CN104681699B - Light-emitting component and display device - Google Patents
Light-emitting component and display device Download PDFInfo
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- CN104681699B CN104681699B CN201510015416.5A CN201510015416A CN104681699B CN 104681699 B CN104681699 B CN 104681699B CN 201510015416 A CN201510015416 A CN 201510015416A CN 104681699 B CN104681699 B CN 104681699B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
- H05B33/24—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
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Abstract
The present invention relates to the light-emitting component of resonator structure and display device, when such as thickness is shone than design load generation deviation, it can also suppress luminance fluctuation.With resonator structure, it has the luminescent layer of the first reflection part, the second reflection part and configuration between first reflection part and the second reflection part, the part of light resonated between first reflection part and the second reflection part is set to be passed through from first reflection part or second reflection part, the resonator output spectrum of the resonator structure reaches that the wavelength of maximum is located at the internal illumination spectrum of the luminescent layer and reaches that the wavelength and light of maximum are regarded and imitates function and reach between the wavelength of maximum.
Description
(the application is to be based on into the National Phase in China date being December 12, Application No. in 2011
200980159845.2 (international application no：PCT/JP2009/002645 the divisional application of application for a patent for invention))
Technical field
The present invention relates to light-emitting component and display device.
Background technology
EL element is known as the light-emitting component in the display devices such as display equipment and lighting device, wherein adopting
With when applying voltage because electroluminescent (EL) phenomenon produces self luminous material.EL element is film-form light-emitting component, its
In the luminescent layer of organic material or inorganic material is formed between upper electrode and lower electrode, lighted by upper and lower part electrode pair
Layer, which applies voltage, makes it light.
The light-emitting component of resonator structure (so-called microresonator structure) is have developed in recent years, and it is by making upper electrode
It is completely reflecting mirror with the side in lower electrode, it is the pellicle mirror through a part of wavelength to make the opposing party, so that luminescent layer is sent out
The light gone out produces resonance (for example, referring to patent document 1,2).
Patent Document 1 discloses a kind of light-emitting component, it makes the peak wavelength of internal illumination spectrum be produced with resonance part
The peak wavelength of multi interference spectrum mutually stagger, reduce dependence of the white to angle of visibility.Make the multi interference light of red (R)
The peak wavelength of spectrum is offset to long wavelength side (+10nm), makes the peak wavelength of multi interference spectrum of green (G) to long wavelength
Side (+4nm) is offset, and the peak wavelength of the multi interference spectrum of blue (B) is offset to short wavelength side (- 10nm), thus
Reduce dependence of the white to field-of-view angle.
A kind of light-emitting component is also disclosed that in patent document 2, it makes the peak wavelength of internal illumination spectrum be produced with resonance part
The peak wavelength of raw multi interference spectrum mutually staggers, and reduces dependence of the white to angle of visibility.But, with patent document 1 not
Together, the peak wavelength of its multi interference spectrum for making red (R) and blue (B) is consistent with the peak wavelength of internal illumination spectrum.
Technology disclosed in patent document 1 and 2 such as giant display perhaps for requiring the aobvious of big angle of visibility characteristic
Showing device effectively, but is specific to the miniscope of personal use in portable terminal, personal computer, navigation system etc.
In the case of, the brightness disproportionation of positive direction can exceed permissible range sometimes.
That is, in the case of using resonator structure, because of its filtering feature and the highly directive of luminous output, positive direction
Brightness increases.The display device of big angle of visibility characteristic is not needed, the display device of such as personal use make use of the directive property, with
The situations such as the TV of big angle of visibility are needed to compare, it is desirable to which the brightness disproportionation of positive direction is smaller.But, the film of resonator structure
Light-emitting component, its filtering feature is sensitive to distance between mirrors (resonator optical path length), if in process due to mismachining tolerance
Make resonator optical path length uneven, then the chromaticity coordinates (excitation) of positive direction and brightness change can exceed permissible range sometimes.
Prior art literature
Patent document
Patent document 1：Japanese Patent Publication 2002-367770 publications
Patent document 2：Japanese Patent Publication 2007-316611 publications
The content of the invention
It is an example of problem to be solved by this invention above.An object of the present invention is to provide a kind of resonance
The light-emitting component and display device of structure, even if thickness deviates with respect to design load, resonator optical path length changes,
Luminance fluctuation can be suppressed.
The light-emitting component of the present invention is characterized in, with resonator structure, the resonator structure include the first reflection part,
The luminescent layer of second reflection part and configuration between first reflection part and the second reflection part；It is anti-described first
A part for the light resonated between part and second reflection part is penetrated through first reflection part or described second
Reflection part is passed through, and the resonator output spectrum of the resonator structure reaches the wavelength of maximum, positioned at the luminescent layer
Internal illumination spectrum reaches that the wavelength and light of maximum are reached between the wavelength of maximum depending on effect function.
The display device of the present invention is characterized in, with multiple resonator structures, and the resonator structure includes the first reflection
The luminescent layer of part, the second reflection part and configuration between first reflection part and the second reflection part；Described
A part for the light resonated between one reflection part and second reflection part is through first reflection part or described second
Reflection part is passed through, and the resonator output spectrum projected from the resonator structure reaches the wavelength of maximum, positioned at the hair
The internal illumination spectrum of photosphere reaches that the wavelength and light of maximum are reached between the wavelength of maximum depending on effect function.
Brief description of the drawings
Fig. 1 is the longitudinal section of the light-emitting component of first embodiment of the invention.
Fig. 2 is the top view of the light-emitting component of first embodiment of the invention.
Fig. 3 is the figure for representing with blue (B) spectrum during for object.
Fig. 4 is the rate of change R for representing with blue (B) luminous intensity during for objectEWith the figure of the relation of rate of change of brightness.
Fig. 5 is the figure for representing with blue (B) Thickness Variation and the relation of front face brightness value during for object.
Fig. 6 is the figure for representing with blue (B) spectrum during for object.
Fig. 7 is the figure for representing with red (R) spectrum during for object.
Fig. 8 is the figure for representing with red (R) spectrum during for object.
Fig. 9 is the figure for representing with red (R) Thickness Variation and the relation of front face brightness value during for object.
Figure 10 is the longitudinal section of the light-emitting component of four embodiment of the invention.
Figure 11 is the longitudinal section of the light-emitting component of fifth embodiment of the invention.
Symbol description
1 substrate
2 anodes
3 organic layers
31 hole injection layers
32 hole transporting layers
33 luminescent layers
34 electron supplying layers
4 negative electrodes
5 wall parts
Embodiment
Describe the light-emitting component of the present invention and the preferred embodiment of display device in detail with reference to the accompanying drawings.Following
Explanation in, by with being carried out exemplified by sending red (R), green (G), the display device of the light-emitting component of blue (B) light respectively
Explanation.But, embodiments described below does not constitute the restriction of the technical scope to the present invention.
(first embodiment)
In example shown in Fig. 1 and Fig. 2, configured in public substrate 1 and send red (R), green (G), blue (B) light
3 light-emitting components (R, G, B), form RGB unit.Fig. 1 is light-emitting component (R, G, B) longitudinal section, and Fig. 2 is top view.It is real
In the display device on border, multiple light-emitting components (R, G, B) formation viewing area is arranged on substrate 1, configuration (not shown) is utilized
Passive matrix is carried out in the drive circuit outside viewing area, or active drive is carried out to each element configuration driven circuit.
Light-emitting component (R, G, B) in present embodiment, as shown in figure 1, being laminated on substrate as the first reflection part
Anode 2, organic layer 3 and the negative electrode 4 as the second reflection part, light from be formed with film surface side project, i.e., it is so-called
Top light emitting (top emission) structure.These RGB light-emitting components are separated by the wall part 5 for being referred to as dike (bank).Also may be used
To be laminated organic layer or the inorganic layers such as diaphragm seal on negative electrode 4.Although not shown in figure, can also further it be laminated for preventing
The only film or substrate of external light reflection.
Anode 2 is double-layer structure, including reflecting electrode 21 and transparency electrode 22.Anode 2 connects with hole injection layer 31
The high material of materials'use work function.Specifically, the material of reflecting electrode 21 can use such as Al, Cr, Mo, Ni, Pt, Au,
The metals such as Ag, or alloy or intermetallic compound containing these metals etc..The thickness of reflecting electrode 21 is, for example, 100nm.Instead
Radio pole 21 for the reflectivity of 400~700nm wavelength lights average value more than 80%, preferred high reflectance.In addition, transparent
The material of electrode 22 metal oxygen such as can use ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide)
Compound etc..The thickness of transparency electrode 22 is, for example, 75nm.Although eliminating diagram in fig. 1 and 2, anode 2 is connected with extraction
Electrode (distribution electrode).Anode 2 can also be the single-layer electrodes with reflecting electrode 21.
In organic layer 3, a part of layer can be made up of inorganic material.It can also further split and there is more layers,
Or can also make single layer that there is multiple layers of function and stacking number is reduced.Organic layer 3 shown in Fig. 1 is multilayer knot
Structure, it is sequentially laminated with hole injection layer 31, hole transporting layer 32, luminescent layer 33 and electron supplying layer since the side of anode 2
34.Organic layer 3 at least has luminescent layer 33, but is produced to effectively facilitate electro optical phenomenon, is preferably configured hole
Implanted layer 31, hole transporting layer 32 and electron supplying layer 34 etc..
When constituting resonator structure, each light-emitting components of RGB have optimal resonator optical path length respectively.Fig. 1's
In structure, reflecting electrode 21 is resonator optical path length with the spacing distance of the reflecting surface of negative electrode 4.As an example, for
Red (R), to obtain optimum resonance device optical path length, it is 300nm to make stacking thickness；For green (G), to obtain optimum resonance
Device optical path length, it is 235nm to make stacking thickness；For blue (B), to obtain optimum resonance device optical path length, make stacking thickness
For 200nm.Above-mentioned resonator optical path length is for example adjusted by adjusting the thickness of organic layer 3.But, as described above, adding
It is difficult to entirely prevent thickness off-design value during work.Especially film is difficult to control to when using rubbing method formation organic layer 3
It is thick.When for example by ink-jet method film forming, the deviation of interelement thickness can reach more than 5%.
In structure shown in Fig. 1, as one, resonator optical path length is adjusted by the thickness for changing hole injection layer 31
Degree.Specifically, the thickness (design load) of the hole injection layer 31 of red (R) is 125nm；The hole injection layer 31 of green (G)
Thickness (design load) is 65nm；The thickness (design load) of the hole injection layer 31 of blue (B) is 20nm.In RGB resonator knot
In structure, transfer layer 32, luminescent layer 33, electron supplying layer 34 thickness it is identical.For example, the thickness (design load) of hole transporting layer 32
For 30nm；The thickness (design load) of luminescent layer 33 is 30nm；The thickness (design load) of electron supplying layer 34 is 40nm.
Hole injection layer 31 and hole transporting layer 32 can be formed by the high material of hole transporting properties, for example, can use
The phthalocyanine compounds such as CuPc (CuPc), star-like (starburst) amine such as m-MTDATA, the polymer of benzidine-type amine, 4,4 '-
Double [N- (1- naphthyls)-N- anilino-s]-biphenyl (4,4 '-bis [N- (1-naphthyl)-N-phenylamino]-biphenyl：
NPB), 4-aminodiphenylamine (N-phenyl-p-phenylenediamine：PPD) aryl tertiary amine, 4- (di-p-tolyl ammonia such as
Base) -4 '-[4- (di-p-tolyl amino) styryl] Stilbene (4- (di-P-tolylamino) -4 '-[4- (di-P-
Tolylamino) styryl] stylbenzene) etc. Stilbene (stilbene) compound, triazole derivative, styrylamine compound,
The organic material of the fullerenes such as buckyballs, C60 etc..It can also use and disperse low molecule in makrolon Polymer material
The macromolecule of material disperses based material.But be not restricted to that above-mentioned material.
Luminescent layer 33, which can be used, produces red (R), green (G), the material of blue (B) electro optical phenomenon.Luminescent layer 33
Material for example can be used (8-hydroxyquinoline) aluminium complex (Alq3) ((8-hydroxyquinolinate) aluminum)
Complex (Alq3)) etc. fluorescent type organo-metallic compound；4,4'- bis- (2,2- diphenylethyllenes)-biphenyl (4,4 '-bis (2,
2’-diphenylvinyl)-biphenyl：The aromatic series dimethylene compound such as DPVBi)；((the 2-methyl styrenes of 1,4- bis-
Base) the styryl benzene compound such as benzene (1,4-bis (2-methylstyryl) benzene)；3- (4- biphenyl) -4- phenyl -5-
Tert-butyl-phenyl-1,2,4- triazoles (3- (4-biphenyl)-4-phenyl-5-t-butylphenyl-1,2,4-triazole：
Triazole (triazole) derivative such as TAZ)；Anthraquinone (anthraquinone) derivative, fluorenes (fluonorene) derivative etc. are glimmering
Light type organic material；Gather to benzene ethylene (polyparaphenylene vinylene：PPV) system, polyfluorene (polyfluorene)
System, polyvinylcarbazole (polyvinylcarbazole：PVK) it is Polymer material；The phosphorescence such as platinum complex or iridium complex
Type organic material.But be not restricted to that above-mentioned material.Can also be without using organic material, and use can produce electro optical phenomenon
Inorganic material.
Electron supplying layer 34 can be formed by the high material of electron transport performance, the silicon such as can use PyPySPyPy
Heterocyclic pentylene (silacyclopentadiene (silole)) derivative, nitre are for Fluorenone (nitro-substituted
Fluorenone) the organic material such as derivative, anthraquinone bismethane (anthraquinodimethane) derivative；Three (8- hydroxyls
Quinoline) aluminium (tris (8-hydroxyquinolinate) aluminum：) etc. Alq3 8-hydroxyquinoline (8-quinolinole) spreads out
Biological metal complex；Metal phthalocyanine (metal phthalocyanine), 3- (4- biphenyl) -5- (4- tert-butyl-phenyls) -
4- phenyl -1,2,4- triazoles (3- (4-biphenyl) -5- (4-t-butylphenyl) -4-phenyl-1,2,4-triazole：
TAZ) triazole derivative, 2- (4- xenyls) -5- (the 4- tert-butyl groups) -1,3,4- oxadiazoles (2- (the 4-biphenylyl) -5- such as
(4-t-butyl)-1,3,4-oxadiazole：PBD) Deng oxadiazole derivatives, buckyballs, C60, CNT (carbon
The fullerene such as nanotube).But it is not limited to above-mentioned material.
The material of negative electrode 4 can use the work function in the region contacted with electron supplying layer 34 low, negative electrode overall reflective and
Through the small material of loss.Specifically, the metals such as Al, Mg, Ag, Au, Ca, Li or its compound can be used in negative electrode 4, or contains
There is alloy of above-mentioned metal etc., make to consist of individual layer or be laminated.In addition, can be in the region contacted with electron supplying layer 34
The thin lithium fluoride of formation or lithia etc., control Electron Injection Characteristics.The thickness of negative electrode 4 is, for example, 10nm.As described above, this reality
Apply in mode, using the top lighting structure that light is released in the side of film forming face, i.e. negative electrode side.Therefore, negative electrode 4 is semi-permeable
The electrode of property, the average value for the transmitance of the light of 400~700nm wavelength is, for example, more than 20%.Using such as electrode
Thickness etc. adjust transmitance.Although eliminating diagram in Fig. 1 and Fig. 2, negative electrode 4 is connected with extraction electrode (wired electric
Pole).
, for example can be by small transparent of vapor and OTR oxygen transmission rate when being further laminated diaphragm seal on negative electrode 4
Inorganic material is formed.Silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum oxide for example can be used in the material of diaphragm seal
(AlOx), aluminium nitride (AlNx) etc..
The photoresist of fluorine-containing composition for example can be used in the material of the referred to as wall part 5 of dike.By making its fluorine-containing, to liquid
State material can play a part of liquid repellency, therefore when using rubbing method film forming, can suppress liquid stream (so-called overlap).
Also, it is preferred that forming wall part 5 by the material with light-proofness.
Here, compared with green (G) light-emitting component, the positive direction brightness of blue (B) and red (R) light-emitting component, more
The easily change of the luminous efficiency caused by peak wavelength shift, produces the luminance fluctuation more than permissible range.Wherein, with red
(R) compare, the luminance fluctuation for changing caused blue (B) by resonator optical path length is bigger.Therefore, in the present embodiment,
Using blue (B) light-emitting component as object, even if thickness off-design value in process, resonator optical path length becomes
Change, can also suppress the change of positive direction brightness.Therefore, in the structure of the present invention, making internal illumination spectrum, light regard effect function
Spectrum and the defeated device that resonates go out spectrum and meet aftermentioned condition.So-called internal illumination spectrum, refers to the luminescence generated by light (PL) of luminescent material
Spectrum.So-called resonator output spectrum, refers to the spectrum of the light through resonator structure.Light is regarded at the maximum of effect function spectrum
Wavelength, under photopic vision standard be 555nm.
That is, as shown in figure 3, making resonator output spectrum S2 peak wavelength (λ S2) internally positioned luminescent spectrum S1 peak
Be worth wavelength (λ S1) and, light regard imitate function spectrum peak wavelength (that is, 555nm) between.Because light regards the peak value ripple of effect function spectrum
A length of common knowledge thus omit diagram.For convenience of description, luminous intensity is referred to as peak wavelength for the wavelength of maximum.
As described above, in the construction shown in fig. 1, making blue (B) that there is optimum resonance device optical path length due to having determined
The stacking thickness (design load) of the organic layer 3 of degree, therefore, also has determined that resonator output spectrum S2 peak wavelength (target
Value).For example, when resonator optical path length (design load) is 200nm, peak wavelength (desired value) is 470nm.In addition, light regards effect
The peak wavelength of function spectrum is 555nm.Therefore, in the present embodiment, performance is selected from the above-mentioned luminescent material listed
Go out internal illumination spectrum S1 luminescent material, internal illumination spectrum S1 is met above-mentioned position relationship, and with the luminescent material shape
Into luminescent layer 33.That is, the material of the spectrum desired by presentation is selected to form luminescent layer from the above-mentioned luminescent material enumerated.It is excellent
Luminescent material of the internal illumination spectrum S1 peak wavelength in the range of 450nm~480nm is selected, and makes resonator output spectrum
Peak wavelength of the S2 peak wavelength relative to internal illumination spectrum S1 is located at long wavelength side.And then, on internal illumination light
Compose the tilted shape of S1 long wavelength side, preferably regarded with light the short wavelength side of effect function spectrum slope it is reciprocal about into
Ratio.Especially blue (B) in the case of, the rake of internal illumination spectrum S1 long wavelength side drastically changes, and can make altogether
Shake device output spectrum S2 peak wavelength be located at the region jumpy.
As preferred example, as shown in Figure 4 and Figure 5, resonator output spectrum S2 peak wavelength (λ S2) place it is interior
Portion luminescent spectrum S1 luminous intensity variations rate REFor -0.03 [1/nm] below, be preferably -0.05 [1/nm] below.Fig. 4 is pair
Above-mentioned luminous intensity variations rate R when peak wavelength λ S2 are 470nm (design load)EWith the rate of change of brightness RL when thickness changes
The result that the relation of (%) is calculated.When Fig. 5 is that the thickness of such as luminescent layer 33 is fluctuated near design load, front is calculated bright
Spend the result of change.In example shown in Fig. 5, rate of change R in Fig. 4 drawing point is illustratedEFor -0.017 [1/nm], -0.034
Result of calculation when [1/nm], -0.054 [1/nm].
The rate of change R of above-mentioned luminous intensityEIt is by the inside hair at resonator output spectrum S2 peak wavelength (λ S2) place
What the luminous intensity at light spectrum S1 gradient divided by wavelength (λ S2) place was obtained, according to RE[1/nm]=[dE (λ S2)/d λ]/E (λ
S2 formula) is tried to achieve.In addition, rate of change of brightness RL (%) is, when the optimum film thickness that order meets NTSC excitations is d0, in thickness
Rate of change of brightness in the range of deviation d0 ± 2nm.Specifically, being according to rate of change of brightness RL [%]=[in the range of d0 ± 2nm
Maximum~minimum difference of brightness]/the value tried to achieve of [brightness during d0] × 100.As shown in Figure 4 and Figure 5, the luminous member of blue (B)
Luminous intensity variations rate R in partEIt is preferred that start produce luminance fluctuation inhibition -0.03 [1/nm] below, it is more excellent
Be selected in can compared with high inhibition luminance fluctuation -0.05 [1/nm] below.
In the present embodiment, although the internal illumination spectrum at preferred resonator output spectrum S2 peak wavelength λ S2
The rate of change R of S1 luminous intensityEAbove-mentioned condition is met, but except making rate of change REMeet outside above-mentioned condition, or be used as change
Rate REThe condition of replacement of above-mentioned condition is met, the condition met shown in Fig. 6 can also be set.That is, resonator output spectrum is set
S2 peak wavelength λ S2 are located at, internally with internal illumination spectrum S1's on the rake of luminescent spectrum S1 long wavelength side
(90~λ of λ between the corresponding wavelength of 90%~50% scope (scope shown in solid in Fig. 6) of the maximum of luminous intensity
50)。
, such as, can also be in order to meet above-mentioned various conditions, however it is not limited to be adjusted by selecting luminescent material
Resonator output spectrum S2 peak wavelength (desired value) is adjusted in the permissible range of excitation to meet above-mentioned relation.It can pass through
The thickness (design load) of organic layer 3 is adjusted to adjust resonator output spectrum S2 peak wavelength (desired value).It can also pass through
Select luminescent material and adjust thickness (design load) these two aspects of organic layer 3 to meet above-mentioned condition.
In resonator structure, can carry out excitation has the design in larger leeway.On the other hand, it is blue (B) and red
(R) brightness of light-emitting component can produce the brightness change beyond permissible range because of resonator output spectrum S2 peak wavelength shift
It is dynamic.For example, thickness (equivalent to optical path length) corresponding with distance between mirrors is if change 5nm or so (5% of whole element thickness
Left and right), peak wavelength also changes 5nm or so.For blue light emitting device, when the design load of peak wavelength is 470nm, thickness
If increasing 5nm, the luminous efficiency of the peak wavelength (being, for example, 475nm) after skew changes up to more than 20%, therefore causes big
Brightness change and image quality decline (brightness disproportionation).
That is, it is resonator output spectrum S2 peak value due to causing positive direction image quality to decline (brightness disproportionation)
Wavelength shift and light regard the relation of effect function spectrum, therefore, in the present embodiment, make resonator output spectrum S2 peak value ripple
Long internally positioned luminescent spectrum S1 peak wavelength and light regard effect function peak wavelength (that is, 555nm under photopic vision standard) it
Between.Thus, resonator output spectrum S2 peak wavelength (λ S2) is being caused to be offset to high luminous efficiency side because of mismachining tolerance
When, light output reduce, on the contrary, peak wavelength (λ S2) to low luminous efficiency side offset when, light output increase, so as to
Suppress the luminance fluctuation of positive direction.Calculate and find, resonator output spectrum S2 peak wavelength (λ in the case of blue (B)
When S2) being offset in the range of ± 2nm, the luminance fluctuation of positive direction is within substantially ± 5%.
Light-emitting component shown in Fig. 1 constitutes the first and second reflection parts by reflecting electrode and semi-permeable electrode, but not
It is limited to this, the reflectance coating with electrode independence can also be formed.Now, the anode and negative electrode in the element side of the reflectance coating can be with
It is transparency electrode.
(second embodiment)
Present embodiment is the variation of first embodiment, is to replace blue (B) luminous member with red (R) light-emitting component
Part as object embodiment.
That is, red (R) light-emitting component in the case of, as shown in fig. 7, being located at resonator output spectrum S2 peak wavelength
Internal illumination spectrum S1 peak wavelength (λ S1) and light is regarded between the peak wavelength (that is, 555nm) of effect function spectrum.
As described above, in the case of structure shown in Fig. 1, it has been determined that the stacking thickness (design load) of organic layer 3, so that right
It is optimal resonator optical path length in red (R), thus also determines resonator output spectrum S2 peak wavelength (desired value).
For example, the peak wavelength (desired value) when resonator optical path length (design load) is 300nm is 620nm.In addition, light regards effect function
The peak wavelength of spectrum is 555nm under photopic vision standard.Therefore, in the present embodiment, from the above-mentioned luminescent material listed
In select the internal illumination spectrum S1 that above-mentioned position relationship is presented luminescent material, luminescent layer 33 is formed by the luminescent material.It is excellent
Select luminescent material of the internal illumination spectrum S1 peak wavelength in the range of 600nm~640nm, and resonator output spectrum S2
Peak wavelength of the peak wavelength relative to internal illumination spectrum S1 be located at short wavelength side.And then, internal illumination spectrum can be made
The tilted shape of S1 short wavelength side is, with light regard the long wavelength side of effect function spectrum it is inclined it is reciprocal about into than
Example.Especially red (R) in the case of, resonator output spectrum S2 peak wavelength can be located at, internal illumination spectrum S1's
The luminous intensity region jumpy of the rake of the rising of short wavelength side.
It is used as preferred example, according to the reasons why identical with Fig. 4 and Fig. 5 result of calculation, resonator output spectrum S2
Peak wavelength (λ S2) place internal illumination spectrum S1 luminous intensity rate of change REFor more than+0.03 [1/nm], it is preferably
More than+0.05 [1/nm].
Further, in the present embodiment, although the inside hair at preferred resonator output spectrum S2 peak wavelength λ S2
The rate of change R of light spectrum S1 luminous intensityEAbove-mentioned condition is met, but except making rate of change REMeet above-mentioned condition, or conduct
Make rate of change REThe replacement condition of above-mentioned condition is met, the condition met shown in Fig. 8 can also be set.That is, setting resonator is defeated
The peak wavelength λ S2 for going out spectrum S2 are located at, internally on the rake of luminescent spectrum S1 short wavelength side with internal illumination light
Between the corresponding wavelength of 95%~50% scope (Fig. 8 scope shown in solid) of the maximum of spectrum S1 luminous intensity (λ 95~
λ50)。
In addition, it is identical with the situation of blue (B), in order to meet above-mentioned condition, however it is not limited to the selection to luminescent material, than
Resonator output spectrum S2 peak wavelength (desired value) such as or in the permissible range of excitation is adjusted come on meeting
State relation.Resonator output spectrum S2 peak wavelength (target can be adjusted by adjusting the thickness (design load) of organic layer 3
Value).Above-mentioned bar can also be met by selecting luminescent material and adjusting thickness (design load) these two aspects of organic layer 3
Part.
As described above, when using the light-emitting component of red (R) as object, also making resonator output spectrum S2 peak wavelength
Internally positioned luminescent spectrum S1 peak wavelength and light regard effect function spectrum peak wavelength (that is, be under photopic vision standard
Between 555nm), thus, resonator output spectrum S2 peak wavelength (λ S2) is being caused because of fabrication error to high luminous efficiency one
During the skew of side, the output that lights is reduced, and opposite peak wavelength (λ S2) lights when being offset to low luminous efficiency side and exports increase, from
And the luminance fluctuation of positive direction can be suppressed.Found as shown in figure 9, calculating, resonator output spectrum S2 in the case of red (R)
Peak wavelength when being offset in the range of ± 2nm, the luminance fluctuation of positive direction is within ± 5%.
(the 3rd embodiment)
In the first embodiment using blue (B) light-emitting component as object, lighted in this second embodiment with red (R)
Element is object.But, the display device formed by multiple RGB light-emitting components can have institute in the first and second embodiments
The blueness (B) of explanation and red (R) both light-emitting components, can suppress both blue (B) and red (R) luminance fluctuation.
(the 4th embodiment)
In the first~the 3rd embodiment, RGB resonator light paths are adjusted to the thickness by changing hole injection layer 31
The example of length is illustrated.But be not restricted to that this, can also be as shown in Figure 10, adjusted by the thickness for changing luminescent layer 33
Whole RGB resonators optical path length.
(the 5th embodiment)
In the first~the 4th embodiment, it is illustrated by taking the light-emitting component of top lighting structure as an example.But simultaneously
It is not limited to this structure or bottom-emission structure as shown in figure 11.In example shown in Figure 11, by making Fig. 1's
Reflecting electrode 21 is semi-permeable electrode, and it is reflecting electrode to make negative electrode 4, and as bottom-emission structure.But the present invention is not limited
Due to the structure shown in Figure 11.
(the 6th embodiment)
Below, the example for manufacturing the process of the RGB light-emitting components shown in Fig. 1 is illustrated.
First, with evaporation or sputtering method etc. sequentially form reflecting electrode 21, transparency electrode 22 film.Can be flat by photograph
Version printing art forms the pattern of above-mentioned electrode 21,22.Then, fluorine-containing photoresist is coated with substrate 1, is dried and film forming
Afterwards, for example, by wall part 5 of the photolithography formation with pattern as shown in Figure 1.In the case of for passive-type,
Electrode 21,22 is formed as after striated, wall part 5 is formed.On the other hand, for it is active in the case of, by electrode 21,22
Be formed as the island being connected with each drive circuit, then form wall part 5.
Then, the area separated with the fluent material of hole injection layer 32 is coated on such as inkjet nozzle by wall part 5
In domain, dry and film forming.Similarly each element is respectively coated using rubbing method for hole input layer 32, luminescent layer 33,
And film forming.Thickness can be adjusted by adjusting the coating weight of such as fluent material.Then, electron transport is sequentially formed with vapour deposition method
Layer 34 and negative electrode 4.The masks such as metal mask can be used, or using the dykes and dams shape of wall part 5, to the formation pattern of negative electrode 4.Example
Such as in the case of for passive-type, the pattern of negative electrode 4 can be formed as striated.On the other hand, for it is active in the case of,
Pattern can not be formed, and becomes bucking electrode.By above-mentioned operation, the luminous members of RGB shown in Fig. 1 and Fig. 2 can be manufactured
Part.
As described above, according to the first~the 6th embodiment, in the light-emitting component with resonator structure, by making altogether
Shake device output spectrum the internally positioned luminescent spectrum of peak wavelength peak wavelength and light regard effect function spectrum peak wavelength it
Between, the luminance fluctuation caused by resonator optical path length is uneven can be suppressed.In other words, even if thickness off-design value, due to
Luminance fluctuation is small, and can tolerate that thickness is uneven to a certain extent, thus can improve productivity ratio and reduce cost.
Technology described in above-mentioned embodiment is applied also for layer except can be applied to organic film light-emitting component
The inorganic thin film light-emitting component (electroluminescence, Light-Emitting Diode) of folded component structure.In addition, can be applied on surface with rectangular
Configure the light emitting display of light-emitting component.Can also be that luminous structure is transmitted from the side of the first and second reflection part two.
Further, the present invention is not limited to the colors of RGB tri-, can also include a kind of color or two kinds of colors, or other colors.
More than, the present invention is described in detail with reference to specific embodiment, but in the spirit for not departing from the present invention
In the range of claim, various replacements, deformation can be carried out to mode and details and is changed, this is for this area one
As knowledge those skilled in the art for be self-evident.Therefore, protection scope of the present invention is not limited to above-mentioned reality
Apply the record of mode and accompanying drawing, and should be determined according to the record of claims and its equivalent embodiment.
Claims (1)
1. a kind of light-emitting component, it is characterised in that：
With resonator structure, the resonator structure includes the first reflection part, the second reflection part and organic layer,
The organic layer is coated in the region separated by wall part,
A part for the light resonated between first reflection part and second reflection part is anti-through described first
Penetrate part or second reflection part passed through,
The resonator output spectrum of the resonator structure reaches the wavelength of maximum, positioned at the internal illumination light of the organic layer
Spectrum reaches that the wavelength and light of maximum are regarded and imitates function and reach between the wavelength of maximum,
The resonator output spectrum reaches the rate of change R of the luminous intensity of the internal illumination spectrum at the wavelength of maximumE
Below -0.03,
The internal illumination spectrum reaches the wavelength of maximum in the range of 450nm~480nm, the resonator output spectrum
Reach that the wavelength of maximum reaches that the wavelength of maximum is located at long wavelength side relative to the internal illumination spectrum.
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| CN201510015416.5A CN104681699B (en) | 2009-06-11 | 2009-06-11 | Light-emitting component and display device |
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