CN115377794A - BH laser and manufacturing method thereof - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 14
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- 238000001259 photo etching Methods 0.000 claims description 58
- 238000005530 etching Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 238000009616 inductively coupled plasma Methods 0.000 claims description 24
- 238000002161 passivation Methods 0.000 claims description 23
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 21
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
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- 238000004544 sputter deposition Methods 0.000 claims description 9
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- 238000010894 electron beam technology Methods 0.000 claims description 5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
- H01S5/2013—MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
Abstract
The invention provides a BH laser and a manufacturing method thereof, belonging to the technical field of laser manufacturing, wherein the BH laser comprises: the first epitaxial structure, the second epitaxial structure, the third epitaxial structure, the P-face electrode layer and the N-face electrode layer are arranged on the substrate; an AlGaInAs SCH layer is added on the epitaxial structure to replace the existing asymmetric waveguide structure, so that the far field divergence angle is reduced; by adopting InGaAsP as an active layer and an SCH waveguide structure, the limiting factor is reduced, and the coupling power is improved. The embedding adopts an MESA structure, the MESA is manufactured by inverse ICP and wet non-selective corrosion, and then the limit of current and light field is realized by PNP heterojunction embedding technology, the transverse diffusion of current is limited, the output light spot is nearly circular, the light beam quality of a chip is improved, the light output power and the coupling efficiency of devices are improved, and the packaging cost is reduced. By corroding InGaAs layers on the surfaces of two ends of the chip, the optical field limitation is reduced, the far field divergence angle is reduced, and the focusing effect is improved, so that the technical effects of improving the beam quality and the output power are achieved.
Description
Technical Field
The invention belongs to the technical field of laser manufacturing, and particularly relates to a BH laser and a manufacturing method thereof.
Background
At present, with the increasing demand of PON OLT for 1490nm high-power lasers, most of the market adopts AlGaInAs/Inp material RWG structure to select high power to meet the demand. And the RWG structure is used as a weak-refractive-index waveguide mechanism, effective optical field limitation and current limitation do not exist, and no BH structure has advantages in the aspects of threshold current, far-field characteristics and reliability. Especially, in some high-power requirements, the RWG structure cannot meet the requirements, and the BH structure is widely applied with high power, a nearly circular light spot and high coupling efficiency.
However, most 1490nm BH structures in the market have power of 8-10 mW, and the far field angle is about 30 degrees, so that the low-power requirement can be partially met, and the requirement of more than 5mW for terminal coupling can not be met.
Disclosure of Invention
In order to solve the problems that an RWG structure in the prior art has no effective optical field limitation and current limitation, and has weaker advantages than a BH structure in the aspects of threshold current, far field characteristics and reliability, the invention provides the BH laser and the manufacturing method thereof. The specific technical scheme is as follows:
a BH laser, the BH laser comprising: the device comprises a first epitaxial structure, a second epitaxial structure, a third epitaxial structure, a P-face electrode layer and an N-face electrode layer; the first epitaxial structure includes: an N-InP substrate, an N-InP buffer layer and an InGaAsP layer which are sequentially grown on the N-InP from bottom to top; the second epitaxial structure includes: an InP buffer layer, an InP layer, an N-AlGaInAs SCH layer, an MQW InGaAsP layer, a P-AlGaInAs SCH layer and a P-InP cap layer which are sequentially grown from bottom to top above the InGaAsP layer; the third epitaxial structure includes: P-InP layers simultaneously covering the N-InP substrate and two sides of the second epitaxial structure; an N-InP layer, a P-InP layer and an N-InP layer are grown on the P-InP layerA P-InGaAs layer; a groove is formed in the third epitaxial structure and is sunken towards the direction close to the N-InP substrate; siO grows on the P-InGaAs layer 2 Passivation layer, siO 2 A window is arranged on the passivation layer; siO 2 2 A P-surface electrode layer is arranged above the passivation layer; an N-face electrode layer is arranged below the N-InP substrate.
In addition, a BH laser in the above technical solutions provided by the present invention may also have the following additional technical features:
optionally, siO 2 The thickness of the passivation layer is 800-1000 nm.
In another aspect of the present application, a method for fabricating a BH laser is provided, where the method for fabricating a BH laser includes: growing an N-InP buffer layer and an InGaAsP layer on an N-InP substrate, and manufacturing an N-type grating through electron beam lithography and corrosion to form a first epitaxial structure; continuing to grow an InP buffer layer, an InP layer, an N-AlGaInAs SCH layer, an MQInGaAsP layer, a P-AlGaInAs SCH layer and a P-InP cap layer to form a second epitaxial structure; growing a layer of SiO by PECVD 2 After the layer is formed, coating a layer of photoresist, carrying out photoetching graph and photoetching, and carrying out etching by using ICP (inductively coupled plasma) in combination with a wet method to carry out corrosion to obtain an MESA platform; removal of SiO 2 Burying and growing a P-InP layer, an N-InP layer and a P-InP layer, and finally growing a P-InGaAs layer to form a third epitaxial structure; etching after a pattern window is manufactured on the third epitaxial structure through first photoetching; photoetching pattern double grooves on two sides of the MESA platform by second photoetching, corroding the double grooves, and growing a layer of SiO by PECVD 2 As a passivation layer; by third photolithography on SiO 2 Coating a layer of photoresist on the upper surface, photoetching a P window pattern on the intermediate stage, and removing SiO on the P window by etching 2 (ii) a Masking a layer of LOR and photoresist by fourth photoetching, photoetching a P electrode pattern, evaporating by electron beams, and stripping to obtain a P electrode layer; and making Pad through fifth photoetching, increasing the thickness of the electrode through electroplating, thinning the N-surface electrode, and manufacturing a TiPtAu electrode layer on the N surface through evaporation or sputtering.
In addition, the method for manufacturing a BH laser in the above technical solutions provided by the present invention may also have the following additional technical features:
optionally, a layer of SiO is grown by PECVD 2 After the layer is formed, coating a layer of photoresist, carrying out photoetching pattern and photoetching etching, and carrying out etching by using ICP (inductively coupled plasma) in combination with a wet method to obtain the MESA platform, wherein the method further comprises the following steps: growing a layer of SiO with the thickness of 150-300 nm by PECVD 2 And (3) a layer.
Optionally, a layer of SiO is grown by PECVD 2 After the layer is formed, a layer of photoresist is coated, photoetching patterns are carried out, photoetching etching is carried out, etching is carried out by using ICP (inductively coupled plasma) and etching is carried out by combining with a wet method to obtain the MESA platform, and the method further comprises the following steps: etching with ICP combined with wet Br 2 ：HBr：H 2 And O, corroding to obtain an MESA platform.
Optionally, after the pattern window is fabricated on the third epitaxial structure by the first photolithography, the etching further includes: coating photoresist for masking, and photoetching pattern windows with the length of 20-30 micrometers and the width of 16-24 micrometers at two ends of the cavity with the length of 250 micrometers.
Optionally, after the pattern window is fabricated on the third epitaxial structure by the first photolithography, the etching further includes: adopts the mixture ratio of H 2 SO 4 :H 2 O 2 :H 2 And (3) etching for 1 to 2 minutes by using an etching solution of O = 1.
Optionally, pattern double trenches are photoetched on two sides of the MESA platform through second photoetching, double trenches are corroded, and a layer of SiO grows by PECVD 2 The passivation layer also comprises: adopting the mixture ratio of Br 2 ：HBr：H 2 O =1 to 5:10 to 40: etching for 10-15 min with 100-200 etching solution to form double grooves.
Optionally, the fourth photolithography is performed to mask a layer of LOR and photoresist, a P electrode pattern is obtained by photolithography, and then the P electrode layer is obtained by electron beam evaporation and stripping, and the method further includes: the P electrode layer was obtained by lift-off by electron beam evaporation of TiPtAu =20nm/60nm/200 nm.
Optionally, making Pad by fifth photolithography, increasing the thickness of the electrode by electroplating, thinning the N-face electrode, and fabricating the TiPtAu electrode layer on the N-face by evaporation or sputtering further includes: the thickness of the electrode is increased to 1-2 micrometers through electroplating, the N surface is thinned to 100-120 micrometers, and a TiPtAu =20nm/60nm/200nm electrode layer is manufactured on the N surface through evaporation or sputtering.
Compared with the prior art, the BH laser and the manufacturing method thereof have the beneficial effects that:
the invention has smaller far field angle and outputs near-circular light spots, and improves the output power and the coupling power. An AlGaInAs SCH layer is added on the epitaxial structure to replace the existing asymmetric waveguide structure, so that the far field divergence angle is reduced; by adopting the InGaAsP as an active layer and an SCH waveguide structure, the limit factor is reduced, the far-field light spot is reduced, and the coupling power is improved. The embedding adopts an MESA structure, the MESA is manufactured by inverse ICP and wet non-selective corrosion, and then the limit of current and light field is realized by PNP heterojunction embedding technology, the transverse diffusion of current is limited, the output light spot is nearly circular, the light beam quality of a chip is improved, the light output power and the coupling efficiency of devices are improved, and the packaging cost is reduced. The InGaAs layers on the surfaces of the two ends of the chip are corroded, so that the optical field limitation is reduced, the far field divergence angle is reduced, and the focusing effect is improved, so that the technical effects of improving the light beam quality and the output power are achieved.
Drawings
Fig. 1 is a schematic diagram illustrating a method for fabricating a BH laser according to an embodiment of the present invention after growing an N-InP buffer layer and an InGaAsP layer;
fig. 2 is a schematic diagram of a BH laser manufacturing method according to an embodiment of the present invention after manufacturing an N-type grating;
fig. 3 is a schematic diagram illustrating a BH laser fabrication method according to an embodiment of the present invention after growing a second epitaxial structure;
FIG. 4 shows a method for fabricating a BH laser to grow SiO 2 Schematic diagram after layer;
FIG. 5 is a schematic diagram of a method for fabricating a BH laser according to an embodiment of the present invention after applying a photoresist for photolithography etching;
FIG. 6 is a schematic diagram of a method for fabricating a BH laser according to an embodiment of the present invention after etching to obtain a MESA stage;
FIG. 7 is a schematic diagram of a method of fabricating a BH laser after buried growth in accordance with an embodiment of the present invention;
FIG. 8 is a schematic diagram illustrating a method for fabricating a BH laser in accordance with an embodiment of the present invention for growing a third epitaxial structure;
FIG. 9 is a schematic diagram of a method for fabricating a BH laser device in accordance with an embodiment of the present invention after double trench etching;
FIG. 10 shows a PECVD process for forming a SiO layer in a BH laser device in accordance with an embodiment of the present invention 2 Schematic view after passivation layer;
FIG. 11 shows a method for fabricating a BH laser for removing SiO in a P window in accordance with an embodiment of the present invention 2 Schematic behind passivation layer;
FIG. 12 is a schematic diagram of a BH laser manufacturing method of an embodiment of the present invention after stripping to obtain a P electrode layer;
FIG. 13 is a schematic diagram of a BH laser manufacturing method after N-face thinning in accordance with an embodiment of the present invention;
fig. 14 is a schematic diagram illustrating a BH laser fabrication method according to an embodiment of the present invention after fabricating an N-plane electrode;
FIG. 15 is a graph of a near circular spot output by a BH laser in accordance with an embodiment of the present invention;
wherein, the correspondence between the reference numbers and the part names in fig. 1 to 14 is:
1. an N-InP substrate; 2. an N-InP buffer layer; 3. an InGaAsP layer; 4. an InP buffer layer; 5. an InP layer; 6. an N-AlGaInAs SCH layer; 7. a MQW InGaAsP layer; 8. a P-AlGaInAs SCH layer; 9. a P-InP cap layer; 10. SiO 2 2 A layer; 11. a first photoresist layer; 12. a P-InP layer; 13. an N-InP layer; 14. a P-InP layer; 15. a P-InGaAs layer; 16. a second photoresist layer; 17. SiO 2 2 A passivation layer; 18. and a P electrode layer.
Detailed Description
In the description of the present application, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, merely for convenience of description and simplification of the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral connections; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
Referring collectively to fig. 1, 3, 8, and 14, in accordance with an embodiment of the present application, a BH laser includes: the device comprises a first epitaxial structure, a second epitaxial structure, a third epitaxial structure, a P-face electrode layer and an N-face electrode layer; the first epitaxial structure includes: an N-InP substrate, an N-InP buffer layer and an InGaAsP layer which are sequentially grown on the N-InP from bottom to top; the second epitaxial structure includes: an InP buffer layer, an InP layer, an N-AlGaInAs SCH layer, an MQW InGaAsP layer, a P-AlGaInAs SCH layer and a P-InP cap layer which are sequentially grown above the InGaAsP layer from bottom to top; the third epitaxial structure includes: P-InP layers simultaneously covering the N-InP substrate and two sides of the second epitaxial structure; an N-InP layer is grown on the P-InP layer,A P-InP layer and a P-InGaAs layer; a groove is formed in the third epitaxial structure and is sunken towards the direction close to the N-InP substrate; siO grows on the P-InGaAs layer 2 Passivation layer, siO 2 A window is arranged on the passivation layer; siO 2 2 A P-surface electrode layer is arranged above the passivation layer; an N-face electrode layer is arranged below the N-InP substrate. And the InGaAsP is adopted as an active layer on the epitaxial structure, and the SCH waveguide structure reduces the restriction factor, reduces the far-field light spot and improves the coupling power. By adding the AlGaInAs SCH limiting layer on the second epitaxial structure, the asymmetric waveguide structure of the existing epitaxial structure is changed, the far-field divergence angle is compressed, a more approximately circular light spot is output, and the output power and the coupling power are improved.
SiO 2 The thickness of the passivation layer was 1000nm. By making SiO 2 The thickness of the passivation layer is 1000nm, parasitic capacitance can be reduced, and bandwidth can be improved.
Referring to fig. 1 to 14 in combination, in another aspect of the present embodiment, a method for fabricating a BH laser is provided, where the method for fabricating a BH laser includes: growing an N-InP buffer layer and an InGaAsP layer on an N-InP substrate, and manufacturing an N-type grating through electron beam lithography and corrosion to form a first epitaxial structure; continuing to grow an InP buffer layer, an InP layer, an N-AlGaInAs SCH layer, an MQInGaAsP layer, a P-AlGaInAs SCH layer and a P-InP cap layer to form a second epitaxial structure; growing a layer of SiO by PECVD 2 After the layer is formed, coating a layer of photoresist, carrying out photoetching graph and photoetching, and carrying out etching by using ICP (inductively coupled plasma) in combination with a wet method to carry out corrosion to obtain an MESA platform; removal of SiO 2 Burying and growing a P-InP layer, an N-InP layer and a P-InP layer, and finally growing a P-InGaAs layer to form a third epitaxial structure; etching after a pattern window is manufactured on the third epitaxial structure through first photoetching; photoetching pattern double grooves on two sides of the MESA platform by second photoetching, corroding the double grooves, and growing a layer of SiO by PECVD 2 As a passivation layer; by third photolithography on SiO 2 Coating a layer of photoresist on the upper surface, photoetching a P window pattern on the intermediate stage, and removing SiO on the P window by etching 2 (ii) a Masking a layer of LOR and photoresist by fourth photoetching, photoetching to form a P electrode pattern, evaporating by electron beam, and strippingObtaining a P electrode layer; and making Pad through fifth photoetching, increasing the thickness of the electrode through electroplating, thinning the N-surface electrode, and manufacturing a TiPtAu electrode layer on the N surface through evaporation or sputtering. The embedding adopts an MESA structure, the MESA is manufactured by inverse ICP and wet non-selective corrosion, and then the limit of current and optical field is realized by PNP heterojunction embedding technology, the transverse diffusion of the current is limited, the light beam quality of the chip is improved by better optical field limit, the output light spot is nearly circular, the optical output power and the coupling efficiency of the device are improved, and the packaging cost is reduced. The InGaAs layers on the surfaces of the two ends of the chip are corroded, so that the optical field limitation is reduced, and the far field divergence angle is reduced.
Furthermore, the end face of the MESA platform is a curved surface, so that the output light spot is closer to a circle, and the output power and the coupling power of the laser can be further improved.
And further, growing an N-InP buffer layer and an InGaAsP layer on the N-InP substrate through MOCVD to obtain a first epitaxial structure.
Growing a layer of SiO with a thickness of 200nm by PECVD 2 And coating a layer of photoresist after the etching, carrying out photoetching graph and photoetching, and carrying out etching by using ICP (inductively coupled plasma) in combination with a wet method to obtain the MESA platform. Growing a layer of SiO with a thickness of 200nm by PECVD 2 Layer, reducing epitaxial structure stress, ensuring SiO 2 The intensity of the layer is to form an MESA platform structure after re-corrosion, so that the output light spot is approximately circular, better light field limitation is formed, the light beam quality of a chip is improved, and the output power and the coupling power of the laser are improved.
Growing a layer of SiO by PECVD 2 Coating a layer of photoresist after the layer is formed, photoetching patterns and photoetching etching, and etching by using ICP (inductively coupled plasma) in combination with wet method Br 2 ：HBr：H 2 And etching the O to obtain the MESA platform.
And coating photoresist mask on the third epitaxial structure through first photoetching, and photoetching pattern windows with the length of 30 micrometers and the width of 20 micrometers at two ends of the cavity length of 250 micrometers.
After a pattern window is manufactured on the third epitaxial structure through first photoetching, the proportion is H 2 SO 4 :H 2 O 2 :H 2 O＝1:17, etching for 2 minutes by using the etching solution.
Photoetching pattern double grooves on two sides of the MESA platform by second photoetching, wherein the proportion is Br 2 ：HBr：H 2 O =1 to 5:10 to 40: etching for 10-15 min with 100-200 etching solution to form double trenches, and growing a layer of SiO by PECVD 2 As a passivation layer.
And masking a layer of LOR and photoresist by fourth photoetching, photoetching a P electrode pattern, evaporating TiPtAu =20nm/60nm/200nm by electron beams, and stripping to obtain a P electrode layer.
Pad is made through a fifth photoetching, the thickness of the electrode is increased to 2 micrometers through electroplating, the thickness of an N surface is reduced to 120 micrometers, and a TiPtAu =20nm/60nm/200nm electrode layer is manufactured on the N surface through evaporation or sputtering.
As an embodiment, an N-InP buffer layer and an InGaAsP layer are grown on an N-InP substrate, and an N-type grating is manufactured through electron beam lithography and corrosion to form a first epitaxial structure; continuing to grow an InP buffer layer, an InP layer, an N-AlGaInAs SCH layer, an MQInGaAsP layer, a P-AlGaInAs SCH layer and a P-InP cap layer to form a second epitaxial structure; growing a layer of SiO 200nm thick by PECVD 2 Coating a layer of photoresist after the layer is formed, carrying out photoetching pattern and photoetching etching, and carrying out etching by using ICP (inductively coupled plasma) in combination with wet method Br 2 ：HBr：H 2 O, corroding to obtain an MESA platform; removal of SiO 2 Burying and growing a P-InP layer, an N-InP layer and a P-InP layer, and finally growing a P-InGaAs layer to form a third epitaxial structure; manufacturing a photoresist mask on the third epitaxial structure by first photoetching, photoetching a pattern window with the length of 30 micrometers and the width of 20 micrometers at two ends of the cavity with the length of 250 micrometers, and corroding for 2 minutes by using a corrosion solution with the ratio of H2SO4 to H2O2 to H2O = 1; and photoetching pattern double grooves on two sides of the MESA platform by second photoetching, wherein the proportion is Br2: HBr: H2O =1:10: etching with 100 etching solution for 10 min to form double trenches, and growing a layer of SiO with thickness of 1000nm by PECVD 2 As a passivation layer; by third photolithography on SiO 2 Coating a layer of photoresist on the upper surface, photoetching a P window pattern on the intermediate stage, and removing SiO on the P window by etching 2 (ii) a Masking by a fourth photolithographyPhotoetching a P electrode pattern by using a layer LOR and photoresist, evaporating TiPtAu =20nm/60nm/200nm by using electron beams, and stripping to obtain a P electrode layer; pad is made through fifth photoetching, the thickness of the electrode is increased to 2 micrometers through electroplating, the thickness of an N surface is reduced to 120 micrometers, a TiPtAu =20nm/60nm/200nm electrode layer is made on the N surface through evaporation or sputtering, and a laser is made for testing. The following data were obtained:
as can be seen from the data in the table above, the threshold current is reduced to within 8mA from 10-15 mA of the RWG structure due to the current limitation of the BH structure. The output light power is improved to more than 10mW from 5-7 mW, and the oblique efficiency is improved to more than 0.5mW/mA from 0.3 mW/mA. The SCH waveguide structure reduces the limiting factor, so that the vertical light beam divergence angle is reduced, the light field limitation of the BH structure is improved, and the output light spot is high in near-circular coupling efficiency. The bandwidth reaches 10GHz, and is effectively improved through reasonable overall dimension and film selection.
As shown in fig. 15, it can be seen that when a nearly circular spot is detected from the BH laser output, the focusing effect is improved, and the beam quality is improved.
It is readily understood by a person skilled in the art that the advantageous ways described above can be freely combined, superimposed without conflict.
The present application is intended to cover various modifications, equivalent arrangements, and adaptations of the present application without departing from the spirit and scope of the present application. The foregoing is only a preferred embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present application, and these modifications and variations should also be considered as the protection scope of the present application.
Claims (10)
1. A BH laser, comprising: the first epitaxial structure, the second epitaxial structure, the third epitaxial structure, the P-face electrode layer and the N-face electrode layer are arranged on the substrate;
the first epitaxial structure includes: the N-InP buffer layer and the InGaAsP layer sequentially grow on the N-InP from bottom to top;
the second epitaxial structure includes: an InP buffer layer, an InP layer, an N-AlGaInAs SCH layer, an MQW InGaAsP layer, a P-AlGaInAs SCH layer and a P-InP cap layer which are sequentially grown from bottom to top above the InGaAsP layer;
the third epitaxial structure includes: P-InP layers simultaneously covering the N-InP substrate and two sides of the second epitaxial structure; an N-InP layer, a P-InP layer and a P-InGaAs layer grow above the P-InP layer;
a groove is formed in the third epitaxial structure and is sunken towards the direction close to the N-InP substrate;
SiO grows on the P-InGaAs layer 2 Passivation layer of said SiO 2 A window is arranged on the passivation layer;
the SiO 2 A P-surface electrode layer is arranged above the passivation layer;
and an N-face electrode layer is arranged below the N-InP substrate.
2. The BH laser of claim 1, wherein:
the SiO 2 The thickness of the passivation layer is 800-1000 nm.
3. A method for fabricating a BH laser, the method comprising:
growing an N-InP buffer layer and an InGaAsP layer on an N-InP substrate, and manufacturing an N-type grating through electron beam lithography and corrosion to form a first epitaxial structure;
continuing to grow an InP buffer layer, an InP layer, an N-AlGaInAs SCH layer, an MQInGaAsP layer, a P-AlGaInAs SCH layer and a P-InP cap layer to form a second epitaxial structure;
growing a layer of SiO by PECVD 2 After the layer is formed, coating a layer of photoresist, carrying out photoetching pattern and photoetching etching, and carrying out etching by using ICP (inductively coupled plasma) in combination with a wet method to obtain an MESA platform;
removal of SiO 2 Burying and growing a P-InP layer, an N-InP layer and a P-InP layer, and finally growing a P-InGaAs layer to form a third epitaxial structure;
etching after a pattern window is manufactured on the third epitaxial structure through first photoetching;
photoetching pattern double grooves on two sides of the MESA platform by second photoetching, corroding the double grooves, and growing a layer of SiO by PECVD 2 As a passivation layer;
by third photolithography on SiO 2 Coating a layer of photoresist on the upper surface, photoetching a P window pattern on the intermediate stage, and removing SiO on the P window by etching 2 ；
Masking a layer of LOR and photoresist by fourth photoetching, photoetching a P electrode pattern, evaporating by electron beams, and stripping to obtain a P electrode layer;
and making Pad through a fifth photoetching, increasing the thickness of the electrode through electroplating, thinning the N-surface electrode, and manufacturing a TiPtAu electrode layer on the N surface through evaporation or sputtering.
4. The method of claim 3, wherein the growing of the SiO layer is performed by PECVD 2 After the layer is formed, coating a layer of photoresist, carrying out photoetching pattern and photoetching etching, and carrying out etching by using ICP (inductively coupled plasma) in combination with a wet method to obtain the MESA platform, wherein the method further comprises the following steps:
growing a layer of SiO with the thickness of 150-300 nm by PECVD 2 And (3) a layer.
5. The method of claim 4, wherein said growing a layer of SiO by PECVD is performed 2 After the layer is formed, coating a layer of photoresist, carrying out photoetching pattern and photoetching etching, and carrying out etching by using ICP (inductively coupled plasma) in combination with a wet method to obtain the MESA platform, wherein the method further comprises the following steps:
etching with ICP combined with wet Br 2 ：HBr：H 2 And etching the O to obtain the MESA platform.
6. The method of claim 3, wherein etching after the patterning window is formed on the third epitaxial structure by the first photolithography further comprises:
coating photoresist mask, and photoetching pattern windows with the length of 20-30 micrometers and the width of 16-24 micrometers at two ends of the cavity length of 250 micrometers.
7. The method of claim 6, wherein etching after the patterning window is formed on the third epitaxial structure by the first photolithography further comprises: adopts the mixture ratio of H 2 SO 4 :H 2 O 2 :H 2 And O = 1.
8. The method of claim 3, wherein the second photolithography is used to pattern double trenches on both sides of the MESA, and then the double trenches are etched, and a layer of SiO is grown by PECVD 2 The passivation layer also comprises:
adopting the mixture ratio of Br 2 ：HBr：H 2 O =1 to 5:10 to 40: etching for 10-15 min with 100-200 etching solution to form double grooves.
9. The method of claim 3, wherein the masking a layer of LOR and photoresist by a fourth photolithography to form a P electrode pattern, and performing electron beam evaporation to obtain a P electrode layer by lift-off further comprises:
the P electrode layer was obtained by lift-off by electron beam evaporation of TiPtAu =20nm/60nm/200 nm.
10. The method of claim 3, wherein said making Pad by the fifth photolithography, increasing the thickness of the electrode by electroplating, thinning the N-side electrode, and making the TiPtAu electrode layer on the N-side by evaporation or sputtering further comprises:
the thickness of the electrode is increased to 1-2 microns through electroplating, the N surface is thinned to 100-120 microns, and a TiPtAu =20nm/60nm/200nm electrode layer is manufactured on the N surface through evaporation or sputtering.
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| CN103460527A (en) * | 2010-11-02 | 2013-12-18 | 奥尼奇普菲托尼克斯有限公司 | Vertically-coupled surface-etched grating DFB laser |
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| JPH09148670A (en) * | 1995-11-28 | 1997-06-06 | Hitachi Ltd | Semiconductor laser and its manufacture |
| JPH11261154A (en) * | 1998-03-11 | 1999-09-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-emitting element |
| US20100202485A1 (en) * | 2009-02-10 | 2010-08-12 | Nec Electronics Corporation | Semiconductor laser and method of manufacturing the same |
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Application publication date: 20221122 |