CN115472703A - Nested X-ray three-dimensional groove electrode silicon detector - Google Patents

Nested X-ray three-dimensional groove electrode silicon detector Download PDF

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Publication number
CN115472703A
CN115472703A CN202210981812.3A CN202210981812A CN115472703A CN 115472703 A CN115472703 A CN 115472703A CN 202210981812 A CN202210981812 A CN 202210981812A CN 115472703 A CN115472703 A CN 115472703A
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electrode
silicon
nested
ray
detector
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刘美萍
唐勇
宋俊
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Huanghuai University
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Huanghuai University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a nested X-ray three-dimensional groove electrode silicon detector, and belongs to the technical field of photoelectric detectors. The nested X-ray three-dimensional groove electrode silicon detector comprises a lower silicon dioxide protective layer, a silicon substrate, a peripheral electrode, a central electrode, an electrode contact layer and an isolation silicon body; the silicon substrate comprises a substrate part and a nesting part; the top end of the isolation silicon body is of a structure in which bosses and grooves are arranged alternately in a shape like a Chinese character 'hui', the effect of remarkably increasing the top receiving surface area is achieved, and the square-wave-shaped protruding surface area of the novel nested X-ray three-dimensional groove electrode silicon detector is far larger than two times of that of the original detector after being increased through comparison, so that the novel nested X-ray three-dimensional groove electrode silicon detector is proved to effectively absorb and utilize X rays.

Description

Nested X-ray three-dimensional groove electrode silicon detector
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a nested X-ray three-dimensional groove electrode silicon detector.
Background
The detector is widely applied to the technical fields of high-energy physics, celestial body physics, aerospace, military, medicine and the like, and in the application fields of the high-energy physics and the celestial body physics, the working environment of the detector is in a strong irradiation condition, so that the detector has strict requirements, and the specific requirements are embodied in the aspects of strong irradiation resistance, moderate leakage current and full depletion voltage, proper volume and the like. The X-ray detector fluorescence spectrometer based on the silicon material can be used for soil detection, metal component analysis, prospecting and mineral dressing, food detection, nuclear medicine and other aspects, and the traditional three-dimensional groove electrode silicon detector has many defects: firstly, when the electrode of the traditional three-dimensional groove electrode silicon detector is etched, the electrode can not completely penetrate through the whole silicon body, the part which is not etched has the phenomena of weak electric field, no electric field or uneven charge distribution and the like, the part of area can be called as a dead zone, the dead zone occupies 10 to 30 percent of a single detector, and if the dead zone is spliced into an array, the occupied proportion is larger, thus the performance of the detector is seriously influenced; secondly, the traditional three-dimensional groove electrode silicon detector is etched on a single surface, particles can only be injected from the single surface and absorbed, and after the particles enter the device, generated electron hole pairs cannot be rapidly collected by an electrode, so that the response time of the device is increased, and the sensitivity is greatly limited; thirdly, the change of the electrode spacing of the traditional three-dimensional groove electrode silicon detector can influence the radiation resistance of the traditional three-dimensional groove electrode silicon detector, the influence of the size of a single groove unit on the radiation resistance is large, when the traditional three-dimensional groove electrode silicon detector is made into an array, the unit structure of the detector cannot be changed at will, and the adjustment is inconvenient so that the application and the practicability of the detector are greatly limited.
Disclosure of Invention
The three-dimensional groove electrode silicon detector solves the problems that a traditional three-dimensional groove electrode silicon detector has large dead zone and sensitivity limitation, the unit structure of the detector cannot be changed at will, and the like. The invention provides a nested X-ray three-dimensional groove electrode silicon detector, which is characterized in that bosses and grooves are arranged at the upper end of an isolation silicon body in a zigzag shape at intervals, and the height and the width of the isolation silicon body are both 10 micrometers, so that the purpose that the absorption surface area of the detector on X-rays is greatly increased is achieved, and the effective utilization of the detector on the X-rays is realized.
The purpose of the invention is realized by the following technical scheme:
the utility model provides a nested formula three-dimensional slot electrode silicon detector of X ray, includes silica dioxide protective layer down, and set up in silica matrix and peripheral electrode on the silica dioxide protective layer down, the silica matrix includes base member and nested part, the base member's cross section with the same of silica dioxide protective layer down, nested part embedded in the peripheral electrode, the peripheral electrode is inboard be equipped with central electrode on the silica dioxide protective layer down, central electrode with between the peripheral electrode and nested part with all be filled with the isolation silicon body between the peripheral electrode, the peripheral electrode with the top of central electrode all is equipped with the electrode contact layer, be equipped with electrode contact port on the electrode contact layer, isolation silicon body top is equipped with the silica dioxide protective layer, isolation silicon body top is alternately shown back word type by boss and recess and is arranged.
In a preferred embodiment, the width of the isolation silicon body is 50 μm, the height and the width of the boss are both 10 μm, and the depth and the width of the groove are both 10 μm.
The nested X-ray three-dimensional groove electrode silicon detector is 300-500 mu m in height.
Wherein: the peripheral electrode is a hollow straight quadrangular prism-shaped peripheral electrode; in a preferred embodiment, the peripheral electrode is n + Heavily doped phosphorus silicon or p + Heavily doped borosilicate, the width of the peripheral electrode is 10 μm, and the doping concentration is 10 19 cm -3 。
The central electrode is a cylinder with a radius equal to 5 μm and a height of 300 μm, and in a preferred embodiment, the central electrode is p + Heavily doped borosilicate or n + Heavily doped phosphorus silicon with a doping concentration of 10 19 cm -3 。
The height of the nesting part is 30-50 μm; as a preferred embodiment, the cross-section of the nesting portion is circular.
The thickness of the electrode contact layer is 1 μm; in a preferred embodiment, the electrode contact layer is an aluminum layer.
The thickness of the upper silicon dioxide protective layer is 1 μm, and as a preferred embodiment, the upper silicon dioxide protective layer is a silicon dioxide protective layer with a quadrangular cross section.
The base body part is a p-type silicon base bodyThe body is preferably p-type lightly doped borosilicate with a doping concentration of 10 12 cm -3 (ii) a The purpose of the base part is to stabilize the mechanical structure of the device, not contributing to the performance of the detector, with a height of 10 μm;
compared with the prior art, the invention has the following advantages and effects:
the top of the nested three-dimensional slot electrode silicon detector of formula X ray of this patent is by the alternate word form arrangement structure that returns of boss and recess, has the effect that is showing and increases the top and receive the surface area, and the contrast can know that novel three-dimensional slot electrode silicon detector of nested formula X ray square wave form is far greater than twice of former detector behind the increase to prove novel three-dimensional slot electrode silicon detector of nested formula X ray to the effective absorption and the utilization of X ray.
Drawings
FIG. 1 is a diagram of an array of nested X-ray three-dimensional trench electrode silicon detectors according to an embodiment of the present invention;
FIG. 2 is a vertical sectional view of a nested X-ray three-dimensional trench electrode silicon detector in accordance with an embodiment of the present invention;
FIG. 3 is a front view of a nested X-ray three-dimensional trench electrode silicon detector in accordance with an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a nested X-ray three-dimensional trench electrode silicon detector according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view of a top structure of a nested X-ray three-dimensional trench electrode silicon detector in accordance with one embodiment of the present invention;
FIG. 6 is a diagram of another array of nested X-ray three-dimensional trench electrode silicon detectors in accordance with an embodiment of the present invention; wherein (1), (2), (3), (4), (5) and (6) are the corresponding positions of the side labels in FIG. 4.
Wherein: 1. a peripheral electrode; 2. a center electrode; 3. a nesting portion; 4. an electrode contact layer; 5. a lower silicon dioxide protective layer; 6. a base portion; 7. and isolating the silicon body.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. As used herein, the term "comprising" or "includes" can be open, semi-closed, and closed. In other words, the term also includes "consisting essentially of …," or "consisting of ….
Example 1
As shown in fig. 1-4, a nested X-ray three-dimensional trench electrode silicon detector, the detector height is 300-500 μm, and the detector includes a lower silicon dioxide protective layer 5 with a quadrangular cross section, a silicon substrate and a hollow straight quadrangular prism-shaped peripheral electrode 1 are sequentially disposed on the lower silicon dioxide protective layer 5, the silicon substrate includes a substrate portion 6 and a nesting portion 3, the cross section of the substrate portion 6 is the same as that of the lower silicon dioxide protective layer 5, the nesting portion 3 is embedded in the peripheral electrode 1 and has a circular cross section, a central electrode 2 is further disposed on the silicon dioxide protective layer 5 inside the peripheral electrode 3, the cross section of the central electrode 2 is circular, an isolated silicon body 7 is filled between the central electrode 2 and the peripheral electrode 1 and between the nesting portion 3 and the peripheral electrode 1, electrode contact layers (aluminum layers) 4 are disposed on the top of the peripheral electrode 1 and the top of the central electrode 2, electrode contact ports are disposed on the two aluminum layers 4, and an upper silicon dioxide protective layer is disposed on the top of the isolated silicon body 7.
Wherein: the width of the isolation silicon body 7 is 50 micrometers, the top end of the isolation silicon body 7 is arranged in a zigzag shape by alternately arranging bosses and grooves, as a preferred embodiment, the heights and the widths of the bosses are both 10 micrometers, and the depths and the widths of the grooves are both 10 micrometers; the section of the top end of the isolation silicon body 7 is Fang Bozhuang (the section is a through center electrode and is parallel to one side surface), and the height and the width of the wave shape are both 10 mu m.
The peripheral electrode 1 is n + Heavily doped phosphorus silicon or p + Heavily doped borosilicate, the width of the peripheral electrode is 10 μm, and the doping concentration is 10 19 cm -3 ；
The central electrode 2 is p + Heavily doped borosilicate or n + Heavily doped phosphorus-silicon with a doping concentration of 10 19 cm -3 (ii) a The central electrode 2 is cylindrical with a radius equal to 5 μm and a height of 300 μm.
The height of the nesting part 3 is 30-50 μm;
the electrode contact layer 4 is an aluminum layer (Al), and the thickness of the electrode is 1 mu m;
the thickness of the silicon dioxide protective layer 5 is 1 μm;
the substrate part 6 is a p-type silicon substrate, the p-type silicon substrate is preferably p-type lightly doped borosilicate with the doping concentration of 10 12 cm -3 (ii) a The purpose of the base part is to stabilize the mechanical structure of the device, not contributing to the performance of the detector, with a height of 10 μm;
in FIG. 4, the center electrode 2 is a cylindrical shape having a radius of 5 μm or more and a height of 300. Mu.m. The width of the isolation silicon body 7 is 50 μm; the top end of the isolation silicon body 7 is in a square wave shape (sectional view), and the height and the width of the square wave shape are both 10 mu m; the height of the nesting part 3 is 30 micrometers, the height of the p-type silicon substrate 6 is 10 micrometers, the thickness of the silicon dioxide protection layer 5 is 1 micrometer, the thickness of the electrode contact layer 4 is an Al layer, the thickness of the electrode is 1 micrometer, and the overall height of the detector is 310 micrometers; the peripheral electrode 1 is n + Heavily doped phosphorus silicon (p) + Heavily doped borosilicate) electrode width of 10 μm and doping concentration of 10 19 cm -3 (ii) a The central electrode 2 is a cylindrical shape with p + heavy doping borosilicate (n + heavy doping phosphorus silicon) radius equal to 5 μm and doping concentration of 10 19 cm -3 。
The nested three-dimensional slot electrode silicon detector top of formula X ray of this patent is by the alternate style of calligraphy range structure that returns of boss and recess has the effect that shows and increase top receiving surface area, and the concrete description is as follows: as shown in fig. 5 and 6: the square wave-shaped raised surface area increasing part for absorbing X-rays is shown as (1), (2), (3), (4), (5) and (6), wherein the surface area increased by the side surface of (1) is as follows: 110 × 10 × 4=4400 (μm) 2 ) (ii) a (2) The surface area added to the sides is: 90 × 10 × 4=3600 (μm) 2 ) (ii) a (3) The surface area added to the sides is: 70 × 10 × 4=2800 (μm) 2 ) (ii) a (4) The surface area added to the sides is: 50 × 10 × 4=2000 (μm) 2 ) (ii) a (5) The surface area added to the sides is: 30 × 10 × 4=1200 (μm) 2 ) (ii) a (6) Side wallThe surface area added by the face is: 10 × 10 × 4=400 (μm) 2 ) Surface area increase (1) + (2) + (3) + (4) + (5) + (6) =14400 (μm) 2 ) (ii) a Calculating the receiving surface area of the top of the original three-dimensional groove electrode silicon detector for comparison: 110X 110-pi 5 2 ＝12021.5(μm 2 )
Compared with the prior art, the square wave-shaped raised surface area of the novel nested X-ray three-dimensional groove electrode silicon detector is increased by two times and then is far larger than that of the original detector, so that the effective absorption and utilization of the novel nested X-ray three-dimensional groove electrode silicon detector on X-rays are proved.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (9)

1. A nested X-ray three-dimensional groove electrode silicon detector is characterized in that: including lower silica protective layer and set up in silicon substrate and peripheral electrode on the silica protective layer down, the silicon substrate includes base member part and nested part, the cross section of base member part with the same of silica protective layer down, nested part embedded is in the peripheral electrode, the peripheral electrode is inboard be equipped with central electrode down on the silica protective layer, central electrode with between the peripheral electrode and nested part with all pack between the peripheral electrode and have the isolation silicon body, the peripheral electrode with the top of central electrode all is equipped with the electrode contact layer, be equipped with electrode contact port on the electrode contact layer, isolation silicon body top is equipped with the silica protective layer, isolation silicon body top is alternately arranged with the recess back style of calligraphy by the boss.
2. The nested X-ray three-dimensional trench electrode silicon detector of claim 1, wherein: the width of the isolation silicon body is 50 micrometers, the height and the width of the boss are both 10 micrometers, and the depth and the width of the groove are both 10 micrometers.
3. The nested X-ray three-dimensional trench electrode silicon detector of claim 1, wherein: the nested X-ray three-dimensional groove electrode silicon detector has the height of 300-500 mu m.
4. The nested X-ray three-dimensional trench electrode silicon detector of claim 1, wherein: the peripheral electrode is a hollow straight quadrangular prism-shaped peripheral electrode; the peripheral electrode is n + Heavily doped phosphorus silicon or p + Heavily doped borosilicate, the width of the peripheral electrode is 10 μm, and the doping concentration is 10 19 cm -3 。
5. The nested X-ray three-dimensional trench electrode silicon detector of claim 1, wherein: the central electrode is cylindrical with the radius equal to 5 mu m and the height of 300 mu m, and the central electrode is p + Heavily doped borosilicate or n + Heavily doped phosphorus silicon with a doping concentration of 10 19 cm -3 。
6. The nested X-ray three-dimensional trench electrode silicon detector of claim 1, wherein: the height of the nesting part is 30-50 μm; the cross-section of the nesting portion is circular.
7. The nested X-ray three-dimensional trench electrode silicon detector of claim 1, wherein: the thickness of the electrode contact layer is 1 μm; the electrode contact layer is an aluminum layer.
8. The nested X-ray three-dimensional trench electrode silicon detector of claim 1, wherein: the thickness of the lower silicon dioxide protective layer is 1 mu m, and the lower silicon dioxide protective layer is a silicon dioxide protective layer with a quadrangular cross section.
9. The method of claim 1The nested X-ray three-dimensional groove electrode silicon detector is characterized in that: the substrate part is a p-type silicon substrate which is p-type lightly doped borosilicate with the doping concentration of 10 12 cm -3 。
CN202210981812.3A 2022-08-16 2022-08-16 Nested X-ray three-dimensional groove electrode silicon detector Pending CN115472703A (en)

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