CN115508595A - Probe pressure measuring device and method for four-probe tester - Google Patents
Probe pressure measuring device and method for four-probe tester Download PDFInfo
- Publication number
- CN115508595A CN115508595A CN202211200821.0A CN202211200821A CN115508595A CN 115508595 A CN115508595 A CN 115508595A CN 202211200821 A CN202211200821 A CN 202211200821A CN 115508595 A CN115508595 A CN 115508595A
- Authority
- CN
- China
- Prior art keywords
- probe
- pressure
- chip resistor
- resistance value
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention belongs to the field of automatic testing, and discloses a probe pressure measuring device and a method for a four-probe tester, wherein the device comprises an objective table, a control module and a probe testing module, wherein the probe testing module comprises a probe, a chip resistor and a cantilever frame, and the probe and the chip resistor are arranged at the lower end of the cantilever frame side by side and are positioned above a piece to be tested; the control module is used for controlling the probe to apply pressure to the piece to be tested; the object stage is used for placing a piece to be measured, and a piezoelectric sensor is arranged on the object stage and used for measuring the pressure applied by the probe to the piece to be measured; during operation, the probe presses the piece to be tested with different power, and homoenergetic drives the cantilever crane to take place the warp deformation of different degrees when pressing at every turn to make chip resistor also take place the deformation of different degrees, and then make chip resistor's resistance change differently.
Description
Technical Field
The invention belongs to the field of automatic testing, and particularly relates to a probe pressure measuring device and method for a four-probe tester.
Background
The wafer test is to perform a probe pressure test on each die on the chip, and test whether the electrical characteristics of the die are acceptable by the contact between the probe and the contact point in the die. During wafer testing, the die is placed on a stage opposite the wafer test probes in the wafer test system and aligned with a thin probe electrical tester, and the probes are brought into contact with each contact in the die, and the electrical tester is driven by a power supply to test and record the test results.
The four-probe technology is simple in principle, can eliminate the influence of contact resistance, and has high testing precision, so that the four-probe technology becomes one of the most extensive process monitoring means in a semiconductor production process. The method is widely applied to test items such as sheet resistance of silicon substrate sheets, epitaxial wafers, diffusion sheets, ion implantation sheets, gettering sheets, metal films, coatings and the like, and the process quality of the substrate, epitaxy, diffusion, ion implantation, gettering, annealing and the like of a film sample is controlled through resistance value testing. The conventional four-probe method is to press four probes arranged in a straight line perpendicularly on the surface of a sample to be measured at a certain pressure, measure the generated voltage, and calculate the resistivity, the resistance and the like of the sample according to corresponding formulas respectively according to different measurement modes and sizes of the sample. However, the measurement technique has large error of measured values, and resistance values obtained by multiple calculations are not accurate.
Disclosure of Invention
In view of the shortcomings of the prior art, it is an object of the present invention to provide a probe pressure measurement device and method for a four-probe tester.
In order to achieve the purpose, the invention provides a probe pressure measuring device for a four-probe tester, which comprises an object stage, a control module and a probe testing module, wherein the probe testing module comprises a probe, a chip resistor and a cantilever frame, and the probe and the chip resistor are arranged at the lower end of the cantilever frame side by side and are positioned above a piece to be tested; the control module is used for controlling the probe to apply pressure to the piece to be tested; the objective table is used for placing the piece to be measured, and a piezoelectric sensor is arranged on the objective table and used for measuring the pressure applied by the probe to the piece to be measured; during operation, the probe presses the piece to be tested with different forces, and the cantilever frame can be driven to generate warping deformation of different degrees during pressing at each time, so that the chip resistor also generates deformation of different degrees, and the resistance value of the chip resistor is changed differently.
Furthermore, the cantilever frame comprises a vertically arranged support frame and a horizontally arranged probe clamp, one end of the probe clamp is connected with the support frame, and the other end of the probe clamp is used for clamping the probe and enabling the probe to be positioned above the piece to be detected; the chip resistor is attached to the probe clamp, and the resistance value of the chip resistor can change along with the deformation of the probe clamp.
