CN1154533A - Method for fabricating magnetic head - Google Patents
Method for fabricating magnetic head Download PDFInfo
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- CN1154533A CN1154533A CN 96123302 CN96123302A CN1154533A CN 1154533 A CN1154533 A CN 1154533A CN 96123302 CN96123302 CN 96123302 CN 96123302 A CN96123302 A CN 96123302A CN 1154533 A CN1154533 A CN 1154533A
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Abstract
In a method for fabricating a magnetic head in which a block is cut from a wafer, and either the element height of a magnetoresistive head or the gap depth of a thin-film magnetic head is machined to a prescribed value, a resistance monitoring pattern for monitoring element height machining, said monitoring pattern comprising a first resistance pattern having a surface area which decreases in a nearly linear manner as machining progresses in the direction that reduces the element height and a second resistance pattern having a surface area which decreases in nearly piecewise linear manner as machining progresses in the direction that reduces the element height, is formed on the wafer block at the time of said wafer process, a determination being made during the machining and based on the resistance value of the resistance monitoring pattern, of the timing of stopping the machining which reduces the element height.
Description
The present invention relates to a kind of method of making magnetic head, comprise step: growing film is used for comprising at least the magnetic head of reluctance head of two-dimensional arrangement and a thin-film heads on the thin slice; Downcut a module from thin slice, line spread a plurality of magnetic heads on it; Reluctance head element heights in the cutting mould module unit (height of reluctance head part) or thin-film heads gap depth are to desirable value; And after above-mentioned processing, make single magnetic head by separation module.
The well known device that is provided for highdensity reproducing head is to use the reluctance head device of magnetoresistive element, its electrical response magnetic field intensity.This head is called reluctance head (MR head), and AMR (anisotropy) head of the anisotropic magneto-resistive effect utilized is arranged, and GMR (giant magnetoresistance) head that utilizes giant magnetoresistance effect.
The AMR head comprises the soft adjacent layer of making by as the magnetization magnetic material of NiFeCr (Ni-Fe-chromium), non-magnetic center Ta (tantalum) layer, by magnetic resistance (MR) layer of making as the material of NiFe (ferrite), basic magnetization and BCS (boundary Control the is stable) layer of making by the FeMn (iron-manganese) of antiferromagnet, and a pair of conductive layer that is used to provide the detection electric current, they are arranged in parallel on the BCS layer with the distance of corresponding record track width, these layers are sequential cascade according to this, make magneto-resistance effect element, utilize the BCS layer on the track record Width, magnetic biasing to be added to magneto-resistive layer, on the direction of vertical BCS layer magnetic biasing, magnetic biasing is added to magneto-resistive layer by soft adjacent layer.
In the GMR head, utilize giant magnetoresistance effect, can obtain apparently higher than the density of AMR head.The magnetoresistive element part of GMR head also has stepped construction, the nonmagnetic layer of wherein a plurality of magnetospheres and insertion, a pair ofly be used to provide the conductive layer that detects electric current stacked, this is arranged in juxtaposition the distance of conductive layer with the corresponding record track width, is installed in the magnetoresistive element part.
Above-mentioned reluctance head can only reproduce, and can not be used for record.For this reason, it mixes use with the thin-film heads that writes down usually, forms combined record.
Fig. 1 shows the main part of combined record, and Fig. 2 is the planimetric map of magnetoresistive element part and conductive layer in the displayed map 1.
Among the above-mentioned figure, the track on the mark 10 expression magnetic recording medias, 20 expressions record the information in the record-header part that the thin-film heads on the magnetic recording media forms, and the reproducing part that the reluctance head of information reproduction forms is finished in 30 expressions.Record-header part 20 comprises by the lower magnetic pole of making as NiFe 21, lower magnetic pole and by the last magnetic pole of making as NiFe 22, and the coil 23 that encourages these magnetic poles 21 and 22 relatively, and record-header partly makes information be recorded on the track 10 of magnetic recording media.In the space of coil 23, be provided with nonmagnetic insulating layer 24, it is by Al
2O
3Or analog makes, so that remaining space not therebetween.
Reproduce 30 by the AMR head, GMR head or analog form, and on magnetoresistive element part 30A, a pair of be used to provide detect the conductive layer 31 of electric current to magnetoresistive element part 30A, its spacing is from the respective distances track width.
Stacked situation with reference to Fig. 3 declare record head part 20 and reproduction head part 30.Fig. 3 is a sectional view, and it shows the lit-par-lit structure of observing the head gap district from magnetic recording media.Among Fig. 3, mark 25 expressions one ceramic substrate forms Al on it
2O
3Or the nonmagnetic insulating layer 26 of analog, the following screen layer 27 of NiFe or analog, and Al
2O
3Or the nonmagnetic insulating layer 28 of analog, according to that order, on this nonmagnetic insulating layer 28 tops, form and reproduce a magnetoresistive element part 30A of 30.If reproducing a magnetoresistive element part 30A of 30 is become by the AMR capitiform, soft adjacent layer, the non-magnetic center layer of making by Ta or analog, the magneto-resistive layer of making by NiFe or analog, and make the BCS layer by FeMn or analog and be formed in proper order on the nonmagnetic insulating layer 28 according to that.On the top of this magnetoresistive element part 30A, form pair of conductive layer 31, be used to provide detection electric current to magnetoresistive element part 30A, these interlayers apart from the corresponding record track width.
And nonmagnetic insulating layer 32 is formed on magnetoresistive element part 30A and the conductive layer 31, and forms record-header part 20 on this top.That is, order forms the lower magnetic pole of being made by NiFe or analog (following screen layer) 21, and coil 23 (not shown among Fig. 3) is by Al
2O
3Or the nonmagnetic insulating layer 24 made of analog, and the upper shielding layer of making by NiFe or analog 22.Then, on the outside of last magnetic pole 22, form at last by Al
2O
3Or the protective seam 33 made of analog, so that cover the surface of record-header part 20.
When manufacturing has the magnetic head of said structure, processing comprises step: growing film on thin slice, so that a plurality of magnetic heads are arranged on two-dimensional arrangement, from thin slice cutting down wherein with the module of a plurality of magnetic heads of line spread, reluctance head element heights or thin-film heads gap depth be to desirable value in the cutting mould module unit, and make single magnetic head by separation module after above-mentioned processing.
Do like this, need by grinding or similar processing with the reluctance head element heights (among Figure 13 magnetoresistive element part 30A on/following direction width) or thin-film heads gap depth (on the part of Figure 13 intermediate gap/following direction width) be cut to exact value, because critical effect, this influences characteristic of magnetic head.This cutting is carried out with above-mentioned steps.By the known method that grinds or similar processing will be cut to set-point as the reluctance head element heights to be cut or the thin-film heads gap depth of module be, form cutting reference resistance figure, it reduces along with the progress of the cutting on the wafer processes place module, and the some place when the resistance value of cutting reference resistance figure reaches setting stops cutting.
But film thickness and its change in resistance of cutting reference resistance figure are very big.Film thickness particularly is even also inhomogeneous in same thin slice.For this reason, even exist the resistance value of cutting reference resistance figure to reach setting (desired value), also reluctance head component thickness or thin-film heads gap depth can't be cut to the problem of setting, and have in the method for said structure magnetic head accurately cutting reluctance head element heights or thin-film heads gap depth in manufacturing.
