CN115542364A - Satellite-borne space particle radiation effect comprehensive measuring instrument - Google Patents
Satellite-borne space particle radiation effect comprehensive measuring instrument Download PDFInfo
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- CN115542364A CN115542364A CN202211115535.4A CN202211115535A CN115542364A CN 115542364 A CN115542364 A CN 115542364A CN 202211115535 A CN202211115535 A CN 202211115535A CN 115542364 A CN115542364 A CN 115542364A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/1603—Measuring radiation intensity with a combination of at least two different types of detector
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
- G01T1/361—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry with a combination of detectors of different types, e.g. anti-Compton spectrometers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
- G01T1/366—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry with semi-conductor detectors
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Abstract
The invention relates to a satellite-borne space particle radiation effect comprehensive measuring instrument, wherein a detector is carried on a satellite platform, and the measuring instrument comprises a probe; the probe comprises a sensor module; the sensor module includes: the single-particle upset detection device comprises a first semiconductor sensor, a second semiconductor sensor, a third semiconductor sensor and a single-particle upset detection chip; the device comprises a first semiconductor sensor, a second semiconductor sensor and a third semiconductor sensor, wherein the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor are used for respectively measuring high-energy protons and heavy ions, radiation dose rate and LET spectrum in different combination modes to generate corresponding signals; the single event upset detection chip is arranged between the second semiconductor sensor and the third semiconductor sensor, is used for measuring the single event upset condition and corresponds to an LET spectrum. The invention realizes the detection of high-energy protons and He ions, radiation dose rate, LET spectrum and single-particle upset information simultaneously by an integrated probe design and by using three silicon semiconductor sensors and one single-particle upset detection chip.
Description
Technical Field
The invention relates to the field of aerospace, in particular to a comprehensive measuring instrument for a particle radiation effect in a satellite-borne space.
Background
The monitoring of the space environment and the effect thereof has direct effects on avoiding risks and carrying out fault diagnosis in the in-orbit operation stage of the satellite and is also beneficial to improving the protection measures of the space environment; in addition, with the application of high-performance devices, novel materials and high-sensitivity detectors in aerospace engineering, risks caused by space environments cannot be completely avoided in the design stage, so that space environment and effect monitoring becomes an important link for guaranteeing the long service life and high reliability of satellites and improving the adaptability design level of the satellite space environments.
Because the space environment changes along with the space condition, the knowledge of the space environment needs to be accumulated in a wide space area and a long time, and the method has the characteristics of real-time wide area, and the environment is subjected to in-situ detection only by carrying corresponding loads of part of satellites at present, which is far from insufficient in space coverage or time resolution.
In the aspect of detection elements, detection of the satellite orbit space particle radiation environment and the effect thereof at present covers medium-high energy charged particles, an LET spectrum, radiation dose, single particle inversion and the like, the space environment elements have independent detection means, but because the detection functions are distributed in different detectors, the detection elements have poor relation in time and space, and the comprehensive analysis of the satellite orbit fault is not facilitated.
The measuring instrument which simultaneously realizes the multiple detection functions in one instrument through one sensor probe belongs to the first time.
Disclosure of Invention
The invention aims to provide a measuring instrument which can realize multiple detection functions simultaneously through one sensor probe. In order to achieve the above purpose, the present invention is realized by the following technical scheme.
The invention provides a satellite-borne space particle radiation effect comprehensive measuring instrument, wherein a detector is carried on a satellite platform and comprises a probe; the probe comprises a sensor module; the sensor module includes: the single-particle upset detection device comprises a first semiconductor sensor, a second semiconductor sensor, a third semiconductor sensor and a single-particle upset detection chip;
the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor are used for respectively measuring the high-energy protons and heavy ions, the radiation dose rate and the LET spectrum in different combination modes to generate corresponding signals;
the single event upset detection chip is arranged between the second semiconductor sensor and the third semiconductor sensor, is used for measuring the single event upset condition and corresponds to an LET spectrum.
As one of the improvements of the above technical solution, the first semiconductor sensor, the second semiconductor sensor, and the third semiconductor sensor respectively measure the high-energy protons and heavy ions, the radiation dose rate, and the LET spectrum by different combination methods, including:
the first semiconductor sensor and the second semiconductor sensor detect high-energy protons and heavy ions, and specifically comprise: the first semiconductor sensor is used for generating a signal reflecting amplitude information of the high-energy proton or heavy ion so as to divide an energy spectrum of the high-energy proton or heavy ion; the second semiconductor sensor detector is used for identifying high-energy protons or heavy ions according to the divided energy spectrum; the charge signals generated by the high-energy protons or heavy ions incident to the first semiconductor sensor and the second semiconductor sensor exceed a preset threshold after being processed by a circuit;
the second semiconductor sensor measures the radiation dose rate, and specifically comprises: calculating the dose rate according to the total energy transfer of the particles in the second semiconductor sensor in unit time and the mass of the second semiconductor sensor to obtain the dose rate at the shielding thickness position of the second semiconductor sensor;
the first semiconductor sensor, the second semiconductor sensor and the third semiconductor wafer sensor measure the LET spectrum, and specifically comprise the following steps: the second semiconductor sensor is used for measuring the LET value of the particle as an amplitude analyzer, and the third semiconductor sensor is used for positioning the particle to determine whether the particle hits or penetrates the device to be measured; obtaining an LET spectrum under two conditions of a small field angle and a large field angle according to whether the particles pass through the first semiconductor sensor or not; the small field angle means that the incident particles pass through the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor, and the generated signals exceed a preset threshold value after being processed, and the large field angle means that the incident particles pass through at least the second semiconductor sensor and the third semiconductor sensor, and the generated signals exceed the preset threshold value after being processed.
As an improvement of the above technical solution, the measuring instrument further includes: a circuit module; the circuit module includes: the device comprises a front board, a peak-hold circuit, a trigger circuit, an FPGA circuit and an AD collector;
the front board comprises: a first processing circuit, a second processing circuit and a third processing circuit;
the first processing circuit is used for amplifying the electric signal generated by the first semiconductor sensor and transmitting the electric signal to the peak protection circuit and the trigger circuit;
the second processing circuit is used for amplifying the electric signal generated by the second semiconductor sensor and transmitting the electric signal to the peak protection circuit and the trigger circuit;
the third processing circuit is used for amplifying the electric signal generated by the third semiconductor sensor and transmitting the electric signal to the peak protection circuit and the trigger circuit;
the trigger circuit is used for comparing the amplitude of the signal output by the front board with a set trigger threshold value, and when the signal amplitude exceeds the trigger threshold value, the trigger circuit sends a trigger signal to the FPGA circuit;
the peak-hold circuit is used for carrying out peak-hold processing on the signal output by the front panel;
the FPGA circuit is used for issuing a signal acquisition instruction to the AD acquisition device after receiving the trigger signal; and the AD acquisition unit is also used for packaging and caching the signal information transmitted by the AD acquisition unit.
And the AD collector is used for collecting and AD converting the signal output by the peak protection circuit after receiving the signal collecting instruction, and transmitting the signal to the FPGA circuit.
As an improvement of the above technical solution, the first processing circuit, the second processing circuit, and the third processing circuit each include: a pre-amplifier circuit and a main amplifier circuit;
the pre-amplification circuit is used for carrying out charge-voltage conversion on the charge pulse output by the first semiconductor sensor, the second semiconductor sensor or the third semiconductor sensor, simultaneously forming a double-exponential signal and transmitting the double-exponential signal to the main amplification circuit;
and the main amplifying circuit is used for amplifying the double-exponent signal transmitted by the pre-amplifying circuit again and transmitting the double-exponent signal to the peak-hold circuit and the trigger circuit respectively.
As one improvement of the technical scheme, the high-energy proton and He ion, the radiation dose rate and the LET spectrum information are collected by an AD collector, packed by an FPGA circuit and transmitted to a satellite platform.
As one improvement of the above technical solution, the single event upset detection chip performs read-write operation by an FPGA circuit, and includes: and judging the single particle overturning position in each period, recording the overturning time, and comparing the overturning time with the measurement result of the LET spectrum.
As an improvement of the above technical solution, the circuit module further includes: the device comprises a secondary power supply circuit, a sensor bias circuit, an engineering parameter detection circuit and a communication circuit;
the communication circuit is used for realizing the communication between the FPGA circuit and the satellite platform;
the secondary power supply circuit is used for converting a power supply provided by the satellite platform into a power supply required by the measuring instrument;
the sensor bias circuit is used for deflecting space particles to be incident to the sensor module;
the engineering parameter detection circuit is used for detecting parameters of the measuring instrument, including current, voltage and temperature, and monitoring whether the measuring instrument works normally.
As one of the improvements of the above-mentioned technical solution,
the measuring instrument further comprises a case; the machine case is a food steamer formula multilayer structure, and a circuit board is installed on each layer, and the circuit board includes: the device comprises a simulation board, a power supply board and a computer board; the probe further comprises: a probe housing;
the probe shell is used for installing and fixing the sensor module; the probe shell is divided into two parts which are respectively arranged on two sides of the analog board, wherein a first semiconductor sensor, a second semiconductor sensor and a front board are arranged on one side; the other side is provided with a third semiconductor sensor;
the secondary power supply circuit, the sensor bias circuit, the engineering parameter detection circuit and the communication circuit are arranged on the power supply board;
the peak-hold circuit and the trigger circuit are arranged on the analog board;
the FPGA circuit, the AD collector and the communication circuit are arranged on the computer board.
As one improvement of the technical scheme, the case also comprises a carrying plate used for carrying out on-track verification on the anti-irradiation capability and the single-particle upset condition of the components; the method specifically comprises the following steps: install the ASIC circuit board that will await measuring on the board of taking over, ASIC circuit board includes: the system comprises an ASIC chip to be tested, 2 DSP chips to be tested and 1 monitoring FPGA chip;
and the monitoring FPGA chip is used for monitoring the single event upset conditions of the ASIC chip and the DSP chip to be detected in real time and sending the monitoring result to the FPGA circuit of the computer board.
As one improvement of the technical scheme, the simulation board, the carrying board, the power supply board and the computer board are connected through printed board connectors.
The invention introduces a space particle radiation effect comprehensive measuring instrument, which integrates the detection of a plurality of functions of the space environment, the effect thereof and the like in a miniaturized detector, and simultaneously carries home-made components (ASIC and DSP) which are independently researched and developed to carry out on-orbit anti-irradiation and single particle upset verification. The comprehensive measuring instrument is successfully carried on the last stage of the long fourth third rocket, and can subsequently utilize the advantages of large number of orbit reservations and wide orbit distribution of the last stage under the high-density launching of the current space mission, thereby achieving the effect of improving the space coverage rate and the time resolution of space environment detection.
Compared with the prior art, the invention has the advantages that:
1. through the design of an integrated probe, three silicon semiconductor sensors and one SRAM (Static Random-Access Memory, namely the single event upset detection chip of the application) are used, and the detection of various space environments and effects such as high-energy protons and He ions, radiation dose rate, LET spectrum and single event upset information is realized at the same time;
2. according to the technical scheme, the traditional discrete multiple space environments and effect detection elements thereof can be integrated into one device, and through the logic combination of the sensors, different functions are realized by efficiently utilizing each sensor, so that the occupation of satellite resources is reduced to the maximum extent;
3. the implementation scheme of the application can be directly applied to space environment of various satellite orbits and effect detection thereof, and is used for fault analysis and component evaluation of the satellite.
Drawings
FIG. 1 is a structural outline diagram of a space particle radiation effect comprehensive measuring instrument;
FIG. 2 is a diagram of the internal structure of the space particle radiation effect comprehensive measuring instrument;
FIG. 3 is an electrical schematic block diagram of a space particle radiation effect comprehensive measuring instrument;
FIG. 4 is a three-dimensional schematic diagram of a space particle radiation effect comprehensive measuring instrument;
fig. 5 is three views of the space particle radiation effect comprehensive measuring instrument, wherein fig. 5 (a) is a front view, fig. 5 (b) is a top view, and fig. 5 (c) is a side view.
Detailed Description
The technical scheme provided by the invention is further illustrated by combining the following embodiments.
1. Composition and connection relation
The overall structure schematic diagram of the space particle radiation effect comprehensive measuring instrument is shown in fig. 1, and the internal structure diagram is shown in fig. 2.
The space particle radiation effect comprehensive measuring instrument is composed of a probe, an electronic circuit and a case structure. The main structure of the case is in a steamer type and has four layers, and a circuit board is arranged in each layer of structure. The system comprises 4 printed circuit boards, 1 analog board (used for fixing a sensor probe and amplifying output signals of the probe), 1 load board (used for on-orbit anti-irradiation and single-particle verification of domestic components (ASIC and DSP)), 1 power board (used for secondary power conversion and power supply of each functional module), and 1 computer board (used for collecting data, packaging and communicating the data).
The probe is fixed on the first layer structure and comprises a probe shell, three semiconductor sensors, a single-particle upset detection chip and a front discharge circuit board. The probe shell is used for installing and fixing the sensor and the internal front discharge circuit board; the probe shell is divided into two parts which are respectively arranged on two sides (figure 2) of the simulation board, wherein one side comprises a sensor D1, a sensor D2 and a front board, and the other side is a sensor D3; the three sensors respectively measure high-energy protons and heavy ions (He), radiation dose rate and LET spectra in different combination modes. In addition, a piece of SRAM (AT 68166F) is arranged between the second sensor and the third sensor, and the chip is welded on the first layer of circuit board and used for measuring the single event upset condition; the front panel is used for carrying out charge-voltage conversion and signal shaping on output signals of each sensor.
Signals output by the probe and power input wires are welded to the analog board through the opening of the probe shell structure; the simulation board, the carrying board, the power board and the computer board are connected through printed board connectors.
2. Detection scheme and operating principle
As mentioned above, the space particle radiation effect comprehensive measuring instrument probe system mainly comprises a sensor shell, three silicon semiconductor sensors, an SRAM and a front discharge circuit board. The parameters of the three silicon semiconductor sensors are as follows:
compared with the previous similar detector for measuring LET spectrum, the invention adds a semiconductor sensor in design, because a large amount of other particles are mixed in when only one sensor is used for proton measurement. Therefore, the front two sensors can be used for measuring high-energy protons, the signal of the middle sensor is used for measuring the high-energy protons after amplitude analysis, an LET spectrum is measured together with the third sensor, and meanwhile, the result of the amplitude analysis can be directly used for calculating the radiation dose rate.
For high-energy protons and He ions, a first sensor D1 and a second sensor D2 are used, the energy spectrum of the high-energy protons is divided through the amplitude information of the D1, a D2 detector is used for coincidence, and the logic working modes of the two sensors are as follows: d1. D2, namely charge signals generated by incident particles on the D1 and D2 sensors exceed a preset threshold after being processed by a circuit (a front amplifier and a main amplifier); the energy measurement range of the high-energy protons is: 21.8 MeV-275MeV, the measurement range of the He ions is as follows: 87.8 MeV-92.4 MeV.
For the radiation rate, a second sheet sensor D2 is used for measurement. And calculating the dose rate according to the total energy transfer of the particles in the D2 in unit time and the mass of the D2, so as to obtain the dose rate under the shielding thickness of the structure, wherein the total energy in the D2 sensor is calculated according to the counting value measured by each energy channel.
The single particle detection device SRAM (AT 68166F) is clamped between the second D2 and third D3 sensors, the chip is installed on the first layer of analog board, its control signal and data signal are transmitted to the computer board through the connector between the boards, the FPGA on the computer board directly performs read-write operation, judges the single particle turning position in each working period, and records the turning time, thus being capable of comparing with the measurement result of LET spectrum.
D2 and D3 form a semiconductor detector for LET spectral measurements, D2 being used for amplitude analysis to measure LET values of particles, D3 being used for particle localization to determine whether a particle hits or penetrates the device under test. According to whether the sensor D1 is used as a coincidence signal, namely whether the signal of the first semiconductor sensor is brought into a measurement logic or whether the particle passes through the first semiconductor sensor, LET spectrums under two conditions of a small opening angle (D1. D2. D3, which means that the incident particle passes through three semiconductor sensors D1, D2 and D3 and the generated signal exceeds a preset threshold after being amplified) and a large opening angle (D2. D3, which means that the incident particle passes through at least two semiconductor sensors D2 and D3 and the generated signal exceeds the preset threshold after being amplified) can be obtained, and the measurement range of the LET spectrums is as follows: 0.001-37 (MeV/(mg/cm 2)).
Except that the single event upset information is directly read by the computer board, the high-energy proton and He ion, the radiation dose rate and LET spectrum information are collected by an AD collector of the computer board, are processed by the FPGA and then are packed into data, and are communicated with the satellite platform through an RS422 and a CAN bus.
In addition, the measuring instrument is also provided with an ASIC circuit board which mainly comprises 1 independently developed ASIC chip of 1200 ten thousand gates, 2C 6700 series DSP chips (1 chip respectively at home and import) and 1 monitoring FPGA chip. And the monitoring FPGA carries out real-time monitoring on the single event upset conditions of the ASIC and the DSP to be detected, and sends the monitoring result to the FPGA processor of the computer board of the space particle radiation effect comprehensive measuring instrument through the asynchronous RS 422.
3. Implementation scheme of electronics
The electronic circuit (front board) of the probe mainly realizes the pretreatment of the sensor pulse signal, and comprises a front amplifying circuit, wherein the front amplifying circuit converts the charge voltage of the charge pulse output by the sensor and forms a double-exponential signal, the main amplifying circuit further amplifies the signal, and the main amplifying output signal is output to an electronic box through a probe cable.
The circuit (4 printed circuit boards) in the electronics box mainly further amplifies the front-amplifying output signal and keeps the peak amplitude, so that the acquisition of a rear-end AD circuit is facilitated; meanwhile, a main amplifier signal enters a trigger, when the signal amplitude exceeds a trigger threshold value, the trigger informs an FPGA (field programmable gate array), an FPGA circuit controls an AD (analog-to-digital) to complete peak-to-peak signal acquisition, scientific data processing, engineering parameter acquisition and scientific data packaging and caching, and a data packet is sent through an asynchronous 422 bus interface and receives a CAN (controller area network) bus indirect instruction from a digital tube computer.
The electronic box also comprises a secondary power supply circuit, a sensor bias circuit, an engineering parameter detection circuit and the like.
The module-carrying circuit is mainly used for monitoring the single event upset condition of the ASIC and the DSP to be detected in real time through the FPGA and sending the monitoring result to the FPGA processor inside the particle radiation effect comprehensive measuring instrument through the asynchronous RS 422. The electrical schematic block diagram of the instrument is shown in fig. 3.
The three-dimensional sketch and the three-dimensional structural views of the space particle radiation effect comprehensive measuring instrument are shown in fig. 4 and 5, wherein fig. 5 (a) is a front view, fig. 5 (b) is a top view, and fig. 5 (c) is a side view.
The specific implementation mode is as follows:
the detector case is of a food-steamer type structure and is divided into four layers, and the third layer is provided with a connector X01 which is a power supply and remote measurement contact; the fourth layer has two connectors X02 and X03 for RS422 communication and CAN bus communication with the satellite platform. In addition, the second layer has a connector X04 for debugging and sealing before satellite installation.
The probe of the detector is fixed on the first layer and divided into an upper part and a lower part. The sensors D1 and D2 are arranged on the surface of the first circuit board, and the sensor D3 is arranged on the back surface of the first circuit board. The SRAM is fixed on the first circuit board and corresponds to the sensitive areas of the three sensors.
The comprehensive measuring instrument is arranged inside the satellite, and the temperature is controlled by the satellite platform.
It can be seen from the above detailed description of the present invention that the present application, through the integrated probe design, uses three silicon semiconductor sensors and one single event upset detection chip, and simultaneously implements the detection of various spatial environments and effects such as high-energy protons and He ions, radiation dose rate, LET spectrum, single event upset information, and the like.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A satellite-borne space particle radiation effect comprehensive measuring instrument is characterized in that a detector is carried on a satellite platform, and the measuring instrument comprises a probe; the probe comprises a sensor module; the sensor module includes: the single event upset detection device comprises a first semiconductor sensor, a second semiconductor sensor, a third semiconductor sensor and a single event upset detection chip;
the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor are used for respectively measuring the high-energy protons and heavy ions, the radiation dose rate and the LET spectrum in different combination modes to generate corresponding signals;
the single event upset detection chip is arranged between the second semiconductor sensor and the third semiconductor sensor, is used for measuring the single event upset condition and corresponds to an LET spectrum.
2. The comprehensive spaceborne particle radiation effect measuring instrument as claimed in claim 1, wherein the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor respectively measure the high-energy protons and heavy ions, the radiation dose rate and the LET spectrum by different combinations, and the method comprises:
the first semiconductor sensor and the second semiconductor sensor detect high-energy protons and heavy ions, and specifically comprise: the first semiconductor sensor is used for generating signals reflecting amplitude information of high-energy protons or heavy ions so as to divide an energy spectrum of the high-energy protons or the heavy ions; the second semiconductor sensor detector is used for identifying high-energy protons or heavy ions according to the divided energy spectrum; the charge signals generated by the high-energy protons or heavy ions incident to the first semiconductor sensor and the second semiconductor sensor exceed a preset threshold after being processed by a circuit;
the second semiconductor sensor measures the radiation dose rate, and specifically comprises: calculating the dose rate according to the total energy transfer of the particles in the second semiconductor sensor in unit time and the mass of the second semiconductor sensor to obtain the dose rate at the shielding thickness position of the second semiconductor sensor;
the first semiconductor sensor, the second semiconductor sensor and the third semiconductor wafer sensor are used for measuring an LET spectrum, and the method specifically comprises the following steps: a second semiconductor sensor for measuring the LET value of the particle as an amplitude analyzer and a third semiconductor sensor for positioning the particle to determine whether the particle hits or penetrates the device under test, forming a semiconductor telescope for LET spectrum measurement; obtaining an LET spectrum under two conditions of a small field angle and a large field angle according to whether the particles pass through the first semiconductor sensor or not; the small field angle means that the incident particles pass through the first semiconductor sensor, the second semiconductor sensor and the third semiconductor sensor, and the generated signals exceed the preset threshold after being processed, and the large field angle means that the incident particles pass through at least the second semiconductor sensor and the third semiconductor sensor, and the generated signals exceed the preset threshold after being processed.
3. The comprehensive spaceborne particle radiation effect measuring instrument as recited in claim 1, further comprising: a circuit module; the circuit module includes: the device comprises a front board, a peak-hold circuit, a trigger circuit, an FPGA circuit and an AD collector;
the front board comprises: a first processing circuit, a second processing circuit and a third processing circuit;
the first processing circuit is used for amplifying the electric signal generated by the first semiconductor sensor and transmitting the electric signal to the peak protection circuit and the trigger circuit;
the second processing circuit is used for amplifying the electric signal generated by the second semiconductor sensor and transmitting the electric signal to the peak protection circuit and the trigger circuit;
the third processing circuit is used for amplifying the electric signal generated by the third semiconductor sensor and transmitting the electric signal to the peak protection circuit and the trigger circuit;
the trigger circuit is used for comparing the amplitude of the signal output by the front board with a set trigger threshold value, and when the signal amplitude exceeds the trigger threshold value, the trigger circuit sends a trigger signal to the FPGA circuit;
the peak-hold circuit is used for carrying out peak-hold processing on the signal output by the front panel;
the FPGA circuit is used for issuing a signal acquisition instruction to the AD acquisition device after receiving the trigger signal; and the device is also used for packing and caching the signal information transmitted by the AD collector
And the AD collector is used for collecting and AD converting the signal output by the peak protection circuit after receiving the signal collecting instruction, and transmitting the signal to the FPGA circuit.
4. The comprehensive spaceborne particle radiation effect measuring instrument as recited in claim 3, wherein the first processing circuit, the second processing circuit and the third processing circuit each comprise: a pre-amplification circuit and a main amplification circuit;
the pre-amplification circuit is used for carrying out charge-voltage conversion on the charge pulse output by the first semiconductor sensor, the second semiconductor sensor or the third semiconductor sensor, simultaneously forming a double-exponential signal and transmitting the double-exponential signal to the main amplification circuit;
and the main amplifying circuit is used for amplifying the double-exponent signal transmitted by the pre-amplifying circuit again and transmitting the double-exponent signal to the peak-hold circuit and the trigger circuit respectively.
5. The spaceborne space particle radiation effect comprehensive measuring instrument according to claim 3, wherein the high-energy proton and He ions, the radiation dose rate and the LET spectrum information are collected by an AD collector, packed by an FPGA circuit and transmitted to a satellite platform.
6. The comprehensive measuring instrument of the spaceborne space particle radiation effect according to claim 3, wherein the single-particle upset detection chip is read and written by an FPGA circuit, and comprises: and judging the single particle overturning position in each period, recording the overturning time, and comparing the overturning time with the measuring result of the LET spectrum.
7. The integrated spaceborne particle radiation effect measuring instrument according to claim 3, wherein the circuit module further comprises: the device comprises a secondary power supply circuit, a sensor bias circuit, an engineering parameter detection circuit and a communication circuit;
the communication circuit is used for realizing the communication between the FPGA circuit and the satellite platform;
the secondary power supply circuit is used for converting a power supply provided by the satellite platform into a power supply required by the measuring instrument;
the sensor bias circuit is used for deflecting space particles to be incident to the sensor module;
the engineering parameter detection circuit is used for detecting parameters of the measuring instrument, including current, voltage and temperature, and monitoring whether the measuring instrument works normally.
8. The comprehensive measurement instrument for particle radiation effect in space-borne according to claim 7,
the measuring instrument further comprises a case; the machine case is a food steamer formula multilayer structure, and a circuit board is installed on each layer, and the circuit board includes: the device comprises a simulation board, a power supply board and a computer board; the probe further comprises: a probe housing;
the probe shell is used for installing and fixing the sensor module; the probe shell is divided into two parts which are respectively arranged on two sides of the analog board, wherein a first semiconductor sensor, a second semiconductor sensor and a front board are arranged on one side; the other side is provided with a third semiconductor sensor;
the secondary power supply circuit, the sensor bias circuit, the engineering parameter detection circuit and the communication circuit are arranged on the power supply board;
the peak-hold circuit and the trigger circuit are arranged on the analog board;
the FPGA circuit, the AD collector and the communication circuit are arranged on the computer board.
9. The spaceborne space particle radiation effect comprehensive measuring instrument as claimed in claim 8, wherein the case further comprises a carrying plate for on-orbit verification of the anti-irradiation capability and the single particle upset condition of components; the method specifically comprises the following steps: install the ASIC circuit board that will await measuring on the board of taking over, ASIC circuit board includes: the system comprises an ASIC chip to be tested, 2 DSP chips to be tested and 1 monitoring FPGA chip;
the monitoring FPGA chip is used for monitoring the single event upset condition of the ASIC chip and the DSP chip to be tested in real time and sending the monitoring result to the FPGA circuit of the computer board.
10. The comprehensive measuring instrument for particle radiation effect in satellite space according to claim 9, wherein the simulation board, the landing board, the power board and the computer board are connected by printed board connectors.
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| CN202211115535.4A CN115542364A (en) | 2022-09-14 | 2022-09-14 | Satellite-borne space particle radiation effect comprehensive measuring instrument |
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