CN115356806A - Etching method capable of controlling inclination angle of side wall of lithium niobate waveguide - Google Patents

Etching method capable of controlling inclination angle of side wall of lithium niobate waveguide Download PDF

Info

Publication number
CN115356806A
CN115356806A CN202210926873.XA CN202210926873A CN115356806A CN 115356806 A CN115356806 A CN 115356806A CN 202210926873 A CN202210926873 A CN 202210926873A CN 115356806 A CN115356806 A CN 115356806A
Authority
CN
China
Prior art keywords
layer
etching
waveguide
sio
lithium niobate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210926873.XA
Other languages
Chinese (zh)
Inventor
欧欣
朱一帆
张加祥
陈阳
王成立
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Microsystem and Information Technology of CAS
Original Assignee
Shanghai Institute of Microsystem and Information Technology of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Microsystem and Information Technology of CAS filed Critical Shanghai Institute of Microsystem and Information Technology of CAS
Priority to CN202210926873.XA priority Critical patent/CN115356806A/en
Publication of CN115356806A publication Critical patent/CN115356806A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/1204—Lithium niobate (LiNbO3)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching

Abstract

The invention relates to an etching method capable of controlling the inclination angle of the side wall of a lithium niobate waveguide, which comprises the following steps: providing a pre-prepared LNOI sheet as a substrate; deposition of SiO on the surface of LNOI wafer 2 Layer of SiO as an etching waveguide layer 2 A hard mask; in SiO 2 Spin-coating a double-layer electron beam glue on the surface of the layer, and defining a waveguide pattern on the LNOI sheet; depositing a metal layer on the surface of the double-layer electron beam glue and the area exposed with the waveguide pattern, and transferring the waveguide pattern to the metal layer as etching SiO 2 A metal hard mask of the layer; using SF 6 And O 2 Mixed gas of (2) to SiO 2 Etching the layer and removing the remaining metal hard mask; etching the waveguide layer by using a mixed gas of chlorine-based gas and argon gas, and adjusting the proportion of the chlorine-based gas and the argon gas so as to control the inclination angle of the side wall of the lithium niobate waveguide; removing residual SiO 2 Hard mask and standard cleaning method using RCAAnd cleaning to obtain the final lithium niobate waveguide based on the LNOI.

Description

Etching method capable of controlling inclination angle of side wall of lithium niobate waveguide
Technical Field
The invention relates to the technical field of preparation of lithium niobate waveguides, in particular to an etching method capable of controlling the inclination angle of the side wall of a lithium niobate waveguide.
Background
The lithium niobate crystal is a multifunctional material with the performances of piezoelectricity, ferroelectricity, acoustics, pyroelectricity, nonlinear optics, photoelectricity and the like, and the silicon-based lithium niobate thin film heterostructure can provide material support for devices such as a radio frequency filter, a pyroelectricity detector, a surface acoustic wave filter, a high-speed electro-optical modulator and the like. The ion beam stripping technology can realize the heterogeneous integration of silicon substrate and lithium niobate isopiestic pressure substrate, can prepare submicron lithium niobate single crystal film, and then with SiO 2 the/Si substrates are bonded together to form a Lithium Niobate On Insulator (LNOI) thin film, making it possible to mass-produce high-speed electro-optic modulators compatible with CMOS processes. In order to realize the transmission and modulation of light on an LNOI chip, it is very important to etch the surface of a lithium niobate thin film into devices such as a waveguide, a micro-ring resonant cavity, a grating coupler and the like, and the side wall inclination angle of lithium niobate in the etching process is improved, so that the local area of the waveguide to the mode of the transmitted light can be effectively improved, and a method for preparing the lithium niobate grating with the high aspect ratio is provided.
However, the fabrication of lithium niobate waveguides with high bevel angles to the sidewalls remains an international challenge. In the existing preparation method, for processing the lithium niobate waveguide, wet etching or dry etching is generally used. In the wet etching, due to the influence of the crystal orientation of lithium niobate, the etching result shows strong anisotropy, which influences the transfer of the optical structure from the mask to the lithium niobate thin film, and the etching rate is slow. Whereas conventional dry etching uses fluorine-based gases (e.g., carbon tetrafluoride, CF) 4 Sulfur hexafluoride SF 6 Trifluoromethane CHF 3 Etc.) etching lithium niobate, which necessarily results in the formation of lithium fluoride (LiF), thereby impeding further etching of the lithium niobate cell. Moreover, the use of fluorine-based gases does not allow for the adjustment of the sidewall tilt angle of the etched waveguide. In the prior art, the chemical proportion of lithium niobate can be changed by utilizing a proton exchange mode to form a new compound so as to improve the etching angle of the side wallHowever, this method causes irreversible damage to the optical properties of the material, and cannot achieve high-speed electro-optical modulation.
As an electro-optical modulation device, the etching angle of the lithium niobate waveguide has a large influence on the performance of the device, so that a new etching scheme needs to be explored to etch a lithium niobate pattern with a steep side wall.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an etching method capable of controlling the inclination angle of the side wall of the lithium niobate waveguide, which can realize the control of the inclination angle of the side wall of the etched lithium niobate waveguide, obtain the lithium niobate waveguide with the high-steepness side wall, and simultaneously effectively avoid the influence of a byproduct LiF on etching.
The invention provides an etching method capable of controlling the inclination angle of the side wall of a lithium niobate waveguide, which comprises the following steps:
step S1, providing a pre-prepared LNOI sheet as a substrate, wherein the LNOI sheet sequentially comprises a substrate layer, an oxygen buried layer and a waveguide layer from bottom to top;
s2, depositing SiO on the surface of the LNOI sheet 2 Layer of SiO for etching the waveguide layer 2 A hard mask;
step S3, in the SiO 2 Spin-coating double-layer electron beam glue on the surface of the layer, and etching the shape of the double-layer electron beam glue on the LNOI sheet by using an electron beam lithography technology to be complementary with the waveguide pattern;
s4, forming the surface of the double-layer electron beam glue and the exposed SiO 2 Depositing a metal layer on the surface of the layer, removing the double-layer electron beam glue and the metal layer on the double-layer electron beam glue, and etching the SiO with the metal layer 2 A metal hard mask of the layer;
step S5, use SF 6 And O 2 Mixed gas of (2) to the SiO 2 Inductively coupled plasma reactive ion etching of the layer to transfer the waveguide pattern on the metal layer to the SiO 2 Layer, and remove the remaining metal hard mask;
s6, performing inductively coupled plasma reactive ion etching on the waveguide layer by using a mixed gas of chlorine-based gas and argon gas, and adjusting the proportion of the chlorine-based gas and the argon gas to control the side wall inclination angle of the lithium niobate waveguide;
step S7, removing residual SiO 2 And (4) hard masking, and cleaning by using an RCA standard cleaning method to obtain the final LNOI-based lithium niobate waveguide.
Further, siO is deposited in the step S2 2 The method of the layer is plasma enhanced chemical vapor deposition.
