CN115473121A - Tunable semiconductor laser light source emitting device - Google Patents
Tunable semiconductor laser light source emitting device Download PDFInfo
- Publication number
- CN115473121A CN115473121A CN202211132440.3A CN202211132440A CN115473121A CN 115473121 A CN115473121 A CN 115473121A CN 202211132440 A CN202211132440 A CN 202211132440A CN 115473121 A CN115473121 A CN 115473121A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- light source
- laser light
- tunable semiconductor
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
Abstract
The invention discloses a tunable semiconductor laser light source emitting device. The laser comprises a semiconductor laser (1), a collimating mirror (2), a comb filter (3), a polarization beam splitter prism (4), a half-wave plate (5), a focusing mirror (6), a high reflecting mirror (7) and piezoelectric ceramics (8). 1550nm semiconductor laser (1) are collimated through collimating mirror (2), incide to comb filter (3) and go up the filtering, then pass through polarization beam splitter prism (4), behind rethread half wave plate (5), focus on high speculum (7) through focusing mirror (6), the reverberation becomes collimated light through focusing mirror (6) again, collimated light passes through half wave plate (5), rethread polarization beam splitter prism (4), realize tunable semiconductor laser light source transmission.
Description
Technical Field
The invention relates to a tunable semiconductor laser light source emitting device, and belongs to the technical field of semiconductor lasers.
Background
The tunable semiconductor laser light source has the advantages of narrow line width, wide tuning, single-mode output and the like, and can be widely applied to the fields of white light interferometry, wavelength division multiplexing systems, optical coherence tomography, coherent light communication, gas detection, atomic clock light sources and the like. The tunable semiconductor laser light source is generally tunable through a grating, but because optical feedback and wavelength selection of grating tunable semiconductor laser are provided by one grating element, the tunable semiconductor laser light source is very sensitive to optical offset caused by mechanical deformation and thermal strain, and the direction and the spot position of the laser beam output by the tunable semiconductor laser light source depend on the wavelength, so that the output performance of the tunable semiconductor laser light source is unstable. In order to further improve the output stability of the tunable semiconductor laser light source, a tunable semiconductor laser light source emitting device is provided.
Disclosure of Invention
In order to improve the output stability of the tunable semiconductor laser light source, the invention discloses a tunable semiconductor laser light source emitting device.
The invention discloses a tunable semiconductor laser light source emitting device which comprises semiconductor laser (1), a collimating mirror (2), a comb filter (3), a polarization splitting prism (4), a half-wave plate (5), a focusing mirror (6), a high reflecting mirror (7) and piezoelectric ceramics (8).
The method is characterized in that:
laser emitted by semiconductor laser (1) is collimated through a collimating mirror (2), mode selection is carried out through a comb filter (3), light is split through a polarization beam splitter prism (4), P light is focused on a high reflector (7) through a half-wave plate (5) and a focusing mirror (6) after being transmitted, position change of the high reflector (7) is adjusted through piezoelectric ceramics (8), cavity length is changed for tuning, reflected light beams pass through the half-wave plate (5) and are split through the polarization beam splitter prism (4), multi-beam interference is carried out on the transmitted P light in an original light path, the reflected S light is reflected and output, and finally tunable semiconductor laser source emission is achieved.
The semiconductor laser (1) has the maximum emission power density within a wave band range of at least 30nm with a central wavelength as a center at normal temperature, the output power is more than 10mW, the reflection end face is plated with a high-reflection film with the reflectivity higher than 99%, and the output end face is plated with an antireflection film with the transmissivity higher than 99.7%.
The front and back surfaces of the collimating mirror (2) are plated with antireflection films with the transmissivity higher than 99% in the range of 80nm wave band with the central wavelength of the semiconductor laser (1) as the center.
The comb filter (3) has at least 7 reflection channels and 7 transmission channels aiming at a 30nm wave band range taking the central wavelength of the semiconductor laser (1) as the center, the interval between adjacent channels is less than 5nm, the isolation degree of the adjacent channels is less than 30dB, and the peak insertion loss is less than 0.6dB.
The extinction ratio of the polarization beam splitter prism (4) is more than 100, the P light transmittance is more than 95%, the S light transmittance is less than 1%, the S light reflectance is more than 99%, and the P light reflectance is less than 5%.
The half-wave plate (5) is an electrically controlled half-wave plate and is formed by changing LiNbO 3 The amplitude of the voltage applied to the crystal makes the plate suitable for any wavelength of light.
Front and back surfaces of the focusing lens (6) are plated with anti-reflection films with transmissivity higher than 99% in a wave band range of 80nm and with the center wavelength of the semiconductor laser (1) as the center, and the cat eye focusing lens is 10mm-20mm in focal length.
The front surface of the high reflecting mirror (7) is plated with a high reflecting film with the reflectivity higher than 99.9 percent in the range of 80nm wave band with the center wavelength of the semiconductor laser (1) as the center.
The length of the piezoelectric ceramic (8) is 5mm-15 mm.
Drawings
Fig. 1 is a schematic structural diagram of a tunable semiconductor laser light source emitting device according to the present invention.
Detailed Description
The present invention is described in further detail below with reference to fig. 1.
The invention discloses a tunable semiconductor laser light source emitting device which comprises semiconductor laser (1), a collimating mirror (2), a comb filter (3), a polarization splitting prism (4), a half-wave plate (5), a focusing mirror (6), a high reflecting mirror (7) and piezoelectric ceramics (8).
A tunable semiconductor laser having a center wavelength of 1545nm will be specifically described as an example. The emitting power density of the tunable semiconductor laser (1) with the center wavelength of 1545nm is the maximum within the range of 1525nm-1565nm, the maximum power output is 100mW, the reflecting end face is plated with a high-reflection film with the reflectivity of 99.5 percent, and the output end face is plated with an anti-reflection film with the transmissivity of 99.8 percent. The light beam passes through the collimating mirror (2), and antireflection films with the transmittance of 99.5 percent in the wave band range of 1505nm-1585nm are plated on the front surface and the rear surface of the collimating mirror (2). After light beams are collimated, the mode selection is carried out through the comb filter (3), the comb filter (3) has 10 reflection channels and 10 transmission channels in the 1525nm-1565nm wave band range, the interval between adjacent channels is 4nm, the isolation degree of the adjacent channels is 29dB, and the peak insertion loss is 0.5dB. After light beam mode selection, light is split through a polarization beam splitter prism (4), P light is focused on a high reflector (7) through a half-wave plate (5) and a focusing mirror (6) after being transmitted, the position of the high reflector (7) is adjusted through piezoelectric ceramics (8), cavity length is changed for tuning, reflected light beams pass through the half-wave plate (5) and then are split through the polarization beam splitter prism (4), the transmitted P light is subjected to multi-beam interference in an original light path, reflected S light is reflected and output, and finally tunable semiconductor laser light source emission with the center wavelength of 1545nm is achieved.
Claims (9)
1. The tunable semiconductor laser light source emitting device is characterized by comprising semiconductor laser (1), a collimating mirror (2), a comb filter (3), a polarization splitting prism (4), a half-wave plate (5), a focusing mirror (6), a high reflecting mirror (7) and piezoelectric ceramics (8).
2. The tunable semiconductor laser light source emitting device according to claim 1, wherein the semiconductor laser (1) has a maximum emission power density within a wavelength range of at least 30nm centered on a central wavelength at normal temperature, an output power of greater than 10mW, a high reflection film with a reflectivity of greater than 99% on the reflecting end surface, and an anti-reflection film with a transmissivity of greater than 99.7% on the output end surface.
3. The tunable semiconductor laser light source emitting device according to claim 1, wherein: laser emitted by semiconductor laser (1) is collimated through a collimating mirror (2), mode selection is carried out through a comb filter (3), light is split through a polarization beam splitter prism (4), P light is focused on a high reflector (7) through a half-wave plate (5) and a focusing mirror (6) after being transmitted, position change of the high reflector (7) is adjusted through piezoelectric ceramics (8), cavity length is changed for tuning, reflected light beams pass through the half-wave plate (5) and are split through the polarization beam splitter prism (4), multi-beam interference is carried out on the transmitted P light in an original light path, the reflected S light is reflected and output, and finally tunable semiconductor laser source emission is achieved.
4. The tunable semiconductor laser light source emitting device according to claim 1, wherein the front and back surfaces of the collimating mirror (2) are coated with antireflection films having a transmittance higher than 99% in a range of 80nm wavelength centered on the center wavelength of the semiconductor laser (1).
5. The tunable semiconductor laser light source emitting device according to claim 1, wherein the comb filter (3) has at least 7 reflection channels and 7 transmission channels for a 30nm band centered on the center wavelength of the semiconductor laser light (1), the interval between adjacent channels is less than 5nm, the isolation between adjacent channels is less than 30dB, and the peak insertion loss is less than 0.6dB.
6. The tunable semiconductor laser light source transmitting device according to claim 1, wherein the extinction ratio of the polarization splitting prism (4) is greater than 100, the light transmittance of P is greater than 95%, the light transmittance of S is less than 1%, the light reflectance of S is greater than 99%, and the light reflectance of P is less than 5%.
7. The tunable semiconductor laser light source emitting device according to claim 1, wherein the half-wave plate (5) is an electrically controlled half-wave plate by changing LiNbO 3 The amplitude of the voltage applied to the crystal makes the plate suitable for any wavelength of light.
8. The tunable semiconductor laser light source emission device according to claim 1, wherein the front and back surfaces of the focusing mirror (6) are coated with antireflection films having a transmittance higher than 99% in a wavelength band of 80nm centered on the central wavelength of the semiconductor laser (1), and the focusing mirror is a cat-eye focusing mirror having a focal length of 10mm to 20 mm.
9. The tunable semiconductor laser light source emitting device according to claim 1, wherein the front surface of the high reflecting mirror (7) is coated with a high reflecting film having a reflectivity higher than 99.9% in a range of 80nm around the central wavelength of the semiconductor laser (1); the length of the piezoelectric ceramic (8) is 5mm-15 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211132440.3A CN115473121A (en) | 2022-09-17 | 2022-09-17 | Tunable semiconductor laser light source emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211132440.3A CN115473121A (en) | 2022-09-17 | 2022-09-17 | Tunable semiconductor laser light source emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115473121A true CN115473121A (en) | 2022-12-13 |
Family
ID=84333976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211132440.3A Pending CN115473121A (en) | 2022-09-17 | 2022-09-17 | Tunable semiconductor laser light source emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115473121A (en) |
-
2022
- 2022-09-17 CN CN202211132440.3A patent/CN115473121A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20040246583A1 (en) | Retro-reflecting device in particular for tunable lasers | |
| EP0523084B1 (en) | A method of forming a refractive index grating in an optical waveguide | |
| US6519269B1 (en) | Wavelength tuneable laser source | |
| US5163058A (en) | Semiconductor laser pump source | |
| JPH11251690A (en) | Method for generating laser beam and tuning laser device | |
| JP2012033956A (en) | Optical component of partial reflection type and laser source with built-in the same component | |
| CN210379758U (en) | Acousto-optic Q-switched ultraviolet laser | |
| JP2004072069A (en) | Resonant cavity system of tunable multiple-wavelength semiconductor laser | |
| CN218040200U (en) | Tunable semiconductor laser light source emitting device | |
| JP2015056469A (en) | Diode laser module wavelength controlled by external resonator | |
| CN111900606A (en) | High-power high-energy yellow Raman laser system | |
| CN115473121A (en) | Tunable semiconductor laser light source emitting device | |
| WO2015085544A1 (en) | Laser | |
| US6600767B1 (en) | Free space laser with self-aligned fiber output | |
| CN112260048B (en) | Device and method for periodically changing laser wavelength | |
| CN109950785B (en) | Wavelength tunable external cavity laser | |
| JP3710077B2 (en) | External cavity semiconductor laser | |
| KR102328628B1 (en) | Wavelength stabilized laser module and its manufacturing method, Fiber laser using wavelength stabilized laser module | |
| CN117117615B (en) | Optical fiber ultrafast laser | |
| CN213602177U (en) | Linear cavity mode-locked fiber laser based on phase offset | |
| JPH1168233A (en) | Variable wavelength laser light source | |
| CN210040865U (en) | All-solid-state v-cavity single-frequency laser | |
| CN210668980U (en) | Wavelength-tunable titanium sapphire continuous laser | |
| JP2965013B2 (en) | Light emitting module structure | |
| JPS62149185A (en) | Semiconductor laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication |