CN115425379A - MEMS circulator, packaging method thereof and microwave component - Google Patents

MEMS circulator, packaging method thereof and microwave component Download PDF

Info

Publication number
CN115425379A
CN115425379A CN202211150524.XA CN202211150524A CN115425379A CN 115425379 A CN115425379 A CN 115425379A CN 202211150524 A CN202211150524 A CN 202211150524A CN 115425379 A CN115425379 A CN 115425379A
Authority
CN
China
Prior art keywords
mems
circulator
metal substrate
magnetic
magnetic shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202211150524.XA
Other languages
Chinese (zh)
Other versions
CN115425379B (en
Inventor
王伟强
汪蔚
周嘉
翟晓飞
田松杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HEBEI MEITAI ELECTRONIC TECHNOLOGY CO LTD
Original Assignee
HEBEI MEITAI ELECTRONIC TECHNOLOGY CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HEBEI MEITAI ELECTRONIC TECHNOLOGY CO LTD filed Critical HEBEI MEITAI ELECTRONIC TECHNOLOGY CO LTD
Priority to CN202211150524.XA priority Critical patent/CN115425379B/en
Publication of CN115425379A publication Critical patent/CN115425379A/en
Application granted granted Critical
Publication of CN115425379B publication Critical patent/CN115425379B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/32—Non-reciprocal transmission devices
    • H01P1/38—Circulators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0064—Packages or encapsulation for protecting against electromagnetic or electrostatic interferences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

The application is applicable to the technical field of microwave radio frequency devices, and provides an MEMS circulator, a packaging method thereof and a microwave component, wherein the MEMS circulator comprises: MEMS chip, metal substrate, magnetic steel and magnetic shield; the MEMS chip is positioned above the metal substrate; the magnetic steel is positioned above the MEMS chip; the magnetic shield is welded with the metal substrate by adopting a parallel seam welding process; the MEMS chip, the metal substrate and the magnetic steel are positioned in a space enclosed by the magnetic shielding cover and the metal substrate. The method can reduce the magnetic field interference of the MEMS circulator in the component system, prevent the magnetic steel thereof from interfering external magnetic conduction substances and prevent the MEMS circulator from being interfered by a peripheral magnetic field, and effectively improve the electrical property of the MEMS circulator.

