CN218040200U - Tunable semiconductor laser light source emitting device - Google Patents
Tunable semiconductor laser light source emitting device Download PDFInfo
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- CN218040200U CN218040200U CN202222460567.XU CN202222460567U CN218040200U CN 218040200 U CN218040200 U CN 218040200U CN 202222460567 U CN202222460567 U CN 202222460567U CN 218040200 U CN218040200 U CN 218040200U
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Abstract
The invention discloses a tunable semiconductor laser light source emitting device. The laser comprises a semiconductor laser (1), a collimating mirror (2), a comb filter (3), a polarization beam splitter prism (4), a half-wave plate (5), a focusing mirror (6), a high reflecting mirror (7) and piezoelectric ceramics (8). 1550nm semiconductor laser (1) are collimated through collimating mirror (2), incide to comb filter (3) and go up the filtering, then pass through polarization beam splitter prism (4), behind rethread half wave plate (5), focus on high speculum (7) through focusing mirror (6), the reverberation becomes collimated light through focusing mirror (6) again, collimated light passes through half wave plate (5), rethread polarization beam splitter prism (4), realize tunable semiconductor laser light source transmission.
Description
Technical Field
The invention relates to a tunable semiconductor laser light source emitting device, and belongs to the technical field of semiconductor lasers.
Background
The tunable semiconductor laser source has the advantages of narrow line width, wide tuning, single-mode output and the like, and can be widely applied to the fields of white light interferometry, wavelength division multiplexing systems, optical coherence tomography, coherent optical communication, gas detection, atomic clock light sources and the like. The tunable semiconductor laser light source is generally tunable through a grating, but because optical feedback and wavelength selection of grating tunable semiconductor laser are provided by one grating element, the tunable semiconductor laser light source is very sensitive to optical offset caused by mechanical deformation and thermal strain, and the direction and the spot position of the laser beam output by the tunable semiconductor laser light source depend on the wavelength, so that the output performance of the tunable semiconductor laser light source is unstable. In order to further improve the output stability of the tunable semiconductor laser light source, a tunable semiconductor laser light source emitting device is provided.
Disclosure of Invention
In order to improve the output stability of the tunable semiconductor laser light source, the invention discloses a tunable semiconductor laser light source emitting device.
The invention relates to a tunable semiconductor laser light source emitting device which comprises a semiconductor laser (1), a collimating mirror (2), a comb filter (3), a polarization beam splitter prism (4), a half-wave plate (5), a focusing mirror (6), a high reflecting mirror (7) and piezoelectric ceramics (8).
The method is characterized in that:
laser emitted by semiconductor laser (1) is collimated through a collimating mirror (2), mode selection is carried out through a comb filter (3), light is split through a polarization beam splitter prism (4), P light is focused on a high reflector (7) through a half-wave plate (5) and a focusing mirror (6) after being transmitted, position change of the high reflector (7) is adjusted through piezoelectric ceramics (8), cavity length is changed for tuning, reflected light beams pass through the half-wave plate (5) and are split through the polarization beam splitter prism (4), multi-beam interference is carried out on the transmitted P light in an original light path, the reflected S light is reflected and output, and finally tunable semiconductor laser source emission is achieved.
The semiconductor laser (1) has the maximum emission power density within a wave band range of at least 30nm with a central wavelength as a center at normal temperature, the output power is more than 10mW, the reflection end face is plated with a high-reflection film with the reflectivity higher than 99%, and the output end face is plated with an antireflection film with the transmissivity higher than 99.7%.
The front and back surfaces of the collimating mirror (2) are plated with antireflection films with the transmissivity higher than 99% in the range of 80nm wave band with the central wavelength of the semiconductor laser (1) as the center.
The comb filter (3) has at least 7 reflection channels and 7 transmission channels aiming at a 30nm wave band range taking the central wavelength of the semiconductor laser (1) as the center, the interval between adjacent channels is less than 5nm, the isolation degree of the adjacent channels is less than 30dB, and the peak insertion loss is less than 0.6dB.
The extinction ratio of the polarization beam splitter prism (4) is more than 100, the P light transmittance is more than 95%, the S light transmittance is less than 1%, the S light reflectance is more than 99%, and the P light reflectance is less than 5%.
The half-wave plate (5) is an electrically controlled half-wave plate and is formed by changing LiNbO 3 The amplitude of the voltage applied to the crystal makes the wave plate suitable for any wavelength of light.
The front and back surfaces of the focusing lens (6) are plated with antireflection films with the transmissivity higher than 99% in the range of 80nm wave band by taking the central wavelength of the semiconductor laser (1) as the center, and the cat eye focusing lens has the focal length of 10mm-20 mm.
The front surface of the high reflecting mirror (7) is plated with a high reflecting film with the reflectivity higher than 99.9 percent in the range of 80nm wave band with the center wavelength of the semiconductor laser (1) as the center.
The length of the piezoelectric ceramic (8) is 5mm-15 mm.
Drawings
Fig. 1 is a schematic structural diagram of a tunable semiconductor laser light source emitting device according to the present invention.
Detailed Description
The present invention is described in further detail below with reference to fig. 1.
The invention discloses a tunable semiconductor laser light source emitting device which comprises semiconductor laser (1), a collimating mirror (2), a comb filter (3), a polarization splitting prism (4), a half-wave plate (5), a focusing mirror (6), a high reflecting mirror (7) and piezoelectric ceramics (8).
A tunable semiconductor laser having a center wavelength of 1545nm will be specifically described as an example. The emitting power density of the tunable semiconductor laser (1) with the center wavelength of 1545nm is the maximum within the range of 1525nm-1565nm, the maximum power is output at 100mW, the reflecting end face is plated with a high-reflection film with the reflectivity of 99.5%, and the output end face is plated with an antireflection film with the transmissivity of 99.8%. The light beam passes through the collimating mirror (2), and antireflection films with the transmittance of 99.5 percent in the wave band range of 1505nm-1585nm are plated on the front surface and the rear surface of the collimating mirror (2). After light beams are collimated, the mode selection is carried out through the comb filter (3), the comb filter (3) has 10 reflection channels and 10 transmission channels in the 1525nm-1565nm wave band range, the interval between adjacent channels is 4nm, the isolation degree of the adjacent channels is 29dB, and the peak insertion loss is 0.5dB. After light beam mode selection, light is split through a polarization beam splitter prism (4), P light is focused on a high reflector (7) through a half-wave plate (5) and a focusing mirror (6) after being transmitted, the position of the high reflector (7) is adjusted through piezoelectric ceramics (8), cavity length is changed for tuning, reflected light beams pass through the half-wave plate (5) and then are split through the polarization beam splitter prism (4), the transmitted P light is subjected to multi-beam interference in an original light path, reflected S light is reflected and output, and finally tunable semiconductor laser light source emission with the center wavelength of 1545nm is achieved.
Claims (9)
1. The tunable semiconductor laser light source emitting device is characterized by comprising semiconductor laser (1), a collimating mirror (2), a comb filter (3), a polarization splitting prism (4), a half-wave plate (5), a focusing mirror (6), a high reflecting mirror (7) and piezoelectric ceramics (8).
2. The tunable semiconductor laser light source emitting device according to claim 1, wherein the semiconductor laser (1) has a maximum emission power density within a wavelength range of at least 30nm centered on a central wavelength at normal temperature, an output power of greater than 10mW, a high reflection film with a reflectivity of greater than 99% on the reflecting end surface, and an anti-reflection film with a transmissivity of greater than 99.7% on the output end surface.
3. The tunable semiconductor laser light source emitting device according to claim 1, wherein: laser emitted by semiconductor laser (1) is collimated through a collimating mirror (2), mode selection is carried out through a comb filter (3), light is split through a polarization beam splitter prism (4), P light is focused on a high reflector (7) through a half-wave plate (5) and a focusing mirror (6) after being transmitted, position change of the high reflector (7) is adjusted through piezoelectric ceramics (8), cavity length is changed for tuning, reflected light beams pass through the half-wave plate (5) and are split through the polarization beam splitter prism (4), multi-beam interference is carried out on the transmitted P light in an original light path, the reflected S light is reflected and output, and finally tunable semiconductor laser light source emission is achieved.
4. The tunable semiconductor laser light source emitting device according to claim 1, wherein the front and back surfaces of the collimating mirror (2) are coated with antireflection films having a transmittance higher than 99% in a range of 80nm wavelength centered on the center wavelength of the semiconductor laser (1).
5. The tunable semiconductor laser light source emitting device according to claim 1, wherein the comb filter (3) has at least 7 reflection channels and 7 transmission channels for a 30nm band centered on the center wavelength of the semiconductor laser light (1), the interval between adjacent channels is less than 5nm, the isolation between adjacent channels is less than 30dB, and the peak insertion loss is less than 0.6dB.
6. The tunable semiconductor laser light source transmitting device according to claim 1, wherein the extinction ratio of the polarization splitting prism (4) is greater than 100, the transmittance of P light is greater than 95%, the transmittance of S light is less than 1%, the reflectance of S light is greater than 99%, and the reflectance of P light is less than 5%.
7. The tunable semiconductor laser light source emitting device according to claim 1, wherein the half-wave plate (5) is an electrically controlled half-wave plate by changing LiNbO 3 The amplitude of the voltage applied to the crystal makes the wave plate suitable for any wavelength of light.
8. The tunable semiconductor laser light source emission device according to claim 1, wherein the front and back surfaces of the focusing mirror (6) are coated with antireflection films having a transmittance higher than 99% in a wavelength range of 80nm centered on the center wavelength of the semiconductor laser (1), and the focusing mirror is a cat-eye focusing mirror having a focal length of 10mm to 20 mm.
9. The tunable semiconductor laser light source emitting device according to claim 1, wherein the front surface of the high reflecting mirror (7) is coated with a high reflecting film having a reflectivity higher than 99.9% in a range of 80nm around the center wavelength of the semiconductor laser (1); the length of the piezoelectric ceramic (8) is 5mm-15 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222460567.XU CN218040200U (en) | 2022-09-17 | 2022-09-17 | Tunable semiconductor laser light source emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222460567.XU CN218040200U (en) | 2022-09-17 | 2022-09-17 | Tunable semiconductor laser light source emitting device |
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| Publication Number | Publication Date |
|---|---|
| CN218040200U true CN218040200U (en) | 2022-12-13 |
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| CN202222460567.XU Active CN218040200U (en) | 2022-09-17 | 2022-09-17 | Tunable semiconductor laser light source emitting device |
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- 2022-09-17 CN CN202222460567.XU patent/CN218040200U/en active Active
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