CN115395197A - Slow wave transmission line structure based on dielectric integrated suspension parallel strip line - Google Patents
Slow wave transmission line structure based on dielectric integrated suspension parallel strip line Download PDFInfo
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- CN115395197A CN115395197A CN202211024994.1A CN202211024994A CN115395197A CN 115395197 A CN115395197 A CN 115395197A CN 202211024994 A CN202211024994 A CN 202211024994A CN 115395197 A CN115395197 A CN 115395197A
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 29
- 239000000725 suspension Substances 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 230000000694 effects Effects 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 58
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000005452 bending Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/081—Microstriplines
- H01P3/084—Suspended microstriplines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
- H01P3/121—Hollow waveguides integrated in a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
Abstract
The invention discloses a slow wave transmission line structure based on a medium integrated suspension parallel strip line, which comprises double-sided parallel strip lines arranged in the medium integrated suspension parallel strip line, wherein the double-sided parallel strip lines are arranged on the upper surface and the lower surface of a target medium substrate; the low-impedance double-sideband lines and the high-impedance double-sideband lines are respectively arranged on the upper surface and the lower surface of the target dielectric substrate, the low-impedance double-sideband lines are overlapped in the vertical direction, and the high-impedance double-sideband lines are mutually offset in the horizontal direction; the low-impedance strip line and the high-impedance strip line on the same layer are mutually cascaded to form a double-side strip line structure with a slow wave effect. The invention is beneficial to realizing the slow wave effect of the double-sideband line differential transmission line, and effectively reducing the physical length of the double-sideband line transmission line and the circuit size of the related circuit; the radiation loss is small because the air cavity is internally arranged.
Description
Technical Field
The invention relates to the technical field of radio frequency microwave circuits, in particular to a slow wave transmission line structure based on a dielectric integrated suspended parallel strip line.
Background
The transmission line is a basic component of a passive circuit and an active circuit of the radio frequency microwave front end. Differential or balanced versions of the transmission line are capable of transmitting differential signals while having common mode noise rejection capabilities. The double-sided parallel strip line is a common differential transmission line structure and is widely researched and applied to differential passive circuits. However, the size of existing double-sided parallel strip lines and their circuitry is typically large, especially at lower operating frequencies. In addition, the current double-side-band wire is usually exposed in air, and has a certain radiation loss problem.
Therefore, the size of the double-sided parallel strip line and the circuit is reduced, and the radiation loss of the circuit is reduced, so that the method has important significance.
Disclosure of Invention
The invention aims to provide a slow wave transmission line structure based on a dielectric integrated suspended parallel strip line, aiming at solving the problems of double-sided parallel strip lines, circuit size snares and certain loss of circuit radiation in the prior art, and the structure has the advantages of circuit miniaturization and low radiation loss.
The technical scheme adopted for realizing the purpose of the invention is as follows:
a slow wave transmission line structure based on a dielectric integrated suspension parallel strip line comprises double-sided parallel strip lines arranged inside the dielectric integrated suspension parallel strip line, wherein the double-sided parallel strip lines are arranged on the upper surface and the lower surface of a target dielectric substrate, air cavities are formed above the upper surface and below the lower surface of the target dielectric substrate respectively, and each double-sided parallel strip line comprises a low-impedance double-strip line and a high-impedance double-strip line which are positioned in each air cavity; the low-impedance double-side strip line is composed of an upper-layer low-impedance strip line and a lower-layer low-impedance strip line which are respectively arranged on the upper surface and the lower surface of the target medium substrate, are parallel up and down and are overlapped in the vertical direction, and the high-impedance double-side strip line is composed of an upper-layer high-impedance strip line and a lower-layer high-impedance strip line which are respectively arranged on the upper surface and the lower surface of the target medium substrate, are parallel up and down and are mutually offset in the horizontal direction; the upper low-impedance strip line of the low-impedance double-side strip line and the upper high-impedance strip line of the high-impedance double-side strip line are mutually cascaded, the lower low-impedance strip line of the low-impedance double-side strip line and the lower high-impedance strip line of the high-impedance double-side strip line are mutually cascaded to form a double-side strip line structure with a slow wave effect, and a double-side strip line slow wave structure is formed.
As a preferable technical solution, the low-impedance double-sideband line adopts a parallel plate structure, and the high-impedance double-sideband line adopts a meander line structure.
As a preferred technical scheme, the suspension parallel strip line based on the medium integration comprises five layers of medium substrates, wherein metal layers are respectively arranged on the upper surface and the lower surface of each layer of medium substrate; the metalized through holes penetrate through the dielectric substrate, and the local signal conduction bands or signal grounds of different metal layers are connected with each other; the medium substrates in the middle parts of the second layer of medium substrate and the fourth layer of medium substrate are partially hollowed and cut off, so that an air cavity is formed in the five layers of medium substrates; the double-side parallel strip line is arranged on the upper surface and the lower surface of the third layer of dielectric substrate and is positioned in the air cavity and is separated from the metal layer on the same layer in the horizontal direction, so that the double-side strip line structure is arranged in the multi-layer dielectric plate with the electromagnetic shielding characteristic, and the radiation loss is reduced.
As a preferred technical scheme, the bending structure is formed by continuously bending left and right to form end-to-end connection.
The slow wave transmission line structure based on the dielectric integrated suspended parallel strip line realizes the slow wave effect of the double-strip line differential transmission line by using the form of cascade connection of the high-impedance double-strip line and the low-impedance double-strip line, and can effectively reduce the physical length of the double-strip line transmission line and the circuit size of a related circuit thereof.
In addition, the slow wave transmission line structure based on the dielectric integrated suspended parallel strip line, which is provided by the invention, has the advantage of small radiation loss because the double-strip line slow wave structure is arranged in the air cavity.
Drawings
FIG. 1 is a top view of a slow wave double sideband line transmission line of the present invention disposed on a target dielectric substrate (comprising 5 sections of low impedance double sideband lines and 4 sections of high impedance double sideband lines);
FIG. 2 is a top metal layer structure of the slow wave double sideband line of FIG. 1;
FIG. 3 is a diagram of the lower metal layer structure of the slow wave double sideband line of FIG. 1;
FIG. 4 is a cross-sectional view of a low impedance double sideband line on a target dielectric substrate;
FIG. 5 is a cross-sectional view of a high impedance double sideband line on a target dielectric substrate;
FIG. 6 is a top view of a high impedance double sideband line;
FIG. 7 is a top view of a low impedance double sideband line;
FIG. 8 is a multi-layer schematic diagram of a media integrated suspended parallel stripline (SISPSL) structure;
FIG. 9 is a top rear view of a slow wave double sideband line transmission line disposed on a target dielectric substrate (including 4 sections of low impedance double sideband lines and 3 sections of high impedance double sideband lines);
FIG. 10 is a top metal layer structure of the slow wave double sideband line of FIG. 9;
fig. 11 is a lower metal layer structure view of the slow wave double sideband line of fig. 9.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The slow wave structure can effectively reduce the physical length of the transmission line under the condition of keeping the electrical length unchanged. A dielectric Integrated Suspended Line (SISL) is a self-packaging circuit design platform based on a multi-layer board structure, can effectively reduce radiation loss of an internal circuit, and has the advantages of self-packaging, low cost, high integration, high performance and the like. A double-side-band Line structure is built in a multilayer medium integrated suspended Line structure to form a new differential transmission Line structure, namely a medium integrated suspended parallel Line (SISPSL). Therefore, the invention combines the slow wave structure and the medium integrated suspended parallel strip line to solve the technical problems of reducing the sizes of the double-sided parallel strip line and the circuit and reducing the radiation loss of the circuit in the background technology.
As shown in fig. 1 to 8, a slow wave transmission line structure based on a dielectric integrated suspended parallel stripline (SISPSL) according to an embodiment of the present invention is disposed in the dielectric integrated suspended parallel stripline, the double-sideband line structure as a main body includes two metal layers, namely an upper metal layer 55 and a lower metal layer 66, the upper metal layer 55 and the lower metal layer 66 are respectively disposed on upper and lower sides of a target dielectric slab (please refer to a third substrate 03 shown in fig. 8) based on the dielectric integrated suspended parallel stripline, so as to form the double-sideband line structure, and air cavities are disposed on two sides of the dielectric slab based on the dielectric integrated suspended parallel stripline.
In the embodiment of the invention, the multilayer structure based on the dielectric integrated suspended parallel stripline finally forms a dielectric integrated suspended parallel stripline structure, and the slow wave transmission line is called as a slow wave transmission line structure based on the dielectric integrated suspended parallel stripline. The upper metal layer 55 is formed by cascading the upper low-impedance strip line 11 and the upper high-impedance strip line 21, and the lower metal layer 66 is formed by cascading the lower low-impedance strip line 12 and the lower high-impedance strip line 22.
In the embodiment of the invention, the low-impedance double-side strip line is formed by two metal layers which are positioned at the upper side and the lower side of the dielectric plate, and the upper metal layer and the lower metal layer of the low-impedance double-side strip line are overlapped from top to bottom, namely a parallel plate structure, so that the low-impedance double-side strip line structure is formed together. Because of its large overlap area, large mutual capacitance and small characteristic impedance value, it is called a "low" impedance double-sideband line.
In the embodiment of the invention, the high-impedance double-sideband line is formed by two metal layers which are positioned at the upper side and the lower side of the target dielectric plate, and the upper metal layer and the lower metal layer of the high-impedance double-sideband line are deviated when viewed from top to bottom, so that the high-impedance double-sideband line structure is formed together. Because the upper metal layer and the lower metal layer have offset and are far away from each other, the line widths of the upper metal layer and the lower metal layer are also narrow, the mutual capacitance is small, and the characteristic impedance value is large, so the double-side strip line is called as high-impedance double-side strip line.
The slow wave transmission line of the embodiment of the invention has the slow wave effect which is mainly obtained by cascading high-low impedance strip lines. For the slow wave transmission line structure of fig. 1-3, it includes 5 segments of low impedance double sideband lines and 4 segments of high impedance double sideband lines.
The double-sideband line is a differential transmission line, and the magnitude of the characteristic impedance is mainly determined by the relative positional relationship of the two striplines and the respective line widths.
The low-impedance double-side strip line has wide line width, basically overlapped upper and lower metal layers, large mutual capacitance effect and relatively small mutual inductance, so the characteristic impedance is low.
The high-impedance double-side strip line has narrow line width, long horizontal distance between the upper metal layer and the lower metal layer and basically no vertical overlapping part, the formed mutual capacitance effect is small, and the narrow line enables the self inductance to be large through folding and bending, so that the characteristic impedance of the section of the double-side strip line is high.
Through the cascade connection of the high-low impedance lines, the slow wave effect of the double-side strip line can be effectively enhanced, and therefore the purpose of miniaturization is achieved.
As shown in fig. 8, the double-stripline slow-wave transmission line of the embodiment of the present invention is embedded in a multilayer circuit board, forming a dielectric integrated suspension double-sideband line structure (SISPSL).
The dielectric integrated suspension double-side strip line structure comprises five dielectric substrates which are stacked from top to bottom, namely a first substrate 01, a second substrate 02, a third substrate 03, a fourth substrate 04, a fifth substrate 05 and ten metal layers, namely a first metal layer 1, a second metal layer 2, a third metal layer 3, a fourth metal layer 4, a fifth metal layer 5, a sixth metal layer 6, a seventh metal layer 7, an eighth metal layer 8, a ninth metal layer 9 and a tenth metal layer 10.
The first metal layer 1 and the second metal layer 2 are respectively located on the upper surface and the lower surface of the first substrate 01, the third metal layer 3 and the fourth metal layer 4 are respectively located on the upper surface and the lower surface of the second substrate 02, the fifth metal layer 5 and the sixth metal layer 6 are respectively located on the upper surface and the lower surface of the third substrate 03, the seventh metal layer 7 and the eighth metal layer 8 are respectively located on the upper surface and the lower surface of the fourth substrate 04, and the ninth metal layer 9 and the tenth metal layer 10 are respectively located on the upper surface and the lower surface of the fifth substrate 05.
And when the five layers of medium substrates are pressed together, an air cavity is formed inside. The upper metal layer 55 and the lower metal layer 66 of the double-sided tape wire of the present invention are located in the air cavity, the upper metal layer 55 and the fifth metal layer are located at the same layer, and the lower metal layer 66 and the sixth metal layer are located at the same layer, and are horizontally spaced apart from each other from the metal layer of the same layer.
According to the embodiment of the invention, the slow wave double-side strip line structure is embedded in the air cavity of the medium integrated suspension double-side strip line structure, so that the self-packaging of the slow wave double-side strip line structure is realized, and the radiation loss of the slow wave double-side strip line structure is reduced.
Fig. 9-11 illustrate a simplified version of the slow wave double sideband line, comprising 4 sections of low impedance double sideband lines and 3 sections of high impedance double sideband lines cascaded with one another.
It should be noted that the slow band line structure proposed by the present invention may be formed by mutually cascading any number of low impedance lines and any number of high impedance lines according to the actual circuit requirements, and is not limited to the illustrated embodiment.
While there have been shown and described the fundamental principles and essential features of the invention and advantages thereof, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but is capable of other specific forms without departing from the spirit or essential characteristics thereof;
the present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present specification describes embodiments, not every embodiment includes only a single embodiment, and such description is for clarity purposes only, and it is to be understood that all embodiments may be combined as appropriate by one of ordinary skill in the art to form other embodiments as will be apparent to those of skill in the art from the description herein.
Claims (4)
1. The slow wave transmission line structure based on the medium integrated suspension parallel strip line is characterized by comprising double-sided parallel strip lines arranged inside the medium integrated suspension parallel strip line, wherein the double-sided parallel strip lines are arranged on the upper surface and the lower surface of a target medium substrate, air cavities are formed above the upper surface and below the lower surface of the target medium substrate respectively, and the double-sided parallel strip lines comprise low-impedance double-strip lines and high-impedance double-strip lines which are positioned in the air cavities; the low-impedance double-side strip line is composed of an upper-layer low-impedance strip line and a lower-layer low-impedance strip line which are respectively arranged on the upper surface and the lower surface of the target medium substrate, are parallel to each other up and down and are overlapped in the vertical direction, and the high-impedance double-side strip line is composed of an upper-layer high-impedance strip line and a lower-layer high-impedance strip line which are respectively arranged on the upper surface and the lower surface of the target medium substrate, are parallel to each other up and down and are mutually offset in the horizontal direction; the upper low-impedance strip line of the low-impedance double-side strip line and the upper high-impedance strip line of the high-impedance double-side strip line are mutually cascaded, the lower low-impedance strip line of the low-impedance double-side strip line and the lower high-impedance strip line of the high-impedance double-side strip line are mutually cascaded to form a double-side strip line structure with a slow wave effect, and a double-side strip line slow wave structure is formed.
2. The structure of claim 1, wherein the low impedance double sideband lines are parallel plate structures and the high impedance double sideband lines are meander line structures.
3. The slow wave transmission line structure based on the dielectric integrated suspended parallel stripline as claimed in claim 1 or 2, wherein the dielectric integrated suspended parallel stripline has five layers of dielectric substrates, and the upper surface and the lower surface of each layer of dielectric substrate are respectively provided with a metal layer; the metalized through holes penetrate through the dielectric substrate, and the local signal conduction bands or signal grounds of different metal layers are connected with each other; the medium substrates in the middle parts of the second layer of medium substrate and the fourth layer of medium substrate are partially cut off in a hollow manner, so that an air cavity is formed in the five layers of medium substrates; the double-side parallel strip line is arranged on the upper surface and the lower surface of the third layer of dielectric substrate and is positioned in the air cavity and is separated from the metal layer on the same layer in the horizontal direction, so that the double-side strip line structure is arranged in the multi-layer dielectric plate with the electromagnetic shielding characteristic, and the radiation loss is reduced.
4. The slow wave transmission line structure based on the dielectric integrated suspended parallel striplines of claim 2, wherein the meander line structure is an end-to-end meander structure formed by successive left and right turns.
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| CN202211024994.1A CN115395197B (en) | 2022-08-25 | 2022-08-25 | Slow wave transmission line structure based on medium integrated suspension parallel strip line |
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| CN202211024994.1A CN115395197B (en) | 2022-08-25 | 2022-08-25 | Slow wave transmission line structure based on medium integrated suspension parallel strip line |
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