CN115472203A - Flash memory wear frequency prediction method and device and storage medium - Google Patents
Flash memory wear frequency prediction method and device and storage medium Download PDFInfo
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- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- G11C—STATIC STORES
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- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
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Abstract
The embodiment of the application provides a method, a device and a storage medium for predicting flash memory wear times, wherein the method for predicting flash memory wear times comprises the following steps: sending an operation instruction to a flash memory to control the flash memory to execute a preset operation; acquiring the execution time of the flash memory for executing the preset operation; and determining the predicted wear frequency of the flash memory according to the execution time. According to the method and the device, the predicted wear times of the flash memory are determined through the execution time of the preset operation executed by the flash memory, and the wear times of the flash memory can be obtained under the condition that the wear times are not recorded or cannot be normally read from the flash memory.
Description
Technical Field
The present application relates to the field of flash memory life prediction technologies, and in particular, to a method and an apparatus for predicting wear times of a flash memory, and a storage medium.
Background
Solid State Drives (SSD) generally use Flash Memory (Flash Memory) as a storage medium. Flash memory has a certain wear life, and the more the wear frequency is, the worse the performance is. The service life of the flash memory represents the number of times that the flash memory can perform operations before failure, and is an important parameter index of the flash memory. However, when the wear count is not recorded in the flash memory or the wear count cannot be read normally, the wear count of the flash memory cannot be obtained.
Disclosure of Invention
In view of the above, it is desirable to provide a method, an apparatus and a storage medium for predicting the wear count of a flash memory, which can obtain the wear count of the flash memory without recording the wear count or reading the wear count normally.
A first aspect of the present application provides a method for predicting a flash memory wear count, the method including:
sending an operation instruction to a flash memory to control the flash memory to execute a preset operation;
acquiring the execution time of the flash memory for executing the preset operation; and
and determining the predicted wear times of the flash memory according to the execution time.
According to a specific embodiment of the first aspect of the present application, the predetermined operation is a program operation.
According to a specific embodiment of the first aspect of the present application, the predetermined operation is an erase operation.
According to a specific embodiment of the first aspect of the present application, the preset operation includes a program operation and an erase operation; the obtaining of the execution time of the flash memory to execute the preset operation includes: acquiring a first execution time for the flash memory to execute the programming operation; acquiring a second execution time for executing the erasing operation by the flash memory; the determining the wear-out times of the flash memory according to the execution time comprises: determining a first wear-out number of the flash memory according to the first execution time; determining a second wear-out number of the flash memory according to the second execution time; and determining the predicted wear times of the flash memory according to the first wear times and the second wear times.
According to a specific embodiment of the first aspect of the present application, the determining the predicted wear count of the flash memory according to the first wear count and the second wear count comprises: determining an average of the first number of wear times and the second number of wear times as the predicted number of wear times.
According to a specific embodiment of the first aspect of the present application, the prediction method further includes: executing a plurality of abrasion operations on the flash memory, and recording the operation time of the abrasion operations and the total abrasion times corresponding to the operation time; acquiring the corresponding relation between the operation time and the total abrasion times; the determining the predicted wear count of the flash memory according to the execution time comprises: and determining the predicted wear frequency of the flash memory according to the corresponding relation between the execution time and the total wear frequency and the operation time.
According to a specific embodiment of the first aspect of the present application, the performing a number of wear operations on the flash memory comprises: and executing a plurality of wear-out operations on the flash memory, wherein each wear-out operation comprises a programming operation and an erasing operation.
According to a specific embodiment of the first aspect of the present application, the prediction method further includes: and respectively executing the wear-out operation on a plurality of flash memories, and taking the average value of the time for each flash memory to execute the wear-out operation as the operation time.
A second aspect of the present application provides a flash memory wear number prediction apparatus, the apparatus including: the flash memory wear time prediction method comprises a processor and a memory, wherein the memory is used for storing a plurality of program instructions, and when the processor calls the program instructions, the flash memory wear time prediction method is realized.
A third aspect of the present application provides a computer-readable storage medium storing a plurality of program instructions adapted to be loaded by a processor and to execute the flash wear time prediction method as described above.
Compared with the prior art, the application has at least the following beneficial effects:
the predicted wear times of the flash memory are determined through the execution time of the preset operation executed by the flash memory, and the wear times of the flash memory can be obtained under the condition that the wear times are not recorded or cannot be read normally.
Drawings
Fig. 1 is a flowchart illustrating a method for predicting wear times of a flash memory according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of a variation relationship between an erasing time and a total number of wearing times according to an embodiment of the present application.
FIG. 3 is a diagram illustrating a variation of a program time and a total number of wear operations according to an embodiment of the present application.
Fig. 4 is a sub-flowchart of step S14 in fig. 1.
Fig. 5 is a sub-flowchart of step S15 in fig. 1.
Fig. 6 is a block diagram illustrating a flash wear frequency prediction apparatus according to an embodiment of the present disclosure.
The following detailed description will further illustrate the present application in conjunction with the above-described figures.
Description of the main elements
Flash memory wear frequency prediction device 100
Detailed Description
In order that the above objects, features and advantages of the present application can be more clearly understood, a detailed description of the present application will be made below with reference to the accompanying drawings and detailed description. In addition, the embodiments and features of the embodiments of the present application may be combined with each other without conflict. In the following description, numerous specific details are set forth to provide a thorough understanding of the present application, and the described embodiments are merely a subset of the embodiments of the present application, rather than all embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes all and any combination of one or more of the associated listed items.
In various embodiments of the present application, for convenience in description and not limitation, the term "coupled" as used in the specification and claims of the present application is not limited to physical or mechanical connections, either direct or indirect. "upper", "lower", "above", "below", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships are changed accordingly.
Referring to fig. 1, an embodiment of the present application provides a method for predicting flash wear times, including the following steps:
and step S11, performing a plurality of abrasion operations on the flash memory, and recording the operation time of the abrasion operation and the corresponding total abrasion times.
In one possible implementation, a plurality of wear operations are performed on the flash memory, each wear operation including a program operation and an erase operation. Namely, a loop operation consisting of a program operation and an erase operation is performed as one wear of the flash memory.
In one possible implementation, the wear-out operation is performed separately for several flash memories, and the average value of the time taken for each flash memory to perform the wear-out operation is taken as the final operation time. It can be appreciated that since there is a difference between the chips of different flash memories, by performing the wear-out operation on as many chips as possible, and collecting an average of the time taken by the chips to perform the wear-out operation, the accuracy of the final data (i.e., the operation time) can be improved. It will be appreciated that in this embodiment, the wear level of several flash memories should also be comparable, i.e. the flash memories have the same or similar total number of wear times.
And step S12, obtaining the corresponding relation between the operation time and the total abrasion times.
In one possible implementation, from the operation time and the total number of wear times corresponding to the operation time recorded in step S11, a line graph can be drawn to reflect the correspondence between the operation time and the total number of wear times.
Referring to fig. 2 and 3, fig. 2 is a schematic diagram illustrating a variation relationship between the erasing time and the total number of wearing times. Fig. 3 shows a diagram of the variation of the programming time with the total number of wear. The horizontal axis represents total wear times, and the vertical axis represents erase time (see fig. 2) or program time (see fig. 3).
It should be understood that the erase time or program time is exemplary and may differ from the actual erase time or program time of the flash memory, such as by one or more orders of magnitude. The value corresponding to the erase time or the program time is only used to reflect the variation relationship with the total number of wear. Taking the value 110 on the ordinate in fig. 2 as an example, the actual erase time of the corresponding flash memory is about 10ms, and the actual program time of the corresponding flash memory is about 2.2ms. It is understood that the present embodiment is not limited to the proportional relationship between the erase time (or program time) and the actual erase (or program) time of the flash memory.
As can be seen from fig. 2, the erase time increases with the total number of wear. For example, the erasing time corresponds to about 100 when the total number of wearing times is 1, about 102 when the total number of wearing times is 800, about 104 when the total number of wearing times is 1600, about 105 when the total number of wearing times is 3000, about 110 when the total number of wearing times is 5000, and about 120 when the total number of wearing times is 7000.
As can be seen from fig. 3, the programming time decreases as the total number of wear increases. For example, the erasing time corresponds to about 400 when the total number of wearing is 1, about 396 when the total number of wearing is 800, about 390 when the total number of wearing is 1600, about 380 when the total number of wearing is 3000, about 370 when the total number of wearing is 5000, and about 350 when the total number of wearing is 7000.
It will be appreciated that the point at which the total number of wear events is taken can be adjusted as required. The points may be taken at equal intervals, for example, one point per hundred wear intervals, or may be taken at unequal intervals.
It can be understood that as the total number of wear increases, the flash memory generates more and more oxide layer traps and interface states, which results in more and more electrons remaining in the oxide layer, and the flash memory additionally requires fewer electrons to reach the target voltage, so the programming time is shorter and shorter as the number of wear increases. It is increasingly difficult to erase these electrons, and longer times are required to erase enough electrons to bring the voltage to the target state, and thus erase times are increasing.
And S13, sending an operation instruction to the flash memory to control the flash memory to execute preset operation.
In one possible implementation, the preset operation is one of a program operation or an erase operation. In another possible implementation, the preset operation may also include both a program operation and an erase operation.
Step S14, obtaining an execution time for the flash memory to execute the preset operation.
Specifically, when the preset operation in step 13 is one of a program operation or an erase operation, the execution time only needs to calculate the time taken by the corresponding operation. For example, when the preset operation is the program operation in step S13, the execution time is the time taken to execute one program operation. For another example, when the predetermined operation is the erase operation in step S13, the execution time is the time taken to execute one erase operation.
In one possible implementation, the preset operation in step S13 includes both a program operation and an erase operation. In this embodiment, the execution time of the program operation and the execution time of the erase operation need to be obtained at the same time in step S14.
Please refer to fig. 4, which illustrates a sub-flowchart of step S14 in this implementation manner.
In step S141, a first execution time for the flash memory to execute the programming operation is obtained.
In step S142, a second execution time for the flash memory to execute the erase operation is obtained.
And step S15, determining the predicted wear frequency of the flash memory according to the execution time.
Specifically, the predicted wear count of the flash memory is determined based on the execution time and the correspondence between the total wear count and the operation time obtained in step S12.
According to the existing corresponding relationship between the operation time and the total wear times, and in combination with the current execution time (programming time or erasing time), a corresponding total wear times can be obtained. This total number of wearing times can be regarded as the currently predicted number of wearing times of the flash memory, i.e., the predicted number of wearing times. It will be appreciated that the predicted wear times can be used to estimate the remaining useful life of the flash memory.
In a possible implementation manner, the preset operation in step S13 includes both a program operation and an erase operation, and the corresponding first operation time and second operation time can be obtained in step S14.
Please refer to fig. 5, which illustrates a sub-flowchart of step S15 in this implementation manner.
Step S151 determines a first wear count of the flash memory according to the first execution time.
And step S152, determining a second wear frequency of the flash memory according to the second execution time.
It is understood that, in step S151 and step S152, the first wear count (or the second wear count) of the flash memory can be determined by the first execution time (or the second execution time) and the corresponding relationship between the total wear count and the operation time obtained in step S12.
Step S153, determining the predicted wear frequency of the flash memory according to the first wear frequency and the second wear frequency.
In one possible implementation, an average of the first wear number and the second wear number is determined as the predicted wear number. It can be understood that the accuracy of the final data (i.e., the predicted wear count) can be improved by calculating the first wear count and the second wear count at the same time and taking the average of the first wear count and the second wear count as the final predicted wear count.
It will be appreciated that, in an ideal case, the first wear rate and the second wear rate of the flash memory should be the same or similar. For example, when the obtained programming time is 110, the more 5K predicted wear times can be obtained according to the corresponding relationship between the programming time and the total wear times shown in fig. 2. When the obtained erasing time is 370, it can be found that the predicted number of wearing times is also about 5K times from the correspondence between the erasing time and the total number of wearing times shown in fig. 3.
Referring to fig. 6, an embodiment of the present application further provides a flash wear frequency prediction apparatus 100, where the flash wear frequency prediction apparatus 100 includes a processor 110, a memory 120, and a computer program 121 stored in the memory 120 and executable on the processor 110. The processor 110 and the memory 120 may be connected by a bus and communicate with each other. The processor 110 executes the computer program 121 to implement the steps in the flash memory wear frequency prediction method embodiment, such as steps S11 to S15 shown in fig. 1, steps S141 to S142 shown in fig. 4, and steps S151 to S153 shown in fig. 5.
It will be understood by those skilled in the art that the schematic diagram is merely an example of the flash wear time prediction apparatus 100, and does not constitute a limitation of the flash wear time prediction apparatus 100, and may include more or less components than those shown, or combine some components, or different components, for example, the flash wear time prediction apparatus 100 may further include an input-output device, a network access device, a bus, etc.
The Processor 110 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc. The processor 110 may be a microprocessor or any conventional processor, etc., and the processor 110 is a control center of the flash wear time prediction apparatus 100 and various interfaces and lines are used to connect various parts of the entire flash wear time prediction apparatus 100.
The memory 120 may be used to store a computer program 121 and/or a module/unit, and the processor 110 may implement various functions of the flash wear time prediction apparatus 100 by running or executing the computer program and/or the module/unit stored in the memory 120 and calling data stored in the memory 120. The memory 120 may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required by at least one function (such as a sound playing function, an image playing function, etc.), and the like; the storage data area may store data (such as audio data, a phone book, etc.) created according to the use of the flash memory wear number prediction apparatus 100, and the like. In addition, the memory 120 may include high speed random access Flash memory, and may also include non-volatile Flash memory, such as a hard disk, a memory, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), at least one disk Flash, a Flash memory device, or other volatile solid state Flash memory.
It is understood that the above-described embodiment of the flash wear time prediction apparatus 100 is merely illustrative, for example, the division of the modules is only a logical function division, and other division manners may be provided in actual implementation. In addition, each functional module in the embodiments of the present invention may be integrated into the same processing module, or each module may exist alone physically, or two or more modules may be integrated into the same module. The integrated module can be realized in a hardware form, and can also be realized in a form of hardware and a software functional module.
The embodiment of the application also provides a computer readable storage medium. The computer readable storage medium has stored therein program instructions, which when run on a computing device, cause the computing device to execute the flash memory wear time prediction method provided by the foregoing embodiments.
Obviously, the wear frequency of the flash memory can be obtained under the condition that the wear frequency is not recorded or cannot be normally read from the flash memory.
It should be understood by those skilled in the art that the above embodiments are only for illustrating the present application and are not used as limitations of the present application, and that suitable modifications and changes of the above embodiments are within the scope of the claims of the present application as long as they are within the spirit and scope of the present application.
Claims (10)
1. A method for predicting wear times of a flash memory, the method comprising:
sending an operation instruction to a flash memory to control the flash memory to execute a preset operation;
acquiring the execution time of the flash memory for executing the preset operation; and
and determining the predicted wear times of the flash memory according to the execution time.
2. The method of claim 1, wherein the predetermined operation is a program operation.
3. The method of claim 1, wherein the predetermined operation is an erase operation.
4. The method of claim 1, wherein the predetermined operation comprises a program operation and an erase operation;
the obtaining of the execution time of the flash memory to execute the preset operation includes:
acquiring a first execution time for the flash memory to execute the programming operation; acquiring a second execution time for executing the erasing operation by the flash memory;
the determining the wear-out times of the flash memory according to the execution time comprises:
determining a first wear-out number of the flash memory according to the first execution time;
determining a second wear-out number of the flash memory according to the second execution time; and
and determining the predicted wear times of the flash memory according to the first wear times and the second wear times.
5. The method of claim 4, wherein said determining the predicted number of wear times of the flash memory based on the first number of wear times and the second number of wear times comprises: determining an average of the first number of wear times and the second number of wear times as the predicted number of wear times.
6. The method of predicting wear times of a flash memory of claim 1, wherein the method of predicting wear times further comprises:
executing a plurality of abrasion operations on the flash memory, and recording the operation time of the abrasion operations and the total abrasion times corresponding to the operation time; and
acquiring the corresponding relation between the operation time and the total abrasion times;
the determining the predicted wear count of the flash memory according to the execution time comprises:
and determining the predicted wear frequency of the flash memory according to the corresponding relation between the execution time and the total wear frequency and the operation time.
7. The method of predicting flash memory wear times of claim 6, wherein said performing a number of wear operations on said flash memory comprises: performing a plurality of wear-out operations on the flash memory, wherein each wear-out operation comprises a programming operation and an erasing operation.
8. The method of predicting the wear count of a flash memory according to claim 6, wherein the method of predicting further comprises: and respectively executing the wear-out operation on a plurality of flash memories, and taking the average value of the time for each flash memory to execute the wear-out operation as the operation time.
9. A flash memory wear frequency prediction device, comprising: a processor and a memory, the memory for storing a plurality of program instructions, the processor when calling the program instructions implementing the flash wear time prediction method of any one of claims 1 to 8.
10. A computer-readable storage medium storing a plurality of program instructions adapted to be loaded by a processor and to execute the flash wear time prediction method according to any one of claims 1 to 8.
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| CN116880747A (en) * | 2023-06-13 | 2023-10-13 | 珠海妙存科技有限公司 | Flash memory wear degree judging method and system and electronic equipment |
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