CN115498498A - Packaging structure of quantum random number chip and generation method of quantum random number - Google Patents
Packaging structure of quantum random number chip and generation method of quantum random number Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000010287 polarization Effects 0.000 claims abstract description 94
- 230000002269 spontaneous effect Effects 0.000 claims abstract description 9
- 238000005538 encapsulation Methods 0.000 claims abstract 2
- 230000003287 optical effect Effects 0.000 claims description 74
- 238000012805 post-processing Methods 0.000 claims description 14
- 230000003321 amplification Effects 0.000 claims description 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000011161 development Methods 0.000 abstract description 7
- 238000012536 packaging technology Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001583 randomness test Methods 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F7/58—Random or pseudo-random number generators
- G06F7/588—Random number generators, i.e. based on natural stochastic processes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
- G06N10/20—Models of quantum computing, e.g. quantum circuits or universal quantum computers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
- G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
Abstract
The application discloses packaging structure of quantum random number chip and quantum random number's generation method, with quantum entropy source chip encapsulation in the packaging shell, through VCSEL drive circuit drive VCSEL laser chip spontaneous emission produce the light pulse that has bistable characteristic, carry out the selectivity through the polarization mode of polarization printing opacity piece to light pulse and pass through, can make the intensity of the light pulse through polarization printing opacity piece produce random variation, further measure the intensity of light pulse through PIN detector chip, and convert the light signal who measures into random current signal output, generate quantum random number. By applying the technical scheme provided by the invention, a plurality of relatively independent photoelectric chips can be mixed and packaged by utilizing a mixed packaging technology to complete the function of quantum random number generation, so that the quantum random number chip with low cost, small volume and high stability can be realized, and the large-scale application and development of the quantum random number technology are facilitated.
Description
Technical Field
The invention relates to the field of information security, in particular to a packaging structure of a quantum random number chip and a generation method of a quantum random number.
Background
Random numbers are one of the important resources of cryptography, and in both classical cryptography and quantum cryptography, their randomness requirements on random numbers are very strict, and even directly determine the security of most cryptosystems. In addition, random numbers are also used extensively outside of cryptography, and play a very important role in sample statistics, monte-Carlo simulations, and in some computational sciences.
The device or module that generates the random number is referred to as a random number generator, and its core devices are referred to as entropy sources. The entropy source is the source of randomness of the random number generator, whose quality directly determines the quality of the final output random number sequence. At present, the generation methods of random numbers can be divided into two main categories according to the characteristics of entropy sources: pseudo-random number generators and physical random number generators. The random number generator can stably output a pseudo-random number sequence at a very fast speed, and the algorithm ensures that the output sequence has certain statistical characteristics and meets a typical randomness test. But also because the pseudo-random number is generated based on a deterministic algorithm, the source of randomness is only the randomness of the input seed, so when it is used frequently, it can be predicted by statistical analysis of the generated random numbers. Therefore, in the application of information security or passwords, the inherent certainty of the algorithm random number is easy to be utilized by an attacker.
The physical random number is different, and the randomness of the random number is based on entropy sources of non-deterministic objective physical phenomena, including atmospheric noise, electronic noise, circuit jitter and the like, and the random number generator generates random numbers by detecting the results of the physical phenomena. Meanwhile, if the physical phenomena are quantum phenomena, the physical entropy sources are called quantum entropy sources, and the physical phenomena comprise vacuum fluctuation, spontaneous radiation, radiative decay and other equivalent quantum physical processes. Due to the quantum mechanical intrinsic randomness of the quantum physical process, the quantum random number is generally considered to have true randomness and cannot be predicted, and is an ideal random number generator, and the true randomness of the random number generator plays a very critical role in the field of information security.
However, the conventional quantum random number generator is generally a system based on discrete components, and some random number systems use bulky and expensive devices including a quantum entanglement source and a single photon detector, so that the conventional quantum random number generator has the problems of large volume, high power consumption, high price and the like, and thus has not been widely used so far.
Disclosure of Invention
In view of this, the present invention provides a quantum random number chip package structure and a quantum random number generation method, and a hybrid package technology is used to implement a quantum random number chip with low cost, small volume and high stability.
In order to achieve the above purpose, the invention provides the following technical scheme:
a packaging structure of a quantum random number chip, the packaging structure comprising:
a package substrate having opposing first and second surfaces;
a package housing secured to the first surface;
the quantum entropy source chip is arranged on the first surface and positioned in the packaging shell, and comprises: the device comprises a PIN detector chip, a polarization light-transmitting sheet and a VCSEL laser chip, wherein the polarization light-transmitting sheet is positioned between the PIN detector chip and the VCSEL laser chip and is respectively connected with the PIN detector chip and the VCSEL laser chip;
the VCSEL laser chip works in a gain switch mode, generates optical pulses through spontaneous radiation, the optical pulses have two polarization modes, the optical pulses emitted each time can be randomly composed of the two polarization modes according to different light intensity ratios, the polarization light transmission sheet selectively passes through the polarization modes of the optical pulses, so that the intensity of the optical pulses passing through the polarization light transmission sheet is randomly changed, and the PIN detector chip is used for measuring the intensity of the optical pulses and converting measured optical signals into random current signals to be output; the random current signal is used to generate quantum random numbers.
Preferably, in the above package structure, the two polarization modes include: a vertical polarization mode and a horizontal polarization mode.
Preferably, in the above packaging structure, the polarization transparent sheet is adhered to the PIN detector chip and the VCSEL laser chip by an optical adhesive.
Preferably, in the above package structure, the quantum entropy source chip further includes: at least 4 electrodes, 2 of which are disposed on said VCSEL laser chip and 2 of which are disposed on said PIN detector chip.
Preferably, in the above package structure, the 4 electrodes are all led out to the package substrate by gold wire bonding or solder bonding.
Preferably, in the above package structure, the package substrate is a PCB or a ceramic substrate;
the packaging shell is a plastic shell or a metal shell.
Preferably, in the above package structure, the package further includes:
the VCSEL driving circuit is connected with the quantum entropy source chip and used for driving the VCSEL laser chip to spontaneously radiate to generate optical pulses;
the PIN detector driving circuit is connected with the quantum entropy source chip and used for providing reverse bias for the PIN detector chip and simultaneously leading out a random current signal generated in the PIN detector chip;
the group-spanning amplification module is connected with the PIN detector driving circuit and is used for performing group-spanning amplification on a random current signal generated by the PIN detector chip and converting the random current signal into a random voltage signal within a set intensity range, wherein the set intensity range comprises 0-1 mW;
the comparator or the ADC module is connected with the cross-group amplification module and is used for converting the random voltage signal into a random digital signal;
and the post-processing module is connected with the comparator or the ADC module and is used for post-processing the random digital signal and outputting the quantum random number.
The invention also provides a method for generating quantum random numbers of the packaging structure, which comprises the following steps:
the VCSEL driving circuit drives the VCSEL laser chip to perform spontaneous radiation to generate optical pulses, the optical pulses have two polarization modes, and the optical pulses emitted each time can be randomly composed of the two polarization modes according to different light intensity ratios;
selectively passing a polarization mode of the light pulses through a polarizing light transmissive sheet such that the intensity of the light pulses passing through the polarizing light transmissive sheet varies randomly;
and measuring the intensity of the light pulse through a PIN detector chip, converting the measured light signal into a random current signal and outputting the random current signal, wherein the random current signal is used for generating quantum random numbers.
Preferably, the method for generating quantum random numbers further comprises:
leading out the random current signal through a PIN detector driving circuit;
performing cross-group amplification on the random current signal through a cross-group amplification module, and converting the random current signal into a random voltage signal within a set intensity range, wherein the set intensity range comprises 0-1 mW;
converting the random voltage signal into a random digital signal through a comparator or an ADC module;
and post-processing the random digital signal through a post-processing module, and outputting the quantum random number.
As can be seen from the above description, in the packaging structure of the quantum random number chip and the method for generating the quantum random number provided in the technical solution of the present invention, the quantum entropy source chip is packaged in the packaging shell, the VCSEL laser chip is driven by the VCSEL driving circuit to spontaneously radiate to generate the optical pulse with the bistable characteristic, the polarization mode of the optical pulse is selectively passed through the polarization transparent sheet, so that the intensity of the optical pulse passing through the polarization transparent sheet can be randomly changed, the intensity of the optical pulse is further measured by the PIN detector chip, and the measured optical signal is converted into the random current signal to be output, so as to generate the quantum random number. By applying the technical scheme provided by the invention, a plurality of relatively independent photoelectric chips can be mixed and packaged by utilizing a mixed packaging technology to complete the function of quantum random number generation, so that the quantum random number chip with low cost, small volume and high stability can be realized, and the large-scale application and development of the quantum random number technology are facilitated.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
The structures, the proportions, the sizes, and the like shown in the drawings are only used for matching the disclosure disclosed in the specification, so that those skilled in the art can understand and read the disclosure, and do not limit the conditions and conditions for implementing the present application, so that the present disclosure has no technical essence, and any structural modifications, changes of the proportion relation, or adjustments of the sizes, should still fall within the scope of the disclosure which can be covered by the disclosure in the present application without affecting the efficacy and the achievable purpose of the present application.