Further, the distance between the chip resistor and the connecting end of the probe clamp and the supporting frame is equal to the distance between the chip resistor and the clamping end of the probe clamp; preferably, the stage is rotatable through 360 °; more preferably, the probe clamp can move back and forth, up and down, and left and right on the support frame.
Further, the area of the chip resistor is the surface area of the probe clamp
To
According to another aspect of the present invention, there is also disclosed a probe pressure measuring method for a four-probe tester, which is characterized in that the measuring method can be implemented on a probe pressure measuring apparatus for a four-probe tester as described in any one of the preceding paragraphs, the measuring method comprising:
s1, a control module controls a probe to press a piece to be tested for multiple times according to preset pressure, and records a probe pressure value measured by a piezoelectric sensor and a change resistance value measured by a patch resistor during each pressing;
s2, the control module establishes a comparison relation between the probe pressure value measured each time and the change resistance value, and obtains a pressure resistance value comparison table based on the comparison relation;
s3, the control module controls the probe to press the wafer to be tested according to preset pressure, reads the resistance value of the chip resistor, and obtains real pressure corresponding to the resistance value based on the pressure resistance value comparison table;
s4, judging whether the real pressure deviates from the preset pressure: if the deviation is detected, adjusting the preset pressure and repeating the step S3; if not, the measurement is ended.
Further, the preset pressure is a corresponding pressure value obtained by equally dividing the measuring range of the piezoelectric sensor according to the pressing times; preferably, the number of pressing times is 6-8; more preferably, the measurement is stopped when a probe pressure value measured after any one pressing exceeds a maximum measurement value of the piezoelectric sensor.
Further, in step S1, the pressing is performed in the order of sequentially increasing the preset pressure, and the probe pressure value and the change resistance value of the chip resistor corresponding to each pressing are measured.
Further, in step S1, pressing is performed in the order of sequentially increasing the preset pressures, and an actual pressure value corresponding to each preset pressure and a variation resistance value of the chip resistor are measured; pressing according to the sequence that the preset pressures are sequentially decreased, and measuring an actual pressure value corresponding to each preset pressure and a change resistance value of the chip resistor; and then taking the average value of the two measured pressure values corresponding to each preset pressure as the probe pressure value, and taking the average value of the two variable resistance values corresponding to each preset pressure as the variable resistance value.
Further, in step S2, a smooth curve with the x-axis as the probe pressure value and the y-axis as the variation resistance value is fitted to the probe pressure value and the variation resistance value, so as to establish a comparison relationship.
Further, when the proportional range of the deviation value between the real pressure and the preset pressure value in the preset pressure value is within 2%, the deviation value is not deviated.
Compared with the prior art, the technical scheme of the invention mainly has the following advantages:
1. the probe pressure measuring device comprises an objective table, a control module and a probe testing module, wherein the probe testing module comprises a probe, a chip resistor and a cantilever frame; the control module is used for controlling the probe to apply pressure to the piece to be tested; the object stage is used for placing a piece to be measured, and a piezoelectric sensor is arranged on the object stage and used for measuring the pressure applied by the probe to the piece to be measured; during the measurement, the probe is pressed the piece that awaits measuring with predetermineeing pressure, and the homoenergetic drives the cantilever crane when pressing at every turn and takes place the warp deformation of different degrees to make rather than the paster resistance that sets up side by side also take place the deformation of different degrees, and then make the resistance of paster resistance change different, and can record the change resistance directly perceivedly.
2. The area of the chip resistor used by the probe pressure measuring device is not more than 2/3 of the effective area of the surface of the probe clamp, so that a certain operation space is ensured when the chip resistor sensor is installed and pasted, and the area of the chip resistor sensor is not less than 1/2 of the effective area of the probe clamp, so that the sensitivity of the chip resistor sensor during working is ensured, and the measured change resistance value is accurate. The objective table can rotate 360 degrees, the probe clamp can move along the front-back direction, the left-right direction and the up-down direction, the positions of the probe clamp and the objective table can be restored after each measurement, and the pasting position of the chip resistor is unchanged, so that the measurement accuracy of the chip resistor is improved, and the problems of large measurement result error and low accuracy in the prior art are solved.
3. According to the probe pressure measuring method, the probe is controlled by the control module to press a piece to be measured for multiple times according to preset pressure, and the probe pressure value measured by the piezoelectric sensor and the change resistance value measured by the chip resistor during each pressing are recorded; the control module establishes a comparison relation between the probe pressure value and the change resistance value measured each time, and obtains a pressure resistance value comparison table based on the comparison relation to finish the calibration of the resistance value; during actual testing, the control module controls the probe to press the wafer to be tested according to preset pressure, reads the resistance value of the chip resistor, and acquires an actual pressure value corresponding to the resistance value based on the calibrated pressure resistance value comparison table; and judging whether the real pressure value deviates from the corresponding preset pressure value, if so, readjusting the preset pressure for measuring again, and if not, finishing the measurement. In addition, in the invention, when the probe pressure value measured after any one time of pressing exceeds the maximum measurement value of the piezoelectric sensor, the measurement is stopped, thus improving the measurement efficiency.
4. According to the probe pressure measuring method, when a wafer is pressed, pressing is carried out according to the sequence of sequentially increasing preset pressure, and the actual pressure corresponding to each preset pressure and the change resistance value of a chip resistor are measured; pressing according to the descending order of the preset pressure, and measuring the actual pressure corresponding to each preset pressure and the change resistance value of the patch resistor; after the two-time measurement is finished, the average value of the two measured pressure values corresponding to each preset pressure is taken as a probe pressure value, and the average value of the two variable resistance values corresponding to each preset pressure is taken as a variable resistance value. And then fitting the probe pressure value and the variable resistance value to form a smooth curve with the x axis as the probe pressure value and the y axis as the variable resistance value, thereby establishing a more accurate numerical value comparison relation. Therefore, the measurement error is reduced to the greatest extent at each measured node, and the actual pressure value and the preset pressure value are not deviated when the deviation value of the actual pressure value and the preset pressure value is within 2 percent of the preset pressure value, and the difference between the actual pressure value corresponding to the resistance value measured by the measuring method and the preset pressure value is very small, so that the measurement precision requirement is met as long as the error is within 2 percent.
Drawings
FIG. 1 is a schematic structural diagram of a probe pressure measurement device disclosed in an embodiment of the invention;
FIG. 2 is a schematic diagram of a pressure resistance calibration method according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a probe pressure measurement method disclosed by the embodiment of the invention.
In the figure: the method comprises the following steps of 1-a support frame, 2-a probe, 3-a probe clamp, 4-a chip resistor, 5-an objective table, 6-a piece to be detected, 7-a piezoelectric sensor and 8-a guide rail frame.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
Example 1
As shown in fig. 1, the probe pressure measuring device for a four-probe tester provided in this embodiment includes an object stage 5, an external control module, and a probe testing module, where the probe testing module includes a probe 2, a chip resistor 4, and a cantilever frame, and the probe 22 and the chip resistor 4 are arranged side by side at the lower end of the cantilever frame and above a to-be-tested part 6; the control module is used for controlling the probe 2 to apply pressure to the piece to be tested 6; the objective table 5 is used for placing a piece to be measured 6, and is also provided with a piezoelectric sensor 7, wherein the piezoelectric sensor 7 is used for measuring the pressure applied by the probe 2 to the piece to be measured 6; during operation, the probe 2 presses the piece 6 to be tested with different forces, and the cantilever frame can be driven to generate buckling deformation in different degrees when the piece is pressed every time, so that the chip resistor 4 is also deformed in different degrees, and the resistance value of the chip resistor 4 is changed in different degrees.
As a preferred embodiment, the cantilever frame comprises a support frame 1 which is vertically arranged and a probe clamp 3 which is horizontally arranged, one end of the probe clamp 3 is connected with the support frame 1, and the other end of the probe clamp is used for clamping the probe 2 and enabling the probe 2 to be positioned above a piece to be tested 6; the chip resistor 4 is attached to the probe holder 3, and its resistance value can be changed along with the deformation of the probe holder 3.
As a preferred embodiment, the distance between the chip resistor 4 and the connecting end of the probe clamp 3 and the support frame 1 is equal to the distance between the chip resistor 4 and the clamping end of the probe clamp 3, so that the working sensitivity of the chip resistor can be ensured.
As the preferred embodiment, the objective table 5 can rotate 360 degrees, after the pressing measurement, the position of the objective table can be adjusted through the control module, so that the relative position between the piece to be measured 6 and the probe is restored, the probe clamp 3 can move up and down and left and right on the guide rail 8 under the driving of the support frame 1, and after the guide rail along the front-back direction is added on the guide rail 8, the probe clamp 3 can also move front and back.
Further, the area of the chip resistor 4 is the surface area of the probe holder 3
To
Sufficient installation space occasionally can be guaranteed in the installation of paster sensor to can glue tightly completely, can guarantee the sensitivity of its during operation again, guarantee that the change resistance that obtains of measurement is accurate.
The chip resistor sensor is arranged on the probe clamp through super glue (epoxy resin) and used for measuring the real-time pressure of the probe; the piezoelectric sensor is used for providing a standard pressure measurement value and conducting the standard pressure measurement value to the chip resistor sensor through a wire, and a conditioning circuit is arranged between the piezoelectric sensor and the chip resistor sensor and is responsible for supplying power to the chip resistor sensor and the piezoelectric sensor and extracting signals. The pressure generated by pressing the probe pressure measuring device is transmitted to the probe clamp to enable the probe clamp to generate buckling deformation, so that the chip resistor is driven to deform, the resistance value of the chip resistor is changed, and finally the resistance value can be converted into a voltage value through the conditioning circuit. The pressure applied by the probe and accurately measured by the piezoelectric sensor and the resistance change generated by the deformation of the chip resistor are processed by the control module to realize numerical value mapping, so that the calibration work of the pressure resistance is completed.
Example 2
As shown in fig. 1, the probe pressure measuring device for a four-probe tester provided in this embodiment includes an object stage 5, an external control module, a probe 2, a chip resistor 4, and a cantilever frame, wherein the probe 22 and the chip resistor 4 are fixed side by side on a probe fixture 3 at the lower end of the cantilever frame and are located right above a to-be-tested part 6, and the chip resistor 4 employs a chip resistor sensor with a sensitivity coefficient of 2; the control module is used for controlling the probe 2 to apply pressure to the piece to be tested 6 according to preset pressure; a piezoelectric sensor is also arranged on the objective table 5, and the piezoelectric sensor 7 is used for measuring the pressure applied by the probe 2 to the piece to be measured 6; during operation, the probe 2 presses the piece 6 to be tested with different forces, and the cantilever bracket can be driven to generate warping deformation in different degrees when the piece is pressed every time, so that the chip resistor 4 also generates deformation in different degrees, and the resistance value of the chip resistor 4 is changed differently.
As a preferred embodiment, the cantilever frame comprises a support frame 1 which is vertically arranged and a probe clamp 3 which is horizontally arranged, one end of the probe clamp 3 is connected with the support frame 1, and the other end of the probe clamp 3 is used for clamping the probe 2 and enabling the probe 2 to be positioned above a piece to be tested 6; the chip resistor 4 is attached to the probe holder 3, and its resistance value can be changed along with the deformation of the probe holder 3.
As a preferred embodiment, the distance between the chip resistor 4 and the connecting end of the probe clamp 3 and the support frame 1 is equal to the distance between the chip resistor 4 and the clamping end of the probe clamp 3, so that the working sensitivity of the chip resistor can be ensured.
As a preferred embodiment, the object stage 5 can rotate 360 degrees, after the pressing measurement, the position of the object stage can be adjusted through the control module, so that the relative position between the to-be-measured part 6 and the probe 2 is restored, the probe clamp 3 can move up and down and left and right on the guide rail 8 under the driving of the support frame 1, after the guide rail 8 is additionally provided with one guide rail along the front-back direction, the support frame 1 is provided with three moving paths, and then the probe clamp 3 is driven to move along the three paths.
In a preferred embodiment, the area of the chip resistor 4 is the surface area to which the probe holder 3 can be effectively attached
(i.e., removing the surface area occupied by the probe holder 2), can ensure complete adhesion of the patch sensor, and can alsoThe sensitivity of the device in working is ensured, and the accuracy of the measured change resistance is ensured.
Example 3
According to another aspect of the present invention, there is also disclosed a probe pressure measuring method for a four-probe tester, which can be implemented on a probe pressure measuring apparatus for a four-probe tester as described in any one of the preceding paragraphs, as shown in fig. 2 to 3, the measuring method comprising:
s1, a probe pressure measuring program for a four-probe tester is loaded on a control module, when the program is started, the probe 2 can be controlled to press a to-be-tested piece 6 for multiple times according to preset pressure, and the pressure value of the probe 2 measured by a piezoelectric sensor 7 and the change resistance value measured by a chip resistor 4 during each pressing are recorded;
the preset pressure is a corresponding pressure value obtained by equally dividing the measuring range of the piezoelectric sensor according to the pressing times, namely a plurality of preset pressures are in an arithmetic progression; the number of times of pressing the probe is 6-8, and the preferred number of times of pressing is 6 in the embodiment, so that enough data can be obtained, and the measuring time can be saved; in the measuring process, the preset pressure is not required to be completely pressed and tested, and the measurement is stopped as long as the measured probe pressure value exceeds the maximum measurement value of the piezoelectric sensor after any pressing;
s2, the control module establishes a comparison relation between the probe pressure value and the change resistance value measured each time, and obtains a pressure resistance value comparison table based on the comparison relation;
fitting the probe pressure value and the change resistance value to form a smooth curve with the x-axis direction as the probe pressure value and the y-axis direction as the change resistance value to establish a comparison relation, solving an approximation function by adopting a fitting interpolation method and the like on conventional numerical analysis software such as MATLAB and other software, obtaining a smooth transition curve of the approximation function, and obtaining a pressure resistance value comparison table consisting of a plurality of groups of pressure resistance value comparison arrays on the basis of the smooth transition curve:
TABLE 1 pressure resistance value comparison table
S3, the control module controls the probe 2 to press the wafer to be tested according to preset pressure, reads the resistance value of the chip resistor 4, and obtains real pressure corresponding to the read resistance value based on the pressure resistance value comparison array;
s4, judging whether the real pressure deviates from the preset pressure, wherein the real pressure and the preset pressure do not deviate when the deviation value of the real pressure and the preset pressure accounts for within 2% of the preset pressure: if the deviation is detected, adjusting the preset pressure and repeating the step S3; if the deviation does not exist, ending the measurement;
in this embodiment, a wafer to be tested is pressed by a preset pressure of 5N, and the resistance change Δ R of the chip resistor is read to be 31.5 Ω, and if the change Δ R corresponding to the pressure of 5N is found to be 32 Ω in table 1, the deviation value is 0.5 Ω, the calculated deviation ratio is 1.6%, and the deviation ratio is less than 2%, the test may be stopped, and 5N is the real pressure of the probe. In other embodiments, if the measured deviation ratio is greater than 2%, the preset pressure for the next test needs to be adjusted again until the difference between the real pressure and the preset pressure corresponding to the resistance change Δ R in table 1, which is obtained through the test, accounts for no more than 2% of the preset pressure, and the real pressure of the probe is obtained.
In a preferred embodiment, in step S1, the pressing is performed in a sequence of sequentially increasing preset pressures, and the probe pressure value and the change resistance value of the chip resistor 4 corresponding to each pressing are measured.
In a preferred embodiment, in step S1, pressing is performed in an order of sequentially increasing preset pressures, and a real pressure corresponding to each preset pressure and a change resistance value of the patch resistor 4 are measured; pressing according to the sequence that the preset pressures are sequentially decreased, and measuring the actual pressure corresponding to each preset pressure and the change resistance value of the chip resistor 4; then, the average value of the two measurement pressure values corresponding to each preset pressure is taken as a probe pressure value, and the average value of the two change resistance values corresponding to each preset pressure is taken as a change resistance value, so that the measured data are more accurate.
The above description is intended to be illustrative of the preferred embodiment of the present invention and should not be taken as limiting the invention, but rather, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (10)
1. A probe pressure measuring device for a four-probe tester is characterized by comprising an object stage, a control module and a probe testing module, wherein the probe testing module comprises a probe, a chip resistor and a cantilever frame, and the probe and the chip resistor are arranged at the lower end of the cantilever frame side by side and are positioned above a part to be tested; the control module is used for controlling the probe to apply pressure to the piece to be tested; the object stage is used for placing the piece to be measured, and a piezoelectric sensor is arranged on the object stage and used for measuring the pressure applied by the probe to the piece to be measured; during operation, the probe presses the piece to be detected with different forces, the cantilever frame can be driven to generate buckling deformation in different degrees when the piece to be detected is pressed every time, the chip resistor is enabled to generate deformation in different degrees, and then the resistance value of the chip resistor is enabled to be changed in different degrees.
2. The probe pressure measuring device for the four-probe tester as recited in claim 1, wherein the cantilever comprises a vertically arranged supporting frame and a horizontally arranged probe clamp, one end of the probe clamp is connected with the supporting frame, and the other end of the probe clamp is used for clamping the probe and positioning the probe above the piece to be tested; the chip resistor is attached to the probe clamp, and the resistance value of the chip resistor can change along with the deformation of the probe clamp.
3. The probe pressure measuring device for a four-probe tester as recited in claim 2, wherein a distance between the chip resistor and the connecting end of the probe holder and the supporting frame is equal to a distance between the chip resistor and the holding end of the probe holder; preferably, the stage is rotatable through 360 °; more preferably, the probe clamp can move back and forth, up and down and left and right on the support frame.
4. A probe pressure measuring device for a four probe tester according to any one of claims 1 to 3, wherein the area of the chip resistor is the surface area of the probe holder
To
5. A probe pressure measuring method for a four-probe tester, which can be implemented on a probe pressure measuring apparatus for a four-probe tester according to any one of claims 1 to 4, the measuring method comprising:
s1, a control module controls a probe to press a piece to be tested for multiple times according to preset pressure, and records a probe pressure value measured by a piezoelectric sensor and a change resistance value measured by a patch resistor during each pressing;
s2, the control module establishes a comparison relation between the probe pressure value measured each time and the change resistance value, and obtains a pressure resistance value comparison table based on the comparison relation;
s3, the control module controls the probe to press the wafer to be tested according to preset pressure, reads the resistance value of the chip resistor, and obtains real pressure corresponding to the resistance value based on the pressure resistance value comparison table;
s4, judging whether the real pressure deviates from the preset pressure: if the deviation is detected, adjusting the preset pressure and repeating the step S3; if not, the measurement is ended.
6. The probe pressure measuring method for a four-probe tester as claimed in claim 5, wherein the preset pressure is a corresponding pressure value obtained by equally dividing a measuring range of the piezoelectric sensor according to a number of pressing times; preferably, the number of pressing times is 6-8; more preferably, the measurement is stopped when a probe pressure value measured after any one pressing exceeds a maximum measurement value of the piezoelectric sensor.
7. The probe pressure measuring method for a four-probe tester according to claim 5, wherein in step S1, the pressing is performed in an order of sequentially increasing the preset pressure, and the probe pressure value and the variation resistance value corresponding to each pressing are measured.
8. The probe pressure measuring method for the four-probe tester as claimed in claim 5, wherein in step S1, the pressing is performed in an order of sequentially increasing the preset pressures, and an actual pressure value corresponding to each preset pressure and a variation resistance value of the chip resistor are measured; pressing according to the sequence that the preset pressures are sequentially decreased, and measuring an actual pressure value corresponding to each preset pressure and a change resistance value of the chip resistor; and then averaging two actual pressure values corresponding to each preset pressure to be used as the probe pressure value, and averaging two variable resistance values corresponding to each preset pressure to be used as the variable resistance value.
9. The method according to any one of claims 5 to 8, wherein in step S2, the probe pressure value and the variation resistance value are fitted to form a smooth curve with the x-axis as the probe pressure value and the y-axis as the variation resistance value, so as to establish the comparison relationship between the probe pressure value and the variation resistance value.
10. The probe pressure measuring method for a four-probe tester as recited in claim 5, wherein the deviation between the real pressure and the preset pressure is not deviated when the ratio of the real pressure to the preset pressure is within 2%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211200821.0A CN115508595A (en) | 2022-09-29 | 2022-09-29 | Probe pressure measuring device and method for four-probe tester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211200821.0A CN115508595A (en) | 2022-09-29 | 2022-09-29 | Probe pressure measuring device and method for four-probe tester |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115508595A true CN115508595A (en) | 2022-12-23 |
Family
ID=84509181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211200821.0A Pending CN115508595A (en) | 2022-09-29 | 2022-09-29 | Probe pressure measuring device and method for four-probe tester |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115508595A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117491849A (en) * | 2024-01-02 | 2024-02-02 | 沈阳松陵三航机械制造有限公司 | Automatic PCB testing system |
-
2022
- 2022-09-29 CN CN202211200821.0A patent/CN115508595A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117491849A (en) * | 2024-01-02 | 2024-02-02 | 沈阳松陵三航机械制造有限公司 | Automatic PCB testing system |
| CN117491849B (en) * | 2024-01-02 | 2024-04-26 | 萍乡市联锦成科技有限公司 | Automatic PCB testing system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200305913A (en) | Unified apparatus and method to assure probe card-to-wafer parallelism in semiconductor automatic wafer test, probe card measurement systems, and probe card manufacturing | |
| CN115508595A (en) | Probe pressure measuring device and method for four-probe tester | |
| CN103048087A (en) | Pressure sensor debugging system and debugging method thereof | |
| US20060205322A1 (en) | Chemical-mechanical planarization tool force calibration method and system | |
| EP1286389B1 (en) | Method and apparatus for testing semiconductor wafers | |
| US8169227B2 (en) | Probing apparatus with multiaxial stages for testing semiconductor devices | |
| CN102012461A (en) | Method for testing electrical resistivity of high-resistivity silicon | |
| CN106123939B (en) | A kind of magnetic suspension sensor rigidity testing system and test method | |
| CN113447798B (en) | Calibration method and calibration system of IC test machine and IC test device | |
| CN111203759B (en) | On-line calibration device and method for eddy current sensor machine tool | |
| CN219474836U (en) | Soft package battery detection device | |
| CN215677943U (en) | Rockwell hardness tester based on indentation depth | |
| CN115128523A (en) | Magnetic flux detection equipment and detection method | |
| CN115128522A (en) | Packaging structure, detection equipment and packaging precision control method of Hall probe | |
| JP2009145140A (en) | Friction measuring device | |
| CN215115524U (en) | Precise push-pull force testing device based on patch | |
| JP3022649B2 (en) | Semiconductor inspection equipment | |
| CN218066306U (en) | Multi-wafer size measuring equipment | |
| CN108226032A (en) | A kind of adhesion characteristics measuring method being applied between film and transparent substrates | |
| CN116804667B (en) | Method and device for evaluating oxygen polymerization inhibition performance of photo-cured product | |
| CN210173537U (en) | Marking device of automatic probe station | |
| CN220525889U (en) | Frock clamp of pole piece resistance tester | |
| CN115453197A (en) | Conducting film surface resistance test system | |
| CN117783673A (en) | Device and method for testing conductivity of proton exchange membrane under stretching state | |
| KR100262655B1 (en) | Alignment method and device of the wafer prober |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |