CN107452835B - A kind of heat treatment method of CdTe thin film - Google Patents
A kind of heat treatment method of CdTe thin film Download PDFInfo
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- CN107452835B CN107452835B CN201710568784.1A CN201710568784A CN107452835B CN 107452835 B CN107452835 B CN 107452835B CN 201710568784 A CN201710568784 A CN 201710568784A CN 107452835 B CN107452835 B CN 107452835B
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 115
- 239000010409 thin film Substances 0.000 title claims abstract description 63
- 238000010438 heat treatment Methods 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 38
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000005001 laminate film Substances 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000013021 overheating Methods 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of heat treatment methods of CdTe thin film.The heat treatment method is to be placed in CdTe thin film in phosphorous environment to be heat-treated；The CdTe thin film includes CdTe single thin film and the laminate film containing CdTe；The phosphorous environment is the presence that phosphorated material is kept in CdTe thin film heat treatment process, phosphorated material can be present in ambiance, phosphorated material can also be deposited directly to CdTe thin film surface；The temperature of the heat treatment is 300 DEG C~450 DEG C, and the time of heat treatment is 5~10 minutes.The electric property of CdTe thin film can be significantly improved using heat treatment method of the invention；CdTe thin film through Overheating Treatment is applied to CdTe thin film solar cell, the photoelectric properties of CdTe thin film solar cell can be significantly improved.
Description
Technical field
The invention belongs to Photovoltaic new energy material and devices field, in particular to a kind of heat treatment method of CdTe thin film.
Background technique
CdTe thin film solar cell is second largest product system of the current photovoltaic products in the market other than crystal silicon solar battery,
Have both high conversion efficiency and low cost, great researching value and market potential.CdTe is that a kind of II-VI group compound p-type is partly led
Body is widely paid close attention to as a kind of thin film solar cell material with application prospect.This is because the Liang great Te of CdTe
Property: firstly, its forbidden bandwidth is 1.45eV, optimal solar spectrum wave band is in the response of solar spectrum, is with CdTe
The unijunction thin film solar cell of absorbed layer can obtain higher transfer efficiency, and theoretical conversion efficiencies are up to 30%, at present its
Laboratory highest transfer efficiency reaches 22.1%；Secondly, the absorption coefficient of CdTe is up to 10 in visible-range5cm-1, sunlight
In 99% energy be higher than CdTe forbidden bandwidth photon can be absorbed in 2 microns of thick absorbed layers, CdTe is as absorbed layer
Solar cell, theoretically for absorbed layer required thickness in several microns, material consumption is few, and battery is at low cost.With otherization
It closes object battery to compare, such as CuInxGa1-xSe2(CIGS) solar cell, CdTe are binary compounds, and object is mutually relatively easy, prepares item
Part tolerance is high, can use the CdTe polycrystalline film that a variety of preparation methods obtain high quality.Laboratory prepares CdTe's at present
Method has close spaced sublimation method, electrochemical deposition method, gas-phase transport and deposition method, silk screen print method and magnetron sputtering method etc..Use this
The CdTe battery of a little method preparations obtains higher transfer efficiency.However, there is also objects by CdTe as solar cell material
Manage the deficiency of characteristic: the carrier concentration of CdTe is very low；The high work function of p-CdTe is difficult it and common metal back electricity
Pole forms ohm back contacts；It is prepared by the p-n heterojunction of high quality；Light loss of the incident light in Window layer；The diffusion of doped chemical
Influence etc. to stability test.
Defect in terms of CdTe polycrystalline film electrical properties is that limitation CdTe thin film solar cell device performance further mentions
One of the principal element risen.The defect of CdTe polycrystalline film electrical properties mainly includes two aspects: carrier concentration is low and carries
It is short to flow the sub- service life.Carrier concentration is low and its corresponding biggish resistivity (~104Ω cm) limit the light of CdTe device
Electric conversion performance also affects the realization of low resistance ohmic back contacts.The defects of CdTe thin film and crystal boundary make the longevity of carrier
Life is only several nanoseconds, and lower carrier lifetime limits the promotion of CdTe solar batteries.Too to CdTe thin film
For positive electricity pond, the subsequent heat treatment to CdTe thin film is to improve CdTe thin film electrical properties and device performance essential one
Step.Currently, the preparation of high efficiency CdTe thin film solar cell is all comprising the heat treatment procedure to CdTe thin film.Due to the heat treatment
To the remarkable effect of battery efficiency, this process is commonly known as ' the activation processing ' of high efficiency CdTe solar cell.Therefore, it opens
It sends out and the heat treatment method for optimizing CdTe thin film is of great significance to CdTe material electrical properties and raising device performance is improved.
Summary of the invention
The purpose of the present invention is to overcome the shortcomings of the existing technology and deficiency, provides a kind of heat treatment side of CdTe thin film
Method.
The purpose of the invention is achieved by the following technical solution: a kind of heat treatment method of CdTe thin film, by CdTe thin film
It is placed in phosphorous (P) environment and is heat-treated.
The CdTe thin film includes CdTe single thin film and more (folded) layer films containing CdTe；Preferably CdS/CdTe is folded
Layer film.
The phosphorous environment is the presence that phosphorated material is kept in CdTe thin film heat treatment process, can be by phosphorous material
Material is present in ambiance, and phosphorated material can also be deposited directly to CdTe thin film surface.
The phosphorated material includes phosphorus simple substance and phosphorus-containing compound；The phosphorated material preferably passes through any one of following institute
The mode stated provides:
(1) phosphorous thin layer is deposited on CdTe thin film surface；
(2) CdTe thin film is placed in phosphorous atmosphere；
(3) phosphorous thin layer is deposited on CdTe thin film surface, while be placed in phosphorous atmosphere.
The phosphorous thin layer with a thickness of 2~200nm, preferably 10~100nm.
It is preferably that the method for using vacuum thermal evaporation carries out the phosphorous thin layer of surface deposition that the surface, which deposits phosphorous thin layer,.
The pressure of the vacuum thermal evaporation is preferably less than 5 × 10-4Pa。
The phosphorus simple substance is preferably red phosphorus.
The phosphorus-containing compound is preferably metal phosphide；More preferably Cd3P2。
The heat treatment is preferably heat-treated in tube furnace.
The temperature of the heat treatment is preferably 300 DEG C~450 DEG C, more preferably 380 DEG C~400 DEG C.
The time of the heat treatment is preferably 5~10 minutes.
The heat treatment is the ring in vacuum, inert gas, oxygen-containing atmosphere or inert gas and the mixed atmosphere of oxygen
It is heat-treated in border.
Pressure in the vacuum environment is preferably 0.1~1Pa.
The inert gas is preferably nitrogen.
The mixed atmosphere of the inert gas and oxygen be preferably nitrogen and oxygen by volume 4:1 match it is mixed
Close atmosphere.
The heat treatment method of the CdTe thin film further includes cleaning the CdTe thin film after heat treatment, drying up.
The cleaning is to be carried out by the way of physics removing, to chemolysis or the deionized water flushing of phosphorated material
Cleaning；It is preferably cleaned by the way of deionized water flushing, keeps the surface CdTe after the completion of heat treatment no or few
Phosphorated material residual.
The physics removing preferably carries out surface bombardment to film surface using Ar ion gun.
The chemolysis to phosphorated material is the difference that soluble solvent is corresponded to for phosphorus simple substance or phosphorus-containing compound,
It selects different solvents to carry out dissolution cleaning, removes phosphate material remained on surface.
The drying preferably uses N2Drying.
The present invention has the following advantages and effects with respect to the prior art:
1, the heat treatment process of CdTe thin film has a major impact the photoelectric conversion performance for improving CdTe solar cell, this hair
A kind of new CdTe thin film heat treatment method is provided in bright, can be passivated the grain boundary defects of CdTe polycrystalline film, promotes CdTe
The recrystallization of film significantly improves the electric property of CdTe thin film, is applied to CdTe thin film solar cell, CdTe can be improved
The photoelectric properties of thin film solar cell.
2, the photoelectric conversion performance parameter (V for the CdTe solar cell being prepared in the present invention based on the heat treating processoc、
JscIt is significantly improved, can be used as at new heat compared with battery that is untreated and not being heat-treated under phosphorous (P) environment with FF)
Reason is used to prepare efficient CdTe solar cell preparation.
Detailed description of the invention
Fig. 1 is electric current-electricity under AM1.5G etalon optical power of CdTe thin film solar cell under the conditions of different disposal
Press (J-V) performance diagram.
Specific embodiment
Below with reference to embodiment, the present invention is described in further detail, and embodiments of the present invention are not limited thereto.
Embodiment 1
The present embodiment is to be placed in CdTe thin film in phosphorous (P) environment to be heat-treated and carried out subsequent cleaning, specific to wrap
Include following steps:
(1) vacuum thermal evaporation methods are used: using vacuum thermal evaporation equipment, CdS/CdTe laminate film is put in vacuum chamber
The substrate location of room, by Cd3P2It is put in PBN (pyrolytic boron nitride) crucible evaporation source, vacuum is evacuated to 5*10-4Pa is hereinafter, open
Substrate rotation is opened, substrate shutter is opened, heating evaporation source increases evaporation boat electric current to 80A, by Cd3P2It is evaporated to CdTe substrate table
Face, in the Cd that CdS/CdTe laminate film surface deposition thickness is 100nm3P2Thin layer.
(2) surface is deposited with Cd3P2The CdS/CdTe laminate film of thin layer is placed in N in tube furnace2It is heat-treated under atmosphere
(pressure: 0.1~1Pa), heat treatment temperature are 380 DEG C, and heat treatment time is 10 minutes, natural cooling after heat treatment.
(3) CdS/CdTe laminate film surface is rinsed using deionized water, then N2Drying, subsequent cleaning are intended to
So that the no or few phosphorated material in the surface CdTe after the completion of heat treatment remains.
Embodiment 2
The present embodiment is to be placed in CdTe thin film in phosphorous (P) environment to be heat-treated and carried out subsequent cleaning, specific to wrap
Include following steps:
(1) vacuum thermal evaporation methods are used: using vacuum thermal evaporation equipment, CdS/CdTe laminate film is put in vacuum chamber
The substrate location of room, by Cd3P2It is put in crucible evaporation source, vacuum is evacuated to 5*10-4Pa is hereinafter, open substrate rotation, opening
Substrate shutter, heating evaporation source increase evaporation boat electric current to 80A, by Cd3P2It is evaporated to CdTe substrate surface, it is folded in CdS/CdTe
Layer film surface deposition thickness is the Cd of 50nm3P2Thin layer.
(2) surface is deposited with Cd3P2The CdS/CdTe laminate film of thin layer, which is placed in vacuum tube furnace, to be heat-treated, and is passed through
Nitrogen oxygen atmosphere (is passed through the flow velocity N of gas2: O2=4:1) it is heat-treated that (presence of oxygen atmosphere can regulate and control the electricity of CdTe
Performance), heat-treating atmosphere pressure is 5kPa, and heat treatment temperature is 390 DEG C, and heat treatment time is 5 minutes, after heat treatment certainly
It is so cooling.
(3) CdS/CdTe laminate film surface is rinsed using deionized water, then N2Drying.
Embodiment 3
The present embodiment is to be placed in CdTe thin film in phosphorous (P) environment to be heat-treated and carried out subsequent cleaning, specific to wrap
Include following steps:
(1) downward by CdS/CdTe laminate film surface, it is placed on the silica ware for filling red phosphorus powder, CdS/CdTe is folded
Distance of the layer film surface away from red phosphorus is 5mm.
(2) the two is put into vacuum tube furnace (pressure: 0.1~1Pa) simultaneously, so that CdS/CdTe laminate film is wrapping
It is heat-treated under the atmosphere of phosphorous particle, heat treatment temperature is 400 DEG C, and heat treatment time is 5 minutes, naturally cold after heat treatment
But.Red phosphorus thin layer with a thickness of 10nm.
(3) CdS/CdTe laminate film surface is rinsed using deionized water, then N2Drying.
Effect example
1, (1) has structure to what the CdS/CdTe laminate film based on embodiment 1 obtained are as follows: glass/FTO/CdS/
The solar cell of CdTe/Au structure carries out photoelectric yield performance and is tested (the J-V test under AM1.5G etalon optical power: will be electric
Pond is placed under solar simulator, guarantees that incident intensity is that 1000W/m2 makes incident light from glass surface directive battery, measurement electricity
Current-voltage (J-V) curve of pond under light illumination), with the CdS/CdTe laminate film not being heat-treated and not in phosphorous ring
It is heat-treated under border, only in N2The CdS/CdTe laminate film (specific method reference implementation example 1) being heat-treated under atmosphere is comparison,
As a result as shown in Figure 1.
(2), by CdS/CdTe laminate film obtained in embodiment 1, the CdS/CdTe laminate film not being heat-treated
It is heat-treated not under phosphorous environment, only in N2CdS/CdTe laminate film (the specific method reference implementation being heat-treated under atmosphere
Example 1) it is respectively applied to CdTe solar cell, and test photoelectric conversion performance parameter (the AM1.5G standard light of CdTe solar cell
J-V test under by force), the results are shown in Table 1, in table: VocIt indicates open-circuit voltage (unit: mV), JscIndicate that short circuit current is close
Spend (unit mA/cm2), FF indicates fill factor (percentage), and Eff indicates photoelectric conversion efficiency (percentage)
The photoelectric conversion performance parameter (V of table 1CdTe solar celloc、Jsc, FF and Eff)
| VOC(mV) | JSC(mA/cm2) | FF (%) | Eff (%) | |
| Phosphorous heat treatment | 783 | 24.0 | 63.8 | 11.9 |
| It is not heat-treated | 571 | 12.7 | 52.1 | 3.78 |
| N2It is heat-treated under atmosphere | 624 | 19.2 | 51.0 | 6.11 |
From Fig. 1 and table 1 it can be seen that by carrying out the heat treatment under phosphorous environment to CdTe thin film, realize pair
The defect passivation of CdTe thin film, reduces defect concentration, significantly improves the open-circuit voltage V of batteryocAnd short-circuit current density
Jsc, improve the photoelectric conversion performance of battery.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (8)
1. a kind of heat treatment method of CdTe thin film, it is characterised in that: CdTe thin film is placed in phosphorous environment and is heat-treated；
The phosphorous environment is the presence that phosphorated material is kept in CdTe thin film heat treatment process；The phosphorated material is logical
It crosses following any mode to provide: (1) depositing phosphorous thin layer on CdTe thin film surface；(2) CdTe thin film is placed in phosphorous atmosphere
In；(3) phosphorous thin layer is deposited on CdTe thin film surface, while be placed in phosphorous atmosphere；
The phosphorated material is Cd3P2；
It is to carry out surface using the method for vacuum thermal evaporation to deposit phosphorous thin layer that the surface, which deposits phosphorous thin layer,；
The pressure of the vacuum thermal evaporation is lower than 5 × 10-4Pa；
The heat treatment is to be heat-treated in the environment of vacuum, inert gas or oxygen-containing atmosphere；
Pressure in the vacuum environment is 0.1~1Pa；
The temperature of the heat treatment is 380 DEG C~400 DEG C；
The time of the heat treatment is 5~10 minutes.
2. the heat treatment method of CdTe thin film according to claim 1, it is characterised in that:
The oxygen-containing atmosphere is the mixed atmosphere of inert gas and oxygen.
3. the heat treatment method of CdTe thin film according to claim 1, it is characterised in that: the thickness of the phosphorous thin layer
For 2~200nm.
4. the heat treatment method of CdTe thin film according to claim 1, it is characterised in that: the heat treatment is in tubular type
It is heat-treated in furnace.
5. the heat treatment method of CdTe thin film according to claim 1, it is characterised in that: the CdTe thin film is CdTe
Single thin film or laminate film containing CdTe.
6. the heat treatment method of CdTe thin film according to claim 1, it is characterised in that: the inert gas is nitrogen
Gas.
7. the heat treatment method of CdTe thin film according to claim 1, it is characterised in that further include after being heat-treated
CdTe thin film is cleaned, is dried up.
8. the heat treatment method of CdTe thin film according to claim 7, it is characterised in that: the cleaning is using physics
Removing, the mode rinsed to the chemolysis or deionized water of phosphorated material are cleaned.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143630A (en) * | 1994-06-09 | 2000-11-07 | Texas Instruments Incorporated | Method of impurity gettering |
| CN102142481A (en) * | 2009-12-16 | 2011-08-03 | 通用电气公司 | Method of P-type doping of cadmium telluride |
| CN104115289A (en) * | 2011-12-19 | 2014-10-22 | 通用电气公司 | Methods for annealing semicondcutor window layers |
| CN106711242A (en) * | 2017-01-17 | 2017-05-24 | 中国科学技术大学 | Cadmium telluride film solar cell and preparation method thereof |
-
2017
- 2017-07-13 CN CN201710568784.1A patent/CN107452835B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143630A (en) * | 1994-06-09 | 2000-11-07 | Texas Instruments Incorporated | Method of impurity gettering |
| CN102142481A (en) * | 2009-12-16 | 2011-08-03 | 通用电气公司 | Method of P-type doping of cadmium telluride |
| CN104115289A (en) * | 2011-12-19 | 2014-10-22 | 通用电气公司 | Methods for annealing semicondcutor window layers |
| CN106711242A (en) * | 2017-01-17 | 2017-05-24 | 中国科学技术大学 | Cadmium telluride film solar cell and preparation method thereof |
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