CN115505889A - Ultrahigh vacuum magnetron sputtering target and magnetron sputtering device - Google Patents
Ultrahigh vacuum magnetron sputtering target and magnetron sputtering device Download PDFInfo
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- CN115505889A CN115505889A CN202211218514.5A CN202211218514A CN115505889A CN 115505889 A CN115505889 A CN 115505889A CN 202211218514 A CN202211218514 A CN 202211218514A CN 115505889 A CN115505889 A CN 115505889A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 69
- 238000009434 installation Methods 0.000 claims abstract description 17
- 239000000110 cooling liquid Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 239000013077 target material Substances 0.000 claims description 23
- 239000000919 ceramic Substances 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- 229910000833 kovar Inorganic materials 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 210000003437 trachea Anatomy 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an ultrahigh vacuum magnetron sputtering target and a magnetron sputtering device, and relates to the technical field of magnetron sputtering. Wherein, the target head links to each other with the one end of branch, and the target head still links to each other with the power negative pole, and the target head is inside to be formed with the installation cavity. The base sets up in the installation cavity, and links to each other with the installation cavity diapire. The magnetic ring is arranged in the mounting cavity and is positioned on the base. The magnetic column is arranged in the installation cavity, is positioned on the base and is also positioned in the magnetic ring. The target is arranged on the outer surface of one side of the target head, which is far away from the supporting rod. Wherein, gaps are arranged among the upper surface of the magnetic ring, the upper surface of the magnetic column and the inner wall of the mounting cavity. And cooling liquid is introduced into the mounting cavity. The invention is used for coating equipment.
Description
Technical Field
The invention relates to the technical field of magnetron sputtering, in particular to an ultrahigh vacuum magnetron sputtering target and a magnetron sputtering device.
Background
Magnetron sputtering is one type of Physical Vapor Deposition (PVD). The magnetron sputtering method is used for preparing metal, alloy, compound, semiconductor, ceramic, dielectric composite film and other chemical reaction films, and is suitable for plating various single-layer films, multilayer films, doped film systems and alloy films on substrates. At present, the film manufactured by the magnetron sputtering method is widely used in a plurality of fields such as optics, mechanical processing and the like. Generally, the higher the ultimate vacuum degree of the film preparation equipment, the fewer the film defects, and the better the quality of the prepared film.
However, ultra-high vacuum equipment has strict conditions for its manufacturing process, and the sealing portion in the conventional magnetron sputtering target is often made of a rubber material and then joined. In the air exhaust process of high vacuum, the air release of the sealing ring and the failure of the sealing ring are easily caused, so that the ultrahigh vacuum condition cannot be achieved.
Disclosure of Invention
The embodiment of the invention provides an ultrahigh vacuum magnetron sputtering target and a magnetron sputtering device, which meet the sealing requirement of the magnetron sputtering target in a high vacuum state by improving the structure of a target head.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in one aspect, an embodiment of the present invention provides an ultrahigh vacuum magnetron sputtering target, which includes a support rod, a lifting assembly, a target head, a base, a magnetic ring, and a magnetic column. Wherein, lifting unit links to each other with branch for drive branch moves along the extending direction of branch. The target head is connected with one end of the support rod, the target head is also connected with a power supply cathode, and an installation cavity is formed inside the target head. The base sets up in the installation cavity, and links to each other with the installation cavity diapire. The magnetic ring is arranged in the mounting cavity and is positioned on the base. The magnetic column is arranged in the installation cavity, is positioned on the base and is also positioned in the magnetic ring. The target is arranged on the outer surface of one side of the target head, which is far away from the supporting rod. Wherein, gaps are arranged among the upper surface of the magnetic ring, the upper surface of the magnetic column and the inner wall of the mounting cavity. And cooling liquid is introduced into the mounting cavity.
In this case, the target head is connected with the supporting rod, and the supporting rod is also connected with the lifting assembly, so that the position of the target head relative to the substrate can be controlled through the lifting assembly, and the target head is located at the optimal sputtering position to achieve a better sputtering effect. The mounting cavity formed in the target head can be used for bearing the magnetic ring and the magnetic column, and a magnetic field is formed between the magnetic ring and the magnetic column. The base is electrified, ionized argon ions are accelerated to fly to the target under the action of an electric field, and bombard the surface of the target at high energy, so that the target is sputtered. During sputtering, since a large portion of the ion energy is converted into heat, if there is no or insufficient cooling, the heat will cause the target head to become too hot and melt the entire target. Therefore, gaps are formed among the upper surface of the magnetic ring, the upper surface of the magnetic column and the inner wall of the mounting cavity, and when the cooling liquid is introduced into the mounting cavity, the liquid flows in the space in the mounting cavity, so that the target head is cooled. In addition, in this application, the target head is whole welded structure, and inside formation installation cavity to can satisfy the requirement of super high vacuum.
Furthermore, the ultrahigh vacuum magnetron sputtering target also comprises an insulating part, wherein one end of the insulating part is connected with the target head, and the other end of the insulating part is connected with the supporting rod.
Furthermore, the insulating part comprises a first lantern ring, a ceramic ring and a second lantern ring, wherein one end of the first lantern ring is connected with one side, away from the target, of the target head and serves as one end, connected with the target head, of the insulating part. The ceramic ring is positioned on one side of the first sleeve ring, which is far away from the target head, and one end of the ceramic ring is connected with the other end of the first sleeve ring. One end of the second sleeve ring is connected with the other end of the ceramic ring; the other end of the second lantern ring is connected with the supporting rod and serves as the other end of the insulating piece connected with the supporting rod.
Further, the first sleeve ring and the second sleeve ring are made of kovar materials, and the ceramic ring is made of ceramic materials.
Furthermore, the ultrahigh vacuum magnetron sputtering target also comprises a baffle plate, a rotary cylinder and a magnetic coupling driver, wherein the baffle plate is arranged on one side of the target material far away from the target head and is used for exposing or covering the target material. The rotary cylinder has an output shaft. The magnetic coupling driver is connected with the output shaft, the magnetic coupling driver drives the transmission shaft in the vacuum cavity inside the magnetic coupling driver to rotate, and the baffle is connected with the transmission shaft.
Furthermore, the ultrahigh vacuum magnetron sputtering target also comprises a bracket, and the bracket is connected with the support rod in a sliding way.
Furthermore, the ultrahigh vacuum magnetron sputtering target also comprises a shielding cover, a flange and an air pipe, wherein the shielding cover is provided with an accommodating cavity and an opening communicated with one end of the accommodating cavity; the target head is positioned in the accommodating cavity, the target material is exposed out of the opening, and the baffle is arranged at the opening; the outer surface of the second collar is also connected to the shield. The flange is sleeved outside the support rod and connected with the support. The trachea spirals a plurality of bundles and is wound outside the supporting rod, and is positioned at one side of the flange close to the target head, argon is introduced into one end of the trachea, and the other end of the trachea is communicated with the installation cavity.
Furthermore, the ultrahigh vacuum magnetron sputtering target also comprises a water inlet pipe, a water outlet pipe and a water tank, wherein one end of the water inlet pipe is communicated with the space in the magnetic ring. One end of the water outlet pipe is communicated with the space between the base and the upper surface of the mounting cavity. The water tank is communicated with the other end of the water inlet pipe and the other end of the water outlet pipe and is used for providing cooling liquid.
Furthermore, the magnetic ring and the magnetic column are both magnetic steels, and the same side of the magnetic ring and the magnetic column is provided with opposite magnetic poles.
On the other hand, the invention also provides a magnetron sputtering device, which comprises the ultrahigh vacuum magnetron sputtering target, a vacuum chamber and a base station positioned in the vacuum chamber. Wherein, the base station is used for bearing the substrate, and the ultrahigh vacuum magnetron sputtering target is arranged opposite to the substrate.
Drawings
FIG. 1 is a schematic view of a magnetron sputtering apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of another magnetron sputtering apparatus provided in an embodiment of the invention;
FIG. 3 is a schematic diagram of the ultra-high vacuum magnetron sputtering target of FIG. 2 according to an embodiment of the present invention;
FIG. 4 is another schematic diagram of the ultra-high vacuum magnetron sputtering target of FIG. 2 according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of an ultra-high vacuum magnetron sputtering target provided by an embodiment of the invention;
FIG. 6 is a partially schematic illustration of the upper portion of FIG. 5 according to an embodiment of the present invention;
FIG. 7 is a schematic view of the cooling liquid flowing in the installation cavity according to the embodiment of the present invention;
fig. 8 is a schematic magnetic field diagram of a magnetic ring and a magnetic pillar provided in an embodiment of the present invention;
FIG. 9 is a schematic cross-sectional view of an insulator attached to a target head according to an embodiment of the present invention;
FIG. 10 is a schematic view of an insulator according to an embodiment of the present invention;
fig. 11 is a schematic cross-sectional view of fig. 10 according to an embodiment of the present invention.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be a mechanical connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
Magnetron sputtering is to introduce a magnetic field on the surface of a target cathode, and make electrons spirally run near the surface of the target by the interaction of the magnetic field and the electric field, so as to increase the probability of generating ions by the electrons impacting argon gas. The generated ions collide with the target surface under the action of the electric field so as to sputter the target material.
In this case, as shown in fig. 1, the present invention provides a magnetron sputtering apparatus 100 that may include an ultrahigh vacuum magnetron sputtering target 101, a vacuum chamber 102, and a base 103 located inside the vacuum chamber 102. Wherein, the base platform 103 is used for bearing the substrate 200, and the ultrahigh vacuum magnetron sputtering target 101 is oppositely arranged towards the substrate 200.
Thus, as shown in fig. 1, a closed cavity can be formed in the vacuum chamber 102, and the base 103 in the vacuum chamber 102 can be used for carrying the substrate 200, in some embodiments of the present application, the base 103 can be located at the bottom of the vacuum chamber 102, the ultra-high vacuum magnetron sputtering target 101 is located at the upper portion of the base 103 in the vacuum chamber 102, and the ultra-high vacuum magnetron sputtering target 101 faces the base 103. In other embodiments of the present application, as shown in fig. 2, the base platform 103 may also be located at the top inside the vacuum chamber 102, the ultra-high vacuum magnetron sputtering target 101 is located at the bottom of the base platform 103 inside the vacuum chamber 102, and the ultra-high vacuum magnetron sputtering target 101 faces the base platform 103, and at this time, the ultra-high vacuum magnetron sputtering target 101 may be loaded with a liquid target material. In the present application, the positions of the ultrahigh vacuum magnetron sputtering target 101 and the base 103 in the vacuum chamber 102 are not limited, and the ultrahigh vacuum magnetron sputtering target 101 may be directed to the base 103. In the present application, the number of the ultrahigh vacuum magnetron sputtering targets 101 is not limited, and may be one, or may be plural, for example, three in fig. 1 and 2, and the user may set the number according to the needs.
The embodiment of the present invention may also provide a magnetron sputtering method using the magnetron sputtering apparatus 100, which may include the following steps:
(1) The substrate 200 is cleaned, the target is mounted, the vacuum chamber 102 is closed, and the inside of the vacuum chamber 102 is evacuated.
(2) Carrying out pre-sputtering;
(3) The distance between the ultrahigh vacuum magnetron sputtering target 101 and the substrate 200 is adjusted through the lifting assembly;
(4) And introducing gas to perform magnetron sputtering.
The above-mentioned ultra-high vacuum magnetron sputtering target 101 is exemplified below, for example, in some embodiments of the present application, as shown in fig. 3, the ultra-high vacuum magnetron sputtering target 101 may include a target body 1, a lifting assembly 2, a support rod 3, and a bracket 4. Wherein, lifting unit 2 is fixed on support 4, and lifting unit 2 links to each other with branch 3 for drive branch 3 moves relative to support 4 along the extending direction of branch 3. The target body 1 is connected to the supporting rod 3, so that the position of the target body 1 relative to the substrate 200 can be controlled by the lifting assembly 2, and the target body 1 is located at the optimal sputtering position to achieve better sputtering effect.
The structure of the above-mentioned lifting assembly 2 is exemplified below, for example, in some embodiments of the present application, as shown in fig. 4, the ultrahigh vacuum magnetron sputtering target further includes a bracket 4, and the lifting assembly 2 may include a motor 21, a lead screw 22 and a lifting block 23, wherein the motor 21 is fixed on the bracket 4, and the motor 21 has a rotating shaft. The lead screw 22 is coaxially connected to the rotating shaft. Threaded holes are formed in the lifting block 23, the lifting block 23 is sleeved on the lead screw 22, and the outer surface of the lifting block 23 is connected with the supporting rod 3. The motor 21 is used for driving the lead screw 22 to rotate, so that the lifting block 23 is lifted to drive the supporting rod 3 to move relative to the bracket 4. The lifting assembly 2 can ensure that the target body 1 can realize normal and efficient stroke adjustment work.
In some embodiments of the present application, as shown in fig. 4, the ultrahigh vacuum magnetron sputtering target 101 may further include a flange 5, a gas pipe 6, and a shield can 11, wherein the shield can 11 has a receiving cavity 111 and an opening (not shown in fig. 4) communicating with one end of the receiving cavity 111. The flange 5 is sleeved outside the support rod 3 and connected with the support 4. The gas pipe 6 is coiled a plurality of bundles and wound outside the support rod 3, and is positioned at one side of the flange 5 close to the shielding cover 11, one end of the gas pipe 6 is introduced with argon, and the other end of the gas pipe is communicated with the accommodating cavity 111.
In this case, the gas output from the gas supply tube 6 is collected in the shield case 11 and then spread to the opening with the target, thereby achieving high-quality film deposition. The air pipe 6 coiled outside the flange 5 can elastically extend or contract within a certain range, so that the stroke adjustment of the target body 1 can be matched, and the normal working state of the ultrahigh vacuum magnetron sputtering target 101 is ensured.
In order to prevent the target material from being contaminated, in some embodiments of the present application, as shown in fig. 5, the ultrahigh vacuum magnetron sputtering target 101 may further include a baffle plate 7, a rotary cylinder 8 and a magnetic coupling driver 9, wherein the baffle plate 7 is disposed on a side of the target material away from the target head 12 for exposing or covering the target material, and the target material may be mounted at a shown in fig. 5. The rotary cylinder 8 has an output shaft. The magnetic coupling driver 9 is connected with the output shaft, the magnetic coupling driver 9 drives the transmission shaft in the vacuum cavity inside the magnetic coupling driver to rotate, and the baffle 7 is connected with the transmission shaft.
Thus, as shown in fig. 5, pre-sputtering may be performed before magnetron sputtering, in which the shutter 7 is located above the target head 12, and in the pre-sputtering, impurities and the like on the surface of the target may be sputtered to the side of the shutter 7 close to the target, so that the side of the target close to the shutter 7 is cleaner, and then the shutter 7 is swung to expose the target by driving the rotary cylinder 8 and sputtered toward the substrate 200. In other embodiments of the present application, if there are multiple ultrahigh vacuum magnetron sputtering targets 101 in the vacuum chamber 102, the baffle 7 of an idle sputtering target can be swung to shield its target material if there are multiple sputtering targets idle, so as to prevent the target material on the sputtering target from being contaminated when other target materials are sputtered.
The above-mentioned target body 1 is exemplified below, for example, in some embodiments of the present application, as shown in fig. 6, the target body 1 may include a target head 12, a base 13, a magnetic ring 14, and a magnetic column 15 in addition to the above-mentioned shield 11. Wherein, the target head 12 is connected with one end of the support rod 3, the target head 12 is also connected with a power supply cathode, and a mounting cavity 121 is formed inside the target head 12. The base 13 is disposed in the mounting cavity 121 and connected to the bottom wall of the mounting cavity 121. The magnetic ring 14 is disposed in the mounting cavity 121 and located on the base 13. The magnetic column 15 is disposed in the mounting cavity 121, and is located on the base 13 and also located in the magnetic ring 14. The target material is arranged on the outer surface of the target head 12 at the side far away from the supporting rod 3. Gaps are formed among the upper surface of the magnetic ring 14, the upper surface of the magnetic column 15 and the inner wall of the mounting cavity 121. The installation cavity 121 is filled with cooling liquid.
In this case, as shown in fig. 6, a mounting cavity 121 formed inside the target head 12 may be used to house the magnetic ring 14 and the magnetic pillar 15, and a magnetic field is formed between the magnetic ring 14 and the magnetic pillar 15. The argon ions bombard the surface of the target material at high energy, so that the target material is sputtered. During sputtering, since a large portion of the atomic energy is converted into heat, without or with insufficient cooling, the heat will cause the target head 12 to become too hot and melt the entire target. Therefore, gaps are formed between the upper surface of the magnetic ring 14, the upper surface of the magnetic column 15 and the inner wall of the mounting cavity 121, and when cooling liquid is introduced into the mounting cavity 121, the liquid flows in the space in the mounting cavity 121, so that the target head 12 is cooled, and the target material is cooled.
In addition, since the target head 12 is located in the accommodating cavity 111 and the target is exposed from the opening, the baffle 7 is disposed at the opening. Thus, the shutter 7 can shield the target material, thereby preventing the target material from being contaminated.
In order to provide cooling liquid in the installation cavity 121, in some embodiments of the present application, the ultrahigh vacuum magnetron sputtering target 101 may further include a water inlet pipe 16, a water outlet pipe 17 and a water tank (not shown in fig. 7) as shown in fig. 7, wherein one end of the water inlet pipe 16 is communicated with the space inside the magnetic ring 14. One end of the water outlet pipe 17 is communicated with the base 13 and the space on the upper surface of the bottom wall of the mounting cavity 121. The water tank is communicated with the other end of the water inlet pipe 16 and the other end of the water outlet pipe 17, and the water tank is used for supplying cooling liquid.
In this case, as shown in fig. 7, the direction of the arrow is a direction of the cooling liquid, the water flow in the water tank can be conveyed into the installation cavity 121 by the water inlet pipe 16, and then the water flow in the installation cavity 121 is discharged into the water tank through the water outlet pipe 17, thereby forming a circulation. Of course, in some embodiments of the present application, the water pump may be used to pump the water in the water tank into the installation cavity 121, and other manners may also be used, which is not limited in this application. In addition, other liquids can be filled in the water tank, as long as the liquid can meet the cooling requirement of the target head 12.
In addition, in some embodiments of the present application, as shown in fig. 7, since the magnetic ring 14 and the magnetic pillar 15 are located in the mounting cavity 121, and a gap is formed between the upper surfaces of the magnetic ring 14 and the magnetic pillar 15 and the upper wall of the mounting cavity 121, the coolant in the water inlet pipe 16 can directly enter the space between the magnetic ring 14 and the magnetic pillar 15, as the direction of the arrow shown in fig. 7 is the direction of the coolant flow, as the coolant increases gradually, the coolant can spread to the gap between the magnetic ring 14 and the magnetic pillar 15 and the inner wall of the mounting cavity 121, so as to cool the upper wall of the mounting cavity 121, and further cool the target at the upper part of the mounting cavity 121. Along with the increase of the cooling liquid, the cooling liquid can also spread from the upper part of the magnetic ring 14 to the side surface of the target head 12, so as to enter the bottom of the base 13, and the cooling liquid can be discharged from the water outlet pipe 17 because the water outlet pipe 17 is positioned at the gap between the base 13 and the inner wall of the bottom of the mounting cavity 121. Thus, the cooling liquid can flow in the mounting cavity 121 to take away heat, thereby effectively reducing the temperature.
The above-mentioned magnetic ring 14 and magnetic pillar 15 are exemplified below, for example, in some embodiments of the present application, as shown in fig. 8, the magnetic ring 14 and magnetic pillar 15 may both be magnetic steel, and the same side of the magnetic ring 14 and magnetic pillar 15 may be opposite magnetic poles.
For example, in some embodiments of the present application, as shown in fig. 8, the upper portion of the magnetic pillar 15 is an S pole, and the upper portion of the magnetic ring 14 is an N pole, so that a magnetic field is formed between the S pole and the N pole, and the electron e moves as shown in fig. 8, and the argon Ar impacts downward into the magnetic field and collides with the electron e, so that the argon Ar is ionized and bombards the target.
It should be noted that in some embodiments of the present application, as shown in fig. 9, the target head 12 may be divided into two parts, an upper target head 122 and a lower target head 122, wherein the upper target head 122 and the lower target head 123 are welded together, so that the above-mentioned mounting cavity 121 is formed between the upper target head 122 and the lower target head 123.
Since the target head 12 is also connected with the cathode of the power supply, the whole device is prevented from conducting electricity, so that the device is damaged or personnel are injured. In some embodiments of the present application, the ultra-high vacuum magnetron sputtering target 101 may further include an insulating member 18, one end of the insulating member 18 is connected to the target head 12, and the other end is connected to the support rod 3 (as shown in fig. 9, the other end may be connected to the support rod 3 through a flange, the flange is not shown at the bottom of the support rod 3, and refer to fig. 6). In this case, the insulating member 18 can isolate the power of the target head 12 from the rod 3, thereby ensuring the safety of the apparatus.
The above mentioned structure of the insulating member 18 is exemplified below, for example, in some embodiments of the present application, as shown in fig. 10, the insulating member 18 may include a first collar 181, a ceramic ring 182 and a second collar 183, wherein one end of the first collar 181 is connected to the side of the target 12 away from the target, and serves as an end of the insulating member 18 connected to the target 12. The ceramic ring 182 is located on the side of the first collar 181 away from the target 12, and one end of the ceramic ring 182 is connected to the other end of the first collar 181. One end of the second collar 183 is connected to the other end of the ceramic ring 182; the other end of the second collar 183 is connected to the strut 3 as the other end of the insulator 18 connected to the strut 3. The first collar 181 and the second collar 183 are made of kovar material, and the ceramic ring 182 is made of ceramic material. The outer surface of the second collar 183 may be connected to the shield case 11 by a flange or the like.
It should be noted that the kovar material mentioned in the present application may be a kovar, so that, in one aspect, as shown in fig. 11, which is a cross-sectional view of the insulator 18, the ceramic ring 182 is located between the first collar 181 and the second collar 183, and the ceramic ring 182 may be isolated from electrical conduction. Alternatively, the ceramic ring 182 may be welded together with the kovar material of the first and second collars 181, 183 to form a unitary member. The first collar 181 and the second collar 183 of the kovar material may also be welded to the target 12 and the stem 3 metal material.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and shall cover the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. An ultra-high vacuum magnetron sputtering target, comprising:
a strut;
the target head is connected with one end of the support rod, the target head is also connected with a power supply cathode, and an installation cavity is formed inside the target head;
the base is arranged in the mounting cavity and is connected with the bottom wall of the mounting cavity;
the magnetic ring is arranged in the mounting cavity and is positioned on the base;
the magnetic column is arranged in the mounting cavity, positioned on the base and positioned in the magnetic ring, and the target material is arranged on the outer surface of one side of the target head, which is far away from the supporting rod;
gaps are formed among the upper surface of the magnetic ring, the upper surface of the magnetic column and the inner wall of the mounting cavity; and cooling liquid is introduced into the mounting cavity.
2. The ultrahigh vacuum magnetron sputtering target as claimed in claim 1 further comprising an insulator member, wherein one end of the insulator member is connected to the target head and the other end is connected to the support rod.
3. The ultra-high vacuum magnetron sputtering target of claim 2 wherein the insulator comprises:
one end of the first lantern ring is connected with one side of the target head, which is far away from the target material, and is used as one end of the insulating part connected with the target head;
the ceramic ring is positioned on one side, away from the target head, of the first sleeve ring, and one end of the ceramic ring is connected with the other end of the first sleeve ring;
one end of the second lantern ring is connected with the other end of the ceramic ring; the other end of the second lantern ring is connected with the supporting rod and serves as the other end of the insulating piece connected with the supporting rod.
4. The ultra-high vacuum magnetron sputtering target of claim 3 wherein the first collar and the second collar are both kovar material and the ceramic ring is a ceramic material.
5. The ultrahigh vacuum magnetron sputtering target of any one of claims 1~4 further comprising:
the baffle is arranged on one side of the target material, which is far away from the target head, and is used for exposing or covering the target material;
a rotary cylinder having an output shaft;
and the magnetic coupling driver is connected with the output shaft, drives the transmission shaft in the vacuum cavity inside the magnetic coupling driver to rotate, and the baffle is connected with the transmission shaft.
6. The ultrahigh vacuum magnetron sputtering target of claim 5 further comprising a bracket, said bracket being slidably attached to said strut.
7. The ultra-high vacuum magnetron sputtering target of claim 6 further comprising:
the shielding cover is provided with an accommodating cavity and an opening communicated with one end of the accommodating cavity; the target head is positioned in the accommodating cavity, the target material is exposed out of the opening, and the baffle is arranged at the opening; the outer surface of the second sleeve ring is also connected with the shielding cover;
the flange is sleeved outside the support rod and connected with the support;
the trachea, it is located to spiral a plurality of bundles and around the branch, and is located the flange is close to target head one side, tracheal one end lets in argon gas, the other end with it is linked together to hold the chamber.
8. The ultrahigh vacuum magnetron sputtering target of any one of claims 1~4 further comprising:
one end of the water inlet pipe is communicated with the space in the magnetic ring;
one end of the water outlet pipe is communicated with the base and the space on the upper surface of the mounting cavity;
and the water tank is communicated with the other end of the water inlet pipe and the other end of the water outlet pipe and is used for providing the cooling liquid.
9. The ultra-high vacuum magnetron sputtering target as recited in claim 1 wherein the magnetic ring and the magnetic pillar are both magnetic steel, and the same side of the magnetic ring and the magnetic pillar is a magnetic pole of opposite polarity.
10. A magnetron sputtering apparatus comprising the ultra-high vacuum magnetron sputtering target of any one of claims 1~9, a vacuum chamber and a pedestal located within the vacuum chamber;
the base station is used for bearing a substrate, and the ultrahigh vacuum magnetron sputtering target is arranged opposite to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211218514.5A CN115505889A (en) | 2022-10-06 | 2022-10-06 | Ultrahigh vacuum magnetron sputtering target and magnetron sputtering device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211218514.5A CN115505889A (en) | 2022-10-06 | 2022-10-06 | Ultrahigh vacuum magnetron sputtering target and magnetron sputtering device |
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| CN115505889A true CN115505889A (en) | 2022-12-23 |
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| CN202211218514.5A Pending CN115505889A (en) | 2022-10-06 | 2022-10-06 | Ultrahigh vacuum magnetron sputtering target and magnetron sputtering device |
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