CN115435752A - Level detection device and level detection method - Google Patents

Level detection device and level detection method Download PDF

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Publication number
CN115435752A
CN115435752A CN202211367999.4A CN202211367999A CN115435752A CN 115435752 A CN115435752 A CN 115435752A CN 202211367999 A CN202211367999 A CN 202211367999A CN 115435752 A CN115435752 A CN 115435752A
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China
Prior art keywords
silicon wafer
carrier
level detecting
electronic gyroscope
level
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Pending
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CN202211367999.4A
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Chinese (zh)
Inventor
李�昊
刘永亮
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Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
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Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
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Application filed by Xian Eswin Silicon Wafer Technology Co Ltd, Xian Eswin Material Technology Co Ltd filed Critical Xian Eswin Silicon Wafer Technology Co Ltd
Priority to CN202211367999.4A priority Critical patent/CN115435752A/en
Publication of CN115435752A publication Critical patent/CN115435752A/en
Priority to TW112104094A priority patent/TW202326072A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C9/00—Measuring inclination, e.g. by clinometers, by levels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C9/00—Measuring inclination, e.g. by clinometers, by levels
    • G01C9/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The present disclosure relates to a level detecting apparatus and a level detecting method, the level detecting apparatus for detecting a levelness of a surface of a silicon wafer when the silicon wafer is in a semiconductor processing chamber, the level detecting apparatus including: an electronic gyroscope; and a carrier fixedly carrying the electronic gyroscope and placed on the surface of the silicon wafer during detection, wherein the size of the carrier carrying the electronic gyroscope in the vertical direction is configured so that the horizontal detection device does not interfere with the semiconductor processing chamber during detection. The level detection device can detect the levelness of the surface of the silicon wafer in the semiconductor processing chamber with the height limited in the internal space.

Description

Level detection device and level detection method
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to a level detection apparatus and a level detection method using the same.
Background
During the process of coating silicon wafers in a vapor deposition chamber, such as a conventional Chemical Vapor Deposition (CVD) chamber, it is necessary to ensure that the silicon wafers are always in a horizontal position so that the surfaces of the silicon wafers can be coated uniformly and completely.
Typically, levelness is measured using a level. However, for a vapor deposition chamber such as a CVD chamber, the height of the inner space thereof is limited, typically about 10mm, so that when a silicon wafer is located in the chamber, the height of the upper space thereof is difficult to allow a level of a general size to be placed on the surface of the silicon wafer, i.e., the level of the surface of the silicon wafer cannot be detected by using the level.
In addition, placing the level on the silicon wafer can also result in contamination by introducing impurities on the surface of the silicon wafer, and the level itself can cause damage to the surface of the silicon wafer. If the level ruler is placed on a tray for placing the silicon wafer for measurement, the measurement result cannot directly and accurately reflect the actual levelness condition of the surface of the silicon wafer. In addition, since the level is located in the chamber at the time of measurement, it is also difficult to obtain the result measured at that time by observation.
Disclosure of Invention
This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.
An object of the present disclosure is to provide a level detecting apparatus capable of detecting a levelness of a surface of a silicon wafer in a semiconductor processing chamber having a limited height of an inner space.
Another object of the present disclosure is to provide a level detecting apparatus capable of preventing contamination and damage to the surface of a silicon wafer.
Still another object of the present disclosure is to provide a level detecting apparatus capable of directly and accurately detecting an actual levelness of a surface of a silicon wafer.
It is still another object of the present disclosure to provide a level detecting device capable of easily and accurately acquiring a result measured at that time.
In order to achieve one or more of the above objects, according to an aspect of the present disclosure, there is provided a level detecting apparatus for detecting a levelness of a surface of a silicon wafer while the silicon wafer is in a semiconductor processing chamber, comprising: an electronic gyroscope; and a carrier fixedly carrying the electronic gyroscope and placed on the surface of the silicon wafer at the time of inspection,
wherein the size of the carrier carrying the electronic gyroscope in the vertical direction is configured so that the level detection device does not interfere with the semiconductor processing chamber during detection.
In the above level detecting device, the bearing member may be made of silicon carbide or silicon dioxide.
In the level detecting device described above, the upper surface of the carrier for carrying the electronic gyroscope and the lower surface for placing on the surface of the silicon wafer may both be horizontal planes.
In the above level detecting device, the electronic gyroscope may include a plurality of electronic gyroscopes.
In the above level detecting device, the carrier may have the same shape and size as the silicon wafer.
In the above-described level detecting apparatus, the electronic gyroscope may include four electronic gyroscopes, wherein the four electronic gyroscopes are uniformly fixed to the carrier in a circumferential direction of the carrier.
In the above-described level detecting apparatus, the carrier may have a regular triangle shape, and the electronic gyroscope includes three electronic gyroscopes, wherein one electronic gyroscope is fixedly carried at each corner of the regular triangle shape of the carrier.
In the above-described level detecting device, the electronic gyroscope may be fixed on the upper surface of the carrier or may be fixed in an embedded manner in the carrier.
In the above level detecting device, a display device configured to communicate with the electronic gyroscope to display the detected level in real time may be further included.
According to another aspect of the present disclosure, there is provided a level detecting method for detecting a level of a surface of a silicon wafer while the silicon wafer is in a semiconductor processing chamber, the level detecting method being performed using the level detecting apparatus according to any one of the preceding paragraphs.
According to the present disclosure, by providing the electronic gyroscope and the carrier fixedly carrying the same, and by configuring the size of the carrier carrying the electronic gyroscope in the vertical direction so that the level detection device does not interfere with the semiconductor processing chamber when detecting, it is possible to allow the level detection device to pass through the semiconductor processing chamber with the silicon wafer to detect the levelness of the surface of the silicon wafer when detecting, and to allow the result data measured by the level detection device to be easily and accurately acquired. In addition, by using silicon carbide or silicon dioxide for the carrier, contamination and damage on the surface of the silicon wafer can be avoided. Moreover, by placing the bearing piece on the surface of the silicon chip, the measured result can directly and accurately reflect the actual levelness condition of the surface of the silicon chip.
The above features and advantages and other features and advantages of the present disclosure will become more apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
The above and other objects, features and advantages of the present disclosure will be more readily understood by reference to the following detailed description of exemplary embodiments thereof taken in conjunction with the accompanying drawings. Throughout the drawings, identical or corresponding technical features or components will be denoted by identical or corresponding reference numerals. In the drawings:
fig. 1 schematically illustrates a level detection apparatus according to an embodiment of the present disclosure in a top view, wherein the level detection apparatus is placed on a surface of a silicon wafer to be detected;
FIG. 2 schematically illustrates the level detection device shown in FIG. 1 in a side view;
FIG. 3 schematically illustrates, in side view, the level detection apparatus shown in FIG. 1 in a semiconductor processing chamber;
FIG. 4 schematically illustrates a level detection apparatus in a top view, wherein the level detection apparatus is placed on a surface of a silicon wafer to be detected, according to another embodiment of the present disclosure;
FIG. 5 schematically illustrates the level detecting device shown in FIG. 4 in a side view; and
fig. 6 schematically shows a further fixing of the electronic gyroscope with respect to the carrier in a side view.
Detailed Description
The disclosure is described in detail below with the aid of exemplary embodiments with reference to the accompanying drawings. It is to be noted that the following detailed description of the present disclosure is intended for purposes of illustration only and is not intended to limit the present disclosure in any way.
According to an embodiment of the present disclosure, as shown in fig. 1 to 3, there is provided a level detecting apparatus 1 for detecting a levelness of a surface 21 of a silicon wafer 2 while the silicon wafer 2 is in a semiconductor process chamber 3.
The level detecting device 1 comprises an electronic gyroscope 11 and a carrier 12, wherein the carrier 12 fixedly carries the electronic gyroscope 12 and is placed on the surface 21 of the silicon chip 2 during detection, and the size of the carrier 12 carrying the electronic gyroscope 11 in the vertical direction is configured to ensure that the level detecting device 1 does not interfere with the semiconductor processing chamber 3 during detection.
Specifically, the electronic gyroscope 11 may be used to detect the angles of rotation about the X, Y, and Z axes of an object on which it is placed, i.e., a pitch angle of rotation about the X axis, a roll angle of rotation about the Y axis, and a yaw angle of rotation about the Z axis (with respect to the X, Y, and Z axes, see fig. 1). In this regard, the electronic gyroscope 11 may be used to detect or reflect the degree of tilt of the object on which it is placed, i.e., may reflect the levelness of the object, based on at least the pitch angle of rotation about the X-axis and the roll angle of rotation about the Y-axis.
Based on this, in the present disclosure, the electronic gyroscope 11 is used to detect the levelness of the silicon wafer surface by fixing the electronic gyroscope 11 to the surface 21 of the silicon wafer 2.
In the embodiment of the present disclosure, fixing the electronic gyroscope 11 with respect to the surface 21 of the silicon wafer 2 is achieved by fixedly supporting the electronic gyroscope 11 on the carrier 12. The carrier 12 is placed on the surface 21 of the silicon wafer 2 when the silicon wafer is to be introduced into the semiconductor processing chamber 3 for processing in order to allow the level detecting means 1 to detect after the silicon wafer 2 is introduced into the semiconductor processing chamber 3, whereby the electronic gyroscope 11 is fixed with respect to the surface of the silicon wafer by means of the carrier 12 placed on the surface of the silicon wafer, so that the levelness of the surface of the silicon wafer can be detected.
It is known that a common electronic gyroscope has a thickness of several millimetres, for example typically around 2 mm. Therefore, the use of an electronic gyroscope having such a size can allow the levelness of the silicon wafer surface to be detected in the semiconductor processing chamber 3 whose height of the internal space is limited. In this case, the carrier 12 carrying the electronic gyroscope 11 may be configured in size in the vertical direction so that the horizontal inspection device 1 does not interfere with the semiconductor processing chamber 3 at the time of inspection, that is, the horizontal inspection device 1 does not interfere with the semiconductor processing chamber 3 in the vertical direction throughout the process in which the silicon wafer 2 is conveyed on the tray 4 carrying it into the semiconductor processing chamber 3, travels in the semiconductor processing chamber 3, and exits from the semiconductor processing chamber 3, for example, by a conveying device such as a conveyor belt, and may normally pass in the semiconductor processing chamber 3 along with the silicon wafer 2, so as to normally perform inspection work.
In addition, since the carrier 12 of the level detection device 1 is directly placed on the surface 21 of the silicon wafer 2, the detected result can directly reflect the actual levelness of the silicon wafer surface. Moreover, the electronic gyroscope 11 can form the detected levelness result of the silicon wafer surface into data, so that the actual levelness condition can be easily and accurately reflected, and the problems of inconvenient observation, inaccurate observation result, difficult recording and the like caused by being in the semiconductor processing chamber 3 are solved.
It is understood that in the present disclosure, a semiconductor processing chamber may be any of a variety of chambers in which a semiconductor is processed, such as a CVD chamber, an atomic layer deposition chamber, or other chambers that require the surface of a semiconductor, such as a silicon wafer, to be in a horizontal position during processing.
The inspection process by the level inspecting apparatus 1 and the process of processing the silicon wafer, for example, CVD coating, are two separate processes. That is, the plating process and the inspection process are performed separately, and the inspection process may be performed before plating. In addition, it can be understood that the detection of the levelness of the surface of the silicon wafer actually reflects the detection of the levelness of a transmission device for transmitting the silicon wafer, such as a conveyor belt, so that the levelness of the transmission device can be adjusted according to the actual detection result. Therefore, for the inspection process, the level detecting device 1 may be first placed on the surface of the silicon wafer to be inspected, only the silicon wafer 2 on which the level detecting device 1 is placed is conveyed through the deposition chamber without performing the film coating, that is, with closing the nozzle, heater, etc. of the deposition chamber, thereby detecting the levelness of the surface of the silicon wafer 2, and the level of the conveying device is adjusted according to the detected result to allow the surface of the silicon wafer 2 to be in a horizontal position, so that a better film coating effect, that is, a film coating is uniformly coated on the surface of the silicon wafer with full coverage can be obtained when the film coating is performed.
In embodiments of the present disclosure, the carrier 12 may be made of silicon carbide or silicon dioxide.
Thus, when the carrier 12 is placed on the surface 21 of the silicon wafer 2, it does not introduce impurities on the surface of the silicon wafer to cause contamination. On the other hand, since the electronic gyroscope 11 is supported on the support 12 made of the above material, the problem that impurities may be introduced on the surface of the silicon wafer 2 to cause contamination when the electronic gyroscope 11 is directly placed on the surface 21 of the silicon wafer is also avoided. In addition, the material can not damage the surface of the silicon wafer when being placed on the surface of the silicon wafer.
It is contemplated that other types of materials that do not introduce impurities and cause damage to the silicon wafer surface may also be used to fabricate the carrier.
In the embodiment of the present disclosure, the upper surface 121 of the carrier 12 for carrying the electronic gyroscope 11 and the lower surface 122 for placing on the surface 21 of the silicon wafer 2 may both be horizontal planes.
In this case, the electronic gyroscope 11 directly carried on the upper surface 121 of the carrier 12 may be perpendicular with respect to the surface 21 of the silicon wafer 2 on which the carrier 12 is placed, and thus, the detection result thereof may directly and accurately reflect the levelness of the silicon wafer surface.
It will be understood that the upper surface 121 and the lower surface 122 of the carrier 12 may not be horizontal planes, and in this case, the electronic gyroscope 11 may be subjected to zero-resetting correction before starting detection, or an actual levelness result may be obtained directly from a difference between detection data before detection and detection data during detection.
In an embodiment of the present disclosure, the electronic gyroscope 11 may include one or more electronic gyroscopes.
A plurality of electronic gyroscopes may be provided for detecting levelness of a plurality of different positions of the surface 21 of the silicon wafer 2, respectively, and thus, actual levelness at different positions on the entire surface of the silicon wafer 2 may be reflected more comprehensively and accurately, so as to comprehensively evaluate the level condition of the surface 21 of the silicon wafer 2.
It is envisaged that the carrier 12 may have the same shape and dimensions as the silicon wafer 2. That is, the carrier 12 may have the same shape as the silicon wafer 2, i.e., a circular shape, and have the same size as the circular shape.
In this case, more accurate detection of the levelness of the entire surface 21 of the silicon wafer 2 can be achieved by fixedly carrying one electronic gyroscope at each of a plurality of different positions of the carrier 12.
For example, referring to fig. 1 and 2, the carrier 12 is the same in shape and size as the silicon wafer 2, and the electronic gyroscope 11 includes four electronic gyroscopes, wherein the four electronic gyroscopes are uniformly fixed to the carrier 12 in the circumferential direction of the carrier 12. This makes it possible to reflect the actual levelness of the surface 21 of the silicon wafer 2 more accurately.
As another embodiment of the present disclosure, as shown in fig. 4 and 5, the carrier 12 may have a regular triangle shape, and the electronic gyroscope 11 may include three electronic gyroscopes, wherein one electronic gyroscope is fixedly carried at each corner of the regular triangle shape of the carrier 12. Thus, the actual levelness of the surface 21 of the silicon wafer 2 can be more accurately judged by the levelness at three different positions on the surface 21 of the silicon wafer 2.
In an embodiment of the present disclosure, the electronic gyroscope 11 may be fixed on the upper surface 121 of the carrier 12, as shown in fig. 1 and 2 and fig. 4 and 5; or the electronic gyroscope 11 may be fixed in an embedded manner in the carrier 12, as shown in fig. 6.
It is envisaged that the electronic gyroscope 11 may be fixed to the upper surface 121 of the carrier 12 by gluing, or may be fixed to the upper surface 121 of the carrier 12 by soldering, or may be fixed to the upper surface of the carrier 12 by any other known means.
In addition, it is understood that the electronic gyroscope 11 may also be fixed in the carrier 12 in an embedded manner, for example, may be fixed in an embedded manner in a hole provided at the upper surface 121 of the carrier 12, whereby not only may the electronic gyroscope 11 be protected to some extent by the embedded mounting, reducing the risk of damage due to, for example, a collision, but also the size of the carrier 12 carrying the electronic gyroscope 11 in the vertical direction may be further reduced.
In the embodiment of the present disclosure, the level detecting device 1 may further include a display device (not shown) configured to communicate with the electronic gyroscope 11 to display the detected level in real time.
In this way, the change in the surface level of the silicon wafer 2 throughout its passage through the semiconductor processing chamber 3 can be visually observed on the display device. Therefore, the horizontal condition of the conveying device for conveying the silicon wafer or the bearing device for bearing the silicon wafer can be adjusted according to the observed condition, so that the surface of the silicon wafer is in a horizontal position, and better processing is allowed to be carried out.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (10)

1. A level detecting apparatus for detecting a levelness of a surface of a silicon wafer while the silicon wafer is in a semiconductor processing chamber, comprising: an electronic gyroscope; and a carrier fixedly carrying the electronic gyroscope and placed on the surface of the silicon wafer at the time of detection,
wherein the carrier carrying the electronic gyroscope is configured in a dimension in a vertical direction so that the level detection device does not interfere with the semiconductor processing chamber during detection.
2. The level detecting device according to claim 1, wherein the carrier is made of silicon carbide or silicon dioxide.
3. The level detecting apparatus according to claim 1 or 2, wherein an upper surface of the carrier for carrying the electronic gyroscope and a lower surface for placing on the surface of the silicon wafer are both horizontal planes.
4. The level detecting apparatus according to claim 1 or 2, wherein the electronic gyroscope includes a plurality of electronic gyroscopes.
5. The level detecting device according to claim 1 or 2, wherein the carrier has the same shape and size as the silicon wafer.
6. The level detecting device according to claim 5, wherein the electronic gyroscope includes four electronic gyroscopes, wherein the four electronic gyroscopes are uniformly fixed to the carrier in a circumferential direction of the carrier.
7. The level detecting device according to claim 1 or 2, wherein the carrier has a regular triangular shape and the electronic gyroscope comprises three electronic gyroscopes, wherein one electronic gyroscope is fixedly carried at each corner of the regular triangular shape of the carrier.
8. Level detecting device according to claim 1 or 2, characterized in that the electronic gyroscope is fixed on the upper surface of the carrier or is fixed in an embedded manner in the carrier.
9. The level detecting device according to claim 1 or 2, further comprising a display device configured to communicate with the electronic gyroscope to display the detected level in real time.
10. A level detecting method for detecting a levelness of a surface of a silicon wafer when the silicon wafer is in a semiconductor processing chamber, characterized in that the level detecting method is performed using the level detecting apparatus according to any one of claims 1 to 9.
CN202211367999.4A 2022-11-03 2022-11-03 Level detection device and level detection method Pending CN115435752A (en)

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CN202211367999.4A CN115435752A (en) 2022-11-03 2022-11-03 Level detection device and level detection method
TW112104094A TW202326072A (en) 2022-11-03 2023-02-06 Level detection device and level detection method

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204188188U (en) * 2014-11-25 2015-03-04 武汉科技大学 A kind of horizontal adjustment instrument measuring ground elevation
WO2016180829A1 (en) * 2015-05-11 2016-11-17 Velvet.Invest Device for horizontal positioning
CN208478308U (en) * 2018-08-16 2019-02-05 德淮半导体有限公司 Wafer grabbing device and semiconductor processing equipment
CN111323076A (en) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 Detection device and process chamber detection method
CN211978079U (en) * 2020-06-19 2020-11-20 恒星高新科技（新兴）有限公司 Intelligent electronic scale
CN213120525U (en) * 2020-11-12 2021-05-04 安图实验仪器(郑州)有限公司 Sample frame attitude detection system based on gyroscope sensor
CN114000192A (en) * 2021-10-29 2022-02-01 北京北方华创微电子装备有限公司 Semiconductor processing equipment and monitoring method of wafer position state
CN114353755A (en) * 2021-11-24 2022-04-15 国网浙江省电力有限公司宁波市奉化区供电公司 Line pole inclination detection device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204188188U (en) * 2014-11-25 2015-03-04 武汉科技大学 A kind of horizontal adjustment instrument measuring ground elevation
WO2016180829A1 (en) * 2015-05-11 2016-11-17 Velvet.Invest Device for horizontal positioning
CN208478308U (en) * 2018-08-16 2019-02-05 德淮半导体有限公司 Wafer grabbing device and semiconductor processing equipment
CN111323076A (en) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 Detection device and process chamber detection method
CN211978079U (en) * 2020-06-19 2020-11-20 恒星高新科技（新兴）有限公司 Intelligent electronic scale
CN213120525U (en) * 2020-11-12 2021-05-04 安图实验仪器(郑州)有限公司 Sample frame attitude detection system based on gyroscope sensor
CN114000192A (en) * 2021-10-29 2022-02-01 北京北方华创微电子装备有限公司 Semiconductor processing equipment and monitoring method of wafer position state
CN114353755A (en) * 2021-11-24 2022-04-15 国网浙江省电力有限公司宁波市奉化区供电公司 Line pole inclination detection device

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