CN110416674B - Single-cavity double-frequency-band microwave filter based on coplanar waveguide - Google Patents
Single-cavity double-frequency-band microwave filter based on coplanar waveguide Download PDFInfo
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- CN110416674B CN110416674B CN201910777722.0A CN201910777722A CN110416674B CN 110416674 B CN110416674 B CN 110416674B CN 201910777722 A CN201910777722 A CN 201910777722A CN 110416674 B CN110416674 B CN 110416674B
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- 239000002184 metal Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 33
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 238000004891 communication Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000008207 working material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
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Abstract
The invention discloses a single-cavity double-frequency band microwave filter based on a coplanar waveguide. The passband with dual-mode characteristics is obtained by arranging the input/output port with the rotation symmetry characteristics, and the single-cavity coplanar waveguide filter is divided into four areas by adding the grounded central through hole and opening symmetrical T-shaped grooves at two sides of the central through hole, so that four resonant modes are generated in the cavity, and the coplanar waveguide filter with dual-passband characteristics is obtained. The miniaturization of the filter with the dual-band characteristic is realized.
Description
Technical Field
The invention belongs to the technical field of optical/microwave, wireless communication and test simulation, and particularly relates to a coplanar waveguide filter with dual-band characteristics.
Background
With the rapid development of wireless communication technology, the electromagnetic spectrum is becoming increasingly crowded, and a microwave filter plays a very important role in communication equipment as an important element in a communication system, so that higher and higher requirements are put on performance indexes of the filter. In order to meet the demands of wireless communication in the direction of multi-band and multi-mode development, the method has important significance for researching the multi-passband microwave filter. The common filter can only realize information transmission of a single frequency band, the utilization rate of spectrum resources is not high, the traditional double-frequency band filter is realized by directly cascading two single-frequency band filters, but the direct cascading can bring high insertion loss, and the structure is complex and the volume is large.
Disclosure of Invention
The invention aims to provide a single-cavity double-frequency-band microwave filter based on a coplanar waveguide, which has the advantages of compact structure, small volume, easiness in processing, low loss and the like. And etching the metal patches on the upper and lower surfaces of a printed circuit board respectively, wherein one surface is used as a metal ground, and the other surface is provided with a slot, so that the coplanar waveguide resonator is obtained. The passband with dual-mode characteristic is obtained by arranging the input/output port with rotation symmetry characteristic, and the single-cavity coplanar waveguide filter is divided into four parts by adding the grounded central through hole and opening symmetrical T-shaped grooves at two sides of the central through hole, so that four resonant modes are generated in the cavity, and the coplanar waveguide filter with dual-passband characteristic is obtained.
The specific technical scheme for realizing the aim of the invention is as follows:
a single-cavity double-frequency band microwave filter based on coplanar waveguide is characterized in that: the filter comprises from top to bottom: the dielectric substrate comprises a first metal layer, a dielectric substrate and a second metal layer, wherein a through hole is formed in the center of the dielectric substrate; the upper surface of the medium substrate is printed with a first metal layer, the geometric dimension of the first metal layer is identical to that of the medium substrate, and a coplanar waveguide input port, a coplanar waveguide output port, a coplanar waveguide slot, an input/output port slot, a coupling feed slot, a T-shaped symmetrical slot and a round hole are formed in the first metal layer; the input/output port slots are symmetrically arranged at the rectangular long side end points to form a coplanar waveguide input port and a coplanar waveguide output port, and the input/output ports have rotation symmetry characteristics; the tail ends of the input and output port grooves are respectively provided with an L-shaped coplanar waveguide groove to form a coplanar waveguide resonant cavity; rectangular coupling feed slots are respectively formed at the joints of the input/output port slots and the coplanar waveguide slots; the center of the dielectric substrate is provided with a round hole, the round hole is the same as the circle center position and the radius of the through hole on the dielectric substrate, T-shaped grooves are symmetrically formed by taking the round hole as the center, and the coplanar waveguide resonant cavity is divided into four areas;
the lower surface of the dielectric substrate is printed with a second metal layer, and the geometric dimension of the second metal layer is completely the same as that of the dielectric substrate; the center of the second metal layer is provided with a round hole, and the round hole is the same as the center of the through hole of the dielectric substrate in position and radius.
The first metal layer and the second metal layer are made of copper.
The inner wall of the through hole is coated with a copper film.
The dielectric substrate material is Rogers RT4003, the relative dielectric constant is 3.55, and the thickness is 0.2 mm.
The coplanar waveguide input port and the coplanar waveguide output port are both coplanar waveguide transmission lines with impedance of 50 ohms.
The through hole suppresses the second harmonic wave to high frequency and suppresses the second harmonic wave.
The coupling feed slot forms a transmission zero out of band.
The symmetrical T-shaped grooves divide the coplanar waveguide resonant cavity into four areas, and four resonant modes can be generated in the cavity to obtain a double-passband structure.
The center frequencies of the two pass bands of the invention are respectively 8 GHz and 13.1 GHz.
The relative bandwidths of the two pass bands of the invention are 35.9% and 19.8%, respectively.
A transmission zero point exists at the middle position (10.6 GHz) of the center frequencies of the two pass bands, the inhibition depth reaches-25 dB, and the isolation between the two pass bands is effectively improved.
The invention has the beneficial effects that the second harmonic wave and the third harmonic wave are effectively restrained by adding the metallized through hole in the center of the coplanar waveguide resonator and adopting the feed coupling groove, and the structural size of the coplanar waveguide filter is not increased. And then the coplanar waveguide resonant cavity is divided into four areas by a mode of opening T-shaped grooves at two sides of the metalized through hole, so that a double-passband structure is obtained, and the size miniaturization of the filter with the double-passband characteristic is realized.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a bottom view of the present invention;
FIG. 4 is a graph of simulation and test results of the present invention.
Detailed Description
The invention is further described below with reference to the drawings and examples.
Referring to fig. 1 to 3, the filter of the present invention has a three-layer structure, including a dielectric substrate 1, a first metal layer 2 on the upper surface of the dielectric substrate 1, and a second metal layer 3 on the lower surface. The dielectric substrate 1 of the filter has a rectangular shape, and a through hole 10 with a copper-clad film on the inner wall is formed in the center.
Referring to fig. 1 and 2, a first metal layer 2 is printed on the upper surface of a dielectric substrate 1, and the length and width of the first metal layer are the same as those of the dielectric substrate 1. Fig. 2 is a top view of the present invention, namely, a structure diagram of the first metal layer 2. As shown in fig. 2, a pair of rectangular input/output port grooves 7 are formed at the two ends of the long side of the first metal layer 2, which are symmetrical left and right, to form a coplanar waveguide input port 4 and a coplanar waveguide output port 5, which have a rotationally symmetrical characteristic. And an L-shaped coplanar waveguide groove 6 is opened at the tail end of the input/output port groove 7 to form a coplanar waveguide resonant cavity. Along the input/output port slots 7, a pair of bilaterally symmetrical coupling feed slots 8 are opened, the distance between the pair of slots being smaller than the distance between the input/output port slots 7. And (3) punching the center of the first metal layer 2 to obtain a through hole, wherein the center position and the radius of the through hole are the same as those of the through hole 10 on the dielectric substrate 1. And a pair of T-shaped grooves 9 which are symmetrical left and right are arranged at two sides of the through hole.
Referring to fig. 1 and 3, a second metal layer 3 is printed on the lower surface of the dielectric substrate 1, and the length and width of the second metal layer are the same as those of the dielectric substrate 1. Fig. 3 is a bottom view of the present invention, namely, a structure diagram of the second metal layer 3. As shown in fig. 3, the center of the through hole is punched to obtain a through hole, and the center position and the radius of the through hole are the same as those of the through hole 10 on the dielectric substrate 1.
As shown in fig. 1 to 3, the upper and lower surfaces of the dielectric substrate 1 are both provided with metal layers; in the design, the dielectric substrate 1 preferably has a dielectric constant of 3.55, a loss tangent of 0.0027, and a dielectric substrate thickness of 0.2mm using Rogers 4003; the thickness of the metal layers on the upper and lower surfaces of the dielectric substrate 1 was set to 0.035mm, and copper was used as a working material.
Referring to fig. 2, the coplanar waveguide input port 4 and the coplanar waveguide output port 5 in the first metal layer 2 each employ a 50 ohm coplanar waveguide transmission line, and the main purpose of the device is to facilitate measurement and easy connection with other circuits.
In the invention, the second harmonic wave is moved to high frequency to be close to the third harmonic wave by adding the through hole 10 of the copper-clad film; a pair of coupling feed slots 8 are formed along the input/output port slots to form a band stop structure, and a transmission zero point is formed outside the band; and then, a pair of T-shaped grooves 9 which are vertically symmetrical are formed at two sides of the through hole 10, so that the coplanar waveguide resonant cavity is divided into four areas, and a double-passband structure is obtained.
As shown in FIG. 4, a comparison of the results of the simulation and test of the present invention is shown. From the figure, it is seen that the simulation is quite identical to the test results. The center frequencies of the two pass bands of the filter are respectively 8 GHz and 13.1 GHz; the relative bandwidths are 35.9% and 19.8%, respectively; insertion loss was 0.62 dB and 1.04 dB, respectively; the return loss is less than-20 dB. There is a transmission zero point between pass bands at 10.6 GHz, which is just in the middle of the center frequency of the two pass bands, and the inhibition depth reaches-25 dB, so that the isolation between the two pass bands is effectively improved.
While the invention has been described in detail in connection with the preferred embodiments thereof, it should be understood by those skilled in the art that the foregoing is not intended to limit the invention thereto, and that various changes and modifications may be made without departing from the scope of the invention.
Claims (2)
1. A single-cavity dual-band microwave filter based on coplanar waveguide, characterized in that the filter comprises from top to bottom: the dielectric substrate comprises a first metal layer (2), a dielectric substrate (1) and a second metal layer (3), wherein a through hole (10) is formed in the center of the dielectric substrate (1);
the upper surface of the dielectric substrate (1) is printed with a first metal layer (2), the geometric dimension of the first metal layer (2) is identical to that of the dielectric substrate (1), and a coplanar waveguide input port (4), a coplanar waveguide output port (5), a coplanar waveguide groove (6), an input and output port groove (7), a coupling feed groove (8), a T-shaped groove (9) and a round hole are formed in the first metal layer; the input/output port grooves (7) are symmetrically arranged at the rectangular long side end points to form a coplanar waveguide input port (4) and a coplanar waveguide output port (5), and the input/output ports have rotation symmetry characteristics; the tail ends of the input and output port grooves (7) are respectively provided with an L-shaped coplanar waveguide groove (6) to form a coplanar waveguide resonant cavity; rectangular coupling feed grooves (8) are respectively formed at the vertical connection positions of the input/output port grooves (7) and the coplanar waveguide grooves (6); a round hole is arranged in the center, the round hole is the same as the circle center position and the radius of a through hole (10) on the medium substrate (1), T-shaped grooves (9) are symmetrically formed by taking the round hole as the center, and the coplanar waveguide resonant cavity is divided into four areas to obtain a double-passband structure;
the lower surface of the medium substrate (1) is printed with a second metal layer (3), and the geometric dimension of the second metal layer (3) is identical to that of the medium substrate (1); a round hole is arranged in the center of the second metal layer (3), and the round hole is the same as the circle center position and the radius of the through hole (10) of the medium substrate (1);
the inner wall of the through hole (10) is coated with a copper film;
moving the second harmonic to a high frequency close to the third harmonic through the through hole (10); and a pair of coupling feed grooves (8) are formed along the input/output port grooves (7) to form a band stop structure, and a transmission zero point is formed outside the band.
2. The coplanar waveguide-based single-cavity dual-band microwave filter according to claim 1, wherein the materials used for the first metal layer (2) and the second metal layer (3) are copper.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910777722.0A CN110416674B (en) | 2019-08-22 | 2019-08-22 | Single-cavity double-frequency-band microwave filter based on coplanar waveguide |
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| CN201910777722.0A CN110416674B (en) | 2019-08-22 | 2019-08-22 | Single-cavity double-frequency-band microwave filter based on coplanar waveguide |
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| CN110416674A CN110416674A (en) | 2019-11-05 |
| CN110416674B true CN110416674B (en) | 2024-03-22 |
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| CN112186315A (en) * | 2020-09-28 | 2021-01-05 | 努比亚技术有限公司 | Double-frequency filter and mobile terminal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779639A (en) * | 2014-01-15 | 2014-05-07 | 西安理工大学 | Branch-node-loading square-ring dual-mode dual-frequency filter |
| CN105098301A (en) * | 2015-07-23 | 2015-11-25 | 南京航空航天大学 | SIW-based dual-band-pass filter for loading H type gap structure |
| CN106207324A (en) * | 2016-08-26 | 2016-12-07 | 南京理工大学 | A kind of broadband filter based on substrate integration wave-guide |
| CN210296585U (en) * | 2019-08-22 | 2020-04-10 | 华东师范大学 | Single-cavity dual-band microwave filter based on coplanar waveguide |
-
2019
- 2019-08-22 CN CN201910777722.0A patent/CN110416674B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779639A (en) * | 2014-01-15 | 2014-05-07 | 西安理工大学 | Branch-node-loading square-ring dual-mode dual-frequency filter |
| CN105098301A (en) * | 2015-07-23 | 2015-11-25 | 南京航空航天大学 | SIW-based dual-band-pass filter for loading H type gap structure |
| CN106207324A (en) * | 2016-08-26 | 2016-12-07 | 南京理工大学 | A kind of broadband filter based on substrate integration wave-guide |
| CN210296585U (en) * | 2019-08-22 | 2020-04-10 | 华东师范大学 | Single-cavity dual-band microwave filter based on coplanar waveguide |
Non-Patent Citations (1)
| Title |
|---|
| 共面波导馈电的小型化双通带滤波器;占腊民;陈芳胜;李文广;;微波学报;20170815(第04期);全文 * |
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