CN115513353A - Light emitting diode package with multiple test terminals and parallel elements - Google Patents
Light emitting diode package with multiple test terminals and parallel elements Download PDFInfo
- Publication number
- CN115513353A CN115513353A CN202110689943.XA CN202110689943A CN115513353A CN 115513353 A CN115513353 A CN 115513353A CN 202110689943 A CN202110689943 A CN 202110689943A CN 115513353 A CN115513353 A CN 115513353A
- Authority
- CN
- China
- Prior art keywords
- electrode
- carrier
- led
- main
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 114
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 238000012546 transfer Methods 0.000 claims description 11
- 239000008393 encapsulating agent Substances 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000012858 packaging process Methods 0.000 description 7
- 239000005022 packaging material Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000009517 secondary packaging Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The LED package with multiple test terminals and parallel elements comprises a package carrier and first, second and third position contacts for electrical test arranged on the package carrier, wherein the package carrier has an upper element plane and a lower SMD electrode plane, the upper element plane has a side edge provided with a first electrode of a main element, a second electrode of a sub-element, and a first electrode of the sub-element, wherein the first position contact for electrical test is electrically connected with the first electrode of the main element and the first electrode of the sub-element, the second position contact for electrical test is electrically connected with the second electrode of the sub-element, the third position contact for electrical test is electrically connected with the second electrode of the main element, the first and second electrodes of the main element and the middle thereof can be electrically connected with the LED die of the main element, the first and second electrodes of the sub-element and the middle thereof can be electrically connected with the parallel sub-element, and after the electrical connection, the respective electrical characteristics of the LED die of the main element and the parallel sub-element can be measured through the first, second and third position contacts for electrical test.
Description
Technical Field
The present invention relates to a package structure of a light emitting diode, and more particularly, to a light emitting diode package having multiple testing terminals and parallel devices.
Background
A Light Emitting Diode (LED), which is a light source that can generate high brightness using electron-hole recombination of a semiconductor. The product can be used for Gao Guangdu sterilization (ultraviolet light), vehicle headlights and taillights (blue-yellow-red light), projector light sources (blue-green-red light), infrared security detection (infrared light). In addition to high luminance and light emission density, excellent high power LED devices also require good reliability. Taking an automotive headlamp module as an example, night safety is affected once an LED fails, and even a trace of 1ppm fails under the high standard specification of automotive LEDs, improvement is needed in the automotive industry.
However, LEDs have various forms depending on the structure of the LED die. Besides the horizontal type crystal grains with lower cost, the covering crystal type and the vertical type high-power LED crystal grains with more complex process are also developed in the high-power large-size crystal grains. For example, U.S. Pat. No. 8,183,579 B2 discloses a die structure of a FLIP-CHIP type LED. For another example, U.S. Pat. No. 8,546,831 discloses a vertical LED die structure. Also, for example, US patent No. 8,319,250 discloses a multi-conductive column technology using a vertical LED, in which an N electrode is used as a bottom electrode and a plurality of vertical conductive columns with insulated sidewalls are extended to pass through a P-type semiconductor layer, a quantum well layer and enter the N-type semiconductor layer, so that a working current is uniformly distributed in the N-type semiconductor layer, and the P electrode is provided with a side for wire bonding in a packaging process.
At present, the failure mode of LED mainly lies in the leakage current (leakage current) generated by wafer defect, and also includes that during the packaging process, the semiconductor layer of the LED is pulled by the stress of the die bonding and electrode conduction process; or thermal stress in high temperature process, or micro-crack or film peeling caused by pulling of the packaging adhesive, resulting in larger leakage current, and thus failure of the package or reliability reduction.
Fig. 1 is a circuit diagram of a conventional package. As shown in fig. 2, which is a cross-sectional view of a conventional LED package structure, when an LED die 1 is SMD packaged, a P electrode 2 is bonded on a die bonding base 4 of a package carrier 3 through a carrier die bonding layer 4A, and an N electrode 5 is electrically connected to a wire bonding terminal 7 through a gold wire 6 by wire bonding, and the die bonding base 4 and the wire bonding terminal 7 are electrically connected to an Anode (Anode) 9A and a Cathode (Cathode) 9B on the other side of the package carrier 3 through conductive metals 8, respectively. The LED die 1 may be connected in parallel with a Zener diode (Zener diode) 1A to prevent damage to the components due to strong static electricity.
In order to meet the requirement of high reliability, the packaged LED die 1 can use the anode 9A and the cathode 9B as test contacts and cooperate with a test instrument for testing, so as to meet the high standard specification of the automotive LED.
However, when inspecting the LED die 1, if the device is severely failed, it can be found from the forward voltage Vf and the brightness, and if the semiconductor has micro-cracks, it can only be known from the reverse bias characteristics (e.g. Ir). However, after the LED die 1 is connected in parallel with the Zener diode 1A, the electrical characteristics (such as the leakage current Ir) under the reverse bias voltage cannot be measured; only the opto-electronic characteristics (e.g., luminance, wavelength and Vf) under forward bias operation can be measured, thereby reducing the reliability detectability of the LED die 1.
In addition to the zener diode 1A connected in parallel, the presence of other parallel sub-components in the circuit can interfere with the electrical measurement of the LED die 1. If the leakage current of the LED die 1 under the reverse bias condition cannot be accurately measured, the reliability of the LED die 1 after the packaging process and the evaluation of the aging test are greatly hindered.
Disclosure of Invention
Accordingly, the present invention is directed to a light emitting diode package having multiple testing terminals and parallel devices, which can measure the electrical characteristics of the main device light emitting diode die and the parallel sub-device after the main device light emitting diode die and the parallel sub-device are die-bonded.
The invention relates to a light emitting diode package with multiple test terminals and parallel elements, which is used for die bonding of a main element light emitting diode grain and a parallel auxiliary element. The package carrier has an upper component plane and a lower bottom SMD electrode plane on two sides, the upper component plane is provided with a main component first electrode, a main component second electrode, an auxiliary component first electrode and an auxiliary component second electrode, wherein the main component first electrode and the main component second electrode are electrically connected with the main component light emitting diode grain, and the auxiliary component first electrode and the auxiliary component second electrode are electrically connected with the parallel auxiliary component. The first electrical testing position contact is arranged on the package carrier plate and electrically connected with the first electrode of the main element and the first electrode of the auxiliary element, the second electrical testing position contact is arranged on the package carrier plate and electrically connected with the second electrode of the auxiliary element, and the third electrical testing position contact is arranged on the package carrier plate and electrically connected with the second electrode of the main element.
After the main element LED crystal grain and the parallel auxiliary element crystal grain are connected with the important process structure, the electric characteristics of the main element LED crystal grain and the parallel auxiliary element can be measured through the first, second and third position contacts of the electric test, and finally the second and third position contacts of the electric test are connected, the connection process is simple and safe, and the reliability of the main element LED crystal grain can be maintained.
Drawings
FIG. 1 is a circuit diagram of a conventional package;
FIG. 2 is a cross-sectional view of a conventional LED package structure;
fig. 3 is a schematic diagram of a front side structure of a package carrier of the present invention;
fig. 4 is a schematic view of a backside structure of a package carrier of the present invention;
FIG. 5 is a circuit diagram of the package structure of the present invention;
fig. 6 is a schematic diagram illustrating a front side structure of a package carrier according to an embodiment of the invention;
fig. 7 is a schematic cross-sectional view of a package structure according to an embodiment of the invention;
fig. 8 is a schematic cross-sectional view of another package structure according to an embodiment of the invention;
FIG. 9 is a first circuit diagram according to an embodiment of the present invention;
FIG. 10 is a circuit diagram illustrating a second exemplary embodiment of the present invention;
fig. 11 is a schematic view of a package carrier according to another embodiment of the invention;
fig. 12 is a schematic view of a package carrier structure according to another embodiment of the invention;
fig. 13 is a circuit diagram of a package structure according to another embodiment of the invention;
fig. 14 is a schematic view of a package carrier according to another embodiment of the invention.
Detailed Description
For a better understanding and appreciation of the features, objects, and advantages of the invention, reference should be made to the following description of the preferred embodiments taken in conjunction with the accompanying drawings, in which:
referring to fig. 3, 4 and 5, the present invention is a light emitting diode package with multiple testing terminals and parallel devices for mounting a main device light emitting diode die 10 and a parallel sub-device 11, which includes a package carrier 20, a first position contact 31 for electrical testing, a second position contact 32 for electrical testing, and a third position contact 33 for electrical testing.
