is connected with the first signal output end 128 through the first turning waveguide unit 126, the second unit output end 132 is connected with the second signal output end 138 through the second turning waveguide unit 136, so that the first signal output end 128 and the second signal output end 138 are parallel to each other, and therefore, the circuits correspondingly connected with the two signal output ends of the terahertz power divider are also installed in parallel to each other, and meanwhile, sufficient installation space is reserved for the connecting circuits corresponding to the adjacent power dividers, so that the space utilization efficiency is effectively improved, the volume of the terahertz radiation source is reduced, and the structural stability of the waveguide circuit of the terahertz radiation source is ensured. Preferably, the first turn waveguide unit 126 and the second turn waveguide unit 136 are 90 ° turn waveguides, respectively.
In one embodiment, an existing terahertz absorber (e.g., an adjustable terahertz metamaterial absorber disclosed in chinese patent publication No. CN 108333803B) may be disposed in the coupling channel 140 to absorb the terahertz waves entering the coupling channel 140, so as to improve the isolation between the first unit output 122 and the second unit output 132.
In some embodiments, an existing graphene and boron nitride composite material (e.g., a material that absorbs terahertz waves in an environment disclosed in chinese patent publication No. CN 112095075B) may be used as the terahertz wave absorber 150 to absorb terahertz waves entering the coupling channel 140, so as to improve the isolation between the first unit output end 122 and the second unit output end 132.
In some embodiments, a porous carrier loaded with an MXene material may be employed as the terahertz wave absorber 150, the MXene material may preferably have a nanosheet structure, the porous support may preferably be a porous polymer, and for example, a polyurethane sponge, polyimide, or the like may be used,Porous polymers such as polypropylene; preferably, the pore diameter of the porous carrier is more than or equal to 300 μm, and more preferably, the pore diameter of the porous carrier is more than or equal to 500 μm; the porosity of the porous carrier is preferably 85%, and the density of the porous carrier is preferably 0.02 to 0.056g/cm 3 Preferably, the mass of the loaded MXene material is less than 50% of the mass of the porous carrier; preferably, the MXene materials are attached to the porous support in a coated, film-formed and suspended form.
The MXene material is a two-dimensional transition metal carbide, nitride or carbonitride, the MXene nanosheet is obtained by etching and stripping a precursor MAX phase thereof, and the MXene material includes but is not limited to Ti 3 C 2 T x 、Nb 2 CT x 、Mo 2 TiC 2 T x 、Nb 4 C 3 T x 、Mo 2 Ti 2 C 3 T x 、V 2 CT x 、Ti 2 CT x 、Ti 3 CNT x Etc. wherein T x Represents surface functional groups such as: -OH, -F, -O, etc.; the MXene material can adopt an MXene material with a transverse length of 0.05-30 mu m, a thickness of 3-20 nm and a conductivity of more than or equal to 5000S/cm; for a terahertz wave absorbing material, surface reflection needs to be reduced and internal electromagnetic wave loss needs to be improved as much as possible, (1) when terahertz waves are incident to the surface of terahertz absorbing foam, due to the macroporous structure (the pore size is 300-3 mm, and the average pore size is more than or equal to 500 μm) of the foam, the electromagnetic parameters of the foam are approximately equal to those of air, and the terahertz waves directly enter the foam without reflection; (2) In the absorption foam, due to the existence of pore diameters with different sizes, the MXene nanosheets form three different forms (a coating form, a film forming form and a suspension form) on the foam skeleton network, and the MXene nanosheets in the three different forms provide a large amount of reflection and scattering for incident terahertz waves, so that the transmission path of the terahertz waves in the absorption material is greatly increased; meanwhile, the MXene nano-film in the film forming form and the suspension form greatly improves the absorption area of the material; more importantly, due to the extremely high conductivity (the conductivity can reach more than 5000S/cm) of the MXene nanosheets, the electrical loss of the terahertz waves is very large, and therefore the MXene nanosheets are extremely high in conductivity, and the terahertz waves are very high in electrical lossThe terahertz waves are strongly absorbed in the foam, the absorption rate is higher than 99.99%, and the reflectivity is as low as 0.00003%, so that in the terahertz power divider, when the terahertz waves enter the coupling channel 140, the terahertz waves are continuously reflected and absorbed by MXene, and finally are completely absorbed in the coupling channel 140, the terahertz waves are effectively prevented from being transmitted between the first unit output end 122 and the second unit output end 132, and the isolation of the terahertz power divider is improved.
Specifically, the first matching branch 124 and the second matching branch 134 are symmetrically disposed on two sides of the central axis of the input end 110 of the unit. By symmetrically arranging the first matching branch 124 and the second matching branch 134 on two sides of the central axis of the unit input end 110, the impedance matching of the first matching branch 124 to the first unit output end 122 is balanced with the impedance matching of the second matching branch 134 to the second unit output end 132, so as to ensure the stability of the output signals of the first unit output end 122 and the second unit output end 132
Specifically, the first matching branch 124 and the second matching branch 134 are parallel to each other, and meanwhile, based on the T-shaped terahertz power splitter, the first unit output end 122 and the second unit output end 132 are symmetrically arranged, so that output signals of the first unit output end 122 and the second unit output end 132 are further balanced and stable, and meanwhile, it is ensured that the terahertz wave absorber 150 can completely and effectively absorb terahertz waves of the first matching branch 124 and the second matching branch 134 at the same time, and the isolation between the first unit output end 122 and the second unit output end 132 is improved.
Specifically, the first matching branch 124 is disposed close to the connection end between the input end 110 of the setting unit and the output end 122 of the first unit, and the second matching branch 134 is disposed close to the connection end between the input end 110 of the setting unit and the output end 132 of the second unit, so that the first matching branch 124 and the second matching branch 134 perform impedance matching on the terahertz power divider, and the isolation between the output end 122 of the first unit and the output end 132 of the second unit is improved.
Specifically, the coupling channel 140 is disposed near the unit input end 110, starting from the connection end of the first matching branch 124 and the first unit output end 122, along the central axis direction of the first matching branch 124, the coupling channel 140 is located at 1/4 λ, where λ is the wavelength of the terahertz wave. When the coupling channel 140 is arranged at 1/4 λ, the terahertz waves in the first matching branch 124 and the second matching branch 134 can more easily enter the coupling channel 140, so that the terahertz wave absorber 150 can completely absorb more terahertz waves, and the isolation between the first unit output end 122 and the second unit output end 132 is further effectively improved; the simulation result of the terahertz power divider in this embodiment is shown in fig. 4, in the drawing, S11 is an echo signal, S21 is an output signal of the first unit output end 122, S31 is an output signal of the second unit output end 132, and S23 is an isolation between the first unit output end 122 and the second unit output end 132, and it can be seen that the terahertz power divider has an echo loss superior to-25 dB near a radio frequency signal required by 110GHz, and the amplitude unevenness of two output ports is lower than 0.2dB, so that the performance is excellent.
Example 2:
the embodiment of the application provides a terahertz ultra-wideband radiation source, as shown in fig. 6 and 7, the terahertz ultra-wideband radiation source includes a frequency doubling amplification module 810, a plurality of terahertz radiation source links, and a terahertz four-way power divider 860 in embodiment 1, the frequency doubling amplification module 810 is configured to frequency-double amplify a signal to a terahertz frequency band, a signal output end of the frequency doubling amplification module 810 is connected with a signal access port 40 of the terahertz four-way power divider 860, and signal output ends of the terahertz four-way power divider 860 are respectively connected with the terahertz radiation source links.
Because the isolation between the first unit output end 122 and the second unit output end 132 in the terahertz power divider is high, the signal interference between the first unit output end 122 and the second unit output end 132 can be effectively reduced; therefore, in the terahertz ultra-wideband radiation source, a signal frequency doubling amplification module 810 can be directly used for frequency doubling amplification of a signal to a terahertz frequency band, then a terahertz four-way power divider 860 comprising a terahertz power divider is used for dividing the terahertz frequency band signal into four signals, and the four signals are respectively transmitted to four radiation source links.
Specifically, the frequency doubling amplification module 810 comprises a Ka band frequency doubling amplifier 811, a V band width frequency doubling device 812, and a V band broadband amplifier 813, which are sequentially connected along the signal transmission direction.
Specifically, the terahertz ultra-wideband radiation source comprises a 110 to 170GHz radiation source link 820, a 170 to 260GHz radiation source link 830, an 260 to 400GHz radiation source link 840 and a 400 to 520GHz radiation source link 850.
Specifically, the 110 to 170GHz radiation source link 820 comprises a 110 to 170GHz resistive broadband frequency multiplier 821 and a 110 to 170GHz broadband antenna 822 which are sequentially connected along a signal transmission direction.
Specifically, the 170 to 260GHz radiation source link 830 comprises a first W-band frequency multiplier 831, a 170 to 260GHz resistive broadband frequency multiplier 832 and a 170 to 260GHz broadband antenna 833.
Specifically, the 260 to 400GHz radiation source link 840 comprises a second W-band frequency multiplier 841, a first terahertz frequency multiplier 842, a 260 to 400GHz resistive broadband frequency multiplier 843 and a 260 to 400GHz broadband antenna 844.
Specifically, the 400 to 520GHz radiation source link 850 comprises a third W-band frequency multiplier 851, a second terahertz frequency multiplier 852, a 400 to 520GHz resistive broadband frequency multiplier 853 and a 400 to 520GHz broadband antenna 854.
In some embodiments, the terahertz four-way power splitter 860 is made by 3D printing.
In some embodiments, the terahertz ultra-wideband radiation source comprises 3 terahertz radiation source links, and the 3 terahertz radiation source links can be respectively connected with three signal output ends in the terahertz four-way power divider 860 in a one-to-one correspondence manner, so that integration of the terahertz ultra-wideband radiation source is realized; the terahertz ultra-wideband radiation source comprises 5 terahertz radiation source links, 4 terahertz radiation source links can be respectively connected with four signal output ends in the terahertz four-way power divider 860 in a one-to-one correspondence mode, and the fifth terahertz radiation source link is independently matched with one frequency doubling amplification module 810, so that the integration of the terahertz ultra-wideband radiation source can be realized.
The above description is intended to be illustrative of the preferred embodiment of the present invention and should not be taken as limiting the invention, but rather, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (10)
1. The terahertz four-path power divider is characterized by comprising a first power divider, a second power divider and a third power divider, wherein the input end of the first power divider is connected with a signal access port through a first turning waveguide structure, the first signal output end of the first power divider is connected with the signal input end of the second power divider through a second turning waveguide structure, the second signal output end of the first power divider is connected with the signal input end of the third power divider through a third turning waveguide structure, and the signal access port, the signal output end of the second power divider and the signal output end of the third power divider are located on the same side of the first power divider.
2. The terahertz four-way power divider of claim 1, wherein the signal output terminal of the second power divider and the signal output terminal of the third power divider are located on the same plane, and the signal access port is parallel to the planes of the signal output terminal of the second power divider and the signal output terminal of the third power divider.
3. The terahertz four-way power divider of claim 1, wherein at least one of the first power divider, the second power divider, and the third power divider is a terahertz power divider with a T-shaped structure, the terahertz power divider includes a unit input end, a first unit output end, and a second unit output end, the first unit output end is provided with a first matching branch, the first matching branch is used for performing impedance matching on the first unit output end, the second unit output end is provided with a second matching branch, the second matching branch is used for performing impedance matching on the second unit output end, the first matching branch and the second matching branch are communicated with each other through a coupling channel, and a terahertz wave absorber is disposed in the coupling channel.
4. The terahertz four-way power divider of claim 3, further comprising a first signal output terminal and a second signal output terminal, wherein the first unit output terminal is connected with the first signal output terminal through a first turning waveguide unit, and the second unit output terminal is connected with the second signal output terminal through a second turning waveguide unit.
5. The terahertz four-way power divider of claim 3 or 4, wherein the terahertz wave absorber is a terahertz absorber or a terahertz wave-absorbing material.
6. The terahertz four-way power divider of claim 5, wherein the terahertz wave-absorbing material is a graphene and boron nitride composite material or a porous carrier loaded with MXene material.
7. The terahertz four-way power divider of claim 3 or 4, wherein the first matching branch and the second matching branch are symmetrically arranged on two sides of a central axis of the input end of the unit.
8. The terahertz four-way power divider as claimed in claim 7, wherein the first matching branch and the second matching branch are parallel to each other, and/or the first matching branch is disposed close to a connection end of the input end of the setting unit and the output end of the first unit, and the second matching branch is disposed close to a connection end of the input end of the setting unit and the output end of the second unit.
9. The terahertz four-way power divider as claimed in claim 3 or 4, wherein the coupling channel is disposed near the input end of the unit, starting from the connection end of the first matching branch and the output end of the first unit, along the central axis of the first matching branch, the coupling channel is located at 1/4 λ, and λ is the wavelength of the terahertz wave.
10. A terahertz ultra-wideband radiation source is characterized by comprising a frequency doubling amplification module, a plurality of terahertz radiation source links and the terahertz four-way power divider as claimed in any one of claims 1 to 9, wherein the frequency doubling amplification module is used for frequency doubling and amplifying signals to a terahertz frequency band, a signal output end of the frequency doubling amplification module is connected with a signal access port of the terahertz four-way power divider, and signal output ends of the terahertz four-way power divider are respectively connected with the terahertz radiation source links.
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