CN115498096A - Semiconductor device, method of manufacturing the same, and electronic apparatus having the same - Google Patents
Semiconductor device, method of manufacturing the same, and electronic apparatus having the same Download PDFInfo
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- CN115498096A CN115498096A CN202210814964.4A CN202210814964A CN115498096A CN 115498096 A CN115498096 A CN 115498096A CN 202210814964 A CN202210814964 A CN 202210814964A CN 115498096 A CN115498096 A CN 115498096A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 407
- 239000013078 crystal Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 46
- 239000010410 layer Substances 0.000 claims description 156
- 238000010897 surface acoustic wave method Methods 0.000 claims description 112
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 56
- 239000010409 thin film Substances 0.000 claims description 47
- 235000012239 silicon dioxide Nutrition 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 239000010453 quartz Substances 0.000 claims description 16
- 239000002356 single layer Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 239000010432 diamond Substances 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 10
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
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- 239000010936 titanium Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052773 Promethium Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
- H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention relates to a semiconductor device comprising: a substrate having first and second sides opposite in a thickness direction of the substrate; a first group of resonator units arranged on a first side of the substrate; and a second group of resonator elements disposed on a second side of the substrate. The first group of resonator units and the second group of resonator units are single crystal acoustic wave resonator units. The substrate includes a first substrate having the first side, a second substrate having the second side, and an intermediate substrate disposed between the first substrate and the second substrate in a thickness direction of the substrate. The first substrate and the second substrate are respectively connected with the middle substrate, and the thickness of the middle substrate is larger than that of the first substrate and that of the second substrate and is at least 5 times larger than that of the first substrate or that of the second substrate. The first substrate and the second substrate are bonded with the middle substrate. The invention also relates to a method for manufacturing the semiconductor device and an electronic device with the semiconductor device.
Description
The present application is a divisional application entitled "semiconductor device and method for manufacturing the same, electronic device having semiconductor device" with application number 202010260243.4 and application date of 2020, 4/3.
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and more particularly, to a semiconductor device, a method of manufacturing the same, and an electronic apparatus having the same.
Background
Bulk acoustic wave resonators and surface acoustic wave resonators are widely used in electronic devices such as filters. In existing bulk acoustic wave or surface acoustic wave filter designs or products, the corresponding resonator element (including electrical structures such as piezoelectric layers and electrodes) is provided on only one side of the substrate. With the trend of more and more severe miniaturization of the rf front end, the filter structure with resonators arranged on one side is not favorable for further reduction of the filter size.
On the other hand, the bulk acoustic wave filter and the surface acoustic wave filter have respective advantages, for example, the bulk acoustic wave filter has better performance at high frequency, and the surface acoustic wave filter has better performance at low frequency, so that two filters are often required to cooperate with each other in the rf front-end system to realize a multiband filter bank (i.e., a multiplexer). However, in the conventional bulk acoustic wave filter based on the polycrystalline aluminum nitride piezoelectric material and the surface acoustic wave filter based on the monocrystalline lithium niobate piezoelectric material, because different piezoelectric materials, structures and corresponding manufacturing processes are adopted, it is impossible to process two filters on one chip simultaneously, and the development of further miniaturization of a radio frequency front end is hindered.
Disclosure of Invention
The invention is provided for further reducing the transverse occupied area of electronic devices such as a bulk acoustic wave filter, a multiplexer and the like, and facilitating the realization of high integration of the bulk acoustic wave filter and the surface acoustic wave filter.
According to an aspect of an embodiment of the present invention, there is provided a semiconductor device including:
a substrate having first and second sides opposite in a thickness direction of the substrate;
a first group of resonator units arranged on a first side of the substrate; and
a second group of resonator elements disposed on a second side of the substrate,
wherein: each group of resonator units has at least one resonator unit, and the first group of resonator units and/or the second group of resonator units are bulk acoustic wave resonator units.
According to still another aspect of an embodiment of the present invention, there is provided a method of manufacturing the above semiconductor device, including the steps of:
a group of resonator elements is formed on both sides of the substrate, respectively, each group having at least one resonator element.
According to a further aspect of an embodiment of the present invention, there is provided an electronic device including the above semiconductor device.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout the figures thereof, and in which:
fig. 1A to 1C are a schematic cross-sectional view, a schematic top view, and a schematic bottom view, respectively, of a semiconductor device according to an exemplary embodiment of the present invention, in which the cross-sectional view of fig. 1A can be taken along a line a1A2 in fig. 1B or along a line B1B2 in fig. 1C, in fig. 1A, the substrate of the upper single-crystal bulk acoustic wave resonator unit and the substrate of the lower single-crystal bulk acoustic wave resonator unit are respectively attached to upper and lower sides of the intermediate substrate;
2-1 through 2-14 are schematic process flow diagrams for fabricating the semiconductor device shown in FIG. 1A according to an exemplary embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of a semiconductor device in which a substrate of a single-crystal acoustic wave resonator is bonded to the other side of the substrate of a conventional bulk acoustic wave resonator (or a poly-crystal acoustic wave resonator) to form a double-sided bulk acoustic wave resonator structure according to an exemplary embodiment of the present invention;
fig. 3-1 through 3-6 are schematic process flow diagrams for fabricating the semiconductor device shown in fig. 3 according to an exemplary embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which a substrate of a single crystal acoustic wave resonator and a substrate of a conventional acoustic surface wave resonator are joined to each other by a bonding process;
fig. 5 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which a piezoelectric thin film surface acoustic wave resonator element is provided on an upper side of an intermediate substrate, and a single crystal acoustic wave resonator element is provided on a lower side of the intermediate substrate;
fig. 6 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which an upper side of an intermediate substrate is provided with a piezoelectric thin film surface acoustic wave resonator unit, a lower side of the intermediate substrate is provided with a mono-crystal bulk acoustic wave resonator unit, and the piezoelectric thin film surface acoustic wave resonator unit is provided with a bragg reflection layer;
fig. 7 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which a piezoelectric thin-film surface acoustic wave resonator unit is provided on the upper side of the substrate of the polycrystalline acoustic wave resonator unit;
fig. 8 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which a piezoelectric thin film surface acoustic wave resonator unit is provided on an upper side of a substrate of the polycrystalline acoustic wave resonator unit, and the piezoelectric thin film surface acoustic wave resonator unit is provided with a bragg reflection layer.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
In the present invention, the piezoelectric layer material, based on different resonators, can be aluminum nitride (AlN), doped aluminum nitride (doped AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO) 3 ) Quartz (Quartz), potassium niobate (KNbO) 3 ) Or lithium tantalate (LiTaO) 3 ) Etc., wherein the doped ALN contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.
Fig. 1A to 1C are a schematic cross-sectional view, a schematic top view, and a schematic bottom view, respectively, of a semiconductor device according to an exemplary embodiment of the present invention, in which the cross-sectional view of fig. 1A can be taken along a line a1A2 in fig. 1B or along a line B1B2 in fig. 1C, and in fig. 1A, the substrate of the upper single-crystal bulk acoustic resonator unit and the substrate of the lower single-crystal bulk acoustic resonator unit are respectively connected to the upper and lower sides of the intermediate substrate. Wherein, the thickness of the intermediate substrate 10 is greater than the thickness of the first substrate 20 and the second substrate 21, and at least 5 times greater than the thickness of the first substrate or the second substrate, so as to maintain the high mechanical strength and stability of the whole chip, and further, the thickness of the intermediate substrate 10 is greater than 10 times greater than the thickness of the first substrate or the second substrate.
In the example shown in fig. 1A, the semiconductor device includes 4 single-crystal FBARs (short-crystal FBARs) which are different from conventional polycrystalline FBARs based on polycrystalline piezoelectric materials in that the piezoelectric layer material is a single-crystal material (e.g., lithium niobate, lithium tantalate, single-crystal aluminum nitride, etc.).
The reference numbers in FIGS. 1A-1C are illustrated below:
10: a middle substrate for bonding and connecting the first substrate 20 and the second substrate 21 at both sides thereof. The optional materials are single crystal Si, quartz, siC, gaN, gaAs, sapphire, diamond, etc.
20: a first substrate.
21: a second substrate. The first substrate and the second substrate can be made of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and the like.
31 32 and 33, 34: the acoustic mirrors embedded in the substrates 20 and 21 are air cavity structures in this embodiment, and may also be bragg reflectors or other equivalent acoustic wave reflectors.
41, 42: a resonator lower electrode on the substrate 20, wherein 41 and 42 are electrically connected to each other (the "upper and lower" electrodes in the present invention are defined by being far from the acoustic mirror, regardless of the upper and lower positions in the drawing, wherein "lower" is close to the acoustic mirror and "upper" is far from the acoustic mirror, and will not be described later). In the present invention, the electrode material may be: gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium Tungsten (TiW), aluminum (Al), titanium (Ti), osmium (Os), magnesium (Mg), gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), germanium (Ge), copper (Cu), aluminum (Al), chromium (Cr), arsenic-doped gold, and the like.
51: the piezoelectric thin film layer or piezoelectric layer on the substrate 20 side, and in this embodiment, the material of the piezoelectric layer 51 is a single crystal material (such as lithium niobate, lithium tantalate, quartz, single crystal aluminum nitride, etc.).
61, 62: a process hole structure through the piezoelectric layer 51 for releasing the sacrificial material.
71, 72: and a resonator upper electrode on the substrate 20 side.
43, 44: a resonator lower electrode on the substrate 21.
52: the piezoelectric thin film layer or the piezoelectric layer on the substrate 21 side, in this embodiment, the material of the piezoelectric layer 52 is a single crystal material (such as lithium niobate, lithium tantalate, quartz, single crystal aluminum nitride, etc.), and may be the same as or different from the material of the piezoelectric layer 51.
63, 64: a process hole structure through the piezoelectric layer 52 for releasing the sacrificial material.
73, 74: the resonator upper electrode on the substrate 21 side, and the upper electrodes 73 and 74 are electrically connected to each other.
The above electrodes may constitute the FBAR electrical structure of the corresponding bulk acoustic wave resonator.
Fig. 2-1 through 2-14 are schematic process flow diagrams for manufacturing the semiconductor device shown in fig. 1A according to an exemplary embodiment of the present invention, and a manufacturing process or manufacturing steps of the semiconductor device shown in fig. 1A are exemplarily described below with reference to fig. 2-1 through 2-14.
Step 1: as shown in fig. 2-1, a single crystal piezoelectric thin film layer 51, such as single crystal aluminum nitride (AlN), gallium nitride (GaN), is deposited on the surface of an auxiliary substrate Aux1 (e.g., silicon carbide); or a boundary layer is formed on the surface of the auxiliary substrate Aux1 (such as a lithium niobate or lithium tantalate substrate) by ion implantation, and the piezoelectric thin film layer 51 is formed above the boundary layer, wherein the piezoelectric thin film layer 51 is made of the same material as the auxiliary substrate Aux 1.
And 2, step: as shown in fig. 2-2, a metal layer is deposited on the surface 51 and patterned into electrodes 41 and 42 (and the connections therebetween).
And step 3: as shown in fig. 2-3, a layer of sacrificial material S2, which may be polysilicon, amorphous silicon, silicon dioxide, doped silicon dioxide, etc., is deposited on the surface of the piezoelectric layer 51 and the electrodes 41 and 42 of the resulting structure of fig. 2-2 and patterned to form the shape of the air cavities 31 and 32 serving as acoustic mirrors.
And 4, step 4: as shown in fig. 2-4, a layer of base material 20, which may be silicon dioxide, silicon nitride, polysilicon, amorphous silicon, etc., but is different from the sacrificial layer material, is deposited on the surfaces of the piezoelectric layer 51, the sacrificial material S2 in the air cavity, and the connecting portions of the electrodes 41 and 42 in the resulting structure of fig. 2-3.
And 5: as shown in fig. 2 to 5, the base material 20 is ground flat by a CMP (chemical mechanical polishing) method.
Step 5a: the structure corresponding to fig. 2-5 on one side of the substrate 21 as shown in fig. 2-5a can be made by a process similar to that of steps 1-5 (the entire process is not repeated here, only the results are given).
And 6: as shown in fig. 2-6, the surface of the substrate 20 of the structure obtained in step 5 is bonded to one surface of another prepared substrate 10, and it is noted that there may be an auxiliary bonding layer (not shown) on the bonding surface of the substrate 10, such as silicon dioxide, silicon nitride, etc.
And 7: as shown in fig. 2 to 7, the structure obtained in step 6 is inverted, and the auxiliary substrate Aux1 is removed by CMP and/or etching or ion implantation layer separation, so that the surface of the piezoelectric layer 51 is exposed, and the separation interface is subjected to CMP to make the surface smooth and have low roughness.
And step 8: as shown in fig. 2 to 8, a layer of electrode metal material is deposited on the exposed surface of the piezoelectric layer 51 and patterned to form upper electrodes 71 and 72, and then sacrificial layer release holes 61 and 62 are etched in the surface of the piezoelectric layer 51 to connect to the sacrificial layers 31 and 32.
And step 9: as shown in fig. 2 to 9, a process protection layer Aux3, such as silicon dioxide, doped silicon dioxide, polysilicon, silicon nitride, etc., may be deposited on the piezoelectric layer 51, the inside of the release hole of the sacrificial layer, and the surface of the upper electrodes 71 and 72 of the structure obtained in step 8, and may be made of the same material as the sacrificial layer or different materials.
Step 10: as shown in fig. 2-10, the structure obtained in step 9 is inverted again, and the substrate 10 bonded previously is removed by a certain thickness by CMP, so that the protective layer Aux3 prevents or significantly reduces the mechanical damage to the underlying structure in this process. Not shown, an auxiliary bonding layer, such as silicon dioxide, silicon nitride, etc., may be selectively deposited on the surface of the ground substrate 10.
Step 11: the structure obtained in step 5a is also bonded to the other surface of the substrate 10 after the reduction in thickness, as shown in fig. 2 to 11.
Step 12: as shown in fig. 2 to 12, the auxiliary substrate Aux2 is removed by CMP and/or etching or ion implantation layer separation to expose the surface of the piezoelectric layer 52, and the separation interface is CMP-processed to make the surface smooth and have low roughness. The protection layer Aux3 in this process prevents or significantly reduces the mechanical damage that the underlying structure may be subjected to.
Step 13: as shown in fig. 2-13, a layer of electrode metal material is deposited on the exposed surface of the piezoelectric layer 52 and patterned to form upper electrodes 73 and 74 (and connections therebetween), followed by etching of sacrificial layer release holes 63 and 64.
Step 14: as shown in fig. 2-14, the protective layer Aux3 and all the sacrificial materials in the acoustic cavities 31-34 are finally removed by wet or dry etching, so as to obtain the structure shown in fig. 1A (fig. 1A is an inversion of fig. 2-14).
In the example shown in fig. 1A, single crystal bulk acoustic wave resonator units are provided on both upper and lower sides of the substrate as a whole, but the present invention is not limited thereto, and for example, a single crystal bulk acoustic wave resonator unit and a conventional bulk acoustic wave resonator unit or a polycrystalline bulk acoustic wave resonator unit may be provided.
Fig. 3 is a schematic cross-sectional view of a semiconductor device according to another exemplary embodiment of the present invention, in which a substrate of a single-crystal bulk acoustic wave resonator is bonded to the other side of the substrate of a conventional bulk acoustic wave resonator, thereby forming a double-sided bulk acoustic wave resonator structure. In the embodiment shown in fig. 3, the semiconductor device includes 2 sFBAR and two conventional FBARs, wherein the sFBAR is processed using the steps of fig. 2-1 to 2-5. The substrate 20 of the sfabs is formed by a deposition process and may be selected from silicon dioxide, silicon nitride, polysilicon, amorphous silicon, etc. In fig. 3, the substrate 21 is a hard substrate, and the material may be single crystal Si, quartz, siC, gaN, gaAs, sapphire, diamond, etc., and has a thickness greater than that of the substrate 20 of the sFBAR, and at least 5 times greater than that of the substrate 20, so that the whole chip maintains high mechanical strength and stability, and further, has a thickness greater than 10 times that of the substrate 20.
The manufacturing process or steps of the semiconductor device shown in fig. 3 will be described below with reference to fig. 3-1 to 3-6. In the processes shown in fig. 3-1 through 3-6, some steps that are well known in the art are omitted.
Step 1: as shown in fig. 3-1, lower electrodes 43 and 44 of a conventional FBAR are deposited and patterned on the surface of the substrate 21 and the acoustic mirrors 33 and 34 filled with the sacrificial material S3.
Step 2: as shown in fig. 3-2, a piezoelectric film 52 is deposited on the substrate 21, the lower electrodes 43/44 and a portion of the sacrificial layer S3. The material may be aluminum nitride (AlN), doped aluminum nitride (doped AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), etc., wherein the doped AlN contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.
And 3, step 3: as shown in fig. 3-3, upper electrodes 73 and 74 (and the connections between the electrodes) are deposited and patterned on the upper surface of the piezoelectric film 52.
And 4, step 4: as shown in fig. 3-4, release process holes 63/64 are etched into the piezoelectric film 52.
And 5: as shown in fig. 3-5, a protective layer Aux4, such as silicon dioxide, doped silicon dioxide, polysilicon, silicon nitride, etc., is covered on the piezoelectric film 52 and the upper electrodes 73 and 74 (and the connection portion between the two electrodes) to a certain thickness, and the same material as the sacrificial layer material may be used or different.
Step 6, as shown in fig. 3-6, the conventional FBAR shown in fig. 3-5 is partially inverted, and the substrate 21 is removed to a certain thickness by CMP. Not shown, an auxiliary bonding layer, such as silicon dioxide, silicon nitride, etc., may be optionally deposited on the surface of the ground substrate 21. And the single crystal FBAR parts completed by the additional process are bonded together in a substrate-to-substrate manner. The Aux4 protective layer may serve to reduce mechanical damage to the normal FBAR device on the other side of the substrate 21 during this process.
Fig. 4 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which a substrate of a single crystal acoustic wave resonator and a substrate of a conventional acoustic surface wave resonator are joined to each other by a bonding process.
The resonator structure or semiconductor device shown in fig. 4 includes 2 sFBAR and 1 conventional surface acoustic wave resonator (SAW), and in the present invention, the conventional surface acoustic wave resonator is a surface acoustic wave resonator using a piezoelectric material as both a substrate and a piezoelectric functional layer, that is, a surface acoustic wave resonator without using a piezoelectric film, as opposed to a piezoelectric film surface acoustic wave resonator using a piezoelectric film, in which:
sfabrr is fabricated using the steps of fig. 2-1 to 2-5, and its substrate 21 is formed by a deposition process, and the material may be silicon dioxide, silicon nitride, polysilicon, amorphous silicon, etc.
Structures corresponding to reference numerals 40-42 form the electrical structure of the SAW. The structures (lower electrode, upper electrode) corresponding to reference numerals 43, 44, and 73 and 74 form the electrical structure of the FBAR.
As shown in fig. 4, one side (lower side in the drawing) of the SAW piezoelectric layer 51 is connected to a first side (upper side in the drawing) of the FBAR substrate 21 through a bonding process, the other side of the SAW piezoelectric layer 51 is provided with the SAW electrical structures 40-42, and the other side of the FBAR substrate 21 is provided with the FBAR piezoelectric layer 52 and the FBAR electrical structures 43-44 and 73-74.
In an alternative embodiment, the thickness of the SAW piezoelectric layer 51 is at least 5 times the thickness of the FBAR substrate 21, so as to maintain high mechanical strength and stability of the whole chip, and optionally, the thickness of the SAW piezoelectric layer 51 is more than 10 times the thickness of the FBAR substrate 21.
Fig. 5 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which a piezoelectric thin film surface acoustic wave resonator element is provided on the upper side of an intermediate substrate, and a single crystal acoustic wave resonator element is provided on the lower side of the intermediate substrate. Fig. 5 is different from the structure shown in fig. 4 in that the surface acoustic wave resonator in fig. 5 employs a thin film piezoelectric layer 51, and the thin film piezoelectric layer 51 is connected to one side of the intermediate substrate 10 by a bonding process. The intermediate substrate 10 is a hard substrate, and the material can be selected from single crystal Si, quartz, siC, gaN, gaAs, sapphire, diamond, and the like. The material of the thin film piezoelectric layer 51 can be selected from single crystal piezoelectric materials such as lithium niobate and lithium tantalate. In an alternative embodiment, the thickness of the middle substrate 10 is greater than the thickness of the substrate 21 and the thin film piezoelectric layer 51 on the FBAR side, for example, at least 5 times the thickness of the substrate 21 or the thickness of the thin film piezoelectric layer 51, so as to maintain high mechanical strength and stability of the whole chip, and optionally, the thickness of the middle substrate 10 is greater than 10 times the thickness of the FBAR substrate 21 or the thin film piezoelectric layer 51.
As shown in fig. 5, one side (lower side in the drawing) of the thin film piezoelectric layer 51 is connected to a first side (upper side in the drawing) of the intermediate base 10, and the other side (lower side in the drawing) of the thin film piezoelectric layer is provided with a SAW electrical structure corresponding to reference numerals 40 to 42. One side (upper side in the figure) of the FBAR substrate 21 is connected to the second side (lower side in the figure) of the middle substrate 10, and the other side (lower side in the figure) of the FBAR substrate 21 is provided with an FBAR piezoelectric layer 52 and FBAR electrical structures, corresponding to reference numerals 43-44 and 73-74.
Fig. 6 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which an upper side of an intermediate substrate is provided with a piezoelectric thin film surface acoustic wave resonator unit, a lower side of the intermediate substrate is provided with a single bulk acoustic wave resonator unit, and the piezoelectric thin film surface acoustic wave resonator unit is provided with a bragg reflection layer.
The resonator structure shown in fig. 6 includes 2 fbars and 1 piezoelectric thin-film surface acoustic wave resonator having a bragg reflection layer, in which:
As shown in fig. 6, the bragg reflective layer is disposed between the intermediate substrate 10 and the thin film piezoelectric layer 51; one side (lower side in the drawing) of the thin film piezoelectric layer 51 is connected to a first side (upper side in the drawing) of the bragg reflector, and the other side (upper side in the drawing) of the thin film piezoelectric layer 51 is provided with a SAW electrical structure, as denoted by reference numerals 40 to 42; the second side (lower side in the figure) of the bragg reflective layer is connected with the first side (upper side in the figure) of the intermediate substrate 10; one side (upper side in the drawing) of the FBAR substrate 21 is connected to a second side (lower side in the drawing) of the middle substrate 10, and the other side of the FBAR substrate 21 is provided with an FBAR piezoelectric layer 51 and an FBAR electrical structure.
In the example shown in fig. 6, the intermediate substrate 10 has a hardness greater than that of the FBAR substrate 21, and the intermediate substrate is bonded to the FBAR substrate. In the embodiment shown in fig. 6, the thickness of the middle substrate 10 is optionally greater than the thickness of the FBAR substrate 21, and the thickness of the middle substrate 10 is at least 5 times the thickness of the FBAR substrate 21 or the thickness of the thin film piezoelectric layer 51, so that the whole chip maintains high mechanical strength and stability, and optionally, the thickness of the middle substrate 10 is greater than 10 times the thickness of the FBAR substrate 21 or the thickness of the thin film piezoelectric layer 51.
Fig. 7 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which a piezoelectric thin film surface acoustic wave resonator unit is provided on an upper side of a substrate of the polycrystalline acoustic wave resonator unit.
The resonator structure or the semiconductor device shown in fig. 7 includes 2 FBARs and 1 surface acoustic wave resonator having a bragg reflection layer, in which:
in the embodiment shown in fig. 7, the FBAR substrate 21 may be selected from single crystal Si, quartz, siC, gaN, gaAs, sapphire, diamond, etc. In one embodiment of the present invention, the thickness of the FBAR substrate 21 is at least 5 times the thickness of the thin film piezoelectric layer 51, so as to maintain high mechanical strength and stability of the whole chip, and optionally, the thickness of the FBAR substrate 21 is more than 10 times the thickness of the thin film piezoelectric layer 51. The lower side of the thin film piezoelectric layer 51 is connected to a first side (upper side in the figure) of the FBAR substrate 21, and the upper side of the thin film piezoelectric layer 51 is provided with SAW electrical structures, such as the structures corresponding to reference numerals 40 to 42; the second side (lower side in the figure) of the FBAR substrate 21 is provided with an FBAR piezoelectric layer 52 and FBAR electrical structures such as 43/44,73/74, etc.
Fig. 8 is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention, in which a piezoelectric thin film surface acoustic wave resonator unit is provided on an upper side of a substrate of the polycrystalline acoustic wave resonator unit, and the piezoelectric thin film surface acoustic wave resonator unit is provided with a bragg reflection layer.
In the embodiment shown in fig. 8, the piezoelectric thin film SAW unit on the upper side of the FBAR substrate 21 of the polycrystalline bulk acoustic resonator unit includes a bragg reflective layer disposed between the FBAR substrate 21 and the thin film piezoelectric layer 51, and the thin film piezoelectric layer 51. The material of the FBAR substrate 21 may be selected from single crystal Si, quartz, siC, gaN, gaAs, sapphire, diamond, etc. . Optionally, the thickness of the FBAR substrate 21 is at least 5 times the thickness of the thin film piezoelectric layer 51, so as to maintain high mechanical strength and stability of the whole chip, and optionally, the thickness of the FBAR substrate 21 is more than 10 times the thickness of the thin film piezoelectric layer 51.
In fig. 8, the lower side of the thin film piezoelectric layer 51 is connected to the first side (upper side in the drawing) of the bragg reflection layer, and the upper side of the thin film piezoelectric layer 51 is provided with a SAW electrical structure, as shown by reference numerals 40 to 42.
In fig. 8, the second side (lower side in the figure) of the bragg reflector is connected to the upper side of the FBAR substrate 21, and the lower side of the FBAR substrate 21 is provided with the FBAR piezoelectric layer 52 and FBAR electrical structures, such as 43/44,73/74, and the like.
Based on the technical scheme of the invention, as the resonators can be arranged on both sides of the substrate, the transverse occupied area of electronic devices such as bulk acoustic wave filters, multiplexers and the like can be reduced, and the volume of the electronic devices is further reduced. Specifically, in the present invention, the resonator units are provided on both the upper and lower sides of the substrate, and in the case where the resonator units are each of a thin-film structure, the lateral area occupied by the double-sided resonator structure is significantly reduced (for example, the lateral occupied space can be reduced by 50% or more for arranging the same number of bulk acoustic wave resonators) and the increase in the space occupied in the longitudinal direction is negligible.
Meanwhile, the laminated thicknesses of the bulk acoustic wave resonators on the upper side and the lower side can be completely different, so that monolithic integration of bulk acoustic wave resonators with different structures is facilitated. For example, two filters may be separately manufactured on the upper and lower sides in a duplexer, or a series resonator unit and a parallel resonator unit may be separately manufactured on the upper and lower sides in a single filter.
The invention can also realize the monolithic integration of the bulk acoustic wave filter and the surface acoustic wave filter, and has complementary advantages, thereby further reducing the volume of the radio frequency front-end system. Specifically, based on the technical scheme of the invention, under the condition that the surface acoustic wave resonator and the bulk acoustic wave resonator are respectively arranged on the upper side and the lower side of the substrate in the semiconductor device, the surface acoustic wave filter and the bulk acoustic wave filter can be mutually matched in a radio frequency front-end system to realize a multi-band filter bank (namely a multiplexer), and meanwhile, the radio frequency front end can be further miniaturized.
Based on the above embodiments and the drawings, the present invention provides the following technical solutions:
1. a semiconductor device, comprising:
a substrate having first and second sides opposite in a thickness direction of the substrate;
a first group of resonator units arranged on a first side of the substrate; and
a second group of resonator elements disposed on a second side of the substrate,
wherein: each group of resonator units has at least one resonator unit, and the first group of resonator units and/or the second group of resonator units are bulk acoustic wave resonator units.
2. The semiconductor device of claim 1, wherein:
the first group of resonator elements comprises a first group of bulk acoustic wave resonator elements and the second group of resonator elements comprises a second group of bulk acoustic wave resonator elements.
3. The semiconductor device of claim 2, wherein:
the first group of resonator units and the second group of resonator units are all single crystal bulk acoustic wave resonator units;
the substrate comprises a first substrate, a second substrate and an intermediate substrate arranged between the first substrate and the second substrate in the thickness direction of the substrate, wherein the first substrate is provided with the first side, and the second substrate is provided with the second side;
the first substrate and the second substrate are respectively connected with the middle substrate, and the thickness of the middle substrate is greater than that of the first substrate and that of the second substrate and is at least 5 times greater than that of the first substrate or that of the second substrate;
the first substrate and the second substrate are bonded with the middle substrate.
4. The semiconductor device of claim 3, wherein:
the material of the first substrate and the second substrate is selected from at least one of silicon dioxide, silicon nitride, polycrystalline silicon and amorphous silicon, and the material of the intermediate substrate is selected from at least one of monocrystalline silicon, silicon carbide, quartz, gallium nitride, gallium arsenide, sapphire and diamond.
5. The semiconductor device of claim 3, wherein:
the thickness of the intermediate substrate is at least 10 times greater than the thickness of the first substrate or the second substrate.
6. The semiconductor device of claim 2, wherein:
the first group of resonator units are single crystal acoustic wave resonator units, and the second group of resonator units are polycrystal acoustic wave resonator units;
the substrate comprises a first substrate and a second substrate connected to each other, the first substrate having the first side and the second substrate having the second side;
the first substrate and the second substrate are bonded to each other,
the second substrate has a thickness at least 5 times the thickness of the first substrate.
7. The semiconductor device of claim 6, wherein:
the second substrate has a thickness at least 10 times the thickness of the first substrate.
8. The semiconductor device of claim 6, wherein:
the material of the first substrate is selected from at least one of silicon dioxide, silicon nitride, polycrystalline silicon and amorphous silicon;
the material of the second substrate is selected from at least one of monocrystalline silicon, silicon carbide, quartz, sapphire, gallium nitride, gallium arsenide and diamond.
9. The semiconductor device of claim 1, wherein:
the first group of resonator elements comprises surface acoustic wave resonator elements and the second group of resonator elements comprises bulk acoustic wave resonator elements.
10. The semiconductor device of claim 9, wherein:
the bulk acoustic wave resonator unit comprises a single crystal acoustic wave resonator unit, and the substrate is a single-layer substrate and an FBAR substrate;
the surface acoustic wave resonator unit comprises a surface acoustic wave piezoelectric layer, one side of the surface acoustic wave piezoelectric layer is connected with the first side of the FBAR substrate, the other side of the surface acoustic wave piezoelectric layer is provided with a Surface Acoustic Wave (SAW) electrical structure, and the other side of the FBAR substrate is provided with the FBAR piezoelectric layer and the FBAR electrical structure; and is
The thickness of the SAW piezoelectric layer is at least 5 times the thickness of the FBAR substrate.
11. The semiconductor device of claim 10, wherein:
the material of the FBAR substrate is selected from at least one of silicon dioxide, silicon nitride, polycrystalline silicon and amorphous silicon;
the SAW piezoelectric layer is made of a single crystal piezoelectric material;
the SAW piezoelectric layer is made of at least one material selected from lithium niobate, lithium tantalate and potassium niobate.
12. The semiconductor device of claim 10, wherein:
the thickness of the SAW piezoelectric layer is at least 10 times the thickness of the FBAR substrate.
13. The semiconductor device of claim 9, wherein:
the surface acoustic wave resonator unit comprises a piezoelectric film SAW unit, the bulk acoustic wave resonator unit comprises a single crystal acoustic wave resonator unit, and the piezoelectric film SAW unit comprises an SAW piezoelectric layer;
the substrate comprises an FBAR substrate and a middle substrate, the thickness of the middle substrate is greater than that of the FBAR substrate and the SAW piezoelectric layer, and the thickness of the middle substrate is at least 5 times that of the FBAR substrate or the SAW piezoelectric layer;
one side of the SAW piezoelectric layer is connected with the first side of the middle substrate, and the other side of the SAW piezoelectric layer is provided with a SAW electrical structure;
one side of the FBAR substrate is connected with the second side of the middle substrate, and the other side of the FBAR substrate is provided with an FBAR piezoelectric layer and an FBAR electrical structure.
14. The semiconductor device of claim 9, wherein:
the surface acoustic wave resonator unit comprises a piezoelectric film SAW unit, and the bulk acoustic wave resonator unit comprises a single crystal acoustic wave resonator unit;
the substrate comprises an FBAR substrate and an intermediate substrate;
the surface acoustic wave resonator unit comprises a Bragg reflection layer and an SAW piezoelectric layer, and the Bragg reflection layer is arranged between the middle substrate and the SAW piezoelectric layer;
the thickness of the middle substrate is greater than the thickness of the FBAR substrate and the SAW piezoelectric layer, and the thickness of the middle substrate is at least 5 times of the thickness of the SAW piezoelectric layer or the thickness of the FBAR substrate;
one side of the SAW piezoelectric layer is connected with the first side of the Bragg reflection layer, and the other side of the SAW piezoelectric layer is provided with a SAW electrical structure;
the second side of the Bragg reflector layer is connected with the first side of the middle substrate;
one side of the FBAR substrate is connected with the second side of the middle substrate, and the other side of the FBAR substrate is provided with an FBAR piezoelectric layer and an FBAR electrical structure.
15. The semiconductor device of claim 13 or 14, wherein:
the thickness of the intermediate substrate is at least 10 times the thickness of the SAW piezoelectric layer or the thickness of the FBAR substrate.
16. The semiconductor device of claim 13 or 14, wherein:
the material of the FBAR substrate is selected from at least one of silicon dioxide, silicon nitride, polycrystalline silicon and amorphous silicon;
the material of the intermediate substrate is selected from at least one of monocrystalline silicon, silicon carbide, quartz, sapphire, gallium nitride, gallium arsenide and diamond.
17. The semiconductor device of claim 9, wherein:
the surface acoustic wave resonator unit comprises a piezoelectric film SAW unit, the bulk acoustic wave resonator unit comprises a polycrystalline bulk acoustic wave resonator unit, and the piezoelectric film SAW unit comprises an SAW piezoelectric layer;
the substrate comprises an FBAR substrate, and the thickness of the FBAR substrate is at least 5 times the thickness of the SAW piezoelectric layer;
one side of the SAW piezoelectric layer is connected with the first side of the FBAR substrate, and the other side of the SAW piezoelectric layer is provided with a SAW electrical structure;
the second side of the FBAR substrate is provided with an FBAR piezoelectric layer and an FBAR electrical structure.
18. The semiconductor device of claim 9, wherein:
the surface acoustic wave resonator unit comprises a piezoelectric film SAW unit, and the bulk acoustic wave resonator unit comprises a polycrystal bulk acoustic wave resonator unit;
the substrate comprises an FBAR substrate;
the piezoelectric film SAW unit comprises a Bragg reflection layer and a SAW piezoelectric layer, and the Bragg reflection layer is arranged between the FBAR substrate and the SAW piezoelectric layer;
the thickness of the FBAR substrate is at least 5 times the thickness of the SAW piezoelectric layer;
one side of the SAW piezoelectric layer is connected with the first side of the Bragg reflection layer, and the other side of the SAW piezoelectric layer is provided with a SAW electrical structure;
the second side of the Bragg reflector layer is connected with the first side of the FBAR substrate;
the second side of the FBAR substrate is provided with an FBAR piezoelectric layer and an FBAR electrical structure.
19. The semiconductor device of claim 17 or 18, wherein:
the thickness of the FBAR substrate is at least 10 times the thickness of the SAW piezoelectric layer.
20. The semiconductor device of claim 1, wherein:
the substrate is a single-layer substrate, the first group of resonator units and the second group of resonator units share the single-layer substrate, and a first piezoelectric layer and a second piezoelectric layer are respectively arranged on two sides of the single-layer substrate in the thickness direction of the substrate.
21. The semiconductor device of claim 20, wherein:
the first group of resonator units are SAW units, and the second group of resonator units are single crystal acoustic wave resonator units; or
The first group of resonator units are piezoelectric film SAW units, and the second group of resonator units are multi-crystal acoustic wave resonator units.
22. The semiconductor device of claim 1, wherein:
the substrate includes a first substrate and a second substrate directly connected to each other in a thickness direction of the substrate, the first substrate corresponding to the first group of resonator elements, and the second substrate corresponding to the second group of resonator elements.
23. The semiconductor device of claim 22, wherein:
the first group of resonator units are single crystal acoustic wave resonator units, and the second group of resonator units are polycrystal acoustic wave resonator units; or
The first group of resonator units are piezoelectric film SAW units, and the second group of resonator units are single crystal acoustic wave resonator units.
24. The semiconductor device of claim 1, wherein:
the substrate includes a first substrate, a middle substrate and a second substrate which are sequentially connected with each other in the thickness direction of the substrate, the first substrate corresponds to the first group of resonator units, and the second substrate corresponds to the second group of resonator units.
25. The semiconductor device of claim 24, wherein:
the first group of resonator units and the second group of resonator units are all single crystal bulk acoustic wave resonator units;
26. the semiconductor device of claim 1, wherein:
the semiconductor device includes one of a filter, a duplexer, and a multiplexer.
27. A method for manufacturing a semiconductor device according to 1, comprising the steps of:
a group of resonator elements is formed on both sides of the substrate, respectively, each group of resonator elements having at least one resonator element.
28. The method of 27, wherein:
the substrate comprises a first substrate, a middle substrate and a second substrate which are sequentially connected with each other in the thickness direction of the substrate, wherein the first substrate corresponds to the first group of resonator units, and the second substrate corresponds to the second group of resonator units;
the first group of resonator units comprises single crystal acoustic wave resonator units, and the second group of resonator units comprises single crystal acoustic wave resonator units;
the method comprises the following steps: the first substrate and the second substrate are formed on the intermediate substrate in a bonding manner.
29. The method of 27, wherein:
the substrate includes a first substrate and a second substrate directly adjoining each other in a thickness direction of the substrate, the first substrate corresponding to a first group of resonator elements, the second substrate corresponding to a second group of resonator elements;
the first group of resonator units comprise single crystal acoustic wave resonator units, and the second group of resonator units comprise multi-crystal acoustic wave resonator units;
the method comprises the following steps: and connecting the first substrate and the second substrate in a bonding mode.
30. The method of 27, wherein:
the substrate is a single-layer substrate, and the first group of resonator units and the second group of resonator units share the single-layer substrate;
the first group of resonator units are surface acoustic wave resonator units, and the second group of resonator units are single crystal acoustic wave resonator units;
the method comprises the following steps: and connecting the single-layer substrate and the surface acoustic wave resonator unit in a bonding mode.
31. The method of 27, wherein:
the substrate includes a first substrate and a second substrate directly adjoining each other in a thickness direction of the substrate, the first substrate corresponding to a first group of resonator elements, the second substrate corresponding to a second group of resonator elements;
the first group of resonator units comprise piezoelectric film acoustic wave resonator units, and the second group of resonator units comprise single crystal acoustic wave resonator units;
the method comprises the following steps: and connecting the first substrate and the second substrate in a bonding mode.
32. The method of 27, wherein:
the substrate is a single-layer substrate, and the first group of resonator units and the second group of resonator units share the single-layer substrate;
the first group of resonator units comprise piezoelectric film surface acoustic wave resonator units, and the second group of resonator units are polycrystal acoustic wave resonator units.
The method comprises the following steps: and connecting the single-layer substrate with the piezoelectric thin-film surface acoustic wave resonator unit in a bonding mode.
33. An electronic device comprising a semiconductor device according to any of claims 1-26 or a semiconductor device manufactured according to the method of any of claims 27-32.
It should be noted that the electronic device herein includes, but is not limited to, intermediate products such as a radio frequency front end and a filtering and amplifying module, and terminal products such as a mobile phone, WIFI, and an unmanned aerial vehicle.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (18)
1. A semiconductor device, comprising:
a substrate having first and second sides opposite in a thickness direction of the substrate;
a first group of resonator units arranged on a first side of the substrate; and
a second group of resonator elements disposed on a second side of the substrate,
wherein:
the first group of resonator units and the second group of resonator units are all single crystal bulk acoustic wave resonator units;
the substrate comprises a first substrate, a second substrate and an intermediate substrate arranged between the first substrate and the second substrate in the thickness direction of the substrate, wherein the first substrate is provided with the first side, and the second substrate is provided with the second side;
the first substrate and the second substrate are respectively connected with the middle substrate, and the thickness of the middle substrate is greater than that of the first substrate and that of the second substrate and is at least 5 times greater than that of the first substrate or that of the second substrate;
the first substrate and the second substrate are both in bonding connection with the middle substrate.
2. The semiconductor device of claim 1, wherein:
the material of the first substrate and the second substrate is selected from at least one of silicon dioxide, silicon nitride, polycrystalline silicon and amorphous silicon, and the material of the intermediate substrate is selected from at least one of monocrystalline silicon, silicon carbide, quartz, gallium nitride, gallium arsenide, sapphire and diamond.
3. The semiconductor device of claim 1, wherein:
the thickness of the intermediate substrate is at least 10 times greater than the thickness of the first substrate or the second substrate.
4. A semiconductor device, comprising:
a substrate having first and second sides opposite in a thickness direction of the substrate;
a single crystal acoustic wave resonator unit disposed on a first side of the substrate; and
a poly-crystal acoustic resonator unit disposed on the second side of the substrate,
wherein:
the substrate comprises a first substrate and a second substrate connected to each other, the first substrate having the first side and the second substrate having the second side;
the first substrate and the second substrate are bonded and connected with each other;
the second substrate has a thickness at least 5 times the thickness of the first substrate.
5. The semiconductor device of claim 4, wherein:
the second substrate has a thickness at least 10 times the thickness of the first substrate.
6. The semiconductor device of claim 4, wherein:
the material of the first substrate is selected from at least one of silicon dioxide, silicon nitride, polycrystalline silicon and amorphous silicon;
the material of the second substrate is selected from at least one of monocrystalline silicon, silicon carbide, quartz, sapphire, gallium nitride, gallium arsenide and diamond.
7. A semiconductor device, comprising:
a substrate having first and second sides opposite in a thickness direction of the substrate;
the surface acoustic wave resonator unit is arranged on the first side of the substrate; and
a bulk acoustic wave resonator unit disposed at the second side of the substrate,
wherein:
the surface acoustic wave resonator unit comprises a piezoelectric film SAW unit, and the bulk acoustic wave resonator unit comprises a single crystal acoustic wave resonator unit;
the substrate comprises an FBAR substrate and an intermediate substrate;
the surface acoustic wave resonator unit comprises a Bragg reflection layer and an SAW piezoelectric layer, and the Bragg reflection layer is arranged between the middle substrate and the SAW piezoelectric layer;
the thickness of the middle substrate is larger than that of the FBAR substrate and the SAW piezoelectric layer, and the thickness of the middle substrate is at least 5 times that of the SAW piezoelectric layer or the FBAR substrate;
one side of the SAW piezoelectric layer is connected with the first side of the Bragg reflection layer, and the other side of the SAW piezoelectric layer is provided with a SAW electrical structure;
the second side of the Bragg reflection layer is connected with the first side of the middle substrate;
one side of the FBAR substrate is connected with the second side of the middle substrate, and the other side of the FBAR substrate is provided with an FBAR piezoelectric layer and an FBAR electrical structure.
8. The semiconductor device of claim 7, wherein:
the thickness of the intermediate substrate is at least 10 times the thickness of the SAW piezoelectric layer or the thickness of the FBAR substrate.
9. The semiconductor device of claim 7, wherein:
the FBAR substrate is made of at least one material selected from silicon dioxide, silicon nitride, polycrystalline silicon and amorphous silicon;
the material of the intermediate substrate is at least one of monocrystalline silicon, silicon carbide, quartz, sapphire, gallium nitride, gallium arsenide and diamond.
10. A semiconductor device, comprising:
a substrate having first and second sides opposite in a thickness direction of the substrate;
the surface acoustic wave resonator unit is arranged on the first side of the substrate; and
a bulk acoustic wave resonator unit disposed at the second side of the substrate,
wherein:
the surface acoustic wave resonator unit comprises a piezoelectric film SAW unit, the bulk acoustic wave resonator unit comprises a single crystal acoustic wave resonator unit, and the piezoelectric film SAW unit comprises an SAW piezoelectric layer;
the substrate comprises an FBAR substrate, the thickness of the FBAR substrate is at least 5 times the thickness of the SAW piezoelectric layer;
one side of the SAW piezoelectric layer is connected with the first side of the FBAR substrate, and the other side of the SAW piezoelectric layer is provided with a SAW electrical structure;
the second side of the FBAR substrate is provided with an FBAR piezoelectric layer and an FBAR electrical structure.
11. The semiconductor device of any of claims 1-10, wherein:
the semiconductor device includes one of a filter, a duplexer, and a multiplexer.
12. A method for manufacturing the semiconductor device according to claim 1, comprising the steps of:
a group of resonator units is formed on both sides of the substrate, respectively, each group of resonator units having at least one resonator unit.
13. The method of claim 12, wherein:
the substrate comprises a first substrate, a middle substrate and a second substrate which are sequentially connected with one another in the thickness direction of the substrate, wherein the first substrate corresponds to the first group of resonator units, and the second substrate corresponds to the second group of resonator units;
the first group of resonator units comprises single crystal acoustic wave resonator units, and the second group of resonator units comprises single crystal acoustic wave resonator units;
the method comprises the following steps: the first substrate and the second substrate are formed on the intermediate substrate in a bonding manner.
14. The method of claim 12, wherein:
the substrate includes a first substrate and a second substrate directly adjoining each other in a thickness direction of the substrate, the first substrate corresponding to a first group of resonator elements, the second substrate corresponding to a second group of resonator elements;
the first group of resonator units comprises single crystal acoustic wave resonator units, and the second group of resonator units comprises polycrystalline acoustic wave resonator units;
the method comprises the following steps: and bonding the first substrate and the second substrate.
15. The method of claim 12, wherein:
the substrate is a single-layer substrate, and the first group of resonator units and the second group of resonator units share the single-layer substrate;
the first group of resonator units are surface acoustic wave resonator units, and the second group of resonator units are single crystal acoustic wave resonator units;
the method comprises the following steps: and connecting the single-layer substrate and the surface acoustic wave resonator unit in a bonding mode.
16. The method of claim 12, wherein:
the substrate includes a first substrate and a second substrate directly connected to each other in a thickness direction of the substrate, the first substrate corresponding to the first group of resonator elements, the second substrate corresponding to the second group of resonator elements;
the first group of resonator units comprise piezoelectric film surface acoustic wave resonator units, and the second group of resonator units comprise single crystal acoustic wave resonator units;
the method comprises the following steps: and connecting the first substrate and the second substrate in a bonding mode.
17. The method of claim 12, wherein:
the substrate is a single-layer substrate, and the first group of resonator units and the second group of resonator units share the single-layer substrate;
the first group of resonator units comprise piezoelectric film surface acoustic wave resonator units, and the second group of resonator units are polycrystal acoustic wave resonator units.
The method comprises the following steps: and connecting the single-layer substrate and the piezoelectric thin-film surface acoustic wave resonator unit in a bonding mode.
18. An electronic device comprising a semiconductor device according to any of claims 1-11 or manufactured according to the method of any of claims 12-17.
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| CN202010260243.4A CN111564550B (en) | 2020-04-03 | 2020-04-03 | Semiconductor device, method of manufacturing the same, and electronic apparatus having the same |
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| KR101206030B1 (en) * | 2006-01-25 | 2012-11-28 | 삼성전자주식회사 | RF module, multi RF module, and method of fabricating thereof |
| JP4798496B2 (en) * | 2006-11-09 | 2011-10-19 | 宇部興産株式会社 | Thin film piezoelectric device and manufacturing method thereof |
| US20090079520A1 (en) * | 2007-09-20 | 2009-03-26 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustically coupled resonators having resonant transmission minima |
| US8018303B2 (en) * | 2007-10-12 | 2011-09-13 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic wave device |
| CN102437832A (en) * | 2012-01-05 | 2012-05-02 | 西安工业大学 | Hybrid integrated surface acoustic wave device structure |
| CN206658185U (en) * | 2017-03-07 | 2017-11-21 | 杭州左蓝微电子技术有限公司 | A kind of FBAR and wave filter |
| US11206008B2 (en) * | 2017-12-28 | 2021-12-21 | Intel Corporation | Hybrid filter architecture with integrated passives, acoustic wave resonators and hermetically sealed cavities between two resonator dies |
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| CN111030627A (en) * | 2019-12-31 | 2020-04-17 | 武汉衍熙微器件有限公司 | Method for manufacturing acoustic wave device and acoustic wave device |
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