CN115406856A - Heat radiation detection type bionic infrared sensing element and preparation method thereof - Google Patents
Heat radiation detection type bionic infrared sensing element and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a heat radiation detection type bionic infrared sensing element and a preparation method thereof, wherein the preparation method comprises the following steps: the device comprises a porous inner core absorption layer, an absorption layer peripheral film, a transparent quartz tube, a quartz tube wall bionic infrared sensing film and a piezoelectric film which are sequentially arranged from inside to outside; the porous core absorption layer is composed of polydimethylsiloxane, a curing agent and SiO 2-5um in diameter which are arranged on a steel wire 2 The absorbing layer outer peripheral film and the porous core absorbing layer are made of the same material, namely 3um SiO 2 The microspheres are dispersed in a polydimethylsiloxane substrate, and the bionic infrared sensing film on the wall of the quartz tube is an infrared sensing film with a dome-like structure and is coated on the outer wall of the transparent quartz tube; piezoelectric filmThe film is packaged at the top of the quartz tube; the invention has the advantages that: the detection sensitivity of the infrared signal is improved, the response time is prolonged, and the infrared detection sensor is suitable for performing remote detection operation under any weather environment.
Description
Technical Field
The invention relates to the technical field of infrared detection, in particular to a heat radiation detection type bionic infrared sensing element for detecting an infrared signal and a preparation method thereof.
Background
The infrared detection type sensor is widely applied to the fields of military, medical service, industrial production, meteorology and the like due to good universality, environmental adaptability and stronger anti-interference capability. The working principle of the infrared sensor is that a sensitive element is prepared on the basis of metal sheets or semiconductor film materials such as antimony, nickel and the like, the physical properties of the material are changed due to the temperature change caused by the absorption of infrared radiation, and then the absorbed infrared radiation is determined by measuring the change of physical parameters so as to realize the remote detection of an object.
The processing capacity of the infrared detection system on the current market to the infrared signals is limited by the signal strength, the detection sensitivity of a high-efficiency and sensitive infrared signal receiving and processing and amplifying system is low, and the response time is long, so that how to improve the sensing sensitivity of the infrared sensing system and the sensing capacity of ultra-far weak signals is an important problem to be faced by the current infrared detection type sensing element.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a thermal radiation detection type bionic infrared sensor element and a manufacturing method thereof, which are used to solve the problems of low detection sensitivity and long response time of signal receiving and processing of the existing infrared detection type sensor.
The invention provides a heat radiation detection type bionic infrared sensing element, which comprises: the device comprises a porous inner core absorption layer, an absorption layer peripheral film, a transparent quartz tube, a quartz tube wall bionic infrared sensing film and a piezoelectric film which are sequentially arranged from inside to outside;
the porous inner core absorption layer is made of polydimethylsiloxane and polydimethylsiloxane arranged on the steel wireAgent and SiO 2-5um in diameter 2 The microspheres are composed of Polydimethylsiloxane (PDMS), a curing agent and SiO with the diameter of 2-5um 2 The mass fractions of the microspheres are 57.5-62.5 wt% of PDMS, 4.0-6.25 wt% of curing agent and SiO 2 :31.25-38.5wt％；
The absorbing layer outer peripheral film and the porous core absorbing layer are made of the same material, namely 3um SiO 2 The microspheres are dispersed in a polydimethylsiloxane matrix (in a mass ratio of 1; the porous inner core absorption layer is filled in the transparent quartz tube, and forms an upper chamber and a lower chamber together with the bottom of the quartz tube and the piezoelectric film, and the lower chamber and the porous inner core absorption layer are filled with water, so that the volume change caused by temperature change is converted into the volume change of liquid (water) filled in the lower chamber and the porous inner core absorption layer;
the bionic infrared sensing film on the quartz tube wall is an infrared sensing film with a dome-like structure and is coated on the outer wall of the transparent quartz tube; the piezoelectric film connected with the read information is packaged at the top of the quartz tube;
wherein, a plurality of convex outer edge convex hulls are evenly distributed on the bionic infrared sensing film on the quartz tube wall, the outer edge curve is a fitting curve of a receptor imitating a Germination beetle dome structure, and the curve formula is as follows:
f outer (x) = a1 x ^ (6) + a2 x ^ (5) + a3 x ^ 4) + a4 x ^ (3) a5 x ^ (2) + a6 x + a7
Wherein x is more than or equal to 0 and less than or equal to 10,
wherein x is not less than 0 and not more than 10, a1= -1.421e-03a2= -2.11e-02, a3= -1.08e-01, a4= -4.14e-02, a5= -6.52e-01, a6= -2.24e-01, a7= -4.6715.
As a preferable structure of the invention, the inside of the porous core absorption layer is a columnar pore cavity with the diameter of 100-250 um.
The invention also aims to provide a preparation method of the bionic infrared sensing film of the quartz tube wall, which comprises the following specific steps: coating photoresist on a silicon wafer substrate at a low rotation speed of 500r/min-600r/min for 30-50s by using a self-rotating spin coater, and switching to a high rotation speed of 1500r/min-1800r/min for 30-50s; spreading the photoresist into a layer of uniform film under the action of centrifugal force, and then placing the silicon wafer after photoresist homogenization in a vacuum drying oven, and keeping the temperature at 50-80 ℃ for 15-20 minutes; placing the film in an ultraviolet lamp for 5-10min, and exposing the silicon wafer subjected to the previous drying process for 50-70 s; placing the exposed silicon wafer in a vacuum drying oven, and keeping the temperature of 80-95 ℃ for 15-20 minutes; placing the silicon wafer after post-baking treatment in a developing solution for developing for 20-50 s; then washing the developed silicon wafer with deionized water for 3-5 times to remove residual stains on the surface; drying the sample by using a blower at normal temperature; obtaining a silicon wafer template with a Germination beetle dome receptor structure; adding 100mL of water and absolute ethyl alcohol (in a volume ratio of 1-1; then preparing a first mold-inverting reagent (between 1 and 4 in a mass ratio of 3; dripping a first mold-reversing reagent on a silicon wafer template (which is slightly thick) by using a glass rod, standing for 10-15 minutes to ensure that the first mold-reversing reagent is fully immersed in the structure of the template and is uniformly spread, placing the silicon wafer template in an electric heating air blowing drying box, setting the temperature to be 60-75 ℃, solidifying for 2-3 hours, taking out a sample, taking the sample off the template, and performing secondary mold reversing by using the sample as an intermediate template; and (3) dripping the secondary mould-reversing reagent on the intermediate template by using a glass rod, standing for 10-20 minutes to ensure that the secondary mould-reversing reagent is fully immersed in the template structure and is uniformly spread, placing the template structure in an electric heating air blast drying box, setting the temperature to be 80-90 ℃, curing for 2-3 hours, taking out a sample, and removing the sample from the intermediate template to obtain the dome-like structure film completely consistent with the surface structure of the silicon wafer.
The invention also aims to provide a preparation method of the porous core absorption layer, which comprises the following specific steps: first, 100mL of a mixed solution of water and absolute ethanol (volume ratio between 1A plurality of 100-250um steel wires are inserted into the top end of the die after the top end of the die is dried, and the steel wires are uniformly distributed in the sponge sheet as much as possible; then using 5.75g-6.25g PDMS as main agent, 0.4g-0.625g curing agent and 3.125g-3.85g SiO 2-5um in diameter at room temperature 2 Preparing an injection molding reagent from microspheres, uniformly stirring the microspheres by using a glass rod, placing the microspheres in a vacuum box, using a vacuum pump, controlling the vacuum degree to be between-0.7 MPa and-0.5 MPa, keeping the vacuum degree for 30 to 40 minutes, removing bubbles and taking out the microspheres; slightly scratching an adhesive layer between the sponge sheet and the quartz tube mold by using a dissecting blade, adding a reagent into the quartz tube mold, then sticking the sponge sheet to the top end of the quartz tube mold, finally placing the mold in a vacuum box, opening a vacuum pump, controlling the vacuum degree to be-0.7 MPa to-0.5 MPa, keeping the vacuum degree for 30min to 40min, removing bubbles, and taking out the mold; placing the mixture in an electric heating air blast drying oven, setting the temperature to be 80-90 ℃, and curing for 2-3 hours; finally obtaining a cylindrical cavity with the diameter of 100-250 um; and coating the antireflection film on the outer wall of the packaged quartz tube, coating the antireflection film on the outer surface of the porous kernel absorption layer, and finally filling the porous kernel absorption layer in the packaged quartz tube.
The working principle of the heat radiation detection type bionic infrared sensing element is as follows:
when infrared radiation is transmitted to the surface of the infrared sensing element, the infrared radiation can efficiently pass through the interface between the atmospheric environment and the gradient refractive index of the bionic infrared sensing film on the quartz tube wall, and meanwhile, the hard outer wall isolates the pressure exchange inside and outside the bionic infrared sensing element structure, so that the internal pressure signal of the structure can be fully ensured to be absorbed by the soft signal output end and penetrate through the quartz tube wall to enter the inner core, the porous inner core absorption layer can inhibit reflection at the moment to enable a large amount of infrared light waves to rapidly enter the absorption layer, and SiO dispersed in the PDMS base absorption layer at the moment 2 The microspheres can fully absorb infrared rays and cause the volume expansion of the absorption layer to further cause the change of the internal pore diameter and convert the change into a hydraulic signal, so that the micron pore diameter in the absorption layer is reduced to the size range (0.2-20 um) with strong capillary action, and therefore under the two-layer pressurization mechanism, the piezoelectric film at the top end of the liquid pressure compression element amplifies the infrared signals and outputs electric signals to be transmitted outTo a display system.
The invention has the advantages and positive effects that:
1. the pit receptor of the sensing element based on the beetle gerbil in the chest cheek pit has the working characteristics of high sensitivity, high stability and quick response to infrared light, so that the detection sensitivity to infrared signals is improved, the response time is prolonged, and the sensing element is suitable for the infrared detection type sensor to carry out remote detection operation in any climatic environment.
2. The sensor based on the dome shape in the chest and the cheek pit of the beetle gerdina has the characteristics of high sensitivity, high stability and the like to infrared light, and because the expansion of the volume pump of the absorption layer and the increase of the capillary suction force are almost instantaneous, the element can obviously improve the detection sensitivity of receiving and processing infrared signals and greatly reduce the response time, and meanwhile, the absorption layer and the bionic infrared sensing film are hardly influenced by the working environment, so the element can carry out remote infrared detection operation in any climatic environment.
3. The bionic infrared sensing element has the advantages of reasonable structure, simple preparation process, simple and convenient operation in the use process and the like.
Drawings
Other objects and results of the present invention will become more apparent and readily appreciated by reference to the following description taken in conjunction with the accompanying drawings, and as the invention becomes more fully understood. In the drawings:
FIG. 1 is an isometric view of the overall structure of an embodiment of the present invention.
Fig. 2 is a sectional view of the entire structure in the embodiment of the present invention.
FIG. 3 is an isometric view of a biomimetic infrared receptive film in an embodiment of the present invention.
FIG. 4 is a graph illustrating average reflectivity according to an embodiment of the present invention.
Description of the drawings: the device comprises a piezoelectric film 1, a porous inner core absorption layer 2, an absorption layer peripheral film 3, a transparent quartz tube 4 and a quartz tube wall bionic infrared sensing film 5.
Detailed Description
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It may be evident, however, that such embodiment(s) may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing one or more embodiments.
Example 1
Fig. 1-3 show an overall structural schematic according to an embodiment of the present invention.
As shown in fig. 1 to 3, a bionic infrared sensor element of thermal radiation detection type according to an embodiment of the present invention includes: the device comprises a porous inner core absorption layer 1, an absorption layer peripheral film 2, a transparent quartz tube 3, a quartz tube wall bionic infrared sensing film 4 and a piezoelectric film 5 connected with a reading system. The quartz tube wall bionic infrared sensing film is prepared from a silicon wafer template, epoxy resin adhesive, PDMS and a curing agent; the porous core absorption layer 1 is made of steel wire, PDMS, curing agent and SiO 2 The microsphere is prepared. The porous core absorption layer 1 is made of PDMS (polydimethylsiloxane), a curing agent and SiO with the diameter of 3-5um 2 The microspheres are composed of PDMS (polydimethylsiloxane), a curing agent and SiO with the diameter of 3-5um 2 The mass fractions of the microspheres are 57.5-62.5 wt% of PDMS, 4.0-6.25 wt% of curing agent and SiO 2 :31.25-38.5wt％。
As shown in FIGS. 1-3, the porous core absorption layer has a cylindrical pore with a diameter of 100-250um, and the absorption layer film and the porous core absorption layer are made of the same material, i.e. 3um SiO 2 The microspheres are dispersed in a PDMS (polydimethylsiloxane) matrix (the mass ratio is 1-1; the porous inner core absorption layer is filled in the transparent quartz tube, and forms an upper cavity and a lower cavity together with the bottom of the quartz tube and the piezoelectric film, the lower cavity and the porous inner core absorption layer are filled with water, and the volume change caused by temperature change is converted into the volume change of liquid (water) filled in the lower cavity and the porous inner core absorption layer; the quartz tube wall film is an infrared sensing film with a dome-like structure and is coated on the outer wall of the transparent quartz tube; and the piezoelectric film connected with the reading system is packaged at the top of the quartz tube. WhereinA plurality of convex outer edge convex hulls are uniformly distributed on the film on the wall of the quartz tube, the outer edge curve is a fitting curve of a receptor imitating a Gelidine beetle dome structure, and the curve formula is as follows:
f outer (x) = a1 x ^ (6) + a2 x ^ (5) + a3 x ^ 4) + a4 x ^ (3) a5 x ^ (2) + a6 x + a7
Wherein x is more than or equal to 0 and less than or equal to 10,
wherein x is not less than 0 and not more than 10, a1= -1.421e-03a2= -2.11e-02, a3= -1.08e-01, a4= -4.14e-02, a5= -6.52e-01, a6= -2.24e-01, a7= -4.6715.
Example 2
The heat radiation detection type bionic infrared sensing element is mainly prepared from an absorption layer peripheral film, a quartz tube wall bionic infrared sensing film and a porous inner core absorption layer.
The preparation method of the bionic infrared sensing film on the quartz tube wall specifically comprises the following steps:
step 1: the silicon chip is placed in absolute ethyl alcohol for ultrasonic cleaning for 5-10min, and then taken out to be cleaned with deionized water for three times.
Step 2: coating photoresist on a silicon wafer base at a low rotation speed of 500r/min-600r/min for 30-50s, and switching to 1500r/min-1800r/min for 30-50s. Forming a uniform photoresist film
And 3, step 3: and (3) placing the silicon chip after the glue homogenizing in a vacuum drying oven, and keeping the temperature of 50-80 ℃ for 15-20 minutes.
And 4, step 4: and after the ultraviolet lamp is stabilized for 5-10min, exposing the silicon wafer subjected to the pre-baking treatment for 50-70 s.
And 5: and (3) placing the exposed silicon wafer in a vacuum drying oven, and keeping the temperature of 80-95 ℃ for 15-20 minutes.
Step 6: and (4) placing the silicon wafer after the post-baking treatment in a developing solution for developing for 20 s-50.
And 7: washing: and washing the developed silicon wafer with deionized water for 3-5 times to remove residual stains on the surface.
And 8: the samples were blow dried with a blower at room temperature. Obtaining a silicon wafer template with a Germing beetle dome receptor structure, and preparing the bionic infrared sensing film by a secondary template method, wherein the method comprises the following specific steps:
and step 9:100mL of the template is prepared by adding water and absolute ethyl alcohol (in a volume ratio of 1:3-1: 4) into a beaker, fully mixing, placing the template with the imitated dome structure into the beaker, cleaning the template in an ultrasonic cleaner for 10-15 minutes, and drying the template by using a blower.
Step 10: then, a first mold inverting reagent (mass ratio between 3 and 1) was prepared by using crystal dropping glue (epoxy resin) a/B glue at room temperature, a second mold inverting reagent (mass ratio between 10 and 1) was prepared by using a PDMS base agent and a curing agent, the mixture was stirred uniformly by using a glass rod and placed in a vacuum chamber, an oil-free diaphragm vacuum pump was turned on, the degree of vacuum was controlled to (-0.7 MPa) - (-0.5 MPa) and maintained for 30 to 50 minutes to remove air bubbles, and the mold inverting reagents were taken out.
Step 11: dripping the first mold-pouring reagent on a silicon wafer template by using a glass rod, standing for 10-15 minutes to ensure that the first mold-pouring reagent is fully immersed and uniformly spread, setting the temperature of an electric heating air blowing drying box to be 60-75 ℃, curing for 2-3 hours, taking out a sample, taking the sample off the template, and performing secondary mold pouring by using the sample as an intermediate template.
Step 12: and (3) dripping the secondary mould-reversing reagent on the intermediate template by using a glass rod, standing for 10-20 minutes to ensure that the secondary mould-reversing reagent is fully immersed into the template structure and is uniformly spread, placing the template structure in an electrothermal blowing dry box, setting the temperature to be 80-90 ℃, curing for 2-3 hours, taking out a sample, and taking off the sample from the intermediate template to obtain the dome-like structure film completely consistent with the surface structure of the silicon wafer.
Example 3
Preparation of the porous core absorption layer:
step 1: adding water and absolute ethyl alcohol (in a volume ratio of 1-1;
step 2: adhering the cut sponge sheets on the top end of a quartz tube mold by using common glue, and inserting a plurality of 100-250um steel wires into the sponge sheets after the sponge sheets are dried, so that the steel wires are uniformly distributed in the sponge sheets as much as possible;
and 3, step 3: then using PDMS as main agent, curing agent and SiO with diameter of 2-5um at room temperature 2 Preparing an injection molding reagent (mass ratio is 10;
and 4, step 4: gently scratching the bonding layer between the sponge sheet and the quartz tube mold by using a dissecting blade, slightly extracting the sponge sheet fully covered with the steel wires to a certain height (conveniently adding an injection molding reagent), adding the injection molding reagent into the quartz tube mold by using a medical injector, and then sticking the sponge sheet back to the top end of the quartz tube mold.
And 5: placing the mold in a vacuum box, starting an oil-free diaphragm vacuum pump, controlling the vacuum degree to be- (-0.7 MPa) - (-0.5 MPa), keeping for 30min-40min to remove bubbles, and taking out the mold;
and 6: placing the mould in an electrothermal blowing dry box, setting the temperature to be 80-90 ℃, and curing for 2-3 hours;
and 7: taking out the die, pulling out the steel wire (exerting force in the axial direction of the die), slightly knocking the side wall of the die by using a diamond knife, and taking out the formed porous inner core absorption layer;
and step 8: and coating the anti-reflection film on the outer wall of the packaging quartz tube, coating the anti-reflection film on the outer surface of the porous kernel absorption layer, and finally filling the porous kernel absorption layer in the packaging quartz tube. And obtaining the bionic infrared sensing element shown in the figure 1.
After the bionic infrared sensing element is prepared by the method, the reflection performance of the film of the bionic sensing element is tested by using a visible light-infrared spectrophotometer which is a TJ270-30A double-beam infrared spectrophotometer produced by Zhongshi Wake (Tianjin) science and technology development corporation. The experimental test wave band is 1-5 μm, and the test step length is 20nm. For unstructured SiO-free 2 A common film of microspheres having an average reflectivity of 8.2%; for structured SiO-free 2 A film of microspheres having an average reflectance of 3.4%; structured SiO of different spherical diameters 2 The reflectivity of the microsphere film is below 2.0 percentThe optimal mass ratio of the microspheres is 2: 3 μm SiO of 1 2 The optimal reflectivity of the microsphere film can be reduced to 1.45%, see FIG. 4.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and shall cover the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (4)
1. A heat radiation detection type bionic infrared sensing element is characterized by comprising: the device comprises a porous inner core absorption layer, an absorption layer peripheral film, a transparent quartz tube, a quartz tube wall bionic infrared sensing film and a piezoelectric film which are sequentially arranged from inside to outside;
the porous inner core absorption layer is composed of polydimethylsiloxane, a curing agent and SiO 2-5um in diameter, which are arranged on a steel wire 2 The microspheres are combined, wherein the polydimethylsiloxane, the curing agent and SiO with the diameter of 2-5um 2 The mass fractions of the microspheres are 57.5wt% -62.5wt% of PDMS, 4.0wt% -6.25 wt% of curing agent, and SiO 2 :31.25-38.5wt％；
The absorbing layer outer peripheral film and the porous core absorbing layer are made of the same material, namely 3um SiO 2 The microspheres are dispersed in a polydimethylsiloxane matrix, and the outer surface of the absorption layer peripheral film is a laser corrosion reverse mould structure film and is coated on the periphery of the porous core absorption layer; the porous inner core absorption layer is filled in the transparent quartz tube, and forms an upper chamber and a lower chamber together with the bottom of the quartz tube and the piezoelectric film, and the lower chamber and the porous inner core absorption layer are filled with water to convert the volume change caused by temperature change into the volume change of the liquid filled in the lower chamber;
the bionic infrared sensing film on the quartz tube wall is an infrared sensing film with a dome-like structure and is coated on the outer wall of the transparent quartz tube;
wherein a plurality of convex outer edge convex hulls are uniformly distributed on the bionic infrared sensing film of the quartz tube wall, the outer edge curve is a fitting curve of a receptor imitating a Gelidine beetle dome structure, and the curve formula is as follows:
f outer (x) = a1 x ^ 6) + a2 x ^ 5) + a3 x ^ 4) + a4 x ^ 3a 5 x ^ 2) + a6 x + a7
Wherein x is more than or equal to 0 and less than or equal to 10,
wherein 0 ≦ x ≦ 10, a1= -1.421e-03a2= -2.11e-02, a3= -1.08e-01, a4= -4.14e-02, a5= -6.52e-01, a6= -2.24e-01, a7= -4.6715;
the piezoelectric film is packaged on the top of the quartz tube and used for amplifying infrared signals and outputting electric signals to a display system.
2. The biomimetic infrared sensor of claim 1, wherein the inside of the porous core absorption layer is a cylindrical cavity with a diameter of 100-250 um.
3. The bionic infrared sensing element of thermal radiation detection type according to claim 1, wherein the preparation step of the bionic infrared sensing film on the quartz tube wall comprises the following steps: coating photoresist on a silicon wafer substrate at a low rotation speed of 500r/min-600r/min for 30-50s by using a self-rotating spin coater, and switching to a high rotation speed of 1500r/min-1800r/min for 30-50s; spreading the photoresist into a uniform film under the action of centrifugal force, and then placing the silicon wafer after photoresist homogenization in a vacuum drying oven, and keeping the temperature at 50-80 ℃ for 15-20 minutes; placing the film in an ultraviolet lamp for 5-10min, and exposing the silicon wafer subjected to the pre-baking treatment for 50-70 s; placing the exposed silicon wafer in a vacuum drying oven, and keeping the temperature of 80-95 ℃ for 15-20 minutes; placing the silicon wafer after post-baking treatment in a developing solution for developing for 20-50 s; then washing the developed silicon wafer with deionized water for 3-5 times to remove surface stains; drying the sample by using a blower at normal temperature; obtaining a silicon wafer template with a dome receptor structure of the ryanodine beetle; adding 100mL of water and absolute ethyl alcohol into a beaker, fully mixing, placing the bionic structure template into the beaker, placing the beaker into an ultrasonic cleaning machine, cleaning for 10-15 minutes, and drying by using a blower; preparing a first mold-reversing reagent by using crystal glue dripping A/B glue at room temperature, preparing a second mold-reversing reagent by using a PDMS (polydimethylsiloxane) main agent and a curing agent, uniformly stirring, placing in a vacuum box, controlling the vacuum degree to be-0.7 MPa to-0.5 MPa, keeping for 30-50 minutes, removing bubbles, and taking out the mold-reversing reagent; dripping a first mold-reversing reagent on a silicon wafer template by using a glass rod, standing for 10-15 minutes to ensure that the first mold-reversing reagent is fully immersed into the template structure and is uniformly spread, placing the template structure in an electric heating air blowing drying box, setting the temperature to be 60-75 ℃, curing for 2-3 hours, taking off the template, and performing secondary mold reversing; and (3) dripping the secondary mold-reversing reagent on the intermediate template by using a glass rod, standing for 10-20 minutes to ensure that the secondary mold-reversing reagent is fully immersed in the template structure and is uniformly spread, placing the template structure in an electric heating air blast drying box, setting the temperature to be 80-90 ℃, curing for 2-3 hours, taking out a sample, and removing the sample from the intermediate template to obtain the bionic film completely consistent with the surface structure of the silicon wafer.
4. The biomimetic infrared sensor element of claim 1, wherein the porous core absorption layer is prepared by steps including: adding 100mL of mixed solution of water and absolute ethyl alcohol into a beaker, adhering the sponge sheet to the top end of a quartz tube mold by using glue, and inserting a plurality of 100-250um steel wires into the quartz tube mold after the quartz tube mold is dried, so that the steel wires are uniformly distributed in the sponge sheet as much as possible; then using 5.75g-6.25g PDMS as main agent, 0.4g-0.625g curing agent and 3.125g-3.85g SiO 2-5um in diameter at room temperature 2 Preparing an injection molding reagent from microspheres, uniformly stirring the microspheres by using a glass rod, placing the microspheres in a vacuum box, using a vacuum pump, controlling the vacuum degree to be between-0.7 MPa and-0.5 MPa, keeping the vacuum degree for 30 to 40 minutes, removing bubbles and taking out the microspheres; slightly scratching an adhesive layer between the sponge sheet and the quartz tube mold by using a dissecting blade, adding a reagent into the quartz tube mold, then sticking the sponge sheet to the top end of the quartz tube mold, finally placing the mold in a vacuum box, opening a vacuum pump, controlling the vacuum degree to be-0.7 MPa to-0.5 MPa, keeping the vacuum degree for 30min to 40min, removing bubbles, and taking out the mold; placing the mixture in an electric heating air blast drying oven, setting the temperature to be 80-90 ℃, and curing for 2-3 hours; finally obtaining a cylindrical pore cavity with the diameter of 100-250 um; coating the outer wall of the quartz tube with antireflection film, and absorbing with antireflectionThe film is coated on the outer surface of the porous kernel absorption layer, and finally the porous kernel absorption layer is filled in the packaging quartz tube.
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