Further, the method for spin-coating the double-layer electron beam paste in step S3 includes: firstly, siO is formed 2 A layer of methyl methacrylate was spin coated on the surface of the layer, and then a layer of polymethyl methacrylate was spin coated on the surface of the methyl methacrylate.
Further, the method for depositing the metal layer in step S4 is a physical vapor deposition method.
Further, the proportion of the chlorine-based gas and the argon gas in the step S6 is controlled by an etcher.
Preferably, the ratio of the chlorine-based gas to the argon gas is 50.
Preferably, the etching rate of the waveguide layer in the step S6 is 33nm/min.
The invention realizes the regulation and control of the side wall inclination angle of the etched lithium niobate waveguide by regulating the dry etching parameters, and can obtain the lithium niobate waveguide with the high-steepness side wall. Meanwhile, the chlorine-based gas used in the invention can effectively avoid the influence of the byproduct LiF on etching. And, the invention can make the sidewall smoother through regulating the etch rate.
Drawings
Fig. 1 is a flowchart of an etching method capable of controlling the inclination angle of the sidewall of a lithium niobate waveguide according to the present invention.
Fig. 2 (a) -2 (f) are graphs showing the process of etching the lithium niobate material according to the etching method of fig. 1.
Fig. 3 is a scanning electron microscope image of an etching result obtained after the lithium niobate material is etched by using the etching method of fig. 1, wherein the chlorine gas is argon gas = 0.
Fig. 4 is a scanning electron microscope image of an etching result obtained after the lithium niobate material is etched by using the etching method of fig. 1, wherein the chlorine gas is argon =50 sccm.
Fig. 5 is a scanning electron microscope image of an etching result obtained after the lithium niobate material is etched by using the etching method of fig. 1, wherein the chlorine gas is argon gas = 30.
Detailed Description
The following description of the preferred embodiments of the present invention is provided in conjunction with the accompanying drawings and will be described in detail.
As shown in fig. 1, the etching method capable of controlling the inclination angle of the sidewall of the lithium niobate waveguide provided by the present invention comprises the following steps:
step S1, providing a pre-prepared LNOI sheet 1, and taking the LNOI sheet 1 as a substrate. As shown in fig. 2 (a), the LNOI wafer 1 includes, in order from bottom to top, a base layer 11, a buried oxide layer 12, and a waveguide layer 13. Wherein, the base layer 11 is made of Si and is used for a film carrier; the buried oxide layer 12 is made of SiO 2 The refractive index of the waveguide layer is 1.5, and the waveguide layer is used for realizing certain refractive index contrast with the waveguide layer 13 (the refractive index is 2.2) so that light is localized in the waveguide layer 13 with the larger refractive index; the waveguide layer 13 is made of Lithium Niobate (LN) and used for etching a waveguide-like photonic loop to transmit and control light.
Step S2, as shown in FIG. 2 (b), depositing a hard mask layer 2 with a certain thickness on the surface of the LNOI sheet 1, wherein the hard mask layer 2 is preferably SiO 2 Layer as SiO when etching the waveguide layer 13 2 A hard mask. SiO 2 2 The thickness of the layer depends on its etch resistance ratio to the waveguide layer 13 (i.e. etching of SiO during dry etching) 2 And LN) and the depth to which waveguide layer 13 needs to be etched. In this example, siO 2 The thickness of the layer is between 400nm and 1 μm, preferably 800nm. In addition, in the present embodiment, siO is deposited 2 The method of the layer is a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
Step S3, as shown in FIG. 2 (c), depositing SiO 2 The surface of layer 2 is spin-coated with a bilayer electron beam resist 3 and is applied to the LNOI wafer by Electron Beam Lithography (EBL)The double layer of e-beam glue is etched in shape complementary to the waveguide pattern at 1. The dual-layer electron beam adhesive comprises Methyl Methacrylate (MMA) and polymethyl methacrylate (PMMA), specifically, siO 2 The surface of the layer is spin coated with a layer of MMA 31, then a layer of PMMA32 is spin coated on the MMA surface.
Step S4, as shown in FIG. 2 (d), forming a layer of exposed SiO on the surface of PMMA and relative to the two-layer electron beam glue 2 Depositing a metal layer 4 with a certain thickness on the surface of the layer (i.e. the area of the waveguide pattern), and removing the double-layer electron beam glue and the metal layer thereon to transfer the waveguide pattern to the metal layer by a Lift-Off process, leaving the metal layer as an etched SiO 2 A metal hard mask of the layer.
In this embodiment, the metal layer is Cr, and its thickness depends on Cr and SiO 2 The etching resistance ratio of (A) is between 50nm and 300nm, preferably 100nm. In addition, the method for depositing the metal Cr is a physical vapor deposition method, and comprises thermal evaporation, electron beam evaporation, magnetron sputtering and the like. The Lift-Off process is characterized in that: the remaining PMMA and MMA are removed using a deglued solution (e.g. acetone) to strip away the metallic Cr outside the waveguide pattern.
Then, the inductively coupled plasma reactive ion etching (ICP-RIE) technology is used for SiO 2 And etching the layer and the lithium niobate, including:
step S5, as shown in FIG. 2 (e), using SF 6 And O 2 Mixed gas of (2) to SiO 2 Layer 2 was inductively coupled plasma reactive ion etched to transfer the waveguide pattern on the metallic Cr layer 4 to SiO 2 Layer 2 and the remaining metal hard mask is removed. SF 6 And O 2 The proportion of the metal hard mask can be selected according to the requirement, and the metal hard mask is removed by chromium etching solution mainly containing ammonium ceric nitrate and glacial acetic acid.
Step S6, as shown in fig. 2 (f), performing inductively coupled plasma reactive ion etching on the waveguide layer 13 using a mixed gas of chlorine-based gas and argon gas, and adjusting a ratio of the chlorine-based gas and the argon gas to control a sidewall inclination angle of the lithium niobate waveguide.
Chlorine radicalThe gas may be Cl 2 、BCl 3 Or a mixture of both, and in the present invention, the side wall inclination angle of the waveguide can be adjusted by changing the ratio of the chlorine-based gas and the argon gas. Specifically, the flow ratio of chlorine-based gas and argon gas is controlled by an etcher to control the sidewall inclination angle of the waveguide. Wherein the flow range of the argon gas is 0-50 sccm, and the flow range of the chlorine-based gas is 0-50 sccm. Controlling the ion source power and the bias power of the etching machine to be unchanged, and when the flow of the argon gas is 50sccm and the flow of the chlorine-based gas is 0sccm, as shown in fig. 3, the inclination angle of the side wall of the waveguide obtained by etching is approximately 60 degrees; when the flow rate of the chlorine-based gas is 50sccm and the flow rate of the argon gas is 0sccm, as shown in fig. 4, the inclination angle of the side wall of the waveguide obtained by etching is approximately 85 °; when the flow rate of the chlorine-based gas was 30sccm and the flow rate of argon gas was 20sccm, the inclination angle of the sidewall of the waveguide obtained by etching was approximately 74 °. In the present invention, with argon: the inclination angle of the side wall obtained by etching becomes smaller and inclined when the proportion of the chlorine-based gas is increased; with argon: the inclination angle of the side wall obtained by etching becomes larger and steeper due to the reduction of the proportion of the chlorine-based gas. Thus, when controlling the argon: chlorine-based gas is 0: at 50sccm, a lithium niobate waveguide with a high-steepness sidewall can be obtained.
Since the fast etch rate results in rough waveguide sidewalls, it is necessary to control the etch rate by controlling the ion source power and bias power in the etcher. In this embodiment, the rate of etching the waveguide layer 13 is 33nm/min.
It can also be found from the above three SEM images that by chlorine-based gas etching, a result is obtained in which the morphology is significantly better than by fluorine-based gas etching, avoiding the generation of LiF which easily hinders etching. The sidewall slope angle of the etched lithium niobate waveguide of the present invention may be greater than 80 deg., providing the possibility of fabricating high aspect ratio submicron structures. Also, the surface roughness measured by AFM was 2.87nm (Rg), with a very high smoothness.
Step S7, as shown in FIG. 2 (f), removing the remaining SiO 2 And (4) hard masking, and cleaning by using an RCA standard cleaning method to obtain the final LNOI-based lithium niobate waveguide.
SiO 2 The method for removing the hard mask comprises the following steps: removal was by 10% strength hydrofluoric acid solution or BOE.
To remove the inorganic particles remaining on the surface after etching, NH was used after etching 4 OH：H 2 O 2 ： H 2 O is 1:1:5 washing with mixed alkaline solution, heating in water bath at 85 deg.C, and washing for 15 min.
In summary, the etching method for controlling the inclination angle of the side wall of the lithium niobate waveguide provided by the invention uses the ICP-RIE technology and the etching scheme of the double-layer mask, and uses the metal Cr as the mask to etch the SiO 2 Then with the SiO finished by etching 2 The method is characterized in that a mask is made, mixed gas of chlorine-based gas and argon gas is used for etching LN, the inclination angle of the side wall of the waveguide is adjusted by changing the proportion of the components of the working gas, the inclination angle of the side wall of the waveguide is more than 80 degrees, the surface appearance with low roughness can be obtained, the possibility of manufacturing a submicron structure with a high length-width ratio is provided, and an etching scheme which is in accordance with a specific optical design structure is also provided.
The invention can realize the regulation and control of the side wall inclination angle of the etched lithium niobate waveguide only by regulating the dry etching parameters, and obtain the lithium niobate waveguide with the high-steepness side wall. Meanwhile, the chlorine-based gas can effectively avoid the influence of the byproduct LiF on etching, and the side wall is smoother, so that the device structure which is more in line with the design of a photonic device is prepared.
The above embodiments are merely preferred embodiments of the present invention, which are not intended to limit the scope of the present invention, and various changes may be made in the above embodiments of the present invention. All simple and equivalent changes and modifications made according to the claims and the content of the specification of the present application fall within the scope of the claims of the present patent application. The invention has not been described in detail in the conventional technical content.

Claims (7)

1. An etching method capable of controlling the inclination angle of the side wall of a lithium niobate waveguide is characterized by comprising the following steps:
step S1, providing a pre-prepared LNOI sheet as a substrate, wherein the LNOI sheet sequentially comprises a substrate layer, an oxygen buried layer and a waveguide layer from bottom to top;
s2, depositing SiO on the surface of the LNOI sheet 2 Layer of SiO for etching the waveguide layer 2 A hard mask;
step S3, in the SiO 2 Spin-coating double-layer electron beam glue on the surface of the layer, and etching the shape of the double-layer electron beam glue on the LNOI sheet by using an electron beam lithography technology to be complementary with the waveguide pattern;
s4, forming the surface of the double-layer electron beam glue and the exposed SiO 2 Depositing a metal layer on the surface of the layer, removing the double-layer electron beam glue and the metal layer thereon, and etching the SiO with the metal layer 2 A metal hard mask of the layer;
step S5, using SF 6 And O 2 Mixed gas of (2) to the SiO 2 Inductively coupled plasma reactive ion etching the layer to transfer the waveguide pattern on the metal layer to the SiO 2 Removing the residual metal hard mask;
s6, performing inductively coupled plasma reactive ion etching on the waveguide layer by using a mixed gas of chlorine-based gas and argon gas, and adjusting the proportion of the chlorine-based gas and the argon gas to control the side wall inclination angle of the lithium niobate waveguide;
step S7, removing residual SiO 2 And (4) hard masking, and cleaning by using an RCA standard cleaning method to obtain the final LNOI-based lithium niobate waveguide.
2. The etching method capable of controlling the inclination angle of the sidewall of the lithium niobate waveguide according to claim 1, wherein the deposition of SiO in the step S2 2 The method of the layer is plasma enhanced chemical vapor deposition.
3. The etching method capable of controlling the inclination angle of the side wall of the lithium niobate waveguide according to claim 1, wherein the method for spin-coating the double-layer electron beam glue in the step S3 comprises: firstly, siO is formed 2 Spin coating a layer of methyl methacrylate on the surface of the layer, and then coating a layer of methacrylic acid on the surface of the layerThe surface of the methyl methacrylate is spin-coated with a layer of polymethyl methacrylate.
4. The etching method capable of controlling the inclination angle of the sidewall of the lithium niobate waveguide according to claim 1, wherein the method for depositing the metal layer in the step S4 is a physical vapor deposition method.
5. The etching method capable of controlling the inclination angle of the sidewall of the lithium niobate waveguide according to claim 1, wherein the ratio of the chlorine-based gas to the argon gas in the step S6 is controlled by an etching machine.
6. The etching method capable of controlling the inclination angle of the sidewall of the lithium niobate waveguide according to claim 1, wherein the ratio of the chlorine-based gas to the argon gas is 50 to 0sccm.
7. The etching method capable of controlling the inclination angle of the sidewall of the lithium niobate waveguide according to claim 1, wherein the etching rate of the waveguide layer in the step S6 is 33nm/min.
CN202210926873.XA 2022-08-03 2022-08-03 Etching method capable of controlling inclination angle of side wall of lithium niobate waveguide Pending CN115356806A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210926873.XA CN115356806A (en) 2022-08-03 2022-08-03 Etching method capable of controlling inclination angle of side wall of lithium niobate waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210926873.XA CN115356806A (en) 2022-08-03 2022-08-03 Etching method capable of controlling inclination angle of side wall of lithium niobate waveguide

Publications (1)

Publication Number Publication Date
CN115356806A true CN115356806A (en) 2022-11-18

Family

ID=84001339

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210926873.XA Pending CN115356806A (en) 2022-08-03 2022-08-03 Etching method capable of controlling inclination angle of side wall of lithium niobate waveguide

Country Status (1)

Country Link
CN (1) CN115356806A (en)

Similar Documents

Publication Publication Date Title
JP2001272505A (en) Surface treating method
CN1729415A (en) Process for fabrication of optical waveguides
CN111505767B (en) Preparation method of lithium niobate photonic chip based on silicon oxide mask
CN113687466B (en) Lithium niobate thin film photon chip based on metal hard mask and processing method thereof
CN111129955A (en) Low-temperature plasma dry etching method and application thereof
US6902871B2 (en) Method for manufacturing polymer microstructures and polymer waveguides
CN115079447A (en) Method for preparing electrode on integrated chip
CN102304767A (en) Method for preparing lithium niobate surface pattern
CN115356806A (en) Etching method capable of controlling inclination angle of side wall of lithium niobate waveguide
CN115685598B (en) Waveguide structure with core-spun electro-optic material layer, preparation method and application
JP5743718B2 (en) Mold manufacturing method and optical element
JP5404227B2 (en) Optical element manufacturing method and optical element
JP4681644B2 (en) Optical waveguide fabrication method
CN111916330A (en) Method for deep etching of grating
KR100361097B1 (en) Fabricating method of optical waveguide using inductively coupled plasma etcher
JP6212006B2 (en) Optical waveguide fabrication method
JP2014038183A (en) Optical waveguide, and manufacturing method thereof
TWI830101B (en) Method for dry-etching lithium niobate
CN116931367B (en) Lithium niobate thin film ridge waveguide modulator and preparation method thereof
CN117950265A (en) Lithium niobate nano structure and preparation method and application thereof
CN114815025B (en) Preparation method of large-duty-ratio sub-wavelength period grating
Vojs et al. Optimization of SiON/SiOx structures fabrication process for optical waveguides
CN117865218A (en) Dry deep etching process for thin film lithium niobate
JP5028811B2 (en) Method for fabricating compound semiconductor optical device
CN115774302A (en) Preparation method and structure of lithium niobate device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination