CN115394664B - Manufacturing method of power module comprising aluminum and ceramic substrate and power module - Google Patents
Manufacturing method of power module comprising aluminum and ceramic substrate and power module Download PDFInfo
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- CN115394664B CN115394664B CN202211019177.7A CN202211019177A CN115394664B CN 115394664 B CN115394664 B CN 115394664B CN 202211019177 A CN202211019177 A CN 202211019177A CN 115394664 B CN115394664 B CN 115394664B
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- 239000000758 substrate Substances 0.000 title claims abstract description 145
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 102
- 239000000919 ceramic Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 26
- 238000003466 welding Methods 0.000 claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 3
- 238000007648 laser printing Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 229920006335 epoxy glue Polymers 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 8
- 230000010354 integration Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 4
- 238000004590 computer program Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to the field of semiconductor processing, in particular to a power module manufacturing method comprising aluminum and a ceramic substrate and a power module, wherein the power module comprises the following components: the LED comprises an aluminum substrate assembly, a first driving chip, a first power element, a first diode chip and a first pin, wherein the aluminum substrate assembly comprises an aluminum substrate, and a first passive device, a first driving chip, a first power element, a first diode chip and a first pin which are fixedly arranged on the surface of the aluminum substrate; the ceramic substrate assembly comprises a ceramic substrate, and a second passive device, a second driving chip, a second power element, a second diode chip and a second pin which are fixedly arranged on the surface of the ceramic substrate; and the substrate curing layer is used for fixing the aluminum substrate assembly and the ceramic substrate assembly. According to the invention, after the power modules with different materials are respectively subjected to surface mounting and solidification, the different power modules are packaged together through the resin frame to be manufactured into the power module with all-in-one material, so that the integration level of the power module is improved.
Description
Technical Field
The invention relates to the field of semiconductor processing, in particular to a power module manufacturing method and a power module comprising aluminum and a ceramic substrate.
Background
The power module, i.e. the modularized intelligent power system MIPS (Module Intelligent Power System), is a power driving product combining power electronics and integrated circuit technology, and the MIPS integrates a power switching device and a driving circuit, and also has built-in fault detection circuits such as overvoltage, overcurrent and overheat, and can send detection signals to a CPU (Central Processing Unit, a central processing unit) or a DSP (Digital Signal Processing ) for interrupt processing. The MIPS is generally composed of a high-speed low-power-consumption die and an optimized gate-level driving circuit, and a fast protection circuit, and can protect the module itself of the MIPS from damage even if a load accident or misuse occurs. The MIPS generally uses an IGBT (Insulated Gate Bipolar Transistor ) as a power switching element, and incorporates an integrated structure of a current sensor and a driving circuit, and in the prior art, the IGBT generally uses a 6-way three-phase full bridge drive as a high voltage drive IC (Integrated Circuit) to drive the IGBT.
Along with the progress of semiconductor technology and the requirements of energy conservation and emission reduction, more and more power modules are applied to products such as household appliances, new energy automobiles and the like, a plurality of modules with different powers are used on a plurality of products, an aluminum substrate with relatively smaller power is used as a substrate for the modules with relatively lower power, so that the production cost is reduced, and an insulating ceramic substrate is used as the substrate for the modules with high power. Several modules with the same power used on the same terminal product can be integrated on the same aluminum substrate to manufacture into multiple-in-one modules so as to reduce occupied installation space, and modules with larger power difference cannot be integrated together due to different substrate materials, so that the integration level of the existing power module is not very high when the multifunctional power module is realized, and the whole volume of the space where the power module is located is affected.
Disclosure of Invention
The invention provides a power module manufacturing method and a power module comprising aluminum and a ceramic substrate, and aims to solve the problem that the integration level is low because the existing power module cannot integrate different substrate materials.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a power module including aluminum and a ceramic substrate, the method including the steps of:
s1, carrying out tin plating on a position, on which a device needs to be mounted, of an aluminum substrate;
s2, carrying out first passive device patch on the aluminum substrate;
s3, mounting a first driving chip, a first power element and a first diode chip on the aluminum substrate;
s4, mounting a first pin on the aluminum substrate;
s5, solidifying the first passive device, the first driving chip, the first power element and the first diode chip on the aluminum substrate through a high-temperature reflow method;
s6, welding an aluminum wire with a first diameter between the drain electrode of the first power element and the aluminum substrate to realize electric connection;
s7, welding an aluminum wire with a second diameter between the first diode chip and the aluminum substrate to realize electric connection;
s8, welding aluminum wires with the third diameter between the first driving chip and the aluminum substrate and between the grid electrode of the first power element and the aluminum substrate so as to realize electric connection;
s9, spot tin is carried out at the position where the device is required to be attached on the ceramic substrate;
s10, carrying out second passive device patch on the ceramic substrate;
s11, mounting a second driving chip, a second power element and a second diode chip on the ceramic substrate;
s12, mounting a second pin on the ceramic substrate;
s13, curing the second passive device, the second driving chip, the second power element and the second diode chip on the ceramic substrate through the high-temperature reflow method;
s14, welding an aluminum wire with a first diameter between the drain electrode of the second power element and the ceramic substrate to realize electric connection;
s15, welding an aluminum wire with a second diameter between the second diode chip and the ceramic substrate to realize electric connection;
s16, welding aluminum wires with the third diameter between the second driving chip and the ceramic substrate and between the grid electrode of the second power element and the ceramic substrate so as to realize electric connection;
s17, placing the aluminum substrate and the ceramic substrate assembly into a resin frame;
s18, injecting epoxy resin glue into the resin frame from the upper parts of the aluminum substrate and the ceramic substrate, and performing high-temperature curing to obtain a power module;
s19, performing laser printing on the power module shell;
and S20, blanking and bending pins in the power module to complete packaging of the power module.
Further, in step S1 and step S9, soldering is performed using a solder paste having a melting point of 220 ℃.
Further, the high temperature reflow method in step S5 and step S13 is specifically to set the peak temperature to 230 degrees celsius, and the device to be cured is placed in a reflow oven for curing.
Still further, the first diameter is 20 mils.
Still further, the second diameter is 15 mils.
Still further, the third diameter is 1.5mil.
In a second aspect, an embodiment of the present invention further provides a power module, including:
the LED comprises an aluminum substrate assembly, a first driving chip, a first power element, a first diode chip and a first pin, wherein the aluminum substrate assembly comprises an aluminum substrate, and a first passive device, a first driving chip, a first power element, a first diode chip and a first pin which are fixedly arranged on the surface of the aluminum substrate;
the ceramic substrate assembly comprises a ceramic substrate, and a second passive device, a second driving chip, a second power element, a second diode chip and a second pin which are fixedly arranged on the surface of the ceramic substrate;
the substrate curing layer is used for fixing the aluminum substrate assembly and the ceramic substrate assembly;
the power module is manufactured by the method for manufacturing the power module comprising aluminum and a ceramic substrate.
Further, the substrate curing layer is epoxy resin glue.
The invention has the beneficial effects that the power modules with different materials are respectively pasted and solidified, and then the different power modules are packaged together through the resin frame to be manufactured into the power module with all-in-one material, so that the integration level of the power module is improved, and the installation space of the power module is further saved.
Drawings
FIG. 1 is a schematic diagram of an aluminum substrate assembly of a power module according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a bonding wire in an aluminum substrate assembly of a power module according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a ceramic substrate assembly of a power module according to an embodiment of the present invention;
fig. 4 is a schematic diagram of bonding wires in a ceramic substrate assembly of a power module according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a power module according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a curing body in a power module according to an embodiment of the present invention;
fig. 7 is a schematic diagram of filling silica gel in a power module according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The embodiment of the invention provides a power module manufacturing method comprising aluminum and a ceramic substrate, which comprises the following steps of:
s1, carrying out tin plating on a position, on which a device needs to be mounted, of an aluminum substrate;
s2, carrying out first passive device patch on the aluminum substrate;
s3, mounting a first driving chip, a first power element and a first diode chip on the aluminum substrate;
s4, mounting a first pin on the aluminum substrate;
s5, solidifying the first passive device, the first driving chip, the first power element and the first diode chip on the aluminum substrate through a high-temperature reflow method;
s6, welding an aluminum wire with a first diameter between the drain electrode of the first power element and the aluminum substrate to realize electric connection;
s7, welding an aluminum wire with a second diameter between the first diode chip and the aluminum substrate to realize electric connection;
s8, welding aluminum wires with the third diameter between the first driving chip and the aluminum substrate and between the grid electrode of the first power element and the aluminum substrate so as to realize electric connection;
s9, spot tin is carried out at the position where the device is required to be attached on the ceramic substrate;
s10, carrying out second passive device patch on the ceramic substrate;
s11, mounting a second driving chip, a second power element and a second diode chip on the ceramic substrate;
s12, mounting a second pin on the ceramic substrate;
s13, curing the second passive device, the second driving chip, the second power element and the second diode chip on the ceramic substrate through the high-temperature reflow method;
s14, welding an aluminum wire with a first diameter between the drain electrode of the second power element and the ceramic substrate to realize electric connection;
s15, welding an aluminum wire with a second diameter between the second diode chip and the ceramic substrate to realize electric connection;
s16, welding aluminum wires with the third diameter between the second driving chip and the ceramic substrate and between the grid electrode of the second power element and the ceramic substrate so as to realize electric connection;
s17, placing the aluminum substrate and the ceramic substrate assembly into a resin frame;
s18, injecting epoxy resin glue into the resin frame from the upper parts of the aluminum substrate and the ceramic substrate, and performing high-temperature curing to obtain a power module;
s19, performing laser printing on the power module shell;
and S20, blanking and bending pins in the power module to complete packaging of the power module.
Further, in step S1 and step S9, soldering is performed using a solder paste having a melting point of 220 ℃.
Further, the high temperature reflow method in step S5 and step S13 is specifically to set the peak temperature to 230 degrees celsius, and the device to be cured is placed in a reflow oven for curing.
Still further, the first diameter is 20 mils.
Still further, the second diameter is 15 mils.
Still further, the third diameter is 1.5mil.
The invention has the beneficial effects that the power modules with different materials are respectively pasted and solidified, and then the different power modules are packaged together through the resin frame to be manufactured into the power module with all-in-one material, so that the integration level of the power module is improved, and the installation space of the power module is further saved.
An embodiment of the present invention further provides a power module 500 manufactured by the method for manufacturing a power module including aluminum and a ceramic substrate according to any one of the above embodiments, for convenience of explanation, please refer to fig. 1 to 7, the power module 500 specifically includes:
an aluminum substrate assembly 502, which includes an aluminum substrate 101, a first passive device 105, a first driving chip 102, a first power element 103, a first diode chip 104, and a first pin 106, which are fixedly arranged on the surface of the aluminum substrate; wherein, the drain electrode of the first power element 103 is electrically connected with the aluminum substrate 101 through a thick aluminum wire 204 with a first diameter; an electrical connection is made between the first diode chip 104 and the aluminum substrate 101 through a middle aluminum wire 203 having a second diameter; an electrical connection is made between the first driving chip 102 and the aluminum substrate 101 through a thin aluminum wire 201 having a third diameter; the gate of the first power element 103 is electrically connected to the aluminum substrate 101 through a thin aluminum wire 202 having a third diameter.
A ceramic substrate assembly 503, which includes a ceramic substrate 301, a second passive device 305, a second driving chip 302, a second power element 303, a second diode chip 304, and a second pin 306, which are fixedly arranged on the surface of the ceramic substrate; wherein, an electrical connection is realized between the drain electrode of the second power element 303 and the ceramic substrate 301 through a thick aluminum wire 404 with a first diameter; an electrical connection is made between the second diode chip 304 and the ceramic substrate 301 by means of a middle aluminum wire 403 having a second diameter; an electrical connection is made between the second driving chip 302 and the ceramic substrate 301 through a thin aluminum wire 401 having a third diameter; the gate of the second power element 303 is electrically connected to the ceramic substrate 301 through an aluminum thin wire 402 having a third diameter.
A substrate curing layer 501, the substrate curing layer 501 is used to fix the aluminum substrate assembly 502 and the ceramic substrate assembly 503.
Further, the substrate curing layer 501 is an epoxy resin glue, which specifically forms the curing body 600 and the filled silica gel 601 of the substrate curing layer 501.
Those skilled in the art will appreciate that implementing all or part of the above-described methods in accordance with the embodiments may be accomplished by way of a computer program stored on a computer readable storage medium, which when executed may comprise the steps of the embodiments of the methods described above. The storage medium may be a magnetic disk, an optical disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM) or the like. For example, in one possible implementation manner, the computer readable storage medium stores a computer program, where the computer program when executed by a processor implements each process and step in the scheduling method for RB resources of a 5G network base station based on power requirements provided by the embodiments of the present invention, and the same technical effects can be achieved, so that repetition is avoided and redundant descriptions are omitted here.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) comprising instructions for causing a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method according to the embodiments of the present invention.
While the embodiments of the present invention have been illustrated and described in connection with the drawings, what is presently considered to be the most practical and preferred embodiments of the invention, it is to be understood that the invention is not limited to the disclosed embodiments, but on the contrary, is intended to cover various equivalent modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (8)
1. A method of manufacturing a power module comprising aluminum and a ceramic substrate, the method comprising the steps of:
s1, carrying out tin plating on a position, on which a device needs to be mounted, of an aluminum substrate;
s2, carrying out first passive device patch on the aluminum substrate;
s3, mounting a first driving chip, a first power element and a first diode chip on the aluminum substrate;
s4, mounting a first pin on the aluminum substrate;
s5, solidifying the first passive device, the first driving chip, the first power element and the first diode chip on the aluminum substrate through a high-temperature reflow method;
s6, welding an aluminum wire with a first diameter between the drain electrode of the first power element and the aluminum substrate to realize electric connection;
s7, welding an aluminum wire with a second diameter between the first diode chip and the aluminum substrate to realize electric connection;
s8, welding aluminum wires with the third diameter between the first driving chip and the aluminum substrate and between the grid electrode of the first power element and the aluminum substrate so as to realize electric connection;
s9, spot tin is carried out at the position where the device is required to be attached on the ceramic substrate;
s10, carrying out second passive device patch on the ceramic substrate;
s11, mounting a second driving chip, a second power element and a second diode chip on the ceramic substrate;
s12, mounting a second pin on the ceramic substrate;
s13, curing the second passive device, the second driving chip, the second power element and the second diode chip on the ceramic substrate through the high-temperature reflow method;
s14, welding an aluminum wire with a first diameter between the drain electrode of the second power element and the ceramic substrate to realize electric connection;
s15, welding an aluminum wire with a second diameter between the second diode chip and the ceramic substrate to realize electric connection;
s16, welding aluminum wires with the third diameter between the second driving chip and the ceramic substrate and between the grid electrode of the second power element and the ceramic substrate so as to realize electric connection;
s17, placing the aluminum substrate and the ceramic substrate assembly into a resin frame;
s18, injecting epoxy resin glue into the resin frame from the upper parts of the aluminum substrate and the ceramic substrate, and performing high-temperature curing to obtain a power module;
s19, performing laser printing on the power module shell;
and S20, blanking and bending pins in the power module to complete packaging of the power module.
2. The method of manufacturing a power module including aluminum and ceramic substrates according to claim 1, wherein in step S1 and step S9, soldering is performed using a solder paste having a melting point of 220 ℃.
3. The method of manufacturing a power module including aluminum and ceramic substrates according to claim 1, wherein the high temperature reflow method of step S5 and step S13 is to set a peak temperature to 230 degrees celsius and place the device to be cured into a reflow oven for curing.
4. The method of manufacturing a power module comprising aluminum and a ceramic substrate of claim 1, wherein the first diameter is 20 mils.
5. The method of manufacturing a power module comprising aluminum and a ceramic substrate of claim 1, wherein the second diameter is 15 mils.
6. The method of manufacturing a power module comprising aluminum and ceramic substrate of claim 1, wherein the third diameter is 1.5mil.
7. A power module, comprising:
the LED comprises an aluminum substrate assembly, a first driving chip, a first power element, a first diode chip and a first pin, wherein the aluminum substrate assembly comprises an aluminum substrate, and a first passive device, a first driving chip, a first power element, a first diode chip and a first pin which are fixedly arranged on the surface of the aluminum substrate;
the ceramic substrate assembly comprises a ceramic substrate, and a second passive device, a second driving chip, a second power element, a second diode chip and a second pin which are fixedly arranged on the surface of the ceramic substrate;
the substrate curing layer is used for fixing the aluminum substrate assembly and the ceramic substrate assembly;
the power module manufactured by the manufacturing method of a power module comprising aluminum and a ceramic substrate according to any one of claims 1 to 6.
8. The power module of claim 7, wherein the substrate curing layer is an epoxy glue.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211019177.7A CN115394664B (en) | 2022-08-24 | 2022-08-24 | Manufacturing method of power module comprising aluminum and ceramic substrate and power module |
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| CN202211019177.7A CN115394664B (en) | 2022-08-24 | 2022-08-24 | Manufacturing method of power module comprising aluminum and ceramic substrate and power module |
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| CN115394664B true CN115394664B (en) | 2024-03-19 |
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| US10211158B2 (en) * | 2014-10-31 | 2019-02-19 | Infineon Technologies Ag | Power semiconductor module having a direct copper bonded substrate and an integrated passive component, and an integrated power module |
| EP3203509B1 (en) * | 2016-02-04 | 2021-01-20 | Services Pétroliers Schlumberger | Double-sided hermetic multichip module |
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| CN104900768A (en) * | 2015-04-14 | 2015-09-09 | 芜湖九瓷电子科技有限公司 | Preparation method for alumina ceramic substrate for LED |
| JP2019197842A (en) * | 2018-05-11 | 2019-11-14 | 三菱電機株式会社 | Power module, electric power conversion system, and method of manufacturing power module |
| CN114899162A (en) * | 2022-05-10 | 2022-08-12 | 广东汇芯半导体有限公司 | Module and manufacturing method thereof |
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