CN115394253A - Integrated optical structure with self-luminous display and image sensor co-layer mixed arrangement - Google Patents
Integrated optical structure with self-luminous display and image sensor co-layer mixed arrangement Download PDFInfo
- Publication number
- CN115394253A CN115394253A CN202211155009.0A CN202211155009A CN115394253A CN 115394253 A CN115394253 A CN 115394253A CN 202211155009 A CN202211155009 A CN 202211155009A CN 115394253 A CN115394253 A CN 115394253A
- Authority
- CN
- China
- Prior art keywords
- self
- image
- luminous display
- layer
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 57
- 239000010408 film Substances 0.000 claims description 25
- 239000002096 quantum dot Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000005286 illumination Methods 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000003384 imaging method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 230000010354 integration Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/142—Adjusting of projection optics
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
Abstract
The invention relates to an integrated optical structure with a self-luminous display and an image sensor arranged in a co-layer mixed mode. Comprises a lens group, a self-luminous micro-projection display unit and an image sensing unit for shooting and photographing, which are mixed and arranged to be laminated. The self-luminous micro-projection display unit and the image sensing unit for shooting and photographing are mixed and laminated to form a self-luminous display pixel array and an image sensing array of the image sensor, and the image sensing array and the self-luminous display pixel array are mixed and arranged according to actual use requirements and are respectively used as a luminous source for micro-projection display and an optical sensor for receiving external light. When the structure is used as a micro projection display engine, the self-luminous display pixel array is lighted in an active array mode through the TFT circuit, and light rays are projected and imaged through the lens; when the structure is used as a shooting optical module, light rays captured by the lens group are converged on the image sensitive array, and image information on the image sensitive unit forms a digital image after being processed by a compensation algorithm. The invention can realize the quick switching between the micro-projection display and the portable camera module.
Description
Technical Field
The invention relates to the field of projection and imaging optics, in particular to an integrated optical structure with self-luminous display and image sensor co-layer mixed arrangement.
Background
In recent years, micro-LED/Micro-OLED display technology has been recognized as the next generation display technology with revolutionary breakthrough. The current common display technology can be divided into two major camps: LCD technology based on backlight units and OLED technology without backlight units. Currently, display products in the market still mainly use LCDs, which are favored by the market due to their high stability, low power consumption, low cost, high brightness and thin thickness, and the recent LCD display screens based on Mini-LED backlights have higher contrast and thinner thickness comparable to that of OLEDs, and are therefore replacing OLEDs. However, the LCD technology also has a drawback that cannot be solved, and since the LCD relies on liquid crystal to regulate and control light emission, the backlight source always works, so that a complete dark state cannot be achieved, and due to the existence of the backlight plate and the liquid crystal layer, the size and thickness of the LCD cannot be reduced to application scenes such as near-to-eye display. The OLED is a pixelized self-luminous display technology which is applied to the consumption field in a large scale and is widely applied to a mobile phone screen. The OLED structure does not need a backlight plate and a liquid crystal layer, can achieve a completely dark state, has higher contrast and lower power consumption and size compared with an LCD, and is suitable for a micro display scene. However, the lifetime and brightness problems remain the biggest drawbacks of OLEDs and are not mature enough for applications in AR/VR and microdisplay applications. Compared with the LCD and OLED display technologies, the Micro-LED/Micro-OLED has the characteristics of small size, high brightness, high contrast, long service life and the like, and combines the advantages of the Micro-LED and the Micro-OLED. The Micro-LED/Micro-OLED has the same structure as the traditional LED/OLED, and can be regarded as a miniaturized ultra-Micro LED/OLED array. Due to the reduction of the size, the unit light emitting efficiency of the LED/OLED array is continuously improved, so that a smaller display screen has higher resolution, brightness and faster response speed, and the green brightness of the LED/OLED array reaches up to 200 ten thousand nits as reported in the mass production of 0.13-inch RGB three-color Micro-LED chips. Therefore, the appearance of Micro-LEDs/Micro-OLEDs provides a necessary technical foundation for the field of near-eye displays and Micro-projection displays, which currently suffer from development bottlenecks due to the lack of high brightness, high resolution and high response speed Micro-displays.
Conventional projection optical systems can be classified into three types according to the principle of light modulation: LCD, LCoS and DLP projection, the light path designs of these technologies are different, but the systems for light path collimation and light uniformization inside the technologies are very complex, so that the volume of the existing projection system is difficult to be further reduced. With the advent of Micro-LED/Micro-OLED, micro projection systems using Micro-LED/Micro-OLED light sources are coming to the unprecedented opportunity, namely self-luminous projection. The light source used by the projection engine with the traditional structure is non-pixilated, only has the function of illumination, and needs a plurality of relay systems to integrate the disordered emergent light spots into uniform and collimated light spots for modulation imaging. The Micro-LED/Micro-OLED light source is pixilated, and light emitted can be imaged, so that the structure of the whole projection system is greatly simplified, only three parts, namely a display chip, a collimation structure and a projection lens, are needed, the size is greatly reduced, and Micro projection is really realized. The color combination schemes of the current Micro-LED/Micro-OLED self-luminous projection system comprise three schemes: the monolithic integration, the two-way color combination and the three-way color combination are realized, wherein the two-way color combination and the three-way color combination both need a color combination prism, the system volume is greatly increased, and the monolithic integration scheme adopts blue Micro-LED/Micro-OLED to excite red and green quantum dots, so that the RGB three colors are mixed with light emitted from a light path, the optimal solution for realizing the minimization of a projection system is realized, and the overall size of the monolithic integration is enough to be applied to portable digital products
That is, mass production of Micro-LED chips has been possible to achieve a pixel density of 6000ppi, which means that even if Micro-LED/Micro-OLED light emitting units are arranged dispersedly in a one-inch light emitting surface, the resolution of the array can be brought to a high definition level while maintaining a large aperture ratio. At present, the mobile phone camera is developed for many years, the sensor pixel is developed from 30 ten thousand to 4800 ten thousand today, the size of an image sensor is increased from 1/10 inch to 1/1.12 inch today, the size of the largest mass production mobile phone CMOS sensor is close to one inch, and the mobile phone camera has extremely high hardware imaging quality. The larger and larger photosensitive area and the tighter arrangement interval bring more performance redundancy to the hardware quality of the portable camera, so that more diversified structures and functions can be realized. Because the self-luminous display pixel unit of the Micro-LED/Micro-OLED and the image sensor image sensing unit of the portable camera device have similar structural characteristics in arrangement mode, unit size and driving implementation, the self-luminous display pixel unit and the image sensor image sensing unit can be packaged in an active layer of the same laminated structure, a matched lens group is arranged at the front end of the self-luminous display pixel unit and is attached to the packaging laminated layer, and the integration and use of projection and camera shooting functions on the same structure can be realized. Meanwhile, the structure depends on the small size characteristics of the self-luminous display pixel unit and the image sensor image sensing unit, and the self-luminous display pixel unit and the image sensor image sensing unit are easy to be embedded into digital products such as mobile phones and tablet computers as a functional module and serve as an extended function of a portable application scene.
Disclosure of Invention
The invention aims to provide an integrated optical structure with self-luminous display and image sensor in a co-layer mixed arrangement, which is used for realizing module integration of self-luminous micro-projection and the image sensor, can realize quick switching of a projection function and a camera shooting function, has a compact structure, a simple design and high integration level, and is particularly suitable for being applied to portable digital products.
In order to achieve the purpose, the technical scheme of the invention is as follows: an integrated optical structure with self-luminous display pixels and image sensors arranged in a co-layer mixing manner comprises a lens group and a mixed arrangement layer (hereinafter referred to as a mixed arrangement layer) of the self-luminous display pixels and the image sensors for shooting and shooting; the lens group adopts a spherical/aspherical sequential lens group, and can be designed into a fixed focus/zooming mode according to specific requirements; the mixed distribution layer comprises a thin film packaging layer, a self-luminous display pixel array capable of being used as a projection image source, an image sensor image sensitive array, a Thin Film Transistor (TFT) driving film layer and a substrate base plate; the thin film packaging layer covers the self-luminous display pixel array, the image sensor image sensitive array and the corresponding TFT driving film layer and is attached to the substrate; the self-luminous display pixel array comprises self-luminous display pixel units such as but not limited to Micro-LEDs, micro-OLEDs and the like, the TFT driving film layer is used for independently controlling and lighting, and the spacing parts between the self-luminous display pixel units and the image sensor image sensitive array are filled with epoxy resin; the image sensor image-sensitive array in the mixed arrangement layer is composed of Photosensitive Diodes (PDs), the TFT drive film layer drives the film layer to work, the adopted structure comprises but is not limited to photosensitive elements such as CMOS, CCD and the like, and imaging information is optimized by an image compensation algorithm.
Further, focusing of the lens group includes, but is not limited to, overall focusing, zooming, and the like. The TFT driving film layer drives the self-luminous display pixel array or the image sensor image sensitive array to work, and the optical structure can be switched between a projection display mode and a camera shooting mode. When the optical structure is in a projection display mode, the self-luminous display pixel array in the mixed arrangement layer is selectively lightened by the active driving matrix of the TFT driving film layer below according to the RGB information of the image, the emitted light is focused and projected on an external screen or human eyes to form an image after passing through the lens, and the projected image can be enlarged or reduced when a zoom lens is adopted; when the optical structure is in a shooting mode, the imaging of the external object is focused on the image sensor image sensitive array of the mixed arrangement layer, and the formed electric signal is processed and imaged by the TFT driving film layer and the corresponding signal circuit.
Furthermore, the total length of the optical structure is controlled within the range of 1mm to 10mm, and the optical structure is compatible with the existing digital product containing a camera; the lens of the lens group mainly adopts glass, plastic or crystal materials, and the lens group is compatible with structural types such as Fresnel optical surface, super surface, folding optical path, movable optical zooming and the like.
Further, the thin film encapsulation layer adopts materials including but not limited to SiOx (silicon oxide) and SiON (silicon oxynitride), and the thickness thereof is added to the design of the lens group as an optical flat plate; the substrate material includes, but is not limited to, glass, monocrystalline silicon, etc., which serves as a base for the TFT driving film layer and the corresponding circuit.
Furthermore, a collimating micro-lens is arranged on each self-luminous display pixel unit, and the collimating micro-lens is used for shrinking light beams and enabling the chief ray at the center of the luminous unit to be deflected within the aperture range of the lens; the collimating micro-lens has a quasi-hemispherical contour, the position deviation of the collimating micro-lens is allowed to deviate within 20 degrees towards any direction on the center normal of the light emitting unit, the specific deviation amount is different according to the different positions of the center normal of the light emitting unit and the light emitting array, the divergence angle of each self-luminous display pixel is corrected, so that the emergent angle of the total light rays is collimated and contracted, and the light efficiency and the uniformity under a projection mode are improved.
Furthermore, the pixel unit of each self-luminous display pixel array can emit RGB three-color light to realize full-color; the pixel units can be in a flip-chip, normal-mounted and vertical structure, P, N electrodes of the structure are welded with reserved metal contacts of the TFT film driving film layer on the lower layer respectively, and each pixel unit can be independently addressed and lightened.
Further, the way of realizing full-color of each self-luminous display pixel unit includes, but is not limited to, RGB independent chip and quantum dot color conversion. In the RGB independent chip, each pixel unit of the self-luminous display pixel array comprises three independent laminated structures, light-emitting quantum well layers in the structure respectively emit R, G, B three-color light, and black matrixes are arranged on the side walls of the laminated structures to prevent crosstalk of the three-color light; in the quantum dot color conversion structure, a light emitting layer of a pixel unit of the self-luminous display pixel array emits blue light, a red quantum dot conversion layer and a green quantum dot conversion layer are added after top sapphire glass is stripped, a blue light channel is reserved, the pixel unit excites the blue light with different intensities through currents with different intensities, the blue light forms RGB (red, green, blue and blue) three-color light with different proportions after passing through the quantum dot conversion layer, and a black matrix is arranged on the side wall of the quantum dot conversion layer to prevent crosstalk of the three-color light.
Further, the arrangement mode of the self-luminous display pixel units and the image sensing units of the image sensors on the mixed arrangement layer can adopt a sub-matrix arrangement mode according to the use requirement, and the specific surface type can adopt shapes including but not limited to interval cross arrangement, squared figure, cross shape, round shape and the like; the distance between the sub-matrixes is not more than 3-10 mu m, and high arrangement density is kept; the height of the pixel units in the sub-matrix should not be too high, so as to prevent the blocking of the large-angle sensitization of the image sensing units.
Further, the arrangement mode includes, but is not limited to, image-sensitive unit densely paving, pixel unit scattered paving, pixel unit densely paving, image-sensitive unit scattered paving and the like; when the image sensing units are densely paved and the pixel units are scattered, the image resolution of a projection mode is determined by the number of the pixel units, and human eyes usually need at least 60PPD angular resolution, so the arrangement density of the pixel units and the field angle of a lens at least meet 60PPD, under the condition, the pixel units are arranged as many as possible, the maximum effective photosensitive area is reached, and the maximization of the hardware quality of the image sensor is realized; when the pixel units are densely paved and the image sensitive units are scattered, the image sensitive units need to be in a large-area surface shape, and a certain interval is kept between the edge of the image sensitive unit and the pixel units, so that the image sensitive units can fully receive light in a limited light sensitive area, and better image quality is obtained.
Further, an illumination compensation algorithm including but not limited to GrayWorld color equalization algorithm, reference white algorithm-based illumination compensation algorithm and the like is adopted, the core is to compensate illumination information of the image sensitive units on the image sensor, illumination information is obtained from adjacent image sensitive units of the image sensitive units needing compensation, RGB gray values of the adjacent image sensitive units are obtained, an average value is obtained and assigned to the image sensitive units needing compensation, and finally illumination information of a target image sensitive unit is obtained by weighting the average value and an initial value.
Compared with the prior art, the invention has the following beneficial effects:
the invention has complete structure and function and can realize the quick switching of the projection/camera shooting mode of the structure. The projection mode is that the self-luminous pixelized micro display screen is directly projected and imaged through the lens group; the camera shooting function is imaged by a large-size image sensor, the structure is simple, the integration level is high, the process is easy to realize, and the camera shooting device is particularly suitable for being applied to portable digital products.
Drawings
FIG. 1 is a vertical cross-sectional view of an integrated optical structure according to an embodiment of the present invention.
Fig. 2 is a Y-Z direction optical path diagram of the integrated optical structure according to the embodiment of the present invention when the projection/imaging function is implemented.
Fig. 3 is a schematic diagram of a stack-up split of an active portion in a unified optical structure according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a self-luminous display pixel unit according to an embodiment of the invention.
Fig. 5 is an example of the shape of sub-arrays on a hybrid lay-out layer according to an embodiment of the present invention.
FIG. 6 shows an example of an arrangement of pixel units and image sensing units on a mixed arrangement layer according to an embodiment of the present invention.
Detailed Description
The following describes an integrated optical structure in which self-luminous display pixels and an image sensor are arranged in a co-layer mixing manner, with reference to the accompanying drawings and embodiments. The present invention is further described in the preferred embodiments, which should not be construed as limited to the embodiments set forth herein, nor should it be construed as limited to the scope of the invention which is to be protected by the claims. In this patent, the lens set, the self-luminous micro-projection display unit and the image sensing unit for image capture and photography are mixed and stacked, and the like, and the parameters and the geometric dimensions thereof should not be considered to be strictly specified. Here, the reference figures are schematic views of idealized embodiments of the present invention, and the illustrated embodiments of the present invention should not be considered limited to the specific shapes of the regions shown in the figures, but include other shapes that can achieve the same function. The illustration of the fittings in the present embodiment is schematically, but this should not be construed as limiting the scope of the invention.
In embodiment 1 of the present invention, fig. 1 shows a vertical cross section of an integrated optical structure for realizing self-luminous micro-projection display and image pickup optical module, which includes a lens group 1, a thin film encapsulation layer 2, a mixed arrangement layer 3 (hereinafter referred to as "mixed arrangement layer") of self-luminous display pixels and image sensors for image pickup, a TFT driving film layer 4 and a substrate 5, which are sequentially arranged from top to bottom. Wherein, the lens group 1 can be formed by spherical/aspherical lens, the lower part is bonded with the thin film packaging layer 2, the thickness of the thin film packaging layer 2 is used as the optical flat plate of the lens group 1 and the mixed distribution layer 3 to be added into the design of the lens group 1 and is covered with the mixed distribution layer 3 and the TFT driving film layer 4; the thin film encapsulation layer 2 and the substrate 5 are made of materials including but not limited to SiOx (silicon oxide), siON (silicon oxynitride), single crystal silicon, and the like, and the cell gap in the mixed arrangement layer is filled with a transparent polymer such as epoxy resin.
In embodiment 2 of the present invention, fig. 2 shows a Y-Z direction optical path of the integrated optical structure. The lens assembly 1 can be designed to be in a focusing mode of fixed focus/zooming when the projection/photographing mode is switched. The fixed focus focusing is realized by moving the whole lens group without changing the focal length, the focusing range is mainly determined by the possible height difference between the self-luminous pixel unit 31 and the image sensor image sensing unit 32, the structure is relatively simple and easy to realize, but the degree of freedom is low, and the sizes of a projection picture and a shooting range cannot be changed; the zoom focusing is realized by moving a zoom group in the zoom lens, the lens structure is relatively complex, but the change of a projection picture and an imaging range can be realized by zooming, so that the zoom lens is more suitable for a portable use scene, a specific focusing mode can be flexibly designed according to use requirements, and the focusing mode comprises but is not limited to the two methods. In the optical path shown in fig. 2, when the optical structure is in the projection mode, the lens group 1 adopts a reverse design method, the image height is the half width of the effective area in the mixed arrangement layer 3, the thin film encapsulation layer 2 is used as an optical flat plate for adjustment, and light rays emitted by the pixel units 31 in the mixed arrangement layer 3 are projected on an external screen through the lens from the reverse optical path; when the optical structure is in a shooting mode, external light is focused on the image sensor image sensing unit 32 in the mixed arrangement layer 3 through the lens group 1, and formed electric signals are processed and imaged by a chip; in the optical design, in order to reduce the influence of stray light to the maximum extent, the edge of an effective area on the mixed arrangement layer 3 is reserved with the edge of the layer by 0.2 to 1mm, and the edge light of the active area does not exceed the edge of the thin film packaging layer 2; in order to enable the optical structure to be embedded into portable equipment, the total length of a system in a projection mode is controlled within 1mm-10mm, and the external zoom offset of a zoom lens is not more than 2mm; the MTF cut-off frequency of the lens group 1 is calculated according to the smaller pixel size of the self-luminous display pixel unit 31 and the image sensor image sensing unit 32; the lens group 1 mainly adopts glass, plastic or crystal materials, and is compatible with structural types such as Fresnel optical surface, super surface, folded light path, movable optical zooming and the like.
In embodiment 3 of the present invention, fig. 3 shows the stack splitting of the active part in the integrated optical structure. The self-luminous display pixel unit 31 can be in a flip-chip, front-mounted and vertical structure, the P, N electrodes of three independent laminated structures are arranged at the bottom or the top and welded with the light-emitting unit driving circuit contact 41 of the lower TFT driving film layer 4, each independent laminated layer is independently addressed and lightened by an active driving matrix consisting of a thin film transistor circuit 43, and the front-mounted and vertical structures need to be welded by using flying wires and contacts; the image sensor image sensing unit 32 is composed of a Photosensitive Diode (PD), and is welded with an image sensing power supply driving circuit contact 42 of the TFT driving film layer 4 below, the contact is connected with a thin film transistor circuit 43, and an electric signal flows to a signal amplifying circuit and a compensating circuit through the contact to be processed and imaged, and then is displayed on a screen through a compensating algorithm.
In embodiment 4 of the present invention, fig. 4 shows a structure of a self-light emitting display pixel unit 31. The way of realizing full-color by the self-luminous display pixel unit 31 includes, but is not limited to, RGB independent chip and quantum dot color conversion. In the RGB independent chip, each self-luminous display pixel unit 31 includes three independent stacked structures, in which light-emitting quantum well layers respectively emit R, G, B three-color light, and black matrixes 312 are disposed on sidewalls of the stacked structures to prevent crosstalk of the three-color light; in the quantum dot color conversion structure, a light emitting layer 311 of a self-luminous display pixel unit 31 emits blue light, and a red and green quantum dot conversion layer 313 is added after top sapphire glass is stripped and a blue light channel is reserved; the self-luminous display pixel unit 31 excites blue light with different intensities through currents with different intensities, the blue light forms RGB three-color light with different proportions after passing through the quantum dot conversion layer 313, and a black matrix 312 is arranged on the side wall of the quantum dot conversion layer 313 to prevent crosstalk of the three-color light; a collimating micro-lens 314 is disposed on each self-luminous display pixel unit 31 for shrinking the light beam and deflecting the chief ray at the center of the light-emitting unit to the aperture range of the lens; the collimating micro-lens 314 has a quasi-hemispherical contour, the position deviation of the collimating micro-lens is allowed to be within 20 degrees of deviation to any direction on the center normal of the light emitting unit, the specific deviation amount is different according to the position difference between the self-luminous display pixel unit 31 and the center normal of the light emitting array, the divergence angle of each self-luminous display pixel unit 31 is corrected, so that the emergent angle of the total light rays is collimated and contracted, and the light efficiency and the uniformity under the projection mode are improved;
in embodiment 5 of the present invention, fig. 5 shows an example of the shape of the sub array on the hybrid arrangement layer 3. The self-luminous display pixel units 31 and the image sensor pixel sensitive units 32 can be arranged in a sub-matrix mode according to the use requirement, and the specific surface type can adopt shapes including but not limited to interval cross arrangement, squared figure, cross, circle and the like; the distance between the sub-matrixes is not more than 3-10 mu m, and the high arrangement density is kept; the height of the pixel units in the sub-matrix should not be too high, so as to prevent the blocking of the large-angle sensitization of the image sensing units.
In embodiment 6 of the present invention, fig. 6 shows an example of the arrangement of the self-light emitting display pixel unit 31 and the image sensor pixel unit 32 on the hybrid arrangement layer 3. The arrangement mode includes but is not limited to the mode of image sensitive unit densely paving, pixel unit scattered paving, pixel unit densely paving, image sensitive unit scattered paving and the like; when the image sensing units are densely paved and the pixel units are scattered, the image resolution of a projection mode is determined by the number of the pixel units, and human eyes usually need at least 60PPD angular resolution, so the arrangement density of the pixel units and the field angle of a lens at least meet 60PPD, under the condition, the pixel units are arranged as many as possible, the maximum effective photosensitive area is reached, and the maximization of the hardware quality of the image sensor is realized; when the pixel units are densely paved and the image sensitive units are scattered, the image sensitive units need to be in a large-area surface shape, and a certain interval is kept between the edge of the image sensitive unit and the pixel units, so that the image sensitive units can fully receive light in a limited light sensitive area, and better image quality is obtained.
In embodiment 7 of the present invention, a compensation algorithm used by an image sensor in an integrated optical structure in which self-luminous display pixels and the image sensor are arranged in a co-layer mixed manner includes, but is not limited to, a gray world color equalization algorithm, an illumination compensation algorithm based on a reference white algorithm, and the like, and the core of the compensation algorithm is to perform illumination information compensation on an image sensing unit on the image sensor, obtain illumination information on an adjacent image sensing unit of the image sensing unit to be compensated, obtain an RGB gray value thereof, obtain an average value and assign the average value to the image sensing unit to be compensated, and finally obtain illumination information of a target image sensing unit by weighting the average value and an initial value.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.
Claims (10)
1. An integrated optical structure with self-luminous display and image sensor co-layer mixed arrangement is characterized by comprising a lens group, self-luminous display pixels and a mixed arrangement layer of the image sensor for shooting and shooting; the lens group adopts a spherical/aspherical sequential lens group, and can be designed into a fixed focus/zooming mode according to specific requirements; the mixed arrangement layer of the self-luminous display pixels and the image sensors for shooting and shooting comprises a thin film packaging layer, a self-luminous display pixel array capable of being used as a projection image source, an image sensor image sensitive array, a TFT (thin film transistor) driving film layer and a substrate; the thin film packaging layer covers the self-luminous display pixel array, the image sensor image sensitive array and the TFT driving film layer and is attached to the substrate; the self-luminous display pixel array is composed of self-luminous display pixel units, the TFT driving film layer independently controls lighting, and the interval parts between the self-luminous display pixel units and the image sensor image sensitive array are filled with epoxy resin; the image sensor image sensitive array consists of photosensitive diodes, the TFT driving film layer drives the film layer to work, the adopted structure comprises a photosensitive element, and imaging information is optimized by an image compensation algorithm.
2. The unitary optical structure of claim 1, wherein focusing the lens assembly comprises a global focus, a zoom focus; the TFT driving film layer drives the self-luminous display pixel array or the image sensor image sensitive array to work, so that the optical structure can be switched between a projection display mode and a camera shooting mode; when the optical structure is in a projection display mode, the self-luminous display pixel array is selectively lightened by the active driving matrix of the TFT driving film layer according to image RGB information, emitted light rays are focused and projected on an external screen or human eyes to form an image after passing through a lens, and a projected image can be enlarged or reduced when a zoom lens is adopted; when the optical structure is in a shooting mode, the imaging of an external object is focused on the image sensor image sensitive array, and the formed electric signal is processed and imaged by the TFT driving film layer and the corresponding signal circuit.
3. The integrated optical structure with self-luminous display and image sensor co-layer mixed arrangement of claim 1, wherein the total length of the optical structure is controlled within 1mm-10mm, and the structure is compatible with existing digital products with cameras; the lens group is made of glass, plastic or crystal materials, and is compatible with a Fresnel optical surface, a super surface, a folded light path and a movable optical zooming structure.
4. A self-luminous display and image sensor co-layer hybrid integrated optical structure as claimed in claim 1, wherein the thin film encapsulation layer is made of materials including SiOx and SiON, and the thickness of the thin film encapsulation layer is added to the design of the lens group as an optical plate; the substrate base plate material comprises glass and monocrystalline silicon materials, and the substrate base plate material is used as a base of the TFT driving film layer and a corresponding circuit.
5. A self-luminous display and image sensor co-layer hybrid integrated optical structure as claimed in claim 1, wherein a collimating micro-lens is disposed on each of the self-luminous display pixel units for converging the light beam and deflecting the chief ray at the center of the light emitting unit within the aperture of the lens; the collimating micro-lens has a quasi-hemispherical contour, the position deviation of the collimating micro-lens is allowed to be within 20 degrees of deviation to any direction on the center normal of the self-luminous display pixel unit, the specific deviation amount is different according to the difference of the positions of the center normal of the self-luminous display pixel unit and the self-luminous display pixel array, the divergence angle of each self-luminous display pixel unit is corrected, so that the emergent angle of the total light rays is collimated and contracted, and the light efficiency and the uniformity in a projection mode are improved.
6. The integrated optical structure of the co-layer mixing arrangement of the self-luminous display and the image sensor as claimed in claim 1, wherein each of the self-luminous display pixel units can emit RGB lights to realize full-color; the self-luminous display pixel units can be of a flip-chip structure, a front-mounted structure and a vertical structure, P, N electrodes of the self-luminous display pixel units are respectively welded with reserved metal contacts of the TFT thin film driving film layer, and each self-luminous display pixel unit can be independently addressed and lightened.
7. The integrated optical structure of self-luminous display and image sensor co-layer hybrid arrangement of claim 6, wherein each of the self-luminous display pixel units realizes full color by means of RGB independent chips and quantum dot color conversion; in the RGB independent chip, each self-luminous display pixel unit comprises three independent laminated structures, light-emitting quantum well layers in the structure respectively emit R, G, B three-color light, and black matrixes are arranged on the side walls of the laminated structures to prevent crosstalk of the three-color light; in the quantum dot color conversion structure, a light emitting layer of a self-luminous display pixel unit emits blue light, a red quantum dot conversion layer and a green quantum dot conversion layer are added after top sapphire glass is stripped, a blue light channel is reserved, the self-luminous display pixel unit excites the blue light with different intensities through currents with different intensities, the blue light forms RGB (red, green, blue and blue) light with different proportions after passing through the quantum dot conversion layer, and a black matrix is arranged on the side wall of the quantum dot conversion layer to prevent crosstalk of three-color light.
8. The integrated optical structure of self-luminous display and image sensor co-layer hybrid arrangement of claim 1, wherein the self-luminous display pixels and the self-luminous display pixel units and the image sensor image sensing units on the image sensor hybrid arrangement layer for image pickup and photography are arranged in a sub-matrix arrangement manner according to the use requirement, and the specific surface shape can be in a shape including interval cross arrangement, nine-square lattice, cross shape and round shape; the distance between the sub-matrixes is not more than 3-10 mu m, and high arrangement density is kept; the height of the self-emissive display pixel cells in the sub-matrix is preferably such that they do not block the large angle exposure of the image sensing cells.
9. The integrated optical structure of the self-luminous display and image sensor co-layer hybrid arrangement of claim 8, wherein the arrangement mode adopts a mode comprising image-sensitive cells densely paved, pixel cells densely paved and pixel cells densely paved, and image-sensitive cells scattered; when the image sensing units are densely paved and the pixel units are scattered, the image resolution of a projection mode is determined by the number of the pixel units, and human eyes usually need at least 60PPD angular resolution, so the arrangement density of the pixel units and the field angle of a lens at least meet 60PPD, under the condition, the pixel units are arranged as many as possible, the maximum effective photosensitive area is reached, and the maximization of the hardware quality of the image sensor is realized; when the pixel units are densely paved and the image sensitive units are scattered, the image sensitive units need to be in a large-area surface shape, and a certain interval is kept between the edge of the image sensitive unit and the pixel units, so that the image sensitive units can fully receive light in a limited light sensitive area, and better image quality is obtained.
10. A self-luminous display and image sensor co-layer hybrid integrated optical structure as claimed in claim 1, wherein the compensation algorithm applied by the image sensor in the optical structure is characterized in that: the method adopts an illumination compensation algorithm comprising a GrayWorld color equalization algorithm and based on a reference white algorithm, and is characterized in that illumination information compensation is carried out on an image sensing unit on an image sensor, illumination information is acquired from adjacent image sensing units of the image sensing unit needing compensation, RGB gray values of the adjacent image sensing units are acquired, an average value is acquired and assigned to the image sensing unit needing compensation, and finally illumination information of a target image sensing unit is obtained by weighting the average value and an initial value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211155009.0A CN115394253A (en) | 2022-09-22 | 2022-09-22 | Integrated optical structure with self-luminous display and image sensor co-layer mixed arrangement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211155009.0A CN115394253A (en) | 2022-09-22 | 2022-09-22 | Integrated optical structure with self-luminous display and image sensor co-layer mixed arrangement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115394253A true CN115394253A (en) | 2022-11-25 |
Family
ID=84127500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211155009.0A Pending CN115394253A (en) | 2022-09-22 | 2022-09-22 | Integrated optical structure with self-luminous display and image sensor co-layer mixed arrangement |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115394253A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110519431A (en) * | 2019-09-03 | 2019-11-29 | 广东虹勤通讯技术有限公司 | A kind of electronic equipment |
| CN110855968A (en) * | 2019-12-04 | 2020-02-28 | 四川长虹电器股份有限公司 | Projection display apparatus using self-luminous pixel array device |
| CN111370461A (en) * | 2020-03-26 | 2020-07-03 | 武汉华星光电技术有限公司 | Display panel and display device |
| CN113504692A (en) * | 2021-06-30 | 2021-10-15 | 歌尔光学科技有限公司 | Camera shooting and projection integrated module and control method thereof |
-
2022
- 2022-09-22 CN CN202211155009.0A patent/CN115394253A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110519431A (en) * | 2019-09-03 | 2019-11-29 | 广东虹勤通讯技术有限公司 | A kind of electronic equipment |
| CN110855968A (en) * | 2019-12-04 | 2020-02-28 | 四川长虹电器股份有限公司 | Projection display apparatus using self-luminous pixel array device |
| CN111370461A (en) * | 2020-03-26 | 2020-07-03 | 武汉华星光电技术有限公司 | Display panel and display device |
| WO2021189632A1 (en) * | 2020-03-26 | 2021-09-30 | 武汉华星光电技术有限公司 | Display panel and display apparatus |
| CN113504692A (en) * | 2021-06-30 | 2021-10-15 | 歌尔光学科技有限公司 | Camera shooting and projection integrated module and control method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 张永超;赵录怀;谭仕强;: "新型光学对中自动测量装置的设计", 计算机测量与控制, no. 09, 19 September 2018 (2018-09-19), pages 40 - 44 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6570324B1 (en) | Image display device with array of lens-lets | |
| CN101971637B (en) | Projection system based on self emitting display panel | |
| CN110783367B (en) | Display panel | |
| JP7007268B2 (en) | Display panel and its manufacturing method, and display device | |
| US7420608B2 (en) | Display device with image sensing device | |
| US20100321640A1 (en) | Projection display chip | |
| US20220376028A1 (en) | Display substrate and display device | |
| KR20220164076A (en) | A colour iled display on silicon | |
| KR20060129449A (en) | Light-collecting illumination system | |
| CN1914929A (en) | Illumination system | |
| KR20090035562A (en) | Integrating light source module | |
| US20070111347A1 (en) | Surface emitting device, manufacturing method thereof and projection display device using the same | |
| KR20100052505A (en) | Imaging device for the projection of an image | |
| US8657475B2 (en) | Light source | |
| CN110767734A (en) | Display panel, display device and manufacturing method of display panel | |
| KR102499375B1 (en) | Partial light field display architecture | |
| CN113178466B (en) | Display device and electronic apparatus | |
| CN113224106B (en) | Display panel and display device | |
| CN115394253A (en) | Integrated optical structure with self-luminous display and image sensor co-layer mixed arrangement | |
| US9357188B2 (en) | Photography and projection apparatus and light emitting and sensing module | |
| CN115561958A (en) | Laminated optical engine structure integrating micro-projection display and camera optical module | |
| TW202242488A (en) | High density pixel arrays for auto-viewed 3d displays | |
| CN114678477A (en) | Display panel and display device | |
| CN212083821U (en) | Display panel and display device based on eyeball tracking technology | |
| CN111580270A (en) | Display panel based on eyeball tracking technology, preparation method thereof and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |