CN115477278A - Preparation method of electrostatic comb driven MEMS (micro-electromechanical system) micromirror, MEMS micromirror and spectrometer - Google Patents
Preparation method of electrostatic comb driven MEMS (micro-electromechanical system) micromirror, MEMS micromirror and spectrometer Download PDFInfo
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- G—PHYSICS
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- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00317—Packaging optical devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
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Abstract
The invention provides an electrostatic comb driven MEMS micro-mirror preparation method, an MEMS micro-mirror and a spectrometer, wherein the MEMS micro-mirror is processed by utilizing a semiconductor manufacturing technology, the torsion angle of the micro-mirror can be improved, and the collection of optical signals with larger field angle can be realized.
Description
Technical Field
The invention relates to the technical field of MEMS (micro-electromechanical systems) micro-mirrors, in particular to a preparation method of an electrostatic comb driven MEMS micro-mirror, an MEMS micro-mirror and a spectrometer.
Background
The near infrared (NIR spectrum wavelength range 800-2500nm, rich information of most organic matter compositions and molecular structures, mainly containing hydrogen groups C-H, O-H, N-H, S-H absorption, NIR is rapid and lossless, can realize simultaneous measurement of multiple components, and is widely used in the fields of petrochemical industry, pharmacy, agriculture and the like).
The optical scanning mirror is an important core device of an optical application system, and can guide a beam of light to different directions. With the development of micro-electro-mechanical systems (MEMS), optical devices are gradually developed to have low cost, small size, and light weight, and the transition from static to dynamic is realized. MEMS scanning mirrors have been widely used in fields including laser imaging, image digitization, quality inspection, and medical imaging. MEMS scanning mirrors can be divided into electrostatic, electromagnetic, thermoelectric, and piezoelectric drives depending on their manner of drive. The electrostatic drive MEMS scanning mirror is generally simple in manufacturing process, compact in structure, compatible with semiconductor micromachining technology, free of rare materials like piezoelectric and electromagnetic devices, and has higher driving frequency than thermoelectric drive. The electrostatic actuator structure is generally of a flat plate drive type and a comb-tooth drive type. In the flat-panel driving structure, the micro-mirror surface torsion requires a higher driving voltage; and the comb teeth driving structure can obtain a larger torsion angle under a smaller driving voltage, so that the comb teeth driving structure has greater advantages in practical application.
The existing MEMS scanning mirror generally only has the function of a scanning mirror, and needs to be matched with a grating for use when in use, when a spectrometer is built, a light path is complex, the energy loss of light is large, in addition, the MEMS scanning mirror in the prior art generally adopts the unilateral movable comb tooth electrode and the static comb tooth electrode to be matched, only one side can deflect, the deflection angle is small, if the deflection is realized towards two sides, a plurality of groups of movable comb tooth electrodes and static comb tooth electrodes need to be etched independently, and the processing technology is complex.
Disclosure of Invention
The present invention provides a method for manufacturing an electrostatic comb driven MEMS micro-mirror, an MEMS micro-mirror, and a spectrometer, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme:
a preparation method of an electrostatic comb driven MEMS micro-mirror comprises the following specific steps:
s1, etching a deep square movable groove on a first silicon wafer to serve as a rotation space of a mirror surface, and etching comb tooth structures on the front side wall and the rear side wall of the movable groove to serve as static comb tooth electrodes;
s2, symmetrically thermally oxidizing the side walls of the movable groove to form insulating layers with certain widths along the symmetrical axis direction of the static comb tooth electrodes on the two sides of the movable groove, and enabling the static comb tooth electrodes on the two sides to be relatively insulated;
s3, performing thermal oxidation on the upper surface of the first silicon wafer or the lower surface of the second silicon wafer to form a thermal oxide layer, fully cleaning the surface, and bonding the oxide layers of the two silicon wafers together by using a bonding process, wherein the second silicon wafer is positioned above the first silicon wafer;
s4, etching a grating mirror surface positioned in the middle on a second silicon wafer, etching torsion beams at two ends of the grating mirror surface, etching movable comb-tooth electrodes in a comb-tooth structure at two ends of the grating mirror surface vertical to the torsion beams, wherein the movable comb-tooth electrodes are positioned right above gaps between adjacent static comb-tooth electrodes, and the width of the gaps between the adjacent static comb-tooth electrodes is larger than that of the movable comb-tooth electrodes;
s5, etching a plurality of groups of mutually parallel grating lines on the upper surface of the grating mirror surface;
and S6, depositing an aluminum metal layer on the upper surface of the grating mirror surface in a magnetron sputtering mode by using the photoresist as a mask, and removing the photoresist.
In one embodiment, the etching method used when the first silicon wafer and the second silicon wafer are etched is a deep silicon etching technique.
In one embodiment, the thickness of the first silicon wafer is 200 μm, and after the oxide layers of the two silicon wafers are bonded together in step S3, the second silicon wafer is thinned to 75 μm.
In one embodiment, the grating scribe direction and the torsion beam orientation etched in step S5 remain the same.
In one embodiment, in the step S6, an aluminum metal layer is deposited on the surfaces of the static comb-tooth electrode and the moving comb-tooth electrode by using a magnetron sputtering method, and the thickness of the aluminum metal layer deposited on the surfaces of the grating mirror surface, the static comb-tooth electrode and the moving comb-tooth electrode is 300nm.
The invention also provides an electrostatic comb driven MEMS micro-mirror, which is prepared by the preparation method and comprises the following steps:
the first silicon wafer layer comprises first frames, static comb tooth electrodes and insulating layers which are integrally connected, the first frames are symmetrically provided with two groups and are connected through the insulating layers, and the static comb tooth electrodes are arranged on the inner side of the first frames;
the second silicon wafer layer comprises a second frame, a movable comb tooth electrode, a grating mirror surface and a torsion beam which are integrally connected, the middle part of the second frame is provided with the grating mirror surface, two sides of the grating mirror surface are connected with the inner side of the second frame through the torsion beam, two sides of the grating mirror surface are provided with the movable comb tooth electrode perpendicular to the torsion beam, the width of a gap between adjacent static comb tooth electrodes is larger than that of the movable comb tooth electrode, and the grating mirror surface is provided with a plurality of groups of grating groove lines which are parallel to each other;
the oxidation layer is formed by thermal oxidation of the upper surface of a first silicon wafer or the lower surface of a second silicon wafer, the first silicon wafer layer and the second silicon wafer layer are bonded together with the oxidation layer through a bonding process, and the movable comb-tooth electrode is positioned right above a gap between adjacent static comb-tooth electrodes;
and the metal layer is an aluminum metal layer and is deposited on the upper surface of the grating mirror surface.
In one embodiment, the first silicon wafer layer has a thickness of 200 μm and the second silicon wafer layer has a thickness of 75 μm.
In one embodiment, the grating ruling direction and the torsion beam orientation remain the same.
In one embodiment, the surfaces of the static comb-tooth electrode and the moving comb-tooth electrode are also deposited with aluminum metal layers, and the thickness of the aluminum metal layers deposited on the surfaces of the grating mirror surface, the static comb-tooth electrode and the moving comb-tooth electrode is 300nm.
The invention also provides a spectrometer, wherein the spectrometer comprises an optical fiber, a collimating mirror, a grating micro mirror, a focusing mirror and a photoelectric detector, light rays emitted by the optical fiber are reflected to the grating micro mirror through the collimating mirror, are reflected to the focusing mirror after being split by the grating micro mirror, are reflected to the photoelectric detector after being focused by the focusing mirror, and the grating micro mirror adopts the MEMS micro mirror driven by the electrostatic comb.
Compared with the prior art, the invention has the beneficial effects that:
the MEMS micromirror is processed by utilizing a semiconductor manufacturing technology, so that the deflection angle of the micromirror can be improved, the acquisition of optical signals with larger field angle can be realized, in addition, the grating and the rotating micromirror of the traditional micro spectrometer are combined, the optical path is simplified on the premise of not influencing the light beam distribution, therefore, the energy loss is reduced, the design structure that the movable comb-tooth electrode is positioned on two sides of the grating mirror surface is adopted, the grating mirror surface can deflect towards two sides by matching with the static comb-tooth electrodes with opposite insulation on two sides, the deflection angle is larger, the first silicon wafer and the second silicon wafer are of an integral structure, only the first silicon wafer and the second silicon wafer need to be etched, and the processing technology is simpler.
Drawings
FIG. 1 is a schematic flow chart of the production process of the present invention;
FIG. 2 is an exploded view of the MEMS micro-mirror of the present invention;
FIG. 3 is a schematic top view of the static comb electrode and the moving comb electrode according to the present invention;
FIG. 4 is a schematic diagram of a first silicon wafer layer according to the present invention;
FIG. 5 is a schematic diagram of a second silicon wafer layer according to the present invention;
FIG. 6 is a schematic diagram of an overall structure of the MEMS micro-mirror of the present invention.
In the figure: 100 first silicon wafer layer, 110 first frame, 120 movable groove, 130 insulating layer, 140 static comb electrode, 200 second silicon wafer layer, second frame 210, 220 grating mirror surface, 230 torsion beam, 240 movable comb electrode, 250 grating groove, 300 oxide layer and 400 metal layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Example (b):
referring to fig. 1, the present invention provides a technical solution:
a preparation method of an electrostatic comb driven MEMS micro-mirror comprises the following specific steps:
s1, etching a deep square movable groove on a first silicon wafer to serve as a rotation space of a mirror surface, and etching comb tooth structures on the front side wall and the rear side wall of the movable groove to serve as static comb tooth electrodes.
The thickness of the first silicon wafer is 200 microns, and the size of the movable groove is larger than that of the grating mirror surface, so that the grating mirror surface can rotate in the movable groove.
And S2, symmetrically thermally oxidizing the side walls of the movable groove to form insulating layers with certain widths along the symmetrical axis direction of the static comb tooth electrodes on the two sides of the movable groove, so that the static comb tooth electrodes on the two sides are relatively insulated.
The oxidized insulating layer is made of silicon dioxide, is obtained by oxidizing a silicon wafer, has a width of 600nm, and can effectively insulate the static comb teeth electrodes on the two sides relatively.
And S3, carrying out thermal oxidation on the upper surface of the first silicon wafer or the lower surface of the second silicon wafer to form a thermal oxidation layer, fully cleaning the surface, and bonding the oxidation layers of the two silicon wafers together by using a bonding process, wherein the second silicon wafer is positioned above the first silicon wafer.
The oxide layer is obtained by thermally oxidizing the upper surface of the first silicon wafer and the lower surface of the second silicon wafer or oxidizing both the upper surface and the lower surface of the second silicon wafer, the first silicon wafer and the second silicon wafer are bonded together through the oxide layer, the thickness of the oxide layer is 600nm, relative insulation between the first silicon wafer and the second silicon wafer is effectively guaranteed, the second silicon wafer is thinned to 75 microns after bonding, and the size of the first silicon wafer is the same as that of the second silicon wafer.
And S4, etching a grating mirror surface positioned in the middle on the second silicon wafer, etching torsion beams at two ends of the grating mirror surface, etching movable comb-tooth electrodes in a comb-tooth structure at two ends of the grating mirror surface vertical to the torsion beams, wherein the movable comb-tooth electrodes are positioned right above gaps between adjacent static comb-tooth electrodes, and the width of the gaps between the adjacent static comb-tooth electrodes is larger than that of the movable comb-tooth electrodes.
Wherein, the grating mirror surface can rotate around torsion beam, the space depth between the adjacent quiet broach electrode is greater than the length of moving the broach electrode, with quiet broach electrode ground connection, when moving the broach electrode and exerting voltage, form capacitive effect perpendicularly between the broach, and then form the drive of electrostatic force and make the broach electrode vertical movement, because this embodiment sets up the quiet broach electrode of the symmetrical formula of relative insulation, consequently when using, when needing to let the grating mirror surface rotate toward that side, just the mirror broach electrode at the homonymy exert pressure voltage can, let the rotation range of grating mirror surface bigger.
S5, etching a plurality of groups of mutually parallel grating lines on the upper surface of the grating mirror surface
The direction of etched grating lines and the orientation of the torsion beam are kept the same, incident light is dispersed along the rotation direction of the torsion beam under the grating diffraction effect, meanwhile, the scanning grating micro-mirror also rotates around the torsion beam under the electrostatic force effect, and the grating lines combine the grating and the rotation micro-mirror of the traditional micro spectrometer, so that the light path is simplified on the premise of not influencing the light beam distribution, and the energy loss is reduced.
And S6, depositing an aluminum metal layer on the upper surface of the grating mirror surface in a magnetron sputtering mode by using the photoresist as a mask, and removing the photoresist.
Wherein, deposit the aluminium metal coating on the surface of static broach electrode and moving broach electrode through the magnetron sputtering mode equally, and the thickness of the aluminium metal coating of the surface deposition of grating mirror surface, static broach electrode and moving broach electrode is 300nm, and the effect of aluminium metal coating on the grating mirror surface is for reinforcing surface smoothness, promotes surperficial reflectivity, uses as electrically conductive electrode in the effect of static broach electrode and moving broach electrode.
Furthermore, in the above steps, the etching method adopted when the first silicon wafer and the second silicon wafer are etched is a deep silicon etching technology, the MEMS micromirror is processed by using a semiconductor manufacturing technology, the torsion angle of the micromirror can be improved, and the collection of the optical signal with a larger field angle can be realized.
Referring to fig. 2 to 6, the present invention further provides an electrostatic comb-driven MEMS micro-mirror, which is prepared by the above-mentioned preparation method, and includes a first silicon wafer layer 100, a second silicon wafer layer 200, an oxide layer 300, and a metal layer 400, wherein:
first silicon wafer layer 100 includes first frame 110, insulating layer 130 and quiet broach electrode 140 of body coupling, first frame 110 symmetry is provided with two sets ofly, and is connected through insulating layer 130, and the inboard of first frame 110 is provided with quiet broach electrode 140, the middle part of first silicon wafer layer 100, be activity recess 120 between the quiet broach electrode 140 of both sides promptly, the size of activity recess 120 is greater than grating mirror surface 220's size, guarantees that grating mirror surface 220 can rotate in activity recess 120, obtain after insulating layer 130 oxidizes first silicon wafer layer 100 part into silica, and the width is 600nm, can let the quiet broach electrode 140 of both sides relatively insulating effectively.
Further, the first silicon wafer layer 100 has a thickness of 200 μm.
The second silicon wafer layer 200 comprises a second frame 210, a grating mirror surface 220, a torsion beam 230 and a movable comb-tooth electrode 240 which are integrally connected, the grating mirror surface 220 is arranged in the middle of the second frame 210, two sides of the grating mirror surface 220 are connected with the inner side of the second frame 210 through the torsion beam 230, the movable comb-tooth electrode 240 perpendicular to the torsion beam 230 is arranged on two sides of the grating mirror surface 220, the width of a gap between adjacent static comb-tooth electrodes 140 is larger than the width of the movable comb-tooth electrode 240, and a plurality of groups of grating grooves 250 which are parallel to each other are arranged on the upper surface of the grating mirror surface 22.
Further, the thickness of the second silicon wafer 200 is 75 μm, and the direction of the grating lines 250 and the orientation of the torsion beam 230 remain the same.
The oxide layer 300 is formed by thermal oxidation of the upper surface of the first silicon wafer 100 or the lower surface of the second silicon wafer 200 or both, the first silicon wafer layer 100 and the second silicon wafer layer 200 are bonded to the oxide layer 300 through a bonding process, the movable comb-tooth electrode 240 is located right above a gap between adjacent static comb-tooth electrodes 140, the width of the gap between adjacent static comb-tooth electrodes 140 is greater than the width of the movable comb-tooth electrode 240, and the depth of the gap between adjacent static comb-tooth electrodes 140 is greater than the length of the movable comb-tooth electrode 240.
The grating mirror 220 can rotate around the torsion beam 230, when the static comb-teeth electrode 140 is grounded and the moving comb-teeth electrode 240 applies a voltage, a capacitance effect is vertically formed between the comb-teeth, and thus an electrostatic force is formed to drive the moving comb-teeth electrode 240 to vertically move.
The metal layer 400 is an aluminum metal layer deposited on the upper surface of the grating mirror 220.
Further, aluminum metal layers are also deposited on the surfaces of the static comb-tooth electrodes 140 and the moving comb-tooth electrodes 240, and the thicknesses of the aluminum metal layers deposited on the surfaces of the grating mirror surfaces 220, the static comb-tooth electrodes 140 and the moving comb-tooth electrodes 240 are all 300nm.
The invention also provides a spectrometer, wherein the spectrometer comprises an optical fiber, a collimating mirror, a grating micro mirror, a focusing mirror and a photoelectric detector, light rays emitted by the optical fiber are reflected to the grating micro mirror through the collimating mirror, are reflected to the focusing mirror after being split by the grating micro mirror, are reflected to the photoelectric detector after being focused by the focusing mirror, and the grating micro mirror adopts the MEMS micro mirror driven by the electrostatic comb.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A preparation method of an electrostatic comb driven MEMS micro-mirror is characterized by comprising the following specific steps:
s1, etching a deep square movable groove on a first silicon wafer to serve as a rotation space of a mirror surface, and etching comb tooth structures on the front side wall and the rear side wall of the movable groove to serve as static comb tooth electrodes;
s2, symmetrically thermally oxidizing the side walls of the movable groove to form insulating layers with certain widths along the symmetrical axis direction of the static comb tooth electrodes on the two sides of the movable groove, and enabling the static comb tooth electrodes on the two sides to be relatively insulated;
s3, performing thermal oxidation on the upper surface of the first silicon wafer or the lower surface of the second silicon wafer to form a thermal oxide layer, fully cleaning the surface, and bonding the oxide layers of the two silicon wafers together by using a bonding process, wherein the second silicon wafer is positioned above the first silicon wafer;
s4, etching a grating mirror surface positioned in the middle on a second silicon wafer, etching torsion beams at two ends of the grating mirror surface, etching movable comb tooth electrodes in a comb tooth structure shape at two ends of the grating mirror surface vertical to the torsion beams, wherein the movable comb tooth electrodes are positioned right above gaps between adjacent static comb tooth electrodes, and the width of the gaps between the adjacent static comb tooth electrodes is larger than that of the movable comb tooth electrodes;
s5, etching a plurality of groups of mutually parallel grating lines on the upper surface of the grating mirror surface;
and S6, depositing an aluminum metal layer on the upper surface of the grating mirror surface in a magnetron sputtering mode by using the photoresist as a mask, and removing the photoresist.
2. The method of claim 1, wherein the method further comprises: the etching method adopted when the first silicon wafer and the second silicon wafer are subjected to etching treatment is a deep silicon etching technology.
3. The method of claim 1, wherein the method further comprises: the thickness of the first silicon wafer is 200 μm, and after the oxide layers of the two silicon wafers are bonded together in step S3, the second silicon wafer is thinned to 75 μm.
4. The method of claim 1, wherein the method further comprises: the grating ruling direction and the torsion beam orientation etched in step S5 remain the same.
5. The method of claim 1, wherein the method further comprises: in the step S6, aluminum metal layers are deposited on the surfaces of the static comb-tooth electrode and the moving comb-tooth electrode in a magnetron sputtering mode, and the thickness of the aluminum metal layers deposited on the surfaces of the grating mirror surface, the static comb-tooth electrode and the moving comb-tooth electrode is 300nm.
6. An electrostatic comb driven MEMS micro-mirror, comprising: the electrostatic comb driven MEMS micro-mirror is manufactured by the manufacturing method of any one of claims 1 to 5, comprising:
the first silicon wafer layer comprises first frames, static comb tooth electrodes and insulating layers which are integrally connected, the first frames are symmetrically provided with two groups and are connected through the insulating layers, and the static comb tooth electrodes are arranged on the inner side of the first frames;
the second silicon wafer layer comprises a second frame, a movable comb tooth electrode, a grating mirror surface and a torsion beam which are integrally connected, the middle part of the second frame is provided with the grating mirror surface, two sides of the grating mirror surface are connected with the inner side of the second frame through the torsion beam, two sides of the grating mirror surface are provided with the movable comb tooth electrode perpendicular to the torsion beam, the width of a gap between adjacent static comb tooth electrodes is larger than that of the movable comb tooth electrode, and the grating mirror surface is provided with a plurality of groups of grating groove lines which are parallel to each other;
the oxidation layer is formed by thermally oxidizing the upper surface of a first silicon wafer or the lower surface of a second silicon wafer, the first silicon wafer layer and the second silicon wafer layer are bonded with the oxidation layer through a bonding process, and the movable comb-tooth electrode is positioned right above a gap between the adjacent static comb-tooth electrodes;
and the metal layer is an aluminum metal layer and is deposited on the upper surface of the grating mirror surface.
7. An electrostatic comb driven MEMS micro-mirror, comprising: the thickness of the first silicon wafer layer is 200 mu m, and the thickness of the second silicon wafer layer is 75 mu m.
8. An electrostatic comb driven MEMS micro-mirror, comprising: the grating ruling direction and the torsion beam orientation remain the same.
9. An electrostatic comb driven MEMS micro-mirror, comprising: aluminum metal layers are deposited on the surfaces of the static comb tooth electrode and the movable comb tooth electrode, and the thickness of the aluminum metal layers deposited on the surfaces of the grating mirror surface, the static comb tooth electrode and the movable comb tooth electrode is 300nm.
10. A spectrometer, comprising: the spectrometer comprises an optical fiber, a collimating mirror, a grating micro lens, a focusing mirror and a photoelectric detector, wherein light rays emitted by the optical fiber are reflected to the grating micro lens through the collimating mirror, are reflected to the focusing mirror after being split by the grating micro lens, and are reflected to the photoelectric detector after being focused by the focusing mirror, and the grating micro lens adopts the MEMS micro lens driven by the electrostatic comb as claimed in any one of claims 6 to 9.
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