As the solution of the problems referred to above, can imagine the setting of the target resistance values of each separate modular (module is the unit that is used to cut, and is also referred to as workpiece).But this is unrealistic, and does not allow process automation.Not measured resistance value is also arranged, and direct measurement pattern shape, and reach the method that the some place of setting stops to cut in its size.But, in this manufacture method, be the measurement pattern shape, need repeatedly stop processing with cutting progress, this processing is accompanied by the danger of too much removing material, not only makes actually to reach highly accurately difficult cutting, and hinders process automation.
Consider the problems referred to above in related field, the purpose of this invention is to provide a kind of method of making magnetic head, it not only can accurately be cut to setting with reluctance head component thickness or thin-film heads gap depth, is not subjected to the influence of resistance pattern film thickness or its change in resistance, but and robotization.
The present invention relates to address the above problem, be used to make the method for the magnetic head that comprises reluctance head, it has wafer processes, the magnetic head that wherein comprises a reluctance head at least is formed on the thin slice with two-dimensional arrangement, cutting processing, wherein downcut the module of a plurality of magnetic heads of line spread on it from thin slice, cut, above-mentioned thus reluctance head magnetoresistive element part is cut to setting in a modular unit, and separate and process, after above-mentioned processing, make single magnetic head thus by separating from above-mentioned module, be used to monitor that the resistance monitoring graphics of element heights cutting comprises first resistance pattern and second resistance pattern, the surface area of first resistance pattern is with almost linear minimizing of cutting progress that reduces on the reluctance head element heights direction, and the surface area of second resistance pattern reduces in piecewise linearity mode almost with the cutting progress that reduces on the reluctance head element heights direction, the resistance monitoring graphics is formed in described wafer processes on the thin slice module, determines the moment that the cutting of minimizing element heights in the above-mentioned cut finishes according to the resistance value of this resistance monitoring graphics.
According to the present invention, with the cutting progress that reduces on the reluctance head element heights direction, the surface area of first resistance pattern is almost linear to be reduced, and the surface area of second resistance pattern almost reduces in the piecewise linearity mode.Utilize position that the second resistance pattern surface area change to show breakpoint as can be known, no matter whether reached cutting, changing the appearance of the point of interruption by detection resistance value can be easily and accurately determine this position, because the breakpoint in the surface area shows as the breakpoint in the resistance change.
Like this, by the appearance of the relevant second resistance pattern resistance change point of interruption, the resistance value of first resistance pattern when utilizing this breakpoint to occur can be determined to finish to reduce the moment that element heights is cut according to the resistance value of first resistance pattern.Do like this, can not only accurately cut the reluctance head element heights, be not subjected to the influence of film thickness and resistance pattern change in resistance, and can make process automation to setting.
The example of carving method when determining to stop to cut, next method is arranged: the resistance value of first resistance pattern when at least a plurality of breakpoints being determined breakpoint to occur in the second resistance pattern resistance change, relation between a plurality of thus resistance value point prediction reluctance head element heights cutting positions and the first resistance pattern resistance value, and relation is established stopping constantly of cutting thus.
More specifically, the resistance value of first resistance pattern when at least three breakpoints being determined breakpoint to occur in the second resistance pattern resistance change, the resistance value at these three breakpoint places is used to predict the curve of order 2 that concerns between the reluctance head element heights cutting position and the first resistance pattern resistance value, calculate the resistance value of object component height place first resistance pattern according to the curve of order 2 of being predicted, when the actual measured value of first resistance pattern reaches this calculated resistance value, almost stop to reduce the cutting of element heights simultaneously.This method can obtain satisfied high precision precision cutting.
The present invention relates to address the above problem, be used to make the method for the magnetic head that comprises thin-film heads, it has wafer processes, the magnetic head that wherein comprises a thin-film heads at least is formed on the thin slice with two-dimensional arrangement, cutting processing, wherein downcut the module of a plurality of magnetic heads of line spread on it from thin slice, cut, above-mentioned thus thin-film heads gap portion is cut to the prescribed depth value in a modular unit, and separate and process, after above-mentioned processing, make single magnetic head thus by separating from above-mentioned module, be used to monitor that the resistance pattern of gap depth cutting comprises first resistance pattern and second resistance pattern, the surface area of first resistance pattern is with almost linear minimizing of cutting progress that reduces on the above-mentioned thin-film heads gap depth direction, and the surface area of second resistance pattern reduces in piecewise linearity mode almost with the cutting progress that reduces on the reluctance head element heights direction, the resistance monitoring graphics is formed in above-mentioned wafer processes on the thin slice module, determines the moment that the cutting of minimizing gap depth in the above-mentioned cut finishes according to the resistance value of this resistance monitoring graphics.
According to the present invention, with the cutting progress that reduces on the thin-film heads gap depth direction, the surface area of first resistance pattern is almost linear to be reduced, and the surface area of second resistance pattern almost reduces in the piecewise linearity mode.Utilize position that the second resistance pattern surface area change to show breakpoint as can be known, no matter whether reached cutting, changing the appearance of the point of interruption by detection resistance value can be easily and accurately determine this position, because the breakpoint in the surface area shows as the breakpoint in the resistance change.
Like this, by the appearance of the relevant second resistance pattern resistance change point of interruption, the resistance value of first resistance pattern when utilizing this breakpoint to occur can be determined to finish to reduce the moment that gap depth is cut according to the resistance value of first resistance pattern.Do like this, can not only accurately cut the thin-film heads gap depth, be not subjected to the influence of film thickness and resistance pattern change in resistance, and can make process automation to setting.
The example of carving method when determining to stop to cut, next method is arranged: the resistance value of first resistance pattern when at least a plurality of breakpoints being determined breakpoint to occur in the second resistance pattern resistance change, relation between a plurality of thus resistance value point prediction reluctance head element heights cutting positions and the first resistance pattern resistance value, and relation is established stopping constantly of cutting thus.
More specifically, the resistance value of first resistance pattern when at least three breakpoints being determined breakpoint to occur in the second resistance pattern resistance change, the resistance value at these three breakpoint places is used to predict the curve of order 2 that concerns between the thin-film heads gap depth cutting position and the first resistance pattern resistance value, calculate the resistance value of target gap degree of depth place first resistance pattern according to the curve of order 2 of being predicted, when the actual measured value of first resistance pattern reaches this calculated resistance value, almost stop to reduce the cutting of gap depth simultaneously.This method wishes to obtain cutting highly accurately.
The present invention relates to address the above problem, be used to make the method for the magnetic head that comprises reluctance head, its another form is, has wafer processes, the magnetic head that wherein comprises a reluctance head at least is formed on the thin slice with two-dimensional arrangement, cutting processing, wherein downcut the module of a plurality of magnetic heads of line spread on it from thin slice, cut, above-mentioned thus reluctance head magnetoresistive element part is cut to the specified altitude value in a modular unit, and separate and process, after above-mentioned processing, make single magnetic head thus by separating from above-mentioned module, be used to monitor that the resistance monitoring graphics of element heights cutting comprises a kind of resistance pattern, its surface area makes progress with almost piecewise linearity minimizing with the cutting that reduces on the reluctance head element heights direction, the resistance monitoring graphics is formed on the thin slice module when above-mentioned wafer processes, then, before the point that reaches above-mentioned reluctance head height desired value place, in the cutting region of describing by cutting position, the resistance value of this above-mentioned resistance pattern in cutting position place shows breakpoint, determine the cutting speed in the cutting region, cutting speed is calculated the required time of object component height that reaches thus, almost with reach above-mentioned time quantum simultaneously, stop to reduce the cutting of element heights.
According to this form of the present invention, with the cutting progress that reduces on the reluctance head element heights direction, the surface area of resistance pattern reduces in piecewise linearity mode almost.Utilize position that the resistance pattern surface area change to show breakpoint as can be known, no matter whether reached cutting, changing the appearance of the point of interruption by detection resistance value can be easily and accurately determine this position, because the breakpoint in the surface area shows as the breakpoint in the resistance change.
Like this, before the point that reaches magnetoresistive element height desired value place, in the cutting region of being described by cutting position, the resistance value of this above-mentioned resistance pattern in cutting position place shows breakpoint, determine the cutting speed in the cutting region, and speed calculation reaches the required time of object component height thus.Do like this, can not only accurately cut the reluctance head element heights, be not subjected to the influence of film thickness and resistance pattern change in resistance, and can make process automation to setting.
The present invention relates to address the above problem, be used to make the method for the magnetic head that comprises thin-film heads, its another form is, has wafer processes, the magnetic head that wherein comprises a thin-film heads at least is formed on the thin slice with two-dimensional arrangement, cutting processing, wherein downcut the module of a plurality of magnetic heads of line spread on it from thin slice, cut, above-mentioned thus reluctance head gap depth part is cut to the specified altitude value in a modular unit, and separate and process, after above-mentioned processing, make single magnetic head thus by separating from above-mentioned module, be used to monitor that the resistance monitoring graphics of gap depth cutting comprises a kind of resistance pattern, its surface area makes progress with almost piecewise linearity minimizing with the cutting that reduces on the thin-film heads gap depth direction, the resistance monitoring graphics is formed on the thin slice module when above-mentioned wafer processes, then, before the point that reaches above-mentioned thin-film heads gap depth desired value place, in the cutting region of describing by cutting position, the resistance value of this above-mentioned resistance pattern in cutting position place shows breakpoint, determine the cutting speed in the cutting region, cutting speed is calculated the required time of the target gap degree of depth that reaches thus, almost with reach above-mentioned time quantum simultaneously, stop to reduce the cutting of element heights.
According to this form of the present invention, with the cutting progress that reduces on the thin-film heads gap depth direction, the surface area of resistance pattern reduces in piecewise linearity mode almost.Utilize position that the resistance pattern surface area change to show breakpoint as can be known, no matter whether reached cutting, changing the appearance of the point of interruption by detection resistance value can be easily and accurately determine this position, because the breakpoint in the surface area shows as the breakpoint in the resistance change.
Like this, before the point that reaches the common gap depth desired value place of film, in the cutting region of being described by cutting position, the resistance value of this above-mentioned resistance pattern in cutting position place shows breakpoint, determine the cutting speed in the cutting region, and speed calculation reaches the required time of object component height thus.Do like this, can not only accurately cut the thin-film heads gap depth, be not subjected to the influence of film thickness and resistance pattern change in resistance, and can make process automation to setting.
The normally compound recoding/reproduction magnetic head of magnetic head under the above-mentioned various situations of the present invention, wherein thin film recording head is layered in and reproduces on the reluctance head.For making cutting accurately, wish that above-mentioned figure is located at module two ends and its core.
By with reference to the accompanying drawings, preferred embodiment is described, above-mentioned purpose of the present invention and characteristics will be more obvious, wherein:
Fig. 1 shows plain edition combined record main body;
Fig. 2 is the planimetric map of displayed map 1 magnetoresistive element part and conductive layer;
Fig. 3 shows the sectional view of observing the stacked situation of interstitial area from Fig. 1 magnetic recording media;
Fig. 4 shows the example of used resistance monitoring graphics among the present invention;
Fig. 5 shows the thin slice behind the growth magnetic head film;
Fig. 6 display module shape;
Fig. 7 shows the variation of opposed member height cutting position analog electrical resistance and the variation of digital resistance value;
Fig. 8 shows another resistive layer figure down;
Fig. 9 A to Fig. 9 K shows magnetic head manufacturing processing of the present invention;
Figure 10 shows that the present invention determines to stop to reduce the process flow diagram of cutting process constantly on the magnetic head element short transverse;
Figure 11 shows that the present invention determines to stop to reduce the process flow diagram of cutting another process constantly on the magnetic head element short transverse;
Figure 12 shows that the present invention determines to stop to reduce the cutting process flow diagram of a process more constantly on the magnetic head element short transverse;
Figure 13 show be depressed into module on the abrasive sheet and processings structure, the while is carried out the independent control of grinding pressure at three positions.
With reference to accompanying drawing (4 to 15), describe the preferred embodiment of the present invention in detail.
The preferred embodiment of the present invention has following 1 to 4 procedure of processing.(1) wafer processes: form magnetic head film with two-dimensional arrangement, comprise a reluctance head or a thin-film heads.(2) cutting processing: downcut a module from thin slice, line spread a plurality of magnetic heads on it.(3) cut: in a unit of module, be cut to the designated value of reluctance head element heights or thin-film heads gap depth.(4) separate processing: after the cut module is divided into single magnetic head.
Now, specify each procedure of processing, for example among Fig. 5, thin slice 1 in above-mentioned wafer processes, increases the magnetic head that a film forms (they comprise reluctance head and/or thin-film heads) two dimensional form from the teeth outwards as shown in the figure near circular.
After increasing magnetic head film on the thin slice 1, in cutting processing, downcut a plurality of modules from thin slice 1.In example shown in Figure 5, in two row, form a plurality of modules 2, these modules are cut along contour area circle.
As shown in Figure 6, each module 2 has the magnetic head 3 of line spread, and two ends and the centre in module 2 provides a resistance monitoring graphics 4 in this example, and it is used for monitoring cutting.The element heights direction of reluctance head or thin-film heads gap depth direction will be among Fig. 6 upward to.In this case, module 2 is finished by grinding, and as shown in Figure 6, cutting surface is exactly the bottom surface 2A of module 2.
Grinding is a kind of accurate cutting form, wherein by the extra-fine grinding potpourri as diamond slurry and so on is provided between work package and abrasive sheet instrument, when apply suitable pressure between work package and abrasive sheet, will make them do relative motion.Ground and mixed liquid once grinds work package with trace, and the work package surface is ground on the smooth accurate surface like this.
Cut it in grinding module 2, on three total positions, i.e. the two ends of module 2 and middle part impose grinding pressure for module 2 according to the resistance value of the resistance monitor figure that is used to monitor cutting and independently control.
A cutting mark 5 is arranged in resistance monitoring graphics 4 outsides.This cutting mark 5 is used for the pre-cutting before the accurate cutting of using resistance monitoring graphics 4.After the cut, each module 2 is divided into single magnetic head in division processing.
The resistance monitoring graphics that is used to monitor cutting that uses is in the present invention described now.
Fig. 4 has shown the example that is used for resistance monitoring graphics of the present invention, in this example, carry out almost the first resistance pattern shape of the linear surface area that reduces and form the resistance monitoring graphics by having second resistance pattern that carries out the surface area that linear segmented almost reduces with cutting by having with cutting.
Among Fig. 4, resistance monitoring graphics 40 is formed by first resistance pattern and second resistance pattern.First resistance pattern, the 41 outer rectangles that form have with cutting and carry out from the almost linear surface area that reduces of lapped face P direction.Second resistance pattern, 42 profiles also become rectangle, but there is a window shape space (resistance pattern does not have the part of formation, and 43 to 47 5 parts are arranged in this example) its inboard.
Space window frame portion 43,44 on the polishing face P side, the space (reveal between 45,46, they are positions that breakpoint occurs) and witness mark line (in this example, the top margin of first resistance pattern 41) be Pa=Pa1, Pa2, Pa3, Pa4, Pa5 and as shown in Figure 4, the order size reduces gradually successively.Because this reason, along with cutting from the polishing face P direction, the surface area of second resistance pattern 42 almost linearity reduces.When the quantity of material that is cut reached the frame part of abrasive surface side window mouth 43,44,45,46 and 47, the breakpoint in the surface area variation appearred.
The resistance value of first resistance pattern 41 (call the analog electrical resistance in the following text, write a Chinese character in simplified form " AR " sometimes) is measured between terminal 48 and 49, and the resistance value of second resistance pattern 42 (call digital resistance value in the following text, write a Chinese character in simplified form " DR " sometimes) is measured between terminal 49 and 50. Resistance pattern 41 and 42 resistance value are inversely proportional to the surface area of resistance pattern 41 and 42 respectively.So, having under second resistance pattern, 42 situations of surface area breakpoint, breakpoint also appears in the variation of digital resistance value.
Describe the variation in the digital resistance value below in detail.At first, if we see space window 43, if R1 is the resistance value of 43 times resistance patterns of adjacent window, and RV1 is the resistance value of the top of window resistance pattern, the window 43 top/bottom electrical resistances of the resistance pattern (looking the offside of polishing face P from window 43) at window 43 tops and the mixing of bottommost resistance pattern (polishing face P side) are the hybrid resistor values of R1 and RV1.In this case, owing to abut against the electric parallel connection of top resistance pattern of resistance pattern on the window 43 and window 43, the top of window 43/bottom electrical resistance is (R1 * RV1)/(R1+RV1) corresponding to the parallel connection of resistance value R1 and resistance value RV1.
In the working angles, RV1 reduces, and during 43 frame parts of the window on being cut to the polishing face P side (at this point, the distance between breakpoint location and the witness mark line is Pa=Pa1), because all resistance patterns of window 43 bottommosts are capped the RV1 vanishing.For this reason, this moment, window 43 top/bottom resistance R were exactly R1.Subsequently because the existence of window 43 keeps this resistance value is R1, and no matter which stage is the cutting process be in.So window 43 top/bottom resistance change to steady state value from the state of increasing sharply, and breakpoint occurs at this.
But, in the working angles, RV2, RV3, RV4 and RV5 reduce, and when the window 44 that is cut on the polishing face P side, (at this point, the distance between breakpoint location and the witness mark line is respectively Pa=Pa2 during 45,46 and 47 frame part, Pa3, Pa4 and Pa5), because window 44,45,46 and 47 all resistance patterns of bottommost are capped, and this moment, window 43 top/bottom electrical resistances were exactly R2, R3, R4 and R5.Keeping this resistance value by the existence of window 43 subsequently is R1, and no matter which stage is the cutting process be in.So, window 44,45,46 and 47 top/bottom resistance change to steady state value from the state of increasing sharply, and breakpoint occurs at this.
Fig. 7 shows for (a) the variation (being similar to) among the artifical resistance Ra and the variation among the digital resistance value Rd of distance P of element heights cutting position, curve F1 shows the artifical resistance of measuring between the terminal 48 and 49, and curve F2 shows the digital resistance value Rd that measures between the terminal 49 and 50.
In a preferred embodiment of the invention, by detecting the breakpoint in the resistance pattern 40 digital resistance value Rd variations, know the cutting stage of reluctance head element heights and/or thin-film heads gap depth.Like this, for reaching the purpose of further improvement cutting precision, it is very important accurately to measure this breakpoint.
Reason for this reason for example, is the about 1/3 of R1 to R5 value by selecting RV1 to RV5 initial value, considers the relation of R1 to R5 value and RV1 to RV5 initial value, can breakpoint obviously be occurred.For example, the method for the magnitude relationship between change R1 to R5 and the RV1 to RV5 is to look from window 43, form a grinding layer on the polishing face P side visuals, that is, form the visuals of RV1 to RV5 (fixed part among Fig. 4), the resistance of the low electrical resistant material layer that successively decreases is so that reduce RV1 to RV5.The transverse width of layer is small in the transverse width of window 43 to 47 if the resistance that forms successively decreases, when proceeding to the frame part on each the polishing face P side of window 43 to 47 in cutting, the layer residue even resistance successively decreases, RV1 to RV5 will not influenced by this, and vanishing.
Detecting breakpoint from the signal of display digit resistance value Rd goes out the method for now and comprise: (1) (for example monitors digital resistance value Rd level with fixed intervals, with the grinding that occurs therebetween the time interval less than 0.1um), and the moment that definite breakpoint occurs be to occur the maximum point that changes among the Rd; (2) signal of difference display digit resistance value Rd, and from this distinguishing signal, occur on time determining the moment that breakpoint occurs in the point of peak value.No matter which kind of method of use all can accurately be determined breakpoint.
The resistance monitoring graphics mostly has accurate position to concern with magnetic head (reluctance head and/or thin-film heads).For this reason, except with the procedure of processing growth resistance monitoring graphics identical with in wafer processes, forming magnetoresistive element, for example, wish to finish figure, make the same of figure accuracy and actual reluctance head element or analog with resembling one of magnetoresistive element and identical cover and one and same steps as.
For the above-mentioned resistance of the growing layer film that successively decreases, can be at the resistance monitoring graphics, rather than the resistance layer that successively decreases goes up a growth insulation course, can spray or apply the resistance layer that successively decreases on it.The successively decrease figure of layer of this resistance does not limit to and figure shown in Figure 4, can continue to form the resistance layer that successively decreases, as shown in Figure 8, and each of corresponding window 43 to 47.Thus, form the resistance layer pattern that successively decreases.
When thin film recording head is stacked in the compound recoding/reproduction magnetic head that reproduces on the reluctance head as magnetic head, can form the resistance monitoring graphics when forming the magnetoresistive element part, use and the magnetoresistive element identical materials, form the top shielding layer as the layer that successively decreases of the resistance between reluctance head and the thin-film heads.Fig. 9 A to Fig. 9 K shows used in this case manufacture process.
In these manufacture processes, at first go up and form the substrate protection layer at substrate 71 (Fig. 9 A), order (Fig. 9 B and Fig. 9 C) forms the low screen layer 73 that NiFe or analog are made on it according to this, and Al
2O
3The insulation course of making 74.Then, on the top of insulation course 74 (Fig. 9 D), form magnetoresistive element part 75.As fruit structure is to make reluctance head 75 with the AMR head, should form soft adjacent layer successively on insulation course 74, the non-magnetic center layer that Ta or analog are made, the magneto-resistive layer that NiFe or analog are made, and the BCS layer made of FeMn or analog.In this example, with one and identical process formation figure 75A, as the resistance monitoring graphics.
Pair of terminal 76 with the distance of corresponding record track width, is formed on the magnetoresistive element part 75, so that the detection electric current is provided.Terminal 76A is used to detect the analog electrical resistance and digital resistance value forms (Fig. 9 E) simultaneously.In addition, nonmagnetic insulating layer 77 is formed on (Fig. 9 F) on magnetoresistive element part 75 and the terminal 76, forms thin-film heads on it, and the back will illustrate.
At first, form upper shielding layer (lower magnetic pole) 78 by NiFe or analog.The part 78A of this upper shielding layer 78 also is formed on the top of figure 75A (Fig. 9 G), and part 78A forms the above-mentioned resistance layer that successively decreases.Then, the clearance layer 79 of thin-film heads forms (Fig. 9 H), and coil also is (not shown among Figure 10) like this, and goes up magnetic pole 80 and make (Fig. 9 I) by NiFe or analog.Then, be formed for (Fig. 9 J) behind the terminal that reluctance head and resistance monitors, for the surface of cover film head forms Al in the outside
2O
3Or the protective seam 82 (Fig. 9 K) made of analog.Aforesaid operations is finished the formation figure manufacture process shown in Fig. 9 A to Fig. 9 K.
At first, the size of the definite resistance monitoring graphics of necessary measurement (for example, distance P a=Pa1 between breakpoint appearance point and the witness mark line shown in Figure 4, Pa2, Pa3, under Pa4 and Pa5 or the reluctance head situation, the distance delta between magnetoresistive element part 51 polishing face P and the witness mark line between the opposite side edge).From the viewpoint of accurately measuring, wish during wafer processes, to carry out this measurement (for example, being right after after forming magnetoresistive element part 51 and resistance monitoring graphics 40).Can measure all modules of thin slice, but also can measure representational module, near the measured value of the module gained measured value can be used as.
Among the present invention, using as mentioned above, the resistance monitoring graphics carries out the cutting of reluctance head element heights and/or thin-film heads gap depth.Then, use above-mentioned resistance monitoring graphics 40 with reference to the process description of Figure 10, set up and stop to cut method constantly, this cutting reduces element heights.
(A) use first method of first and second resistance patterns 41 and 42
In above-mentioned Fig. 4, by with abrasive sheet process (step S10 and S11) to reduce direction when cutting of reluctance head element heights, the resistance monitoring graphics 40 that forms when wafer processes also is capped, the result reduces the surface area of resistance pattern 41 and resistance pattern 42.Then, when cutting advances to frame part on the resistance pattern 42 windows 43 polishing face P sides, when the distance P a between breakpoint appearance point and the witness mark line reduced to Pa1, breakpoint appeared at digital resistance (DR) Rd=Rd1 place, as shown in Figure 7.Detect this breakpoint then, and detect artifical resistance (AR) Ra=Ra1 (step S12) in this breakpoint appearance point place resistance pattern 41.
In addition, when cutting advances to frame part on the resistance pattern 42 windows 44 polishing face P sides, when the distance P a between breakpoint appearance point and the witness mark line reduces to Pa2, breakpoint appears at digital resistance (DR) Rd=Rd2 place, detects artifical resistance (AR) Ra=Ra2 (step the S13) (step 14) at breakpoint appearance point place.Subsequently, with the same manner, the distance P a that occurs between position and the witness mark line when breakpoint is Pa3, during Pa4 or the like (step S14), each moment (digital resistance value Rd=Rd3 that breakpoint occurs, Rd4 or the like), the analog electrical resistance Ra=Ra3 that detects at corresponding breakpoint place, Ra4 or the like (step S16).
When detecting 3 breakpoints, the analog electrical resistance Ra at these breakpoint places be used to predict the element heights cutting position (breakpoint occur between position and the witness mark line distance P a) between second sequence curve and the prognosis modelling resistance value Ra (step S15) of relation.
That is, artifical resistance Ra is made as Ra=A*Pa
2+ B*Pa+C (A, B, C are constants) here, when Pa=Pa1, during Pa=Pa2, during Pa=Pa3, substitution Ra=Ra1 in formula, Ra=Ra2, the actual measured value of Ra=Ra3.From the relevant A that obtains by these digital substitutions, in three equatioies of B and C value, determine A, the particular value of B and C, thus set up the second sequence equation Ra=APa
2+ BPa+C.
Then, the Pa in the distance objective value TA between cutting end position and the witness mark line (above-mentioned distance delta object component height MRh's and) the above-mentioned second sequence equation of predicting of substitution, and the analog electrical resistance Rf=Rf3 at calculating desired value TA place.And with this continue at interval the cutting.In this example, when the distance P a between breakpoint appearance point and the witness mark line is Pa4, next breakpoint appears.Punctual this analog electrical resistance Ra=Raf that detects when breakpoint occurs, for obtaining the up-to-date second sequence equation, when measured value is Pa=Pa2, during Pa=Pa3, during Pa=Pa4, substitution Ra=Ra2, Ra=Ra3, Ra=Ra4 is to the second sequence equation Ra=A*Pa
2+ B*Pa+C (step 17).
Relevant A from obtaining by new value replacement in three equatioies of B and C, obtains A, and the particular value of B and C is set up new second order equation Ra=A*Pa
2+ B*Pa+C, the second order equation Pa that the desired value TA substitution of distance has been upgraded between cutting end position and the witness mark line calculates the desired value TA new analog electrical resistance Raf=Rf4 in place.
If the actual measured value Rax of resistance pattern 41 reaches R4f, no matter this moment first resistance pattern 41 measured value whether reached the resistance value Rf4 of calculating, when reaching this value, stop to reduce in the cut cutting (step S21) of element heights.
In this example, during new analog electrical resistance Rf4 recomputated, the resistance R ax actual measured value that first resistance pattern 41 may occur reached analog electrical resistance Rf3.In this case, when reaching the Rf3 point, stop cutting (step S18).If, by the definite result of the new value that recomputates artifical resistance Rf4, new resistance value Rf4 is less than preceding Rf3 value, and the Rax actual measured value at some place first resistance pattern 41 that recomputates new analog electrical resistance Rf4 has surpassed new analog electrical resistance Rf4, stops cutting (step S22) (and can stop cutting immediately) when then simulating resistance value Rf3 point before the actual measured value Rax of first resistance pattern 41 reaches.
By above-mentioned definite method, can establish the moment that stops to cut and be not subjected to the influence of resistance pattern film thickness or change in resistance.And, because from the resistance value of first resistance pattern 41, can accurately be scheduled to reach the moment of cutting aim parameter, not only can carry out above-mentioned accurate cutting, and can make process automation.
(B) use second method of first and second resistance patterns 41 and 42
In accurately cutting, when the variation of wishing the analog electrical resistance near second order or when above, if the breakpoint distance is approaching, promptly use the Ra=B * Pa+C approximate value between two breakpoints also can accurately cut.Figure 11 is illustrated in to be used to set up in this cutting and stops to cut process constantly.In this case, when actual measured value Pa=Pa2 with the described equation of Ra=Ra2 substitution and during actual measured value Pa=Pa3 with the described equation of Ra=Ra3 substitution (step S30 and S31), and by about obtaining the particular value of B and C in two equatioies of the B that obtained and C value, these values are established straight line Ra=B * Pa+C (step S32).
Then, the desired value TA substitution of distance should be predicted the PA in the single order equation between cutting end position and the witness mark line, calculated the analog electrical resistance (step S35) at desired value TA place.Continue cutting during this period.When breakpoint some place that distance P a between position and the witness mark line equals Pa4 occurs and next breakpoint occurs, after analog electrical resistance Ra=Ra4 is detected at some place when breakpoint occurs, obtain up-to-date straight line, when actual measured value Pa is Pa3, with Ra=Ra3 value substitution straight line equation Ra=B * Pa+C, and when actual measured value Pa is Pa4, with Ra=Ra4 value substitution straight line equation Ra=B * Pa+C.Then, the relevant B that is obtained by new value substitution and two equatioies of C are determined the particular value of B and C, these values are set up new straight line Ra=B * Pa+C, behind the Pa of this new single order equation of desired value TA substitution of distance, calculate the analog electrical resistance Raf=Rf4 (step S35) at this desired value TA place between cutting end position and the witness mark line.The method of use analog electrical resistance Rf3 and Rf4 and the situation of the curve of order 2 are identical.
Judge to also have a kind of method for simplifying, wherein only judge Rf4, it is used unique criterion in judging.In this case,, calculate Rf4, and when the artifical resistance actual measured value surpasses this value, stop cutting (step S36) detecting the 4th breakpoint place.
(C) method of use second resistance pattern 42
Only use second resistance pattern 42 can establish the moment that stops to cut.Figure 12 is illustrated in to be used to establish in this cutting and stops to cut process constantly.
In this method, reaching before the point of element heights desired value, in the cutting region of describing by cutting position, the resistance value of this cutting position place resistance pattern 42 shows breakpoint, detect the cutting speed in the cutting region, and speed calculation reaches the required time of object component height thus, stops cutting when reaching this time.
Particularly, along with cutting (step S40 and S41) to reduce reluctance head element heights direction, established resistance monitoring graphics 40 also is cut during the wafer processes, and the surface area of resistance pattern 41 and resistance pattern 42 reduces (step S42).Be cut to the frame part on the resistance pattern 42 windows 43 polishing face P sides then, so when breakpoint distance between position and the witness mark line occurred and is decreased to Pa1, breakpoint (step S43) appearred in the place at the Rd=Rd1 point.
Then, cutting advances to frame part on the resistance pattern 42 windows 44 polishing face P sides, and when breakpoint distance P a between position and the witness mark line occurs and is decreased to Pa2, equals Rd2 point place at digital resistance value Rd and breakpoint (step S44) occurs.Then, cutting proceeds to frame part on the resistance pattern 42 windows 45 polishing face P sides, and when breakpoint distance P a between position and the witness mark line occurs and is decreased to Pa3, equals Rd3 point place at digital resistance value Rd and breakpoint (step S45) occurs.When recognizing that this breakpoint distance P a between position and the witness mark line occurs and become Pa3, begin to calculate milling time.
Then, along with cutting proceeds to frame part on the resistance pattern 42 windows 46 polishing face P sides, when breakpoint distance P a between position and the witness mark line occurs and becomes Pa3, equal Rd4 point place at digital resistance value Rd and breakpoint (step S47) occurs.When recognizing that this breakpoint distance P a between position and the witness mark line occurs and become Pa4, stop to calculate milling time (step S45).The time of calculating with this hairdo is by the milling time T43 that reaches in the cutting region that the breakpoint in resistance pattern 42 resistance change is described in the previous cutting region of object component height.
Then, calculate grinding rate S43=(P
a3-P
a4)/T
43(step S49).Owing to also can being treated to, grinding rate in the zone that reaches the object component height value is approximately equal to cutting speed S
43, except calculating the time quantum Tf (P that (step S50) reaches distance (object component height MRh and above-mentioned gap σ sum) desired value between cutting end position and the witness mark line
a4=TA)/S outside, set up timer so that stop cutting (step S51) when reaching this time quantum Tf.Behind the elapsed time Tf, stop cutting (step S52).If, then stop cutting immediately determining that by calculating time T f point place has reached this time T f.
In above another definite method, can establish the moment that stops to cut and be not subjected to the influence of film thickness or resistance pattern change in resistance.And, because the measurable moment that reaches desired value in stopping to cut not only can accurately be cut to the object component height, and can make process automation.
Above-mentioned explanation all is to cut under the situation of control with a resistance pattern, during by the grinding cutting module, as mentioned above, can pressurize to abrasive sheet, simultaneously with 3 points, the two ends of module and the core of module carry out independent controlled pressure according to the resistance value of resistance pattern, so that monitor cutting.Figure 13 shows cutting structure in this case, utilizes the module of cramp lapping plate, carries out grinding pressure in three places and controls separately.
Among Figure 13, resistance monitoring graphics 60L, 60C and 60R all have and above-mentioned resistance monitoring graphics 40 identical structures, and they are formed on the left end of module 70 to be cut, center and right-hand member.Resistance detecting circuit 61L, 61C and 61R detect resistance monitoring graphics 60L respectively, the analog electrical resistance of 60C and 60R and the circuit of digital resistance value, thereby contact resistance monitoring graphics 60L, the terminal of 60C and 60R. Digital signal processor 62L, 62C eliminates from relevant resistance monitoring graphics 60L with 62R, and noise and exceptional value in the signal of 60C and 60R analog electrical resistance and digital resistance value are converted into numerical data, and deliver to CPU (central processing unit) (CPU) 63.
For example, digital signal processor 62L, 62C and 62R obtain resistance detecting circuit 61L at given time durations, a plurality of samplings of 61C and 61R output signal, and the mean value of output analog electrical resistance and digital resistance value.Because owing to milled mixtures, mechanicalness noise, and the influence of electric noise, from resistance detecting circuit 61L, the output signal of 61C and 61R contains noise, sampling resistor testing circuit 61L, the output signal of 61C and 61R and with after its A/D conversion, they are through bandpass filtering (digital filtering), remove the defined amount sampled data from its numerical data maximal value end and minimum value end then, obtain mean value, then output from remaining data.
CPU (central processing unit) (CPU) 63 reading number signal processor (DSP) 62L, each output data of 62C and 62R, export organization of stres 65L to by input-output apparatus (I/O) 64,65C and 65R be as module 70 left ends, the desired value of center and right-hand member place grinding pressure.When stopping to cut, the end of output signal is to grinding control plate 66.
In module 70, about have the size difference between the end, it is changed by cut lengths and causes, and changes and cause that core is inhomogeneous by the condition that keeps anchor clamps 67 is installed.In the actual cut, beginning individual drive organization of stres 65L, 65C and 65R, independent control module 70 left ends, the grinding pressure of center and right-hand member, according to from resistance monitoring graphics 60L, the moment that breakpoint occurs in the digital resistance value that obtains among 60C and the 60R is carried out machining.
For example, use, five breakpoints are arranged,, before the 4th breakpoint occurs, must finish at least to judge that breakpoint goes out now because have desired value between the 4th and the 5th breakpoint as under the situation of above-mentioned resistance monitoring graphics.Particularly, necessary control module 70 left ends, center and right-hand member grinding pressure make and at first carried out coarse adjustment before second breakpoint occur, and according to these data, accurately regulate before the 3rd breakpoint occurs, and evenly cut whole surface then.
The left end of the actual measured value of actual range Pa between position and the witness mark line and artifical resistance Pa in module 70 appears in breakpoint, and be different between center and the right-hand member, and the above-mentioned approximated equation of substitution is used left end, the mean value of center and right-hand member.Therefore, as the example that stops cutting signal, at left end, the mean value of center and right-hand member artifical resistance Ra reaches left end, the mean value place of center and right-hand member desired value, and CPU (central processing unit) 63 output END signals are to grinding control plate 66.
Though above-mentioned explanation is under the situation that has five breakpoints, needn't do this restriction.And though above-mentioned explanation is to make example with the reluctance head element heights, it can identical mode be used for being cut under the thin-film heads situation setting of gap depth.
As mentioned above, first characteristics as the preferred embodiment of the present invention, in first invention that relates to the magnetic head manufacturing method that comprises reluctance head, along with making progress in the cutting that reduces on the reluctance head element heights direction, the surface area of first resistance pattern is almost linear to be reduced, and the surface area of second resistance pattern reduces in piecewise linearity mode almost.Utilize position that the second resistance pattern surface area change to show breakpoint as can be known, no matter whether reached cutting, changing the appearance of the point of interruption by detection resistance value can be easily and accurately determine this position.
Like this, first resistance pattern resistance value when appearance by getting in touch the second resistance pattern resistance change point of interruption and breakpoint occur can determine to finish to reduce moment of element heights cutting according to the resistance value of first resistance pattern.Do like this, the reluctance head element heights accurately can not only be cut to setting, be not subjected to the influence of film thickness and resistance pattern change in resistance, and can make process automation.
Particularly, the first resistance pattern resistance value when at least three breakpoints being determined breakpoint to occur in the second resistance pattern resistance change, the resistance value at these three breakpoint places is used to predict the curve of order 2 that concerns between the reluctance head element heights cutting position and the first resistance pattern resistance value, calculate the resistance value of object component height place first resistance pattern according to the curve of order 2 of being predicted, when the first resistance pattern actual measurement resistance value reaches this calculated resistance value, almost stop to reduce the cutting of element heights simultaneously, thereby can accurately cut.
As second characteristics of the preferred embodiment of the present invention, along with in the cutting progress that reduces on the thin-film heads gap depth direction, the surface area of first resistance pattern is almost linear to be reduced, and the surface area of second resistance pattern reduces in piecewise linearity mode almost.Utilize position that the second resistance pattern surface area change to show breakpoint as can be known, no matter whether reached cutting, changing the appearance of the point of interruption by detection resistance value can be easily and accurately determine this position.
Like this, first resistance pattern resistance value when appearance by getting in touch the second resistance pattern resistance change point of interruption and breakpoint occur can determine to finish reduce moment of gap depth cutting according to the resistance value of first resistance pattern.Do like this, the thin-film heads gap depth accurately can not only be cut to setting, be not subjected to the influence of film thickness and resistance pattern change in resistance, and can make process automation.
Particularly, the first resistance pattern resistance value when at least three breakpoints being determined breakpoint to occur in the second resistance pattern resistance change, the resistance value at these three breakpoint places is used to predict the curve of order 2 that concerns between the thin-film heads gap depth cutting position and the first resistance pattern resistance value, calculate the resistance value of target gap degree of depth place first resistance pattern according to the curve of order 2 of being predicted, when the first resistance pattern actual measurement resistance value reaches this calculated resistance value, almost stop to reduce the cutting of element heights simultaneously, thereby can accurately cut.
As the 3rd characteristics of the preferred embodiment of the present invention, along with in the cutting progress that reduces on the reluctance head element heights direction, the surface area of first resistance pattern is almost linear to be reduced, and the surface area of second resistance pattern reduces in piecewise linearity mode almost.Utilize position that the second resistance pattern surface area change to show breakpoint as can be known, no matter whether reached cutting, changing the appearance of the point of interruption by detection resistance value can be easily and accurately determine this position.
Like this, before the point that reaches magnetoresistive element height desired value, in the cutting region of being described by cutting position, the resistance value of this above-mentioned resistance pattern in cutting position place shows breakpoint, detect the cutting speed in the cutting region, and speed calculation reaches the required time of object component height thus.Do like this, the reluctance head element heights accurately can not only be cut to setting, be not subjected to the influence of film thickness and resistance pattern change in resistance, and can make process automation.
According to the 4th invention that relates to the magnetic head manufacturing method that is used to comprise thin-film heads, along with making progress in the cutting that reduces on the thin-film heads gap depth direction, the surface area of first resistance pattern is almost linear to be reduced, and the surface area of second resistance pattern reduces in piecewise linearity mode almost.Utilize position that the second resistance pattern surface area change to show breakpoint as can be known, no matter whether reached cutting, changing the appearance of the point of interruption by detection resistance value can be easily and accurately determine this position, because the breakpoint in the surface area shows as the breakpoint in the resistance change.
Like this, before the point that reaches thin-film heads gap depth desired value, in the cutting region of being described by cutting position, the resistance value of this above-mentioned resistance pattern in cutting position place shows breakpoint, detect the cutting speed in the cutting region, and speed calculation reaches the required time of the target gap degree of depth thus.Do like this, the thin-film heads gap depth accurately can not only be cut to setting, be not subjected to the influence of film thickness and resistance pattern change in resistance, and can make process automation.
In a word, in above-mentioned each embodiment,, can further improve cutting precision by providing the resistance monitoring graphics at each end of module.
Claims (20)
1. method that is used to process magnetic head comprises step:
On thin slice, form a plurality of magnetic heads with two-dimensional arrangement, comprise at least one reluctance head;
Downcut a module from thin slice, line spread a plurality of magnetic heads on it;
Cutting is partly arrived specified altitude as the reluctance head of the described reluctance head of a module;
To cut module and be separated into single magnetic head;
It is characterized in that, be used to monitor that the resistance monitoring graphics of element heights cutting comprises first resistance pattern and second resistance pattern, the surface area of first resistance pattern is with almost linear minimizing of cutting progress that reduces on the reluctance head element heights direction, and the surface area of second resistance pattern reduces in piecewise linearity mode almost with the cutting progress that reduces on the reluctance head element heights direction, the resistance monitoring graphics is formed on the thin slice module in described wafer processes, and it is characterized in that, determine the moment that the cutting of minimizing element heights in the described cutting finishes according to the resistance value of described resistance monitoring graphics.
2. the method that is used to process magnetic head as claimed in claim 1, it is characterized in that, the first resistance pattern resistance value is stated in this place when at least a plurality of breakpoints being determined breakpoint to occur in the described second resistance pattern resistance value, and it is characterized in that, predict relation between described reluctance head element heights cutting position and the described first resistance pattern resistance value by described a plurality of resistance values, establish stopping constantly of the described cutting that reduces element heights according to described relation.
3. the method that is used to process magnetic head as claimed in claim 1 is characterized in that described magnetic head is a combined record, and wherein thin film recording head is layered in and reproduces on the reluctance head.
4. the method that is used to process magnetic head as claimed in claim 1 is characterized in that, described resistance monitoring graphics is located at the two ends and the core of module.
5. the method that is used to process magnetic head as claimed in claim 2, it is characterized in that, the resistance value of first resistance pattern is stated in this place when at least three breakpoints being determined breakpoint to occur in the described second resistance pattern resistance change, and it is characterized in that, predict the curve of order 2 that concerns between described reluctance head element heights cutting position and the described first resistance pattern resistance value, determine that according to the curve of order 2 of being predicted object component height place states the resistance value of first resistance pattern, when the actual measured value of described first resistance pattern reaches described calculated resistance value, almost stop to reduce the cutting of the described cutting step of element heights simultaneously.
6. the method that is used to process magnetic head as claimed in claim 2 is characterized in that described magnetic head is a combined record, and wherein thin film recording head is layered in and reproduces on the reluctance head.
7. the method that is used to process magnetic head as claimed in claim 2 is characterized in that, described resistance monitoring graphics is located at the two ends and the core of module.
8. method that is used to process magnetic head comprises step:
On thin slice, form a plurality of magnetic heads with two-dimensional arrangement, comprise a thin-film heads;
Downcut a module from thin slice, line spread a plurality of magnetic heads on it;
Cutting is arrived prescribed depth as the described thin-film heads gap of a module;
To cut module and be separated into single magnetic head;
It is characterized in that, be used to monitor that the resistance monitoring graphics of gap depth cutting comprises first resistance pattern and second resistance pattern, the surface area of first resistance pattern is with almost linear minimizing of cutting progress that reduces on the thin-film heads gap depth direction, and the surface area of second resistance pattern reduces in piecewise linearity mode almost with the cutting progress that reduces on the reluctance head element heights direction, the resistance monitoring graphics is formed on the thin slice module in described wafer processes, and it is characterized in that, determine the moment that the cutting of minimizing gap depth in the described cutting finishes according to the resistance value of described resistance monitoring graphics.
9. the method that is used to process magnetic head as claimed in claim 8, it is characterized in that, the resistance value of first resistance pattern is stated in this place when at least a plurality of breakpoints being determined breakpoint to occur in the described second resistance pattern resistance value, and it is characterized in that, predict relation between described thin-film heads gap depth cutting position and the described first resistance pattern resistance value by described a plurality of resistance values, establish stopping constantly of the described cutting that reduces gap depth according to described relation.
10. the method that is used to process magnetic head as claimed in claim 8 is characterized in that described magnetic head is a combined record, and wherein thin film recording head is layered in and reproduces on the reluctance head.
11. the method that is used to process magnetic head as claimed in claim 8 is characterized in that, described resistance monitoring graphics is located at the two ends and the core of module.
12. the method that is used to process magnetic head as claimed in claim 9, it is characterized in that, the resistance value of first resistance pattern is stated in this place when at least three breakpoints being determined breakpoint to occur in the described second resistance pattern resistance change, and it is characterized in that, predict the curve of order 2 that concerns between described thin-film heads gap depth cutting position and the described first resistance pattern resistance value, determine that according to the curve of order 2 of being predicted target gap degree of depth place states the resistance value of first resistance pattern, when the actual measured value of described first resistance pattern reaches described calculated resistance value, almost stop to reduce the cutting of the described cutting step of gap depth simultaneously.
13. the method that is used to process magnetic head as claimed in claim 9 is characterized in that described magnetic head is a combined record, wherein thin film recording head is layered in and reproduces on the reluctance head.
14. the method that is used to process magnetic head as claimed in claim 9 is characterized in that, described resistance monitoring graphics is located at the two ends and the core of module.
15. a method that is used to process magnetic head comprises step:
On thin slice, form a plurality of magnetic heads with two-dimensional arrangement, comprise at least one reluctance head;
Downcut a module from thin slice, line spread a plurality of magnetic heads on it;
Cutting is partly arrived specified altitude as the reluctance head of the described reluctance head of a module;
To cut module and be separated into single magnetic head;
It is characterized in that, the resistance monitoring graphics is used to monitor the cutting of reluctance head element heights, described monitoring graphics comprises a resistance pattern, the surface area of this resistance pattern reduces in piecewise linearity mode almost with the cutting progress that reduces on the reluctance head element heights direction, the resistance monitoring graphics is formed on the thin slice module in described wafer processes, then, in described cutting step, before the point that reaches the described desired value of described reluctance head height place, in the cutting region of describing by cutting position, the resistance value that resistance pattern is stated in this cutting position place shows breakpoint, determine the cutting speed in the cutting region, and calculate the described required time of object component height that reaches by described cutting speed, almost with reach described time quantum simultaneously, stop to reduce the cutting of described element heights.
16. the method that is used to process magnetic head as claim 15 is characterized in that described magnetic head is a combined record, wherein thin film recording head is layered in and reproduces on the reluctance head.
17. the method that is used to process magnetic head as claim 15 is characterized in that, described resistance monitoring graphics is located at the two ends and the core of module.
18. a method that is used to process magnetic head comprises step:
On thin slice, form a plurality of magnetic heads with two-dimensional arrangement, comprise at least one thin-film heads;
Downcut a module from thin slice, line spread a plurality of magnetic heads on it;
Cutting is arrived prescribed depth as the gap of the described thin-film heads of a module;
To cut module and be separated into single magnetic head;
It is characterized in that, the resistance monitoring graphics is used to monitor the cutting of thin-film heads gap depth, described monitoring graphics comprises a resistance pattern, the surface area of this resistance pattern reduces in piecewise linearity mode almost with the cutting progress that reduces on the thin-film heads gap depth direction, the resistance monitoring graphics is formed on the thin slice module in described wafer processes, then, in described cutting step, before the point that reaches the described desired value of described thin-film heads gap depth place, in the cutting region of describing by cutting position, the resistance value that resistance pattern is stated in this cutting position place shows breakpoint, determine the cutting speed in the cutting region, and calculate by described cutting speed and to reach the described required time of object component height, and almost with reach described time quantum simultaneously, stop to reduce the cutting of described gap depth.
19. the method that is used to process magnetic head as claim 18 is characterized in that described magnetic head is a combined record, wherein thin film recording head is layered in and reproduces on the reluctance head.
20. the method that is used to process magnetic head as claim 19 is characterized in that, described resistance monitoring graphics is located at the two ends and the core of module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96123302 CN1154533A (en) | 1995-11-09 | 1996-11-08 | Method for fabricating magnetic head |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP290892/95 | 1995-11-09 | ||
| CN 96123302 CN1154533A (en) | 1995-11-09 | 1996-11-08 | Method for fabricating magnetic head |
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| Publication Number | Publication Date |
|---|---|
| CN1154533A true CN1154533A (en) | 1997-07-16 |
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|---|---|---|---|
| CN 96123302 Pending CN1154533A (en) | 1995-11-09 | 1996-11-08 | Method for fabricating magnetic head |
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| CN (1) | CN1154533A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111323055A (en) * | 2018-12-14 | 2020-06-23 | 丰田自动车株式会社 | Resolver |
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1996
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111323055A (en) * | 2018-12-14 | 2020-06-23 | 丰田自动车株式会社 | Resolver |
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