CN107452819A - A kind of copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction and preparation method thereof - Google Patents

A kind of copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction and preparation method thereof Download PDF

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Publication number
CN107452819A
CN107452819A CN201710900131.9A CN201710900131A CN107452819A CN 107452819 A CN107452819 A CN 107452819A CN 201710900131 A CN201710900131 A CN 201710900131A CN 107452819 A CN107452819 A CN 107452819A
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electrode
czts
film solar
sandwich construction
inert metal
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童正夫
刘志锋
韩长存
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Hubei University of Technology
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Hubei University of Technology
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The invention discloses copper-zinc-tin-sulfur film solar cell back electrode of a kind of sandwich construction and preparation method thereof, the sandwich construction is:Mo substrates (1~2 μm)/inert metal layer (10~500nm)/MoS2Layer (10~50nm).This method is first to prepare inert metal layer in Mo substrate surfaces, and MoS is formed through vulcanization after redeposited Mo layers2Layer, form Mo substrates/inert metal layer/MoS2The back electrode of the sandwich construction of layer.The back electrode of the sandwich construction can be applied in CZTS thin-film solar cells, it not only can effectively prevent the reaction between CZTS and Mo, the adhesive force between the stability and substrate and follow-up superstructure of CZTS thin-film solar cells is improved, MoS can also be realized2The accurate control of thickness degree, ensure Ohmic contact excellent between CZTS and back electrode, improve the charge-trapping ability of back electrode, improve the device performance of CZTS thin-film solar cells.

Description

A kind of copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction and its preparation Method
Technical field
The invention belongs to area of solar cell, and in particular to a kind of copper-zinc-tin-sulfur film solar cell of sandwich construction Back electrode and preparation method thereof.
Background technology
Copper-zinc-tin-sulfur (CZTS) thin-film solar cells is a kind of new solar cell, compared to silicon wafer and silicon thin film Solar cell, because its light absorption layer material Composition Abundance is high, and it is nontoxic the characteristics of, be very suitable for extensive, inexpensive open Hair utilizes, and is a kind of inorganic compound thin film solar cell of great competitiveness.The conventional device of CZTS thin-film solar cells Part structure is as follows:Mo/CZTS/CdS/i~ZnO/ITO/Ni~Al, the CZTS thin-film solar cells devices based on this structure Part efficiency has broken through 10%, reaches 12.7%, and this is the peak efficiency of CZTS based thin film solar cells so far.
Recent studies suggest that CZTS thin-film solar cells has great fault of construction, this fault of construction limits The further lifting of CZTS thin-film solar cells device efficiencies.Jonathan J.Scragg et al. research finds CZTS Film in annealing process, it is extremely unstable between Mo and CZTS layers, it may occur that following reaction:
Mo+2Cu2ZnSnS4→2Cu2S+2ZnS+2SnS+MoS2
Above-mentioned reaction can cause CZTS decomposition, destroy the structure of CZTS layers, produce more dephasign, influence light absorbing layer Performance, so as to cause the sharp-decay of device performance (Journal of the American Chemical society, 2012, volume 134, page 19330~19333).Further, since lattice constant mismatches between back of the body Mo substrates and CZTS films, CZTS demoulding is easily caused in the annealing process of CZTS films, and CZTS and Mo reaction can further aggravate CZTS's Demoulding.At present, Mo/ can be effectively passivated using the method that inert ceramic material barrier layer is inserted between Mo and CZTS films CZTS interfaces, suppress the decomposition even demoulding for the CZTS that CZTS and Mo reacts and triggered.But there is following ask in this method Topic:Barrier layer typically uses the inert ceramic material of poorly conductive for example:TiN、TiB2Deng although this kind of material can stop Reaction between CZTS and Mo, but due to TiN, TiB2Electric conductivity it is poor, limit collection process of the Mo substrates to electric charge (Chemistry of Materials, 2013, volume 25, page 3162~3171;APPLIED PHYSICS LETTERS, 2014, volume 105, page 051105~1~5);Secondly, TiN, TiB2The addition on this kind of barrier layer inhibits Mo substrate surfaces MoS2Generation, and relatively thin MoS2Contribute between CZTS light absorption layer materials and back of the body substrate to form Ohmic contact, promote CZTS The middle based transmission of electric charge.Based on above reason, the inactive ceramic of poorly conductive is inserted between Mo and CZTS films at present Material can increase the series resistance of CZTS thin-film solar cells, increase short circuit current, the performance of CZTS thin-film solar cells Improve simultaneously unobvious.
Therefore, how CZTS/Mo interfacial structures are rationally designed, is ensureing interface passivation effect, it is thin to improve CZTS The stability of film and its while the adhesiveness in Mo substrates, promote the transmission of interface charge, reduce CZTS thin film solars The series resistance of battery, short circuit current is improved, is urgent problem to be solved.
The content of the invention
In order to solve the above-mentioned technical problem, CZTS/Mo interface passivations in CZTS thin-film solar cells are realized, improve CZTS The stability of film and its adhesiveness in Mo substrates, while promote interface charge to transmit, reduce CZTS thin film solars electricity The series resistance in pond, improves short circuit current, and the present invention provides a kind of copper-zinc-tin-sulfur film solar cell back of the body electricity of sandwich construction Pole and preparation method thereof, it is specific as follows.
A kind of copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction, including three-decker, basalis are molybdenum layer, Inert metal layer and layer of molybdenum-disulfide are disposed with above basalis.
Above-mentioned base layer thickness is 1-2 μm, and inert metal thickness degree be 10~500nm, molybdenum sulfide thickness degree for 10~ 50nm。
Above-mentioned inert metal is selected from least one of platinum, gold, iridium, rhodium and palladium.
A kind of preparation method of the copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction, comprises the following steps:
(1) molybdenum is selected to deposit inert metal layer in its surface as basalis;
(2) molybdenum is deposited in inert metal layer surface;
(3) molybdenum deposited in inert metal layer surface is subjected to vulcanization and forms sulfuric horizon, that is, complete to prepare.
Above-mentioned inert metal is deposited as magnetron sputtering deposition, and deposition parameter is:50~150W of power, 0.1~5Pa of air pressure, 10~120s of sputtering time.
Above-mentioned molybdenum is deposited as magnetron sputtering deposition, and deposition parameter is:When 30~180W of power, 0.1~5Pa of air pressure, sputtering Between 10~100s.
Above-mentioned vulcanization uses the sulfur vapor to be as vulcanized gas, the curing parameter of the sulfuric horizon:Curing temperature 250~ 600 DEG C, 10~100 DEG C/s of heating rate, cure time 10s~60min, vulcanization air pressure 0.1~100kPa.
The key of the present invention is controllable deposition and the preparation of dense inert metal level and fine and close sulfuric horizon.It is lazy using densification Property metal level and MoS2CZTS and Mo basalises are completely cut off, the reaction between CZTS and Mo basalises is prevented, prevents CZTS Decompose demoulding and the thicker MoS of generation2.Meanwhile vulcanize molybdenum layer and prepared using controllable deposition method, accurately control MoS2It is thin The thickness of film is to ensure to form good Ohmic contact between back electrode and CZTS light absorbing layers.
Beneficial effects of the present invention:
1. effectively suppressing to react between back electrode and CZTS films, the stability and CZTS of CZTS films growth are improved Adhesiveness of the film on back electrode;
2. accurately control MoS2The thickness of film, ensure to form good Ohmic contact between back electrode and CZTS films.
Brief description of the drawings
Fig. 1 is the sandwich construction schematic diagram of the present invention.
Embodiment
With reference to specific embodiment, the present invention is further described, the complete not limited to this of present disclosure.
Embodiment 1
1μm Mo/10nm Au/10nm MoS2The preparation of the back electrode of structure:
1. 1 μm of Mo substrate glasses is placed on the cavity basal disc of magnetron sputtering deposition, 0.3Pa is evacuated to, opening is splashed The power supply I in inert metal Au sources is penetrated, sputtering power 100W is set, after glow discharge, baffle plate is opened, starts to sputter, sputtering time Power supply I and baffle plate are closed after 10s, completes the deposition of 10nm Au inert metal layers;
2. after the deposition for completing 10nm Au inert metal layers, using Ar gas cleaning chamber, 0.1Pa is evacuated to again, is beaten Sputtering Mo power supply II is opened, sputtering power 180W is set, power supply II and baffle plate is closed after sputtering time 10s, completes 10nm Mo layers Deposition;
3. the composite substrate that deposition has certain thickness Au and Mo is placed in curing tube, it is warming up to 50 DEG C/s speed 600 DEG C, air pressure 5kPa, the cure time 10s of sulphur S vapor atmospheres are controlled, completes 1 μm of Mo/10nm Au/10nm MoS2Structure The preparation of back electrode.
In 1 μm of Mo/10nm Au/10nm MoS2CZTS films are deposited on the back electrode of structure, are mutually detected except CZTS through thing Secondary phase generation is not observed beyond thing phase.
To in 1 μm of Mo/10nm Au/10nm MoS2CZTS films are deposited on the back electrode of structure and carry out constant rate of extension survey To characterize the adhesiveness of CZTS films, the Critical Cracking elongation of CZTS films is 0.15mm for examination.
In 1 μm of Mo/10nm Au/10nm MoS2CZTS thin-film solar cells is prepared on the back electrode of structure, is placed in AM 1.5 100W/cm2Simulated solar irradiation under detect battery performance, open-circuit voltage 570mV, short-circuit current density 14.3mA/cm2, fill out Fill the factor 0.58, battery efficiency 4.72%, 7.01 Ω of series resistance/cm2
Embodiment 2
1.5μm Mo/50nm Pt/50nm MoS2The preparation of structure back electrode:
1. 1.5 μm of Mo substrate glasses are placed on the cavity basal disc of magnetron sputtering deposition, 0.1Pa is evacuated to, is opened The power supply I in inert metal Pt sources is sputtered, sputtering power 150W is set, after glow discharge, baffle plate is opened, starts to sputter, during sputtering Between power supply I and baffle plate are closed after 20s, complete the deposition of 50nm Pt inert metal layers.
2. after the deposition for completing 50nm Pt inert metal layers, using Ar gas cleaning chamber, 2Pa is evacuated to again, is opened Mo power supply II is sputtered, sputtering power 30W is set, power supply II and baffle plate is closed after sputtering time 100s, completes 50nm Mo layers Deposition.
3. the composite substrate that deposition has certain thickness Pt and Mo is placed in curing tube, it is warming up to 10 DEG C/s speed 300 DEG C, air pressure 0.1k Pa, the cure time 60min of sulfur vapor atmosphere are controlled, completes 1.5 μm of Mo/50nm Pt/50nm MoS2The preparation of structure back electrode.
In 1.5 μm of Mo/50nm Pt/50nm MoS2CZTS films are deposited on the back electrode of structure, mutually detects and removes through thing Secondary phase generation is not observed beyond CZTS things phase.
To in 1.5 μm of Mo/50nm Pt/50nm MoS2CZTS films are deposited on the back electrode of structure and carry out constant rate of extension To characterize the adhesiveness of CZTS films, the Critical Cracking elongation of CZTS films is 0.17mm for test.
In 1.5 μm of Mo/50nm Pt/50nm MoS2CZTS thin-film solar cells is prepared on the back electrode of structure, is placed in AM 1.5 100W/cm2Simulated solar irradiation under detect battery performance, open-circuit voltage 562mV, short-circuit current density 13.7mA/ cm2, fill factor, curve factor 0.53, battery efficiency 4.08%, 8.49 Ω of series resistance/cm2
Embodiment 3
2μm Mo/500nm Pd/25nm MoS2The preparation of structure back electrode:
1. 2 μm of Mo substrate glasses are placed on the cavity basal disc of magnetron sputtering deposition, 5Pa is evacuated to, opens sputtering The power supply I in inert metal Pd sources, sputtering power 50W is set, after glow discharge, baffle plate is opened, starts to sputter, sputtering time 120s Power supply I and baffle plate are closed afterwards, complete the deposition of 500nm Pd inert metal layers;
2. after the deposition for completing 500nm Pd inert metal layers, using Ar gas cleaning chamber, 5Pa is evacuated to again, is beaten Sputtering Mo power supply II is opened, sputtering power 35W is set, power supply II and baffle plate is closed after sputtering time 40s, completes 25nm Mo layers Deposition;
3. the composite substrate that deposition has certain thickness Pd and Mo is placed in curing tube, it is warming up to 100 DEG C/s speed 250 DEG C, air pressure 100kPa, the cure time 30min of sulfur vapor atmosphere are controlled, completes 2 μm of Mo/500nm Pd/25nm MoS2 The preparation of structure back electrode.
In 2 μm of Mo/500nm Pd/25nm MoS2CZTS films are deposited on the back electrode of structure, mutually detects and removes through thing Secondary phase generation is not observed beyond CZTS things phase.
To in 2 μm of Mo/500nm Pd/25nm MoS2CZTS films are deposited on the back electrode of structure and carry out constant rate of extension survey To characterize the adhesiveness of CZTS films, the Critical Cracking elongation of CZTS films is 0.19mm for examination.
In 2 μm of Mo/500nm Pd/25nm MoS2CZTS thin film solar cells are prepared on the back electrode of structure, are placed in AM1.5 100W/cm2Simulated solar irradiation under detect battery performance, open-circuit voltage 573mV, short-circuit current density 14.1mA/cm2, Fill factor, curve factor 0.54, battery efficiency 4.36%, 7.96 Ω of series resistance/cm2
Embodiment 4
2μm Mo/500nm Rh/25nm MoS2The preparation of structure back electrode:
1. 2 μm of Mo substrate glasses are placed on the cavity basal disc of magnetron sputtering deposition, 5Pa is evacuated to, opens sputtering The power supply I in inert metal Rh sources, sputtering power 50W is set, after glow discharge, baffle plate is opened, starts to sputter, sputtering time 120s Power supply I and baffle plate are closed afterwards, complete the deposition of 500nm Rh inert metal layers;
2. after the deposition for completing 500nm Rh inert metal layers, using Ar gas cleaning chamber, 5Pa is evacuated to again, is beaten Sputtering Mo power supply II is opened, sputtering power 35W is set, power supply II and baffle plate is closed after sputtering time 40s, completes 25nm Mo layers Deposition;
3. the composite substrate that deposition has certain thickness Rh and Mo is placed in curing tube, it is warming up to 100 DEG C/s speed 250 DEG C, air pressure 100kPa, the cure time 30min of sulfur vapor atmosphere are controlled, completes 2 μm of Mo/500nm Rh/25nm MoS2 The preparation of structure back electrode.
In 2 μm of Mo/500nm Rh/25nm MoS2CZTS films are deposited on the back electrode of structure, mutually detects and removes through thing Secondary phase generation is not observed beyond CZTS things phase.
To in 2 μm of Mo/500nm Rh/25nm MoS2CZTS films are deposited on the back electrode of structure and carry out constant rate of extension survey To characterize the adhesiveness of CZTS films, the Critical Cracking elongation of CZTS films is 0.18mm for examination.
In 2 μm of Mo/500nm Rh/25nm MoS2CZTS thin-film solar cells is prepared on the back electrode of structure, is placed in AM 1.5 100W/cm2Simulated solar irradiation under detect battery performance, open-circuit voltage 570mV, short-circuit current density 13.9mA/ cm2, fill factor, curve factor 0.53, battery efficiency 4.20%, 8.01 Ω of series resistance/cm2
Embodiment 5
2 μm of Mo/250nm Pd, Ir alloys/10nm MoS2The preparation of structure back electrode:
1. 2 μm of Mo substrate glasses are placed on the cavity basal disc of magnetron sputtering deposition, 0.2Pa is evacuated to, opening is splashed The power supply I in inert metal Pt sources is penetrated, sputtering power 100W is set, while opens sputtering inert metal Ir power supply III, setting is splashed Power 75W is penetrated, after glow discharge, baffle plate is opened, starts to sputter, power supply I and baffle plate are closed after sputtering time 60s, complete 250nm The deposition of Pd, Ir alloy inert metal level;
2. after the deposition for completing 250nm Pd, Ir alloy inert metal levels, using Ar gas cleaning chamber, it is evacuated to again 0.1Pa, sputtering Mo power supply II is opened, sputtering power 180W is set, power supply II and baffle plate is closed after sputtering time 10s, completes The deposition of 10nm Mo layers;
3. the composite substrate that deposition has certain thickness Pd, Pt alloy and Mo is placed in curing tube, with 50 DEG C/s speed 300 DEG C are warming up to, controls air pressure 0.1kPa, the cure time 15min of sulfur vapor atmosphere, 2 μm of Mo/250nm Pd, Ir is completed and closes Gold/10nm MoS2The preparation of structure back electrode.
In 2 μm of Mo/250nm Pd, Ir alloys/10nm MoS2CZTS films are deposited on the back electrode of structure, are mutually examined through thing Survey and do not observe secondary phase generation in addition to CZTS thing phases.
To in 2 μm of Mo/250nm Pd, Ir alloys/10nm MoS2CZTS films are deposited on the back electrode of structure and carry out perseverance For fast extension test to characterize the adhesiveness of CZTS films, the Critical Cracking elongation of CZTS films is 0.17mm.
In 2 μm of Mo/250nm Pd, Ir alloys/10nm MoS2CZTS thin film solars electricity is prepared on the back electrode of structure Pond, it is placed in the 100W/cm of AM 1.52Simulated solar irradiation under detect battery performance, open-circuit voltage 575mV, short-circuit current density 15.7mA/cm2, fill factor, curve factor 0.55, battery efficiency 4.97%, 7.21 Ω of series resistance/cm2
Embodiment 6
2 μm of Mo/250nm Pd, Pt alloys/20nm MoS2The preparation of structure back electrode:
1. 2 μm of Mo substrate glasses are placed on the cavity basal disc of magnetron sputtering deposition, 0.2Pa is evacuated to, opening is splashed The power supply I in inert metal Pt sources is penetrated, sputtering power 100W is set, while opens sputtering inert metal Pd power supply III, setting is splashed Power 75W is penetrated, after glow discharge, baffle plate is opened, starts to sputter, power supply I and baffle plate are closed after sputtering time 60s, complete 250nm The deposition of Pd, Pt alloy inert metal level;
2. after the deposition for completing 250nm Pd, Pt alloy inert metal levels, using Ar gas cleaning chamber, it is evacuated to again 0.1Pa, sputtering Mo power supply II is opened, sputtering power 180W is set, power supply II and baffle plate is closed after sputtering time 20s, completes The deposition of 20nm Mo layers;
3. the composite substrate that deposition has certain thickness Pd, Pt alloy and Mo is placed in curing tube, with 50 DEG C/s speed 300 DEG C are warming up to, controls air pressure 5kPa, the cure time 15min of sulfur vapor atmosphere, 2 μm of Mo/250nm Pd, Pt is completed and closes Gold/20nm MoS2The preparation of structure back electrode.
In 2 μm of Mo/250nm Pd, Pt alloys/20nm MoS2CZTS films are deposited on the back electrode of structure, are mutually examined through thing Survey and do not observe secondary phase generation in addition to CZTS thing phases.
To in 2 μm of Mo/250nm Pd, Pt alloys/20nm MoS2CZTS films are deposited on the back electrode of structure and carry out perseverance For fast extension test to characterize the adhesiveness of CZTS films, the Critical Cracking elongation of CZTS films is 0.16mm.
In 2 μm of Mo/250nm Pd, Pt alloys/20nm MoS2CZTS thin film solars electricity is prepared on the back electrode of structure Pond, it is placed in the 100W/cm of AM 1.52Simulated solar irradiation under detect battery performance, open-circuit voltage 578mV, short-circuit current density 15.2mA/cm2, fill factor, curve factor 0.59, battery efficiency 5.18%, 6.93 Ω of series resistance/cm2
Comparative example 1
CZTS films are deposited on traditional Mo back electrodes, are mutually detected through thing in addition to CZTS thing phases it was additionally observed that Cu-S, Sn- The secondary phases such as S.
Constant rate of extension test is carried out to characterize the adhesiveness of CZTS films to depositing CZTS films on traditional Mo back electrodes, The Critical Cracking elongation of CZTS films is 0.10mm.
CZTS thin-film solar cells is prepared on traditional Mo back electrodes, is placed in the 100W/cm of AM 1.52Simulated solar Battery performance, open-circuit voltage 565mV, short-circuit current density 12mA/cm are detected under light2, fill factor, curve factor 0.50, battery efficiency 3.39%, 9.81 Ω of series resistance/cm2
The embodiment of table 1 is compared with the secondary phase and CZTS film Critical Cracking elongations of comparative example 1
Project Embodiment 1 Embodiment 2 Embodiment 3 Embodiment 4 Embodiment 5 Embodiment 6 Comparative example 1
Whether secondary phase is had Nothing Nothing Nothing Nothing Nothing Nothing Have
Critical Cracking elongation/mm 0.15 0.17 0.19 0.18 0.17 0.16 0.10
The embodiment of table 2 is compared with the solar cell device parameter of comparative example 1
Parameter Embodiment 1 Embodiment 2 Embodiment 3 Embodiment 4 Embodiment 5 Embodiment 6 Comparative example 1
Open-circuit voltage/mv 570 562 573 570 575 578 565
Short-circuit current density/mA/cm2 14.3 13.7 14.1 13.9 15.7 15.2 12.0
Fill factor, curve factor 0.58 0.53 0.54 0.53 0.55 0.59 0.50
Battery efficiency/% 4.72 4.08 4.36 4.20 4.97 5.18 3.39
Series resistance/Ω 7.01 8.49 7.96 8.01 7.21 6.93 9.81
Fig. 1 shows sandwich construction of the present invention, passes through Mo substrates/inert metal layer/MoS2The design of layer is to isolate Mo bases Bottom and CZTS.Above-mentioned table 1 can be seen that only comparative example 1 has secondary phase, show the electrode structure energy designed by the present invention Enough effectively act as isolating Mo basalises and CZTS and the effect for preventing the reaction between them, the test of Critical Cracking elongation As a result show that embodiment is superior to comparative example 1, adhesivenesses of the CZTS in embodiment is good.Each embodiment and comparative example back of the body in table 2 The test of the open-circuit voltage of solar cell, short-circuit current density, fill factor, curve factor, battery efficiency and series resistance prepared by electrode Data illustrate that back electrode of the invention is suitable with comparative example 1 on open-circuit voltage, and other specification is superior to contrast back electrode.

Claims (7)

  1. A kind of 1. copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction, it is characterised in that:Back electrode includes three-layered node Structure, basalis are molybdenum layer, and inert metal layer and layer of molybdenum-disulfide are disposed with above basalis.
  2. 2. the copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction according to claim 1, it is characterised in that:The back of the body Electrode basement thickness degree is 1-2 μm, and inert metal thickness degree is 10~500nm, and molybdenum sulfide thickness degree is 10~50nm.
  3. 3. the copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction according to claim 1 or 2, its feature exist In:The inert metal is selected from least one of platinum, gold, iridium, rhodium and palladium.
  4. A kind of 4. preparation method of the copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction, it is characterised in that including with Lower step:
    (1) molybdenum is selected to deposit inert metal layer in its surface as basalis;
    (2) molybdenum is deposited in inert metal layer surface;
    (3) molybdenum deposited in inert metal layer surface is subjected to vulcanization and forms sulfuric horizon, that is, complete to prepare.
  5. 5. the preparation method of the copper-zinc-tin-sulfur film solar cell back electrode of described sandwich construction is required according to right 4, its It is characterised by, the inert metal is deposited as magnetron sputtering deposition, and deposition parameter is:50~150W of power, 0.1~5Pa of air pressure, 10~120s of sputtering time.
  6. 6. the preparation method of the copper-zinc-tin-sulfur film solar cell back electrode of described sandwich construction is required according to right 4, its It is characterised by, the molybdenum is deposited as magnetron sputtering deposition, and deposition parameter is:When 30~180W of power, 0.1~5Pa of air pressure, sputtering Between 10~100s.
  7. 7. the preparation method of the copper-zinc-tin-sulfur film solar cell back electrode of described sandwich construction is required according to right 4, its It is characterised by, the vulcanization uses the sulfur vapor to be as vulcanized gas, the curing parameter of the sulfuric horizon:Curing temperature 250~ 600 DEG C, 10~100 DEG C/s of heating rate, cure time 10s~60min, vulcanization air pressure 0.1~100kPa.
CN201710900131.9A 2017-09-28 2017-09-28 A kind of copper-zinc-tin-sulfur film solar cell back electrode of sandwich construction and preparation method thereof Pending CN107452819A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108336177A (en) * 2017-12-20 2018-07-27 深圳先进技术研究院 A kind of copper-zinc-tin-sulfur film solar cell and preparation method thereof
CN109920862A (en) * 2019-01-11 2019-06-21 云南师范大学 It can inhibit MoS in copper-zinc-tin-sulfur film2The preformed layer structure and preparation method of layer
CN110459626A (en) * 2019-07-03 2019-11-15 中国科学院物理研究所 Regulate and control the method for copper-zinc-tin-sulfur (selenium) solar battery obsorbing layer back side crystallization

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