Fig. 1 is a cross-sectional view of a packaging structure of a quantum random number chip according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a structure of a quantum random number chip according to an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating changes in optical pulses when the quantum entropy source chip provided by the embodiment of the present invention operates;
FIG. 4 is a flowchart of a method for generating quantum random numbers according to an embodiment of the present invention;
fig. 5 is a flowchart of another method for generating quantum random numbers according to an embodiment of the present invention.
Detailed Description
Embodiments of the present application will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the application are shown, and in which it is to be understood that the embodiments described are merely illustrative of some, but not all, of the embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The invention combines the semiconductor chip technology, realizes a quantum random number chip packaging structure and a quantum random number generation method, can be used for manufacturing quantum random number generator products, and greatly reduces the price and the volume compared with the traditional quantum random number generator, so the scheme can finally realize the quantum random number generator with low cost, high stability and small volume, thereby promoting the widening and development of the application field of the quantum random number generator.
According to the scheme, the quantum entropy source chip is packaged in the packaging shell, the VCSEL laser chip is driven by the VCSEL driving circuit to spontaneously radiate to generate optical pulses with bistable characteristics, the polarization mode of the optical pulses is selectively passed through the polarization light transmission sheet (only one of two polarization modes generated by the VCSEL laser chip is allowed to be transmitted through the polarization light transmission sheet, and the optical pulses in the other polarization mode are prevented from being passed through the polarization light transmission sheet), the intensity of the optical pulses passing through the polarization light transmission sheet can be randomly changed, the intensity of the optical pulses is further measured through the PIN detector chip, the measured optical signals are converted into random current signals to be output, and quantum random numbers are generated. In addition, the scheme utilizes a hybrid packaging technology to perform hybrid packaging on a plurality of relatively independent photoelectric chips to complete the function of quantum random number generation, realizes a quantum random number chip with low cost, small volume and high stability, and is beneficial to large-scale application and development of the quantum random number technology.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, the present application is described in further detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 1, fig. 1 is a cross-sectional view of a package structure of a quantum random number chip according to an embodiment of the present invention, where the package structure includes:
a package substrate 10 having opposite first and second surfaces;
a package housing 16 fixed to the first surface;
a quantum entropy source chip disposed on the first surface and located within the package housing 16, the quantum entropy source chip comprising: the device comprises a PIN detector chip 11, a polarization light-transmitting sheet 13 and a VCSEL laser chip 15, wherein the polarization light-transmitting sheet 13 is positioned between the PIN detector chip 11 and the VCSEL laser chip 15 and is respectively connected with the PIN detector chip 11 and the VCSEL laser chip 15;
wherein, the VCSEL laser chip 15 operates in a gain switching mode, and generates an optical pulse by spontaneous emission, the optical pulse has two polarization modes (a vertical polarization mode and a horizontal polarization mode), each emitted optical pulse will be randomly composed of the two polarization modes according to different light intensity ratios, so that the output optical pulse has a random polarization state, the polarization transparent sheet 13 selectively passes through the polarization mode of the optical pulse (only allows the optical pulse of a single polarization mode to pass through), so that the intensity of the optical pulse passing through the polarization transparent sheet 13 changes randomly, and the PIN detector chip 11 is configured to measure the intensity of the optical pulse and convert the measured optical signal into a random current signal for output; the random current signal is used to generate quantum random numbers.
As shown in fig. 1, the polarization transparent sheet 13 is adhered to the PIN detector chip 11 through an optical adhesive 12; the polarization light-transmitting sheet 13 is bonded to the VCSEL laser chip 15 by an optical adhesive 14. The optical cement has the advantages of strong light transmittance, high strength and the like, and is a common colloid material in the manufacturing process of the optical module.
As shown in fig. 1, the quantum entropy source chip further includes: at least 4 electrodes, 2 of which 17 are arranged on the VCSEL laser chip 15 and the other 2 electrodes 17 are arranged on the PIN detector chip 11.
And the 4 electrodes 17 are led out of the packaging structure in a gold wire bonding or welding bonding mode. Thereby driving the VCSEL laser chip 15 and the PIN detector chip 11 with an external circuit and obtaining a detection signal of the PIN detector chip 11. It should be noted that the number of the electrodes 17 may be configured based on actual needs, and is not limited to the mode shown in the present invention, but there may be at least 4 independent electrodes.
In addition, in consideration of the reliability of the packaging structure, the packaging shell 16 needs to be covered outside the quantum entropy source chip, and the packaging colloid can be poured into the packaging shell 16 to further improve the packaging reliability. The packaging mode can be common standard SOP packaging or SIP packaging and the like.
In the embodiment of the present invention, the package substrate 10 may be a PCB or a ceramic substrate; the package housing 16 may be a plastic housing or a metal housing.
In the embodiment of the present invention, the VCSEL laser chip 15 is a surface emitting semiconductor laser, which has advantages of low cost and small size compared with a conventional edge emitting semiconductor laser (e.g., DFD laser), but because the laser resonant cavity is short, in the process of each laser beam setup under the driving of an external current pulse, due to a spontaneous emission process, a polarization mode of a generated optical pulse has a bistable characteristic, that is, the polarization mode of the optical pulse has two polarization components, that is, a horizontal polarization component and a vertical polarization component, and under a certain working condition, light energies contained in the two polarization components are randomly changed, whereas an edge emitting laser such as a DFB laser only stably generates a beam in one polarization mode.
The polarization light-transmitting sheet 13 is an optical component which only allows a single polarization mode to transmit, is generally manufactured based on a certain dichroic optical crystal, can allow a single polarization light to pass through and prevent polarization light of other polarization modes from passing through by design, is widely applied to optical module manufacturing, and has the advantages of mature technology, low price and the like. In this embodiment, the polarization-transparent sheet 13 allows only one of the two polarization modes generated by the VCSEL laser chip 15 to transmit through the polarization-transparent sheet 13, while blocking the light pulse of the other polarization mode from passing through, so that the intensity of the light pulse passing through the polarization-transparent sheet 13 varies randomly. For example, the polarizing light-transmitting sheet 13 in the present application allows only light pulses of a vertical polarization mode to pass therethrough, and blocks light pulses of a horizontal polarization mode from passing therethrough. In another mode, only the light pulse of the horizontal polarization mode may be allowed to pass through, and the light pulse of the vertical polarization mode may be prevented from passing through.
In the embodiment of the invention, a quantum entropy source chip is packaged in a packaging shell, a VCSEL laser chip 15 is driven by an external circuit to spontaneously radiate to generate an optical pulse with bistable characteristics, the polarization mode of the optical pulse is selectively passed through a polarization light-transmitting sheet 13 (that is, only one of two polarization modes generated by the VCSEL laser chip is allowed to be transmitted through the polarization light-transmitting sheet, and the optical pulse of the other polarization mode is prevented from being passed through), so that the intensity of the optical pulse passing through the polarization light-transmitting sheet 13 can be randomly changed, the intensity of the optical pulse is further measured through a PIN detector chip 11, and the measured optical signal is converted into a random current signal to be output, and the random current signal can be used for subsequently generating a quantum random number. In addition, the scheme utilizes a hybrid packaging technology to perform hybrid packaging on a plurality of relatively independent photoelectric chips to complete the function of quantum random number generation, realizes a quantum random number chip with low cost, small volume and high stability, and is beneficial to large-scale application and development of the quantum random number technology.
Referring to fig. 2, fig. 2 is a schematic diagram of a packaging structure of a quantum random number chip according to an embodiment of the present invention, and based on the packaging structure shown in fig. 1, the packaging structure further includes:
the VCSEL driving circuit 100 is connected with the quantum entropy source chip 200 and is used for driving the VCSEL laser chip 15 to spontaneously radiate to generate optical pulses; here typically a pulsed current source circuit of one cycle, which drives the VCSEL laser chip 15 to generate a train of optical pulse signals.
The PIN detector driving circuit 300 is connected with the quantum entropy source chip 200, and is used for providing reverse bias for the PIN detector chip 11 and leading out a random current signal generated in the PIN detector chip 11;
the group-spanning amplifying module 400 is connected to the PIN detector driving circuit 300, and is configured to convert a random current signal generated by the PIN detector chip 11 into a random voltage signal within a set intensity range after group-spanning amplification, where the set intensity range includes 0 to 1mW;
a comparator or ADC module 500, wherein the comparator or ADC module 500 is connected to the trans-group amplifying module 400, and is configured to convert the random voltage signal into a random digital signal;
and the post-processing module 600, the post-processing module 600 is connected with the comparator or the ADC module 500, and is configured to perform post-processing on the random digital signal and output the quantum random number. Typical post-processing algorithms include m-LSB algorithm, toeplitz matrix algorithm, etc., and the hardware carrier of these algorithms is usually FPGA chip or special ASIC algorithm chip.
The scheme utilizes a hybrid packaging technology to perform hybrid packaging on a plurality of relatively independent photoelectric chips to complete the function of quantum random number generation, realizes the quantum random number chip with low cost, small volume and high stability, and is favorable for large-scale application and development of the quantum random number technology.
Referring to fig. 3, fig. 3 is a schematic diagram of a change of an optical pulse when the quantum entropy source chip provided by the embodiment of the present invention operates, and for the quantum entropy source chip in fig. 2, the operation flow is as follows:
1. the VCSEL drive circuit 100 drives a pulse current source of the VCSEL laser chip 15, and the lowest current value of the current pulse is smaller than the laser switch current threshold valueI th The maximum value of the drive current pulse is larger thanI th . This results in the light pulse being generated for each current drive pulse through the complete light pulse set-up process, i.e., each light pulse is set up starting with spontaneous emission, as shown in fig. 3 (a), and the total intensity of the emitted pulses is stable because the drive current pulses are of the same intensity, as shown in fig. 3 (b), but the amount of light energy contained in the two polarization modes in each pulse is randomly varied.
2. The polarization light-transmitting sheet 13 selectively passes the polarization mode of the optical pulses generated by the VCSEL laser chip 15, and the intensity of each pulse passing through the polarization light-transmitting sheet 13 is randomly varied, as shown in fig. 3 (c).
3. The PIN photo-detection chip 11 converts the randomly changed light pulse intensity into a randomly changed current magnitude and outputs the current magnitude.
Based on the foregoing embodiment, another embodiment of the present invention further provides a method for generating a quantum random number, as shown in fig. 2 and fig. 4, fig. 4 is a flowchart of a method for generating a quantum random number according to an embodiment of the present invention, where the method for generating a quantum random number includes:
step S11: the VCSEL laser chip is driven by a VCSEL driving circuit to spontaneously radiate to generate optical pulses, the optical pulses have two polarization modes (a vertical polarization mode and a horizontal polarization mode), and the optical pulses emitted each time can be randomly composed of the two polarization modes according to different light intensity ratios;
step S12: selectively passing the polarization mode of the light pulses through a polarizing light-transmitting sheet (only light pulses in a vertical polarization mode are allowed to pass and light pulses in a horizontal polarization mode are prevented from passing; or only light pulses in a horizontal polarization mode are allowed to pass and light pulses in a vertical polarization mode are prevented from passing) so that the intensity of the light pulses passing through the polarizing light-transmitting sheet is randomly changed;
step S13: and measuring the intensity of the light pulse through a PIN detector chip, and converting the measured light signal into a random current signal for output.
Based on the method for generating quantum random numbers, as shown in fig. 5, further, fig. 5 is a flowchart of another method for generating quantum random numbers according to an embodiment of the present invention, where the method further includes:
step S14: leading out the random current signal through a PIN detector driving circuit;
step S15: performing cross-group amplification on the random current signal through a cross-group amplification module, and converting the random current signal into a random voltage signal within a set intensity range, wherein the set intensity range comprises 0-1 mW;
step S16: converting the random voltage signal into a random digital signal through a comparator or an ADC module;
step S17: and post-processing the random digital signal through a post-processing module, and outputting a quantum random number.
As can be seen from the above description, in the packaging structure of the quantum random number chip and the method for generating the quantum random number provided in the technical solution of the present invention, the quantum entropy source chip is packaged in the packaging shell, the VCSEL laser chip is driven by the VCSEL driving circuit to spontaneously radiate to generate the optical pulse with the bistable characteristic, the polarization mode of the optical pulse is selectively passed through the polarization transparent sheet, so that the intensity of the optical pulse passing through the polarization transparent sheet can be randomly changed, the intensity of the optical pulse is further measured by the PIN detector chip, and the measured optical signal is converted into the random current signal to be output, so as to generate the quantum random number. By applying the technical scheme provided by the invention, a plurality of relatively independent photoelectric chips can be mixed and packaged by using a mixed packaging technology to complete the function of quantum random number generation, so that the quantum random number chip with low cost, small volume and high stability can be realized, and the large-scale application and development of the quantum random number technology are facilitated.
The embodiments in the present specification are described in a progressive manner, or in a parallel manner, or in a combination of a progressive manner and a parallel manner, and each embodiment focuses on differences from other embodiments, and similar parts in various embodiments can be referred to each other. The method for generating the quantum random number disclosed in the embodiment corresponds to the packaging structure of the quantum random number chip disclosed in the embodiment, so that the description is relatively simple, and the relevant points can be referred to the description of the packaging structure part.
It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrases "comprising one of the elements 8230 \8230;" does not exclude the presence of additional like elements in an article or device comprising the same element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A packaging structure of a quantum random number chip is characterized in that the packaging structure comprises:
a package substrate having opposing first and second surfaces;
a package housing secured to the first surface;
a quantum entropy source chip disposed on the first surface and located within the package housing, the quantum entropy source chip comprising: the device comprises a PIN detector chip, a polarization light-transmitting sheet and a VCSEL laser chip, wherein the polarization light-transmitting sheet is positioned between the PIN detector chip and the VCSEL laser chip and is respectively connected with the PIN detector chip and the VCSEL laser chip;
the VCSEL laser chip works in a gain switch mode, generates optical pulses through spontaneous radiation, the optical pulses have two polarization modes, the optical pulses emitted each time can be randomly composed of the two polarization modes according to different light intensity ratios, the polarization light transmission sheet selectively passes through the polarization modes of the optical pulses, so that the intensity of the optical pulses passing through the polarization light transmission sheet is randomly changed, and the PIN detector chip is used for measuring the intensity of the optical pulses and converting measured optical signals into random current signals to be output; the random current signal is used to generate quantum random numbers.
2. The package structure of claim 1, wherein the two polarization modes comprise: a vertical polarization mode and a horizontal polarization mode.
3. The package structure of claim 1, wherein the polarization transparent sheet is bonded to the PIN detector chip and the VCSEL laser chip by an optical adhesive.
4. The package structure of claim 1, wherein the quantum entropy source chip further comprises: at least 4 electrodes, 2 of which are disposed on the VCSEL laser chip and the other 2 electrodes are disposed on the PIN detector chip.
5. The package structure according to claim 4, wherein the 4 electrodes are all led out to the package substrate by gold wire bonding or solder bonding.
6. The package structure of claim 1, wherein the package substrate is a PCB or a ceramic substrate;
the packaging shell is a plastic shell or a metal shell.
7. The package structure of claim 1, further comprising:
the VCSEL driving circuit is connected with the quantum entropy source chip and used for driving the VCSEL laser chip to spontaneously radiate to generate optical pulses;
the PIN detector driving circuit is connected with the quantum entropy source chip and used for providing reverse bias for the PIN detector chip and simultaneously leading out a random current signal generated in the PIN detector chip;
the cross-group amplification module is connected with the PIN detector driving circuit and is used for performing cross-group amplification on a random current signal generated by the PIN detector chip and converting the random current signal into a random voltage signal within a set intensity range, wherein the set intensity range comprises 0-1 mW;
the comparator or the ADC module is connected with the cross-group amplification module and is used for converting the random voltage signal into a random digital signal;
and the post-processing module is connected with the comparator or the ADC module and is used for post-processing the random digital signal and outputting the quantum random number.
8. A method for generating quantum random numbers of an encapsulation structure according to any one of claims 1 to 7, wherein the method for generating quantum random numbers comprises:
the VCSEL driving circuit drives the VCSEL laser chip to perform spontaneous radiation to generate optical pulses, the optical pulses have two polarization modes, and the optical pulses emitted each time can be randomly composed of the two polarization modes according to different light intensity ratios;
selectively passing a polarization mode of the light pulses through a polarizing light transmissive sheet such that the intensity of the light pulses passing through the polarizing light transmissive sheet varies randomly;
and measuring the intensity of the optical pulse through a PIN detector chip, converting the measured optical signal into a random current signal and outputting the random current signal, wherein the random current signal is used for generating a quantum random number.
9. The method of generating quantum random numbers according to claim 8, further comprising:
leading out the random current signal through a PIN detector driving circuit;
performing cross-group amplification on the random current signal through a cross-group amplification module, and converting the random current signal into a random voltage signal within a set intensity range, wherein the set intensity range comprises 0-1 mW;
converting the random voltage signal into a random digital signal through a comparator or an ADC module;
and post-processing the random digital signal through a post-processing module, and outputting the quantum random number.
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