CN115537917A - Perovskite epitaxial growth process and deposition equipment for process - Google Patents
Perovskite epitaxial growth process and deposition equipment for process Download PDFInfo
- Publication number
- CN115537917A CN115537917A CN202211235570.XA CN202211235570A CN115537917A CN 115537917 A CN115537917 A CN 115537917A CN 202211235570 A CN202211235570 A CN 202211235570A CN 115537917 A CN115537917 A CN 115537917A
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- decomposition
- deposition
- epitaxial growth
- growth process
- sliding
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- 230000008021 deposition Effects 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 77
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 50
- 238000009434 installation Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 2
- 238000009501 film coating Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 description 24
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052990 silicon hydride Inorganic materials 0.000 description 4
- -1 silicon ions Chemical class 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
Abstract
The application relates to a perovskite epitaxial growth process, which comprises the following steps: s1: cutting the lining, namely cutting the lining with the required size according to the required size; s2: cleaning the gasket, and cleaning the cut gasket; s3: setting a magnetic field, wherein the magnetic field in the direction opposite to the direction of the ion impact liner is arranged in the machine body; s4: depositing and coating, namely depositing and coating the substrate through deposition equipment; s5: and taking out the gasket, and after the film coating is finished, starting the deposition equipment to take out the gasket after the film coating is finished. The application has the effect of reducing the probability of damage occurring to the lining.
Description
Technical Field
The present application relates to the field of solar cell production, and in particular, to a perovskite epitaxial growth process and deposition equipment for the process.
Background
The radio frequency plasma enhanced chemical vapor deposition method is used for preparing a microcrystalline silicon film at a low temperature, but the efficiency is low, large-scale production is difficult to form, and the popularization and the application are limited.
In order to improve the growth rate, the existing radio frequency plasma enhanced chemical vapor deposition preparation device improves the decomposition efficiency of silane by increasing the excitation power of radio frequency glow discharge, thereby improving the growth rate of silicon ions carrying high energy impacting a liner on the liner, and further improving the deposition efficiency.
Disclosure of Invention
In order to reduce the probability of damage to the liner, the present application provides a perovskite epitaxial growth process.
The perovskite epitaxial growth process provided by the application adopts the following technical scheme:
a perovskite epitaxial growth process comprises the following steps:
s1: cutting the lining, namely cutting the lining with the required size according to the required size;
s2: cleaning the gasket, and cleaning the cut gasket;
s3: setting a magnetic field, wherein the magnetic field in the direction opposite to the direction of the ion impact liner is arranged in the machine body;
s4: depositing and coating, namely depositing and coating the substrate through deposition equipment;
s5: and taking out the gasket, and taking out the gasket after the plating is finished.
Through adopting above-mentioned technical scheme, through setting up the magnetic field opposite with ion striking direction, when the ion is towards the facing striking, the impact force of ion is slowed down through reverse magnetic field to reduce the facing because of the too big probability that appears damaging of ion impact force.
The utility model provides a deposition apparatus for perovskite epitaxial growth technology, includes the organism, seted up decomposition deposition chamber on the organism, decomposition deposition chamber top is provided with the transmitter, and decomposition deposition chamber bottom is provided with heating platform, install the intake pipe on the organism, intake-tube connection and intercommunication decompose the transmitter of deposition intracavity, be provided with magnetic field generator in the decomposition deposition chamber, magnetic field generator sets up between transmitter and heating platform.
Through adopting above-mentioned technical scheme, magnetic field generator produces the magnetic field between transmitter and heating platform, reduces the impact velocity of ion through magnetic field to reduce the facing and because of the too big probability that the damage appears of ion impact force.
Optionally, the magnetic field generator includes a mounting frame and an electromagnetic coil, the mounting frame is detachably mounted in the decomposition deposition chamber, and the electromagnetic coil is mounted in the mounting frame.
By adopting the technical scheme, the mounting frame is used for mounting the electromagnetic coil, so that the electromagnetic coil is convenient to disassemble and assemble in the decomposition deposition cavity, and the electromagnetic coil is electrified to generate a magnetic field.
Optionally, an exhaust pipe is installed on the machine body, the exhaust pipe is connected and communicated with the decomposition deposition cavity, and one side, far away from the machine body, of the exhaust pipe is connected with an exhaust device.
Through adopting above-mentioned technical scheme, exhaust equipment cooperation blast pipe is bled the decomposition deposit chamber to the realization is adjusted the pressure in the decomposition deposit chamber.
Optionally, install mass flow meter in the intake pipe, be provided with the needle valve between mass flow meter and the organism, the needle valve is installed in the intake pipe.
By adopting the technical scheme, the mass flow meter can control the quantity of the silicon tetrahydride and the hydrogen entering the decomposition deposition cavity by matching with the needle valve.
Optionally, a vacuum gauge is mounted on the body and inserted into the decomposition deposition chamber.
By adopting the technical scheme, the vacuum gauge can detect the pressure in the decomposition and deposition cavity, so that the pressure in the decomposition and deposition cavity can be conveniently controlled.
Optionally, an inflation tube is installed on the machine body and connected with the decomposition and deposition cavity.
Through adopting above-mentioned technical scheme, the setting of gas tube can supply in the decomposition deposit chamber when bleeding too much to conveniently adjust the atmospheric pressure in the decomposition deposit chamber.
Optionally, the decomposition deposition cavity side wall is provided with a clamping assembly, and the clamping assembly clamps the installation frame.
Through adopting above-mentioned technical scheme, carry out the centre gripping through the centre gripping subassembly to the installing frame to make things convenient for the dismouting of installing frame.
Optionally, the centre gripping subassembly includes mount table, fixed plate and slide plate, the mount table sets firmly in decomposing the deposit intracavity, the fixed plate sets firmly on the mount table, fixed plate butt in installation frame bottom, the slide plate slides and sets up on the mount table, and the slide plate slides along organism direction of height, and the slide plate is through the butt top at installation frame bottom of sliding.
Through adopting above-mentioned technical scheme, through the cooperation fixed plate that slides of board that slides, can the different thickness's of centre gripping installing frames.
Optionally, a sliding groove is formed in the mounting table, a sliding block is fixedly arranged on the sliding plate, the sliding block is arranged in the sliding groove in a sliding mode, a spring is arranged in the sliding groove, one end of the spring abuts against the sliding block, the other end of the spring abuts against the sliding groove, and the spring drives the sliding plate to slide towards the direction of the fixing plate.
Through adopting above-mentioned technical scheme, the spout cooperation slider makes sliding of the board that slides more smooth, and the setting of spring can make the board centre gripping that slides on the installing frame through elasticity.
In summary, the present application includes at least one of the following beneficial technical effects:
1. by arranging the magnetic field in the direction opposite to the ion impact direction, when ions impact the gasket, the impact force of the ions is relieved through the reverse magnetic field, so that the probability of damage of the gasket due to overlarge ion impact force is reduced;
2. the magnetic field generator generates a magnetic field between the emitter and the heating platform, and the impact speed of ions is reduced through the magnetic field, so that the probability of damage of the lining due to overlarge ion impact force is reduced;
3. the mass flow meter can control the amount of the silicon hydride and the hydrogen entering the decomposition deposition cavity by matching with a needle valve;
4. the mounting frames with different thicknesses can be clamped by matching the sliding of the sliding plate with the fixed plate;
5. the sliding of the sliding plate is smoother by the aid of the sliding grooves matched with the sliding blocks, and the sliding plate can be clamped on the mounting frame through elastic force due to the arrangement of the springs.
Drawings
Fig. 1 is a sectional view of the entire structure of the present embodiment.
Fig. 2 is an enlarged view of a portion a in fig. 1.
Description of reference numerals: 1. a body; 2. decomposing the deposition chamber; 4. A transmitter; 5. a heating platform; 6. an air inlet pipe; 7. a magnetic field generator; 71. installing a frame; 72. an electromagnetic coil; 8. an exhaust pipe; 9. an exhaust apparatus; 10. a mass flow meter; 11. a needle valve; 12. a vacuum gauge tube; 13. an inflation tube; 14. a clamping assembly; 141. an installation table; 142. a fixing plate; 143. a slide plate; 15. a chute; 16. a slider; 17. a spring.
Detailed Description
The present application is described in further detail below with reference to figures 1-2.
The embodiment of the application discloses a perovskite epitaxial growth process, which comprises the following steps: s1: cutting the lining, namely cutting the lining with the required size according to the required size; s2: cleaning the gasket, cleaning the cut gasket by clear water, and drying the gasket after cleaning; s3: arranging a magnetic field, wherein the direction of the magnetic field is opposite to that of the ion impact lining in the machine body 1, and the thickness of the magnetic field is set according to the actual situation; s4: depositing and coating, namely depositing and coating the substrate through deposition equipment; s5: taking out the gasket, and taking out the gasket after the plating is finished; through setting up the magnetic field opposite with ion striking direction, when the ion was strikeed towards the facing, slowed down the impact force of ion through reverse magnetic field to reduce the facing and because of the too big probability that appears damaging of ion impact force.
The embodiment of the application discloses a deposition equipment for perovskite epitaxial growth technology, refer to fig. 1, including organism 1, decomposition deposition chamber 2 has been seted up on organism 1, open or the sealed 2 opening parts that close decomposition deposition chamber through the rotation of baffle 3, decomposition deposition chamber 2 top is provided with transmitter 4, transmitter 4 connects the radio frequency source, decomposition deposition chamber 2 bottom is provided with heating platform 5, heating platform 5 is the metal sheet, be provided with the electro-magnet in the metal sheet, generate heat through circular telegram for the electro-magnet, conduct heat to the metal sheet, carry out the heating of facing through the metal sheet to placing on the facing in the top, install intake pipe 6 on the organism 1, intake pipe 6 connects and communicates the transmitter 4 in the decomposition deposition chamber 2, intake pipe 6 keeps away from organism 1 one end and connects the silicon hydride air supply, be provided with magnetic field generator 7 in decomposition deposition chamber 2, magnetic field generator 7 sets up between transmitter 4 and heating platform 5, magnetic field generator 7 produces the magnetic field between transmitter 4 and heating platform 5, reduce the impact velocity of ion through the magnetic field, thereby reduce the probability that damage appears because of the too big impact force of ion.
Referring to fig. 1, an exhaust pipe 8 is installed on a machine body 1, the exhaust pipe 8 is connected with and communicated with a decomposition deposition cavity 2, one side, far away from the machine body 1, of the exhaust pipe 8 is connected with an exhaust device 9, and the exhaust device 9 is matched with the exhaust pipe 8 to perform air suction on the decomposition deposition cavity 2, so that the pressure in the decomposition deposition cavity 2 is adjusted; a mass flow meter 10 is arranged on the air inlet pipe 6, a needle valve 11 is arranged between the mass flow meter 10 and the machine body 1, the needle valve 11 is arranged on the air inlet pipe 6, and the mass flow meter 10 can control the amount of silicon tetrahydride and hydrogen entering the decomposition deposition cavity 2 by matching with the needle valve 11; a vacuum gauge 12 is arranged on the machine body 1, and the vacuum gauge 12 is inserted into the decomposition deposition cavity 2; the machine body 1 is provided with the gas-filled tube 13, the gas-filled tube 13 is connected and communicated with the decomposition and deposition cavity 2, and the vacuum gauge tube 12 can detect the pressure in the decomposition and deposition cavity 2, so that the pressure in the decomposition and deposition cavity 2 can be conveniently controlled.
Referring to fig. 1 and 2, the magnetic field generator 7 includes a mounting frame 71 detachably mounted in the decomposition deposition chamber 2 and an electromagnetic coil 72 mounted in the mounting frame 71, the mounting frame 71 is a rectangular frame body, three sides of the mounting frame 71 are respectively abutted to three inner side walls of the decomposition deposition chamber 2, the other side of the mounting frame 71 is abutted to the closed baffle 3, a groove body is formed in the inner side wall of the mounting frame 71, a battery coil is arranged in the mounting frame 71 in the groove body, a magnetic field is generated by electrifying the electromagnetic coil 72, the N pole of the magnetic field faces the emitter 4 by controlling the spiral orientation of the electromagnetic coil 72, so that the direction of the magnetic field is opposite to the direction of the ion impact on the gasket, thereby the impact force of ions on the gasket is reduced, the reverse magnetic force of the magnetic field cannot be greater than the impact force of the ions, and the situation that the ions cannot pass through the magnetic field is avoided.
Referring to fig. 1 and 2, the side wall of the decomposition deposition chamber 2 is provided with a clamping assembly 14, and the clamping assembly 14 clamps the installation frame 71; the clamping assembly 14 comprises an installation platform 141 fixedly arranged in the decomposition deposition cavity 2, a fixed plate 142 fixedly arranged on the installation platform 141 and a sliding plate 143 arranged on the installation platform 141 in a sliding manner, the fixed plate 142 abuts against the bottom of the installation frame 71, a sliding chute 15 is formed in the installation platform 141, a sliding block 16 is fixedly arranged on the sliding plate 143, the sliding block 16 is arranged in the sliding chute 15 in a sliding manner, the sliding plate 143 is matched with the sliding chute 15 through the sliding block 16 to slide along the height direction of the machine body 1, a spring 17 is arranged in the sliding chute 15, one end of the spring 17 abuts against the other end of the sliding block 16 and abuts against the sliding chute 15, and the spring 17 drives the sliding plate 143 to slide towards the direction of the fixed plate 142, so that the sliding plate 143 abuts against the top of the bottom of the installation frame 71 through sliding; the clamping assembly 14 is used for clamping the installation frame 71 to facilitate the assembly and disassembly of the installation frame 71, and the arrangement of the sliding plate 143 can be adjusted according to the thickness of the installation frame 71, so that the installation frames 71 with different thicknesses can be conveniently installed according to the area of a required magnetic field.
The implementation principle of the embodiment of the application is as follows: opening the decomposition deposition cavity 2, selecting a proper mounting frame 71 according to the area of a required magnetic field, mounting the mounting frame 71 in the decomposition deposition cavity 2 through a clamping assembly 14, then placing the cleaned and dried gasket on a heating platform 5 after penetrating through a machine body 1, starting heating equipment after exhausting air in a working cavity to a proper pressure through an exhaust device 9, simultaneously introducing silicon hydride gas to an emitter 4 and starting a radio frequency source, electrolyzing the silicon hydride gas in the emitter 4 and ejecting silicon ions towards the gasket, depositing and plating the silicon ions on the gasket after the silicon ions are decelerated through the magnetic field, and finishing deposition and plating.
The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.
Claims (10)
1. A perovskite epitaxial growth process comprises the following steps:
s1: cutting the lining, namely cutting the lining with the required size according to the required size;
s2: cleaning the gasket, and cleaning the cut gasket;
s3: arranging a magnetic field, wherein the magnetic field in the direction opposite to the direction of the ion impact lining is arranged in the machine body (1);
s4: depositing and coating, namely depositing and coating the substrate through deposition equipment;
s5: and taking out the gasket, and taking out the gasket after the plating is finished.
2. A deposition device for the perovskite epitaxial growth process according to claim 1, comprising a body (1), wherein a decomposition deposition cavity (2) is formed in the body (1), an emitter (4) is arranged at the top of the decomposition deposition cavity (2), a heating platform (5) is arranged at the bottom of the decomposition deposition cavity (2), an air inlet pipe (6) is mounted on the body (1), the air inlet pipe (6) is connected with and communicated with the emitter (4) in the decomposition deposition cavity (2), and the deposition device is characterized in that: a magnetic field generator (7) is arranged in the decomposition deposition cavity (2), and the magnetic field generator (7) is arranged between the emitter (4) and the heating platform (5).
3. A deposition apparatus for a perovskite epitaxial growth process according to claim 2, characterized in that: the magnetic field generator (7) comprises a mounting frame (71) and an electromagnetic coil (72), the mounting frame (71) is detachably mounted in the decomposition deposition cavity (2), and the electromagnetic coil (72) is mounted in the mounting frame (71).
4. A deposition apparatus for a perovskite epitaxial growth process according to claim 3, characterized in that: an exhaust pipe (8) is installed on the machine body (1), the exhaust pipe (8) is connected and communicated with the decomposition and deposition cavity (2), and one side, far away from the machine body (1), of the exhaust pipe (8) is connected with an exhaust device (9).
5. A deposition apparatus for a perovskite epitaxial growth process according to claim 4, characterized in that: install mass flow meter (10) on intake pipe (6), be provided with needle valve (11) between mass flow meter (10) and organism (1), install on intake pipe (6) needle valve (11).
6. A deposition apparatus for a perovskite epitaxial growth process according to claim 5, characterized in that: the machine body (1) is provided with a vacuum gauge pipe (12), and the vacuum gauge pipe (12) is inserted into the decomposition deposition cavity (2).
7. The deposition apparatus for perovskite epitaxial growth process according to claim 6, characterized in that: an inflation tube (13) is installed on the machine body (1), and the inflation tube (13) is connected and communicated with the decomposition and deposition cavity (2).
8. A deposition apparatus for a perovskite epitaxial growth process according to claim 7, characterized in that: the side wall of the decomposition deposition cavity (2) is provided with a clamping assembly (14), and the clamping assembly (14) clamps the installation frame (71).
9. A deposition apparatus for a perovskite epitaxial growth process as claimed in claim 8, wherein: the clamping assembly (14) comprises an installation table (141), a fixing plate (142) and a sliding plate (143), the installation table (141) is fixedly arranged in the decomposition deposition cavity (2), the fixing plate (142) is fixedly arranged on the installation table (141), the fixing plate (142) abuts against the bottom of the installation frame (71), the sliding plate (143) is arranged on the installation table (141) in a sliding mode, the sliding plate (143) slides along the height direction of the machine body (1), and the sliding plate (143) abuts against the top of the bottom of the installation frame (71) through sliding.
10. A deposition apparatus for a perovskite epitaxial growth process as claimed in claim 9, wherein: the mounting table (141) is provided with a sliding groove (15), the sliding plate (143) is fixedly provided with a sliding block (16), the sliding block (16) is arranged in the sliding groove (15) in a sliding mode, a spring (17) is arranged in the sliding groove (15), one end of the spring (17) is abutted to the other end of the sliding block (16) and is abutted to the sliding groove (15), and the spring (17) drives the sliding plate (143) to slide towards the direction of the fixing plate (142).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211235570.XA CN115537917A (en) | 2022-10-10 | 2022-10-10 | Perovskite epitaxial growth process and deposition equipment for process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211235570.XA CN115537917A (en) | 2022-10-10 | 2022-10-10 | Perovskite epitaxial growth process and deposition equipment for process |
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| Publication Number | Publication Date |
|---|---|
| CN115537917A true CN115537917A (en) | 2022-12-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211235570.XA Pending CN115537917A (en) | 2022-10-10 | 2022-10-10 | Perovskite epitaxial growth process and deposition equipment for process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438358A (en) * | 2003-02-13 | 2003-08-27 | 南开大学 | Low-wst technology for quickly growing silicon-base film |
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| CN1822317A (en) * | 1999-12-30 | 2006-08-23 | 兰姆研究有限公司 | Electrode subassembly |
| CN102206815A (en) * | 2010-03-30 | 2011-10-05 | 鸿富锦精密工业（深圳）有限公司 | Plasma film coating device |
| CN102486986A (en) * | 2010-12-03 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Plasma cleaning device |
| US20120325404A1 (en) * | 2011-06-24 | 2012-12-27 | Nissin Electric Co., Ltd. | Plasma processing apparatus |
| KR20140126518A (en) * | 2013-04-23 | 2014-10-31 | 참엔지니어링(주) | Substrate processing apparatus |
| CN106505010A (en) * | 2015-09-03 | 2017-03-15 | Ap系统股份有限公司 | Substrate-treating apparatus |
| CN114072535A (en) * | 2019-07-16 | 2022-02-18 | 应用材料公司 | EM source for enhanced plasma control |
-
2022
- 2022-10-10 CN CN202211235570.XA patent/CN115537917A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1822317A (en) * | 1999-12-30 | 2006-08-23 | 兰姆研究有限公司 | Electrode subassembly |
| CN1438358A (en) * | 2003-02-13 | 2003-08-27 | 南开大学 | Low-wst technology for quickly growing silicon-base film |
| CN1681092A (en) * | 2004-04-08 | 2005-10-12 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN102206815A (en) * | 2010-03-30 | 2011-10-05 | 鸿富锦精密工业（深圳）有限公司 | Plasma film coating device |
| CN102486986A (en) * | 2010-12-03 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Plasma cleaning device |
| US20120325404A1 (en) * | 2011-06-24 | 2012-12-27 | Nissin Electric Co., Ltd. | Plasma processing apparatus |
| KR20140126518A (en) * | 2013-04-23 | 2014-10-31 | 참엔지니어링(주) | Substrate processing apparatus |
| CN106505010A (en) * | 2015-09-03 | 2017-03-15 | Ap系统股份有限公司 | Substrate-treating apparatus |
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