CN115464543B - Polishing method for spliced high-purity aluminum pipe target - Google Patents
Polishing method for spliced high-purity aluminum pipe target Download PDFInfo
- Publication number
- CN115464543B CN115464543B CN202211294094.9A CN202211294094A CN115464543B CN 115464543 B CN115464543 B CN 115464543B CN 202211294094 A CN202211294094 A CN 202211294094A CN 115464543 B CN115464543 B CN 115464543B
- Authority
- CN
- China
- Prior art keywords
- purity aluminum
- target
- treatment
- sand paper
- aluminum pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 149
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 238000000034 method Methods 0.000 title claims abstract description 81
- 238000005498 polishing Methods 0.000 title claims abstract description 53
- 244000137852 Petrea volubilis Species 0.000 claims abstract description 77
- 238000009991 scouring Methods 0.000 claims abstract description 38
- 229910052738 indium Inorganic materials 0.000 claims abstract description 25
- 229910000679 solder Inorganic materials 0.000 claims abstract description 25
- 230000003746 surface roughness Effects 0.000 claims abstract description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010963 304 stainless steel Substances 0.000 claims abstract description 13
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 claims abstract description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 238000007790 scraping Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 5
- 238000012797 qualification Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
- B24B29/06—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces for elongated workpieces having uniform cross-section in one main direction
- B24B29/08—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces for elongated workpieces having uniform cross-section in one main direction the cross-section being circular, e.g. tubes, wires, needles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a polishing method of a spliced high-purity aluminum pipe target, which comprises the steps of sequentially carrying out first sand paper treatment, second sand paper treatment and scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain the polished spliced high-purity aluminum pipe target; the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is more than or equal to 99.9wt%. The polishing method disclosed by the invention is simple to operate, the surface roughness of the polished spliced high-purity aluminum pipe target meets the requirements, the grains are consistent, the sputtering use requirement of the aluminum pipe target is met, and the method has a large-scale industrialized popularization and application prospect.
Description
Technical Field
The invention relates to the technical field of semiconductor tube targets, in particular to a polishing method of a spliced high-purity aluminum tube target.
Background
The spliced high-purity aluminum tube target for the semiconductor is divided into two parts, the inner lining tube is made of stainless steel, and the outer tube is made of sectional high-purity aluminum. The inner tube and the outer tube are welded and combined through brazing, so that the inner tube and the outer tube can be normally used in a client sputtering machine. The sectional type high-purity aluminum is divided into 5 sections or more sections during welding, and after each section is polished, the required roughness is achieved, and the color and luster of each section of spliced target material are ensured to be consistent with the texture. However, the aluminum tube target inevitably causes local micro damage to the surface of the product during the extrusion and welding processes, and the welding process is easy to be contaminated by solder and oxide. Local minor damage, if not removed, can cause abnormal discharge during sputtering of the product.
CN104032275a discloses a spliced rotary target and a method of forming the same. The spliced rotary target comprises an inner tube, a target blank coaxial with the inner tube and a joint layer arranged between the inner tube and the target blank, wherein the target blank consists of at least two target blank sections, and a splicing surface is arranged at a joint between the two target blank sections. By changing the shape of the splicing part, the influence accumulated by the splicing joint in time is dispersed to a larger area, and the film quality difference of the splicing part is reduced, so that the possibility of poor occurrence of devices is reduced, and the product qualification rate is improved. But does not disclose a polishing method of the spliced rotary target.
CN113084674a discloses an automatic polishing process method for aluminum-containing targets, which comprises the following steps: and (3) automatically polishing the sputtering surface of the aluminum-containing target by adopting automatic polishing equipment, wherein the automatic polishing process comprises four polishing procedures, and the granularity of an abrasive belt used for polishing is sequentially decreased to obtain the polished aluminum-containing target. According to the process method, according to the selection of target materials, abrasive belts with different types are adopted to automatically polish the target sputtering surface, the granularity of the abrasive belts is sequentially reduced, and the controllability of the roughness of the sputtering surface after polishing is ensured through the control of polishing process parameters, so that the roughness of the aluminum-containing target sputtering surface can reach 0.2-0.7 mu m, and the subsequent use requirement is met; the polishing process is automatically carried out, the stability is good, the manual operation is reduced, the production efficiency is improved, and the qualification rate of target production can be improved.
CN112809455a discloses a polishing method for tungsten silicon target and its sputtering surface, the polishing method comprises a first water mill polishing, a second water mill polishing and a third water mill polishing which are carried out reciprocally; the round trip times are 15-25 times; the running speeds of the targets polished by the first water mill, the second water mill and the third water mill are respectively and independently 0.1-0.3 m/s, and are respectively and independently carried out by adopting water mill abrasive belts; the rotating speed of the water grinding abrasive belt is 10-30 r/min, and the specification comprises a 600# white corundum abrasive belt or a 800# white corundum abrasive belt; the first water mill polishing, the second water mill polishing and the third water mill polishing are respectively and independently accompanied with cooling water to wash the sputtering surface of the target; the flushing rate of the cooling water is 600-800 mL/min, and the temperature is 5-25 ℃. The polishing method greatly reduces the roughness of the sputtering surface of the target, avoids cracking of the target, reduces the production cost and is easy to popularize and apply.
At present, no method for effectively polishing and grinding spliced aluminum targets and completely consistent color and luster lines after treatment exists.
Therefore, the development of the polishing method for the spliced high-purity aluminum pipe target, which can enable the surface roughness of the polished spliced pipe target to meet the requirements and have consistent lines, thereby guaranteeing the surface quality of the product, has important significance.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a polishing method for a spliced high-purity aluminum pipe target, which sequentially adopts specific sand paper and scouring pad to polish the spliced high-purity aluminum pipe target, so that the surface roughness of the polished target meets the requirements and the texture is consistent, thereby achieving the purposes of ensuring the surface quality of products and improving the qualification rate of the products.
To achieve the purpose, the invention adopts the following technical scheme:
the invention provides a polishing method of a spliced high-purity aluminum pipe target, which comprises the steps of sequentially carrying out first sand paper treatment, second sand paper treatment and scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain the polished spliced high-purity aluminum pipe target;
the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is more than or equal to 99.9wt%.
According to the polishing method of the spliced high-purity aluminum pipe target, the spliced high-purity aluminum pipe target sequentially comprising the 304 stainless steel inner pipe, the indium welding material layer and the high-purity aluminum pipe from inside to outside is subjected to first sand paper treatment, second sand paper treatment and scouring pad treatment in sequence, so that the surface roughness of the spliced high-purity aluminum pipe target after polishing meets the requirements, the lines are consistent, and the sputtering use requirements of the aluminum pipe target are met. The polishing method is simple to operate and suitable for large-scale popularization and application.
Preferably, the spliced high-purity aluminum pipe target is scraped off indium solder remained on the surface and fixed on a lathe before being subjected to first sand paper treatment.
According to the invention, the spliced high-purity aluminum pipe target is preferably subjected to first sand paper treatment, and the indium solder remained on the surface is scraped off to prevent the rough pipe wall of the aluminum pipe target caused by excessive indium solder in the polishing process, so that the finally polished product cannot meet the sputtering use requirement.
According to the invention, a scraper knife and a white steel knife are sequentially adopted to scrape residual indium solder on the surface of the spliced high-purity aluminum tube target.
The fixing method comprises the steps that one end of a spliced high-purity aluminum pipe target is fastened and clamped by using a three-jaw chuck, and the other end of the spliced high-purity aluminum pipe target is fastened by using a conical ejector pin in a propping mode.
Preferably, the first sandpaper treatment is performed using # 180 sandpaper.
Preferably, the # 180 sandpaper comprises # 180 alumina sandpaper.
Preferably, the rotational speed of the lathe during the first sand paper treatment is 400-600 r/min, for example, 400r/min, 450r/min, 480r/min, 500r/min, 550r/min or 600r/min, etc., but the present invention is not limited to the listed values, and other non-listed values within the range of values are equally applicable.
In the invention, the rotating speed of the lathe is preferably 400-600 r/min in the process of treating the first abrasive paper, and is lower than the lower rotating speed limit, the polishing roughness cannot meet the requirement, and the pipe target is easy to bend if the polishing roughness is higher than the upper rotating speed limit.
Preferably, the first sandpaper treatment is repeated 2 to 3 times, for example, 2 times or 3 times.
The surface roughness Ra of the spliced high-purity aluminum pipe target after the first sandpaper treatment is preferably 1 to 3 μm, and may be, for example, 1 μm, 1.2 μm, 1.5 μm, 2 μm, 2.5 μm, or 3 μm, etc., but is not limited to the listed values, and other non-listed values within the range of values are equally applicable.
Preferably, the second sandpaper treatment is performed using 320# sandpaper.
Preferably, the 320# abrasive paper comprises 320# aluminum oxide abrasive paper.
According to the invention, the first abrasive paper treatment adopts the No. 180 alumina abrasive paper, and the second abrasive paper treatment adopts the No. 320 alumina abrasive paper, so that the gradient transition advantage is realized, and the surface of the pipe body is not easy to scratch. If 320# alumina sand paper is used for the first sand paper treatment, the polishing efficiency is low, and coarse marks are not easy to throw off.
The rotation speed of the lathe during the second sand paper treatment is preferably 400r/min or less, and may be 400r/min, 350r/min, 330r/min, 300r/min, 200r/min, 100r/min, or the like, for example, but is not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The rotation speed of the lathe in the process of processing the second sand paper is preferably below 400r/min, so that the obtained polished spliced high-purity aluminum pipe target is consistent in texture, and the sputtering use requirement of the aluminum pipe target is met.
Preferably, the second sandpaper treatment is repeated more than 3 times, for example, 3 times, 4 times, 5 times, or 6 times.
Preferably, the scouring pad treatment is performed using a # 180 scouring pad.
The rotation speed of the lathe during the scouring pad treatment is preferably 400r/min or less, and may be 400r/min, 350r/min, 330r/min, 300r/min, 200r/min, 100r/min, or the like, for example, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The rotating speed of the lathe in the process of processing the scouring pad is preferably below 400r/min, so that the obtained polished spliced high-purity aluminum pipe target is ensured to have consistent grains, and the sputtering use requirement of the aluminum pipe target is met.
The surface roughness Ra of the polished high-purity aluminum pipe target is preferably 0.8 μm or less, and may be, for example, 0.8 μm, 0.7 μm, 0.6 μm, 0.5 μm, 0.2 μm, or 0.1 μm, etc., but is not limited to the above-mentioned values, and other values not shown in the above-mentioned numerical ranges are equally applicable.
As a preferred technical solution of the present invention, the polishing method includes:
scraping residual indium solder on the surface of the spliced high-purity aluminum tube target, fastening and clamping one end of the spliced high-purity aluminum tube target by using a three-jaw chuck, and supporting and fastening the other end of the spliced high-purity aluminum tube target by using a conical thimble;
sequentially using 180# aluminum oxide sand paper to carry out first sand paper treatment, 320# aluminum oxide sand paper to carry out second sand paper treatment and 180# scouring pad to carry out scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain a polished spliced high-purity aluminum pipe target with the surface roughness Ra less than or equal to 0.8 mu m; the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is more than or equal to 99.9wt%;
the rotating speed of the lathe in the process of treating the first sand paper is 400-600 r/min; repeating the first sand paper treatment for 2-3 times; the surface roughness Ra of the spliced high-purity aluminum pipe target after the first sand paper treatment is 1-3 mu m; the rotating speed of the lathe in the process of processing the second sand paper is below 400r/min; repeating the second sandpaper treatment more than 3 times; the rotating speed of the lathe in the process of the scouring pad treatment is below 400r/min.
Compared with the prior art, the invention has at least the following beneficial effects:
the polishing method of the spliced high-purity aluminum pipe target is simple to operate, the surface roughness Ra of the polished spliced high-purity aluminum pipe target is less than or equal to 0.8 mu m, the grains are consistent, the sputtering use requirement of the aluminum pipe target is met, and the method has a large-scale industrialized popularization and application prospect.
Drawings
FIG. 1 is a schematic structural view of a spliced high-purity aluminum tube target in the present invention.
FIG. 2 is a top view of a spliced high purity aluminum tube target in accordance with the present invention.
In the figure: 1-a high-purity aluminum tube; 2-304 stainless steel inner tube; 3-indium solder layer.
Detailed Description
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings.
The structure schematic diagram of the spliced high-purity aluminum tube target is shown in fig. 1, and the top view is shown in fig. 2.
The spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube 2, an indium solder layer 3 and a high-purity aluminum tube 1 from inside to outside.
The present invention will be described in further detail below. The following examples are merely illustrative of the present invention and are not intended to represent or limit the scope of the invention as defined in the claims.
Example 1
The embodiment provides a polishing method for a spliced high-purity aluminum pipe target, which comprises the following steps:
scraping residual indium solder on the surface of the spliced high-purity aluminum tube target, fastening and clamping one end of the spliced high-purity aluminum tube target by using a three-jaw chuck, and supporting and fastening the other end of the spliced high-purity aluminum tube target by using a conical thimble;
sequentially using 180# aluminum oxide sand paper to carry out first sand paper treatment, 320# aluminum oxide sand paper to carry out second sand paper treatment and 180# scouring pad to carry out scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain a polished spliced high-purity aluminum pipe target; the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is 99.9 weight percent;
the rotating speed of the lathe in the process of processing the first sand paper is 500r/min; the first sandpaper treatment was repeated 2 times; the surface roughness Ra of the spliced high-purity aluminum pipe target after the first sand paper treatment is 1.6 mu m; the rotating speed of the lathe in the process of processing the second sand paper is 400r/min; the second sandpaper treatment was repeated 5 times; the rotating speed of the lathe in the process of the scouring pad treatment is 300r/min.
Example 2
The embodiment provides a polishing method for a spliced high-purity aluminum pipe target, which comprises the following steps:
scraping residual indium solder on the surface of the spliced high-purity aluminum tube target, fastening and clamping one end of the spliced high-purity aluminum tube target by using a three-jaw chuck, and supporting and fastening the other end of the spliced high-purity aluminum tube target by using a conical thimble;
sequentially using 180# aluminum oxide sand paper to carry out first sand paper treatment, 320# aluminum oxide sand paper to carry out second sand paper treatment and 180# scouring pad to carry out scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain a polished spliced high-purity aluminum pipe target; the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is 99.92wt%;
the rotating speed of the lathe in the process of processing the first sand paper is 400r/min; the first sandpaper treatment was repeated 3 times; the surface roughness Ra of the spliced high-purity aluminum pipe target after the first sand paper treatment is 3 mu m; the rotating speed of the lathe in the process of processing the second sand paper is 400r/min; the second sandpaper treatment was repeated 4 times; the rotating speed of the lathe in the process of the scouring pad treatment is 400r/min.
Example 3
The embodiment provides a polishing method for a spliced high-purity aluminum pipe target, which comprises the following steps:
scraping residual indium solder on the surface of the spliced high-purity aluminum tube target, fastening and clamping one end of the spliced high-purity aluminum tube target by using a three-jaw chuck, and supporting and fastening the other end of the spliced high-purity aluminum tube target by using a conical thimble;
sequentially using 180# aluminum oxide sand paper to carry out first sand paper treatment, 320# aluminum oxide sand paper to carry out second sand paper treatment and 180# scouring pad to carry out scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain a polished spliced high-purity aluminum pipe target; the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is 99.95wt%;
the rotating speed of the lathe in the process of processing the first sand paper is 470r/min; the first sandpaper treatment was repeated 3 times; the surface roughness Ra of the spliced high-purity aluminum pipe target after the first sand paper treatment is 1 mu m; the rotating speed of the lathe in the process of processing the second sand paper is 200r/min; the second sandpaper treatment was repeated 6 times; the rotating speed of the lathe in the process of the scouring pad treatment is 300r/min.
Example 4
The embodiment provides a polishing method for a spliced high-purity aluminum pipe target, which comprises the following steps:
scraping residual indium solder on the surface of the spliced high-purity aluminum tube target, fastening and clamping one end of the spliced high-purity aluminum tube target by using a three-jaw chuck, and supporting and fastening the other end of the spliced high-purity aluminum tube target by using a conical thimble;
sequentially using 180# aluminum oxide sand paper to carry out first sand paper treatment, 320# aluminum oxide sand paper to carry out second sand paper treatment and 180# scouring pad to carry out scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain a polished spliced high-purity aluminum pipe target; the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is 99.97wt%;
the rotating speed of the lathe in the process of processing the first sand paper is 600r/min; the first sandpaper treatment was repeated 2 times; the surface roughness Ra of the spliced high-purity aluminum pipe target after the first sand paper treatment is 2.2 mu m; the rotating speed of the lathe in the process of processing the second sand paper is 310r/min; the second sandpaper treatment was repeated 3 times; the rotating speed of the lathe in the process of the scouring pad treatment is 260r/min.
Example 5
The embodiment provides a polishing method for a spliced high-purity aluminum pipe target, which comprises the following steps:
scraping residual indium solder on the surface of the spliced high-purity aluminum tube target, fastening and clamping one end of the spliced high-purity aluminum tube target by using a three-jaw chuck, and supporting and fastening the other end of the spliced high-purity aluminum tube target by using a conical thimble;
sequentially using 180# aluminum oxide sand paper to carry out first sand paper treatment, 320# aluminum oxide sand paper to carry out second sand paper treatment and 180# scouring pad to carry out scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain a polished spliced high-purity aluminum pipe target; the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is 99.94 weight percent;
the rotating speed of the lathe in the process of processing the first sand paper is 520r/min; the first sandpaper treatment was repeated 2 times; the surface roughness Ra of the spliced high-purity aluminum pipe target after the first sand paper treatment is 2.6 mu m; the rotating speed of the lathe in the process of processing the second sand paper is 100r/min; the second sandpaper treatment was repeated 5 times; the rotating speed of the lathe in the process of the scouring pad treatment is 100r/min.
Example 6
This example provides a polishing method for a spliced high purity aluminum pipe target, which is the same as example 1 except that the first sandpaper-treated 180# alumina sandpaper is replaced with 320# alumina sandpaper.
Example 7
This example provided a polishing method for a splice-type high purity aluminum pipe target, which was identical to example 1 except that the rotational speed of the lathe during the first sandpaper treatment was replaced with 700r/min at 500 r/min.
Example 8
This example provided a polishing method for a splice-type high purity aluminum pipe target, which was identical to example 1 except that the rotational speed of the lathe during the first sandpaper treatment was replaced with 300r/min at 500 r/min.
Example 9
This example provides a polishing method for a spliced high-purity aluminum pipe target, which is the same as example 1 except that the rotation speed 400r/min of the lathe in the process of treating the second abrasive paper is replaced by 500 r/min.
Example 10
The present embodiment provides a polishing method of a spliced high-purity aluminum pipe target, which is the same as that of embodiment 1 except that the rotation speed 300r/min of a lathe in the process of scouring pad treatment is replaced with 500 r/min.
Comparative example 1
This comparative example provides a polishing method for a spliced high purity aluminum tube target, which is the same as example 1 except that the second sandpaper treatment is omitted.
Comparative example 2
This comparative example provides a polishing method of a spliced high-purity aluminum pipe target, which is the same as example 1 except that the scouring pad treatment is omitted.
The surface roughness results and texture conditions of the polished spliced high-purity aluminum tube targets obtained in the above examples and comparative examples are shown in table 1.
TABLE 1
| Surface roughness Ra (μm) | Texture condition | |
| Example 1 | 0.2 | Uniform grain |
| Example 2 | 0.4 | Uniform grain |
| Example 3 | 0.5 | Uniform grain |
| Example 4 | 0.7 | Uniform grain |
| Example 5 | 0.8 | Uniform grain |
| Example 6 | 1.4 | Inconsistent texture |
| Example 7 | 1.3 | Inconsistent texture |
| Example 8 | 1.7 | Inconsistent texture |
| Example 9 | 1.9 | Inconsistent texture |
| Example 10 | 2.1 | Inconsistent texture |
| Comparative example 1 | 1.8 | Inconsistent texture |
| Comparative example 2 | 1.8 | Inconsistent texture |
As can be seen from table 1:
(1) It can be seen from comprehensive examples 1-5 that the polishing method of the spliced high-purity aluminum pipe target provided by the invention is simple to operate, the surface roughness Ra of the polished spliced high-purity aluminum pipe target is less than or equal to 0.8 mu m, and the grains are consistent, so that the sputtering use requirement of the aluminum pipe target is met;
(2) As can be seen from the combination of examples 1 and 6, when the 180# alumina abrasive paper treated with the first abrasive paper is replaced with 320# alumina abrasive paper, the surface roughness Ra of the spliced high-purity aluminum tube target is greatly increased to 1.4 μm, and the grains are inconsistent;
(3) It can be seen from the combination of examples 1 and examples 7 to 10 that when the rotation speed of the lathe during the first sand paper treatment is not within the scope defined by the present invention, the rotation speed of the lathe during the second sand paper treatment is too high, and the rotation speed of the lathe during the scouring pad treatment is too high, the surface roughness Ra of the spliced high-purity aluminum tube target is greatly increased, and the lines are inconsistent;
(4) It can be seen from the combination of example 1 and comparative examples 1 to 2 that omitting the second sandpaper treatment or the scouring pad treatment resulted in a spliced high-purity aluminum tube target having a large surface roughness and inconsistent texture.
In summary, the polishing method of the spliced high-purity aluminum pipe target sequentially adopts the specific sand paper and the scouring pad to polish the spliced high-purity aluminum pipe target, and adopts the specific rotating speed of the lathe in the treatment process, so that the surface roughness of the polished target meets the requirements, and the grains are consistent, thereby achieving the purposes of ensuring the surface quality of the product and improving the qualification rate of the product.
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.
Claims (8)
1. The polishing method of the spliced high-purity aluminum pipe target is characterized by comprising the steps of sequentially performing first sand paper treatment, second sand paper treatment and scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain the polished spliced high-purity aluminum pipe target;
the first sand paper treatment is carried out by using No. 180 sand paper; the surface roughness Ra of the spliced high-purity aluminum pipe target after the first sand paper treatment is 1-3 mu m; the second sand paper treatment is carried out by using 320# sand paper; the scouring pad treatment is carried out by using a No. 180 scouring pad; the surface roughness Ra of the polished spliced high-purity aluminum pipe target is less than or equal to 0.8 mu m;
the rotating speed of the lathe in the process of treating the first sand paper is 400-600 r/min; the rotating speed of the lathe in the process of processing the second sand paper is below 400r/min; the rotating speed of the lathe in the process of the scouring pad treatment is below 400r/min;
the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is more than or equal to 99.9wt%.
2. The polishing method as recited in claim 1, wherein the spliced high purity aluminum tube target is scraped of indium solder remaining on the surface and fixed on a lathe before the first sandpaper treatment is performed.
3. The polishing method as recited in claim 2, wherein the fixing method comprises fastening and clamping one end of the spliced high purity aluminum tube target by using a three-jaw chuck, and fastening the other end by using a conical thimble.
4. The method of claim 1, wherein the # 180 sandpaper comprises # 180 alumina sandpaper.
5. A polishing method as recited in claim 1, wherein the first sandpaper treatment is repeated 2-3 times.
6. The method of claim 1, wherein the 320# sandpaper comprises 320# alumina sandpaper.
7. A polishing method as recited in claim 1, wherein the second sandpaper treatment is repeated more than 3 times.
8. The polishing method as recited in claim 1, wherein the polishing method comprises:
scraping residual indium solder on the surface of the spliced high-purity aluminum tube target, fastening and clamping one end of the spliced high-purity aluminum tube target by using a three-jaw chuck, and supporting and fastening the other end of the spliced high-purity aluminum tube target by using a conical thimble;
sequentially using 180# aluminum oxide sand paper to carry out first sand paper treatment, 320# aluminum oxide sand paper to carry out second sand paper treatment and 180# scouring pad to carry out scouring pad treatment on the surface of the spliced high-purity aluminum pipe target to obtain a polished spliced high-purity aluminum pipe target with the surface roughness Ra less than or equal to 0.8 mu m; the spliced high-purity aluminum tube target sequentially comprises a 304 stainless steel inner tube, an indium solder layer and a high-purity aluminum tube from inside to outside; the purity of the high-purity aluminum pipe is more than or equal to 99.9wt%;
the rotating speed of the lathe in the process of treating the first sand paper is 400-600 r/min; repeating the first sand paper treatment for 2-3 times; the surface roughness Ra of the spliced high-purity aluminum pipe target after the first sand paper treatment is 1-3 mu m; the rotating speed of the lathe in the process of processing the second sand paper is below 400r/min; repeating the second sandpaper treatment more than 3 times; the rotating speed of the lathe in the process of the scouring pad treatment is below 400r/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211294094.9A CN115464543B (en) | 2022-10-21 | 2022-10-21 | Polishing method for spliced high-purity aluminum pipe target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211294094.9A CN115464543B (en) | 2022-10-21 | 2022-10-21 | Polishing method for spliced high-purity aluminum pipe target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115464543A CN115464543A (en) | 2022-12-13 |
| CN115464543B true CN115464543B (en) | 2024-03-22 |
Family
ID=84336412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211294094.9A Active CN115464543B (en) | 2022-10-21 | 2022-10-21 | Polishing method for spliced high-purity aluminum pipe target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115464543B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103567583A (en) * | 2012-07-30 | 2014-02-12 | 宁波江丰电子材料有限公司 | Method for welding aluminum target assemblies |
| CN107866721A (en) * | 2016-09-26 | 2018-04-03 | 合肥江丰电子材料有限公司 | The processing method of target material assembly |
| JP2018193603A (en) * | 2017-05-22 | 2018-12-06 | 住友金属鉱山株式会社 | Method for manufacturing cylindrical target material, method for manufacturing cylindrical sputtering target, jig for machining cylindrical sintered body, grinding device, and cylindrical target material |
| CN112059345A (en) * | 2020-08-31 | 2020-12-11 | 宁波江丰电子材料股份有限公司 | Brazing method of high-purity aluminum target material assembly and high-purity aluminum target material assembly |
| CN113021125A (en) * | 2021-03-04 | 2021-06-25 | 宁波江丰电子材料股份有限公司 | Method for treating titanium target sputtering surface |
| CN113084674A (en) * | 2021-04-29 | 2021-07-09 | 合肥江丰电子材料有限公司 | Automatic polishing process method of aluminum-containing target material |
| CN113652655A (en) * | 2021-08-16 | 2021-11-16 | 宁波江丰电子材料股份有限公司 | Preparation method of high-purity aluminum target material |
| CN114107918A (en) * | 2021-11-25 | 2022-03-01 | 宁波江丰电子材料股份有限公司 | Cold isostatic pressing binding method for high-purity aluminum rotary target |
| CN114406393A (en) * | 2022-01-24 | 2022-04-29 | 宁波江丰电子材料股份有限公司 | Aluminum pipe target welding base auxiliary device and using method thereof |
-
2022
- 2022-10-21 CN CN202211294094.9A patent/CN115464543B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103567583A (en) * | 2012-07-30 | 2014-02-12 | 宁波江丰电子材料有限公司 | Method for welding aluminum target assemblies |
| CN107866721A (en) * | 2016-09-26 | 2018-04-03 | 合肥江丰电子材料有限公司 | The processing method of target material assembly |
| JP2018193603A (en) * | 2017-05-22 | 2018-12-06 | 住友金属鉱山株式会社 | Method for manufacturing cylindrical target material, method for manufacturing cylindrical sputtering target, jig for machining cylindrical sintered body, grinding device, and cylindrical target material |
| CN112059345A (en) * | 2020-08-31 | 2020-12-11 | 宁波江丰电子材料股份有限公司 | Brazing method of high-purity aluminum target material assembly and high-purity aluminum target material assembly |
| CN113021125A (en) * | 2021-03-04 | 2021-06-25 | 宁波江丰电子材料股份有限公司 | Method for treating titanium target sputtering surface |
| CN113084674A (en) * | 2021-04-29 | 2021-07-09 | 合肥江丰电子材料有限公司 | Automatic polishing process method of aluminum-containing target material |
| CN113652655A (en) * | 2021-08-16 | 2021-11-16 | 宁波江丰电子材料股份有限公司 | Preparation method of high-purity aluminum target material |
| CN114107918A (en) * | 2021-11-25 | 2022-03-01 | 宁波江丰电子材料股份有限公司 | Cold isostatic pressing binding method for high-purity aluminum rotary target |
| CN114406393A (en) * | 2022-01-24 | 2022-04-29 | 宁波江丰电子材料股份有限公司 | Aluminum pipe target welding base auxiliary device and using method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115464543A (en) | 2022-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3231659B2 (en) | Automatic polishing equipment | |
| CN102528597B (en) | Manufacturing process of large-diameter silicon wafer | |
| JPH11254309A (en) | Device and method for machining wafer | |
| US6635500B2 (en) | Treatment of substrates | |
| CN102553849B (en) | Cleaning device and cleaning method for fixed grinding particle polishing pad | |
| JPH09237771A (en) | Method and tooling for recycling wafers or substrate materials | |
| CN114161245B (en) | Silicon wafer thinning device and thinning processing technology for monocrystalline silicon wafer | |
| KR100690098B1 (en) | Semiconductor wafer polishing method and semiconductor wafer polishing device | |
| CN101656195A (en) | Method for manufacturing large-diameter silicon wafer | |
| CN115464543B (en) | Polishing method for spliced high-purity aluminum pipe target | |
| CN107243821A (en) | A kind of single-sided polishing method of sapphire substrate sheet | |
| CN112809455A (en) | Tungsten silicon target material and polishing method of sputtering surface thereof | |
| CN108214110A (en) | A kind of silicon polished edge processing technology | |
| CN101733697A (en) | Silicon chip polishing method | |
| WO2019043895A1 (en) | Double-side polishing method for silicon wafer | |
| CN113561051B (en) | Wafer regeneration processing device and control system | |
| CN110116340A (en) | A kind of polishing process of cadmium zinc telluride crystal wafer | |
| JP4012488B2 (en) | Machining method of flaky workpiece | |
| JP2001007064A (en) | Grinding method of semiconductor wafer | |
| CN113770901A (en) | Polishing method for sputtering surface of target | |
| CN108789163A (en) | A kind of silicon chip back side polishing device and polishing method | |
| JPH08197393A (en) | Manufacturing method for aluminium specular surface pipe | |
| JPH10328986A (en) | Disk substrate intermediate, manufacture thereof, and grinding work device | |
| CN218487931U (en) | Conical surface grinding wheel and grinding equipment | |
| JP4801438B2 (en) | Polishing apparatus and polishing processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |