CN105098301A - SIW-based dual-band-pass filter for loading H type gap structure - Google Patents
SIW-based dual-band-pass filter for loading H type gap structure Download PDFInfo
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- CN105098301A CN105098301A CN201510438047.0A CN201510438047A CN105098301A CN 105098301 A CN105098301 A CN 105098301A CN 201510438047 A CN201510438047 A CN 201510438047A CN 105098301 A CN105098301 A CN 105098301A
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Abstract
The invention discloses an SIW-based dual-band-pass filter for loading an H type gap structure. The dual-band-pass filter comprises two SIW-cavity resonators and a coplanar waveguide. The two ends of each of the two SIW-cavity resonators are connected with an input-output end of the coplanar waveguide respectively. The H type gap structure is loaded above a coupling window of the two SIW-cavity resonators. The SIW-based dual-band-pass filter of the invention has dual-band-pass, and dual-transmission zero, and is high in selection, compact in structure and easy to process.
Description
Technical field
The present invention relates to a kind of double-passband filter, belong to wireless communication technology field.
Background technology
Because frequency spectrum resource is limited, particularly low section of RF and microwave frequency range can say the stage having arrived and had too many difficulties to cope with, therefore single frequency band communication system has seemed outmoded, the demand of radio communication can not be met well, communicate to the development of more high band, can the double frequency of compatible used various communications band resource and Multi-Frequency Signaling System be a developing direction of radio communication from now on again simultaneously.In order to make full use of existing frequency spectrum and infrastructure device resource, arrange multiple communications bands that can simultaneously work in a communications system, one of effective way is exactly research and develop high performance two-band microwave filter.Two-band microwave filter is the signal processing two wave bands with a two-band unit, and this design concept provides the infrastructure and high performance product that easily realize.Adopt the two-band filter with the output of single port input single port greatly can reduce system bulk, improve system reliability, therefore in communication equipment, two-band filter has become the critical elements in the Wireless Telecom Equipment of microwave frequency band.
The situation utilizing double resonator method to realize double-passband filter is described in " research and advances of microwave twin band pass filter " (Jiaotong University Of East China's journal, in April, 2010, the 27th volume the 2nd phase) literary composition.Wherein main because 1/2nd wave resonator of embedded method can produce bilateral effect in the difference of two different frequency range guide wavelengths, and the resonator physical size of high frequency pass band is less, embedded mode can be adopted, substantially reduce volume, its shortcoming is that two centre frequencies that the coupling of interior external resonator and two-band require may produce contradiction on regulating.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of double-passband filter loading H groove part gap structure based on SIW, have dual-passband, dual transfer zero, high selectivity, compact conformation is easy to the features such as processing.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
A kind of double-passband filter loading H groove part gap structure based on SIW, comprise two SIW chamber resonators and co-planar waveguide, the two ends of described two SIW chamber resonators are connected with input/output terminal respectively by co-planar waveguide, load H groove part gap structure directly over the coupling window of two SIW chamber resonators.
Further, described two SIW chamber resonators are not for arranging some plated-through holes enclose formation upper left the parting on the right side of medium substrate, and what be positioned at left side is a SIW chamber resonator, and what be positioned at right side is the 2nd SIW chamber resonator.
Further, the diameter of described plated-through hole is all consistent, and spacing between adjacent metal through hole is identical.
Further, described medium substrate comprises dielectric substrate, upper metal layers and lower metal layer, and described dielectric substrate is arranged between upper metal layers and lower metal layer.
Further, described co-planar waveguide is by offering first line of rabbet joint, second line of rabbet joint in upper metal layers, and offer third slot line, the 4th line of rabbet joint formation in upper metal layers, described first feeder line is connected with a SIW chamber resonator left side central portion with second line of rabbet joint by first line of rabbet joint, and described second feeder line is connected with the 2nd SIW chamber resonator right side central with the 4th line of rabbet joint by third slot line.
Further, described first line of rabbet joint, second line of rabbet joint, third slot line and the 4th line of rabbet joint are respectively the L connected in star offered in the upper metal layers of medium substrate, and described first feeder line and the second feeder line are respectively the strip metal layer arranged on dielectric substrate.
Further, on setting medium substrate, transversal centerline is y-axis, longitudinal midline is x-axis, described first feeder line and the second feeder line are about x-axis symmetry, first line of rabbet joint and second line of rabbet joint are about y-axis symmetry, third slot line and the 4th line of rabbet joint are about y-axis symmetry, and first line of rabbet joint and third slot line are about x-axis symmetry, and second line of rabbet joint and the 4th line of rabbet joint are about x-axis symmetry.
Further, the characteristic impedance between described first feeder line and the second feeder line is 50 ohm.
Further, described H groove part gap structure comprises the 5th line of rabbet joint, the 6th line of rabbet joint and the 7th line of rabbet joint, described 5th line of rabbet joint and the 7th line of rabbet joint are set in parallel in directly over coupling window, described 5th line of rabbet joint and the 7th line of rabbet joint are about y-axis symmetry, and described 6th line of rabbet joint is vertically set on the center line between the 5th line of rabbet joint and the 7th line of rabbet joint.
Beneficial effect: double-passband filter of the present invention realizes by loading H groove part gap structure directly over coupling window, do not increase additional volumes, realize second passband simultaneously, not only little on the performance index impact of first passband, can also produce a transmission zero respectively at the stopband up and down of second passband, make second passband have high selectivity, the center of two passbands and bandwidth can flexible separately, total is simple in addition, is easy to processing.
Accompanying drawing explanation
Fig. 1 be the present invention adopt the schematic diagram of medium substrate.
Fig. 2 is structural representation of the present invention.
Fig. 3 is the present invention's topology schematic diagram.
Fig. 4 is scattering parameter simulate and test result figure of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
The invention provides a kind of double-passband filter loading H groove part gap structure based on SIW, adopt relative dielectric constant to be 2.2, thickness be the pcb board of 0.508mm as medium substrate, the pcb board of other specifications also can be adopted as medium substrate.As Fig. 1, described medium substrate comprises dielectric substrate 11, upper metal layers 12 and lower metal layer 13, and described dielectric substrate 11 is arranged between upper metal layers 12 and lower metal layer 13.The upper metal layers 12 that described medium substrate upper strata is covered with is for offering first line of rabbet joint 21, second line of rabbet joint 22, third slot line 23, the 4th line of rabbet joint 24, the 5th line of rabbet joint 25, the 6th line of rabbet joint 26 and the 7th line of rabbet joint 27; Described medium substrate lower floor is covered with lower metal layer 13, as the ground of whole filter.Described plated-through hole runs through upper metal layers 12, dielectric substrate 11 and lower metal layer 13.The diameter of described plated-through hole is all consistent, and be 0.6mm, the spacing between adjacent metal through hole is identical, is 1mm.
Medium substrate comprises two SIW chamber resonators and co-planar waveguide, the two ends of described two SIW chamber resonators are connected with input/output terminal respectively by co-planar waveguide, load H groove part gap structure directly over the coupling window of two SIW chamber resonators.
Described two SIW chamber resonators are not for arranging some plated-through holes enclose formation upper left the parting on the right side of medium substrate, and what be positioned at left side is a SIW chamber resonator, and what be positioned at right side is the 2nd SIW chamber resonator.Wherein, each SIW chamber resonator at the long 26mm in x-axis direction, the wide 22.8mm in y-axis direction.
Described first line of rabbet joint 21, second line of rabbet joint 22, third slot line 23 and the 4th line of rabbet joint 24 are respectively the L connected in star offered in the upper metal layers 12 of medium substrate, and described first feeder line 31 and the second feeder line 32 are respectively the strip metal layer arranged on dielectric substrate 11.Described co-planar waveguide is by offering first line of rabbet joint 21, second line of rabbet joint 22 in upper metal layers 12, and offer third slot line 23 in upper metal layers 12, the 4th line of rabbet joint 24 is formed, described first feeder line 31 is connected with a SIW chamber resonator left side central portion with second line of rabbet joint 22 by first line of rabbet joint 21, and described second feeder line 32 is connected with the 2nd SIW chamber resonator right side central with the 4th line of rabbet joint 24 by third slot line 23.Characteristic impedance between described first feeder line 31 and the second feeder line 32 is 50 ohm.
On setting medium substrate, transversal centerline is y-axis, longitudinal midline is x-axis, described first feeder line 31 and the second feeder line 32 are about x-axis symmetry, first line of rabbet joint 21 and second line of rabbet joint 22 are about y-axis symmetry, third slot line 23 and the 4th line of rabbet joint 24 are about y-axis symmetry, first line of rabbet joint 21 and third slot line 23 are about x-axis symmetry, and second line of rabbet joint 22 and the 4th line of rabbet joint 24 are about x-axis symmetry.
Described H groove part gap structure comprises the 5th line of rabbet joint 25, the 6th line of rabbet joint 26 and the 7th line of rabbet joint 27, described 5th line of rabbet joint 25 and the 7th line of rabbet joint 27 are set in parallel in directly over coupling window, described 5th line of rabbet joint 25 and the 7th line of rabbet joint 27 are about y-axis symmetry, and described 6th line of rabbet joint 26 is vertically set on the center line between the 5th line of rabbet joint 25 and the 7th line of rabbet joint 27.Wherein, the 5th line of rabbet joint 25 and the long 14.5mm of the 7th line of rabbet joint 27, the long 1.5mm of the 6th line of rabbet joint 26.
The H groove part gap structure loaded is equivalent to two U-shaped resonators, wherein the 5th line of rabbet joint 25 in positive y direction, 7th line of rabbet joint 27 and the 6th line of rabbet joint 26 in positive y direction constitute a U-shaped resonator, 5th line of rabbet joint 25 in negative y direction, 7th line of rabbet joint 27 and the 6th line of rabbet joint 26 in negative y direction constitute another U-shaped resonator, these two U-shaped resonators embedded in two SIW chamber resonators, shape second passband under the effect of these two U-shaped resonators.
While two U-shaped resonators produce second passband, and create cross-couplings between two SIW chamber resonators, create two transmission zeros, make the edge of second passband very precipitous, there is high selectivity.
As shown in Figure 3, " S " is signal source, and " L " is load.Owing to introducing two U-shaped resonators in addition, make to define cross-couplings between two original SIW chamber resonators and two U-shaped resonators, create two transmission zeros, respectively at 6.55GHz and 7.8GHz, improve the selectivity of second passband.
As shown in Figure 4, scattering parameter emulation of the present invention and measured result.Described double-passband filter centre frequency is respectively 5.2GHz and 7GHz and exists, its 10dB relative bandwidth is respectively 4% and 3%, as we can see from the figure emulation and measured result substantially identical, wherein the insertion loss of measure error is slightly bigger than normal is come from mismachining tolerance and the radiation loss of slotted line in test process.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (9)
1. one kind loads the double-passband filter of H groove part gap structure based on SIW, comprise two SIW chamber resonators and co-planar waveguide, the two ends of described two SIW chamber resonators are connected with input/output terminal respectively by co-planar waveguide, it is characterized in that: directly over the coupling window of two SIW chamber resonators, load H groove part gap structure.
2. a kind of double-passband filter loading H groove part gap structure based on SIW according to claim 1, it is characterized in that: described two SIW chamber resonators are not for arranging some plated-through holes enclose formation upper left the parting on the right side of medium substrate, what be positioned at left side is a SIW chamber resonator, and what be positioned at right side is the 2nd SIW chamber resonator.
3. a kind of double-passband filter loading H groove part gap structure based on SIW according to claim 2, is characterized in that: the diameter of described plated-through hole is all consistent, and spacing between adjacent metal through hole is identical.
4. a kind of double-passband filter loading H groove part gap structure based on SIW according to claim 1, it is characterized in that: described medium substrate comprises dielectric substrate (11), upper metal layers (12) and lower metal layer (13), and described dielectric substrate (11) is arranged between upper metal layers (12) and lower metal layer (13).
5. a kind of double-passband filter loading H groove part gap structure based on SIW according to claim 4, it is characterized in that: described co-planar waveguide is by offering first line of rabbet joint (21) in upper metal layers (12), second line of rabbet joint (22), and offer third slot line (23) in upper metal layers (12), 4th line of rabbet joint (24) is formed, described first feeder line (31) is connected with a SIW chamber resonator left side central portion with second line of rabbet joint (22) by first line of rabbet joint (21), described second feeder line (32) is connected with the 2nd SIW chamber resonator right side central with the 4th line of rabbet joint (24) by third slot line (23).
6. a kind of double-passband filter loading H groove part gap structure based on SIW according to claim 5, it is characterized in that: described first line of rabbet joint (21), second line of rabbet joint (22), third slot line (23) and the 4th line of rabbet joint (24) are respectively the L connected in star offered in the upper metal layers (12) of medium substrate, described first feeder line (31) and the second feeder line (32) are respectively at the upper strip metal layer arranged of dielectric substrate (11).
7. a kind of double-passband filter loading H groove part gap structure based on SIW according to claim 6, it is characterized in that: on setting medium substrate, transversal centerline is y-axis, longitudinal midline is x-axis, described first feeder line (31) and the second feeder line (32) are about x-axis symmetry, first line of rabbet joint (21) and second line of rabbet joint (22) are about y-axis symmetry, third slot line (23) and the 4th line of rabbet joint (24) are about y-axis symmetry, first line of rabbet joint (21) and third slot line (23) are about x-axis symmetry, second line of rabbet joint (22) and the 4th line of rabbet joint (24) are about x-axis symmetry.
8. a kind of double-passband filter loading H groove part gap structure based on SIW according to claim 7, is characterized in that: described first feeder line (31) is 50 ohm with the characteristic impedance of the second feeder line (32).
9. a kind of double-passband filter loading H groove part gap structure based on SIW according to claim 1, it is characterized in that: described H groove part gap structure comprises the 5th line of rabbet joint (25), the 6th line of rabbet joint (26) and the 7th line of rabbet joint (27), described 5th line of rabbet joint (25) and the 7th line of rabbet joint (27) are set in parallel in directly over coupling window, described 5th line of rabbet joint (25) and the 7th line of rabbet joint (27) are about y-axis symmetry, and described 6th line of rabbet joint (26) is vertically set on the center line between the 5th line of rabbet joint (25) and the 7th line of rabbet joint (27).
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| CN201510438047.0A CN105098301B (en) | 2015-07-23 | 2015-07-23 | A kind of double-passband filter based on SIW loading H-type gap structures |
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| CN201510438047.0A CN105098301B (en) | 2015-07-23 | 2015-07-23 | A kind of double-passband filter based on SIW loading H-type gap structures |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105449322A (en) * | 2015-11-30 | 2016-03-30 | 超视距成都科技有限责任公司 | Millimeter wave dual-passband filter and design method therefor |
| CN106410337A (en) * | 2016-09-29 | 2017-02-15 | 上海航天测控通信研究所 | Single-cavity substrate integrated waveguide multi-transmission-zero-point filter |
| CN110416674A (en) * | 2019-08-22 | 2019-11-05 | 华东师范大学 | Single-chamber Dual-band microwave filter based on co-planar waveguide |
| CN114335937A (en) * | 2021-12-20 | 2022-04-12 | 南京邮电大学 | Substrate integrated cavity slow wave hybrid electromagnetic coupling filter |
Citations (2)
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|---|---|---|---|---|
| CN2796130Y (en) * | 2005-06-08 | 2006-07-12 | 东南大学 | Low resistance-high resistance short microstrip line substrte integrated cavity filter |
| KR100716156B1 (en) * | 2005-10-31 | 2007-05-10 | 엘지이노텍 주식회사 | Ultra-Wideband Band pass filter using Low temperature co-fired ceramic |
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2015
- 2015-07-23 CN CN201510438047.0A patent/CN105098301B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2796130Y (en) * | 2005-06-08 | 2006-07-12 | 东南大学 | Low resistance-high resistance short microstrip line substrte integrated cavity filter |
| KR100716156B1 (en) * | 2005-10-31 | 2007-05-10 | 엘지이노텍 주식회사 | Ultra-Wideband Band pass filter using Low temperature co-fired ceramic |
Non-Patent Citations (1)
| Title |
|---|
| CHANG JIANG YOU 等: ""Single-Layered SIW Post-Loaded Electric Coupling-Enhanced Structure and Its Filter Applications"", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105449322A (en) * | 2015-11-30 | 2016-03-30 | 超视距成都科技有限责任公司 | Millimeter wave dual-passband filter and design method therefor |
| CN105449322B (en) * | 2015-11-30 | 2018-01-23 | 超视距成都科技有限责任公司 | Millimeter wave double-passband filter and its design method |
| CN106410337A (en) * | 2016-09-29 | 2017-02-15 | 上海航天测控通信研究所 | Single-cavity substrate integrated waveguide multi-transmission-zero-point filter |
| CN110416674A (en) * | 2019-08-22 | 2019-11-05 | 华东师范大学 | Single-chamber Dual-band microwave filter based on co-planar waveguide |
| CN110416674B (en) * | 2019-08-22 | 2024-03-22 | 华东师范大学 | Single-cavity double-frequency-band microwave filter based on coplanar waveguide |
| CN114335937A (en) * | 2021-12-20 | 2022-04-12 | 南京邮电大学 | Substrate integrated cavity slow wave hybrid electromagnetic coupling filter |
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