CN115503330A - Interface separation and recovery method of EVA-Si laminating layer of solar backboard - Google Patents
Interface separation and recovery method of EVA-Si laminating layer of solar backboard Download PDFInfo
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- CN115503330A CN115503330A CN202210783127.XA CN202210783127A CN115503330A CN 115503330 A CN115503330 A CN 115503330A CN 202210783127 A CN202210783127 A CN 202210783127A CN 115503330 A CN115503330 A CN 115503330A
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000000926 separation method Methods 0.000 title claims abstract description 29
- 238000010030 laminating Methods 0.000 title claims abstract description 21
- 238000011084 recovery Methods 0.000 title claims abstract description 17
- 238000000608 laser ablation Methods 0.000 claims abstract description 29
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims abstract 16
- 239000012790 adhesive layer Substances 0.000 claims abstract 7
- 238000004064 recycling Methods 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 239000002313 adhesive film Substances 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 19
- 238000001816 cooling Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
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Abstract
The invention discloses an interface separation and recovery method of an EVA-Si laminating layer of a solar backboard, which comprises the following steps of performing laser ablation on an EVA-Si composite layer, wherein the laser ablation is to irradiate the EVA layer of the EVA-Si composite layer; the separation of the EVA-Si layer of the solar backboard is realized by ablating the EVA-Si adhesive layer of the solar backboard through laser, the method is simple, the separation effect is good, the recovery rate is high, and the problems that the separation efficiency of the solar backboard is low and the adhesion rate of inorganic adhesive films is high in the industry are solved.
Description
Technical Field
The invention belongs to the technical field of separation and recovery of complex interfaces of solar back plates, and particularly relates to an interface separation and recovery method of an EVA-Si laminating layer of a solar back plate.
Background
The solar backboard is positioned on the back of the solar panel, plays a role in protecting and supporting the cell piece, and has reliable insulativity, water resistance and aging resistance. The solar backboard is positioned on the back of the solar cell panel, plays a role in protecting and supporting the cell, and has reliable insulativity, water resistance and aging resistance.
After the solar cell panel is not used, if the solar back panel material can be efficiently separated and recycled, resource recycling can be greatly promoted, and environmental protection and resource regeneration are facilitated.
At present, the EVA-Si laminating layer of the solar backboard is mainly recycled by processes such as crushing, hot knife cutting and the like, but the separation efficiency is low, and the inorganic adhesive film adhesion rate is high.
Disclosure of Invention
This section is for the purpose of summarizing some aspects of embodiments of the invention and to briefly introduce some preferred embodiments. In this section, as well as in the abstract and title of the application, simplifications or omissions may be made to avoid obscuring the purpose of the section, the abstract and the title, and such simplifications or omissions are not intended to limit the scope of the invention.
The present invention has been made in view of the above-mentioned technical drawbacks.
Therefore, as one aspect of the present invention, the present invention overcomes the disadvantages in the prior art, and provides a method for separating and recycling the interface of the EVA-Si lamination layer of the solar back sheet.
In order to solve the technical problems, the invention provides the following technical scheme: an interface separation and recovery method of an EVA-Si laminating layer of a solar backboard comprises the following steps,
laser ablation of the EVA-Si laminating layer of the solar backboard; wherein, the first and the second end of the pipe are connected with each other,
the laser ablation is irradiating the EVA layer of the EVA-Si composite layer, and the content of VA in the EVA layer is 10-30%.
As a preferable scheme of the interface separation and recovery method of the EVA-Si bonding layer of the solar back sheet of the present invention, the method comprises: the laser ablation is carried out at the power of 10-30W.
As a preferable scheme of the interface separation and recovery method of the EVA-Si bonding layer of the solar back sheet of the present invention, the method comprises: and (3) performing laser ablation, wherein the power of the laser ablation is 15-25W.
As a preferable scheme of the interface separation and recovery method of the EVA-Si bonding layer of the solar back sheet of the present invention, the method comprises: the laser ablation has a laser wavelength of 500-1500 nm.
As a preferable scheme of the interface separation and recovery method of the EVA-Si bonding layer of the solar back sheet of the present invention, the method comprises: the frequency of the laser ablation is 40-100 Hz.
As a preferable scheme of the interface separation and recovery method of the EVA-Si bonding layer of the solar back sheet of the present invention, the method comprises: the scanning speed of the laser ablation is 1500-3000 mm/s.
As a preferred scheme of the interface separation and recovery method of the EVA-Si laminating layer of the solar backboard, the method comprises the following steps: the irradiation distance of the laser ablation EVA-Si composite layer is 30-35 cm.
As a preferred scheme of the interface separation and recovery method of the EVA-Si laminating layer of the solar backboard, the method comprises the following steps: the EVA-Si laminating layer of the solar backboard is provided with an EVA-Si-EVA composite layer, the thickness of the EVA layer is 0.3-1 mm, and the thickness of the Si layer is 0.3-0.5 mm.
The invention has the beneficial effects that:
the invention provides an interface separation and recovery method of an EVA-Si laminating layer of a solar backboard, which realizes the separation of the EVA-Si layer of the solar backboard by ablating the EVA-Si laminating layer of the solar backboard through laser.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise. Wherein:
FIG. 1 is a diagram showing the principle of separating EVA-Si layers by laser ablation and the effect of single-sided treatment;
FIG. 2 is a diagram showing the effect of double-sided processing for separating the EVA-Si layer by local laser ablation.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying specific embodiments of the present invention are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced otherwise than as specifically described herein, and it will be appreciated by those skilled in the art that the present invention may be practiced without departing from the spirit and scope of the present invention and that the present invention is not limited by the specific embodiments disclosed below.
Furthermore, the references herein to "one embodiment" or "an embodiment" refer to a particular feature, structure, or characteristic that may be included in at least one implementation of the present invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
Example 1:
by using a laser component, laser parameters of the laser component are adjusted to be 1064nm of laser wavelength, 20W of power and frequency: the scanning speed is 2000mm/s at 80Hz, so that laser irradiates one side of the solar backboard (an EVA-monocrystalline silicon-EVA layer three-layer laminated structure, the thickness of an EVA layer is 1mm, the thickness of a Si layer is 0.5mm, and the VA content of the EVA layer is 15 percent), and then irradiates the other side of the solar backboard. After laser ablation, the surface temperature of the solar backboard is higher than 150 ℃, and after standing and cooling, the monocrystalline silicon and the EVA can be largely peeled off by using tools such as tweezers.
After the treatment, the EVA layer of the solar backboard is separated from the monocrystalline silicon, and the separation of the monocrystalline silicon and the EVA by more than 98% can be achieved. The effect graph of the double-sided treatment for locally performing laser ablation to separate the EVA-Si layer is shown in figure 2.
The main mechanism is as follows: after the laser with specific wavelength penetrates through the EVA layer, energy is completely injected into the monocrystalline silicon panel to generate a large amount of heat energy, so that a complex bonding surface of the EVA and the monocrystalline silicon is changed, the EVA on the bonding surface is directly gasified after the EVA is subjected to high-energy heat, the gasification amount is very weak, and the gasification thickness is less than 0.1 mu m, so that EVA loss and environmental pollution are not caused, in addition to gasification, EVA deformation and local carbonization caused by instant high temperature are also one of the reasons for separation. The principle and single-side processing effect diagram of the EVA-Si layer separation by laser ablation is shown in figure 1;
the content of VA in EVA is mainly measured according to the transmittance of 1064nm infrared light, and the higher the content of VA is, the lower the transmittance is.
Example 2:
by using a laser component, laser parameters of the laser component are adjusted to be 1064nm of laser wavelength, 10W of power and frequency: 100Hz, and the scanning speed is 1500mm/s, so that laser irradiates one side of a solar backboard (an EVA-monocrystalline silicon-EVA layer three-layer laminating structure, the thickness of an EVA layer is 1mm, the thickness of a Si layer is 0.5mm, and the VA content of the EVA layer is 15 percent) and then irradiates the other side of the solar backboard. The surface temperature of the solar backboard after laser ablation is higher than 130 ℃, and after standing and cooling, the monocrystalline silicon and the EVA can be peeled off by using tools such as tweezers, but the monocrystalline silicon and the EVA are difficult to peel off in a large scale and need to be treated a little by a little.
After the treatment, the EVA layer of the solar backboard is separated from the monocrystalline silicon, and the separation of the monocrystalline silicon and the EVA can reach more than 75%.
Example 3:
by using a laser component, laser parameters of the laser component are adjusted to be 1064nm, power 30W and frequency: the scanning speed is 2000mm/s at 90Hz, so that laser irradiates one surface of a solar backboard (an EVA-monocrystalline silicon-EVA layer three-layer laminating structure, the thickness of an EVA layer is 1mm, the thickness of a Si layer is 0.5mm, and the VA content of the EVA layer is 15%) and then irradiates the other surface of the solar backboard. The surface temperature of the solar backboard subjected to laser ablation is higher than 180 ℃, and after standing and cooling, the monocrystalline silicon and the EVA can be peeled off by using tools such as tweezers, but the monocrystalline silicon and the EVA cannot be peeled off in a large scale.
After the treatment, the EVA layer of the solar backboard is separated from the monocrystalline silicon, and the EVA is locally and instantaneously carbonized by high-energy irradiation, so that the separation of the monocrystalline silicon and the EVA is more than 97 percent.
Example 4:
the laser component is utilized, and laser parameters are adjusted to 1264nm of laser wavelength, 20W of power and frequency: the scanning speed is 1600mm/s at 90Hz, so that laser irradiates one side of a solar backboard (an EVA-monocrystalline silicon-EVA layer three-layer laminating structure, the thickness of an EVA layer is 1mm, the thickness of a Si layer is 0.5mm, and the VA content of the EVA layer is 20%) and then irradiates the other side of the solar backboard. After laser ablation, the surface temperature of the solar backboard is higher than 170 ℃, and after standing and cooling, the monocrystalline silicon and the EVA can be largely peeled off by using tools such as tweezers.
After the treatment, the EVA layer of the solar backboard is separated from the monocrystalline silicon, and the separation of the monocrystalline silicon and the EVA can reach more than 81%.
Example 5:
by using a laser component, laser parameters of the laser component are adjusted to be 1064nm of laser wavelength, 25W of power and frequency: 100Hz, and the scanning speed is 1800mm/s, so that laser irradiates one side of a solar backboard (an EVA-monocrystalline silicon-EVA layer three-layer laminating structure, the thickness of the EVA layer is 300 mu m, the thickness of the Si layer is 160 mu m, and the VA content of the EVA layer is 32 percent) and then irradiates the other side of the solar backboard. After laser ablation, the surface temperature of the solar backboard is higher than 150 ℃, and after standing and cooling, the monocrystalline silicon and the EVA can be largely peeled off by using tools such as tweezers.
After the treatment, the EVA layer of the solar backboard is separated from the monocrystalline silicon, and the separation of the monocrystalline silicon and the EVA can reach more than 88%.
The invention provides an interface separation and recovery method of an EVA-Si laminating layer of a solar backboard, which realizes the separation of the EVA-Si layer of the solar backboard by ablating the EVA-Si laminating layer of the solar backboard through laser.
It should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered in the scope of the present invention.
Claims (8)
1. An interface separation and recovery method of an EVA-Si laminating layer of a solar backboard is characterized by comprising the following steps: comprises the steps of (a) preparing a mixture of a plurality of raw materials,
laser ablation of the EVA-Si laminating layer of the solar backboard; wherein the content of the first and second substances,
the laser ablation is to irradiate the EVA layer of the EVA-Si composite layer, and the content of VA in the EVA layer is 10-30%.
2. The method for separating and recovering the interface of the EVA-Si adhesive layer of the solar back sheet according to claim 1, wherein the method comprises the following steps: the laser ablation is carried out at the power of 10-30W.
3. The method for separating and recovering the interface of the EVA-Si adhesive layer of the solar back sheet according to claim 1, wherein the method comprises the following steps: and (3) performing laser ablation, wherein the power of the laser ablation is 15-25W.
4. The method for separating and recovering the interface of the EVA-Si adhesive layer of the solar back sheet according to any one of claims 1 to 3, wherein: the laser wavelength of the laser ablation is 500-1500 nm.
5. The method for separating and recovering the interface of the EVA-Si adhesive layer of the solar back sheet according to any one of claims 1 to 3, wherein: the laser ablation has the frequency of 40-100 Hz.
6. The method for separating and recovering the interface of the EVA-Si adhesive layer of the solar back sheet according to any one of claims 1 to 3, wherein: the scanning speed of the laser ablation is 1500-3000 mm/s.
7. The method for separating and recovering the interface of the EVA-Si adhesive layer of the solar back sheet according to any one of claims 1 to 3, wherein: the irradiation distance of the laser ablation EVA-Si composite layer is 30-35 cm.
8. The method for separating and recycling the interface of the EVA-Si lamination layer of the solar back sheet according to claim 7, wherein: the EVA-Si laminating layer of the solar backboard is provided with an EVA-Si-EVA composite layer, the thickness of the EVA layer is 0.3-1 mm, and the thickness of the Si layer is 0.3-0.5 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210783127.XA CN115503330B (en) | 2022-06-27 | 2022-06-27 | Interface separation and recovery method for EVA-Si laminating layer of solar backboard |
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| CN202210783127.XA CN115503330B (en) | 2022-06-27 | 2022-06-27 | Interface separation and recovery method for EVA-Si laminating layer of solar backboard |
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| CN115503330B CN115503330B (en) | 2024-06-18 |
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| JP2009099883A (en) * | 2007-10-19 | 2009-05-07 | Kaneka Corp | Thin film solar cell module |
| US20120171804A1 (en) * | 2004-11-30 | 2012-07-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
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| JP2015217372A (en) * | 2014-05-20 | 2015-12-07 | 株式会社日本スペリア社 | Regeneration method of solar battery panel |
| US20170005206A1 (en) * | 2007-10-06 | 2017-01-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| JP2018020267A (en) * | 2016-08-01 | 2018-02-08 | 東芝環境ソリューション株式会社 | Recycling method of solar cell module |
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| CN109496365A (en) * | 2017-01-26 | 2019-03-19 | L·K·格罗斯 | Method and apparatus for separating the different material layer of composite component |
| CN111477705A (en) * | 2020-04-15 | 2020-07-31 | 中国科学院电工研究所 | Method for removing organic adhesive film on back of crystalline silicon photovoltaic module |
| CN114012935A (en) * | 2021-11-10 | 2022-02-08 | 泉州师范学院 | Separation and recovery method of solar backboard composite EVA (ethylene vinyl acetate) adhesive film leftover material |
-
2022
- 2022-06-27 CN CN202210783127.XA patent/CN115503330B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120171804A1 (en) * | 2004-11-30 | 2012-07-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| US20170005206A1 (en) * | 2007-10-06 | 2017-01-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| JP2009099883A (en) * | 2007-10-19 | 2009-05-07 | Kaneka Corp | Thin film solar cell module |
| WO2015051977A1 (en) * | 2013-10-10 | 2015-04-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for the separating detachment of layers of a composite component formed from at least two layers |
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