CN115398626A - 摄像装置 - Google Patents

摄像装置 Download PDF

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Publication number
CN115398626A
CN115398626A CN202180027760.XA CN202180027760A CN115398626A CN 115398626 A CN115398626 A CN 115398626A CN 202180027760 A CN202180027760 A CN 202180027760A CN 115398626 A CN115398626 A CN 115398626A
Authority
CN
China
Prior art keywords
photoelectric conversion
electrode
semiconductor material
blocking layer
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180027760.XA
Other languages
English (en)
Chinese (zh)
Inventor
饭岛浩章
岸本有子
平出雅哉
田中真司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN115398626A publication Critical patent/CN115398626A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202180027760.XA 2020-04-27 2021-04-15 摄像装置 Pending CN115398626A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020078446 2020-04-27
JP2020-078446 2020-04-27
PCT/JP2021/015520 WO2021220820A1 (ja) 2020-04-27 2021-04-15 撮像装置

Publications (1)

Publication Number Publication Date
CN115398626A true CN115398626A (zh) 2022-11-25

Family

ID=78373534

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180027760.XA Pending CN115398626A (zh) 2020-04-27 2021-04-15 摄像装置

Country Status (5)

Country Link
US (1) US12433087B2 (https=)
EP (1) EP4145542A4 (https=)
JP (1) JPWO2021220820A1 (https=)
CN (1) CN115398626A (https=)
WO (1) WO2021220820A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023203995A1 (https=) * 2022-04-21 2023-10-26
CN120937537A (zh) * 2023-04-13 2025-11-11 松下知识产权经营株式会社 拍摄装置
CN120917904A (zh) * 2023-04-13 2025-11-07 松下知识产权经营株式会社 摄像装置
WO2024214597A1 (ja) * 2023-04-13 2024-10-17 パナソニックＩｐマネジメント株式会社 撮像装置
WO2025173447A1 (ja) * 2024-02-13 2025-08-21 パナソニックＩｐマネジメント株式会社 光電変換素子および撮像装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008072090A (ja) * 2006-08-14 2008-03-27 Fujifilm Corp 光電変換素子及び固体撮像素子
JP5323025B2 (ja) * 2010-10-26 2013-10-23 富士フイルム株式会社 固体撮像素子
JP5969843B2 (ja) * 2012-07-17 2016-08-17 日本放送協会 有機光電変換素子、及び、これを含む受光素子
JP7000020B2 (ja) 2016-11-30 2022-01-19 キヤノン株式会社 光電変換装置、撮像システム
CN108389875A (zh) 2017-02-03 2018-08-10 松下知识产权经营株式会社 摄像装置
CN108389870A (zh) 2017-02-03 2018-08-10 松下知识产权经营株式会社 摄像装置
JP6920652B2 (ja) * 2017-02-03 2021-08-18 パナソニックＩｐマネジメント株式会社 撮像装置
TWI782937B (zh) * 2017-04-10 2022-11-11 日商松下知識產權經營股份有限公司 攝像裝置
CN108807585A (zh) * 2017-04-26 2018-11-13 松下知识产权经营株式会社 光检测装置
JP6894760B2 (ja) 2017-05-17 2021-06-30 キヤノン株式会社 光電変換装置及び撮像システム

Also Published As

Publication number Publication date
JPWO2021220820A1 (https=) 2021-11-04
EP4145542A1 (en) 2023-03-08
EP4145542A4 (en) 2023-11-15
US20230045630A1 (en) 2023-02-09
WO2021220820A1 (ja) 2021-11-04
US12433087B2 (en) 2025-09-30

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