CN115537080A - Carbon-based composite slurry for repairing cadmium telluride thin film sand hole and application thereof - Google Patents
Carbon-based composite slurry for repairing cadmium telluride thin film sand hole and application thereof Download PDFInfo
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- CN115537080A CN115537080A CN202211137531.6A CN202211137531A CN115537080A CN 115537080 A CN115537080 A CN 115537080A CN 202211137531 A CN202211137531 A CN 202211137531A CN 115537080 A CN115537080 A CN 115537080A
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 239000010409 thin film Substances 0.000 title claims abstract description 69
- 239000002002 slurry Substances 0.000 title claims abstract description 61
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 239000002131 composite material Substances 0.000 title claims abstract description 42
- 239000004576 sand Substances 0.000 title claims abstract description 35
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- 238000000034 method Methods 0.000 claims abstract description 39
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- 238000004528 spin coating Methods 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
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- 150000001875 compounds Chemical class 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 238000011049 filling Methods 0.000 claims description 10
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- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 4
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- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 2
- 239000011800 void material Substances 0.000 claims 3
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 claims 1
- 239000004147 Sorbitan trioleate Substances 0.000 claims 1
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- 229960000391 sorbitan trioleate Drugs 0.000 claims 1
- 235000019337 sorbitan trioleate Nutrition 0.000 claims 1
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- 238000012360 testing method Methods 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- ZBNRGEMZNWHCGA-PDKVEDEMSA-N [(2r)-2-[(2r,3r,4s)-3,4-bis[[(z)-octadec-9-enoyl]oxy]oxolan-2-yl]-2-hydroxyethyl] (z)-octadec-9-enoate Chemical group CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC ZBNRGEMZNWHCGA-PDKVEDEMSA-N 0.000 description 1
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- OEDMOCYNWLHUDP-UHFFFAOYSA-N bromomethanol Chemical compound OCBr OEDMOCYNWLHUDP-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
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- 238000005566 electron beam evaporation Methods 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/61—Additives non-macromolecular inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/63—Additives non-macromolecular organic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
- C08K2003/3009—Sulfides
- C08K2003/3027—Sulfides of cadmium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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Abstract
The invention discloses a carbon-based composite slurry for repairing a cadmium telluride thin film sand hole and application thereof, wherein the composite slurry comprises the following components in parts by mass: 5-20 parts of carbon powder, 5-20 parts of cadmium telluride powder, 10-20 parts of organic adhesive, 5-20 parts of surfactant, 1-5 parts of thixotropic agent and 5-10 parts of dispersing agent; the particle size of the carbon powder is 5-30 nm; the particle size of the cadmium telluride powder is 5 nm-20 nm. The invention solves the problems of low battery yield and high manufacturing cost caused by the fact that the prior art can not effectively make up for the sand holes or defects of the cadmium telluride thin film. The composite slurry can effectively fill and repair the sand holes, improve the yield of the solar cell and reduce the production cost. The method is simple and easy to implement, and the intermediate layer is formed by adopting a spin-coating method, so that good adhesive force can be obtained between the cadmium telluride thin film and the back contact layer prepared in the subsequent process.
Description
Technical Field
The invention belongs to the technical field of semiconductor materials, and particularly relates to carbon-based composite slurry for repairing cadmium telluride thin film sand holes and application thereof.
Background
The cadmium telluride thin film is of a polycrystalline structure, and gaps or clearances are easy to appear at grain boundaries in the preparation process. On the one hand, when the cadmium telluride film is thinned, these voids will penetrate directly through the film, creating voids that short out the entire device. On the other hand, with the increase of the thickness of the cadmium telluride thin film, the gaps are possibly filled and disappeared by the cadmium telluride deposited subsequently, but with the progress of the cadmium telluride deposited subsequently, the gaps are enlarged and interconnected to increase correspondingly, so that the inner part of the thin film has sand holes, even the defect of penetrating through the whole thickness is generated, when an electrode is manufactured at the later stage, a leakage channel is easy to generate, the bypass resistance of the cell is seriously influenced, the filling factor of the cell is reduced, and the photoelectric conversion efficiency of the cell is finally reduced.
The above problems can be solved by improving the thin film deposition technology or process, such as magnetron sputtering or epitaxy, or making the cadmium telluride thin film very thick (more than 8 microns), and obtaining a compact and uniform thin film to the maximum extent possible. However, these methods have low deposition rate and poor film crystalline quality, and cannot effectively compensate for the sand holes of the cadmium telluride film, resulting in low yield of the battery and high manufacturing cost.
Disclosure of Invention
The invention aims to provide a carbon-based composite slurry for repairing cadmium telluride thin film sand holes and application thereof. Solves the problems that the prior art can not effectively make up the sand holes or the defects of the cadmium telluride film, and the battery has low yield and high manufacturing cost.
In order to achieve the aim, the invention provides a carbon-based compound semiconductor composite slurry for repairing cadmium telluride thin film sand holes, which comprises the following components in parts by mass: 5-20 parts of carbon powder, 5-20 parts of cadmium telluride powder, 10-20 parts of organic adhesive, 5-20 parts of surfactant, 1-5 parts of thixotropic agent and 5-10 parts of dispersing agent; the purity of the carbon powder is more than 99.999 percent, and the purity of the cadmium telluride powder is more than 99.999 percent; the resistivity of the composite slurry is consistent with that of the cadmium telluride thin film to be repaired.
As the carbon powder and the cadmium telluride powder can not be gasified and taken away during later-stage curing, and finally remain in the cadmium telluride thin film and on the surface of the cadmium telluride thin film to be used as an additive of a semiconductor material, the guarantee of the purity of the carbon powder and the cadmium telluride powder is very critical.
The particle size of the carbon powder is 5-30 nm; the particle size of the cadmium telluride powder is 5 nm-20 nm.
The grain size of the carbon powder is 5 nm-30 nm, and the grain size of the cadmium telluride powder is 5 nm-20 nm, so that the effect of the filling material can be exerted. The particle size is too large and cannot enter the gap of the cadmium telluride thin film, so that the powder can only stay on the surface of the thin film and is not beneficial to the completion of the subsequent process; the smaller the particle size, the better, but the particles smaller than 5nm are difficult to produce, and on the other hand, are difficult to disperse, and easily form clusters, which is disadvantageous in that they do not enter the voids of the cadmium telluride thin film.
The invention provides a method for repairing cadmium telluride thin film sand holes by composite slurry, which comprises the following steps:
(1) Mixing an organic adhesive, a surfactant, a thixotropic agent and a dispersing agent to obtain a dissolving slurry, adding carbon powder and cadmium telluride powder into the dissolving slurry, mixing and dispersing to obtain a carbon-based compound semiconductor composite slurry;
(2) Uniformly spin-coating the carbon-based compound semiconductor composite slurry prepared in the step (1) on a cadmium telluride film, preserving heat at 60-100 ℃, then preserving heat at 180-220 ℃, finally heating to 350-400 ℃, dynamically vacuumizing in the process of heating to 350-400 ℃, wherein the dynamic vacuumizing process comprises the following steps: the processes of gas pumping and inert gas filling are repeated to remove the volatile gas in the curing process, and meanwhile, the inert gas atmosphere is kept, so that the semiconductor film is prevented from being polluted.
Preferably, the dynamic vacuum pumping is to pump the gas in the curing box to 1Pa by using a mechanical pump, fill nitrogen with the purity of 99.999% into the curing box to make the air pressure of the box reach 10KPa, pump out the nitrogen by using the mechanical pump to make the air pressure in the box reach 1Pa, and fill nitrogen with the purity of 99.999% to make the air pressure of the box reach 10KPa; repeating for more than three times, heating when the air pressure in the box body is 1Pa, and continuously filling nitrogen with the purity of 99.999% into the box body while the mechanical pump is in an air extraction state to make the air pressure in the box body always be 1Pa.
Preferably, the time of heat preservation at 60-100 ℃ is 10 minutes, and in order to remove water vapor, the semi-solidification of the slurry is realized.
Preferably, the incubation time is 20 minutes at 180 to 220 ℃ in order to exclude organic solvents, adhesives, activators, thixotropic agents and dispersing agents.
Preferably, the temperature is raised to 350-400 ℃ and the heat preservation time is 30 minutes, so that the cadmium telluride powder in the slurry is fully diffused and filled in the cadmium telluride thin film, and the filling repair of the cadmium telluride thin film sand holes is realized.
Preferably, the rotation speed of the spin coating is 100-2000 rpm. The rotating speed of the spin coater is related to the fluidity of the slurry, and under the same fluidity, the rotating speed is too low, the spin coating is not uniform, and the rotating speed is too high, so the slurry is easy to throw away.
The invention provides application of the carbon-based compound semiconductor composite slurry for repairing the cadmium telluride thin film sand hole in repairing the cadmium telluride thin film sand hole.
The invention relates to a carbon-based composite slurry for repairing cadmium telluride thin film sand holes and application thereof, which solves the problems of low battery yield and high manufacturing cost caused by the fact that the prior art can not effectively make up for the cadmium telluride thin film sand holes or defects, and has the following advantages:
1. the invention comprehensively considers the material system in direct contact with the cadmium telluride thin film in the solar cell and the characteristics thereof, and adopts the resistivity equivalent to that of the cadmium telluride thin film (the resistivity of the cadmium telluride thin film is about 10) on the basis of researching and analyzing the feasibility of the material characteristics serving as the sand hole filler 8 Omega cm, if the resistivity of the slurry is much smaller than that of cadmium telluride, short circuit can be caused), and the carbon-based compound semiconductor composite slurry with adjustable particle size and certain fluidity can effectively fill and repair the sand hole formed in the preparation process of the cadmium telluride thin film, thereby reducing the leakage channel of the solar cell, improving the yield of the cell and reducing the production cost.
2. The method is simple and easy to implement, and the intermediate layer can be formed by adopting the spin-coating method in the process of repairing the sand holes of the cadmium telluride thin film, so that good adhesive force can be obtained between the cadmium telluride thin film and the back contact layer prepared in the subsequent process.
Drawings
Fig. 1 is a schematic cross-sectional view of a cadmium telluride thin film repaired by using the composite paste prepared in example 1 of the present invention, wherein a is the composite paste prepared in example 1 of the present invention, B is the cadmium telluride thin film, and C is a substrate on which cadmium telluride is deposited.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The drugs and reagents and corresponding treatments used in the following examples of the invention:
1. the carbon powder is provided by Kaida company, the particle size is 100nm, and the purity is more than 99.999 percent; and repeatedly ball-milling the carbon powder by a ball mill, and sieving to obtain the powder with the superfine particle size of 5 nm-30 nm.
2. The cadmium telluride powder is provided by Kaida company, the grain size is about 100nm, and the purity is more than 99.999 percent; repeatedly ball-milling the cadmium telluride powder by a ball mill, and sieving to obtain the powder with the superfine grain diameter of 5 nm-20 nm.
3. The organic adhesive is mainly acrylic resin, is analytically pure, and is prepared by urban Congon chemical Co.
4. The surfactant is sorbitan trioleate (span 85) as a main component, S105180, purchased from science and technology Limited of the Duoding epoch.
5. The thixotropic agent is mainly castor oil, is analytically pure and is purchased from Duke chemical reagent factories.
6. The dispersant is mainly lauric acid, is analytically pure and is purchased from a chemical reagent factory of the municipal Kelong.
Example 1
A carbon-based compound semiconductor composite slurry for repairing cadmium telluride thin film blowholes comprises the following components in parts by mass: 5 parts of carbon powder (with the grain diameter of 5 nm), 5 parts of cadmium telluride powder (with the grain diameter of 5 nm), 10 parts of organic adhesive, 5 parts of surfactant, 1 part of thixotropic agent and 5 parts of dispersing agent.
The method for repairing the cadmium telluride thin film sand hole by using the carbon-based compound semiconductor composite slurry comprises the following steps:
(1) Mixing 10 parts of organic adhesive, 5 parts of surfactant, 1 part of thixotropic agent and 5 parts of dispersing agent to obtain a dissolving slurry, adding 5 parts of carbon powder and 5 parts of cadmium telluride powder into the dissolving slurry, mixing, and dispersing in an ultrasonic liquid to obtain carbon-based compound semiconductor composite slurry for repairing cadmium telluride thin film sand holes;
(2) And (2) uniformly spin-coating the carbon-based compound semiconductor composite slurry prepared in the step (1) on the cadmium telluride film by adopting a spin-coating method (the rotating speed of a spin coater is related to the fluidity of the slurry, the rotating speed of the spin coater is 100-2000 rpm), placing the cadmium telluride film spin-coated with the composite slurry into a drying box, firstly preserving heat for 10 minutes at 80 ℃, waiting for the slurry to be semi-solidified, then preserving heat for 20 minutes at 200 ℃, removing organic matters, finally heating to 350 ℃ and preserving heat for 30 minutes in a vacuum environment, so as to ensure that cadmium telluride powder in the slurry is fully diffused and filled in the cadmium telluride film, and realize filling and repairing of the sand holes of the cadmium telluride film.
The vacuum environment is realized in a dynamic breathing mode, namely, firstly, a mechanical pump is utilized to pump the gas in a curing box to 1Pa, then the curing box is filled with nitrogen with the purity of 99.999 percent to ensure that the air pressure of the box body reaches 10KPa, and then the mechanical pump is utilized to pump out the nitrogen to ensure that the air pressure in the box body reaches 1Pa; then, nitrogen with the purity of 99.999 percent is filled in to ensure that the air pressure of the box body reaches 10KPa, and then a mechanical pump is utilized to pump out the nitrogen to ensure that the air pressure in the box body reaches 1Pa; repeating the process for more than three times, and starting to heat up when the air pressure in the box body reaches 1Pa. In the process of temperature rise, nitrogen with the purity of 99.999 percent is filled into the box body at a certain flow rate, and the mechanical pump is always in an air extraction state, so that the air pressure in the curing box is always kept at 1Pa.
Example 2
A carbon-based compound semiconductor composite slurry for repairing a cadmium telluride thin film sand hole comprises the following components in parts by mass: 10 parts of carbon powder (with the particle size of 10 nm), 10 parts of cadmium telluride powder (with the particle size of 10 nm), 10 parts of organic adhesive, 5 parts of surfactant, 1 part of thixotropic agent and 5 parts of dispersing agent.
The method for repairing the sand holes of the cadmium telluride thin film by using the carbon-based compound semiconductor composite slurry is basically the same as the process of the embodiment 1, and the difference is that:
in the step (1), the mass parts of the carbon powder and the cadmium telluride powder are 10 parts.
And (3) placing the cadmium telluride thin film spin-coated with the composite slurry in a drying box, firstly preserving heat at 60 ℃ for 10 minutes until the slurry is semi-solidified, then preserving heat at 180 ℃ for 20 minutes, removing organic matters, and finally heating to 350 ℃ and preserving heat in a vacuum environment for 30 minutes to ensure that cadmium telluride powder in the slurry is fully diffused and filled in the cadmium telluride thin film, so that filling repair of sand holes of the cadmium telluride thin film is realized.
Example 3
A carbon-based compound semiconductor composite slurry for repairing a cadmium telluride thin film sand hole comprises the following components in parts by mass: 20 parts of carbon powder (with the particle size of 10 nm), 20 parts of cadmium telluride powder (with the particle size of 10 nm), 20 parts of organic adhesive, 20 parts of surfactant, 5 parts of thixotropic agent and 10 parts of dispersing agent.
The method for repairing the sand holes of the cadmium telluride thin film by using the carbon-based compound semiconductor composite slurry is basically the same as the process of the embodiment 1, and the difference is that:
in the step (1), the mass parts of the organic adhesive, the carbon powder, the surfactant and the cadmium telluride powder are all 20 parts, the mass part of the thixotropic agent is 5 parts, and the mass part of the dispersing agent is 10 parts;
and (3) placing the cadmium telluride thin film spin-coated with the composite slurry in a drying box, firstly preserving heat at 100 ℃ for 10 minutes until the slurry is semi-solidified, then preserving heat at 220 ℃ for 20 minutes, removing organic matters, and finally heating to 400 ℃ and preserving heat in a vacuum environment for 30 minutes to ensure that cadmium telluride powder in the slurry is fully diffused and filled in the cadmium telluride thin film, so that filling repair of sand holes of the cadmium telluride thin film is realized.
Example 4
A carbon-based compound semiconductor composite paste for repairing cadmium telluride thin film voids, which has substantially the same composition as in example 3 except that:
the grain size of the carbon powder is 30nm, and the grain size of the cadmium telluride powder is 20nm.
The method for repairing the sand holes of the cadmium telluride thin film by using the carbon-based compound semiconductor composite slurry is basically the same as the process of the embodiment 1, and the difference is that:
in the step (1), the grain size of the carbon powder is 30nm, and the grain size of the cadmium telluride powder is 20nm.
As shown in fig. 1, the composite slurry prepared in examples 1 to 4 of the present invention is used to repair a cadmium telluride thin film, wherein a is a substrate during deposition of cadmium telluride, B is the cadmium telluride thin film, and C is the slurry prepared in examples 1 to 4 of the present invention.
Experimental example 1 Property test of slurries prepared in examples 1 to 4 of the present invention
The process of the experiment is the process of manufacturing the solar cell, and the performance test result is the result of testing the cell efficiency. The experiment was set up with experimental and control groups. The specific operation of the experimental group was as follows: depositing a cadmium sulfide thin film with the thickness of 100nm on a transparent conductive thin film (ITO) with the thickness of 150nm by adopting a chemical water bath method, then depositing a cadmium telluride thin film with the thickness of 2-6 microns by adopting a near space sublimation method, filling the cadmium telluride thin film with the slurry prepared in the embodiments 1-4 of the invention, then carrying out cadmium chloride annealing treatment on the cadmium telluride thin film in an air atmosphere at 380 ℃ for half an hour, then corroding the cadmium telluride thin film for 4-6 seconds by using a bromomethanol solution with the concentration of 2 per thousand, and depositing ZnTe with the thickness of 100nm by adopting a vacuum thermal evaporation technology: and depositing a gold electrode with the thickness of 150nm on the Cu back contact layer by adopting an electron beam evaporation technology, and finally testing the photoelectric conversion efficiency of the cell by adopting a transient IV characteristic instrument. The control group did not use the slurries prepared in examples 1 to 4 of the present invention, and the other conditions were the same as those of the experimental group.
The experimental results are as follows:
in the control group, 16 solar cells were prepared without using the pastes prepared in examples 1 to 4 of the present invention, and 6 to 8 cells were short-circuited due to the presence of defects such as blisters.
An experimental group prepared 16 solar cells by using the slurry prepared in the embodiments 1 to 4 of the present invention, only 1 to 2 cells were short-circuited, the number of short-circuited cells was greatly reduced, and the photoelectric conversion efficiency was significantly improved.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (9)
1. The carbon-based compound semiconductor composite slurry for repairing the sand holes of the cadmium telluride thin film is characterized by comprising the following components in parts by mass:
the particle size of the carbon powder is 5-30 nm, and the purity is more than 99.999%;
the particle size of the cadmium telluride powder is 5 nm-20 nm, and the purity is more than 99.999%;
the resistivity of the composite slurry is consistent with that of the cadmium telluride thin film to be repaired.
2. The carbon-based compound semiconductor composite slurry for repairing a cadmium telluride thin film porosity as claimed in claim 1, wherein the organic binder is composed of an acrylic resin; the surfactant is composed of sorbitan trioleate; the thixotropic agent is castor oil; the dispersant comprises lauric acid.
3. A method of repairing a cadmium telluride thin film void as in claim 1 or 2 comprising:
(1) Mixing an organic adhesive, a surfactant, a thixotropic agent and a dispersing agent to obtain a dissolving slurry, adding carbon powder and cadmium telluride powder into the dissolving slurry, mixing and dispersing to obtain a carbon-based compound semiconductor composite slurry;
(2) Uniformly spin-coating the carbon-based compound semiconductor composite slurry prepared in the step (1) on a cadmium telluride thin film, preserving heat at 60-100 ℃, then preserving heat at 180-220 ℃, finally heating to 350-400 ℃, preserving heat, and dynamically vacuumizing in the process of heating to 350-400 ℃, wherein the dynamic vacuumizing process comprises the following steps: the process of gas extraction and inert gas filling is repeated to remove the volatile gas during the curing process while maintaining the inert gas atmosphere.
4. The method for repairing a cadmium telluride thin film blowhole by the composite slurry as set forth in claim 3, wherein the dynamic vacuum pumping is to pump the gas in the curing box to 1Pa by a mechanical pump, then fill nitrogen with a purity of 99.999% in the curing box to make the box gas pressure reach 10KPa, and then pump out the nitrogen by a mechanical pump to make the box gas pressure reach 1Pa, and then fill nitrogen with a purity of 99.999% to make the box gas pressure reach 10KPa; after repeating for a plurality of times, the temperature is raised when the air pressure in the box body is 1Pa, and in the process of raising the temperature, the mechanical pump is in an air exhaust state while nitrogen with the purity of 99.999 percent is continuously filled into the box body, so that the air pressure in the box is always 1Pa.
5. The method for repairing the sand hole of the cadmium telluride thin film by using the composite slurry as claimed in claim 3, wherein the heat preservation time at 60-100 ℃ is 10 minutes.
6. The method for repairing the sand hole of the cadmium telluride thin film by using the composite slurry as claimed in claim 3, wherein the heat preservation time at 180-220 ℃ is 20 minutes.
7. The method for repairing the sand hole of the cadmium telluride thin film by the composite slurry as claimed in claim 3, wherein the time for raising the temperature to 350-400 ℃ and maintaining the temperature is 30 minutes.
8. The method for repairing the sand hole of the cadmium telluride thin film by the composite slurry as claimed in claim 3, wherein the spin coating speed is 100-2000 rpm.
9. Use of a carbon-based compound semiconductor composite paste for repairing a cadmium telluride thin film void as defined in any one of claims 1 to 2 in repairing a cadmium telluride thin film void.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101159294A (en) * | 2007-11-23 | 2008-04-09 | 四川大学 | Cadmium telluride thin film used for solar cell and preparation method thereof |
| CN101931031A (en) * | 2010-07-22 | 2010-12-29 | 西交利物浦大学 | Manufacturing method of cadmium telluride film solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101159294A (en) * | 2007-11-23 | 2008-04-09 | 四川大学 | Cadmium telluride thin film used for solar cell and preparation method thereof |
| CN101931031A (en) * | 2010-07-22 | 2010-12-29 | 西交利物浦大学 | Manufacturing method of cadmium telluride film solar cell |
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Application publication date: 20221230 |