CN115425124B - Preparation method of flip white light LED packaging structure - Google Patents
Preparation method of flip white light LED packaging structure Download PDFInfo
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- CN115425124B CN115425124B CN202211266781.XA CN202211266781A CN115425124B CN 115425124 B CN115425124 B CN 115425124B CN 202211266781 A CN202211266781 A CN 202211266781A CN 115425124 B CN115425124 B CN 115425124B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000000741 silica gel Substances 0.000 claims abstract description 65
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 65
- 239000003292 glue Substances 0.000 claims description 45
- 238000005520 cutting process Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000748 compression moulding Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000000499 gel Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention belongs to the technical field of white light LED packaging, and particularly relates to a preparation method of a flip white light LED packaging structure. According to the preparation method of the flip white light LED packaging structure, the fluorescent film is coated on the crystal placing plate, then the transparent silica gel is dotted on the fluorescent film, the LED chip is pressed down on the transparent silica gel, a layer of transparent silica gel can be formed between the LED chip and the fluorescent film, the LED chip and the fluorescent film are blocked, light attenuation caused by direct conduction of heat generated by the LED chip to the fluorescent film is avoided, the reflection area of blue light on the white gel is increased due to the arrangement of the transparent silica gel, the depth of a reflection cup formed by the white gel is increased, the reflection angle of the blue light is increased, and the brightness and the central light intensity of the LED are effectively improved.
Description
Technical Field
The invention belongs to the technical field of white light LED packaging, and particularly relates to a preparation method of a flip white light LED packaging structure.
Background
Light emitting diodes (Light Emitting Diode, abbreviated as LEDs) are widely used in the field of illumination, and the light in the field of illumination is generally white light, and the general method for realizing white light of a diode is to form a blue light chip firstly, then adding fluorescent powder into a packaging material during packaging, and the blue light emitted by the blue light chip excites the fluorescent powder in the packaging material to emit yellow light, green light, red light or mixed light of multiple colors, and the blue light and the excited light are mixed together to form white light.
The LED chip has various packaging structures, compared with a forward-mounted LED chip, the flip LED chip has larger luminous area and better optical performance under the same chip area, and has higher power conversion efficiency under a certain current range.
In the prior art, a traditional secondary curing adhesive film process is generally adopted to package the flip LED chip, and a secondary curing fluorescent powder adhesive film is directly adhered to the LED chip and is heated and cured, so that the LED packaging structure prepared by the process has the advantages that the fluorescent film is directly covered on the surface of the LED chip, the LED chip heats when working for a long time, heat is directly transmitted to the fluorescent film, the service life of the fluorescent film is reduced due to high temperature, and the light attenuation and the brightness of the LED are reduced; meanwhile, as the fluorescent film is directly covered on the surface of the LED chip, the reflecting angle of the light emitted by the LED chip is smaller, and the improvement of the brightness and the central light intensity of the LED is limited.
Disclosure of Invention
The invention aims to overcome the defects that in the prior art, a fluorescent film is directly covered on the surface of an LED chip in a flip-chip white light LED packaging process, so that light attenuation is caused, and the brightness and the central light intensity of the LED are limited to be improved, and further provides a preparation method of the flip-chip white light LED packaging structure.
A preparation method of a flip white LED packaging structure comprises the following steps:
step S1: coating fluorescent glue on the wafer placing plate;
step S2: pre-cutting the fluorescent glue, wherein a cutting channel formed by pre-cutting separates a plurality of fluorescent films on the fluorescent glue;
step S3: dispensing transparent silica gel on the upper side of the fluorescent film;
step S4: preparing an LED chip, wherein a positive electrode and a negative electrode are arranged at the bottom of the LED chip; the top of the LED chip is downward contacted with the transparent silica gel;
step S5: pressing down the LED chip, standing to enable the transparent silica gel to be filled between the LED chip and the fluorescent film, covering the periphery of the LED chip, covering the upper side of the fluorescent film and blocking the periphery of the fluorescent film by the edge of the cutting channel, wherein an oblique angle is formed between the upper part of the periphery of the LED chip and the edge of the cutting channel by the transparent silica gel;
step S6: baking the transparent silica gel to solidify the transparent silica gel;
step S7: attaching a blue film on one side of an electrode of the LED chip, separating the LED chip, the transparent silica gel and the fluorescent film on the crystal placing plate, and pouring the film;
step S8: the LED chip is fixedly crystallized on a substrate, and a positive electrode and a negative electrode at the bottom of the LED chip are respectively welded with a positive bonding pad and a negative bonding pad on the substrate;
step S9: filling white glue, wherein the white glue is filled between the side surface of the transparent silica gel and the substrate, and between the side surface of the fluorescent film and the substrate to form a reflecting cup;
step S10: and cutting the substrate by taking one LED chip as a unit to separate each LED chip so as to form a plurality of flip white LED packaging structures.
Further, in the step S2, when the fluorescent glue is precut, laser is used for cutting.
Further, in the step S3, when dispensing is performed on the upper side of the fluorescent film, the dispensing position is at the center of the fluorescent film.
Further, in the step S5, the LED chip is pressed down and then left to stand for 2 to 5 minutes.
Further, after the white glue is filled in the step S9, the method further includes the following steps: and performing compression molding and forming a lens, wherein the lens wraps the white glue and the fluorescent film on one side of the substrate on which the LED chip is mounted.
Further, the lens shape may be hemispherical, planar or angular thread, and the surface may be smooth or frosted.
Further, the thickness of the crystal placing plate is 300-1000 um, and the surface adhesion is 20-200 gf/25mm.
The flip white light LED packaging structure comprises an LED chip, a fluorescent film, transparent silica gel, white glue and a substrate, wherein the LED chip is positioned above the substrate, and a positive electrode and a negative electrode at the bottom of the LED chip are respectively welded with a positive bonding pad and a negative bonding pad at the upper side of the substrate; the transparent silica gel covers the upper side and the periphery of the LED chip, and chamfers are formed on the side surfaces of the LED chip in a manner that the upper part is wide and the lower part is narrow; the fluorescent film is positioned on the upper side of the transparent silica gel; the white glue is filled between the side face of the transparent silica gel and the substrate, and is filled between the side face of the fluorescent film and the substrate, so that a reflecting cup is formed.
The beneficial effects are that:
1. according to the preparation method of the flip white light LED packaging structure, the fluorescent film is coated on the crystal placing plate, then the transparent silica gel is dotted on the fluorescent film, the LED chip is pressed down on the transparent silica gel, a layer of transparent silica gel can be formed between the LED chip and the fluorescent film, the LED chip and the fluorescent film are blocked, light attenuation caused by direct conduction of heat generated by the LED chip to the fluorescent film is avoided, the reflection area of blue light on the white gel is increased due to the arrangement of the transparent silica gel, the depth of a reflection cup formed by the white gel is increased, the reflection angle of the blue light is increased, and the brightness and the central light intensity of the LED are effectively improved. According to the preparation method, through the arrangement of the pre-cut fluorescent glue, the cutting channel is formed on the fluorescent glue, when the transparent silica gel is extruded, the transparent silica gel can be prevented from continuing to flow due to the action of surface tension, the overflow surface formed by the transparent silica gel on the fluorescent glue is prevented from being too large, the transparent silica gel is extruded more easily to form an oblique angle, and the size of the oblique angle is controlled more easily; meanwhile, fixed identification points and positions are formed on the chip through pre-cutting, so that position identification can be effectively performed on the fluorescent glue, and packaging accuracy is ensured.
2. The preparation method adopts laser to perform pre-cutting, has good cutting quality, can form a smooth cutting channel, thereby effectively limiting the flow of transparent silica gel, has higher cutting speed compared with a mode of adopting an LED chip to be stuck on fluorescent glue for cutting, and has the advantages that the post-cutting needs to adopt blade water cutting or splitting cutting and needs to continuously perform visual alignment, and the laser pre-cutting effectively improves the packaging efficiency. The preparation method further comprises the steps of performing compression molding to form a lens and wrapping the white glue and the fluorescent film, so that the use efficiency and the luminous efficiency of light can be improved.
3. According to the preparation method, when the transparent silica gel is dispensed on the upper side of the fluorescent film, the dispensing position is arranged in the center of the fluorescent film, so that when the transparent silica gel is extruded, the transparent silica gel can uniformly cover the periphery of the LED chip and the upper side of the fluorescent film, and the LED packaging structure can emit light uniformly and consistently. In the step S5, after the LED chip is pressed down, the LED chip is kept stand for 2 to 5 minutes, so that the transparent silica gel can be further ensured to fully cover the periphery of the LED chip and the upper side of the fluorescent film.
Drawings
FIG. 1 is a schematic structural diagram of step S1 of the preparation method of the present invention;
FIG. 2 is a top view of the structure of step S2 of the preparation method of the present invention;
FIG. 3 is a schematic structural diagram of step S4 of the preparation method of the present invention;
FIG. 4 is a schematic structural diagram of step S5 of the preparation method of the present invention;
FIG. 5 is a schematic structural diagram of step S8 of the preparation method of the present invention;
FIG. 6 is a schematic structural diagram of step S9 of the preparation method of the present invention;
fig. 7 is a schematic diagram of a flip-chip white LED package structure according to the present invention.
Reference numerals: 1. placing a crystal plate; 2. fluorescent glue; 21. a fluorescent film; 3. transparent silica gel; 4. an LED chip; 5. a substrate; 6. white glue; 7. and a lens.
Detailed Description
In order to better understand the technical solutions in the present application, the following description will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are based on directions or positional relationships shown in the drawings, are merely for convenience of description and simplification of description, and do not indicate or imply that the apparatus or element to be referred to must have a specific direction, be constructed and operated in the specific direction, and thus should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The embodiment provides a preparation method of a flip white light LED packaging structure, which comprises the following steps:
step S1: coating the fluorescent glue 2 on the wafer placing plate 1;
referring to fig. 1, in the present embodiment, the thickness of the die-attach plate 1 is 300-1000 um, the adhesion force is 20-200 gf/25mm, so that the strength of the die-attach plate 1 can be ensured, and the fluorescent film 21 can be easily separated from the fluorescent glue 2 while the fluorescent glue 2 is effectively adsorbed.
Step S2: pre-cutting the fluorescent glue 2, wherein a plurality of fluorescent films 21 are separated on the fluorescent glue 2 by cutting channels formed by pre-cutting;
referring to fig. 2, in the present embodiment, a plurality of square fluorescent films 21 are formed by pre-cutting and separating the fluorescent glue 2 by laser, the fluorescent films 21 are distributed on the fluorescent glue 2 in a regular manner, and the shape and size of each fluorescent film 21 are uniform, so that the uniformity of the light emission of each LED package structure is ensured. And adopt laser to cut in advance, cutting quality is good, can form smooth cutting path to effectively restrict the flow of transparent silica gel, it is faster to cut the speed than adopting the mode that LED chip 4 pasted on fluorescent film 21 and cut again, and the back cutting needs to adopt blade water cutting or split cutting and need constantly to carry out the vision to put in place, and laser pre-cutting has effectively improved encapsulation efficiency.
Step S3: dispensing 3 dots of transparent silica gel on the upper side of the fluorescent film 21;
in this embodiment, the dispensing position of the transparent silica gel 3 is located at the center of the fluorescent film 21, so that when the transparent silica gel 3 is extruded, the transparent silica gel 3 can uniformly cover the periphery of the LED chip 4 and the upper side of the fluorescent film 21, and the LED package structure is ensured to emit light uniformly.
Step S4: referring to fig. 3, an LED chip 4 is prepared, and a positive electrode and a negative electrode are provided at the bottom of the LED chip 4; contacting the top of the LED chip downwards with the transparent silica gel 3;
step S5: referring to fig. 4, the LED chip 4 is pressed down and left still, so that the transparent silica gel 3 fills between the LED chip 4 and the fluorescent film 21, covers the periphery of the LED chip 4, covers the upper side of the fluorescent film 21 and is blocked by the edge of the dicing street around the fluorescent film 21, and the transparent silica gel 3 forms an oblique angle between the upper part of the periphery of the LED chip 4 and the edge of the dicing street;
in this embodiment, after the LED chip 4 is pressed down, it is allowed to stand for 2 to 5 minutes, so that it is further ensured that the transparent silica gel 3 sufficiently covers the periphery of the LED chip 4 and the upper side of the fluorescent film 21.
Step S6: baking the transparent silica gel 3 in an oven to solidify the transparent silica gel;
step S7: attaching a blue film on one side of an electrode of the LED chip 4, separating the LED chip 4, the transparent silica gel 3 and the fluorescent film 21 from the crystal placing plate 1, and pouring the film;
step S8: referring to fig. 5, the LED chip 4 is die-bonded onto the substrate 5, and the positive electrode and the negative electrode at the bottom of the LED chip 4 are respectively welded with the positive bonding pad and the negative bonding pad on the substrate 5;
step S9: referring to fig. 6, a white glue 6 is filled, the white glue 6 is filled between the side surface of the transparent silica gel 3 and the substrate 5, and a reflective cup is formed between the side surface of the fluorescent film 21 and the substrate 5;
step S10: and cutting the substrate 5 by taking one LED chip 4 as a unit to separate the LED chips 4, so as to form a plurality of flip-chip white light LED packaging structures.
According to the preparation method of the flip white light LED packaging structure, the transparent silica gel 3 is formed between the LED chip 4 and the fluorescent film 21, the LED chip 4 is blocked from the fluorescent film 21, light attenuation caused by direct conduction of heat generated by the LED chip 4 to the fluorescent film 21 is avoided, the reflection area of blue light on the white glue 6 is increased due to the arrangement of the transparent silica gel 3, the depth of a reflection cup formed by the white glue 6 is increased, the reflection angle of the blue light is increased, and the brightness and the central light intensity of the LED are effectively improved.
In addition, the pre-cut fluorescent glue 2 is arranged, a cutting channel is formed on the fluorescent glue, when the transparent silica gel is extruded, the transparent silica gel can be prevented from continuously flowing due to the action of surface tension, the overflow surface formed by the transparent silica gel on the fluorescent glue is prevented from being too large, the transparent silica gel 3 is extruded more easily to form an oblique angle, and the size of the oblique angle is controlled more easily; meanwhile, fixed identification points and positions are formed on the chip by pre-cutting, so that position identification can be effectively performed on the fluorescent glue 2, and packaging accuracy is ensured.
As a further improvement of the present embodiment, after the step S9 of filling the white glue 6, the method further includes the steps of: the molding is performed and a lens 7 is formed, the lens 7 wrapping the white glue 6 and the fluorescent film 21 on the side of the substrate 5 on which the LED chip 4 is mounted.
The lens 7 can be hemispherical, planar or angular thread, and the surface can be smooth or frosted; in this embodiment, the lens 7 is preferably a hemispherical lens 7 with a smooth surface, which can enhance the light use efficiency and the luminous efficiency.
Referring to fig. 7, the embodiment further provides a flip-chip white LED package structure prepared by the above method, which includes an LED chip 4, a fluorescent film 21, transparent silica gel 3, white glue 6, and a substrate 5, wherein the LED chip 4 is located above the substrate 5, and a positive electrode and a negative electrode at the bottom of the LED chip 4 are respectively welded with a positive pad and a negative pad at the upper side of the substrate 5; the transparent silica gel 3 covers the upper side and the periphery of the LED chip 4, and chamfers are formed on the side surfaces of the transparent silica gel, wherein the upper part of the transparent silica gel is wide, and the lower part of the transparent silica gel is narrow; the fluorescent film 21 is positioned on the upper side of the transparent silica gel 3; the white glue 6 fills the space between the side surface of the transparent silica gel 3 and the substrate 5, and fills the space between the side surface of the fluorescent film 21 and the substrate 5 to form a reflecting cup.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several equivalent substitutions and obvious modifications can be made without departing from the spirit of the invention, and the same should be considered to be within the scope of the invention.
Claims (6)
1. The preparation method of the flip white light LED packaging structure is characterized by comprising the following steps of:
step S1: coating the fluorescent glue (2) on the wafer placing plate (1);
step S2: pre-cutting the fluorescent glue (2), wherein a plurality of fluorescent films (21) are separated on the fluorescent glue (2) by cutting channels formed by pre-cutting;
step S3: dispensing transparent silica gel (3) on the upper side of the fluorescent film (21);
in the step S3, when dispensing is performed on the transparent silica gel (3) on the upper side of the fluorescent film (21), the dispensing position is at the center of the fluorescent film (21);
step S4: preparing an LED chip (4), wherein a positive electrode and a negative electrode are arranged at the bottom of the LED chip (4); contacting the top of the LED chip downwards with the transparent silica gel (3);
step S5: pressing down the LED chip (4) and standing to enable the transparent silica gel (3) to be filled between the LED chip (4) and the fluorescent film (21), covering the periphery of the LED chip (4), covering the upper side of the fluorescent film (21) and blocking the periphery of the fluorescent film (21) by the edge of the cutting channel, wherein an oblique angle is formed between the upper part of the periphery of the LED chip (4) and the edge of the cutting channel by the transparent silica gel (3);
step S6: baking the transparent silica gel (3) to solidify the transparent silica gel;
step S7: attaching a blue film on one side of an electrode of the LED chip (4), separating the LED chip (4), the transparent silica gel (3) and the fluorescent film (21) on the wafer placing plate (1), and pouring the film;
step S8: the LED chip (4) is fixedly crystallized on a substrate (5), and a positive electrode and a negative electrode at the bottom of the LED chip (4) are respectively welded with a positive bonding pad and a negative bonding pad on the substrate (5);
step S9: filling white glue (6), wherein the white glue (6) is filled between the side surface of the transparent silica gel (3) and the substrate (5), and between the side surface of the fluorescent film (21) and the substrate (5) to form a reflecting cup;
step S10: and cutting the substrate (5) by taking one LED chip (4) as a unit to separate the LED chips (4) so as to form a plurality of flip-chip white light LED packaging structures.
2. The method for manufacturing the flip-chip white LED package structure according to claim 1, wherein in the step S2, the fluorescent glue (2) is cut by laser when being pre-cut.
3. The method for manufacturing the flip-chip white LED package structure according to claim 1, wherein in the step S5, the LED chip (4) is pressed down and then left to stand for 2 to 5 minutes.
4. The method for manufacturing the flip-chip white LED package structure according to claim 1, further comprising the steps of, after filling the white glue (6) in the step S9: and performing compression molding and forming a lens (7), wherein the lens (7) wraps the white glue (6) and the fluorescent film (21) on the side of the substrate (5) on which the LED chip (4) is mounted.
5. The method for manufacturing the flip-chip white light LED package structure according to claim 4, wherein the lens (7) is hemispherical in shape and smooth in surface.
6. The method for manufacturing the flip-chip white light LED packaging structure according to claim 1, wherein the thickness of the die-setting plate (1) is 300-1000 um, and the surface adhesion is 20-200 gf/25mm.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106252475A (en) * | 2016-09-21 | 2016-12-21 | 深圳市兆驰节能照明股份有限公司 | CSP light source and manufacture method thereof |
| CN112951970A (en) * | 2020-12-31 | 2021-06-11 | 广东晶科电子股份有限公司 | Light-emitting device manufacturing method and light-emitting device |
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| WO2013005646A1 (en) * | 2011-07-01 | 2013-01-10 | シチズンホールディングス株式会社 | Method for manufacturing semiconductor light-emitting element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106252475A (en) * | 2016-09-21 | 2016-12-21 | 深圳市兆驰节能照明股份有限公司 | CSP light source and manufacture method thereof |
| CN112951970A (en) * | 2020-12-31 | 2021-06-11 | 广东晶科电子股份有限公司 | Light-emitting device manufacturing method and light-emitting device |
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