CN115464549A - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing method Download PDFInfo
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- CN115464549A CN115464549A CN202110652776.1A CN202110652776A CN115464549A CN 115464549 A CN115464549 A CN 115464549A CN 202110652776 A CN202110652776 A CN 202110652776A CN 115464549 A CN115464549 A CN 115464549A
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- 238000005498 polishing Methods 0.000 title claims abstract description 52
- 239000000126 substance Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000002834 transmittance Methods 0.000 claims abstract description 28
- 238000001259 photo etching Methods 0.000 claims abstract description 11
- 238000001514 detection method Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 239000000696 magnetic material Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 2
- 238000001028 reflection method Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
The invention provides a chemical mechanical polishing method, which comprises the following steps: obtaining the photoetching light transmittance TR of a photomask used for forming the groove so as to obtain the pattern density PD of the dielectric layer; obtaining a rough grinding end point predicted value K of a first grinding stage of chemical mechanical grinding based on the photoetching transmittance TR of the photomask; setting a rough grinding end value of a first grinding stage in a menu of a chemical mechanical grinding machine according to the end point predicted value K, and grinding; roughly grinding to a set value, terminating the first grinding stage, and starting the second grinding stage. The chemical mechanical polishing method can simplify the step of searching the rough grinding end point of the first polishing stage of the sample conductive removal layer, shorten the searching time, reduce the trial-run risk and improve the yield problem caused by the pattern density PD difference of the dielectric layer.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuit manufacturing, and relates to a chemical mechanical polishing method.
Background
Over the past few decades, integrated circuit technology has evolved rapidly, with the initial single transistor being invented, to the now highly concentrated integrated circuits. As the integration level of the integrated circuit is increased, the requirement on the manufacturing process of the integrated circuit is higher and higher, and the requirement on the flatness of the wafer is higher and higher. The fabrication of highly integrated circuits often uses a Chemical Mechanical Polishing (CMP) process to planarize the wafer while removing unwanted material layers. The chemical mechanical polishing process can be generally divided into two stages, wherein the first stage performs rough polishing of the wafer, and a certain reasonable thickness (safe thickness) is left after the rough polishing, so that the fine polishing of the wafer can be performed conveniently in the second stage.
In the cmp process, too much or too little material removal may result in device degradation and even failure, and thus the accuracy of the endpoint detection technique determines the yield of the semiconductor device. The method for detecting the chemical mechanical polishing endpoint mainly comprises a time control method, a driving motor current detection method, a friction force detection method, a torque detection method, a chemical component detection method, an optical endpoint detection method, a sound endpoint detection method, an eddy current endpoint detection method and the like, wherein one or more appropriate endpoint detection methods are selected according to actual needs.
At present, an eddy current end point detection method and a light end point detection method are usually adopted for removing a metal layer, the eddy current end point detection method is used for rough grinding in the first grinding stage of chemical mechanical grinding, an eddy current (eddy current) signal is generated through a metal cutting force line to reflect the thickness of the metal layer on the surface of a wafer, and the rough grinding is stopped when the safe thickness is reached; the fine polishing in the second polishing stage of the chemical mechanical polishing uses optical endpoint detection to confirm the endpoint by detecting the change of the reflectivity of different films (the reflectivity of the metal layer is different from that of the dielectric layer).
The metal pattern densities of the same batch of products and different batches of products are different, and the influence of the metal in the channel on the cutting of the magnetic force lines is also different, so that the rough grinding end point of the first grinding stage detected by using the eddy current end point detection method is also different, and the influence of the metal in the channel on the cutting of the magnetic force lines is not considered. Aiming at searching for the rough grinding end point in the first grinding stage, in the prior art, trial work is usually carried out for a plurality of small stages, and then the safe thickness of a product is searched for, but the thickness of a removal layer is different due to different pattern densities of products in the same batch, and when the rough grinding end point in the first grinding stage which is tried to be searched for is used for grinding a wafer, the fine grinding optical end point in the second grinding stage is searched for inaccurately, so that grinding failure occurs; if the grinding fails, the proper adjustment is required by the engineer, which seriously increases the burden of the engineer. In addition, the step of searching the rough grinding end point of the first grinding stage by applying the method is complicated and takes long time, and the yield of the same batch of wafers is greatly influenced by the difference of the pattern density; meanwhile, for replacing different batches of products, due to the change of the pattern density, trial work needs to be performed again before production, a large amount of time needs to be consumed to find the rough grinding end point of the first grinding stage, the trial work risk of the method is high, and the mass production of the products is seriously influenced. Therefore, it is highly desirable to find a rough grinding end point detection method in the first grinding stage that is efficient, simple in the step of finding the rough grinding end point in the first grinding stage, and capable of reducing the influence of the density difference of the dielectric layer patterns on the product yield and having a low trial run risk.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a chemical mechanical polishing method for solving the problems of the prior art that the step of finding the first polishing endpoint is complicated and takes a long time, the yield of the same batch of products is greatly affected by the pattern density difference of the dielectric layer, and the trial run risk of finding the rough polishing endpoint in the first polishing stage is large.
To achieve the above and other related objects, the present invention provides a chemical mechanical polishing method, comprising:
providing a structure to be ground, wherein the structure to be ground comprises a medium layer and a conductive removal layer positioned on the medium layer, a groove is formed in the medium layer, and a conductive filling part connected with the bottom of the conductive removal layer is filled in the groove;
obtaining the photoetching light transmittance TR of a photomask used for forming the groove so as to obtain the pattern density PD of the dielectric layer;
obtaining an end point predicted value K of the first grinding stage of the chemical mechanical grinding based on the photoetching light transmittance TR of the photomask or the pattern density PD of the dielectric layer;
setting the end point value of the first grinding stage in a menu of a chemical mechanical grinding machine according to the rough grinding end point predicted value K, and performing rough grinding in the first grinding stage;
and when the first grinding stage reaches a set value, stopping coarse grinding in the first grinding stage and starting fine grinding in the second grinding stage.
Optionally, the relationship between the pattern density PD of the dielectric layer and the lithography transmittance TR of the photomask plate is PD =1-TR.
Optionally, the rough grinding endpoint predicted value K is calculated according to a correlation curve formula K = a × TR + B, where a is a slope and B is a longitudinal intercept.
Optionally, based on a trial sample, the pattern density PD of the dielectric layer is changed by changing the lithography transmittance TR of the photomask to obtain a plurality of rough grinding end point values corresponding to the pattern densities PD of different dielectric layers, to obtain a plurality of discrete rough grinding end point values, to obtain a fitting curve based on a preset curve fitting model, and to obtain the correlation curve formula.
Optionally, the rough grinding end point set value of the first grinding stage is equal to the rough grinding end point predicted value K of the first grinding stage.
Optionally, after the first polishing stage is finished, an optical end point detection method is used to obtain an end point of the second polishing stage.
Optionally, the optical endpoint detection method comprises at least one of an optical interference method, a light reflection method and a spectral reflectance method.
Optionally, the conductive removal layer and the conductive filling portion are made of one of metal, metal oxide and metal nitride.
Optionally, the conductive removal layer and the conductive filling portion are made of the same material, and the material type of the conductive removal layer includes at least one of a magnetic material and a non-magnetic material.
As described above, according to the chemical mechanical polishing method of the present invention, the lithography transmittance TR of the photomask for forming the trench in the dielectric layer is obtained before the chemical mechanical polishing, the pattern density PD of the dielectric layer is obtained according to the lithography transmittance TR, then the predicted value K of the rough grinding endpoint in the first polishing stage is obtained by using the correlation between the lithography transmittance TR of the photomask and the rough grinding endpoint in the first polishing stage, and the set value in the first polishing stage is set according to the predicted value K; the method simplifies the step of searching the rough grinding end point of the first grinding stage of the wafer conductive removal layer, shortens the time of searching the rough grinding end point of the first grinding stage of the product conductive removal layer, improves the yield problem caused by the pattern density difference of the products in the same batch, and reduces the trial-run risk when the products in different batches are replaced; meanwhile, the invention also realizes the stable and large-batch production of products with different pattern densities, and has high industrial utilization value.
Drawings
FIG. 1 is a flow chart illustrating a chemical mechanical polishing method according to the present invention.
Fig. 2 is a diagram showing the rough grinding end point position of the first grinding stage corresponding to the conductive removal layer when the dielectric layer pattern density PD is 100% according to the present invention.
Fig. 3 is a diagram showing the rough grinding end point position of the first grinding stage corresponding to the conductive removal layer when the dielectric layer pattern density PD is 70% according to the present invention.
Fig. 4 is a diagram illustrating the rough grinding endpoint position of the first grinding stage corresponding to the conductive removal layer when the dielectric layer pattern density PD is 40% according to the present invention.
FIG. 5 is a graph showing a linear fit of a correlation curve between the lithography transmittance TR of the photomask of the present invention and the rough grinding endpoint value of the first grinding stage.
Description of the element reference numerals
1. Conductive removal layer
11. Conductive filling part
2. Dielectric layer
21. Groove
3. End point position of rough grinding
S1 to S5
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 5. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
In one embodiment, a chemical mechanical polishing method is provided, referring to fig. 1, which is a schematic flow chart of the method, including the steps of:
s1: providing a structure to be ground, wherein the structure to be ground comprises a medium layer and a conductive removal layer positioned on the medium layer, a groove is formed in the medium layer, and a conductive filling part connected with the bottom of the conductive removal layer is filled in the groove;
s2: obtaining the photoetching light transmittance TR of a photomask used for forming the groove so as to obtain the pattern density PD of the dielectric layer;
s3: obtaining a rough grinding end point predicted value K of a first grinding stage of chemical mechanical grinding based on the photoetching transmittance TR of the photomask;
s4: setting the end point value of the first grinding stage in a menu of a chemical mechanical grinding machine according to the rough grinding end point predicted value K, and performing rough grinding in the first grinding stage;
s5: and when the first grinding stage reaches a set value, stopping coarse grinding in the first grinding stage and starting fine grinding in the second grinding stage.
By way of example, the pattern density PD of the dielectric layer is related to the lithographic transmittance TR of the photomask plate by PD =1-TR. In this embodiment, a corresponding photomask is manufactured according to a circuit pattern designed as required, then the density of the trench in the dielectric layer is obtained by using the lithography transmittance TR of the photomask, the density of the trench is equal to the lithography transmittance TR of the photomask, and the pattern density PD of the dielectric layer is directly obtained according to the density of the trench.
Specifically, referring to fig. 2 to 4, which are graphs showing rough grinding end point positions (safe thickness lines) of a first grinding stage corresponding to conductive removal layers when the pattern densities PD of the dielectric layers are 100%, 70% and 40%, respectively, it can be seen that, as the pattern densities PD of the dielectric layers 2 decrease, the amount of metal participating in electromagnetic induction of the conductive filling portions 11 in the trenches 21 increases relatively, the rough grinding end point position 3 of the first grinding stage also moves downward, and the thickness of the conductive removal layer 1 removed in the first grinding stage is larger. In this embodiment, the metal selected for the conductive removal layer 1 includes copper metal.
As an example, the rough grinding end point predicted value K is calculated according to a correlation curve formula K = a × TR + B, where a is a slope and B is a longitudinal intercept. In this embodiment, the lithography transmittance TR of the photomask is substituted into the correlation formula to obtain the rough grinding end point predicted value K of the first grinding stage in the chemical mechanical grinding, and the rough grinding end point value of the first grinding stage is set in the menu of the chemical mechanical grinding machine according to the obtained predicted value; when the metal conductive removal layer 1 is a copper metal layer, A =6.0193, B =422.74, namely the correlation formula is K =6.0193TR +422.74, and a correlation coefficient R ^2=0.944, wherein the correlation coefficient R ^2 represents the linear correlation degree between the light transmittance TR of the photomask and the rough grinding end point value in the first grinding stage, and is calculated by using an integration difference method, and the closer to the value 1, the stronger the linear correlation degree between the R ^2 and the rough grinding end point value is.
As an example, please refer to fig. 5, which shows a linear fitting curve of a correlation curve between the lithography transmittance TR of the photomask and the rough grinding endpoint value in the first grinding stage, based on a trial sample, the pattern density PD of the dielectric layer in the dielectric layer 2 is changed by changing the lithography transmittance TR of the photomask, a plurality of rough grinding endpoint values corresponding to the pattern densities PD of different dielectric layers are obtained, a plurality of discrete rough grinding endpoint values are obtained, a fitting curve is obtained based on a preset curve fitting model, and a correlation curve formula is obtained. In this embodiment, before the trench 21 is etched, the pattern of the photomask is changed, that is, the lithographic transmittance TR of the photomask is changed, and meanwhile, the pattern density PD of the dielectric layer in the dielectric layer 2 is correspondingly changed, so as to try multiple groups of samples to be ground, and obtain a plurality of discrete rough grinding end point values corresponding to the lithographic transmittance TR of the photomask.
As an example, the rough grinding end point set value of the first grinding stage is equal to the rough grinding end point predicted value K of the first grinding stage. In this embodiment, after the rough grinding end point value of the first grinding stage is set, the rough grinding in the first grinding stage is started until the rough grinding end point set value of the first grinding stage is reached, the first grinding stage is stopped, and then the fine grinding in the second grinding stage is started. Starting the fine grinding, starting an optical end point detection system to judge the end point value of the fine grinding at the same time, and stopping the grinding in the second grinding stage until the end point of the fine grinding is reached.
For example, after the first polishing stage is finished, the end point of the second polishing stage is obtained by using an optical end point detection method. In this embodiment, the fine polishing in the second polishing stage is completed, the conductive removal layer 1 is removed, and the chemical mechanical polishing is completed.
The optical endpoint detection method includes at least one of optical interference, optical reflection, and spectral reflectance, and may be other suitable endpoint detection methods.
The material of the conductive removal layer 1 and the conductive filling portion 11 includes one of metal, metal oxide, and metal nitride, for example, but may be other suitable materials.
Specifically, the metal species of the conductive removal layer 1 and the conductive filling portion 11 include one of aluminum, tungsten, copper, and tin, and may be other suitable metals.
As an example, the conductive removal layer 1 and the conductive filling portion 11 are made of the same material, and the material type of the conductive removal layer 1 includes at least one of a magnetic material and a non-magnetic material.
In the chemical mechanical polishing method in this embodiment, a predicted value K of a rough polishing end point in the first polishing stage is obtained according to a correlation relationship between the pattern density PD of the dielectric layer, the lithography transmittance TR of the photomask plate, and the rough polishing end point value in the first polishing stage, a set value of the rough polishing end point in the first polishing stage is set according to the predicted value K, rough polishing is performed until the rough polishing end point, and finally, fine polishing is performed. The method shortens the time for searching the rough grinding end point value of the first grinding stage during trial operation, simplifies the step of searching the rough grinding end point of the product, reduces the risk of trial operation and improves the production yield of the product.
In summary, in the chemical mechanical polishing method of the present invention, the predicted value K of the rough grinding end point in the first grinding stage is obtained by the correlation between the lithographic transmittance TR of the photomask plate for forming the trench in the dielectric layer and the rough grinding end point in the first grinding stage, and is set as the rough grinding end point set value in the first grinding stage, and finally, after the rough grinding is finished, the fine grinding end point in the second grinding stage is obtained by using the optical end point detection method. According to the method, the predicted value of the rough grinding end point value in the first grinding stage is quickly predicted by utilizing the correlation relationship between the photoetching light transmittance TR of the photomask and the rough grinding end point value in the first grinding stage, and the rough grinding end point value in the first grinding stage is set according to the predicted value, so that the step of searching the rough grinding end point value in the first grinding stage of the sample conductive removal layer is simplified, the time for searching the rough grinding end point value in the first grinding stage of the sample conductive removal layer is shortened, the yield problem caused by the difference of the pattern densities of the dielectric layers of the products in the same batch is improved, and the trial operation risk when the products in different batches are replaced is reduced; meanwhile, the invention also realizes the stable and large-batch production of products with different pattern densities. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. A chemical mechanical polishing method is characterized by comprising the following steps:
providing a structure to be ground, wherein the structure to be ground comprises a medium layer and a conductive removal layer positioned on the medium layer, a groove is formed in the medium layer, and a conductive filling part connected with the bottom of the conductive removal layer is filled in the groove;
obtaining the photoetching light transmittance TR of a photomask used for forming the groove so as to obtain the pattern density PD of the dielectric layer;
obtaining a rough grinding endpoint predicted value K of a first grinding stage of chemical mechanical grinding based on the photoetching transmittance TR of the photomask or the pattern density PD of the dielectric layer;
setting the end point value of the first grinding stage in a menu of a chemical mechanical grinding machine according to the rough grinding end point predicted value K, and performing rough grinding in the first grinding stage;
and when the first grinding stage reaches a set value, stopping coarse grinding in the first grinding stage and starting fine grinding in the second grinding stage.
2. The method of claim 1, wherein the step of detecting the end point of the CMP rough polishing process comprises: the relation between the pattern density PD of the dielectric layer and the photoetching transmittance TR of the photomask is PD =1-TR.
3. The chemical mechanical polishing method of claim 1, wherein: and calculating the rough grinding end point predicted value K according to a correlation curve formula K = A × TR + B, wherein A is a slope, and B is a longitudinal intercept.
4. A chemical mechanical polishing method according to claim 3, wherein: changing the pattern density PD of the medium layer by changing the photoetching light transmittance TR of the photomask plate based on a trial sample, obtaining a plurality of rough grinding end point values corresponding to the pattern densities PD of different medium layers, obtaining a plurality of discrete rough grinding end point values, obtaining a fitting curve based on a preset curve fitting model, and obtaining the correlation curve formula.
5. A chemical mechanical polishing method according to claim 1, wherein: the set value of the rough grinding end point of the first grinding stage is equal to the predicted value K of the rough grinding end point of the first grinding stage.
6. The chemical mechanical polishing method of claim 1, wherein: and after the first grinding stage is finished, obtaining the end point of the second grinding stage by using an optical end point detection method.
7. The chemical mechanical polishing method of claim 6, wherein: the optical endpoint detection method comprises at least one of an optical interference method, a light reflection method and a spectral reflectance method.
8. A chemical mechanical polishing method according to claim 1, wherein: the conductive removing layer and the conductive filling part are made of one of metal, metal oxide and metal nitride.
9. A chemical mechanical polishing method according to claim 1, wherein: the conductive removal layer and the conductive filling part are made of the same material, and the material type of the conductive removal layer comprises at least one of a magnetic material and a non-magnetic material.
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