CN115411483A - Dual-mode orthogonal power synthesizer based on integrated passive device technology - Google Patents
Dual-mode orthogonal power synthesizer based on integrated passive device technology Download PDFInfo
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Abstract
The invention discloses a dual-mode orthogonal power combiner based on an integrated passive device technology, which comprises an orthogonal coupler and a balanced power combiner and is used for power combination of a high-efficiency and high-linearity high-frequency power amplifier. The invention is based on the integrated passive device technology on-chip integrated orthogonal coupler and balanced power synthesizer, utilizes the silicon-based process multilayer metal structure to realize the synthesis, phase shift and impedance transformation of orthogonal signals, and has the characteristics of small size and low insertion loss. The invention can ensure the power amplifier to have high power and high PAE output, and can effectively ensure the linearity of the power amplifier. The power combiner has implicit phase-shifting and power-combining structures, has independent impedance matching networks and phase-shifting paths, and can obviously improve the power additional efficiency without sacrificing the linearity.
Description
Technical Field
The invention relates to the field of high-frequency passive integrated circuits, in particular to a dual-mode orthogonal power synthesizer based on an integrated passive device technology.
Background
With the rapid development of wireless communication technology, a new generation of intelligent communication network requires a development target of realizing the fusion of a sensing function of communication and a mobile interconnection technology in a radio frequency millimeter wave band. Compound semiconductor integrated circuits represented by III-V materials are well suited for radio frequency applications because of good high frequency characteristics of the devices to be integrated and excellent substrate material characteristics, but have poor support for complex application systems and also have low device integration density. Although the integrated devices of the silicon-based semiconductor integrated circuit have high integration level and low cost, and can meet the requirements of a system on complex functions and intensive calculation, the performances of noise, power, dynamic range and the like are insufficient, moore's law has faced a limit, and the silicon-based semiconductor integrated circuit also faces a dilemma.
In order to realize the sensing capability of wireless communication, higher wireless signal power needs to be output, and a power synthesis technology is often adopted. Power combining techniques include spatial power combining and on-chip power combining. The on-chip power synthesis has small realization area and is more suitable for a semiconductor process full integration scheme. The transformer-based power synthesis technology is one of common on-chip power synthesis technologies, can flexibly regulate and control impedance transformation ratio by changing the turn ratio and the coupling coefficient of a primary coil and a secondary coil, realizes power synthesis while completing impedance transformation, and has more compact layout and lower loss compared with other types of power synthesizers (such as Wilkinson power synthesizers).
In order to simplify a circuit structure and improve power added efficiency PAE, a high-frequency power amplifier realized by adopting a compound semiconductor process mainly adopts a multi-stage single-ended output structure; a high frequency power amplifier implemented by using a silicon-based semiconductor process mainly adopts a multi-stage differential structure in order to increase power added efficiency and improve output power. With the adoption of millimeter wave integrated circuits in 5G/6G high-speed communication sensing applications, a final-stage stacked single-ended structure is adopted for a high-frequency power amplifier in a millimeter wave band in order to further improve output power and PAE. Such as power amplifier technology analysis published by Peter M. Asbeck et al in 2019 on 5G millimeter wave applications in MTT, and high dynamic range millimeter wave power amplifiers published by HUA WANG et al in JWM in 2021. However, with the change of application scenarios of communication sensing, the architecture research of the high-frequency power amplifier is continuously advanced to meet the requirements of the power amplifier for high power added efficiency and high power output, and the power amplifier should have higher linearity, power back-off efficiency and high reliability, and the output phase shift technology, the power synthesis technologies such as Doherty PA and RF PA DAC, etc. are proposed in succession, for example, the reliability research of the 5G millimeter wave power amplifier was proposed by Peter m. Asbeck et al in 2022. However, the high-frequency power amplifier has different design structures and different required power combining paths and modes, so a dual-mode power combining method suitable for multiple orthogonal signals is urgently needed to be provided to realize a millimeter wave power amplifier with high linearity and high efficiency.
Disclosure of Invention
The invention aims to provide a dual-mode orthogonal power synthesizer based on an integrated passive device technology, so as to overcome the defects in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
the invention discloses a dual-mode orthogonal power synthesizer based on an integrated passive device technology, which comprises an orthogonal coupler and a balanced power synthesizer connected with the orthogonal coupler;
the orthogonal coupler comprises a first transformer coil, a second transformer coil, a third transformer coil and a fourth transformer coil which are mutually nested and mutually coupled, one end of the first transformer coil and one end of the second transformer coil which are positioned on the periphery are high-frequency signal input ports, the other ends of the first transformer coil and the second transformer coil are connected with matching resistors, one end of the third transformer coil and one end of the fourth transformer coil which are positioned in the nesting are high-frequency input ports, and the other ends of the third transformer coil and the fourth transformer coil are connected with the balanced power combiner;
the balanced power synthesizer comprises a primary coil and a secondary coil, the primary coil is nested on the periphery of the secondary coil, two breakpoints of the primary coil are gathered and are respectively connected with a third transformer coil and a fourth transformer coil, and two breakpoints of the secondary coil are gathered and extend outwards to form an output port.
Preferably, the balanced power combiner is based on a transformer structure, the primary coil and the secondary coil are both octagonal spiral coils, the coils of the balanced power combiner are only overlapped with the terminal nodes of the four transformer coils of the orthogonal coupler in the vertical projection direction, and the coils of the balanced power combiner in the overlapped part are perpendicular to the running direction of the transformer coils of the orthogonal coupler.
Preferably, the orthogonal power combiner is implemented according to an integrated passive device technology of a metal interconnection process, and comprises three layers of metal, namely top metal, secondary top metal and secondary top metal; the other structures of the orthogonal coupler are all realized by secondary top layer metal except that the coil cross part is bridged by the secondary top layer metal and two through holes; except that the coil cross part is bridged by secondary top metal and two through holes, the balance power combiner is realized by the top metal.
Preferably, the phase of the input signals at the signal input terminals of the first transformer coil and the second transformer coil is different by 180 °, the phase of the input signals at the signal input terminals of the third transformer coil and the fourth transformer coil is different by 180 °, the phase of the input signals at the signal input terminals of the first transformer coil and the third transformer coil is different by 90 °, and the phase of the input signals at the signal input terminals of the second transformer coil and the fourth transformer coil is different by 90 °.
Preferably, the widths of the primary coil and the secondary coil are equal, and the distances between adjacent transformer coils are the same where the four transformer coils are nested and coupled with each other.
Preferably, the quadrature power combiner includes two operating modes, which are a single-ended mode and a differential mode, respectively, the single-ended mode uses a single quadrature coupler and a single balanced power combiner to form the quadrature power combiner, and the balanced power combiner combines a pair of differential signals from the quadrature coupler into a single-ended signal; the differential mode adopts two orthogonal couplers and two balanced power synthesizers to form two orthogonal power synthesizers which are symmetrical up and down, and two pairs of differential signals are synthesized into a pair of differential signals to be output in a current synthesis mode.
Preferably, in the single-ended mode, the four input signals of the quadrature power combiner are respectively from single-ended output stages of four single-ended power amplifiers PA1, PA2, PA3, and PA4, and have equal amplitudes and phase relationships: the PA1 phase is respectively orthogonal to the PA3 and PA4 signals, the PA3 phase is respectively orthogonal to the PA1 and PA2 signals, the PA2 phase is respectively orthogonal to the PA3 and PA4 signals, and the PA4 phase is respectively orthogonal to the PA1 and PA2 signals.
Preferably, in the differential mode, the eight input signals of the quadrature power combiner are respectively from differential output stages of four differential power amplifiers PA1, PA2, PA3, and PA4, and have equal amplitudes and 90 ° phase intervals.
The invention has the beneficial effects that: the invention discloses a dual-mode orthogonal power synthesizer based on an integrated passive device technology, which comprises an orthogonal coupler and a balanced power synthesizer and is used for power synthesis of a high-efficiency and high-linearity high-frequency power amplifier. Compared with the traditional orthogonal signal power synthesizer, the structure for realizing the nested balanced power synthesizer of the orthogonal coupler on the chip based on the integrated passive device technology has the advantages of symmetrical and compact structure and small realization area; the synthesizer has the advantages of wide frequency response, low insertion loss and the like in performance. The invention adopts the integrated passive device technology, utilizes the multi-layer metal structure characteristic of the silicon-based process, manufactures the orthogonal coupler and the balanced power synthesizer on the chip, realizes the synthesis function of orthogonal power signals, and has the characteristic of implicit output phase shift. The matching network of the power combining structure has independent impedance matching and phase shifting paths, and PAE under high power and low power can be improved remarkably without sacrificing linearity. This configuration is insensitive to load impedance variations and works well under load mismatch conditions. Therefore, it is not necessary to place an isolator between the power combiner and the antenna. Compared with an eight-path orthogonal power synthesizer based on a transformer, the novel synthesizer structure can flexibly adapt to a single-ended or differential power synthesis mode; the synthesizer can be flexibly combined to configure a power synthesis network; and has a smaller implementation structure. The invention can ensure the power amplifier to have high power and high PAE output, and can effectively ensure the linearity of the power amplifier.
Drawings
Fig. 1 is a layout of an orthogonal power combiner according to an embodiment of the present invention;
FIG. 2 is a layout of an orthogonal coupler according to an embodiment of the present invention;
FIG. 3 shows S-parameter simulation results of an orthogonal coupler according to an embodiment of the present invention;
fig. 4 is a layout of a balanced power combiner according to an embodiment of the present invention;
FIG. 5 shows S-parameter simulation results of a balanced power combiner according to an embodiment of the present invention;
fig. 6 is a layout of a single-ended composite structure of an orthogonal power combiner according to an embodiment of the present invention;
fig. 7 is a diagram of a single-ended combining path of a quadrature power combiner according to an embodiment of the present invention;
fig. 8 is a simulation result of single-ended synthesis S-parameter of the quadrature power combiner according to the embodiment of the present invention;
fig. 9 is a layout of a differential synthesis structure of an orthogonal power combiner according to an embodiment of the present invention;
fig. 10 is a diagram of the differential combining a path of the quadrature power combiner according to the embodiment of the present invention;
fig. 11 is a diagram of the differential combining B path of the quadrature power combiner according to the embodiment of the present invention;
fig. 12 is a three-dimensional layout of an orthogonal power combiner according to an embodiment of the present invention;
in the figure: 1-a first transformer coil, 2-a second transformer coil, 3-a third transformer coil, 4-a fourth transformer coil, 5-a primary coil, 6-a secondary coil, 7-an output port, 8-a balanced power combiner, 9-a quadrature coupler and 10-a matching resistor.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood, however, that the detailed description herein of specific embodiments is intended to illustrate the invention and not to limit the scope of the invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Referring to fig. 1 and 12, an embodiment of the present invention provides a dual-mode quadrature power combiner based on an integrated passive device technology, including a quadrature coupler 9 and a balanced power combiner 8 connected to the quadrature coupler 9.
The quadrature coupler 9 comprises a first transformer coil 1, a second transformer coil 2, a third transformer coil 3, a fourth transformer coil 4 and two matching resistors 10 which are nested and coupled with each other. One end of the first transformer coil 1 is a high-frequency signal input port, and the other end of the first transformer coil is connected with a matching resistor 10; one end of the second transformer coil 2 is a high-frequency signal input port, and the other end of the second transformer coil is connected with a matching resistor 10; one end of the third transformer coil 3 is a high-frequency signal input port, and the other end of the third transformer coil is connected with one end of a primary coil 5 on the balanced power synthesizer; one end of the fourth transformer coil 4 is a high-frequency signal input port, and the other end of the fourth transformer coil is connected with the other end of the primary coil 5 on the balanced power combiner. The direction of one end of the high-frequency signal input port of the first transformer coil 1 is vertical to the direction of one end of the high-frequency signal input port of the second transformer coil 2; the direction of one end of the high-frequency signal input port of the third transformer coil 3 is vertical to the direction of one end of the high-frequency signal input port of the fourth transformer coil 4;
the balanced power combiner comprises a primary coil 5 and a secondary coil 6; the primary coil 5 is nested at the periphery of the secondary coil 6 in a symmetrical mode, two breakpoints of the primary coil 5 are gathered and are respectively connected with ports of a third transformer coil 3 and a fourth transformer coil 4 of the orthogonal coupler 9, and two breakpoints of the secondary coil 6 are arranged in the direction far away from the two breakpoints of the primary coil 5 and extend outwards to form an output port 7. The balanced power synthesizer converts a pair of differential signals from the orthogonal coupler into output differential signals after flexible impedance transformation; on the other hand, the balanced power combiner can combine a pair of differential signals from the orthogonal coupler into a single-ended signal to realize conversion from balanced input to unbalanced output. If the transformer is assumed to be an ideal transformer, the input impedance of the differential input is
Wherein n is the turn ratio of the secondary coil to the primary coil in the balanced power combiner,
is the output impedance of the single-ended output. By reasonably designing the turn ratio and the coupling coefficient, the impedance can be flexibly transformed. In this embodiment, the turns ratio
。
The orthogonal power combiner comprises three layers of metal, namely top metal, secondary top metal and secondary top metal; the quadrature power combiner 9 is implemented by secondary top metal except that the coil cross is bridged by secondary top metal and two via holes; except that the coil is bridged by secondary top metal and two through holes at the crossed position, the balance power combiner is realized by the top metal; the coils of the balanced power combiner are overlapped with four tail end branches of the orthogonal coupler 9 in the vertical projection direction, and the coils of the balanced power combiner and the coils of the orthogonal coupler at the overlapped part are perpendicular to each other.
The tail ends of the secondary coils 6 of the balanced power synthesizer 8 are gathered to form a signal output port 7; in the high-frequency input signal input ports of the first transformer coil 1, the second transformer coil 2, the third transformer coil 3 and the fourth transformer coil 4 of the orthogonal coupler 9, the phase difference of the input signals of the first transformer coil 1 and the second transformer coil 2 is 180 degrees, the phase difference of the input signals of the third transformer coil 3 and the fourth transformer coil 4 is 180 degrees, the phase difference of the input signals of the first transformer coil 1 and the third transformer coil 3 is 90 degrees, and the phase difference of the input signals of the second transformer coil 2 and the fourth transformer coil 4 is 90 degrees.
The following is to perform specific case implementation on the quadrature coupler and the balanced power combiner, and then to respectively describe a single-ended synthesis specific implementation method and a differential synthesis specific implementation method of the dual-mode quadrature power combiner.
In the embodiment, the substrate material is a high-resistance silicon substrate, and NiCr TFR thin film resistors, TSV grounding holes and three layers of interconnection metal are manufactured on the basis of semiconductor processes such as exposure, development, coating, diffusion and etching of an integrated passive device technology. The top metal and the secondary top metal are both made of copper and have the conductivity of copper; the thickness of the top layer metal is 3.4 um, the thickness of the next top layer metal is 0.85 um, and the thickness of the next top layer metal is 0.09 um; the top layer metal and the secondary top layer metal are crossed through an air bridge structure, and the relative dielectric constant is 1; the filling medium between the secondary top layer metal and the secondary top layer metal is silicon dioxide, the relative dielectric constant is 4.33, and the thickness of the filling layer is 1.542 um. The thickness of the NiCr TFR film is 0.06um. In the embodiment, the central working frequency points are all 60 GHz.
The quadrature coupler shown in fig. 2 combines four quadrature input signals into a pair of differential signals, the four input signals being equal in amplitude and having a particular phase arrangement. The coils of the four signal input ports are perpendicular to each other to reduce the coupling with the upper layer metal routing. In this embodiment, the single-ended impedance of the single-ended signal input terminal is 25 ohms, the two matching resistors are 43 ohms, and the differential impedance of the differential signal output terminal is 100 ohms. By reasonably adjusting the length of the transformer coil and the coupling strength between the transformer coil and the transformer coil, impedance transformation, amplitude balance and phase orthogonality can be simultaneously realized at a specific working frequency point. Fig. 3 shows simulation results of S parameters of the quadrature coupler, where at a central frequency of 60 GHz, an insertion loss of an output signal is about-1.1 dB, an amplitude imbalance is about 0.1 dB, a phase difference between an input port of the first transformer coil 1 and an input port of the second transformer coil 2 is about 178.9 °, a phase difference between an input port of the third transformer coil 3 and an input port of the fourth transformer coil 4 is about 179.1 °, a phase difference between an input port of the first transformer coil 1 and an input port of the third transformer coil 3 is about 88.3 °, a phase difference between an input port of the second transformer coil 2 and an input port of the fourth transformer coil 4 is about 88.6 °, and a quadrature phase imbalance is about 1.4 °.
A balanced power combiner as shown in fig. 4 combines a pair of differential signals from a quadrature coupler into a single-ended signal. The primary coil has 1 turn, the secondary coil has 1 turn, the widths of the primary coil and the secondary coil are equal, and the distances between adjacent coils are the same. Two break points of the primary coil are arranged towards the inside of the coil and serve as differential signal input ports. In this embodiment, the differential input impedance is 160 ohms and the single-ended output impedance is 115 ohms. Fig. 5 shows the simulation results of the S-parameters of the balanced power combiner, with an output return loss of about-32.29 dB and an insertion loss of about-0.38 dB at a center frequency of 60 GHz.
The following describes specific implementation methods of the quadrature power combiner in the single-ended mode and the differential mode, respectively.
Fig. 6 is a layout of a single-ended combining structure of an orthogonal power combiner according to an embodiment of the present invention. The quadrature power combiner consists of a quadrature coupler and a balanced power combiner. Fig. 7 is a path diagram of a single-ended combining structure of a quadrature power combiner according to an embodiment of the present invention. The four input signals are respectively from single-ended output stages of four single-ended power amplifiers PA1, PA2, PA3 and PA4, the amplitudes are equal, and the phase relation is as follows: the phase of PA1 is orthogonal to the signals of PA3 and PA4 respectively, the phase of PA3 is orthogonal to the signals of PA1 and PA2 respectively, the phase of PA2 is orthogonal to the signals of PA3 and PA4 respectively, and the phase of PA4 is orthogonal to the signals of PA1 and PA2 respectively. The input impedance of the four single-ended input signals is 25 ohms, the differential output impedance of the orthogonal power combiner is 100 ohms, and the resistance values of the two matched loads are both 12 ohms. Fig. 8 shows simulation results of S parameters of single-ended synthesis according to an embodiment of the present invention, and it can be seen that, at a central frequency point of 60 GHz, the insertion loss of each output signal is about-1.55 dB, the return loss of the signal output terminal is about-30.72 dB, the amplitude imbalance is about 0.06 dB, the phase difference of the quadrature ports is 89.89 °, and the phase imbalance is about 0.11 °.
Fig. 9 is a layout of a differential combining structure of an orthogonal power combiner according to an embodiment of the present invention, where two orthogonal couplers and two balanced power combiners form two orthogonal power combiners that are symmetric in an up-down direction, and two pairs of differential signals are combined into one pair of differential signals by means of current combining and then output. Fig. 10 and fig. 11 are two differential combining structure path diagrams of the quadrature power combiner according to the embodiment of the present invention. The eight input signals come from the differential output stages of four differential power amplifiers PA1, PA2, PA3 and PA4 respectively, the amplitudes are equal, the phases are distributed at intervals of 90 degrees, the phase combination mode is flexible, and the method is not limited to two typical modes: the reference phase of the LuA output end of the power amplifier is 45 degrees, and the combination mode I is as follows: output ends Qnu and Ipd of the power amplifier with 45-degree phase are respectively connected with the LuA and LuB ends of the power synthesizer; output ends Qpu and Ind of 135-degree phases of the power amplifier are respectively connected with ends LdB and LdA of the power synthesizer; the output ends Qnd and Ipu of 225-degree phase of the power amplifier are respectively connected with the ends of the power synthesizer RuA and RuB; the output terminals Qpd, inu of the 315 ° phase of the power amplifier are connected to the RdB, rdA terminals of the power combiner, respectively. And a second combination mode in sequence: output ends Qnu and Ipd of the power amplifier with 45-degree phase are respectively connected with ends LuA and LuB of the power synthesizer; output ends Qpu and Ind of 135-degree phases of the power amplifier are respectively connected with ends LdA and LdB of the power synthesizer; the output ends Qnd and Ipu of 225-degree phase of the power amplifier are respectively connected with the ends of the power synthesizer RuA and RuB; the output ends Qpu and Inu of 315-degree phase of the power amplifier are respectively connected with the ends RdA and RdB of the power synthesizer. Wherein, I and Q distribution represents I path signal, Q path signal, n and p represent + and-, u and d represent up and down, respectively, of differential signal, L and R represent left and right sides of coupler.
Specifically, in the implicit output phase shift and power combining structure, in the low power mode, in order to save direct current energy, one branch is closed, and a power signal flows through the other branch. The impedance mode of the power signal flowing through the branch is optimally matched and therefore has a high output impedance, thereby increasing the ratio of the radio frequency output power to the dissipated direct current Power (PAE) of that mode. When the coupling structure works in a high-power mode, the power signal is divided, positive and negative 45-degree phase shifting is respectively carried out, and the divided power signal flows through two branches of the coupling structure. After the signals are simultaneously amplified, the phase is shifted back. So that they lead to the combination at the output. The unique feature of this new structure is that the two paths have completely independent impedance matching networks. The two separate paths can provide different output impedances according to the high and low power mode needs without losing the required phase balance. In the low power mode, one branch is turned off and the impedance at the PA output of the other branch is individually optimized for that power mode, thereby achieving improved PAE in that power mode. In the high power mode, both branches are required to be fully open to provide sufficient output power. Since the impedance of one branch has been adjusted for optimum low power operating mode performance, the high impedance nature of this mode causes the power amplifier branch to exhibit gain compression; while the other power amplifier branch exhibits gain expansion prior to power gain compression. When two power amplifier branches are combined, the associated third order intermodulation distortion (IMD 3) products cancel each other at certain power levels, and neither the power gain compressed branch nor the power gain extended branch produces an unwanted IMD3. Thus, the linearity of the power amplifier is significantly improved while the load line of the power amplifier is further adjusted to enhance PAE.
Secondly, the dual-mode orthogonal power combiner based on the integrated passive device technology has a symmetrical balanced structure. The structure has small dependence on the accuracy of the distributed components participating in matching and is insensitive to the impedance change of the power synthesizer caused by frequency change, so that the bandwidth of the power amplifier is expanded. In addition, the dual-mode power combiner based on the integrated passive device technology is processed by adopting a semiconductor manufacturing process and is integrated in the high-frequency power amplifier through a heterogeneous integration method, and the consistency and the reliability of an integrated system are superior to those of the traditional organic laminated board packaging process. Finally, the synthesizer adopts a high-resistance silicon substrate material, so that the power synthesizer is low in manufacturing cost, small in insertion loss and wide in frequency response, and the linearity and the efficiency of the power amplifier are further improved.
The above description is intended to be illustrative of the preferred embodiment of the present invention and should not be taken as limiting the invention, but rather, the invention is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (8)
1. A dual-mode orthogonal power synthesizer based on an integrated passive device technology is characterized in that: the power combiner comprises a quadrature coupler and a balanced power combiner connected with the quadrature coupler;
the orthogonal coupler comprises a first transformer coil, a second transformer coil, a third transformer coil and a fourth transformer coil which are mutually nested and mutually coupled, one end of the first transformer coil and one end of the second transformer coil which are positioned on the periphery are high-frequency signal input ports, the other ends of the first transformer coil and the second transformer coil are connected with matching resistors, one end of the third transformer coil and one end of the fourth transformer coil which are positioned in the nested parts are high-frequency input ports, and the other ends of the third transformer coil and the fourth transformer coil are connected with the balanced power synthesizer;
the balanced power synthesizer comprises a primary coil and a secondary coil, the primary coil is nested on the periphery of the secondary coil, two breakpoints of the primary coil are gathered and are respectively connected with a third transformer coil and a fourth transformer coil, and two breakpoints of the secondary coil are gathered and extend outwards to form an output port.
2. A dual-mode quadrature power combiner based on integrated passive device technology, as claimed in claim 1, wherein: the balanced power combiner is based on a transformer structure, the primary coil and the secondary coil are octagonal spiral coils, the coils of the balanced power combiner are only overlapped with the tail end support sections of the four transformer coils of the orthogonal coupler in the vertical projection direction, and the coils of the balanced power combiner in the overlapped part are perpendicular to the transformer coils of the orthogonal coupler.
3. A dual-mode quadrature power combiner based on integrated passive device technology, as claimed in claim 1, wherein: the orthogonal power combiner is realized according to the integrated passive device technology of a metal interconnection process, and comprises three layers of metal, namely top metal, secondary top metal and secondary top metal; the other structures of the orthogonal coupler are all realized by secondary top layer metal except that the coil cross part is bridged by the secondary top layer metal and two through holes; except that the coil cross part is bridged by secondary top metal and two through holes, the balance power combiner is realized by the top metal.
4. A dual-mode quadrature power combiner based on integrated passive device technology, as claimed in claim 1, wherein: the phase difference between the input signals of the signal input ends of the first transformer coil and the second transformer coil is 180 degrees, the phase difference between the input signals of the signal input ends of the third transformer coil and the fourth transformer coil is 180 degrees, the phase difference between the input signals of the signal input ends of the first transformer coil and the third transformer coil is 90 degrees, and the phase difference between the input signals of the signal input ends of the second transformer coil and the fourth transformer coil is 90 degrees.
5. A dual-mode quadrature power combiner based on integrated passive device technology, as claimed in claim 1, wherein: the widths of the primary coil and the secondary coil are equal, and at the positions where the four transformer coils are mutually nested and mutually coupled, the distances between the adjacent transformer coils are the same.
6. A dual-mode quadrature power combiner based on integrated passive device technology as claimed in claim 1, wherein: the quadrature power synthesizer comprises two working modes, namely a single-ended mode and a differential mode, the single-ended mode adopts a single quadrature coupler and a single balanced power synthesizer to form the quadrature power synthesizer, and the balanced power synthesizer synthesizes a pair of differential signals from the quadrature coupler into a single-ended signal; the differential mode adopts two orthogonal couplers and two balanced power synthesizers to form two orthogonal power synthesizers which are symmetrical up and down, and two pairs of differential signals are synthesized into a pair of differential signals to be output in a current synthesis mode.
7. A dual-mode quadrature power combiner based on integrated passive device technology, as claimed in claim 6, wherein: in the single-ended mode, four input signals of the quadrature power combiner are respectively from single-ended output stages of four single-ended power amplifiers PA1, PA2, PA3, and PA4, the amplitudes are equal, and the phase relationship is: the PA1 phase is respectively orthogonal to the PA3 and PA4 signals, the PA3 phase is respectively orthogonal to the PA1 and PA2 signals, the PA2 phase is respectively orthogonal to the PA3 and PA4 signals, and the PA4 phase is respectively orthogonal to the PA1 and PA2 signals.
8. A dual-mode quadrature power combiner based on integrated passive device technology, as claimed in claim 6, wherein: in the differential mode, eight input signals of the orthogonal power combiner are respectively from differential output stages of four differential power amplifiers PA1, PA2, PA3 and PA4, the amplitudes are equal, and the phases are distributed at intervals of 90 degrees.
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