CN114070233A - Bulk acoustic wave resonator, filter and electronic device with reduced parasitic mode - Google Patents
Bulk acoustic wave resonator, filter and electronic device with reduced parasitic mode Download PDFInfo
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- CN114070233A CN114070233A CN202010772882.9A CN202010772882A CN114070233A CN 114070233 A CN114070233 A CN 114070233A CN 202010772882 A CN202010772882 A CN 202010772882A CN 114070233 A CN114070233 A CN 114070233A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention relates to a bulk acoustic wave resonator and a method of manufacturing the same. The resonator includes: a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, wherein: the overlapping areas of the top electrode, the bottom electrode, the piezoelectric layer and the acoustic mirror form the active area of the resonator; in the void structure corresponding area, the edge of the piezoelectric layer is positioned outside the inner edge of the void structure in the horizontal direction, and the inner edge of the void structure and the edge of the piezoelectric layer have a first distance in the horizontal direction; in the area corresponding to the void structure, the edge of the piezoelectric layer is located inside the boundary of the acoustic mirror in the horizontal direction of the resonator and has a second distance from the boundary of the acoustic mirror in the horizontal direction. The invention also relates to a bulk acoustic wave resonator assembly, a filter and an electronic device.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator and a method of manufacturing the same, a bulk acoustic wave resonator assembly, a filter having the resonator or the assembly, and an electronic device.
Background
Electronic devices are widely used in our lives as basic elements of electronic equipment. Not only are various electronic devices filled in places such as mobile phones, automobiles, household appliances and the like which are commonly used at present, but also the technologies of artificial intelligence, Internet of things, 5G communication and the like of the world to be changed in the future still need to depend on the electronic devices as the foundation.
Electronic devices can exhibit different characteristics and advantages according to different operating principles, and among all electronic devices, devices operating by utilizing the piezoelectric effect (or the inverse piezoelectric effect) are an important class thereof. The film bulk acoustic resonator has the excellent characteristics of small size (mum level), high resonance frequency (GHz), high quality factor (1000), large power capacity, good roll-off effect and the like, the filter gradually replaces the traditional Surface Acoustic Wave (SAW) filter and ceramic filter, plays a great role in the field of wireless communication radio frequency, and the advantage of high sensitivity can also be applied to the sensing fields of biology, physics, medicine and the like. The FBAR mainly generates bulk acoustic waves by using the piezoelectric effect and the inverse piezoelectric effect of a piezoelectric material, so that resonance is formed in a device, and the FBAR has a series of inherent advantages of high quality factor, large power capacity, high frequency (up to 2-10GHz and even higher), good compatibility with a standard Integrated Circuit (IC), and the like, and can be widely applied to a radio frequency application system with higher frequency.
The structure body of the FBAR is a sandwich structure consisting of an electrode, a piezoelectric film and an electrode, namely a piezoelectric material layer is sandwiched between two metal electrode layers. By inputting a sinusoidal signal between the two electrodes, the FBAR converts the input electrical signal into mechanical resonance using the inverse piezoelectric effect, and converts the mechanical resonance into an electrical signal for output using the piezoelectric effect. Since the FBAR mainly generates a piezoelectric effect by using the longitudinal piezoelectric coefficient (d33) of the piezoelectric film, the main operation Mode thereof is a longitudinal wave Mode (TE Mode) in the Thickness direction.
Ideally, the thin film bulk acoustic resonator excites only a thickness direction (TE) mode, but generates a lateral parasitic mode in addition to a desired TE mode, such as a rayleigh-lamb mode which is a mechanical wave perpendicular to the direction of the TE mode. These transverse mode waves are lost at the boundaries of the resonator, thereby causing a loss of energy in the longitudinal mode required for the resonator, ultimately resulting in a decrease in the resonator Q-value.
In order to suppress the leakage of the lateral mode acoustic wave at the edge of the resonator, a bridge or a suspended wing structure is generally processed at the edge of the top electrode of the resonator, so that the lateral mode acoustic wave is limited in the active area of the resonator, and the Q value is improved. However, while the Q-factor of the resonator is increased, the parasitic modes in the resonator are increased due to the reflection of a large amount of transverse sound waves, thereby degrading the performance of the resonator.
Disclosure of Invention
The present invention has been made to mitigate or solve at least one of the above-mentioned problems in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a piezoelectric layer is formed on the substrate,
wherein:
the overlapping areas of the top electrode, the bottom electrode, the piezoelectric layer and the acoustic mirror form the active area of the resonator;
the top electrode is provided with a gap structure at the outer side of the effective area, and a gap is formed between the top electrode and the upper surface of the piezoelectric layer by the gap structure;
in the void structure corresponding area, the edge of the piezoelectric layer is positioned outside the inner edge of the void structure in the horizontal direction, and the inner edge of the void structure and the edge of the piezoelectric layer have a first distance in the horizontal direction;
in the area corresponding to the void structure, the edge of the piezoelectric layer is located inside the boundary of the acoustic mirror in the horizontal direction of the resonator and has a second distance from the boundary of the acoustic mirror in the horizontal direction.
Embodiments of the present invention also relate to a bulk acoustic wave resonator assembly, including at least two bulk acoustic wave resonators, wherein at least one of the at least two bulk acoustic wave resonators is the bulk acoustic wave resonator described above.
Embodiments of the present invention also relate to a method of manufacturing a bulk acoustic wave resonator, including the steps of:
providing a piezoelectric material layer on a substrate provided with a bottom electrode and an acoustic mirror;
removing a part of the piezoelectric material layer to form a piezoelectric layer in a region corresponding to the void structure, an edge of the piezoelectric layer being inside a boundary of the acoustic mirror in a horizontal direction;
and forming a top electrode, and arranging a gap structure at the electrode connecting end and/or the non-electrode connecting end of the top electrode, wherein the gap structure forms a gap between the top electrode and the upper surface of the piezoelectric layer, and the edge of the piezoelectric layer is positioned outside the inner edge of the gap structure in the horizontal direction at the corresponding area of the gap structure.
Embodiments of the present invention further relate to a filter comprising a bulk acoustic wave resonator or assembly as described above.
Embodiments of the invention also relate to an electronic device comprising a filter as described above or a resonator or an assembly as described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
figure 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line AA in FIG. 1;
3-7 are cross-sectional schematic diagrams of bulk acoustic wave resonators according to various exemplary embodiments of the present invention;
figures 8-9 are cross-sectional schematic views of bulk acoustic wave resonator assemblies according to various exemplary embodiments of the present invention;
fig. 10A to 10I are schematic structural views illustrating a manufacturing process of a bulk acoustic wave resonator according to an embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention. Some, but not all embodiments of the invention are described. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
In the invention, while the Q value of the resonator is increased based on the arrangement of the acoustic structure, the parasitic mode can be reduced by utilizing the mode of cutting off the piezoelectric layer.
Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, and fig. 2 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line AA in fig. 1, the cross-sectional view of fig. 2 being taken through an electrode connection end of a top electrode and a non-electrode connection end of a bottom electrode.
The reference numerals in the present invention are explained as follows:
100: the substrate can be selected from monocrystalline silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond and the like.
101: the acoustic mirror can be a cavity, and a Bragg reflection layer and other equivalent forms can also be adopted. The embodiment of the invention shown uses a cavity.
102: the bottom electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or their composite or their alloy.
103: the piezoelectric layer can be a single crystal piezoelectric material, and can be selected from the following: the material may be polycrystalline piezoelectric material (corresponding to single crystal, non-single crystal material), optionally, polycrystalline aluminum nitride, zinc oxide, PZT, or a rare earth element doped material containing at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), erbium (Ho), erbium (holmium), thulium (Tm), ytterbium (Yb), lutetium (Lu), or the like.
104: the top electrode can be made of the same material as the bottom electrode, and the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composite of the above metals or the alloy thereof, and the like. The top and bottom electrode materials are typically the same, but may be different.
105: and a bridge portion provided at an electrode connection end of the top electrode, and having a gap 106 provided thereunder.
106: it is within the scope of the present invention that the void, defined by the bridge, be between the bridge and the upper surface of the piezoelectric layer 103, be it an air gap, or be a dielectric layer.
107: and the suspension wings are arranged at the non-electrode connecting end of the top electrode, and gaps 108 are arranged below the suspension wings.
108: it is within the scope of the present invention that the air gap, which is defined by the suspension wings 107, be located between the suspension wings 107 and the upper surface of the piezoelectric layer 103, which may be an air gap, or a dielectric layer.
Although not shown, the top electrode of the resonator may also have a process layer disposed thereon, which may cover the top electrode, and which may function as a mass tuning load or passivation layer. The passivation layer may be made of dielectric material, such as silicon dioxide, aluminum nitride, silicon nitride, etc.
Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. Wherein 102 is a bottom electrode of the resonator, 101 is a cavity structure at the bottom of the resonator, 107 is a suspended wing mechanism positioned at the edge of a top electrode of the resonator, 108 is an air gap under the suspended wing structure, 104 is a top electrode of the resonator, 105 is a bridge structure at the edge of the top electrode of the resonator, and 106 is an air gap under the bridge structure. a is the distance between the edge of the resonator top electrode and the outside of the edge of the piezoelectric layer, b is the distance between the outside of the edge of the piezoelectric layer of the resonator and the edge of the cavity structure, and c is the distance between the outside of the edge of the resonator bottom electrode and the edge of the cavity structure.
Fig. 2 is a schematic cross-sectional view of the bulk acoustic wave resonator taken along line AA in fig. 1, and the bulk acoustic wave resonator includes a substrate 100, an acoustic mirror 101, a bottom electrode 102, a top electrode 104, and a piezoelectric layer 103. As shown in fig. 2, the electrode connection end of the top electrode is provided with a bridge portion 105, and a gap 106 is provided below the bridge portion. As shown in fig. 2, the non-electrode connecting end of the top electrode is provided with a suspension wing 107, and a gap 108 is provided below the suspension wing.
Referring to fig. 2, the distance between the edge of the piezoelectric layer 103 and the edge of the top electrode 104 of the resonator is a. In the present embodiment, the edge shape of the piezoelectric layer is vertical, but it can be any other shape such as inclined as can be appreciated, which is within the scope of the present invention. The distance between the edge of the piezoelectric layer 104 of the resonator and the edge of the cavity 101 is b. The distance between the edge of the acoustic mirror cavity 101 and the bottom electrode 102 is c, which is typically 0.5-10 μm.
In the embodiment shown in FIG. 2, the distance of a may be in the range of 0.5 μm to 10 μm; or the integral multiple of the half wavelength of the transverse wave, thereby playing the role of adjusting the transverse sound wave mode. Because the value of the transverse wave is integral multiple of half wavelength of the transverse wave, the interference superposition cancellation is carried out after the parasitic mode sound wave of the transverse mode is reflected at the edges of two sides of the distance a, and then the transverse sound wave mode is restrained, so that the sound wave energy leaked from the edge of the resonator is reduced, and the Q value of the resonator is improved, and the parasitic mode is reduced or even eliminated; b can be 0.5-10 μm, c can be 0.5-10 μm, and b and c can play a role of a common supporting structure, so that the structure of the resonator is more stable, and the resonator can be suitable for more complex environments. In addition, the bottom electrode 102 extends to the distance c outside the cavity, so that the bottom electrode can play a role of a supporting structure and also play a role of heat dissipation, and the power capacity of the resonator can be improved.
Fig. 3 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention, the structure of fig. 3 being substantially the same as in fig. 2 except that: in the embodiment shown in fig. 3, the air gap 106 below the bridge portion 105 is a stepped and small-spaced air gap. In fig. 3, the bridge portion 105 has a stepped shape corresponding to the layer structure of the resonator at the electrode connection end of the top electrode.
In fig. 2, since the air gap 106 under the bridge portion 105 in fig. 2 is an air gap having a large distance, the sacrificial layer needs to be planarized during the process. In fig. 3, because the distance of the air gap 106 is small, the process step of planarization can be simplified in the process of processing, so that the processing process becomes simpler, and the processing cost is reduced.
Fig. 4 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention, and the structure shown in fig. 4 is substantially the same as that in fig. 2 except that: in the embodiment shown in FIG. 4, a metal layer 300 is disposed over the edge of the bottom electrode 102; additionally, in fig. 4, the right side of the bridge bridges over the further piezoelectric layer.
In fig. 4, the position of the metal layer 300 covering the bottom electrode 102 is in an area outside the piezoelectric layer 103, and the inner end (left end in fig. 4) of the metal layer 300 is outside the inner edge of the bridge portion 105.
In fig. 4, the metal layer 300 can protect the bottom electrode during the process of etching the piezoelectric layer 103, and the metal layer 300 can also serve as a support structure and a heat sink, so that the resonator structure is more stable and the power capacity is further improved.
As mentioned earlier, the right portion of the bridge portion of the top electrode 104 in fig. 4 is provided on the piezoelectric layer on the right side, which can reduce the step difference of the top electrode at the bridge portion, improving the reliability of the device.
In an alternative embodiment, although not shown, the inner end of the metal layer 300 in fig. 4 may also be disposed between the piezoelectric layer and the bottom electrode, so that a step is formed at the end of the piezoelectric layer as shown in fig. 5 later, i.e. a step is formed at the piezoelectric layer outside the inner edge of the bridge, in other words, the metal layer 300 causes the piezoelectric layer 103 to produce a step at the area a. As can be understood, the inner edge of the stepped portion is located at the outer side of the inner edge of the bridge portion in the horizontal direction, and due to the existence of the plurality of reflection interfaces at the stepped portion, the interference superposition is cancelled after the sound wave of the transverse mode is reflected for a plurality of times, and then the sound wave of the transverse mode is suppressed, so that the energy of the sound wave leaking from the edge of the resonator is reduced, and finally the Q value of the resonator is improved, and the parasitic mode is reduced or even eliminated.
Fig. 5 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention, the structure in fig. 5 being substantially the same as that in fig. 2 except that: in fig. 5, the metal layer 400 is located at the bottom of the edge of the bottom electrode 102. This structure can play bearing structure and promotion radiating effect for the structure of resonator is more stable, power capacity further obtains promoting, and in addition, metal layer 400 makes piezoelectric layer 103 produce the step portion in region a, owing to there are a plurality of reflection interfaces in step portion department, can make the sound wave of transverse mode carry out interference stack after the multiple reflection and cancel out like this, and then the sound wave of transverse mode is suppressed, consequently, the sound wave energy of revealing from the resonator edge reduces, the Q value that embodies as the resonator finally is worth improving and reduces or even eliminates parasitic mode.
In the embodiment shown in fig. 1-5, the piezoelectric layer is truncated with respect to the piezoelectric layer of the ordinary resonator in the area of the bridge, so that the end of the piezoelectric layer is inside the boundary of the acoustic mirror and the end of the piezoelectric layer is outside the inner edge of the bridge.
However, the invention is not limited thereto, and similar designs may be made in the area of the overhang of the top electrode, for example. In the case where the area of the suspension wings is truncated to the piezoelectric layer, the end or edge of the piezoelectric layer is horizontally inside the boundary of the acoustic mirror, and the end of the piezoelectric layer is outside the outer edge of the suspension wings.
As shown in fig. 6, which is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention, in fig. 6, 100 is a base, 101 is an acoustic mirror cavity, 102 is a bottom electrode, 103 is a piezoelectric layer, 104 is a top electrode, 105 is a bridge structure, 106 is an air gap under the bridge structure, 107 is a suspension wing structure, and 108 is an air gap under the suspension wing structure. In the specific example shown in fig. 6, on the side of the suspension wing, the piezoelectric layer is cut off, i.e. the piezoelectric layer is cut off in the acoustic cavity but the end of the piezoelectric layer is located outside the outer edge of the suspension wing structure, i.e. the end of the piezoelectric layer is at a distance b from the edge of the cavity structure and a from the outer edge of the suspension wing structure. Because the step exists at the end part of the piezoelectric layer and the plurality of reflection interfaces exist at the step, the interference superposition is cancelled after the sound wave of the transverse mode is reflected for a plurality of times, and then the sound wave of the transverse mode is suppressed, so that the energy of the sound wave leaking from the edge of the resonator is reduced, and finally the Q value of the resonator is improved, and the parasitic mode is reduced or even eliminated.
Although not shown, in an alternative embodiment, the edge or end of the piezoelectric layer is horizontally inboard of the outer edge of the cantilever 107 and outboard of the inner edge of the cantilever 107 at the non-electrode connection end of the top electrode.
Fig. 7 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention, in the embodiment shown in fig. 7 the piezoelectric layer is truncated at both the overhanging wing end and the electrode connection end of the top electrode, in the particular example shown in fig. 7 the left edge of the piezoelectric layer is truncated within the acoustic cavity but outside the outer edge of the overhanging wing structure, and the right edge of the piezoelectric layer is located between the inner edge of the acoustic air gap and the outer side of the inner edge under the bridge structure. In the case where the area of the overhanging wings is truncated to the piezoelectric layer, a metal layer structure similar to that shown in fig. 4 and 5 can also be used.
In the present invention, both the suspension wings and the bridge portion are void structures of the resonator as acoustic structures. The piezoelectric layer may be cut off only in the area of the bridge as shown in fig. 1-5, only in the area of the suspension wings as shown in fig. 6, or both in the areas of the suspension wings and the bridge as shown in fig. 7.
Fig. 8 is a schematic cross-sectional view of a bulk acoustic wave resonator assembly according to another exemplary embodiment of the present invention, in fig. 8, top electrodes of two resonators are connected together, wherein the left-side resonator and the right-side resonator are both resonators according to the present invention, such as shown in fig. 4, but, as can be appreciated by those skilled in the art, the metal layer 300 may not be provided, or the metal layer 300 may be replaced with the metal layer 400. In addition, in the assembly in fig. 8, one of the two resonators may also be a conventional resonator that does not include a truncated piezoelectric layer. These are all within the scope of the present invention.
Fig. 9 is a schematic cross-sectional view of a bulk acoustic wave resonator assembly according to another exemplary embodiment of the present invention. In fig. 9, a case where two resonators are combined together, in which the top electrode of the left-side resonator and the bottom electrode of the right-side resonator are connected together. In fig. 9, the resonator on the left side is the resonator of fig. 2, and the resonator on the right side is a usual resonator not provided with a truncated piezoelectric layer. As can be appreciated, the resonator on the left in fig. 9 can also be the resonator of fig. 3 and 5, and the resonator on the right can also be the resonator according to the invention provided with a truncated piezoelectric layer. This is within the scope of the invention.
The following describes an example of a process of fabricating a bulk acoustic wave resonator according to the embodiment shown in fig. 2 with reference to fig. 10A to 10I.
Step 1: as shown in fig. 10A, a cavity (corresponding to an acoustic mirror cavity) is formed on a substrate 100 using an ion etching process.
Step 2: as shown in fig. 10B, a layer of sacrificial material 501, which may be polysilicon, amorphous silicon, silicon dioxide, doped silicon dioxide, etc., is deposited over the cavity and substrate.
And step 3: as shown in fig. 10C, the excess sacrificial material layer 501 is removed by a CMP (chemical mechanical polishing) method and the sacrificial material layer 501 is polished flat until it is flush with the upper surface of the substrate 100.
And 4, step 4: as shown in fig. 10D, a metal layer is deposited on the surfaces of the substrate 100 and the sacrificial material layer 501 by a sputtering or evaporation process, and the metal layer is patterned by a photolithography and etching process to form the bottom electrode 102, as shown in fig. 10D, the edge of the bottom electrode is outside the boundary of the cavity corresponding to the sacrificial material layer 501.
And 5: as shown in fig. 10E, a piezoelectric material layer is deposited on the surfaces of the substrate 100 and the bottom electrode 102 and patterned by photolithography, etching, etc. to form the piezoelectric layer 103, as shown in fig. 10E, a right end or a right edge of the piezoelectric layer 103 is located inside a boundary of the cavity corresponding to the sacrificial material layer 501.
Step 6: as shown in fig. 10F, a sacrificial material layer 502, which may be the same or different from the sacrificial material layer 501 of the bottom cavity, is deposited on the surfaces of the piezoelectric layer 103, the bottom electrode 102 and the substrate 100.
And 7: as shown in fig. 10G, the sacrificial material layer 502 is planarized by a CMP (chemical mechanical polishing) process to form the structure shown in fig. 10G. In fig. 10G, the ground-down layer of sacrificial material 502 still covers the upper surface of the piezoelectric layer 103.
And 8: as shown in fig. 10H, the sacrificial material layer 502 is patterned by photolithography, etching, etc. to obtain the structure shown in fig. 10H, the patterned sacrificial material layer 502 on the left side is used for forming the voids 108 corresponding to the overhanging wings of the top electrode, and the patterned sacrificial material layer 502 on the right side is used for forming the voids 106 corresponding to the bridge portions of the top electrode.
And step 9: as shown in fig. 10I, a metal layer is deposited on the surface of the sacrificial material layer 502 and patterned into the top electrode 104, and the top electrode 104 includes the suspension wings 107 and the bridge part 105.
Step 10: the sacrificial material layers 502 and 501 are released to form air gaps 108 and 106 under the suspension wings 107 and bridge 106, and an air cavity 101 at the bottom of the resonator, resulting in the structure of the present invention shown in fig. 2.
It is to be noted that, in the present invention, each numerical range, except when explicitly indicated as not including the end points, can be either the end points or the median of each numerical range, and all fall within the scope of the present invention.
In the present invention, the upper and lower are with respect to the bottom surface of the base of the resonator, and with respect to one component, the side thereof close to the bottom surface is the lower side, and the side thereof far from the bottom surface is the upper side.
In the present invention, the inner and outer are in the lateral direction or the radial direction with respect to the center of the effective area (i.e., the effective area center) of the resonator (the overlapping area of the piezoelectric layer, the top electrode, the bottom electrode, and the acoustic mirror in the thickness direction of the resonator constitutes the effective area), the side or end of a member close to the effective area center is the inner side or the inner end, and the side or end of the member away from the effective area center is the outer side or the outer end. For a reference position, being inside of the position means being between the position and the center of the effective area in the lateral or radial direction, and being outside of the position means being further away from the center of the effective area than the position in the lateral or radial direction.
As can be appreciated by those skilled in the art, the bulk acoustic wave resonator according to the present invention may be used to form a filter or an electronic device. The electronic device includes, but is not limited to, intermediate products such as a radio frequency front end and a filtering and amplifying module, and terminal products such as a mobile phone, WIFI and an unmanned aerial vehicle.
Based on the above, the invention provides the following technical scheme:
1. a bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a piezoelectric layer is formed on the substrate,
wherein:
the overlapping areas of the top electrode, the bottom electrode, the piezoelectric layer and the acoustic mirror form the active area of the resonator;
the top electrode is provided with a gap structure at the outer side of the effective area, and a gap is formed between the top electrode and the upper surface of the piezoelectric layer by the gap structure;
in the void structure corresponding area, the edge of the piezoelectric layer is positioned outside the inner edge of the void structure in the horizontal direction, and the inner edge of the void structure and the edge of the piezoelectric layer have a first distance in the horizontal direction;
in the area corresponding to the void structure, the edge of the piezoelectric layer is located inside the boundary of the acoustic mirror in the horizontal direction of the resonator and has a second distance from the boundary of the acoustic mirror in the horizontal direction.
2. The resonator of claim 1, wherein:
the first distance is in the range of 0.5-10 μm.
3. The resonator of claim 1, wherein:
the first distance is an integral multiple of a half wavelength of a shear wave of the resonator.
4. The resonator of claim 1, wherein:
the second distance is in the range of 0.5 μm to 10 μm.
5. The resonator of claim 1, wherein:
in the void structure corresponding region, an edge of the non-electrode connection end of the bottom electrode is located outside a boundary of the acoustic mirror in the horizontal direction and has a third distance from the boundary of the acoustic mirror in the horizontal direction.
6. The resonator of claim 5, wherein:
the third distance is in the range of 0.5 μm to 10 μm.
7. The resonator of claim 1, wherein:
in the corresponding area of the void structure, the edge of the piezoelectric layer is an inclined plane, and the inclined plane and the upper surface of the bottom electrode form an acute angle.
8. The resonator of claim 5, wherein:
the resonator is provided with a metal layer, the metal layer covers the area, located on the outer side of the piezoelectric layer, of the bottom electrode in the area corresponding to the gap structure, and the inner end of the metal layer is located on the outer side of the inner edge of the gap structure.
9. The resonator of claim 8, wherein:
the inner end of the metal layer is between the piezoelectric layer and the bottom electrode such that there is a step portion of the piezoelectric layer outside the inner edge of the void structure, the inner edge of the step portion of the piezoelectric layer being outside the inner edge of the void structure in the horizontal direction.
10. The resonator of claim 5, wherein:
the resonator is provided with a metal layer which is arranged between the bottom electrode and the substrate in a corresponding area of the gap structure so that a step part exists on the piezoelectric layer outside the inner edge of the gap structure, and the inner edge of the step part is outside the inner edge of the gap structure in the horizontal direction.
11. The resonator of claim 10, wherein:
the metal layer is disposed between the bottom electrode and the substrate such that a step portion exists at a non-electrode connection end of the bottom electrode, and an inner edge of the step portion at the non-electrode connection end of the bottom electrode is located outside a boundary of the effective region in a horizontal direction.
12. The resonator of any of claims 1-11, wherein:
the void structure includes a bridge portion disposed at an electrode connection end of the top electrode.
13. The resonator of claim 12, wherein:
the bridge portion has a step shape corresponding to a layer structure of the resonator at an electrode connection end of the top electrode.
14. The resonator of claim 12, wherein:
a top electrode metal layer on the outside of the bridge overlies a further piezoelectric layer which is spaced horizontally from the non-electrode connecting end of the bottom electrode.
15. The resonator of claim 12, wherein:
and the top electrode metal layer at the outer side of the bridge part covers the upper surface of the substrate.
16. The resonator of any of claims 1-15, wherein:
the void structure includes a cantilevered wing disposed at the non-electrode connection end of the top electrode.
17. The resonator of claim 16, wherein:
at the non-electrode connecting end of the top electrode, the edge of the piezoelectric layer is located inside the outer edge of the suspension wing and outside the inner edge of the suspension wing in the horizontal direction.
18. A bulk acoustic wave resonator assembly comprising:
at least two bulk acoustic wave resonators, wherein at least one of the at least two bulk acoustic wave resonators is a bulk acoustic wave resonator according to any of claims 1-17.
19. The assembly of claim 18, wherein:
the at least two bulk acoustic wave resonators comprise two resonators adjacent to each other, and the two resonators are the resonators according to 14;
the top electrodes of the two resonators are connected to each other.
20. The assembly of claim 18, wherein:
the at least two bulk acoustic wave resonators comprise two resonators adjacent to each other, the two resonators being the resonator according to 15;
the top electrode of one of the two resonators is connected to the bottom electrode of the other resonator.
21. A method of manufacturing a bulk acoustic wave resonator, comprising the steps of:
providing a piezoelectric material layer on a substrate provided with a bottom electrode and an acoustic mirror;
removing a part of the piezoelectric material layer to form a piezoelectric layer in a region corresponding to the void structure, an edge of the piezoelectric layer being inside a boundary of the acoustic mirror in a horizontal direction;
and forming a top electrode, and arranging a gap structure at the electrode connecting end and/or the non-electrode connecting end of the top electrode, wherein the gap structure forms a gap between the top electrode and the upper surface of the piezoelectric layer, and the edge of the piezoelectric layer is positioned outside the inner edge of the gap structure in the horizontal direction at the corresponding area of the gap structure.
22. The method of claim 21, wherein:
the edge of the non-electrode connecting end of the bottom electrode is positioned outside the boundary of the acoustic mirror.
23. The method of claim 21, wherein:
in the step of forming the top electrode, an electrode connection end of the top electrode is provided with a bridge portion;
in the step of removing part of the piezoelectric material layer to form the piezoelectric layer, an edge of the piezoelectric layer at the electrode connection end of the top electrode is made to be outside an inner edge of the bridge portion in a horizontal direction.
24. A filter comprising a bulk acoustic wave resonator according to any one of claims 1-17 or a bulk acoustic wave resonator assembly according to any one of claims 18-20.
25. An electronic device comprising a filter according to claim 24, or a bulk acoustic wave resonator according to any of claims 1-17, or a bulk acoustic wave resonator assembly according to any of claims 18-20.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (25)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a piezoelectric layer is formed on the substrate,
wherein:
the overlapping areas of the top electrode, the bottom electrode, the piezoelectric layer and the acoustic mirror form the active area of the resonator;
the top electrode is provided with a gap structure at the outer side of the effective area, and a gap is formed between the top electrode and the upper surface of the piezoelectric layer by the gap structure;
in the void structure corresponding area, the edge of the piezoelectric layer is positioned outside the inner edge of the void structure in the horizontal direction, and the inner edge of the void structure and the edge of the piezoelectric layer have a first distance in the horizontal direction;
in the area corresponding to the void structure, the edge of the piezoelectric layer is located inside the boundary of the acoustic mirror in the horizontal direction of the resonator and has a second distance from the boundary of the acoustic mirror in the horizontal direction.
2. The resonator of claim 1, wherein:
the first distance is in the range of 0.5-10 μm.
3. The resonator of claim 1, wherein:
the first distance is an integral multiple of a half wavelength of a shear wave of the resonator.
4. The resonator of claim 1, wherein:
the second distance is in the range of 0.5 μm to 10 μm.
5. The resonator of claim 1, wherein:
in the void structure corresponding region, an edge of the non-electrode connection end of the bottom electrode is located outside a boundary of the acoustic mirror in the horizontal direction and has a third distance from the boundary of the acoustic mirror in the horizontal direction.
6. The resonator of claim 5, wherein:
the third distance is in the range of 0.5 μm to 10 μm.
7. The resonator of claim 1, wherein:
in the corresponding area of the void structure, the edge of the piezoelectric layer is an inclined plane, and the inclined plane and the upper surface of the bottom electrode form an acute angle.
8. The resonator of claim 5, wherein:
the resonator is provided with a metal layer, the metal layer covers the area, located on the outer side of the piezoelectric layer, of the bottom electrode in the area corresponding to the gap structure, and the inner end of the metal layer is located on the outer side of the inner edge of the gap structure.
9. The resonator of claim 8, wherein:
the inner end of the metal layer is between the piezoelectric layer and the bottom electrode such that there is a step portion of the piezoelectric layer outside the inner edge of the void structure, the inner edge of the step portion of the piezoelectric layer being outside the inner edge of the void structure in the horizontal direction.
10. The resonator of claim 5, wherein:
the resonator is provided with a metal layer which is arranged between the bottom electrode and the substrate in a corresponding area of the gap structure so that a step part exists on the piezoelectric layer outside the inner edge of the gap structure, and the inner edge of the step part is outside the inner edge of the gap structure in the horizontal direction.
11. The resonator of claim 10, wherein:
the metal layer is disposed between the bottom electrode and the substrate such that a step portion exists at a non-electrode connection end of the bottom electrode, and an inner edge of the step portion at the non-electrode connection end of the bottom electrode is located outside a boundary of the effective region in a horizontal direction.
12. The resonator of any of claims 1-11, wherein:
the void structure includes a bridge portion disposed at an electrode connection end of the top electrode.
13. The resonator of claim 12, wherein:
the bridge portion has a step shape corresponding to a layer structure of the resonator at an electrode connection end of the top electrode.
14. The resonator of claim 12, wherein:
a top electrode metal layer on the outside of the bridge overlies a further piezoelectric layer which is spaced horizontally from the non-electrode connecting end of the bottom electrode.
15. The resonator of claim 12, wherein:
and the top electrode metal layer at the outer side of the bridge part covers the upper surface of the substrate.
16. The resonator of any of claims 1-15, wherein:
the void structure includes a cantilevered wing disposed at the non-electrode connection end of the top electrode.
17. The resonator of claim 16, wherein:
at the non-electrode connecting end of the top electrode, the edge of the piezoelectric layer is located inside the outer edge of the suspension wing and outside the inner edge of the suspension wing in the horizontal direction.
18. A bulk acoustic wave resonator assembly comprising:
at least two bulk acoustic wave resonators, wherein at least one of the at least two bulk acoustic wave resonators is a bulk acoustic wave resonator according to any of claims 1-17.
19. The assembly of claim 18, wherein:
the at least two bulk acoustic wave resonators comprising two resonators adjacent to each other, the two resonators being the resonator of claim 14;
the top electrodes of the two resonators are connected to each other.
20. The assembly of claim 18, wherein:
the at least two bulk acoustic wave resonators comprising two resonators adjacent to each other, the two resonators being the resonator of claim 15;
the top electrode of one of the two resonators is connected to the bottom electrode of the other resonator.
21. A method of manufacturing a bulk acoustic wave resonator, comprising the steps of:
providing a piezoelectric material layer on a substrate provided with a bottom electrode and an acoustic mirror;
removing a part of the piezoelectric material layer to form a piezoelectric layer in a region corresponding to the void structure, an edge of the piezoelectric layer being inside a boundary of the acoustic mirror in a horizontal direction;
and forming a top electrode, and arranging a gap structure at the electrode connecting end and/or the non-electrode connecting end of the top electrode, wherein the gap structure forms a gap between the top electrode and the upper surface of the piezoelectric layer, and the edge of the piezoelectric layer is positioned outside the inner edge of the gap structure in the horizontal direction at the corresponding area of the gap structure.
22. The method of claim 21, wherein:
the edge of the non-electrode connecting end of the bottom electrode is positioned outside the boundary of the acoustic mirror.
23. The method of claim 21, wherein:
in the step of forming the top electrode, an electrode connection end of the top electrode is provided with a bridge portion;
in the step of removing part of the piezoelectric material layer to form the piezoelectric layer, an edge of the piezoelectric layer at the electrode connection end of the top electrode is made to be outside an inner edge of the bridge portion in a horizontal direction.
24. A filter comprising the bulk acoustic wave resonator according to any one of claims 1-17 or the bulk acoustic wave resonator assembly according to any one of claims 18-20.
25. An electronic device comprising a filter according to claim 24, or a bulk acoustic wave resonator according to any of claims 1-17, or a bulk acoustic wave resonator assembly according to any of claims 18-20.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114900151A (en) * | 2022-05-20 | 2022-08-12 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonator and preparation method thereof |
| CN116111967A (en) * | 2023-04-13 | 2023-05-12 | 武汉敏声新技术有限公司 | Method for manufacturing resonator and resonator |
| CN117013978A (en) * | 2022-12-14 | 2023-11-07 | 北京芯溪半导体科技有限公司 | Bulk acoustic wave resonator, preparation method thereof, filter and electronic equipment |
| CN117081533A (en) * | 2022-12-14 | 2023-11-17 | 北京芯溪半导体科技有限公司 | Bulk acoustic wave resonator, preparation method thereof, filter and electronic equipment |
| WO2024040678A1 (en) * | 2022-08-26 | 2024-02-29 | 见闻录(浙江)半导体有限公司 | Bulk acoustic resonator, resonator assembly, filter, and electronic device |
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2020
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114900151A (en) * | 2022-05-20 | 2022-08-12 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonator and preparation method thereof |
| CN114900151B (en) * | 2022-05-20 | 2024-05-10 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonator and preparation method thereof |
| WO2024040678A1 (en) * | 2022-08-26 | 2024-02-29 | 见闻录(浙江)半导体有限公司 | Bulk acoustic resonator, resonator assembly, filter, and electronic device |
| CN117013978A (en) * | 2022-12-14 | 2023-11-07 | 北京芯溪半导体科技有限公司 | Bulk acoustic wave resonator, preparation method thereof, filter and electronic equipment |
| CN117081533A (en) * | 2022-12-14 | 2023-11-17 | 北京芯溪半导体科技有限公司 | Bulk acoustic wave resonator, preparation method thereof, filter and electronic equipment |
| CN117081533B (en) * | 2022-12-14 | 2024-06-04 | 北京芯溪半导体科技有限公司 | Bulk acoustic wave resonator, preparation method thereof, filter and electronic equipment |
| CN116111967A (en) * | 2023-04-13 | 2023-05-12 | 武汉敏声新技术有限公司 | Method for manufacturing resonator and resonator |
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