Referring to fig. 6 and 7, the package carrier 20 has an upper device plane 21 and a lower bottom SMD electrode plane 22 located at two sides, the upper device plane 21 is disposed with a main device first electrode 41, a main device second electrode 42, an auxiliary device first electrode 43, and an auxiliary device second electrode 44, wherein the main device first electrode 41 and the main device second electrode 42 are used for die bonding the main device led die 10, the auxiliary device first electrode 43 and the auxiliary device second electrode 44 are used for die bonding the parallel auxiliary device 11, and the main device first electrode 41 and the auxiliary device first electrode 43 are electrically connected.
The electrical testing first position contact 31 is disposed on the package carrier 20 and electrically connects the main device first electrode 41 and the sub-device first electrode 43; the electrical testing second position contact 32 is disposed on the package carrier 20 and electrically connected to the second electrode 44 of the sub-component; the electrical testing third position contact 33 is disposed on the package carrier 20 and electrically connected to the main device second electrode 42.
In practical structure, the package carrier 20 may be a ceramic substrate (aluminum nitride, aluminum oxide, silicon carbide), a copper substrate, a BT (binary polyimide) board, or the like, and the package carrier 20 may be a single layer board or a multi-layer board. The electrical testing first position contact 31, the electrical testing second position contact 32 and the electrical testing third position contact 33 are disposed on the upper device plane 21. The lower bottom SMD electrode plane 22 is further provided with a carrier first external electrode 51, a carrier second external electrode 52 and a carrier transit electrode 53. The carrier first external electrode 51 is electrically connected to the main element first electrode 41, the sub-element first electrode 43 and the electrical test first position contact 31 through a first electrode via 61; the second external electrode 52 of the carrier is electrically connected to the second electrode 42 of the main device and the third position contact 33 of the electrical test by a second electrode via hole 62; the carrier transfer electrode 53 is electrically connected to the second electrode 44 of the sub-component and the second position contact 32 by a carrier transfer electrode via 63. The bottom SMD electrode plane 22 can also be provided with a height-increasing layer 54 (as shown in fig. 4), the height of the height-increasing layer 54 is equal to the height of the first external electrode 51 of the carrier, the height of the second external electrode 52 of the carrier and the height of the transfer electrode 53 of the carrier, so as to increase the requirement for meeting the following process.
In addition, the electrical testing first position contact 31, the main device first electrode 41 and the sub-device first electrode 43 can be electrically connected by using a metal conductive layer 64 (as depicted in fig. 7) embedded in the package carrier 20; the electrical testing second position contact 32 and the second electrode 44 of the sub-component can also be electrically connected by using the metal conductive layer 64 buried in the package carrier 20; the electrical connection between the electrical testing third position contact 33 and the main device second electrode 42 can also be electrically connected by using a metal conductive layer 64 (as illustrated in fig. 7) embedded in the package carrier 20. And the metal conductive layer 64 can also be formed on the upper device plane 21 of the package carrier 20 (as shown in fig. 6).
The main component led die 10 of the present invention may be any one selected from a horizontal led, a flip-chip led, a vertical led and a multi-pillar vertical led (e.g., US 8,319,250), and the main component led die 10 may be a single led die or a plurality of led dies connected in series to increase the brightness of the light emitted. The cross section of the package structure of the present invention is shown in fig. 7, the main component led die 10 is a vertical led, the main component led die 10 includes an uppermost N-type electrode 101 and a lowermost P-type electrode 102, the P-type electrode 102 is die-bonded to the main component second electrode 42 through a carrier die-bonding layer 103, and the N-type electrode 101 is wire-bonded to the main component first electrode 41 through a gold wire 65. The parallel sub-component 11 is selected from any one of zener diode, capacitor and led die to satisfy different functional requirements, and if the parallel sub-component 11 is an led die, the forward voltage (Vf) of the parallel sub-component 11 needs to be close to the forward voltage (Vf) of the main component led die 10. If the parallel sub-element 11 is a Zener diode, a Bi-directional Zener diode (Bi-directional Zener Diodes) may be used. Alternatively, a one-way Zener Diode (Zener Diode) is selected, and if the Zener Diode is a one-way Zener Diode (Zener Diode), the parallel sub-element 11 needs to be connected in parallel with the main-element led die 10 in an opposite polarity.
As shown in fig. 5, the led package circuit has 3 testing contacts, i.e., the electrical testing first position contact 31, the electrical testing second position contact 32, and the electrical testing third position contact 33. Wherein the electrical test first position contact 31 and the electrical test second position contact 32 are selected for testing, so as to test whether the parallel sub-device 11 operates normally. The electrical test first position contact 31 and the electrical test third position contact 33 are selected for testing, and the small current forward voltage Vf of the main component led die 10 and the accurate value of the leakage current of the main component led die 10 under the reverse bias condition can be measured in the presence of the parallel sub-component 11, and the cause of the reverse bias leakage current includes the expansion of semiconductor defects, the aging in a high temperature furnace, the application of ESD test, and the like.
After the testing is completed, the electrical testing second position contact 32 and the electrical testing third position contact 33 can be electrically connected together through a conductive metal 66. The conductive metal 66 can be formed by using a gold wire in a wire bonding process or by using a semiconductor film.
In order to protect the devices on the package carrier 20, after the testing is completed, as shown in fig. 7, the present invention may further include an encapsulant 70, wherein the encapsulant 70 covers the upper device plane 21 of the package carrier 20, so as to protect the devices on the package carrier 20, such as the main device led die 10, the electrical testing first location contact 31, the electrical testing second location contact 32, the electrical testing third location contact 33, the main device first electrode 41, the main device second electrode 42, the sub-device first electrode 43, the sub-device second electrode 44, and so on.
Referring to fig. 8, in another embodiment, the present invention may further include a first encapsulant 71 and a second encapsulant 72, which are formed by covering the main led die 10, the parallel sub-element 11, the main first electrode 41, the main second electrode 42, the sub-first electrode 43 and the sub-second electrode 44 with the first encapsulant 71.
Then, the electrical testing first position contact 31, the electrical testing second position contact 32 and the electrical testing third position contact 33 which are not packaged are used for testing, so as to solve the problem that the conventional packaging process is failed or unstable because the gold wire 65 is pulled by the packaging material to indirectly pull and damage the main component light emitting diode grain 10, and the main component light emitting diode grain 10 has micro cracks or film peeling.
After the testing is completed, the electrical testing second position contact 32 and the electrical testing third position contact 33 are electrically connected together through the conductive metal 66. Finally, the second packaging material 72 covers the conductive metal 66, the electrical test first position contact 31, the electrical test second position contact 32 and the electrical test third position contact 33, thereby completing the overall packaging process. In addition, if the main led die 10 fails, the second encapsulant 72 can be removed separately and the connecting wires 66 can be removed or broken, which will not damage the main led die 10, so that the cause of the failure can be detected again, and the actual cause of the failure can be easily and effectively detected.
Referring to fig. 9, in one embodiment, the electrical testing first position contact 31, the electrical testing second position contact 32 and the electrical testing third position contact 33 may be disposed on the lower bottom SMD electrode plane 22 of the package carrier 20. In practical structure, the first external electrode 51 of the carrier can be directly used as the first position contact 31 for electrical testing, the relay electrode 53 of the carrier can be used as the second position contact 32 for electrical testing, and the second external electrode 52 of the carrier can be used as the third position contact 33 for electrical testing. After the testing, the lower SMD electrode plane 22 of the package carrier 20 is covered on a circuit substrate 80, and the carrier second external electrodes 52 and the carrier transfer electrodes 53 are electrically connected to the lower SMD electrode plane 22 through a solder paste 81. Thus, a plurality of package carriers 20 can be arranged in parallel, and in this structure, the circuit substrate 80 has a plurality of circuit substrate extension electrodes 82 electrically connected to the carrier first external electrodes 51 and the carrier second external electrodes 52 of the plurality of package carriers 20, respectively, so as to meet the use requirements of the subsequent process.
Referring to fig. 10, in one embodiment, the carrier first external electrode 51, the carrier second external electrode 52 and the carrier relay electrode 53 may also extend to a circuit board upper plane 83 of the circuit board 80, and the carrier second external electrode 52 and the carrier relay electrode 53 are electrically connected to the circuit board upper plane 83 through a conductive film 81A.
In the above embodiments, the main led die 10 is a vertical led, but the invention can also be applied to a flip-chip led, a multi-conductive-pillar vertical led, and the like, as described below.
As shown in fig. 11, if the main led die 10A is a flip-chip led and the parallel sub-element 11A is a flip-chip led, the main led die 10A and the parallel sub-element 11A can be respectively flip-chip mounted on the package carrier 20.
Referring to fig. 12, if the main led die 10B is a multi-pillar vertical led and the parallel sub-element 11B is a capacitor, the N-type electrode (not shown) of the main led die 10B can be first die-bonded to the main first electrode 41, and the P-type electrode 102 of the main led die is then electrically connected to the main second electrode 42 by the gold wire 65 in a wire bonding manner. As shown in fig. 12, it only has the first electrode via hole 61 and the second electrode via hole 62, and the electrical testing second position contact 32 and the electrical testing third position contact 33 are electrically connected by a conductive metal 66 (wire bonding or metal film) after testing, so there is no via hole 63 in the carrier board.
Referring to fig. 13, which is a circuit diagram of a package structure according to another embodiment of the present invention, in the embodiment, the main device led die 10C may be a plurality of led dies 10C1, 10C2, and 10C3 connected in series. In other embodiments, the main component led die may be a plurality of led dies connected in parallel. In the present embodiment, for example, in fig. 13, the three LED dies 10C1, 10C2 and 10C3 connected in series can have the overall voltage (Vf) three times that of the single LED die and the light output three times that of the single LED die for the same forward current operation of the single LED die, and the overall voltage (Vf) of the LED dies 10C1, 10C2 and 10C3 (the main element LED die 10C) is three times that of the single LED die. Therefore, in the current package of the head lamp, a plurality of LED dies are commonly connected in series to obtain a higher light output at a higher voltage.
If some of the led dies 10C1, 10C2, and 10C3 are in series circuit, the leakage current is caused by damage, but if only one of the led dies 10C1, 10C2, and 10C3 in the series circuit is a good die, the leakage current of other damaged dies cannot be detected. Therefore, to improve the present drawback, an electrical test site contact 33B, 33C may be added between the different led dies 10C1, 10C2 and 10C3, respectively, as shown in fig. 13. The electrical testing position contact 33B is added between the led dies 10C1, 10C2, and the electrical testing position contact 33C is added between the led dies 10C2, 10C 3.
As shown in fig. 13, the leakage current characteristics of the led die 10C1 can be measured by measuring the electrical test third position contact 33 and the electrical test position contact 33B. The leakage current characteristics of the led die 10C2 can be measured by similarly measuring the electrical test site contact 33B and the electrical test site contact 33C. Similarly, the leakage current characteristics of the led die 10C3 can be measured by measuring the electrical test position contact 33C and the electrical test first position contact 31; this approach can be extended in the same manner if more LED dies are connected in series.
Fig. 14 is a schematic view of a package carrier according to another embodiment of the invention. In this embodiment, the led die 10C1 is die-bonded to a second electrode 42A of a main device die a, and the N electrode 12C1 of the led die 10C1 is connected to a P electrode terminal 42B1 of a die-bonding base of a second electrode 42B of a main device die B by wire bonding and is electrically connected to the electrical test position contact 33B.
The led die 10C2 is die bonded to the second electrode 42B of the main die B, and the N electrode 12C2 of the led die 10C2 is connected to a P electrode terminal 42C1 of a die bonding base of the second electrode 42C of the main die C by wire bonding and is electrically connected to the electrical test position contact 33C.
The light emitting diode grain 10C3 is fixed on the second electrode 42C of the main element grain C, the N electrode 12C3 of the light emitting diode grain 10C3 is connected to the first electrode 41 of the main element in a routing manner, and can be connected with the secondary element sodium-filled diode 11C in parallel.
The 5 test points of the package carrier of this embodiment include the electrical test first position contact 31, the electrical test second position contact 32, the electrical test third position contact 33, the electrical test position contact 33B and the electrical test position contact 33C, and can be measured by programming using 5 rows of probes.
As described above, the features of the present invention include at least:
1. the main element LED crystal grain can be a horizontal LED, a flip-chip LED, a vertical LED or a multi-conductive-column vertical LED, can be operated by a single LED crystal grain and a plurality of LED crystal grains connected in series, has wide application range and can meet the use requirements on packaging and testing.
2. The electrical characteristics of the main component light emitting diode grain and the parallel auxiliary component can be measured through the electrical test first, second and third position contacts, so as to improve the problem that the conventional main component light emitting diode grain can not test the reverse biased electrical characteristics (such as leakage current Ir) of the main component light emitting diode grain under the circuit with the parallel auxiliary component, so as to screen and detect the components damaged by the grain raw material defects and the mechanical force, the thermal stress and the electrostatic force in the packaging process, and maintain the reliability of the main component light emitting diode grain.
3. The first, second and third position contacts for electrical test can be arranged on the upper element plane or the lower SMD electrode plane of the package carrier plate, so as to satisfy the connection mode of various test contacts.
4. Through the secondary packaging design of the first packaging material and the second packaging material in segmented packaging, the problem that the performance of the element is reduced but the element cannot be detected due to the fact that the routing metal is pulled by the packaging material to indirectly pull and damage the main element LED crystal grain to form micro cracks or film peeling in the conventional packaging process can be solved.
5. When the secondary packaging is adopted, if the element fails, the second packaging material can be independently disassembled and the connecting lead can be removed or the connecting lead can be broken, so that the main element LED crystal grain can not be damaged, the secondary packaging can be detected again, and the true cause of the element failure can be simply and effectively found out.
Claims (19)
1. A light emitting diode package with multiple test terminals and parallel devices for die bonding a main device light emitting diode die and a parallel sub-device, comprising:
a package carrier having an upper device plane and a lower bottom SMD electrode plane, the upper device plane having a main device first electrode, a main device second electrode, an auxiliary device first electrode, and an auxiliary device second electrode, wherein the main device first electrode and the main device second electrode are used for die bonding of the main device LED die, the auxiliary device first electrode and the auxiliary device second electrode are used for die bonding of the parallel auxiliary device, and the main device first electrode and the auxiliary device first electrode are electrically connected;
an electrical test first position contact disposed on the package carrier and electrically connecting the first electrode of the main component and the first electrode of the sub-component;
an electrical test second position contact disposed on the package carrier and electrically connected to the second electrode of the sub-component;
and the electrical property test third position contact is arranged on the packaging carrier plate and is electrically connected with the second electrode of the main element.
2. The light emitting diode package of claim 1, wherein the electrical test first location contact, the electrical test second location contact and the electrical test third location contact are disposed on the upper device plane.
3. The led package according to claim 2, wherein a first external electrode of the carrier board, a second external electrode of the carrier board and a transfer electrode of the carrier board are further disposed on the bottom SMD electrode plane, and the first external electrode of the carrier board is electrically connected to the first electrode of the main component and the first electrode of the sub-component by a first electrode via hole, the second external electrode of the carrier board is electrically connected to the second electrode of the main component by a second electrode via hole, and the transfer electrode of the carrier board is electrically connected to the second electrode of the sub-component by a transfer electrode via hole of the carrier board.
4. The LED package of claim 2, wherein the electrical test second location contact and the electrical test third location contact are electrically connected together through a conductive metal.
5. The LED package according to claim 4, further comprising an encapsulant covering the upper device plane encapsulating the package carrier.
6. The LED package of claim 4, further comprising a first encapsulant covering the main LED die, the parallel sub-element, the main first electrode, the main second electrode, the sub-first electrode, and the sub-second electrode.
7. The LED package of claim 6, wherein the electrical test second location contact is electrically connected to the electrical test third location contact through a conductive metal.
8. The light emitting diode package of claim 7, further comprising a second encapsulant covering the conductive metal, the electrical test first location contact, the electrical test second location contact, and the electrical test third location contact.
9. The led package of claim 1, wherein the electrical test first location contact, the electrical test second location contact and the electrical test third location contact are disposed on the lower bottom SMD electrode plane.
10. The led package according to claim 9, wherein a first external carrier electrode, a second external carrier electrode and a transfer carrier electrode are further disposed on the bottom SMD electrode plane, and the first external carrier electrode is electrically connected to the first main element electrode and the first sub-element electrode through a first electrode via hole, the second external carrier electrode is electrically connected to the second main element electrode through a second electrode via hole, and the transfer carrier electrode is electrically connected to the second sub-element electrode through a transfer carrier electrode via hole.
11. The led package according to claim 10, wherein the lower bottom SMD electrode plane of the package carrier is covered on a circuit substrate, and the second external electrode of the carrier is electrically connected to the transfer electrode of the carrier at the lower bottom SMD electrode plane by a solder paste.
12. The led package according to claim 10, wherein the lower bottom SMD electrode plane of the package carrier is disposed on a circuit substrate, and the carrier first external electrode, the carrier second external electrode and the carrier relay electrode extend to a circuit substrate upper plane of the circuit substrate, and the carrier second external electrode and the carrier relay electrode are electrically connected through a conductive film at the circuit substrate upper plane.
13. The led package of claim 1, wherein the main led die is any one selected from the group consisting of a horizontal led, a flip-chip led, a vertical led and a multi-pillar vertical led.
14. The led package according to claim 1, wherein the package carrier is made of any one material selected from a ceramic substrate, a BT board, a copper substrate and a silicon carbide substrate.
15. The led package of claim 1, wherein the primary led die is a plurality of led dies connected in series.
16. The led package of claim 15, wherein an electrical test site contact is added between different led dies.
17. The led package of claim 1, wherein the main component led die is a plurality of led dies connected in parallel.
18. The LED package of claim 1, wherein the parallel sub-component is any one selected from a Zener diode, a capacitor and an LED die, and if the parallel sub-component is an LED die, the forward voltage of the parallel sub-component is similar to the forward voltage of the main component LED die.
19. The led package of claim 18, wherein the parallel sub-element is a zener diode and is unidirectional, the parallel sub-element connects the led die of the main element in parallel with opposite polarity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110689943.XA CN115513353A (en) | 2021-06-22 | 2021-06-22 | Light emitting diode package with multiple test terminals and parallel elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110689943.XA CN115513353A (en) | 2021-06-22 | 2021-06-22 | Light emitting diode package with multiple test terminals and parallel elements |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115513353A true CN115513353A (en) | 2022-12-23 |
Family
ID=84499115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110689943.XA Pending CN115513353A (en) | 2021-06-22 | 2021-06-22 | Light emitting diode package with multiple test terminals and parallel elements |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115513353A (en) |
-
2021
- 2021-06-22 CN CN202110689943.XA patent/CN115513353A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8357934B2 (en) | Semiconductor-based sub-mounts for optoelectronic devices with conductive paths | |
CN102237484B (en) | For the lead frame of light emitting device package, light emitting device package and illuminator | |
JP2018207125A (en) | Light-emitting element package | |
KR101711961B1 (en) | Light emitting device | |
JP2005209763A (en) | Light-emitting device and manufacturing method therefor | |
US8714778B2 (en) | Light-emitting diode (LED) module with light sensor configurations for optical feedback | |
US20120015463A1 (en) | Method for manufacturing light-emitting device | |
US11869817B2 (en) | Vertical light emitting diode chip package with electrical detection position | |
KR20080058724A (en) | A luminous element having numerous cells | |
US7982317B2 (en) | Semiconductor device, semiconductor device module, and method for manufacturing the semiconductor device module | |
JP7197645B1 (en) | Light emitting diode package with multiple test terminals and parallel connection components | |
TWI398971B (en) | Led package structure | |
WO2018186655A1 (en) | Semiconductor device and semiconductor device package including same | |
CN115513352A (en) | Vertical light-emitting diode crystal grain packaging body with electrical property detection position | |
CN115513353A (en) | Light emitting diode package with multiple test terminals and parallel elements | |
CN112798923A (en) | Light emitting diode wafer and light emitting diode wafer detection device and method | |
US11869816B2 (en) | LED package with multiple test pads and parallel circuit elements | |
TWI751953B (en) | Light-emitting diode package with multiple test terminals and parallel elements | |
EP4125126A1 (en) | Led package with multiple test pads and parallel circuit elements | |
JP7197646B1 (en) | Vertical light emitting diode chip package with electrical sensing position | |
TWI761232B (en) | Vertical light emitting diode die package with electrical detection position | |
EP4125139A1 (en) | Vertical light emitting diode chip package with electrical detection position | |
KR20120069290A (en) | Led package | |
JP2023032709A (en) | Light-emitting module | |
JP2008004665A (en) | Semiconductor light-emitting apparatus and lighting system using it |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |