CN115472101A - Display device - Google Patents
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- CN115472101A CN115472101A CN202211259984.6A CN202211259984A CN115472101A CN 115472101 A CN115472101 A CN 115472101A CN 202211259984 A CN202211259984 A CN 202211259984A CN 115472101 A CN115472101 A CN 115472101A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- color conversion
- display device
- shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 129
- 239000010410 layer Substances 0.000 claims description 576
- 239000000463 material Substances 0.000 claims description 125
- 125000006850 spacer group Chemical group 0.000 claims description 67
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000012790 adhesive layer Substances 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 65
- 238000000034 method Methods 0.000 description 44
- 239000004973 liquid crystal related substance Substances 0.000 description 29
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 27
- 229910052731 fluorine Inorganic materials 0.000 description 27
- 239000011737 fluorine Substances 0.000 description 27
- 230000008569 process Effects 0.000 description 26
- 238000012986 modification Methods 0.000 description 24
- 230000004048 modification Effects 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 18
- 239000002096 quantum dot Substances 0.000 description 15
- 239000007921 spray Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 11
- 238000007639 printing Methods 0.000 description 9
- 238000005507 spraying Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000011247 coating layer Substances 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000001127 nanoimprint lithography Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- HVYWMOMLDIMFJA-DPAQBDIFSA-N cholesterol Chemical compound C1C=C2C[C@@H](O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 HVYWMOMLDIMFJA-DPAQBDIFSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000012811 non-conductive material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 235000012000 cholesterol Nutrition 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- -1 transition metal nitride Chemical class 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- OWOMRZKBDFBMHP-UHFFFAOYSA-N zinc antimony(3+) oxygen(2-) Chemical compound [O--].[Zn++].[Sb+3] OWOMRZKBDFBMHP-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133609—Direct backlight including means for improving the color mixing, e.g. white
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133621—Illuminating devices providing coloured light
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/30—Authentication, i.e. establishing the identity or authorisation of security principals
- G06F21/31—User authentication
- G06F21/32—User authentication using biometric data, e.g. fingerprints, iris scans or voiceprints
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/048—Interaction techniques based on graphical user interfaces [GUI]
- G06F3/0481—Interaction techniques based on graphical user interfaces [GUI] based on specific properties of the displayed interaction object or a metaphor-based environment, e.g. interaction with desktop elements like windows or icons, or assisted by a cursor's changing behaviour or appearance
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
- G09F9/335—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes being organic light emitting diodes [OLED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/36—Micro- or nanomaterials
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2221/00—Indexing scheme relating to security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F2221/21—Indexing scheme relating to G06F21/00 and subgroups addressing additional information or applications relating to security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F2221/2133—Verifying human interaction, e.g., Captcha
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Computer Security & Cryptography (AREA)
- Human Computer Interaction (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Software Systems (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Storage Device Security (AREA)
- Collating Specific Patterns (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
Some embodiments of the present disclosure provide a display device including a plurality of pixels, one of the plurality of pixels including a color conversion layer. The pixels also include a dielectric layer disposed on the color conversion layer. Wherein the refractive index of the dielectric layer is smaller than that of the color conversion layer.
Description
The application is applied in 2018, 2 month and 12 day, and has the application number of 201810146834.1 and the name of display
Divisional application of Chinese invention patent application of device
Technical Field
The present disclosure relates to a display device, and more particularly, to a display device with high transmittance or wide color gamut.
Background
With the development of digital technology, display devices have been widely used in various aspects of daily life, such as televisions, notebooks, computers, mobile phones, smart phones, and other modern information devices, and the display devices are increasingly being developed to be light, thin, small, high-brightness, high-chromaticity, or fashionable. The display device includes, for example, a light emitting diode display device.
The display device industry is moving toward mass production, and any reduction in the manufacturing cost or process steps of the display device can bring great economic benefits. However, the current display devices are not satisfactory in every aspect.
Therefore, there is still a need for a display device that can further improve the display quality (including brightness or color gamut) or reduce the manufacturing cost or process complexity.
Disclosure of Invention
Some embodiments of the present disclosure provide a display device including a plurality of light emitting diodes, a plurality of pixels, a first light shielding layer, and a second light shielding layer. The plurality of pixels correspond to the plurality of light emitting diodes, and one of the plurality of pixels includes a filter layer. The first light-shielding layer defines a plurality of first openings, wherein the filter layer of one of the pixels is disposed in one of the first openings. And a second light-shielding layer defining a plurality of second openings, wherein one of the plurality of light-emitting diodes is disposed in one of the plurality of second openings, and the first light-shielding layer and the second light-shielding layer are at least partially overlapped.
Some embodiments of the present disclosure provide a display device including a plurality of light emitting diodes, a color conversion layer, a filter layer, a first light-shielding layer, a second light-shielding layer, and a body frame. The color conversion layer is positioned above one of the plurality of light emitting diodes. The filter layer is located above the color conversion layer. The first light-shielding layer defines a plurality of first openings, wherein the color conversion layer is disposed in one of the plurality of first openings. The first shading layer and the second shading layer at least partially overlap. The material layer is disposed in the second light-shielding layer in the first light-shielding layer, and the material layer overlaps at least two of the plurality of light-emitting diodes.
Drawings
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below, wherein:
fig. 1 is a cross-sectional schematic view of a display device according to some embodiments of the present disclosure;
fig. 2 is a cross-sectional schematic view of a light emitting diode according to some embodiments of the present disclosure;
FIG. 3 is a graph illustrating transmittance versus wavelength for light passing through a red, green, and yellow filter, according to some embodiments;
fig. 4 is a cross-sectional schematic view of a display device according to some embodiments of the present disclosure;
fig. 5 is a cross-sectional schematic view of a display device according to some embodiments of the present disclosure;
FIG. 6 is a schematic cross-sectional view of the liquid crystal substrate shown in FIG. 5, according to some embodiments of the present disclosure;
7-17 are cross-sectional schematic views of display devices according to some embodiments of the present disclosure;
FIGS. 18A-18B are schematic cross-sectional views illustrating a process for forming a layer between spacers according to some embodiments of the present disclosure;
FIGS. 19A-19C are schematic cross-sectional views illustrating a process for forming a material layer between spacer layers according to some embodiments of the present disclosure;
FIGS. 20A-20B are cross-sectional views illustrating a process for forming a material layer between spacer layers according to some embodiments of the present disclosure.
Description of the symbols:
100A-100N-display device
102 to substrate
104 to the light-shielding layer
106-blue filter layer
108-blue color conversion layer
110-yellow filter layer
112 to green color conversion layer
114-yellow filter layer
116-Red color conversion layer
118 adhesive layer
120 to light-shielding layer
122-light emitting diode
123-Filler
124-semiconductor layer
126-light emitting layer
128 semiconductor layer
130-conductive pad
132 conductive pad
134 protective layer
136-conductive layer
137-base plate
138-filling layer
140 to liquid crystal display element
142 first element layer
144 display layer
146 second element layer
148 dielectric layer
150-green filter layer
152-red filter layer
154-frame glue layer
156-spacer element
158-air
160-short wavelength filter layer
200-substrate
202-spacing layer
204 material layer
206 bottom layer
208 plasma process
210-interval structure
400-nozzle
402-spraying Material
Detailed Description
The following describes an element substrate, a display device, and a method for manufacturing the display device according to some embodiments of the present disclosure in detail. It is to be understood that the following description provides many different embodiments for implementing different aspects of the disclosure. The following description of certain embodiments of the present disclosure is provided for simplicity and clarity and is provided by way of example only and not by way of limitation. Repeated reference numerals or designations may be used in various embodiments to simply describe some embodiments of the disclosure and do not necessarily indicate any relationship between the various embodiments and/or structures discussed. When a first material layer is on or above a second material layer, the first material layer may be in direct contact with the second material layer. Alternatively, the first material layer and the second material layer may be separated by one or more other material layers, and the first material layer and the second material layer may not be in direct contact.
Furthermore, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used in connection with embodiments to describe one element's relative relationship to another element of the drawings. It will be understood that if the device of the drawings is turned over, with the top and bottom reversed, elements described as being on the "lower" side will be elements on the "upper" side.
As used herein, the term "about", "about" or "substantially" generally means within 20%, preferably within 10%, and more preferably within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The amounts given herein are approximate, that is, the meanings of "about", "about" and "about" may be implied without specifically stating "about", "about" or "about".
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these terms are only used to distinguish one element, component, region, layer and/or section from another. Thus, a first element, component, region, layer, and/or section discussed below could be termed a second element, component, region, layer, and/or section without departing from the teachings of some embodiments of the present disclosure.
Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Some embodiments of the disclosure can be understood with reference to the accompanying drawings, which are also considered part of the description of the embodiments of the disclosure. It is to be understood that the drawings of the embodiments of the present disclosure are not drawn to scale of actual devices or elements. The shapes and thicknesses of the embodiments may be exaggerated in the drawings in order to clearly show the features of the embodiments of the present disclosure. Further, the structures and devices in the drawings are schematically depicted in order to clearly illustrate the features of the embodiments of the present disclosure.
In some embodiments of the present disclosure, relative terms such as "lower," "upper," "horizontal," "vertical," "lower," "above," "top," "bottom," and the like are to be understood as referring to the segment and the orientation depicted in the associated drawings. This relative terminology is for convenience of description only and does not imply that the described apparatus should be manufactured or operated in a particular orientation. Terms concerning bonding, connecting, and the like, such as "connected," "interconnected," and the like, may mean that two structures are in direct contact or that the two structures are not in direct contact, unless otherwise specified, and wherein other structures are interposed between the two structures. And the terms coupled and connected should also be construed to include both structures being movable or both structures being fixed.
It is to be noted that the term "substrate" may include devices already formed on the substrate or various layers covering the substrate, for example, a plurality of active devices (transistor devices) may be formed thereon as required, but the substrate is only shown as a flat substrate for simplifying the drawing.
The thickness of a structure described in the embodiments of the present disclosure represents the average thickness of the structure after the outlier (outlier) is removed. The outliers may be the thickness of the edges, distinct micro-grooves, or distinct micro-raised regions. After removing these outliers, the majority of the thickness of the structure is within the plus or minus three standard deviations of the mean thickness.
Fig. 1 is a cross-sectional schematic view of a display device 100A according to some embodiments of the present disclosure. The display device 100A includes a blue pixel B, a green pixel G, and a red pixel R, which can emit light with different wavelengths respectively. In some embodiments, the display device 100A may include other pixels, such as an infrared pixel or a white pixel, without limitation.
In some embodiments, the display device 100A includes a substrate 102, and the substrate 102 may be used as a protective device or an encapsulation device of the display device 100A, for example, to prevent a material layer or a device such as a filter layer, a dielectric layer, a color conversion layer, or a display layer from being physically or chemically damaged. The substrate 102 may be, for example, a transparent substrate, such as glass, ceramic, plastic, or any other suitable substrate, but is not limited thereto. The substrate 102 may include, for example, but not limited to, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), silicon oxide, silicon nitride, silicon oxynitride, or high dielectric constant (high dielectric constant) dielectric material, or a combination thereof. The high-k dielectric material may be, but is not limited to, a metal oxide, a metal nitride, a metal silicide, a transition metal oxide, a transition metal nitride, or a combination thereof.
In some embodiments, the display device 100A includes a light-shielding layer 104, and the light-shielding layer 104 is disposed on the substrate 102 and correspondingly disposed between two adjacent pixels. As shown in fig. 1, the patterned light-shielding layer 104 defines a plurality of openings, which can distinguish or define different pixels, such as a blue pixel B, a green pixel G, or a red pixel R. In addition, the light-shielding layer 104 can be used to shield areas or elements of the display device 100A that are not required to display colors, such as scan lines, data lines, or thin film transistors. The material of the light-shielding layer 104 may be, for example, black photoresist, black printing ink, black resin, or other suitable light-shielding materials. The light shielding material may prevent light from penetrating, but is not limited to light absorption, and may be a light shielding material having a high reflective property, such as a white material having a reflective property, or may not be limited to a single material. In some embodiments, the light-shielding layer 104 may be, for example, a multi-layer material structure in which a material with high reflective property (e.g., metal or white ink) or a material with high light-absorbing property (e.g., black ink or black photoresist) is coated on the periphery, but the middle layer is transparent or other materials.
In some embodiments, as shown in fig. 1, a color conversion layer or a filter layer may be included in each pixel (e.g., blue pixel B, green pixel G, red pixel R), respectively. For example, a blue filter layer 106 and a blue color conversion layer 108 provided on the blue filter layer 106 are formed in correspondence with the blue pixels B, a yellow filter layer 110 and a green color conversion layer 112 provided on the yellow filter layer 110 are formed in correspondence with the green pixels G, and a yellow filter layer 114 and a red color conversion layer 116 provided on the yellow filter layer 114 are formed in correspondence with the red pixels R.
The filter layer can allow light with specific wavelength to pass through. For example, the blue filter layer may allow light with a wavelength between about 400nm and 500nm to pass through, the green filter layer may allow light with a wavelength between about 500nm and 570nm to pass through, and the red filter layer may allow light with a wavelength between about 620nm and 750nm to pass through, but the ranges of light wavelengths that the filter layers can pass through corresponding to are only examples and are not limited in this case.
In some embodiments, as shown in fig. 1, a yellow filter layer 110 and a yellow filter layer 114 may be disposed in the corresponding green pixel G or red pixel R, respectively. The yellow filter layer 110 and the yellow filter layer 114 may be manufactured by the same process or different processes. That is, when the yellow filter layer 110 and the yellow filter layer 114 are manufactured by different processes, the thickness of the yellow filter layer 110 and the thickness of the yellow filter layer 114 may be different. Referring to fig. 3, fig. 3 is a graph illustrating light transmittance versus wavelength after light passes through red, green, and yellow filter layers, respectively, according to some embodiments. Band 302 represents light that has passed through a yellow filter, which corresponds to a transmittance spectrum at different wavelengths, band 304 represents light that has passed through a green filter, which corresponds to a transmittance spectrum at different wavelengths, and band 306 represents light that has passed through a red filter, which corresponds to a transmittance spectrum at different wavelengths. As shown in fig. 3, the yellow filter layer has a transmittance of greater than 95% for light having a wavelength in the range of about 500-780 nm. The transmittance of the green filter layer for light with a wavelength in the range of about 500-570nm is less than that of the yellow filter layer, so that the use of the yellow filter layer instead of the green filter layer is helpful to improve the light extraction efficiency of the green pixel G.
Moreover, as shown in FIG. 3, the light transmittance of the light passing through the yellow filter layer in the wavelength range of about 620-750nm is substantially equal to the light transmittance of the light passing through the red filter layer, and the light transmittance in the wavelength range of 620-750nm is mostly maintained at 95%. Thus, a yellow filter layer may replace the red filter layer. By disposing the yellow filter layer in the green pixel G and the red pixel R, the light emitting efficiency can be improved, and the manufacturing steps for forming the display device 100A can be simplified (for example, a yellow filter layer is used to replace the red filter layer and the green filter layer), thereby reducing the manufacturing cost or the manufacturing time.
In some embodiments, as shown in fig. 1, the blue color conversion layer 108 is formed in the blue pixel B, the green color conversion layer 112 is formed in the green pixel G, and the red color conversion layer 116 is formed in the red pixel R. The blue color conversion layer 108, the green color conversion layer 112, and the red color conversion layer 116 may, for example, include quantum dot thin films, fluorescent materials, or other light conversion materials. For example, the materials of the blue color conversion layer 108, the green color conversion layer 112, or the red color conversion layer 116 can include organic or inorganic layers that are intermixed or doped with quantum dots (quantum dots). The quantum dots may include zinc, cadmium, selenium, sulfur, indium phosphide (InP), gallium antimonide (GaSb), gallium arsenide (GaAs), or a combination thereof, without limitation. The particle size of the quantum dots is, for example, in the range of about 1nm to about 30 nm. When the quantum dots with different particle sizes are excited by light, the quantum dots can be converted to generate light with different wavelengths. For example, the quantum dots with small particle size can excite light with shorter wavelength (e.g. blue light), and the quantum dots with large particle size can excite light with longer wavelength (e.g. red light), so that light with different wavelengths can be generated by adjusting the particle size of the quantum dots, and the effect of wide color gamut can be achieved. For example, blue color conversion layer 108 mixed or doped with quantum dots of a first particle size may be excited to produce blue light, green color conversion layer 112 mixed or doped with quantum dots of a second particle size may be excited to produce green light, and red color conversion layer 116 mixed or doped with quantum dots of a third particle size may be excited to produce red light. In other embodiments, the color conversion layer material may also be an organic layer or an inorganic layer mixed or doped with Perovskite (Perovskite), and is not limited herein. In other embodiments, the color conversion layer material may be a fluorescent material, for example, and may absorb a part of the light in the short wavelength range and emit the light in the longer wavelength range, which is not limited herein.
In addition, in some embodiments, the display device 100A further includes a color conversion enhancing layer (not shown). The color conversion enhancing layer may be disposed between the filter layer and the color conversion layer, for example. The color conversion enhancing layer can be, for example, a material that reflects blue light, and can reflect un-excited blue light back to the blue color conversion layer 108, the green color conversion layer 112, or the red color conversion layer 116, respectively, so that blue light that has not been completely converted can be excited by the blue color conversion layer 108, the green color conversion layer 112, or the red color conversion layer 116, and the light conversion efficiency can be enhanced.
As shown in fig. 1, the display device 100A includes an adhesive layer 118. The adhesive layer 118 may be used to adhere a light emitting unit or a substrate having a light emitting display layer, for example. The material of the Adhesive layer 118 may include an Optically Clear Adhesive (OCA), an Optically Clear Resin (OCR), or other suitable transparent Adhesive material, or a combination thereof, but is not limited thereto.
As shown in fig. 1, the display device 100A includes a light-shielding layer 120. The light-shielding layer 120 and the light-shielding layer 104 may substantially overlap each other. For example, the light-shielding layer 120 and the light-shielding layer 104 may completely overlap or partially overlap. The light-shielding layer 120 may define a plurality of openings, and at least one light-emitting diode 122 is correspondingly disposed in the openings, for example. In some embodiments, the material of the light-shielding layer 120 may be the same as or similar to the material of the light-shielding layer 104. In some embodiments, the material of the light-shielding layer 120 and the material of the light-shielding layer 104 may be different, and are not limited herein. In some embodiments, the light-shielding layer 120 may have a trapezoidal shape, a rectangular shape, an arc-edge shape, other suitable shapes, or a combination thereof, but is not limited thereto.
In some embodiments, as shown in fig. 1, the display device 100A includes a light emitting diode 122 and a substrate 137. In some embodiments, the light emitting diode 122 may include a Quantum Dot (QD), a fluorescent (fluorescent) material, a phosphorescent (phosphor) material, a light-emitting diode (LED), a micro-light-emitting diode (micro-light-emitting diode or mini-light-emitting diode), or other display medium, but the disclosure is not limited thereto. In some embodiments, the chip size of the light emitting diode is about 300 micrometers (μm) to 10 millimeters (mm), the chip size of the micro light emitting diode (mini LED) is about 100 micrometers (μm) to 300 micrometers (μm), and the chip size of the micro light emitting diode (micro LED) is about 1 micrometer (μm) to 100 micrometers (μm), but the disclosure is not limited thereto. In other embodiments, the light emitting diode 122 may include an organic light-emitting diode (OLED), and the structure of the display device 100A may be appropriately adjusted, which is not limited in the disclosure.
As shown in fig. 1, the light emitting diodes 122 may be correspondingly disposed in the blue pixel B, the green pixel G, or the red pixel R, respectively, and as shown in fig. 1, the light emitting diodes 122 are correspondingly disposed in the openings defined by the light-shielding layer 120. The light emitting diode 122 can be electrically connected to the substrate 137 through the conductive layer 136. In some embodiments, conductive layer 136 may be a soldered material. In addition, the filler 123 may be disposed between the substrate 137 and the adhesive layer 118. In some embodiments, the filler 123 may be, for example, a transparent material, but is not limited thereto. The substrate 137 may contain a plurality of circuits (not shown) including, for example, thin film transistors or other devices.
Referring to fig. 2, fig. 2 is a schematic cross-sectional view of a light emitting diode 122 according to some embodiments of the present disclosure. As shown in fig. 2, in some embodiments, the light emitting diode 122 may include a semiconductor layer 124, a light emitting layer 126, and a semiconductor layer 128. Semiconductor layer 124 and semiconductor layer 128 can be connected to conductive pad 130 and conductive pad 132, respectively. The semiconductor layer 124 and the semiconductor layer 128 may be, for example, elemental semiconductors including amorphous silicon (amorphous-Si), polycrystalline silicon (poly-Si), germanium; a compound semiconductor including gallium nitride (GaN), silicon carbide, gallium arsenide, gallium phosphide, indium arsenide, or indium antimonide; an alloy semiconductor including silicon germanium (SiGe), gallium arsenic phosphide (GaAsP), aluminum gallium arsenide (Al GaAs), indium gallium arsenide (GaInAs), or gallium indium phosphide (GaInP); metal oxides including Indium Gallium Zinc Oxide (IGZO), indium Zinc Oxide (IZO); organic semiconductors, including polycyclic aromatic compounds, or combinations of the above, and are not limited thereto.
As shown in fig. 2, the light emitting layer 126 is disposed between the semiconductor layer 124 and the semiconductor layer 128. The light-emitting layer 126 may, for example, include a homojunction (homojunction), a heterojunction (heterojunction), a Single Quantum Well (SQW), a Multiple Quantum Well (MQW), or other similar structures. In some embodiments, the light emitting layer 126 comprises undoped n-type In x Ga (1-x) And N is added. In other embodiments, the light emitting layer 126 may comprise, for example, al x In y Ga (1-x-y) N, other commonly used materials. In addition, the light emitting layer 126 may, for example, include a multiple quantum well structure in which multiple well layers (e.g., inGaN) and barrier layers (e.g., gaN) are staggered. Furthermore, the formation of the light-emitting layer 126 may include goldThe method belongs to an organic chemical vapor deposition (MOCVD) method, a Molecular Beam Epitaxy (MBE) method, a Hydride Vapor Phase Epitaxy (HVPE) method, a Liquid Phase Epitaxy (LPE) method, or other suitable chemical vapor deposition methods, and is not limited herein.
As shown in fig. 2, the protection layer 134 may be disposed on the side of the semiconductor layer 124, the light emitting layer 126, the semiconductor layer 128, or a portion of the conductive pads 130 and 132, for example. In some embodiments, the protection layer 134 may be, for example, a material having a reflective property or a light-absorbing property, but is not limited thereto. When the passivation layer 134 is a reflective material, it can include a multi-layer dielectric film that is a Distributed Bragg Reflector (DBR), a mixed layer material (e.g., a three-layer structure of dielectric layer-metal layer-dielectric layer stack), or an Omni-Directional reflector (ODR), but is not limited thereto. When the protection layer 134 is a material with light absorption property, the protection layer 134 can be, for example, a photoresist material (e.g., white photoresist or black photoresist). It should be noted that, since it is necessary to avoid short circuit between the passivation layer 134 and other metal layers, at least one layer of the passivation layer 134 is a non-conductive material, for example, the surface layer contacting the conductive pad 130 and the conductive pad 132 is a non-conductive material. In some embodiments, the outer surface layer of protective layer 134 is, for example, a non-conductive material.
As shown in fig. 2, the conductive pad 130 is disposed adjacent to the semiconductor layer 128, and the conductive pad 132 is disposed adjacent to the semiconductor layer 124. The materials of the conductive pads 130 and 132 may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, alloys thereof, combinations thereof, or other metal materials with good conductivity.
In addition, as shown in fig. 2, the light emitting diode 122 includes a conductive layer 136. The conductive layer 136 may be electrically connected to the light emitting diode 122 or other substrate (not shown) having electronic elements or circuits. Conductive layer 136 may be, for example, a low melting point alloy material. In some embodiments, the conductive layer 136 may be, for example, a eutectic material having a melting point less than 300 ℃, such as an indium tin alloy, a zinc tin alloy, a silver tin alloy, jin Yin alloy, a gold tin alloy, or other suitable material. In some embodiments, conductive layer 136 may be a stacked structure of multiple layers, such as: copper/nickel/gold or copper/nickel/palladium/gold, etc., without limitation.
In some embodiments, the leds 122 may be formed using flip-chip technology. In addition, the light emitting diode 122 may be a Lateral (lareral) structure or a Vertical (Vertical) structure, which is not limited herein. In the case of a lateral structure of the light emitting diode, the two electrodes of the light emitting diode are, for example, disposed on the same side of the light emitting diode. In the case of a vertical light-emitting diode, the two electrodes of the light-emitting diode are arranged, for example, on the two sides of the light-emitting diode.
The substrate with electronic components includes an integrated circuit substrate electrically connected to the light-emitting unit, such as a microprocessor, a memory device and/or other devices. The integrated circuit may also include various passive and active components, such as resistors, or other types of capacitors, without limitation.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 4 is a cross-sectional diagram of a display device 100B according to some embodiments. Display device 100B may be similar to display device 100A as described above, with the difference being the use of fill layer 138 in place of blue color conversion layer 108 in the corresponding blue pixel B of display device 100B. In some embodiments, the led 122 can emit blue light, so the blue color conversion layer 108 can be replaced by a filling layer 138, for example, and the material of the filling layer 138 can be a material with high refractive index or high diffusivity, for example. The material of the filling layer 138 may include, for example, silicon gel, epoxy resin, polymethyl methacrylate, polycarbonate, or other suitable composite materials, and is not limited thereto.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 5 is a cross-sectional diagram of a display device 100C according to some embodiments. The display device 100C may be similar to the display device 100A described above, with the difference that disposed under the adhesive layer 118 is a liquid crystal display element 140. In some embodiments, the adhesive layer 118 may not even be needed, and is not limited herein.
In some embodiments, the liquid crystal display element 140 is an element including an LCD (liquid crystal display). FIG. 6 is a cross-sectional schematic diagram of a liquid crystal display device 140 according to some embodiments. The liquid crystal display device 140 at least includes a first device layer 142, a display layer 144, and a second device layer 146. In other embodiments, the liquid crystal display device 140 may include other devices. In some embodiments, the first element layer 142 may include an upper polarizing layer (not shown), which may be a metal periodic nanostructure formed by, for example, nano-imprinting (nano-imprinting), but is not limited thereto, such as an In-cell polarizer (In-cell polarizer). The nano-imprinting (nano-imprinting) may be performed by, for example, thermoplastic nano-imprinting lithography (Thermoplastic nano-imprinting lithography), resist-free direct thermal nano-imprinting lithography (Resist-free direct thermal imprinting lithography), or UV photo nano-imprinting lithography (photo nano-imprinting lithography), but is not limited thereto.
In some embodiments, the display layer 144 is disposed between the first element layer 142 and the second element layer 146, and the first element layer 142 and the second element layer 146 include circuits or alignment layers (not shown), which can control the transmittance of light rays by controlling the arrangement states of liquid crystal molecules in the display layer 144 to be different and have different polarization or refraction characteristics to the light rays, so as to achieve different gray scales. The display layer 144 may be configured with a structural design of electrodes or an Alignment manner of the Alignment layer, so that the display layer 144 may be applied to different liquid crystal modes, such as Twisted Nematic (TN) liquid crystal, super Twisted Nematic (STN) liquid crystal, vertical Alignment (VA) liquid crystal, in-Plane Switching (IPS) liquid crystal, cholesterol (cholesterol) liquid crystal, blue Phase (Blue Phase) liquid crystal, fringe Field Switching (FFS) liquid crystal, or any other suitable liquid crystal.
In some embodiments, the second element layer 146 includes a lower polarizing layer (not shown), wherein the display layer 144 may be disposed between the upper polarizing layer and the lower polarizing layer, for example. The lower polarizing layer may include, for example, a protective film, a Tri-acetate cellulose (TAC), a Polyvinyl alcohol (PVA), a Tri-acetate cellulose (TAC), a Pressure Sensitive Adhesive (PSA), a release film, and the like, where the Polyvinyl alcohol (PVA) of the polarizing substrate is attached to a transparent substrate composed of TAC on two sides to support or protect the polarizing substrate or prevent the polarizing substrate from retracting, but not limited thereto. The lower polarizer layer is directly attached to a substrate (not shown) of the second device layer 146. The transmittance of light is controlled by the arrangement of the liquid crystal molecules in the display layer 144 and the arrangement of the transmission axes of the upper and lower polarizing layers. A backlight module (not shown) may be further disposed under the second element layer 146.
In some embodiments, the second element layer 146 may include a Thin Film Transistor (TFT), for example. The material of the electrode may be copper, aluminum, tungsten, gold, chromium, nickel, platinum, titanium, alloys thereof, or Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), indium Gallium Zinc Oxide (IGZO), indium Tin Zinc Oxide (ITZO), antimony Tin Oxide (ATO), antimony Zinc Oxide (AZO), combinations thereof, or any other suitable transparent conductive oxide material, without being limited thereto.
The second device layer 146 may, for example, comprise a substrate, which may, for example, be a glass substrate, a plastic substrate, or other suitable substrate. The material of the substrate may include glass, quartz, organic polymer, inorganic polymer, metal, or the like. The substrate may be made of silicon dioxide, phosphosilicate glass (PSG), a low-k dielectric material, or other suitable dielectric materials. The low-k dielectric material includes, but is not limited to, fluorinated Silica Glass (FSG), carbon-doped silicon oxide (carbon-doped silicon oxide), parylene, polyimide, combinations thereof, or other suitable materials. In some embodiments, the second device layer may include, for example, a gate driver circuit, a data driver circuit, a demultiplexer, or other devices, and is not limited thereto.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 7 is a cross-sectional view of a display device 100D according to some embodiments. The display device 100D may be similar to the display device 100A described above, with the difference that the display device 100D further includes the dielectric layer 148. In some embodiments, the dielectric layer 148 may be disposed between the color conversion layer and the filter layer. For example, in the corresponding blue pixel B, the dielectric layer 148 is disposed between the blue filter layer 106 and the blue color conversion layer 108. Similarly, the dielectric layer 148 may be disposed in the color pixel G or the color pixel B, respectively. In some embodiments, the refractive index of the dielectric layer 148 is less than the refractive index of the color conversion layer. In some embodiments, the refractive index of the dielectric layer 148 is less than the refractive index of the filter layer. In some embodiments, the difference between the refractive index (n 1) of the dielectric layer 148 and the refractive index (n 2) of the color conversion layer or the refractive index (n 3) of the color conversion layer is greater than or equal to about 0.05 and less than or equal to 1 (0.05 ≦ n2-n1 ≦ 0.05 ≦ n3-n1 ≦ 1. For example, the difference between the refractive index of the blue color conversion layer 108, the green color conversion layer 112, or the red color conversion layer 116 and the refractive index of the dielectric layer 148 is about 0.05 or more and 1 or less, respectively.
The dielectric material with the refractive index smaller than that of the filter layer and/or the color conversion layer is arranged between the filter layer and the color conversion layer, so that the chance that light is converted back to the color conversion layer and then is converted again is improved, and the color conversion efficiency of the light is improved. In some embodiments, the dielectric layer 148 may comprise aluminum gallium nitride (AlGaN), gallium nitride (GaN), silicon dioxide (SiO) 2 ) Optical resin, epoxy resin (epoxy), silicone resin (silicone), and the like.
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in FIG. 7 may be replaced with a fill layer 138 as shown in FIG. 4. In some embodiments, the light-shielding layer 120 and the light-emitting diode 122 (including the elements included in the light-emitting diode 122 in fig. 2) shown in fig. 7 can be replaced by the liquid crystal display element 140 shown in fig. 6. In the embodiment of the liquid crystal display device 140, the adhesive layer 118 can be omitted, but is not limited thereto.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 8 is a cross-sectional diagram of a display device 100E according to some embodiments. The display device 100E may be similar to the display device 100D as described above, wherein the difference is that the yellow filter layer 110 correspondingly disposed in the green pixel G is replaced by the green filter layer 150, and the yellow filter layer 114 correspondingly disposed in the red pixel R is replaced by the red filter layer 152. As described above, the dielectric layer is disposed between the filter layer and the color conversion layer, so that the color conversion efficiency of light can be improved. At this time, the color purity of the color can be improved by disposing the green filter layer in the corresponding green pixel G and disposing the red filter layer in the corresponding red pixel R.
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in FIG. 8 may be replaced with a fill layer 138 as shown in FIG. 4. In some embodiments, the light-shielding layer 120 and the light-emitting diode 122 (including the elements included in the light-emitting diode 122 in fig. 2) shown in fig. 8 can be replaced by the liquid crystal display element 140 shown in fig. 6.
Various changes and modifications may be made in the embodiments of the present disclosure. Referring to fig. 9, fig. 9 is a cross-sectional view of a display device 100F according to some embodiments. The display device 100F may be similar to the display device 100D as described above, with the difference that the dielectric layer 148 may be further disposed between the light-shielding layer 104 and the light-shielding layer 120. As shown in fig. 9, in some embodiments, color conversion layers (e.g., the blue color conversion layer 108, the green color conversion layer 112, and the red color conversion layer 116) may be disposed on the light emitting diode 122, for example, the color conversion layers (e.g., the blue color conversion layer 108, the green color conversion layer 112, and the red color conversion layer 116) may be in contact with the light emitting diode 122, and the blue filter layer 106 and the blue color conversion layer 108, or the yellow filter layer 110 and the green color conversion layer 112, or the yellow filter layer 114 and the red color conversion layer 116 may be separated, respectively, by the dielectric layer 148. In this embodiment, the dielectric layer 148 can be formed as a whole layer structure, for example, the dielectric layer 148 is disposed on the surfaces of the light-shielding layer 120, the blue color conversion layer 108, the green color conversion layer 112 and the red color conversion layer 116, and the dielectric layer 148 is not required to be separated through the light-shielding layer 120 or the light-shielding layer 104, so that the dielectric layer 148 does not need to be patterned, or the adhesive layer 118 can be omitted, thereby making the fabrication easier or reducing the cost. In the manufacturing method of this embodiment, for example, the dielectric layer 148 may be disposed on the substrate 102 on which the blue filter layer 106, the yellow filter layer 110, the yellow filter layer 114, and the light-shielding layer 104 are formed, and then assembled with the substrate 137 on which the light-emitting diode 122 is disposed (the blue color conversion layer 108, the green color conversion layer 112, and the red color conversion layer 116 are disposed on the light-emitting diode 122, respectively), and the manufacturing process sequence of the display device is not limited herein.
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in FIG. 9 may be replaced with a fill layer 138 as shown in FIG. 4. In some embodiments, the light-shielding layer 120 and the light-emitting diodes 122 (including the components included in the light-emitting diodes 122 in fig. 2) shown in fig. 9 can be replaced by the liquid crystal display components 140 shown in fig. 6.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 10 is a cross-sectional view of a display device 100G according to some embodiments. The display device 100G may be similar to the display device 100F described above, wherein the difference is that the yellow filter layer 110 correspondingly disposed in the green pixel G is replaced by the green filter layer 150, and the yellow filter layer 114 correspondingly disposed in the red pixel R is replaced by the red filter layer 152.
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 shown in fig. 10 may be replaced by the filling layer 138 shown in fig. 4, and the dielectric layer 148 in the corresponding blue pixel B may not be required. That is, the dielectric layer 148 is disposed only in the green pixel G and the red pixel R, for example. In other embodiments, the material of the filling layer 138 may be the same as or similar to the material of the dielectric layer 148. The material of the filling layer 138 may be selected from materials having different refractive indexes than the dielectric layer 148. In some embodiments, the light-shielding layer 120 and the light-emitting diode 122 (including the elements included in the light-emitting diode 122 in fig. 2) shown in fig. 10 may be replaced by the liquid crystal display element 140 shown in fig. 6.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 11 is a cross-sectional view of a display device 100H according to some embodiments. The display device 100H may be similar to the display device 100G described above, with the difference that the dielectric layer 148 may be replaced by spacing elements 156 and air (or vacuum layer) 158. In other embodiments, the dielectric layer 148 may be replaced by spacing elements 156, spacing layers 154, and air (or vacuum layer) 158. As shown in fig. 11, the spacer elements 156 may be provided between the light-shielding layer 104 and the light-shielding layer 120. The Spacer element 156 is, for example, a gap control material (Photo Spacer), and the Spacer element 156 may comprise glass, ceramic, plastic, or any other suitable transparent or non-transparent material, without limitation. In some embodiments, the material of the spacing elements 156 may also be similar or identical to the light-shielding layer 104. In some embodiments, the spacer 156 may substantially overlap the light-shielding layer 104 or the light-shielding layer 120 in the normal direction of the substrate 102. In some embodiments, the cross-section of the spacing element 156 may be, for example, a trapezoid, a circle, an arc, or a rectangular (square or rectangular) outline structure, which is not limited herein. The frame adhesive layer 154 may be disposed on the periphery of the spacer 156 for separating or packaging the plurality of groups of green pixels G, red pixels R, and blue pixels B, which is not limited herein. The light-shielding layers 104 and 120 can be used to shield regions or elements of the display device 100H that are not used for displaying colors, such as scan lines (not shown), data lines (not shown), or thin film transistors (not shown).
In addition, in some embodiments, there may be more air 158 between the color conversion layers (e.g., the blue color conversion layer 108, the green color conversion layer 112, and the red color conversion layer 116) and the filter layers (e.g., the blue filter layer 106, the yellow filter layer 110, and the yellow filter layer 114). By providing a layer of air 158 with a low refractive index (the refractive index of the air 158 is approximately equal to 1) between the filter layer and the color conversion layer, the chance that the light is converted back to the light conversion layer and is re-excited after passing through the light conversion layer is increased. In addition, the process or cost for arranging the low-refractive index material can be omitted, and higher economic or working-hour benefits can be achieved.
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in FIG. 11 may be replaced with a fill layer 138 as shown in FIG. 4. In some embodiments, the light-shielding layer 120 and the light-emitting diode 122 (including the elements included in the light-emitting diode 122 in fig. 2) shown in fig. 11 may be replaced by the liquid crystal display element 140 shown in fig. 6.
Various changes and modifications may be made in the embodiments of the present disclosure. Referring to fig. 12, fig. 12 is a schematic cross-sectional view of a display device 100I according to some embodiments. The display device 100I may be similar to the display device 100H described above, wherein the difference is that the yellow filter layer 110 correspondingly disposed in the green pixel G is replaced by the green filter layer 150, and the yellow filter layer 114 correspondingly disposed in the red pixel R is replaced by the red filter layer 152.
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in FIG. 12 may be replaced with a fill layer 138 as shown in FIG. 4. In some embodiments, the light-shielding layer 120 and the light-emitting diode 122 (including the elements included in the light-emitting diode 122 in fig. 2) shown in fig. 12 may be replaced by the liquid crystal display element 140 shown in fig. 6.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 13 is a cross-sectional diagram of a display device 100J according to some embodiments. The display device 100J may be similar to the display device 100D as described above, with the difference that the filter layer is not correspondingly disposed in the blue pixel B, the green pixel G, or the red pixel R. In this embodiment, the dielectric layer 148 may be in direct contact with the substrate 102.
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in FIG. 13 may be replaced with a fill layer 138 as shown in FIG. 4. In some embodiments, the light-shielding layer 120 and the light-emitting diodes 122 (including the components included in the light-emitting diodes 122 in fig. 2) shown in fig. 13 can be replaced by the liquid crystal display components 140 shown in fig. 6.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 14 is a cross-sectional view of a display device 100K according to some embodiments. The display device 100K may be similar to the display device 100D as described above, wherein the difference is that the blue filter layer 106, the yellow filter layer 110 and the yellow filter layer 114 are replaced by a short-wavelength band filter layer 160. The short-wavelength filter layer 160 may block light having a wavelength of 430nm or less, for example, so that the transmittance of light having a wavelength of 430nm or less is less than 5%, for example. That is, after passing through the blue conversion layer 108, the green conversion layer 112 or the red conversion layer 116, the light can be excited and converted into blue light, green light and red light, respectively, and the light with different colors further passes through a short-band filter layer 160 to filter the light with a wavelength below 430nm (e.g., violet light or near-ultraviolet light).
In some embodiments, the short-band filter layer 160 may be replaced with a Distributed Bragg Reflector (DBR). The material of the bragg reflector layer may be a non-metallic material, a dielectric layer material, an optical fiber, or other material. The bragg reflective layer may be composed of a plurality of layers of films having different refractive indexes, and has a function as waveguides (waveguides).
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in FIG. 14 may be replaced with a fill layer 138 as shown in FIG. 4. In some embodiments, the light-shielding layer 120 and the light-emitting diode 122 (including the elements included in the light-emitting diode 122 in fig. 2) shown in fig. 14 may be replaced by the liquid crystal display element 140 shown in fig. 6.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 15 is a cross-sectional view of a display device 100L according to some embodiments. The display device 100L may be similar to the display device 100K described above, with the difference that the short-band filter layer 160 is disposed on the light-shielding layer 104 and between the light-shielding layer 104 and the substrate 102. In this embodiment, the short-wavelength filter layer 160 is disposed on the light-shielding layer 104 and the dielectric layer 148. Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in FIG. 15 may be replaced with a fill layer 138 as shown in FIG. 4. In some embodiments, the light-shielding layer 120 and the light-emitting diode 122 (including the elements included in the light-emitting diode 122 in fig. 2) shown in fig. 15 may be replaced by the liquid crystal display element 140 shown in fig. 6.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 16 is a cross-sectional view of a display device 100M according to some embodiments. The display device 100M may be similar to the display device 100E described above, with the difference that the color conversion layers (e.g., the blue color conversion layer 108, the green color conversion layer 112, and the red color conversion layer 116) are covered by the dielectric layer 148. As shown in fig. 16, the dielectric layer 148 is further disposed on the sidewall of the blue color conversion layer 108, the green color conversion layer 112 or the red color conversion layer 116, that is, the area of the dielectric layer 148 projected on the substrate 102 can be larger than the area of the blue color conversion layer 108, the green color conversion layer 112 or the red color conversion layer 116 projected on the substrate 102 on the normal of the substrate 102. By increasing the contact surface or the contact area between the dielectric layer 148 and the blue color conversion layer 108, the green color conversion layer 112, or the red color conversion layer 116, the chance of light being converted back to the color conversion layer to be re-excited can be increased.
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in fig. 16 may be replaced with a fill layer 138 as shown in fig. 4.
Various changes and modifications may be made in the embodiments of the present disclosure. Fig. 17 is a cross-sectional schematic view of a display device 100N according to some embodiments. The display device 100N may be similar to the display device 100E as described above, with the difference that the display device 100N includes a reflective layer 162 disposed between the light-shielding layer 104 and the adhesive layer 118. As shown in fig. 17, the reflective layer 162, the light-shielding layer 104 and the light-shielding layer 120 may overlap in a normal direction of the substrate 102 (may completely overlap or partially overlap, and is not limited herein). The reflective layer 162 may include a metal material (aluminum, gold, silver, copper, titanium, or other metal material, or metal alloy, but not limited thereto), a non-metal material, a dielectric layer, or a white photoresist. In some embodiments, the material of the reflective layer 162 may be silicon dioxide (SiO) 2 ) Or titanium dioxide (TiO) 2 ) The refractive index of the dielectric material may be adjusted according to the process conditions or the composition ratio, and is not limited thereto.
Various changes and modifications may be made in the embodiments of the present disclosure. In some embodiments, the blue color conversion layer 108 as shown in FIG. 17 may be replaced with a fill layer 138 as shown in FIG. 4.
Referring to FIGS. 18A-18B, FIGS. 18A-18B are cross-sectional views illustrating a process for forming a material layer 204 between spacers 202, according to some embodiments. When using the inkjet printing process, the material layer formed by the spray material has a problem of uneven thickness due to different surface tension characteristics of the spray material with respect to the surfaces of the two materials. In some cases, such as where the material layer has a center protrusion and two side recesses. In other cases, such as where the material layer is recessed and two sides protrude. In order to solve the problem of uneven thickness of the material layer, the whole or the surface of the material in contact with the spraying material can be modified, so that the contact angle between the spraying material and the surface of the material in contact with the spraying material can be controlled within a proper range, and the thickness uniformity of the spraying material can be improved. In some embodiments, the material of the spacer layer 202 may be selected to have a contact angle with water in a range of about 90 ° to 150 °, for example. In some embodiments, the entirety or surface of the material of spacer layer 202 may, for example, contain fluorine (F) elements or fluorine-containing functional groups. In some embodiments, the spacer layer 202 may be, for example, a polymer material, and a fluorine-containing additive is added to form the spacer layer 202 into a fluorine-containing polymer material. In other embodiments, the material of the spacer layer 202 may contain other suitable elements on its entirety or surface, for example, such that the contact angle between the spacer layer 202 and water is in the range of about 90 ° to 150 °. The contact angle with water as referred to herein can be measured by dropping a water bead on the surface of the spacer layer 202 by a contact angle meter (contact angle meter) to measure the contact angle between the water bead and the spacer layer 202.
In some embodiments, as shown in fig. 18A, the substrate 200 is first supplied. The substrate 200 may be a substrate, a device, or a structural layer. When the substrate 200 is a substrate, it may include a transparent substrate, such as a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable transparent substrate.
As shown in fig. 18A, the spacer layer 202 is formed on the substrate 200, and since the whole or the surface of the spacer layer 202 contains fluorine or a functional group containing fluorine, the surface of the spacer layer 202 may have hydrophobicity, for example, to change the surface tension between the surface of the spacer layer 202 and the spray material, and thus change the contact angle between the surface of the spacer layer 202 and the spray material. The contact angle is the angle between the sprayed material and the spacer layer 202 before baking, or other post-processing. In some embodiments, the contact angle between the spray material and the spacer layer 202 may change after the spray material is baked, or other post-processing treatment, but not limited thereto.
By modifying the entire surface or the surface of the spacer layer 202, the contact angle between the spacer layer 202 and a solvent (e.g., water) can be adjusted. For example, if the whole or the surface of the spacer layer 202 does not have fluorine or functional groups containing fluorine, the contact angle between the surface of the spacer layer 202 and water is in the range of about 0 ° to 80 °. In some embodiments, when the entirety or surface of the spacer layer 202 has fluorine, the contact angle between the surface of the spacer layer 202 and water is in the range of about 90 ° to 150 °.
When the whole or the surface of the spacer layer 202 is modified to make the contact angle between the surface of the spacer layer 202 and water have a range of 90 ° to 150 °, the thickness uniformity of the material layer formed on the substrate 200 and between two adjacent spacer layers 202 can be improved by using an inkjet process.
In some embodiments, referring to fig. 18B, when performing an inkjet process, a spray material 402 may be sprayed onto the substrate 200 through a nozzle (nozzle) 400, such that the material layer 204 is formed on the substrate 200 and between two adjacent spacer layers 202. As shown in fig. 18B, when the whole or the surface of the spacer layer 202 is modified, the contact angle θ between the material layer 204 and the spacer layer 202 can be adjusted, so that the material layer 204 can have a relatively flat surface.
In some embodiments, the spacing layer 202 may be, for example, but not limited to, the light-shielding layer 104 or the reflective layer 162 as shown in the embodiments of fig. 1-17. The material layer 204 may be, for example, the blue filter layer 106, the blue color conversion layer 108, the yellow filter layer 110, the green color conversion layer 112, the yellow filter layer 114, the red color conversion layer 116, the dielectric layer 148, the green filter layer 150, or the red filter layer 152 as shown in the embodiments of fig. 1-17, but is not limited thereto. In some embodiments, when the color conversion layer is to be disposed after the dielectric layer is disposed and formed, the dielectric layer may be used as another material other than the light-shielding layer in contact with the spray material (color conversion layer).
Referring to FIGS. 19A-19C, FIGS. 19A-19C are cross-sectional views illustrating a process for forming a material layer 204 between spacers 202, according to some embodiments. As shown in fig. 19A, a spacer layer 202 without fluorine on the surface is first formed on the substrate 200. Thereafter, a bottom layer 206 with fluorine on the surface is formed on the substrate 200, and the bottom layer 206 with fluorine is formed between two adjacent spacers 202. The bottom layer 206 may be, for example, but not limited to, a substrate material of a display device containing fluorine or a dielectric material having a surface containing fluorine.
Next, in some embodiments, as shown in FIG. 19B, a plasma process 208 may be performed, for example, on the entire structure of the spacer layer 202 and the bottom layer 206. In some embodiments, performing the plasma process 208 includes implanting carbon tetrafluoride (CF) 4 ) Fluoromethane (CH) 3 F) Difluoromethane (CH) 2 F 2 ) Other fluorine-containing gases, or other suitable elemental materials, but are not limited thereto. As shown in fig. 19B, after the plasma process 208 is performed, fluorine on the surface of the bottom layer 206 may be transferred to the surface (side or top surface) of the spacer layer 202.
In some embodiments, referring to fig. 19C, an inkjet process is performed and a spray material 402 is sprayed or coated onto the substrate 200 through the nozzle 400, such that the material layer 204 is formed on the bottom layer 206 and between two adjacent spacer layers 202.
In some embodiments, the spacer layer 202 may be, for example, the light-shielding layer 104 or the reflective layer 162 as shown in the embodiments of fig. 1-17, and the bottom layer 206 may be, for example, the blue filter layer 106, the yellow filter layer 110, the yellow filter layer 114, the dielectric layer 148, the green filter layer 150, or the red filter layer 152 as shown in the embodiments of fig. 1-17. The material layer 204 can be, for example, the blue color conversion layer 108, the green color conversion layer 112, or the red color conversion layer 116 as shown in the embodiments of fig. 1-17, but is not limited thereto, and the process sequence of the material layers can be changed.
In this embodiment, for example, a color conversion layer, a filter layer or a dielectric layer having fluorine on the surface may be used, and the fluorine on the color conversion layer, the filter layer or the dielectric layer is transferred onto the surface of the light-shielding layer 104 or the reflective layer 162 by performing a plasma process.
Referring to FIGS. 20A-20B, FIGS. 20A-20B are cross-sectional views illustrating a process for forming a material layer 204 between spacer layers 202, according to some embodiments. In some embodiments, as shown in FIG. 20A, a spacer layer 202 without fluorine on the surface is formed over the substrate 200. Thereafter, a coating layer 208 is formed on the top surface and sidewalls of the spacer layer 202. In some embodiments, the coating layer 208 may be, for example, a polymer material having a surface containing fluorine, and the spacer layer 202 may be, for example, a monomer or polymer material that does not contain fluorine. That is, the spacer layer 202 may be made of a material that does not contain fluorine, but the coating layer 208 is formed, for example, the coating layer 208 and the spacer layer 202 are bonded to each other to make the outer surface of the spacer layer 202 contain fluorine, but not limited thereto.
As described above, the spacer layer 202 interacts or bonds with the coating layer 208 to form the spacer structure 210. By forming the spacer 210 by forming the coating layer 208 having fluorine on the surface of the spacer layer 202, the contact angle between the spacer 210 and the solvent can be adjusted. For example, in some embodiments, the surface of the spacer structure 210 has a contact angle with water, for example, in a range between about 90 ° and 150 °.
In some embodiments, referring to fig. 20B, an inkjet process is performed to spray a spray material 402 onto the substrate 200 through the nozzle 400, such that the material layer 204 is formed on the substrate 200 and between two adjacent spacer structures 210.
In some embodiments, the coating layer with fluorine on the surface thereof may be formed on the light-shielding layer 104 or the reflective layer 162 shown in the embodiments of fig. 1 to 17, or the combination thereof, to form the spacer structure, and the material layer 204 may be, but is not limited to, the blue filter layer 106, the blue color conversion layer 108, the yellow filter layer 110, the green color conversion layer 112, the yellow filter layer 114, the red color conversion layer 116, the dielectric layer 148, the green filter layer 150, or the red filter layer 152 shown in the embodiments of fig. 1 to 17.
The embodiment disclosed in fig. 18 to 20 is to change the contact angle characteristic of the spacer layer 202 or the spacer structure 210 with water by including fluorine (F) on the surface thereof, but the present invention is not limited to fluorine (F), and other chemical elements can be included on the surface of the spacer layer 202 or the spacer structure 210 to make the contact angle between the surface of the spacer layer 202 or the spacer structure 210 and water be in the range of about 90 ° to 150 °.
In addition, the volume of material sprayed or sprayed by each nozzle may vary due to variability among nozzles. Therefore, if the same nozzle is used to spray or spray the material on the same column of pixels or the same row of pixels, the color conversion layer, the dielectric layer or the filter layer formed may have a linear color unevenness (mura) problem. In some embodiments, a mosaic printing (mosaic printing) method or a mixing nozzle printing (mixing nozzle printing) method may be used in combination to mitigate the color unevenness (mura) problem described above.
More specifically, the mosaic printing method refers to randomly spraying or coating a material in pixels corresponding to different columns or rows using a plurality of nozzles, instead of using the same nozzle in pixels fixed in the same column or pixels in the same row, in order to avoid color unevenness in a line shape (in the column or row direction) due to a difference in spraying between different nozzles.
The hybrid nozzle printing method refers to a method of spraying or spraying a material using two or more nozzles, for example, when a color conversion layer, a dielectric layer, or a filter layer is formed in the same pixel. Firstly, the volume of the material sprayed by each nozzle is calculated respectively, and then the matching combination of the nozzles is distributed according to the calculated volume. For example, two or more nozzles may be used to spray the material in the same pixel, and similarly, different nozzles may be used to spray the material in other pixels to achieve a material layer with a substantially equal thickness between different pixels. In other embodiments, a color conversion layer, a dielectric layer or a filter layer with approximately equal film thickness between different pixels can be obtained by using a mosaic printing method and a mixed nozzle printing method in combination.
Although embodiments of the present disclosure and their advantages have been disclosed above, it should be understood that various changes, substitutions and alterations can be made herein by those skilled in the art without departing from the spirit and scope of the disclosure. Moreover, the scope of the present disclosure is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification, but rather, the process, machine, manufacture, composition of matter, means, methods and steps, presently existing or later to be developed that can be utilized according to the embodiments of the present disclosure and that will be readily apparent to those skilled in the art from the disclosure herein. Accordingly, the scope of the present disclosure includes the processes, machines, manufacture, compositions of matter, means, methods, and steps described above. Moreover, each claim constitutes a separate embodiment, and the scope of protection of the present disclosure also includes combinations of claims and embodiments.
Claims (10)
1. A display device, comprising:
a plurality of light emitting diodes;
a plurality of pixels corresponding to the plurality of light emitting diodes, wherein one of the plurality of pixels comprises a filter layer;
a first light-shielding layer defining a plurality of first openings, wherein the light-filtering layer of one of the pixels is disposed in one of the first openings; and
and a second light-shielding layer defining a plurality of second openings, wherein one of the plurality of light-emitting diodes is disposed in one of the plurality of second openings, and the first light-shielding layer and the second light-shielding layer are at least partially overlapped.
2. The display device according to claim 1, further comprising a spacer disposed between the first and second light-shielding layers.
3. The display device according to claim 2, wherein a material of the spacer element is different from a material of the first light shielding layer.
4. The display device of claim 1, wherein one of the plurality of pixels further comprises a color conversion layer disposed between the filter layer and one of the plurality of light emitting diodes.
5. The display device according to claim 1, further comprising an adhesion layer disposed between the first and second light-shielding layers.
6. The display device of claim 5, wherein the adhesive layer is disposed between the filter layer and one of the plurality of light emitting diodes.
7. A display device, comprising:
a plurality of light emitting diodes;
a color conversion layer located above one of the plurality of light emitting diodes;
a filter layer located above the color conversion layer;
a first light-shielding layer defining a plurality of first openings, wherein the color conversion layer is disposed in one of the plurality of first openings;
a second light-shielding layer, wherein the first light-shielding layer and the second light-shielding layer are at least partially overlapped; and
a material layer disposed in the first light shielding layer in the second light shielding layer, wherein the material layer overlaps at least two of the plurality of light emitting diodes.
8. The display device of claim 7, wherein the material layer comprises silicon oxide or a silicon-containing material.
9. The display device according to claim 7, further comprising an adhesive layer disposed between the first and second light-shielding layers.
10. The display device of claim 9, wherein the adhesive layer is disposed between the filter layer and one of the plurality of light emitting diodes.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762539579P | 2017-08-01 | 2017-08-01 | |
US62/539,579 | 2017-08-01 | ||
CN201810146834.1A CN109324435B (en) | 2017-08-01 | 2018-02-12 | Display device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810146834.1A Division CN109324435B (en) | 2017-08-01 | 2018-02-12 | Display device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115472101A true CN115472101A (en) | 2022-12-13 |
Family
ID=65229453
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202211259984.6A Pending CN115472101A (en) | 2017-08-01 | 2018-02-12 | Display device |
CN201810146834.1A Active CN109324435B (en) | 2017-08-01 | 2018-02-12 | Display device |
CN201810178352.4A Active CN109326559B (en) | 2017-08-01 | 2018-03-05 | Method for manufacturing semiconductor device |
CN202011376023.4A Active CN112420801B (en) | 2017-08-01 | 2018-04-24 | Display apparatus |
CN201810373809.7A Active CN109326209B (en) | 2017-08-01 | 2018-04-24 | Display device |
CN201810746566.7A Pending CN109325329A (en) | 2017-08-01 | 2018-07-09 | The method of user is verified on the electronic device |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810146834.1A Active CN109324435B (en) | 2017-08-01 | 2018-02-12 | Display device |
CN201810178352.4A Active CN109326559B (en) | 2017-08-01 | 2018-03-05 | Method for manufacturing semiconductor device |
CN202011376023.4A Active CN112420801B (en) | 2017-08-01 | 2018-04-24 | Display apparatus |
CN201810373809.7A Active CN109326209B (en) | 2017-08-01 | 2018-04-24 | Display device |
CN201810746566.7A Pending CN109325329A (en) | 2017-08-01 | 2018-07-09 | The method of user is verified on the electronic device |
Country Status (5)
Country | Link |
---|---|
US (6) | US10353243B2 (en) |
EP (1) | EP4287279A3 (en) |
KR (1) | KR102564126B1 (en) |
CN (6) | CN115472101A (en) |
PH (1) | PH12018000424A1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
US20230288755A1 (en) | 2023-09-14 |
US20190041698A1 (en) | 2019-02-07 |
CN109324435A (en) | 2019-02-12 |
KR20190013515A (en) | 2019-02-11 |
US20200041844A1 (en) | 2020-02-06 |
CN109326559A (en) | 2019-02-12 |
CN109325329A (en) | 2019-02-12 |
US10481431B2 (en) | 2019-11-19 |
US11693275B2 (en) | 2023-07-04 |
CN109326209A (en) | 2019-02-12 |
US20190042717A1 (en) | 2019-02-07 |
US20190294003A1 (en) | 2019-09-26 |
US20220276535A1 (en) | 2022-09-01 |
CN109324435B (en) | 2022-11-01 |
KR102564126B1 (en) | 2023-08-04 |
EP4287279A2 (en) | 2023-12-06 |
CN109326559B (en) | 2021-02-23 |
US10353243B2 (en) | 2019-07-16 |
CN112420801B (en) | 2024-06-14 |
US11003024B2 (en) | 2021-05-11 |
CN112420801A (en) | 2021-02-26 |
CN109326209B (en) | 2020-12-22 |
EP4287279A3 (en) | 2024-03-13 |
PH12018000424A1 (en) | 2019-07-01 |
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