CN115373072A - C-axis preferred orientation zinc-magnesium oxide ridge waveguide and manufacturing method thereof - Google Patents

C-axis preferred orientation zinc-magnesium oxide ridge waveguide and manufacturing method thereof Download PDF

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CN115373072A
CN115373072A CN202110562784.7A CN202110562784A CN115373072A CN 115373072 A CN115373072 A CN 115373072A CN 202110562784 A CN202110562784 A CN 202110562784A CN 115373072 A CN115373072 A CN 115373072A
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etching
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preferred orientation
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孟磊
杨涛
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Institute of Semiconductors of CAS
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials

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Abstract

A c-axis preferred orientation zinc magnesium oxide ridge waveguide and a manufacturing method thereof are disclosed, the method comprises: preferred orientation of Zn in c-axis l‑x Mg x Forming a strip-shaped masking layer on the O film, wherein x is more than or equal to 0 and less than or equal to 0.3; and under the protection of the masking layer, adopting a dry etching technology to preferentially orient Zn to the c axis 1‑x Mg x And etching the O film to form a ridge waveguide structure. Zn prepared by the invention l‑x Mg x The O-ridge waveguide can be applied to passive and active devices such as nonlinear waveguides, light wave couplers, waveguide modulators, waveguide switches and waveguide lasers, and has wide application prospect in the fields of integrated optics, optical interconnection and the like.

Description

C-axis preferred orientation zinc-magnesium oxide ridge waveguide and manufacturing method thereof
Technical Field
The invention relates to the field of photoelectron, in particular to c-axis preferred orientation Zn 1-x Mg x O (x is more than or equal to 0 and less than or equal to 0.3) ridge waveguide and a manufacturing method thereof.
Background
Zn 1-x Mg x The O film has the characteristics of no toxicity, low raw material cost, tunable energy band structure and the like, and has important application in the aspects of transparent conductive films, thin film transistor electron transport layers, ultraviolet light emitting diode n-type layers, ultraviolet light detector n-type layers and the like. Recent research results show that: c-axis preferred orientation Zn 0.72 Mg 0.28 The O film has a structure similar to that of LiNbO 3 The second-order nonlinear polarizability is equivalent, and the second-order nonlinear polarizability has great application potential in the field of integrated optics such as nonlinear waveguides and electro-optic modulators.
The ridge waveguide limits transmitted light in two directions simultaneously, and is the basis of passive and active devices such as light wave couplers, waveguide modulators, waveguide switches and waveguide lasers. In order to obtain effective application in the field of integrated optics, zn is added 1-x Mg x Etching of an O film into a ridge waveguide structure with a micron-scale lateral width is a key technology which needs to be solved urgently. Zn with preferred orientation only for a-axis has been reported 1-x Mg x The etching method of the O film generally comprises a dry method and a wet method:
dry etching
Dry etching has the advantage of very good control of sidewall profile and good etch uniformity within a wafer, wafer and batch, but has the disadvantage that plasma causes damage to the surface of the film. For example, the university of regs, usa, j.zhu et al, adopted SiCl-based 4 Etching of metal-organic vapor phase epitaxy grown a-axis oriented Zn by Reactive Ion Etching (RIE) technique of gas 1- x Mg x O (x is more than or equal to 0 and less than or equal to 0.3) film.
For another example, lumenz corporation, U.S.A., J.Tresback et al, U.S.A., adopted BCl-based 3 And Cl 2 Etching a-axis oriented Zn grown by metal organic vapor phase epitaxy (MOCVD) by inductively coupled plasma enhanced reactive ion etching (ICP-RIE) technology of mixed gas 1- x Mg x O (x is more than or equal to 0 and less than or equal to 0.3) film.
(II) wet etching
The wet etching has the advantages of simple process and small damage to the surface of the thin film, and has the defect that the side wall profile is not easy to control. For example, chen et al, university of Florida, USA, uses a HCl/H based solution 2 O and H 3 PO 4 /H 2 Zn grown by O solution etching pulse laser deposition method 0.9 Mg 0.1 And (3) O film.
For another example, lumenz corporation, U.S. J.Tresback et al, U.S. uses a H-based catalyst 3 PO 4 /H 2 Etching alpha-axis oriented Zn grown by metal organic vapor phase epitaxy method by wet etching technology of O solution 1-x Mg x O (x is more than or equal to 0 and less than or equal to 0.3) film.
However, the above studies are limited toIn the preferred orientation of Zn on the etched a-axis 1-x Mg x The etching rate and the influence on the film components in the O film process do not relate to the manufacture of a side wall profile and a ridge waveguide structure. At present, c-axis preferred orientation Zn is not prepared at home and abroad 1-x Mg x O (x is more than or equal to 0 and less than or equal to 0.3) ridge waveguide etching technology.
Disclosure of Invention
In view of the above, the main object of the present invention is to provide a Zn with c-axis preferred orientation 1-x Mg x O-ridge waveguide and method of making the same, intended to solve at least partially at least one of the above mentioned technical problems.
In order to achieve the purpose, the technical scheme of the invention is as follows:
as one aspect of the present invention, there is provided a c-axis preferred orientation Zn 1-x Mg x The manufacturing method of the O-ridge waveguide comprises the following steps: preferred orientation of Zn in c-axis 1-x Mg x Forming a strip-shaped masking layer on the O film, wherein x is more than or equal to 0 and less than or equal to 0.3; and adopting a dry etching technology to preferentially orient Zn to the c axis under the protection of the masking layer 1-x Mg x And etching the O film to form a ridge waveguide structure.
As another aspect of the present invention, there is provided a c-axis preferred orientation Zn obtained by the above-mentioned production method 1-x Mg x An O-ridge waveguide.
As can be seen from the technical scheme, the c-axis preferred orientation Zn of the invention 1-x Mg x The O-ridge waveguide and the manufacturing method thereof have at least one or one part of the following beneficial effects:
the invention adopts c-axis preferred orientation Zn manufactured by dry etching technology 1-x Mg x The O (x is more than or equal to 0 and less than or equal to 0.3) ridge waveguide can be applied to passive and active devices such as a light wave coupler, a waveguide modulator, a waveguide switch, a waveguide laser and the like by utilizing the second-order nonlinear optical characteristic of the ridge waveguide and the limitation of the ridge waveguide on transmitted light, and has wide application prospect in the fields of integrated optics, optical interconnection and the like.
Drawings
FIG. 1 shows an embodiment of the present invention1 to 4 c-axis preferred orientation Zn 1-x Mg x O (x is more than or equal to 0 and less than or equal to 0.3) ridge waveguide manufacturing method;
FIG. 2 shows the ratio of Ar/(Ar + HBr) gas to Zn in ICP-RIE etching in example 1 of the present invention 0.72 Mg 0.28 The influence of the etching rate of the O film, the etching rate of the photoresist and the etching selection ratio;
FIG. 3 shows Zn etched by ICP-RIE with Ar/(Ar + HBr) =80% gas ratio in example 1 of the present invention 0.72 Mg 0.28 Cross-sectional SEM pictures of O thin film samples;
FIG. 4 shows Zn before and after Ar ion beam etching at a sample inclination angle of 45 degrees in example 2 of the present invention 0.72 Mg 0.28 Cross-sectional SEM pictures of the O thin film sample, wherein (a) is before etching and (b) is after etching;
FIG. 5 shows Zn after Ar ion beam etching at a sample inclination angle of 7 degrees in example 3 of the present invention 1-x Mg x SEM picture of O (x =0.11 or 0.28) thin film sample, wherein (a) is Zn 0.89 Mg 0.11 The cross section of the sample (b) is Zn 0.87 Mg 0.28 And (4) O sample.
FIG. 6 shows Zn after two-step Ar ion beam etching by successively adopting 45 DEG and 7 DEG sample inclination angles in example 4 of the present invention 1- x Mg x Cross-sectional SEM pictures of O (x =0.11 or 0.28) thin film samples, where (a) is Zn 0.89 Mg 0.11 Sample, (b) is Zn 0.72 Mg 0.28 And (4) O sample.
Detailed Description
The invention discloses a method for preferentially orienting a c axis to Zn by adopting a dry etching technology 1-x Mg x The O (x is more than or equal to 0 and less than or equal to 0.3) film is manufactured into a ridge waveguide with the transverse width of 1-2 microns, can be applied to a passive or active device based on a nonlinear waveguide, and has wide application prospect in the fields of integrated optics, optical interconnection and the like.
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Specifically, according to some embodiments of the present invention, there is providedC-axis preferred orientation Zn 1-x Mg x The manufacturing method of the O-ridge waveguide comprises the following steps of S1 and S2:
step S1: preferred orientation of Zn in c-axis 1-x Mg x Forming a strip-shaped masking layer on the O film, wherein x is more than or equal to 0 and less than or equal to 0.3; and
step S2: under the protection of the masking layer, adopting dry etching technology to preferentially orient Zn to the c axis 1-x Mg x And etching the O film to form a ridge waveguide structure.
In some embodiments, the c-axis preferred orientation Zn of step S1 1-x Mg x The thickness of the O thin film is 500 to 600nm, preferably 500nm. According to the planar waveguide mode theory, the thickness of 500nm is Zn 0.72 Mg 0.28 The O film (refractive index 1.87 at 1550nm wavelength) was used as the minimum thickness required for the waveguide core layer to transmit single-mode light. In addition, too large a thickness (> 600 nm) can lead to Zn 1- x Mg x The growth quality of the O thin film deteriorates to increase the transmission loss.
In some embodiments, the c-axis preferred orientation Zn 1-x Mg x The O film is formed on a thermal oxidation Si (100) substrate (SiO for short by adopting a radio frequency magnetron sputtering method 2 A Si substrate) and a thermal oxide layer having a thickness of 2000-3000nm. Wherein the composition x of Mg is controlled below 0.3, which is beneficial to maintaining the wurtzite crystal structure.
In some embodiments, for different dry etching techniques used in step S2, different methods and materials may be used to fabricate the masking layer in step S1; the thickness of the masking layer is determined by the etching depth and the etching selection ratio.
Specifically, the masking layer may be a photoresist layer prepared by a spin-coating method, and the dry etching technique is an inductively coupled plasma-enhanced reactive ion (hereinafter referred to as ICP-RIE) etching technique based on a HBr and Ar mixed gas, and the etching gas is beneficial to improving the slope of the side wall of the thin film. An etch selectivity of up to 0.2 and a sidewall slope of up to about 60 deg. may be achieved at this time, suitable for fabricating shallow ridge waveguide structures.
Alternatively, the masking layer may be plasma enhanced chemical deposition (to)Hereinafter abbreviated as PECVD) of the silicon oxide 2 And the dry etching technology is Ar ion beam etching technology. An etch selectivity of up to about 0.8 and a sidewall slope of up to approximately 90 deg. may be achieved at this time, suitable for fabricating deep ridge waveguide structures.
In some embodiments, when the masking layer is a photoresist layer prepared by a spin-coating method, the step S1 specifically includes:
using a photoetching plate and a photoresist to preferentially orient Zn in the c axis through a photoetching process 1-x Mg x And manufacturing a strip-shaped photoresist masking layer on the O film.
In some embodiments, the masking layer is SiO formed using PECVD 2 In the case of layers, step S1 specifically includes substeps S11 to S13:
a substep S11 of preferentially orienting Zn in the c-axis by plasma enhanced chemical deposition 1-x Mg x Depositing a layer of SiO on the O film 2 A layer;
substep S12 of using a reticle and a photoresist to etch the SiO film by a photolithography process 2 Forming a strip-shaped photoresist masking layer on the layer; and
substep S13, under the protection of the photoresist masking layer, adopting reactive ion etching technology to carry out SiO 2 Etching the layer to form strip-shaped SiO 2 A masking layer.
Alternatively, the above-mentioned photolithography process may include, for example, oxygen plasma surface treatment, adhesive evaporation, spin coating, pre-baking, uv lithography, film hardening, and oxygen plasma primer removal.
In some embodiments, before step S1, further comprising: preferentially orienting the c axis to Zn 1-x Mg x The O film is washed in acetone solvent, absolute alcohol solvent, ultrapure water, and then dried. Specifically, the cleaning time was 5 minutes each, and the drying operation sequentially included blow-drying with nitrogen and drying at 120 ℃.
In some embodiments, the process parameters of the ICP-RIE etching technique of step S2 include: the mixed gas of HBr and Ar (gas proportion is 20-80 percent) is introduced into the etching chamber, the flow range is 15-25sccm, the gas pressure range is 3-7mTorr, the ICP power range is 500-1000W, the radio frequency power range is 250-500W, and the direct current bias voltage range is 150-250V.
In some embodiments, the process parameters of the Ar ion beam etching process of step S2 include: introducing Ar gas into the etching cavity, wherein the flow range is 15-25sccm, the gas pressure range is 0.5-1.5Pa, the inclination angle range of the sample is 5-60 degrees, the rotating speed range of the sample is 5-10rpm, the beam voltage range is 100-500V, and the beam current range is 50-150 mA.
In some embodiments, when the Ar ion beam etching technique is adopted in step S2, step etching of c-axis preferred orientation Zn may be further adopted 1-x Mg x O film and gradually decreasing the tilt angle of the sample in step etching. The 'sample inclination angle' of the invention is also the preferred orientation Zn of Ar ion beam and c axis 1-x Mg x O angle of the substrate surface normal of the film sample.
For example, the c-axis preferred orientation Zn is divided into three steps 1-x Mg x When the O film is etched, the first step uses a 60 ° sample tilt angle, the second step uses a 45 ° sample tilt angle, and the third step uses a 7 ° sample tilt angle, but is not limited thereto.
In SiO 2 Under the protection of the masking layer, adopting Ar ion beams to etch the c-axis preferred orientation Zn step by step 1-x Mg x The O film can simultaneously realize the etching selection ratio of 0.99 at most, the side wall gradient is controllable in a large range, and SiO is favorably removed 2 And a masking layer.
According to some embodiments of the invention, there is also provided c-axis preferred orientation Zn obtained by the above manufacturing method 1-x Mg x An O-ridge waveguide having a lateral width of 1-2 microns.
The technical solution of the present invention will be described in detail below by referring to a plurality of specific examples. It should be noted that the following specific examples are only for illustration and are not intended to limit the invention.
Example 1:
FIG. 1 shows preferred orientation of c-axis Zn in example 1 of the present invention 1-x Mg x Flow of manufacturing method of O (x is more than or equal to 0 and less than or equal to 0.3) ridge waveguideAs shown in fig. 1, the manufacturing method of the present embodiment includes:
step A, cleaning Zn 1-x Mg x O (x is more than or equal to 0 and less than or equal to 0.3), film sample (film thickness is about 500 nm), zn 1-x Mg x The O film is formed on the SiO film by adopting a radio frequency magnetron sputtering method 2 and/Si substrate.
Step B, using a photoetching plate (Cr strip width and period are respectively about 1700nm and 100 mu m) and a certain company photoresist (model AZ 6130), performing oxygen plasma surface treatment, binder steaming, photoresist throwing, prebaking, ultraviolet photoetching, film hardening, oxygen plasma primer removing and the like, and removing the primer from the cleaned Zn in the step A 1-x Mg x And (x is more than or equal to 0 and less than or equal to 0.3) a periodically arranged strip-shaped photoresist masking layer (the thickness is about 1000nm, the transverse width is about 1700nm, and the period is about 100 mu m) is manufactured on the surface of the O film.
Step C, processing Zn by adopting ICP-RIE technology based on HBr and Ar mixed gas 1-x Mg x O (x is more than or equal to 0 and less than or equal to 0.3) shallow ridge waveguide structure. Zn was treated using the ICP-RIE equipment parameters listed in Table 1 1-x Mg x And (3) O film.
TABLE 1 ICP-RIE Equipment setup parameters
Figure BDA0003077425880000061
FIG. 2 is a graph showing the ratio of Ar/(Ar + HBr) gas (20%, 50%, and 80%) to Zn in ICP-RIE etching in example 1 of the present invention 0.72 Mg 0.28 The etching rate of the O film, the etching rate of the photoresist masking layer and the etching selection ratio. Zn with increasing Ar gas content 0.72 Mg 0.28 The etching rates of the O film and the photoresist mask gradually decrease, but the etching selectivity ratio increases. Zn when the Ar/(Ar + HBr) gas ratio is 80% 0.72 Mg 0.28 The etching rates of the O film and the photoresist masking layer are respectively 19.6nm/min and 102.8nm/min, and the etching selectivity reaches the maximum value (about 0.2).
FIG. 3 shows Zn etched by ICP-RIE with Ar/(Ar + HBr) =80% gas ratio in example 1 of the present invention 0.72 Mg 0.28 Of O film samplesCross-sectional SEM pictures. After etching, zn 0.72 Mg 0.28 The cross section of the O film presents a shallow ridge structure, and the slope of the ridge side wall is about 60 degrees. Root mean square roughness (σ) of ridge surface was measured by atomic force microscope rms ) About 1.8nm.
Example 2:
as shown in fig. 1, the manufacturing method of the present embodiment includes:
step A, cleaning Zn 1-x Mg x Sample of O (x =0.11 or 0.28) thin film (film thickness about 500 nm), zn 1-x Mg x The O film is formed on the SiO film by adopting a radio frequency magnetron sputtering method 2 and/Si substrate.
Step B, adopting a PECVD method to clean Zn in the step A 1-x Mg x Depositing a layer of SiO on the surface of O (x =0.11 or 0.28) film 2 Thin film (thickness about 1000 nm). Using a photoetching plate (Cr strip width and period are respectively 1700nm and 100 micrometers) and a certain company photoresist (model AZ 6130), and performing surface treatment by oxygen plasma, binder steaming, photoresist throwing, prebaking, ultraviolet photoetching, film hardening, primer removing by oxygen plasma and the like on SiO 2 /Zn 1-x Mg x A masking layer of periodically arranged strips of photoresist (thickness about 1000nm, lateral width about 1700nm, period about 100 μm) was fabricated on the surface of the O (x =0.11 or 0.28) sample. By reactive ion etching in Zn 1-x Mg x Production of periodic arrangement of stripe-shaped SiO on the surface of O (x =0.11 or 0.28) sample 2 A masking layer (thickness about 1000nm, lateral width about 1700nm, period about 100 μm).
Step C, adopting Ar ion beam etching technology to process Zn 1-x Mg x O (x =0.11 or 0.28) deep ridge waveguide structure. Zn was treated using the Ar ion beam etching apparatus parameters listed in Table 2 1-x Mg x And (3) O film.
TABLE 2 Ar ion Beam etching Equipment setup parameters
Inclination angle Sample rotation speed Gas (es) Air pressure Flow rate of flow Beam voltage Beam current Etching time
45° 9rpm Ar 1Pa 18sccm 400V 100mA 33 minutes
FIG. 4 shows Zn before and after Ar ion beam etching at a sample inclination angle of 45 degrees in example 2 of the present invention 0.72 Mg 0.28 Cross-sectional SEM pictures of O thin film (initial thickness about 100 nm) samples. After reactive ion etching, zn is added as shown in FIG. 4 (a) 0.72 Mg 0.28 SiO with the side wall gradient close to 90 DEG is formed on the surface of the O film 2 A masking layer. As shown in FIG. 4 (b), after Ar ion beam etching, it was not etched by SiO 2 Zn covered by a masking layer 0.72 Mg 0.28 The O film is completely etched away to form a stripe structure, and the etching rate is about 11.4nm/min. Meanwhile, the slope of the etched ridge-shaped side wall is close to 90 degrees. In addition, inZn 0.72 Mg 0.28 SiO over O-bar structures 2 The masking layer is partially etched away and its sidewall slope remains at 90 deg.. SiO 2 2 The etch rate of the masking layer was about 28.1nm/min and the etch selectivity was about 0.41. However, in Zn 0.72 Mg 0.28 Thermal oxidation of SiO under O film 2 The layer is also etched in Zn 0.72 Mg 0.28 A small-gradient ridge is formed under the O-ridge.
Example 3:
as shown in fig. 1, the manufacturing method of the present embodiment includes:
step A, cleaning Zn 1-x Mg x Sample of O (x =0.11 or 0.28) thin film (film thickness about 500 nm), zn 1-x Mg x The O film is formed on the SiO film by adopting a radio frequency magnetron sputtering method 2 and/Si substrate.
Step B, adopting a PECVD method to clean Zn in the step A 1-x Mg x Depositing a layer of SiO on the surface of O (x =0.11 or 0.28) film 2 Thin film (thickness about 1000 nm). Using a photoetching plate (Cr strip width and period are respectively 1700nm and 100 micrometers) and a certain company photoresist (model AZ 6130), and performing surface treatment by oxygen plasma, binder steaming, photoresist throwing, prebaking, ultraviolet photoetching, film hardening, primer removing by oxygen plasma and the like on SiO 2 /Zn 1-x Mg x A masking layer of periodically arranged strips of photoresist (thickness about 1000nm, lateral width about 1700nm, period about 100 μm) was fabricated on the surface of the O (x =0.11 or 0.28) sample. By reactive ion etching in Zn 1-x Mg x Making periodic arrangement of stripe-shaped SiO on the surface of O (x =0.11 or 0.28) sample 2 A masking layer (thickness of about 1000nm, lateral width of about 1700nm, period of about 100 μm).
Step C, adopting Ar ion beam etching technology to process Zn 1-x Mg x O (x =0.11 or 0.28) deep ridge waveguide structure. Zn was treated using the Ar ion beam etching equipment parameters listed in Table 3 1-x Mg x And (3) O film.
TABLE 3 Ar ion Beam etching Equipment setup parameters
Inclination angle Sample rotation speed Gas (es) Air pressure Flow rate of flow Beam voltage Beam current Etching time
7° 9rpm Ar 1Pa 18sccm 400V 100mA 33 minutes
FIG. 5 shows Zn after Ar ion beam etching at a sample inclination angle of 7 degrees in example 3 of the present invention 1-x Mg x Cross-sectional SEM pictures of O (x =0.11 or 0.28) (initial thickness about 500 nm) samples. As shown in FIG. 5 (a), after Ar ion beam etching, it is not etched by SiO 2 Zn covered by a masking layer 0.89 Mg 0.11 The O film is completely etched away to form a deep ridge structure, and the etching rate is about 18.4nm/min. Meanwhile, the slope of the strip-shaped side wall formed by etching is about 60 degrees.In addition, in Zn 0.89 Mg 0.11 SiO over O deep ridge structure 2 The masking layer is etched to form a triangle, the etching of the middle part is about 13.0nm/min, and the etching selectivity ratio is about 1.42. As shown in FIG. 5 (b), it is not coated with SiO 2 Zn covered by a masking layer 0.87 Mg 0.28 Most of the O film is etched away to form a deep ridge structure, and the etching rate is about 12.6nm/min. Meanwhile, the slope of the etched ridge-shaped side wall is close to 90 degrees. In addition, a ridge having a small slope as in fig. 4 (b) is not formed below the deep ridge having a sidewall slope close to 90 °. In addition, in Zn 0.87 Mg 0.28 SiO over O deep ridge structure 2 The masking layer is etched to form a triangle, the etching of the middle part is about 16.3nm/min, and the etching selectivity ratio is about 0.77. These results show that: (1) Zn 1-x Mg x The Mg content in the O film affects the Ar ion beam etch rate and sidewall slope. (2) Sample inclination angle influence Zn 1- x Mg x SiO over O-ridge structure 2 Masking layer and thermal oxidized SiO thereunder 2 The shape of the layer.
Example 4:
as shown in fig. 1, the manufacturing method of the present embodiment includes:
step A, cleaning Zn 1-x Mg x Sample of O (x =0.11 or 0.28) thin film (film thickness about 500 nm), zn 1-x Mg x The O film is formed on the SiO film by adopting a radio frequency magnetron sputtering method 2 and/Si substrate.
Step B, adopting a PECVD method to clean Zn in the step A 1-x Mg x A layer of SiO is deposited on the surface of the O (x =0.11 or 0.28) film 2 Thin film (thickness about 1000 nm). Using a photoetching plate (Cr strip width and period are respectively 1700nm and 100 micrometers) and a certain company photoresist (model AZ 6130), and performing surface treatment by oxygen plasma, binder steaming, photoresist throwing, prebaking, ultraviolet photoetching, film hardening, primer removing by oxygen plasma and the like on SiO 2 /Zn 1-x Mg x A masking layer of periodically arranged strips of photoresist (thickness about 1000nm, lateral width about 1700nm, period about 100 μm) was fabricated on the surface of the O (x =0.11 or 0.28) sample. By reactive ion etching in Zn 1-x Mg x Making periodic arrangement of stripe-shaped SiO on the surface of O (x =0.11 or 0.28) sample 2 A masking layer (thickness about 1000nm, lateral width about 1700nm, period about 100 μm).
Step C, adopting Ar ion beam etching technology to process Zn 1-x Mg x O (x =0.11 or 0.28) deep ridge waveguide structure. The process is divided into two steps. The first step uses a 45 sample tilt angle and the second step uses a 7 sample tilt angle. Zn was treated using the Ar ion beam etching apparatus parameters listed in Table 4 1-x Mg x And (3) O film.
TABLE 4 Ar ion Beam etching Equipment setup parameters
Figure BDA0003077425880000091
FIG. 6 shows Zn after two-step Ar ion beam etching in example 4 of the present invention 1-x Mg x Cross-sectional SEM pictures of O (x =0.11 or 0.28) (initial thickness about 500 nm) samples. After reactive ion etching, on SiO 2 A shallow ridge structure is formed under the masking layer, and the slope of the ridge side wall is close to 90 degrees. Zn 0.89 Mg 0.11 The etching rate (13.8 nm/min) of the O film is greater than that of Zn 0.72 Mg 0.28 Etching rate of O film (9.7 nm/min). In addition, in Zn 0.89 Mg 0.11 SiO over O-ridge structure 2 The masking layer is partially etched away, the upper two side corners are removed, the masking layer is in an arc-like shape, and the sidewall slope is still kept at 90 degrees. SiO 2 2 The etch rate of the masking layer is about 14nm/min. For Zn 0.89 Mg 0.11 O and Zn 0.72 Mg 0.28 The etch selectivity of the O film was about 0.99 and 0.69, respectively. However, in the region away from the ridge region, zn 1-x Mg x The etch rate of the O (x =0.11 or 0.28) film increased, resulting in a small sloped ridge formed below the shallow ridge where the sidewall slope was close to 90 °. These results show that: (1) Zn 1-x Mg x The Mg content in the O film affects the Ar ion beam etch rate. (2) Sample inclination angle influence Zn 1-x Mg x SiO over O-ridge structure 2 Masking layer and thermally oxidized Si thereunderO 2 The shape of the layer. These results reveal that: siO grown by PECVD method 2 As a masking layer, zn is etched by Ar ion beam of multi-step variable sample inclination angle 1-x Mg x O (x is more than or equal to 0 and less than or equal to 0.3), can simultaneously realize the etching selection ratio of about 0.99, the large-range controllability of the side wall gradient and the removal of SiO while maintaining the side wall gradient close to 90 DEG 2 And a masking layer.
C-axis preferred orientation Zn prepared by the invention 1-x Mg x The O (x is more than or equal to 0 and less than or equal to 0.3) ridge waveguide can be applied to passive and active devices such as nonlinear waveguides, light wave couplers, waveguide modulators, waveguide switches, waveguide lasers and the like, has wide application prospect in the fields of integrated optics, optical interconnection and the like, and has important promotion effect on the development of information technologies such as silicon-based optoelectronic integrated chips and the like.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present invention, and should not be construed as limiting the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. C-axis preferred orientation Zn 1-x Mg x The manufacturing method of the O-ridge waveguide comprises the following steps:
preferred orientation of Zn in c-axis 1-x Mg x Forming a strip-shaped masking layer on the O film, wherein x is more than or equal to 0 and less than or equal to 0.3; and
under the protection of the masking layer, adopting a dry etching technology to preferentially orient Zn to the c axis 1-x Mg x And etching the O film to form a ridge waveguide structure.
2. The method of claim 1, wherein the c-axis preferentially oriented Zn 1-x Mg x The thickness of the O thin film is 500 to 600nm, preferably 500nm.
3. The method according to claim 1, wherein the masking layer is a photoresist layer prepared by a spin coating method, and the dry etching technique is an inductively coupled plasma-enhanced reactive ion etching technique based on a mixed gas of HBr and Ar.
4. The method of claim 3, wherein the inductively coupled plasma enhanced reactive ion etching technique comprises: introducing a mixed gas of HBr and Ar into the etching cavity, wherein the ratio of Ar/(Ar + HBr) gas is 20-80%, the flow rate ranges from 15-25sccm, the gas pressure ranges from 3-7mTorr, the ICP power ranges from 500-1000W, the radio frequency power ranges from 250-500W, and the direct current bias voltage ranges from 150-250V.
5. The method of claim 1, wherein the masking layer is SiO formed by plasma enhanced chemical deposition 2 And the dry etching technology is Ar ion beam etching technology.
6. The method according to claim 5, wherein said Zn is preferentially oriented in the c-axis 1-x Mg x The forming of the strip-shaped masking layer on the O film comprises:
preferentially orienting Zn on the c axis by adopting a plasma enhanced chemical deposition method 1-x Mg x Depositing a layer of SiO on the O film 2 A layer;
using a photoetching plate and a photoresist to carry out photoetching process on the SiO 2 Forming a strip-shaped photoresist masking layer on the layer; and
under the protection of the photoresist masking layer, the SiO is etched by adopting a reactive ion etching technology 2 Etching the layer to form strip-shaped SiO 2 A masking layer.
7. The manufacturing method according to claim 5, wherein the process parameters of the Ar ion beam etching treatment comprise: introducing Ar gas into the etching cavity, wherein the flow range is 15-25sccm, the gas pressure range is 0.5-1.5Pa, the inclination angle range of the sample is 5-60 degrees, the rotating speed range of the sample is 5-10rpm, the beam voltage range is 100-500V, and the beam current range is 50-150 mA.
8. The method according to claim 5, wherein said c-axis is preferentially oriented Zn by dry etching 1-x Mg x The etching of the O film comprises the following steps:
etching the c-axis preferred orientation Zn step by adopting Ar ion beams 1-x Mg x And an O film, wherein the inclination angle of the sample is gradually reduced in the step etching.
9. The method of manufacturing according to claim 1, wherein:
the c-axis preferred orientation Zn 1-x Mg x The O film is formed on a thermal oxidation Si (100) substrate by adopting a radio frequency magnetron sputtering method; and/or
Preferred orientation of Zn in said c-axis 1-x Mg x Before forming the strip-shaped masking layer on the O film, the manufacturing method further comprises the following steps:
preferentially orienting the c axis to Zn 1-x Mg x The O film is washed in acetone solvent, absolute alcohol solvent, ultrapure water, and then dried.
10. C-axis preferred orientation Zn obtained by the production method of any one of claims 1 to 9 1-x Mg x An O-ridge waveguide.
CN202110562784.7A 2021-05-21 2021-05-21 C-axis preferred orientation zinc-magnesium oxide ridge waveguide and manufacturing method thereof Pending CN115373072A (en)

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