Description

MEMS circulator, packaging method thereof and microwave component
Technical Field
The application belongs to the technical field of microwave radio frequency devices, and particularly relates to an MEMS circulator, a packaging method thereof and a microwave component.
Background
The traditional MEMS circulator is a three-port device, which is composed of a metal substrate, an MEMS chip, magnetic steel, and other parts. When the MEMS circulator is used with a component system in an integrated mode, a metal substrate of the MEMS circulator is bonded or welded with a box body of the component; the ports of the MEMS circulator are 2-4 ports, and can be lapped with peripheral microstrip lines with the same height as the bonding fingers of the MEMS circulator, and the lapping is usually carried out by adopting a gold wire bonding mode.
The magnetic steel is in an open and exposed state, and the magnetic field of the magnetic steel can influence components around the MEMS circulator, so that electromagnetic crosstalk occurs, and the electrical performance is deteriorated. The problems that the MEMS circulator is interfered by a magnetic field in a component system, the magnetic steel of the MEMS circulator interferes with an external magnetic substance, or the MEMS circulator is interfered by a peripheral magnetic field need to be solved.
Disclosure of Invention
In order to solve the problems in the related art, embodiments of the present application provide an MEMS circulator, a packaging method thereof, and a microwave device, which can reduce magnetic field interference of the MEMS circulator in a component system, prevent magnetic steel thereof from interfering with external magnetic conductive materials and prevent the MEMS circulator from being interfered by a peripheral magnetic field, and effectively improve the electrical performance of the MEMS circulator.
The application is realized by the following technical scheme:
in a first aspect, an embodiment of the present application provides a MEMS circulator, including: the MEMS chip, the metal substrate, the magnetic steel and the magnetic shield cover;
the MEMS chip is positioned above the metal substrate;
the magnetic steel is positioned above the MEMS chip;
the magnetic shielding cover is welded with the metal substrate together by adopting a parallel seam welding process; the MEMS chip, the metal substrate and the magnetic steel are positioned in a space enclosed by the magnetic shield and the metal substrate.
In a possible implementation manner of the first aspect, at least a portion of the edge of the metal substrate is stepped, and the magnetic shield is welded to the step of the metal substrate by using a parallel seam welding process.
In a possible implementation manner of the first aspect, the metal substrate includes a first region and a second region, the first region is used for placing the MEMS chip, the second region is used for placing the magnetic shielding case, and a thickness of the first region is greater than a thickness of the second region.
In a possible implementation manner of the first aspect, a length of the first region is greater than or equal to a length of the MEMS chip, and a width of the first region is the same as a width of the MEMS chip.
In one possible implementation form of the first aspect, the thickness of the second region is in a range of 0.08-0.12mm.
In a possible implementation manner of the first aspect, the surface of the metal substrate is subjected to nickel plating and then gold plating, the thickness of the nickel layer is 3-5um, and the thickness of the gold layer is not less than 1.5um;
and carrying out nickel plating treatment on the surface of the magnetic shield.
In a possible implementation manner of the first aspect, the material of the magnetic shield is kovar alloy or stainless steel.
In one possible implementation of the first aspect, a gap is provided between a sidewall of the MEMS chip and a sidewall of the magnetic shield.
In a second aspect, an embodiment of the present application provides a method for packaging a MEMS circulator, including:
sintering the MEMS chip on a metal substrate;
bonding the magnetic steel to the surface of the MEMS chip by using glue, and fully curing the glue;
placing a magnetic shield on the metal substrate, wherein the MEMS chip, the metal substrate and the magnetic steel are positioned in a space enclosed by the magnetic shield and the metal substrate;
and welding the magnetic shield and the metal substrate together by adopting a parallel seam welding process.
In a third aspect, an embodiment of the present application provides a microwave component, which is characterized by including the MEMS circulator according to any one of the first aspect.
It is understood that the beneficial effects of the second aspect can be referred to the related description of the first aspect, and are not described herein again.
Compared with the prior art, the embodiment of the application has the advantages that:
this application embodiment covers MEMS chip and magnet steel through the magnetic shield cover to adopt parallel seam welding technology with the magnetic shield cover with the metal substrate welding together can reduce the magnetic field interference of MEMS circulator in the subassembly system, prevents that its magnet steel from disturbing external magnetic conduction material and MEMS circulator and receiving the interference in peripheral magnetic field, effectively promotes the electrical property of MEMS circulator.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the specification.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a glue bonded MEMS circulator according to an embodiment of the present application;
FIG. 2 is a front view of a MEMS circulator provided by an embodiment of the present application;
FIG. 3 is a left side view of a MEMS circulator provided by an embodiment of the present application;
FIG. 4 is a top view of a MEMS circulator as provided by an embodiment of the present application;
FIG. 5 isbase:Sub>A cross-sectional view taken at A-A of FIG. 3 according to one embodiment of the present application;
FIG. 6 is a front view of a metal substrate provided by an embodiment of the present application;
fig. 7 is a top view of a metal substrate provided in an embodiment of the present application.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
As used in this specification and the appended claims, the term "if" may be interpreted contextually as "when", "upon" or "in response to" determining "or" in response to detecting ". Similarly, the phrase "if it is determined" or "if a [ described condition or event ] is detected" may be interpreted contextually to mean "upon determining" or "in response to determining" or "upon detecting [ described condition or event ]" or "in response to detecting [ described condition or event ]".
Furthermore, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used for distinguishing between descriptions and not necessarily for describing or implying relative importance.
Reference throughout this specification to "one embodiment" or "some embodiments," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather mean "one or more but not all embodiments" unless specifically stated otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.
The traditional magnetic steel of the MEMS circulator is in an open and exposed state, and the magnetic field of the traditional magnetic steel can affect components around the MEMS circulator, so that electromagnetic crosstalk occurs, and the electrical performance is deteriorated. In order to solve the problem that the MEMS circulator can be interfered by a magnetic field in a component system, the magnetic steel of the MEMS circulator interferes with an external magnetic substance, or the MEMS circulator is interfered by a peripheral magnetic field, the MEMS chip and the magnetic steel are covered by a magnetic shield cover.
Before the invention, the magnetic shielding cover can be installed on the MEMS circulator by adopting a glue bonding mode, as shown in figure 1, but in the test process, the glue is in a solid state after being solidified, and expands with heat and contracts with cold when the product is heated and cooled. Obviously, the difference between the thermal expansion coefficient of the glue and the thermal expansion coefficients of the MEMS circulator chip and the magnetic steel is large, so that large stress exists between the MEMS circulator chip and the magnetic shielding cover when the MEMS circulator chip is heated and cooled, and the performance of the MEMS circulator chip is changed if the MEMS circulator chip is light; too much stress also affects the long-term reliability of the product.
In order to reduce the stress effect of the adhesive on the MEMS circulator chip, a less-stressed adhesive, such as silicone rubber, is preferably selected. Therefore, the stress effect of the glue can be obviously reduced, but the bonding strength of the glue is low, and the glue cannot be used in the scenes of high frequency and large vibration.
The adhesive strength of the glue for bonding the magnetic shield can be obviously reduced when the glue is heated. The MEMS circulator product adopts a welding process during installation, the welding temperature is usually 180-210 ℃, and the strength of the glue can be rapidly and obviously reduced in the heated state. Although the bonding strength of the glue can be recovered after the normal temperature is recovered, if the product is heated for too long time at too high temperature, the strength of the glue can be irrecoverably damaged.
The present application thus provides a MEMS circulator that employs a parallel seam welding process to weld a magnetic shield to a metal substrate.
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 2 is a schematic structural diagram of a MEMS circulator according to an embodiment of the present disclosure. Referring to fig. 2-5, the MEMS circulator is described in detail as follows:
the MEMS circulator comprises: MEMS chip 100, metal substrate 200, magnetic steel 300, and magnetic shield 400.
The MEMS chip 100 is located above the metal substrate 200; the magnetic steel 300 is positioned above the MEMS chip 100; the magnetic shield 400 is welded with the metal substrate 200 by adopting a parallel seam welding process; the MEMS chip 100, the metal substrate 200, and the magnetic steel 300 are located in a space enclosed by the magnetic shield 400 and the metal substrate 200.
Illustratively, the magnetic shielding cover 400 is welded on the metal substrate 200 of the MEMS circulator by adopting a parallel seam welding process, so that the magnetic steel 300 of the MEMS circulator can be wrapped all around, the influence of the magnetic steel 300 on an external device is effectively shielded, the influence of an external magnetic field on the electromagnetic field of the MEMS circulator is isolated, and the magnetic shielding effect is realized.
Illustratively, the bonding pad 101 on the surface of the MEMS chip 100 is disposed on a step of the MEMS chip 100 for wire bonding, and bonding connection with other chips or circuit boards.
Illustratively, at least a portion of the edge of the metal substrate 200 is stepped, and the magnetic shield 400 is welded to the step of the metal substrate 200 using a parallel seam welding process.
Illustratively, the metal substrate 200 includes a first region for placing the MEMS chip 100 and a second region for placing the magnetic shield, and the thickness of the first region is greater than that of the second region, as shown in fig. 6 and 7.
Illustratively, the length of the first region is greater than or equal to the length of the MEMS chip 100, and the width of the first region corresponds to the same width of the MEMS chip 100.
Illustratively, the thickness of the second region is in the range of 0.08-0.12mm. Too large a thickness of the second region tends to result in a weak weld for parallel seam welding. When the magnetic shield 400 and the metal substrate 200 are welded together by adopting the parallel seam welding process, the thickness range of the second area can ensure that a firm metal welding spot is formed between the magnetic shield 400 and the metal substrate 200.
In one embodiment, the length direction of the metal substrate 200 is 0.6-0.8mm longer than the MEMS chip 100, and the single side of the bonding position of the metal substrate 200 and the magnetic shield 400 is about 0.2-0.3mm.
In one embodiment, the thickness of the first region, i.e., the portion of the metal substrate 200 in contact with the MEMS chip 100, is preferably 0.2-0.5mm. Moreover, the larger the size of the MEMS chip 100, the greater the thickness of the metal substrate 200 should be to effectively relieve the external stress applied to the MEMS chip 100. The first region and the second region of the metal substrate 200 form a step shape.
Generally, the thickness of the metal substrate 200 depends on the size of the MEMS circulator chip, and if the chip size is larger, a thicker carrier is used, so as to avoid using a "large and thin" substrate to generate a larger tensile stress, and the thickness is 0.3-0.5mm.
In order to ensure good welding effect, the welding can be carried out once, the welding is firm, the yield is high, the thickness of the substrate at the welding position cannot be too thick, and the thickness is 0.08-0.12mm. If the substrate is too thick, the bonding energy cannot penetrate at one time, which may cause a problem of weak bonding. Therefore, the requirement of the MEMS circulator chip stress is met, the parallel seam welding yield is considered, the step-shaped structure is adopted, and the requirement of the parallel seam welding process is met.
Illustratively, the surface of the metal substrate 200 is processed by nickel plating and then gold plating, the thickness of the nickel layer is 3-5um, and the thickness of the gold layer is not less than 1.5um; the surface of the magnetic shield case 400 is subjected to nickel plating. The Ni plating is performed for rust prevention, and the nickel plating and the gold plating of the metal substrate 200 are heated and melted together to form a firm metal alloy during parallel seam welding, thereby achieving welding firmness.
For example, the material of the magnetic shield 400 is kovar alloy or stainless steel. Both the two materials contain Fe element, namely, the two materials have ferromagnetism, so that the shielding of an electromagnetic field can be realized; in addition, only these two materials are suitable for parallel seam welding processes. For example, the copper cover plate has strong heat dissipation capability, which means that the welding heat generated during parallel seam welding can be rapidly dispersed, so that the heat cannot be concentrated at the welding point, the metal layer at the welding point cannot be melted, and finally the metal welding point cannot be realized.
Illustratively, the overall thickness e of the metal substrate 200 is determined according to the size of the MEMS circulator chip, while the overall thickness e of the metal substrate 200 is not less than 0.2mm.
Specifically, the magnetic shield 400 is made of ferromagnetic material, and the ferromagnetic material can achieve the magnetic shielding effect, and preferably, stainless steel or kovar alloy is used. The magnetic shield 400 is processed into a U shape by an integral punching, and the surface is plated with Ni for realizing a parallel seam welding process. The thickness b of the magnetic shield 400 is 0.2-0.3mm, and the height after bending is 0.2-0.3mm higher than the height of the magnetic steel 300, so that the magnetic shield cannot be in hard contact with the magnetic steel 300.
Illustratively, there is a gap c between the sidewalls of the MEMS chip 100 and the sidewalls of the magnetic shield 400. The clearance c is 0.1mm or more, preferably 0.1mm.
In one embodiment, the magnetic shield 400 is spaced from the top surface of the MEMS circulator chip by a distance f in the range of 0.1-0.2mm.
In one embodiment, the distance a between the inner surface of the magnetic shield 400 and the upper surface of the magnetic steel 300 is in the range of 0.1-0.2mm. The distance between the inner surface of the magnetic shield 400 and the cylindrical surface of the magnetic steel 300 cannot be less than 0.2mm.
In one embodiment, the magnetic shield 400 is formed by bending a magnetic shield cover plate, wherein a portion of the magnetic shield cover plate is bent integrally without a splicing gap, and two opposite surfaces are bent and spliced to form a splicing gap.
For example, in the embodiment of the present invention, the magnetic shield 400 and the metal substrate 200 are welded, and the former is usually made of kovar alloy or stainless steel, and the surface is plated with Ni; the latter adopts Kovar alloy material, and the surface is plated with Ni and Au. In parallel seam welding, a large amount of heat welds the magnetic shield 400 and the metal substrate 200 together, similar to the effect of steel electric welding, and therefore has a particularly high joining strength, can withstand high-strength, high-frequency impact, and has high reliability.
The MEMS circulator covers the MEMS chip 100 and the magnetic steel 300 through the magnetic shielding cover 400, so that the magnetic field interference of the MEMS circulator in a component system can be reduced, the magnetic steel 300 of the MEMS circulator is prevented from interfering external magnetic conduction substances and the MEMS circulator is prevented from being interfered by a peripheral magnetic field, and the electrical property of the MEMS circulator is effectively improved; and the magnetic shield 400 and the metal substrate 200 are welded together by a parallel seam welding process, so that the magnetic shield 400 and the metal substrate 200 can be connected with high reliability.
The embodiment of the application also provides a packaging method of the MEMS circulator, which comprises the following steps: the MEMS chip 100 is sintered onto the metal substrate 200, the magnetic steel 300 is adhered to the surface of the MEMS chip 100 with glue, and the glue is sufficiently cured. The magnetic shield 400 is placed on the metal substrate 200, and the MEMS chip 100, the metal substrate 200 and the magnetic steel 300 are located in a space enclosed by the magnetic shield 400 and the metal substrate 200. The magnetic shield 400 and the metal substrate 200 are welded together using a parallel seam welding process.
Illustratively, the MEMS chip 100 may be sintered to the metal substrate 200 using gold-tin solder.
The embodiment of the application also provides a microwave component, which comprises the MEMS circulator described in any one of the above embodiments.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the present disclosure, and are intended to be included within the scope thereof.

Claims (10)

1. A MEMS circulator, comprising: MEMS chip, metal substrate, magnetic steel and magnetic shield;
the MEMS chip is positioned above the metal substrate;
the magnetic steel is positioned above the MEMS chip;
the magnetic shielding cover is welded with the metal substrate together by adopting a parallel seam welding process; the MEMS chip, the metal substrate and the magnetic steel are positioned in a space enclosed by the magnetic shielding cover and the metal substrate.
2. The MEMS circulator of claim 1 wherein at least a portion of an edge of the metal substrate is stepped, the magnetic shield being welded to the step of the metal substrate using a parallel seam welding process.
3. The MEMS circulator of claim 2 wherein the metal substrate includes a first region for placement of the MEMS die and a second region for placement of the magnetic shield, the first region having a thickness greater than a thickness of the second region.
4. The MEMS circulator of claim 3 wherein a length of the first region is greater than or equal to a length of the MEMS chip, a width of the first region corresponding to a width of the MEMS chip.
5. The MEMS circulator of claim 3 wherein the second region has a thickness in the range of 0.08-0.12mm.
6. The MEMS circulator of claim 1 wherein the surface of the metal substrate is plated with nickel and then with gold, the nickel layer having a thickness of 3-5um and the gold layer having a thickness of not less than 1.5um;
and carrying out nickel plating treatment on the surface of the magnetic shield.
7. The MEMS circulator of claim 1 wherein the magnetic shield is made of kovar or stainless steel.
8. The MEMS circulator of claim 1 wherein a gap is provided between a sidewall of the MEMS die and a sidewall of the magnetic shield.
9. A method of packaging a MEMS circulator, comprising:
sintering the MEMS chip on a metal substrate;
bonding the magnetic steel to the surface of the MEMS chip by using glue, and fully curing the glue;
placing a magnetic shield on the metal substrate, wherein the MEMS chip, the metal substrate and the magnetic steel are positioned in a space enclosed by the magnetic shield and the metal substrate;
and welding the magnetic shield and the metal substrate together by adopting a parallel seam welding process.
10. A microwave component comprising a MEMS circulator as claimed in any one of claims 1 to 8.
CN202211150524.XA 2022-09-21 2022-09-21 MEMS circulator, packaging method thereof and microwave component Active CN115425379B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211150524.XA CN115425379B (en) 2022-09-21 2022-09-21 MEMS circulator, packaging method thereof and microwave component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211150524.XA CN115425379B (en) 2022-09-21 2022-09-21 MEMS circulator, packaging method thereof and microwave component

Publications (2)

Publication Number Publication Date
CN115425379A true CN115425379A (en) 2022-12-02
CN115425379B CN115425379B (en) 2024-02-06

Family

ID=84203724

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211150524.XA Active CN115425379B (en) 2022-09-21 2022-09-21 MEMS circulator, packaging method thereof and microwave component

Country Status (1)

Country Link
CN (1) CN115425379B (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316299A (en) * 1995-03-14 1996-11-29 Souzou Kagaku:Kk Electrostatic chuck
CN103647125A (en) * 2013-12-18 2014-03-19 成都致力微波科技有限公司 Unijunction microstrip circulator or microstrip isolator with magnetic shielding case
CN203596403U (en) * 2013-12-18 2014-05-14 成都致力微波科技有限公司 Unijunction microstrip circulator having magnetic shielding cover
CN205051872U (en) * 2015-10-27 2016-02-24 歌尔声学股份有限公司 MEMS microphone
US20170290207A1 (en) * 2016-03-31 2017-10-05 Apple Inc. Component Shielding Structures With Magnetic Shielding
CN110444846A (en) * 2019-02-22 2019-11-12 中国电子科技集团公司第五十五研究所 It is a kind of to inhibit intracavitary circulator that the structure with interior resonance occurs
CN110572763A (en) * 2019-10-22 2019-12-13 朝阳聚声泰（信丰）科技有限公司 small-size MEMS microphone with welded side wall
WO2020263018A1 (en) * 2019-06-28 2020-12-30 주식회사 아모센스 Electronic element assembly package, circuit board for electronic element module, and method for manufacturing same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316299A (en) * 1995-03-14 1996-11-29 Souzou Kagaku:Kk Electrostatic chuck
CN103647125A (en) * 2013-12-18 2014-03-19 成都致力微波科技有限公司 Unijunction microstrip circulator or microstrip isolator with magnetic shielding case
CN203596403U (en) * 2013-12-18 2014-05-14 成都致力微波科技有限公司 Unijunction microstrip circulator having magnetic shielding cover
CN205051872U (en) * 2015-10-27 2016-02-24 歌尔声学股份有限公司 MEMS microphone
US20170290207A1 (en) * 2016-03-31 2017-10-05 Apple Inc. Component Shielding Structures With Magnetic Shielding
CN110444846A (en) * 2019-02-22 2019-11-12 中国电子科技集团公司第五十五研究所 It is a kind of to inhibit intracavitary circulator that the structure with interior resonance occurs
WO2020263018A1 (en) * 2019-06-28 2020-12-30 주식회사 아모센스 Electronic element assembly package, circuit board for electronic element module, and method for manufacturing same
CN110572763A (en) * 2019-10-22 2019-12-13 朝阳聚声泰（信丰）科技有限公司 small-size MEMS microphone with welded side wall

Also Published As

Publication number Publication date
CN115425379B (en) 2024-02-06

Similar Documents

Publication Publication Date Title
KR100363776B1 (en) Ic chip package with directly connected leads
AU2011218651B2 (en) Leadframe package with integrated partial waveguide interface
EP1341228A2 (en) Electronic product with heat radiating plate
US6011303A (en) Electronic component
JPH05508259A (en) Metal electronic package with improved electromagnetic interference resistance
KR20010066939A (en) Semiconductor device and method of producing the same
KR20050001368A (en) Stacked-type semiconductor device
JPH0870084A (en) Semiconductor package and its preparation
EP1024507A1 (en) Ceramic electronic part
JP2002016175A (en) Tab tape with stiffener and semiconductor device using the same
US8134422B2 (en) Non-reciprocal circuit device
US7808339B2 (en) Non-reciprocal circuit element
CN115425379A (en) MEMS circulator, packaging method thereof and microwave component
US6791439B2 (en) Connection structure for high-frequency circuit substrate, manufacturing method thereof and high frequency circuit device
EP1211748A1 (en) Irreversible circuit element
JPH0157841B2 (en)
JP3555831B2 (en) Semiconductor device and electronic device
JPH08172019A (en) Inductance element
US7026720B2 (en) Flip-chip mounted integrated circuit card element
JPH05291425A (en) Semiconductor package and its production
JP4066353B2 (en) Non-reciprocal circuit element
JP2901941B2 (en) High frequency power semiconductor device
JPH1140708A (en) Semiconductor device
JP3473978B2 (en) Coining method for metal members
US6414383B1 (en) Very low magnetic field integrated circuit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant