CN115406848A - Method for testing light absorption rate of film-film interface of semiconductor multilayer film system - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000012360 testing method Methods 0.000 title claims abstract description 34
- 230000031700 light absorption Effects 0.000 title abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000010521 absorption reaction Methods 0.000 claims abstract description 40
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- 239000010409 thin film Substances 0.000 claims description 134
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- 239000011521 glass Substances 0.000 claims description 6
- 238000002835 absorbance Methods 0.000 claims description 5
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- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
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- 238000005234 chemical deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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Abstract
The invention relates to the technical field of semiconductor multilayer films. The invention provides a method for testing the light absorption rate of a film-film interface of a semiconductor multilayer film system, which comprises the steps of constructing a reference film and a comparison film, wherein the thicknesses of substrates and the whole substrates used in the reference film and the comparison film are completely the same, the only difference is that the number of interface layers between a high-refractive-index film and a low-refractive-index film in the reference film and the comparison film is different, and the reference film and the comparison film have the same optical characteristics at the central wavelength, so that the constructed reference film and the comparison film can be used for researching the light absorption between the film and the film interface; the method can test the light absorption of the film-film interface of a multilayer film system, and further evaluate the absorption loss of the film-film interface; the testing method is suitable for interface light absorption between films with different refractive indexes and interface light absorption between films with different thicknesses, and has good universality and expansibility.
Description
Technical Field
The invention relates to the technical field of semiconductor multilayer films, in particular to a method for testing the light absorption rate of a film-film interface of a semiconductor multilayer film system.
Background
Since various microstructures are processed on a silicon wafer in semiconductor manufacturing, it is necessary to introduce non-silicon materials (such as non-silicon dielectric layers and metal layers) to realize different functions by depositing a multi-layer film system in addition to the original silicon-based materials. Semiconductor thin film devices typically require the introduction of a variety of materials, and thin film processes also have the ability to isolate and protect highly active materials (e.g., si, cu) from contamination and corrosion. Thin film processes also serve as part of the photoresist and are commonly used to produce antireflective films, hard masks, and the like that increase absorbance.
Thin film deposition of a semiconductor multilayer film device refers to a process of depositing various materials on a substrate by physical or chemical methods, and various methods such as Physical Vapor Deposition (PVD), chemical deposition (CVD), and Atomic Layer Deposition (ALD) are commonly used. Therefore, the semiconductor multilayer film system has a large number of thin film layers and a large number of types, and has extremely high process requirements. Wherein the optical absorption loss between film layers in the semiconductor multilayer film system is one of the key factors affecting the semiconductor device. Directly influences the performances of loss, stability, service life and the like of the device.
From the structural point of view of the multilayer film element, as shown in fig. 1, the optical film element can be divided into four parts, i.e., a substrate absorption a, a substrate-film interface absorption b, a film absorption c, a film-film interface absorption d, and a film absorption e. Wherein the absorption rate such as substrate absorption, film absorption and the like can be obtained by an absorption test characterization means. Wherein the interfacial absorption between films is difficult to obtain directly by absorption testing because it exists in a multi-layer system, rather than independently. However, the interface between the thin film and the thin film is often the position where the electromagnetic field intensity is the largest, and the resulting interface absorption is also the portion of the whole element where the absorption rate is the largest, so that the interface position where different thin film materials are overlapped is the position where the defects, performance distortion and breakage of the thin film element are most easily caused. The interface absorption between the thin films comes from the alternate superposition of the film materials in the preparation process, so that the impurity concentration at the interface is higher than that in the film body, and the absorption section is generated. Meanwhile, during the storage and use of the thin film element, the film system and the air interface absorb a large amount of impurities and moisture in the atmosphere, the moisture penetrates to the depth of the film layer and fills up microscopic gaps at each interface, and particularly in the multilayer film system, a large amount of film-film interface absorption exists, so that the interface absorption characteristics between the films need to be paid special attention. The existence of absorption loss not only directly affects the performance of the multilayer film device, but also the temperature rise generated by the thin film absorption light source and various thermal stress effects are important reasons for the performance degradation or damage of the semiconductor thin film device. In particular, in a multilayer film system with a strong electromagnetic field, there are a plurality of kinds of absorption between films, so even very weak absorption can cause the performance of the thin film element to be reduced or even destroyed, and the performance of the element is seriously affected. However, there is no technical disclosure to test and evaluate the light absorption loss at the film-to-film interface in a semiconductor multilayer film system.
Therefore, the reasonable evaluation of the light absorption loss of the film-film interface in the semiconductor multilayer film system plays an important role in developing high-performance and high-stability semiconductor thin film devices.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a method for testing the light absorption rate of the film-film interface of a semiconductor multilayer film system so as to evaluate the absorption loss of the film-film interface in the multilayer film system.
In a first aspect, the present invention provides a method for measuring the light absorption rate of a film-film interface of a semiconductor multilayer film system, comprising the steps of:
constructing a reference film, the reference film comprising: the device comprises a first substrate, and a first high-refractive-index film and a first low-refractive-index film which are positioned on the first substrate and are mutually superposed;
constructing a contrast film, the contrast film comprising: the second substrate is provided with a plurality of second high-refractive-index thin films and second low-refractive-index thin films which are sequentially arranged on the second substrate in a staggered mode;
the materials used by the first high-refractive-index thin film and the second high-refractive-index thin film are the same; the materials of the first low-refractive-index film and the second low-refractive-index film are the same;
the thickness and the used material of the first substrate and the second substrate are the same;
the thickness of the first high refractive index thin film is equal to the sum of the thicknesses of the plurality of second high refractive index thin films;
the thickness of the first low-refractive-index film is equal to the sum of the thicknesses of the second low-refractive-index films;
testing the reference film for light absorbance at a center wavelength;
testing the comparative film for light absorbance at a center wavelength;
subtracting the light absorptivity of the reference film from the light absorptivity of the contrast film to obtain a light absorptivity difference value;
subtracting the number of interface layers of the first high-refractive-index film and the first low-refractive-index film in the reference film from the number of interface layers of the second high-refractive-index film and the second low-refractive-index film in the contrast film to obtain an interface layer number difference value;
and dividing the difference value of the light absorptivity by the difference value of the number of interface layers to obtain the light absorptivity of the film-film interface.
Preferably, in the method for measuring the light absorption rate at the film-film interface of the semiconductor multilayer film system, the thickness of the second high refractive index thin film is 1/2 wavelength optical thickness of the second high refractive index thin film.
Preferably, in the method for measuring the light absorption rate at the film-film interface of the semiconductor multilayer film system, the thickness of the second low refractive index thin film is 1/2 wavelength optical thickness of the second low refractive index thin film.
Preferably, in the method for measuring the light absorption rate at the film-film interface of the semiconductor multilayer film system, the material used for the first high refractive index thin film and the second high refractive index thin film includes Ta 2 O 5 、Ti 3 O 5 、TiO 2 And ZnS.
Preferably, the material used for the first low refractive index thin film and the second low refractive index thin film comprises SiO 2 、Al 2 O 3 、MgF 2 Any one of the above.
Preferably, in the method for measuring the light absorption rate at the film-film interface of the semiconductor multilayer film system, the material used for the first high refractive index thin film and the second high refractive index thin film is TiO 2 The refractive index of the first high refractive index film and the refractive index of the second high refractive index film are 2.53.
Preferably, in the method for measuring the light absorption rate at the film-film interface of the semiconductor multilayer film system, the material used for the first low refractive index thin film and the second low refractive index thin film is SiO 2 The refractive index of the first low refractive index film and the refractive index of the second low refractive index film are 1.48.
Preferably, in the method for testing the light absorption rate of the film-film interface of the semiconductor multilayer film system, the thickness of the first substrate and the second substrate and the used material are the same.
Preferably, in the method for testing the light absorption rate of the film-film interface of the semiconductor multilayer film system, the first substrate and the second substrate are both transparent substrates.
Preferably, the material used for the first substrate and the second substrate comprises any one of 7980 glass, K9 glass, calcium fluoride glass and fused silica.
Compared with the prior art, the method for testing the light absorption rate of the film-film interface of the semiconductor multilayer film system has the following beneficial effects:
according to the method for testing the light absorption rate of the film-film interface of the semiconductor multilayer film system, the reference film and the comparison film are constructed, the thicknesses of substrates and the whole bodies used in the reference film and the comparison film are completely the same, the only difference is that the number of interface layers between a high-refractive-index film and a low-refractive-index film in the reference film and the comparison film is different, and the reference film and the comparison film have the same optical characteristics, so that the constructed reference film and the comparison film can be used for researching the light absorption between the films and the film interface; after the light absorptance of the reference film and the contrast film under the central wavelength is tested, the difference of the light absorptance is calculated, and the light absorptance difference is divided by the difference of the interface layer number to obtain the light absorptance of the film-film interface; the method can test the light absorption of the film-film interface of a multilayer film system, and further evaluate the absorption loss of the film-film interface; the testing method is suitable for interface light absorption between films with different refractive indexes and also suitable for interface light absorption between films with different thicknesses, and has good universality and expansibility. The testing method provides a new testing idea for the prior art that the interface light absorption between the films cannot be obtained directly through an absorption test.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of optical absorption of a prior art optical thin film device;
FIG. 2 is a schematic flow chart of the method for measuring the light absorption rate at the film-film interface of the semiconductor multilayer film system according to the present invention;
FIG. 3 is a schematic diagram of a reference film according to one embodiment of the present invention;
FIG. 4 is a schematic diagram of a comparative film according to one embodiment of the present invention;
FIG. 5 is a schematic structural view of a reference film and a comparative film in example 1 of the present invention.
Detailed Description
In the following, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The embodiment of the application provides a method for testing the light absorptivity of a film-film interface of a semiconductor multilayer film system, as shown in fig. 2, comprising the following steps:
s1, constructing a reference film, wherein the reference film comprises: the device comprises a first substrate, and a first high-refractive-index film and a first low-refractive-index film which are positioned on the first substrate and are mutually superposed;
s2, constructing a contrast film, wherein the contrast film comprises: the second substrate is provided with a plurality of second high-refractive-index thin films and second low-refractive-index thin films which are sequentially arranged on the second substrate in a staggered mode;
the materials used by the first high-refractive-index film and the second high-refractive-index film are the same; the materials used by the first low-refractive-index film and the second low-refractive-index film are the same;
the thicknesses and the materials of the first substrate and the second substrate are the same;
the thickness of the first high refractive index film is equal to the sum of the thicknesses of the plurality of second high refractive index films;
the thickness of the first low refractive index film is equal to the sum of the thicknesses of the plurality of second low refractive index films;
s3, testing the light absorption rate of the reference film under the central wavelength;
s4, testing the light absorption rate of the contrast film under the central wavelength;
s5, subtracting the light absorptivity of the reference film from the light absorptivity of the contrast film to obtain a light absorptivity difference value;
s6, subtracting the number of interface layers of the first high-refractive-index thin film and the first low-refractive-index thin film in the reference film from the number of interface layers of the second high-refractive-index thin film and the second low-refractive-index thin film in the contrast film to obtain an interface layer number difference value;
and S7, dividing the difference value of the light absorptivity by the difference value of the number of the interface layers to obtain the light absorptivity of the film-film interface.
It should be noted that, in the method for testing the light absorption rate of the film-film interface of the semiconductor multilayer film system provided by the present application, first, a reference film and a comparison film are respectively constructed, as shown in fig. 3 to 4, the reference film includes a first substrate 10, and a first high refractive index thin film 11 and a first low refractive index thin film 12 which are located on the first substrate 10 and are stacked on each other; wherein, a first high refractive index thin film 11 and a first low refractive index thin film 12 are deposited on a first substrate 10 by Physical Vapor Deposition (PVD), chemical deposition (CVD), atomic Layer Deposition (ALD), and the like; the comparative film includes: a second substrate 20, and a plurality of second high refractive index thin films 21 and second low refractive index thin films 22 alternately arranged on the second substrate 20; wherein, a second high refractive index thin film 21 and a second low refractive index thin film 22 are deposited on the second substrate 20 by Physical Vapor Deposition (PVD), chemical deposition (CVD), atomic Layer Deposition (ALD), and the like; specifically, the number of the second high refractive index films 21 and the second low refractive index films 22 alternately arranged on the second substrate 20 is determined according to actual conditions, and may be, for example, 2, 3, 4, 5, 6, 7, 8, 9, and 10 layers … … n (n is a positive integer). The materials used for the first high refractive index thin film 11 and the second high refractive index thin film 21 are the same, the materials used for the first low refractive index thin film 12 and the second low refractive index thin film 22 are the same, and the thicknesses and the materials used for the first substrate 10 and the second substrate 20 are the same; the thickness of the first high refractive index thin film 11 is equal to the sum of the thicknesses of the plurality of second high refractive index thin films 21, the thickness of the first low refractive index thin film 12 is equal to the sum of the thicknesses of the plurality of second low refractive index thin films 22, and the number of the second high refractive index thin films 21 and the number of the second low refractive index thin films 22 which are arranged in a staggered manner in the comparison film are 4, further described, the sum of the thicknesses of the 4 second high refractive index thin films 21 in the comparison film is equal to the thickness of the first high refractive index thin film 11 in the reference film, and the sum of the thicknesses of the 4 second low refractive index thin films 22 in the comparison film is equal to the thickness of the first low refractive index thin film 12 in the reference film. Namely, the thicknesses of the substrates and the whole bodies used in the reference film and the comparison film are all the same, and the only difference is that the reference film and the comparison film are a high-refractive-index thin film and a low-refractive-index thin filmThe number of interface layers between the films is different, the number of interface layers between the high refractive index thin film and the low refractive index thin film in the reference film is 1, and the number of interface layers between the high refractive index thin film and the low refractive index thin film in the comparison film is determined according to the number of mutually staggered layers of the second high refractive index thin film 21 and the second low refractive index thin film 22, for example, when the number of mutually staggered layers is 2, the number of interface layers between the high refractive index thin film and the low refractive index thin film is 3, when the number of mutually staggered layers is 3, the number of interface layers between the high refractive index thin film and the low refractive index thin film is 5, when the number of mutually staggered layers is 4, the number of interface layers between the high refractive index thin film and the low refractive index thin film is 7, and when the number of mutually staggered layers is n, the number of interface layers between the high refractive index thin film and the low refractive index thin film is 2n-1; the reference film and the comparison film constructed above have the same optical characteristics except that the number of interface layers between the high refractive index thin film and the low refractive index thin film is different, and the two films have the same optical characteristics, so that the reference film and the comparison film can be used for researching the light absorption between the thin films and the thin film interfaces; the light absorption rates of the reference film and the comparison film at the central wavelength are respectively tested, and it can be understood that the difference between the reference film and the comparison film at the central wavelength is caused by the difference in the number of interface layers between the reference film and the high-refractive-index film and the low-refractive-index film in the reference film, the number of interface layers of the high-refractive-index film and the low-refractive-index film in the comparison film is 2n < -1 >, the number of interface layers of the high-refractive-index film and the low-refractive-index film in the reference film is 1, the number of interface layers of the high-refractive-index film and the low-refractive-index film in the comparison film is 2n < -2 > more than that in the reference film, and the difference in the light absorption rates of the reference film and the comparison film at the central wavelength is caused just by the fact that the number of interface layers of the high-refractive-index film and the low-refractive-index film in the comparison film is more than that in the reference film; therefore, after the optical absorption rates of the reference film and the comparison film at the central wavelength are obtained through testing, the optical absorption rate of the film-film interface of the semiconductor multilayer film system can be obtained according to the number of the film interface layers. Further, if the reference film has an optical absorption of A at the center wavelength 1 The comparative film had an optical absorption A at the center wavelength 2 The difference in the light absorptance between the reference film and the reference film is Δ a = a 2 -A 1 Since the number of interface layers in the high refractive index film and the low refractive index film in the comparative film is 2n-2 more than that in the reference film, the average value of the light absorption rate difference between the single high refractive index film and the single low refractive index film in the comparative film is A j (= Δ A/(2 n-2)), by A j The light absorption between the high refractive index film and the low refractive index film can be judged; it is understood that, for example, A j When the refractive index is very small (close to 0), there is almost no light absorption between the high refractive index film and the low refractive index film, and when A is small j And if the refractive index is large, the high refractive index film and the low refractive index film have larger light absorption.
Specifically, in some embodiments, conventional methods such as photothermal radiation technology, laser calorimetry technology, surface thermal lens technology, photoacoustic spectroscopy, etc. are used to measure the light absorption rate of the reference film and the reference film at the central wavelength, where the light absorption rate refers to the light absorption rate of the entire reference film and the reference film.
In some embodiments, the thickness of the second high refractive index thin film is 1/2 wavelength thick of the second high refractive index thin film.
In some embodiments, the thickness of the second low refractive index film is 1/2 wavelength of the thickness of the second low refractive index film.
Specifically, in the above embodiments, the thickness of the second high refractive index thin film in the comparison film is the thickness of 1/2 wavelength of the second high refractive index thin film, the thickness of the second low refractive index thin film is the thickness of 1/2 wavelength of the second low refractive index thin film, H denotes the second high refractive index thin film, and L denotes the thin film with lower second refractive index, the film system constructed in the comparison film is HHLLHHLLHHLL, HH, that is, the thickness of the second high refractive index thin film is the optical thickness of 1/2 wavelength of the second high refractive index thin film, LL denotes the thickness of the second low refractive index thin film is the optical thickness of 1/2 wavelength of the second low refractive index thin film (H, L is the second high refractive index thin film and the second low refractive index thin film with thickness of 1/4 wavelength, respectively), that is, the second high refractive index thin film and the second low refractive index thin film constructed in the comparison film are half-wave dummy layers, that is the dummy layer is the layer with no plated film at the center wavelength. The reference film and the reference film were made to have the same optical properties at the center wavelength by the introduction of the dummy layer.
Specifically, the sum of the thicknesses of the plurality of second high refractive index thin films and the plurality of second low refractive index thin films in the comparative film is n × 1/2 × λ 1 +n×1/2×λ 2 (λ 1 Is the wavelength, λ, of the second high refractive index film 2 The wavelength of the second low refractive index film). And the first high refractive index thin film in the reference film has a thickness of n × 1/2 × λ 1 The first low refractive index film has a thickness of n × 1/2 × λ 2 . From the above, the sum of the optical thicknesses of the high refractive index thin film and the low refractive index thin film on the reference film substrate is equal to that of the comparative film.
The test method is suitable for interface light absorption between films with different refractive indexes, is also suitable for interface light absorption between films with different thicknesses, and has good universality and expansibility.
Specifically, if the number of the second high refractive index thin films 21 and the second low refractive index thin films 22 in the comparative film are 2, the film system on the second substrate in the comparative film is denoted as a/hhllll, and correspondingly, the film system on the first substrate in the reference film is denoted as a/hhllll, in this embodiment, H is the first (second) high refractive index thin film, L is the first (second) low refractive index thin film, and a is Air represents the Air outside the film.
In some embodiments, the material used for the first high refractive index film and the second high refractive index film comprises Ta 2 O 5 、Ti 3 O 5 、TiO 2 And ZnS.
In some embodiments, the material used for the first low refractive index film and the second low refractive index film comprises SiO 2 、Al 2 O 3 、MgF 2 Any one of the above.
In some embodiments, the material used for the first high refractive index film and the second high refractive index film is TiO 2 The refractive index of the first high refractive index film and the refractive index of the second high refractive index film were 2.53.
In some embodiments, a first low refractive index film, a second low refractive index filmThe material used for the refractive index film is SiO 2 The refractive index of the first low refractive index film and the refractive index of the second low refractive index film were 1.48.
In some embodiments, the thickness of the first substrate, the second substrate, and the material used are the same.
In some embodiments, the first substrate and the second substrate are both transparent substrates.
In some embodiments, the materials used for the first and second substrates include any one of 7980 glass, K9 glass, calcium fluoride glass, fused silica; the thickness of the first substrate and the second substrate is 2-5 mm.
The following further describes the method for measuring the light absorption rate at the film-film interface of the semiconductor multilayer film system according to the present application with specific examples. This section further illustrates the present disclosure in connection with specific examples, which should not be construed as limiting the invention. The technical means employed in the examples are conventional means well known to those skilled in the art, unless otherwise specified.
Example 1
The embodiment of the application provides a method for testing the light absorptivity of a film-film interface of a semiconductor multilayer film system, which comprises the following steps:
s1, constructing a reference film, as shown with reference to fig. 5, the reference film includes: a first substrate 10, and a first high refractive index thin film 11 and a first low refractive index thin film 12 which are positioned on the first substrate 10 and are overlapped with each other;
s2, constructing a comparison film, and referring to fig. 5, wherein the comparison film comprises: a second substrate 20, and second high refractive index thin films 21 and second low refractive index thin films 22 alternately arranged on the second substrate 20 in sequence;
the first high refractive index film 11 and the second high refractive index film 21 are made of TiO 2 The refractive index of the first high refractive index film 11 and the refractive index of the second high refractive index film 21 are 2.53;
the materials of the first low refractive index film 12 and the second low refractive index film 22 are both SiO 2 The refractive indices of the first low refractive index film 12 and the second low refractive index film 22 are 1.48;
the number of the second high refractive index thin film 21 and the second low refractive index thin film 22 on the second substrate 20 is 2;
the thickness of the second high refractive index film 21 is 1/2 wavelength of the second high refractive index film, specifically 70nm;
the thickness of the second low refractive index film 22 is 1/2 wavelength of the second low refractive index film, specifically 120nm;
the thickness of the first high refractive index film 11 is 140nm;
the thickness of the first low refractive index film 12 is 240nm;
the first substrate and the second substrate are made of fused quartz, and the thicknesses of the first substrate and the second substrate are both 3mm;
s3, testing the light absorption rate of the reference film under the central wavelength;
s4, testing the light absorption rate of the contrast film under the central wavelength;
s5, subtracting the light absorptivity of the reference film from the light absorptivity of the contrast film to obtain a light absorptivity difference value;
s6, subtracting the number of interface layers of the first high-refractive-index film and the first low-refractive-index film in the reference film from the number of interface layers of the second high-refractive-index film and the second low-refractive-index film in the contrast film to obtain an interface layer number difference value;
and S7, dividing the difference value of the light absorptivity by the difference value of the number of interface layers to obtain the light absorptivity of the film-film interface.
The reference film and the comparative film constructed in the above examples have the same optical characteristics at the center wavelength (λ =355 nm), the sum of the thicknesses of the first high refractive index thin film and the first low refractive index thin film on the first substrate is 380nm, and the sum of the thicknesses of the second high refractive index thin film and the second low refractive index thin film on the second substrate, which are staggered with each other, is 70nm +120nm =380nm; the optical absorption a of the reference film at the central wavelength (λ =355 nm) was tested 1 0.5% light absorption of the comparative film 2 0.9%, and the difference in light absorptance between the reference film and the comparative film was Δ a = a 2 -A 1 =0.004, the number of interfacial layers of the high refractive index thin film and the low refractive index thin film in the reference film is 3 in comparison film, and the refractive index in the reference film is highThe number of the interfaces of the high refractive index film and the low refractive index film is 1, the number of the interfaces of the high refractive index film and the low refractive index film in the comparison film is 2 more than that of the interfaces in the reference film, and the average value of the light absorptivity difference values between the single high refractive index film and the single low refractive index film in the comparison film is A j = Δ a/2=0.2%, by a j The light absorption between the high refractive index film and the low refractive index film was evaluated at 0.2%.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. A method for testing the light absorptivity of a film-film interface of a semiconductor multilayer film system is characterized by comprising the following steps:
constructing a reference film, the reference film comprising: the film comprises a first substrate, and a first high-refractive-index film and a first low-refractive-index film which are positioned on the first substrate and are mutually superposed;
constructing a contrast film, the contrast film comprising: the second substrate is provided with a plurality of second high-refractive-index thin films and second low-refractive-index thin films which are sequentially arranged on the second substrate in a staggered mode;
the materials used by the first high-refractive-index thin film and the second high-refractive-index thin film are the same; the materials of the first low-refractive-index film and the second low-refractive-index film are the same;
the thicknesses and the used materials of the first substrate and the second substrate are the same;
the thickness of the first high-refractive-index thin film is equal to the sum of the thicknesses of the plurality of second high-refractive-index thin films;
the thickness of the first low-refractive-index film is equal to the sum of the thicknesses of the second low-refractive-index films;
testing the reference film for light absorbance at a center wavelength;
testing the comparative film for light absorbance at a center wavelength;
subtracting the light absorptivity of the reference film from the light absorptivity of the contrast film to obtain a light absorptivity difference value;
subtracting the number of interface layers of the first high refractive index film and the first low refractive index film in the reference film from the number of interface layers of the second high refractive index film and the second low refractive index film in the contrast film to obtain an interface layer number difference value;
and dividing the difference value of the light absorptivity by the difference value of the number of interface layers to obtain the light absorptivity of the film-film interface.
2. The method for measuring optical absorption at a film-film interface of a semiconductor multilayer film system as claimed in claim 1, wherein the thickness of the second high refractive index thin film is an optical thickness of 1/2 wavelength of the second high refractive index thin film.
3. The method for measuring optical absorption at a film-film interface of a semiconductor multilayer film system according to claim 1, wherein the thickness of the second low refractive index thin film is an optical thickness of 1/2 wavelength of the second low refractive index thin film.
4. The method for measuring optical absorption at a film-film interface in a semiconductor multilayer film system according to claim 1, wherein a material for the first high refractive index thin film and the second high refractive index thin film comprises Ta 2 O 5 、Ti 3 O 5 、TiO 2 And ZnS.
5. The method for measuring optical absorption at film-film interface of semiconductor multilayer film system according to claim 1, wherein the material for the first low refractive index thin film and the second low refractive index thin film comprises SiO 2 、Al 2 O 3 、MgF 2 Any one of the above.
6. The method for measuring optical absorption at film-film interface in a semiconductor multilayer film system according to claim 4, wherein the first high refractive index thin film and the second high refractive index thin filmThe material used for the film is TiO 2 The refractive index of the first high refractive index film and the refractive index of the second high refractive index film are 2.53.
7. The method for measuring optical absorption at film-film interface of semiconductor multilayer film system according to claim 5, wherein the material used for the first low refractive index thin film and the second low refractive index thin film is SiO 2 The refractive index of the first low refractive index film and the refractive index of the second low refractive index film are 1.48.
8. The method for testing optical absorption rate at film-film interface of semiconductor multilayer film system according to claim 1, wherein the first substrate and the second substrate are transparent substrates.
9. The method for testing optical absorption rate at film-film interface of semiconductor multilayer film system according to claim 1, wherein the material used for the first substrate and the second substrate comprises any one of 7980 glass, K9 glass, calcium fluoride glass, and fused silica.
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