CN115542364A - Satellite-borne space particle radiation effect comprehensive measuring instrument - Google Patents

Abstract

The invention relates to a satellite-borne space particle radiation effect comprehensive measuring instrument, wherein a detector is carried on a satellite platform, and the measuring instrument comprises a probe; the probe comprises a sensor module; the sensor module includes: the single-particle upset detection device comprises a first semiconductor sensor, a second semiconductor sensor, a third semiconductor sensor and a single-particle upset detection chip; the device comprises a first semiconductor sensor, a second semiconductor sensor and a third semiconductor sensor, wherein the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor are used for respectively measuring high-energy protons and heavy ions, radiation dose rate and LET spectrum in different combination modes to generate corresponding signals; the single event upset detection chip is arranged between the second semiconductor sensor and the third semiconductor sensor, is used for measuring the single event upset condition and corresponds to an LET spectrum. The invention realizes the detection of high-energy protons and He ions, radiation dose rate, LET spectrum and single-particle upset information simultaneously by an integrated probe design and by using three silicon semiconductor sensors and one single-particle upset detection chip.

Description

A Comprehensive Measuring Instrument for Radiation Effects of Spaceborne Space Particles

technical field

The invention relates to the field of aerospace, in particular to a comprehensive measuring instrument for radiation effects of spaceborne space particles.

Background technique

The monitoring of the space environment and its effects plays a direct role in avoiding risks and diagnosing faults during the on-orbit operation of satellites, and is also conducive to improving space environment protection measures; in addition, with the development of high-performance devices, new materials and high-sensitivity detectors It is impossible to completely avoid the risks caused by the space environment in the design stage, so the space environment and effect monitoring has become an important link to ensure the long life and high reliability of satellites and improve the adaptability design level of satellite space environments.

Since the space environment itself changes with time and space conditions, the understanding of the space environment requires a wide space area and long-term data accumulation, which has the characteristics of real-time wide-area needs. Detection is far from enough in terms of spatial coverage and temporal resolution.

In terms of detection elements, the current detection of satellite orbital space particle radiation environment and its effects has covered medium and high-energy charged particles, LET spectrum, radiation dose, single event flipping, etc. These space environment elements already have independent detection methods, but due to These detection functions are distributed in different detectors, and these detection elements are poorly connected in time and space, which is not conducive to the comprehensive analysis of satellite in-orbit faults.

It is the first time that a measuring instrument realizes the above-mentioned multiple detection functions simultaneously through one sensor probe in one instrument.

Contents of the invention

The object of the present invention is to propose a measuring instrument that simultaneously realizes the above-mentioned multiple detection functions through one sensor probe. In order to achieve the above object, the present invention is achieved through the following technical solutions.

The present invention proposes a comprehensive measurement instrument for spaceborne particle radiation effects, the detector is carried on a satellite platform, the measurement instrument includes a probe; the probe includes a sensor module; the sensor module includes: a first semiconductor sensor , a second semiconductor sensor, a third semiconductor sensor and a single event reversal detection chip;

The first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor are used to measure high-energy protons and heavy ions, radiation dose rates and LET spectra in different combinations to generate corresponding signals;

The single event inversion detection chip is placed between the second semiconductor sensor and the third semiconductor sensor, and is used for measuring the single event inversion, corresponding to the LET spectrum.

As one of the improvements of the above technical solution, the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor respectively measure high-energy protons and heavy ions, radiation dose rates and LET spectra through different combinations, including:

The first semiconductor sensor and the second semiconductor sensor detect high-energy protons and heavy ions, specifically: the first semiconductor sensor is used to generate signals that reflect the amplitude information of high-energy protons or heavy ions, so as to detect the energy spectrum of high-energy protons or heavy ions Carry out division; the second semiconductor sensor detector is used to identify high-energy protons or heavy ions according to the divided energy spectrum; the charge signals generated by high-energy protons or heavy ions incident on the first semiconductor sensor and the second semiconductor sensor are all exceeding the preset value after circuit processing threshold;

The second semiconductor sensor measures the radiation dose rate, specifically: the dose rate is calculated by the total energy transfer of the particles in the second semiconductor sensor per unit time and the mass of the second semiconductor sensor, and the shielding thickness position of the second semiconductor sensor is obtained. dose rate at

The first semiconductor sensor, the second semiconductor sensor and the third semiconductor chip sensor measure the LET spectrum, specifically: the second semiconductor sensor and the third semiconductor sensor form a semiconductor telescope for LET spectrum measurement, and the second semiconductor sensor is used as The amplitude analyzer measures the LET value of the particle, and the third semiconductor sensor is used for the positioning of the particle to determine whether the particle hits or penetrates the device under test; and according to whether the particle passes through the first semiconductor sensor, the small opening angle and the large LET spectrum under two conditions of opening angle; small opening angle refers to the incident particles passing through the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor, and the signals generated after processing all exceed the preset threshold; large opening angle refers to the incident particle The particles pass through at least the second semiconductor sensor and the third semiconductor sensor, and the generated signals all exceed preset thresholds after being processed.

As one of the improvements of the above technical solution, the measuring instrument also includes: a circuit module; the circuit module includes: a preamplifier, a peak protection circuit, a trigger circuit, an FPGA circuit, and an AD collector;

The front board includes: a first processing circuit, a second processing circuit and a third processing circuit;

The first processing circuit is used to amplify and process the electrical signal generated by the first semiconductor sensor, and transmit it to the peak protection circuit and the trigger circuit;

The second processing circuit is used to amplify and process the electrical signal generated by the second semiconductor sensor, and transmit it to the peak protection circuit and the trigger circuit;

The third processing circuit is used to amplify and process the electrical signal generated by the third semiconductor sensor, and transmit it to the peak protection circuit and the trigger circuit;

The trigger circuit is used to compare the amplitude of the signal output by the front board with the set trigger threshold, and when the signal amplitude exceeds the trigger threshold, the trigger circuit sends a trigger signal to the FPGA circuit;

The peak protection circuit is used to perform peak hold processing on the signal output by the preamplifier;

The FPGA circuit is used to issue a signal collection instruction to the AD collector after receiving the trigger signal; it is also used to package and cache the signal information transmitted by the AD collector.

The AD collector is used to collect and AD convert the signal output by the peak protection circuit after receiving the signal collection instruction, and transmit it to the FPGA circuit.

As one of the improvements of the above technical solution, the first processing circuit, the second processing circuit and the third processing circuit all include: a preamplifier circuit and a main amplifier circuit;

The preamplifier circuit is used for performing charge-voltage conversion on the charge pulse output by the first semiconductor sensor, the second semiconductor sensor or the third semiconductor sensor, simultaneously shaping it into a double-exponential signal, and transmitting it to the main amplifier circuit;

The main amplifying circuit is used to re-amplify the double-exponential signal transmitted by the pre-amplifying circuit, and transmit it to the peak protection circuit and the trigger circuit respectively.

As one of the improvements of the above-mentioned technical solution, the high-energy protons and He ions, radiation dose rate and LET spectrum information are all collected by the AD collector, packaged and transmitted to the satellite platform through the FPGA circuit.

As one of the improvements of the above-mentioned technical solution, the single event flipping detection chip is read and written by the FPGA circuit, including: judging the position of the single event flipping in each cycle, recording the flipping time, and comparing it with the measurement result of the LET spectrum .

As one of the improvements of the above technical solution, the circuit module further includes: a secondary power supply circuit, a sensor bias circuit, an engineering parameter detection circuit and a communication circuit;

Described communication circuit, is used for realizing the communication between FPGA circuit and satellite platform;

The secondary power supply circuit is used to convert the power supply provided by the satellite platform into the power supply required by the measuring instrument;

The sensor bias circuit is used to deflect space particles incident to the sensor module;

The engineering parameter detection circuit is used to detect the parameters of the measuring instrument, including current, voltage and temperature, and is used to monitor whether the measuring instrument works normally.

As one of the improvements of the above technical solutions,

The measuring instrument also includes a chassis; the chassis is a cage-type multi-layer structure, and a circuit board is installed on each layer, and the circuit board includes: an analog board, a power board and a computer board; the probe also includes: a probe housing;

The probe housing is used to install and fix the sensor module; the probe housing is divided into two parts, which are respectively installed on both sides of the analog board, one side of which is equipped with the first semiconductor sensor, the second semiconductor sensor and the front board; Install the third semiconductor sensor on the other side;

The secondary power supply circuit, sensor bias circuit, engineering parameter detection circuit and communication circuit are arranged on the power supply board;

The peak protection circuit and the trigger circuit are arranged on the analog board;

The FPGA circuit, AD collector and communication circuit are arranged on the computer board.

As one of the improvements to the above-mentioned technical solution, the chassis also includes a mounting board for on-orbit verification of the anti-radiation capability of components and components and single event flipping; specifically includes: installing the ASIC circuit board to be tested on the mounting board. On the board, the ASIC circuit board includes: an ASIC chip to be tested, 2 DSP chips to be tested and 1 monitoring FPGA chip;

The monitoring FPGA chip is used for real-time monitoring of the single event upset of the ASIC chip and the DSP chip under test, and sends the monitoring results to the FPGA circuit of the computer board.

As one of the improvements of the above technical solution, the analog board, the carrying board, the power board and the computer board are connected through a printed board connector.

The space particle radiation effect comprehensive measuring instrument introduced in the present invention integrates the detection of multiple functions such as the above-mentioned space environment and its effects in a miniaturized detector, and is also equipped with self-developed domestic components (ASIC and DSP) Carry out on-orbit radiation resistance and single event flip verification. The comprehensive measuring instrument has been successfully mounted on the last stage of the Changsi C rocket. In the future, the advantages of the large number of orbits left by the last stage and the wide distribution of orbits under the high-density launch of the current space mission can be used to improve the spatial coverage and time resolution of space environment detection. Effect.

Compared with the prior art, the present invention has the advantages of:

1. Through the integrated probe design, using three silicon semiconductor sensors and a piece of SRAM (Static Random-Access Memory, that is, the single event flipping detection chip of this application), simultaneously realize the detection of high-energy protons and He ions, radiation dose rate, LET spectrum Detection of various space environments and effects such as single particle flipping information;

2. The technical solution of this application can integrate the traditional discrete multiple space environment and its effect detection elements into one device, and through the logical combination of each sensor, each sensor can be used efficiently to achieve different functions, maximizing Reduced satellite resource occupation;

3. The implementation scheme of the present application can be directly applied to the detection of the space environment of various satellite orbits and its effects, and serves for fault analysis and component evaluation of satellites.

Description of drawings

Figure 1 is a structural outline diagram of the space particle radiation effect comprehensive measuring instrument;

Figure 2 is the internal structure diagram of the space particle radiation effect comprehensive measuring instrument;

Fig. 3 is a block diagram of the electrical principle of the space particle radiation effect comprehensive measurement instrument;

Fig. 4 is a three-dimensional schematic diagram of the space particle radiation effect comprehensive measuring instrument;

Fig. 5 is three views of the comprehensive measurement instrument for radiation effects of space particles, wherein Fig. 5(a) is a front view, Fig. 5(b) is a top view, and Fig. 5(c) is a side view.

detailed description

The technical solutions provided by the present invention are further described below in conjunction with the examples.

1. Composition and connection relationship

The schematic diagram of the overall structure of the space particle radiation effect comprehensive measuring instrument is shown in Figure 1, and the internal structure diagram is shown in Figure 2.

The composition of the space particle radiation effect comprehensive measuring instrument is divided into three parts: the probe, the electronic circuit and the chassis structure. The main structure of the chassis is cage-drawer type, with four layers in total, and a circuit board is installed inside each layer. 4 printed circuit boards, including 1 analog board (used to fix the sensor probe and amplify the output signal of the probe), 1 board (used for on-orbit radiation resistance of domestic components (ASIC and DSP) and single Particle verification), 1 power board (for secondary power conversion and power supply to each functional module), 1 computer board (for collecting data and packaging and communicating data).

The probe is fixed on the first layer structure, including the probe shell, three semiconductor sensors, a single event flip detection chip and a preamp circuit board. The probe shell is used to install the fixed sensor and the internal pre-amplifier circuit board; the probe shell is divided into two parts, which are respectively installed on both sides of the analog board (Figure 2), one side includes sensor D1, sensor D2 and the pre-amplifier board, The other side is sensor D3; the three sensors measure high-energy protons and heavy ions (He), radiation dose rate and LET spectrum through different combinations. In addition, a piece of SRAM (AT68166F) is placed between the second sensor and the third sensor. The output signal of the chip sensor is subjected to charge-voltage conversion and signal shaping.

The signal output by the probe and the power input wiring are welded to the analog board through the opening of the probe shell structure; the analog board, the mounting board, the power board, and the computer board are connected through the printed board connector.

2. Detection scheme and working principle

As mentioned above, the probe system of the space particle radiation effect comprehensive measuring instrument mainly includes the sensor housing, three silicon semiconductor sensors, one SRAM and one preamp circuit board. The parameters of the three silicon semiconductor sensors are as follows:

Compared with the previous similar detectors for measuring LET spectra, the present invention adds a semiconductor sensor to the design, because a large number of other particles will be mixed in with only one sensor for proton measurement. In this way, the first two sensors can be used for high-energy proton measurement, and the signal of the middle sensor can be used for high-energy proton measurement after amplitude analysis, and the LET spectrum can be measured together with the third sensor, and the result of the amplitude analysis can be directly used to calculate radiation dose rate.

For high-energy protons and He ions, the first sensor D1 and the second sensor D2 are used to divide the energy spectrum of high-energy protons through the amplitude information of D1, and the D2 detector is used for coincidence. The logical working mode of the two sensors is: D1 D2, that is, the charge signals generated by the incident particles on the two sensors of D1 and D2 all exceed the preset threshold after being processed by the circuit (pre-amplifier, main amplifier); the energy measurement range of high-energy protons is: 21.8MeV～275MeV, He ion The measuring range is: 87.8MeV～92.4MeV.

For radiation dose rate, use the second chip sensor D2 to measure. The dose rate under the shielding thickness of the structure can be obtained by calculating the dose rate through the total energy transfer of the particles in D2 per unit time and the mass of D2. The total energy in the D2 sensor is calculated according to the count value measured by each energy channel.

The single particle detection device SRAM (AT68166F) is sandwiched between the second sensor D2 and the third sensor D3 detector. The chip is installed on the first analog board, and its control signals and data signals are transmitted through the connectors between the boards. To the computer board, the FPGA on the computer board directly performs read and write operations, judges the position of the single particle flipping in each working cycle, and records the flipping time, so that it can be compared with the measurement results of the LET spectrum.

D2 and D3 form a semiconductor detector for LET spectrum measurement, D2 is used for amplitude analysis to measure the LET value of the particle, D3 is used for particle positioning, and is used to determine whether the particle hits or penetrates the device under test. According to whether the sensor D1 is used as a coincidence signal, that is, whether the signal of the first semiconductor sensor is included in the measurement logic or whether the particle passes through the first semiconductor sensor, the small opening angle can be obtained (D1·D2·D3, which means that the incident particle passes through D1, D2 , D3 three semiconductor sensors, and the signals generated by the amplification exceed the preset threshold) and the large opening angle (D2·D3, which means that the incident particles pass through at least two semiconductor sensors D2 and D3, and the signals generated are amplified Both exceed the preset threshold) LET spectra in the two cases, the measurement range of the LET spectra is: 0.001-37 (MeV/(mg/cm2)).

In addition to the single event flipping information which is directly read by the computer board, high-energy protons and He ions, radiation dose rate, and LET spectrum information are collected by the AD collector of the computer board. CAN bus for communication.

In addition, the measuring instrument also has an ASIC circuit board, which mainly includes 1 self-developed 12 million ASIC chip, 2 C6700 series DSP chips (1 domestic and 1 imported), and 1 monitoring FPGA chip. The monitoring FPGA monitors the single event turnover of the tested ASIC and DSP in real time, and sends the monitoring results to the FPGA processor of the computer board of the space particle radiation effect comprehensive measuring instrument through the asynchronous RS422.

3. Electronics Implementation Scheme

The electronic circuit (pre-amplifier board) of the probe part mainly realizes the preprocessing of the sensor pulse signal, including the pre-amplification circuit, which converts the charge pulse output from the sensor into a double-exponential signal at the same time, and the main amplifier circuit converts the signal Further amplification, the output signal of the main amplifier is output to the electronics box through the probe cable.

The internal circuit of the electronics box (4 printed circuit boards) is mainly to further amplify the output signal of the front amplifier, and maintain the peak amplitude to make it beneficial to the acquisition of the back-end AD circuit; at the same time, the main amplifier signal enters the trigger, when the signal amplitude After the value exceeds the trigger threshold, the trigger notifies the FPGA, and the FPGA circuit controls the AD to complete the peak protection signal acquisition, scientific data processing, engineering parameter acquisition, scientific data packaging and buffering, and send the data packet through the asynchronous 422 bus interface, and receive it from the digital tube computer CAN bus indirect commands.

The electronics box also includes a secondary power supply circuit, a sensor bias circuit, and an engineering parameter detection circuit.

The equipped module circuit mainly monitors the single event flipping of the tested ASIC and DSP in real time through FPGA, and sends the monitoring results to the FPGA processor inside the particle radiation effect comprehensive measuring instrument through asynchronous RS422. The block diagram of the electrical principle of the instrument is shown in Figure 3.

Figure 4 and Figure 5 show the three-dimensional schematic diagram and three-dimensional view of the space particle radiation effect comprehensive measuring instrument, in which Figure 5(a) is a front view, Figure 5(b) is a top view, and Figure 5(c) is a side view .

detailed description:

The detector chassis is a cage structure, divided into four layers, the third layer has a connector X01, which is a power supply and telemetry contact; the fourth layer has two connectors X02 and X03, which are used for RS422 communication and CAN bus with the satellite platform communication. In addition, there is a connector X04 on the second layer for debugging, and it is sealed before installing the star.

The detector probe is fixed on the first layer, which is divided into upper and lower parts. The sensors D1 and D2 are placed on the component side of the first circuit board, and the sensor D3 is placed on the back of the first circuit board. The SRAM is fixed on the first circuit board and corresponds to the sensitive areas of the three sensors.

The comprehensive measuring instrument is installed inside the satellite, and the temperature is controlled by the satellite platform.

It can be seen from the above specific description of the present invention that the present application uses an integrated probe design, uses three silicon semiconductor sensors and a single particle flip detection chip, and simultaneously realizes the detection of high-energy protons and He ions, radiation dose rate, and LET spectrum. Detection of various space environments and effects such as single-event flipping information.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than limit them. Although the present invention has been described in detail with reference to the embodiments, those skilled in the art should understand that modifications or equivalent replacements to the technical solutions of the present invention do not depart from the spirit and scope of the technical solutions of the present invention, and all of them should be included in the scope of the present invention. within the scope of the claims.

Claims (10)

1. A satellite-borne space particle radiation effect comprehensive measuring instrument is characterized in that a detector is carried on a satellite platform, and the measuring instrument comprises a probe; the probe comprises a sensor module; the sensor module includes: the single event upset detection device comprises a first semiconductor sensor, a second semiconductor sensor, a third semiconductor sensor and a single event upset detection chip;

the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor are used for respectively measuring the high-energy protons and heavy ions, the radiation dose rate and the LET spectrum in different combination modes to generate corresponding signals;

the single event upset detection chip is arranged between the second semiconductor sensor and the third semiconductor sensor, is used for measuring the single event upset condition and corresponds to an LET spectrum.

2. The comprehensive spaceborne particle radiation effect measuring instrument as claimed in claim 1, wherein the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor respectively measure the high-energy protons and heavy ions, the radiation dose rate and the LET spectrum by different combinations, and the method comprises:

the first semiconductor sensor and the second semiconductor sensor detect high-energy protons and heavy ions, and specifically comprise: the first semiconductor sensor is used for generating signals reflecting amplitude information of high-energy protons or heavy ions so as to divide an energy spectrum of the high-energy protons or the heavy ions; the second semiconductor sensor detector is used for identifying high-energy protons or heavy ions according to the divided energy spectrum; the charge signals generated by the high-energy protons or heavy ions incident to the first semiconductor sensor and the second semiconductor sensor exceed a preset threshold after being processed by a circuit;

the second semiconductor sensor measures the radiation dose rate, and specifically comprises: calculating the dose rate according to the total energy transfer of the particles in the second semiconductor sensor in unit time and the mass of the second semiconductor sensor to obtain the dose rate at the shielding thickness position of the second semiconductor sensor;

the first semiconductor sensor, the second semiconductor sensor and the third semiconductor wafer sensor are used for measuring an LET spectrum, and the method specifically comprises the following steps: a second semiconductor sensor for measuring the LET value of the particle as an amplitude analyzer and a third semiconductor sensor for positioning the particle to determine whether the particle hits or penetrates the device under test, forming a semiconductor telescope for LET spectrum measurement; obtaining an LET spectrum under two conditions of a small field angle and a large field angle according to whether the particles pass through the first semiconductor sensor or not; the small field angle means that the incident particles pass through the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor, and the generated signals exceed the preset threshold after being processed, and the large field angle means that the incident particles pass through at least the second semiconductor sensor and the third semiconductor sensor, and the generated signals exceed the preset threshold after being processed.

3. The comprehensive spaceborne particle radiation effect measuring instrument as recited in claim 1, further comprising: a circuit module; the circuit module includes: the device comprises a front board, a peak-hold circuit, a trigger circuit, an FPGA circuit and an AD collector;

the front board comprises: a first processing circuit, a second processing circuit and a third processing circuit;

the first processing circuit is used for amplifying the electric signal generated by the first semiconductor sensor and transmitting the electric signal to the peak protection circuit and the trigger circuit;

the second processing circuit is used for amplifying the electric signal generated by the second semiconductor sensor and transmitting the electric signal to the peak protection circuit and the trigger circuit;

the third processing circuit is used for amplifying the electric signal generated by the third semiconductor sensor and transmitting the electric signal to the peak protection circuit and the trigger circuit;

the trigger circuit is used for comparing the amplitude of the signal output by the front board with a set trigger threshold value, and when the signal amplitude exceeds the trigger threshold value, the trigger circuit sends a trigger signal to the FPGA circuit;

the peak-hold circuit is used for carrying out peak-hold processing on the signal output by the front panel;

the FPGA circuit is used for issuing a signal acquisition instruction to the AD acquisition device after receiving the trigger signal; and the device is also used for packing and caching the signal information transmitted by the AD collector

And the AD collector is used for collecting and AD converting the signal output by the peak protection circuit after receiving the signal collecting instruction, and transmitting the signal to the FPGA circuit.

4. The comprehensive spaceborne particle radiation effect measuring instrument as recited in claim 3, wherein the first processing circuit, the second processing circuit and the third processing circuit each comprise: a pre-amplification circuit and a main amplification circuit;

the pre-amplification circuit is used for carrying out charge-voltage conversion on the charge pulse output by the first semiconductor sensor, the second semiconductor sensor or the third semiconductor sensor, simultaneously forming a double-exponential signal and transmitting the double-exponential signal to the main amplification circuit;

and the main amplifying circuit is used for amplifying the double-exponent signal transmitted by the pre-amplifying circuit again and transmitting the double-exponent signal to the peak-hold circuit and the trigger circuit respectively.

5. The spaceborne space particle radiation effect comprehensive measuring instrument according to claim 3, wherein the high-energy proton and He ions, the radiation dose rate and the LET spectrum information are collected by an AD collector, packed by an FPGA circuit and transmitted to a satellite platform.

6. The comprehensive measuring instrument of the spaceborne space particle radiation effect according to claim 3, wherein the single-particle upset detection chip is read and written by an FPGA circuit, and comprises: and judging the single particle overturning position in each period, recording the overturning time, and comparing the overturning time with the measuring result of the LET spectrum.

7. The integrated spaceborne particle radiation effect measuring instrument according to claim 3, wherein the circuit module further comprises: the device comprises a secondary power supply circuit, a sensor bias circuit, an engineering parameter detection circuit and a communication circuit;

the communication circuit is used for realizing the communication between the FPGA circuit and the satellite platform;

the secondary power supply circuit is used for converting a power supply provided by the satellite platform into a power supply required by the measuring instrument;

the sensor bias circuit is used for deflecting space particles to be incident to the sensor module;

the engineering parameter detection circuit is used for detecting parameters of the measuring instrument, including current, voltage and temperature, and monitoring whether the measuring instrument works normally.

8. The comprehensive measurement instrument for particle radiation effect in space-borne according to claim 7,

the measuring instrument further comprises a case; the machine case is a food steamer formula multilayer structure, and a circuit board is installed on each layer, and the circuit board includes: the device comprises a simulation board, a power supply board and a computer board; the probe further comprises: a probe housing;

the probe shell is used for installing and fixing the sensor module; the probe shell is divided into two parts which are respectively arranged on two sides of the analog board, wherein a first semiconductor sensor, a second semiconductor sensor and a front board are arranged on one side; the other side is provided with a third semiconductor sensor;

the secondary power supply circuit, the sensor bias circuit, the engineering parameter detection circuit and the communication circuit are arranged on the power supply board;

the peak-hold circuit and the trigger circuit are arranged on the analog board;

the FPGA circuit, the AD collector and the communication circuit are arranged on the computer board.

9. The spaceborne space particle radiation effect comprehensive measuring instrument as claimed in claim 8, wherein the case further comprises a carrying plate for on-orbit verification of the anti-irradiation capability and the single particle upset condition of components; the method specifically comprises the following steps: install the ASIC circuit board that will await measuring on the board of taking over, ASIC circuit board includes: the system comprises an ASIC chip to be tested, 2 DSP chips to be tested and 1 monitoring FPGA chip;

the monitoring FPGA chip is used for monitoring the single event upset condition of the ASIC chip and the DSP chip to be tested in real time and sending the monitoring result to the FPGA circuit of the computer board.

10. The comprehensive measuring instrument for particle radiation effect in satellite space according to claim 9, wherein the simulation board, the landing board, the power board and the computer board are connected by printed board connectors.

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