CN115351020B - Self-cleaning method, system and device for semiconductor equipment - Google Patents
Self-cleaning method, system and device for semiconductor equipment Download PDFInfo
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- CN115351020B CN115351020B CN202210989156.1A CN202210989156A CN115351020B CN 115351020 B CN115351020 B CN 115351020B CN 202210989156 A CN202210989156 A CN 202210989156A CN 115351020 B CN115351020 B CN 115351020B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 138
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims abstract description 300
- 239000007789 gas Substances 0.000 claims abstract description 163
- 239000011261 inert gas Substances 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims abstract description 50
- 238000000576 coating method Methods 0.000 claims abstract description 50
- 230000003647 oxidation Effects 0.000 claims abstract description 43
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 43
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000010926 purge Methods 0.000 claims description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 26
- 229910052796 boron Inorganic materials 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 21
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 239000001307 helium Substances 0.000 claims description 13
- 229910052734 helium Inorganic materials 0.000 claims description 13
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229910052754 neon Inorganic materials 0.000 claims description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 239000000523 sample Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims 2
- 238000012423 maintenance Methods 0.000 abstract description 10
- 230000002035 prolonged effect Effects 0.000 abstract description 5
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 239000006227 byproduct Substances 0.000 description 18
- 238000001514 detection method Methods 0.000 description 5
- 229910052809 inorganic oxide Inorganic materials 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/093—Cleaning containers, e.g. tanks by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The application discloses a self-cleaning method, a self-cleaning system and a self-cleaning device for semiconductor equipment, wherein the method comprises the steps of heating a reaction chamber to a preset temperature; and carrying out self-cleaning on the reaction chamber reaching the preset temperature, wherein the self-cleaning comprises alternately introducing reducing gas and inert gas into the reaction chamber. According to the embodiment of the disclosure, the reducing gas and the inert gas are alternately introduced into the reaction chamber after reaching the preset temperature, so that the oxidation coating deposited on the surface of the reflecting plate in the reaction chamber can be effectively removed under the condition that the reaction chamber is kept closed, the maintenance period of the reaction chamber is effectively prolonged, the utilization rate of a machine is improved, meanwhile, the infrared thermometer can accurately receive the reflected light of the wafer due to the fact that the oxidation coating on the surface of the reflecting plate is removed, the accuracy of detecting the temperature of the wafer is improved, the temperature deviation of the reaction chamber is avoided, and the stability of the temperature in the reaction chamber is ensured.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to a self-cleaning method, a self-cleaning system and a self-cleaning device for semiconductor equipment.
Background
The rapid thermal annealing equipment detects the temperature of the wafer mainly through the emissivity of the wafer, wherein the reflecting plate of the reaction chamber should be kept clean during normal operation, and no other pollutants are attached, otherwise, the detection of the temperature of the wafer by the infrared thermometer is affected.
When the rapid thermal annealing equipment heats the wafer, certain elements (such as boron, phosphorus, arsenic and the like) in the wafer are sublimated due to higher temperature, the sublimated elements react with oxides in the chamber to generate inorganic oxides, and when the process of the reaction chamber is finished, the temperature of the reaction chamber is rapidly reduced, and at the moment, the generated inorganic oxides are condensed and deposited on the side wall of the reaction chamber and the reflecting plate of the reaction chamber, so that the reflecting plate is atomized, and when the infrared detection of the wafer is carried out, the emitted infrared light can scatter on the surface of the atomized reflecting plate in different directions, so that the infrared thermometer cannot accurately receive the reflected light of the wafer, and finally the detection of the temperature of the wafer is influenced.
Disclosure of Invention
The disclosure aims to provide a self-cleaning method, a self-cleaning system and a self-cleaning device for semiconductor equipment. In order to achieve the above object, the present disclosure provides the following technical solutions:
A method of self-cleaning a semiconductor device, the method comprising: heating the reaction chamber to a predetermined temperature; and carrying out self-cleaning on the reaction chamber reaching the preset temperature, wherein the self-cleaning comprises alternately introducing reducing gas and inert gas into the reaction chamber.
In a specific embodiment, the self-cleaning comprises cleaning an oxide coating within the reaction chamber;
the oxidation coating is an inorganic substance, wherein the inorganic substance comprises one or more elements of boron, phosphorus and/or arsenic.
In a specific embodiment, the reaction chamber is kept in a closed state during the self-cleaning process.
In a specific embodiment, the predetermined temperature range is 800 ℃ to 1100 ℃.
In a specific embodiment, the alternately introducing the reducing gas and the inert gas into the reaction chamber includes:
after the reaction chamber is heated to a preset temperature, introducing a reducing gas in a first preset time;
introducing inert gas in a second preset time to purge the reaction chamber;
The cleaning steps are alternately performed for N times, wherein N is a positive integer greater than or equal to 1 and less than or equal to 20.
In a specific embodiment, the time range of the first preset time is 5 s-120 s, and the time range of the second preset time is 5 s-120 s; the ratio range of the first preset time to the second preset time is 1:1 to 5:1.
In a specific embodiment, the reducing gas comprises a first reducing gas and a second reducing gas;
the reducing gas is a first reducing gas when the Nth cleaning step is carried out;
the reducing gas is a second reducing gas when the n+1th cleaning step is performed.
In a specific embodiment, the first reducing gas is one or more of ammonia, nitric oxide, and carbon monoxide;
The second reducing gas is hydrogen.
In a specific embodiment, the inert gas comprises one or more of nitrogen, argon, helium, and neon.
In a specific embodiment, the flow rate of the reducing gas ranges from 0.5SLM to 100SLM and the flow rate of the inert gas ranges from 0.5SLM to 100SLM.
A semiconductor device self-cleaning system, the system comprising, a preheating device for heating a reaction chamber to a predetermined temperature; and the cleaning device is used for alternately introducing reducing gas and inert gas into the reaction chamber after the preset temperature is reached so as to self-clean the reaction chamber.
In a specific embodiment, the reaction chamber is kept in a closed state while the self-cleaning system is in operation; the predetermined temperature range is 800-1100 ℃.
In a specific embodiment, the flow rates of the reducing gas and the inert gas are in the range of 0.5 SLM-100 SLM; the ratio of the time of introducing the reducing gas to the time of introducing the inert gas ranges from 1:1 to 5:1.
In a specific embodiment, the reducing gas comprises one or more of ammonia, hydrogen, carbon monoxide and nitric oxide;
the inert gas includes one or more of nitrogen, argon, helium, and neon.
A self-cleaning device of semiconductor equipment comprises a processor and a memory, wherein the self-cleaning device is used for realizing the self-cleaning method of the semiconductor equipment.
According to the embodiment of the disclosure, the reducing gas and the inert gas are alternately introduced into the reaction chamber after reaching the preset temperature, so that the oxidation coating deposited on the surface of the reflecting plate in the reaction chamber can be effectively removed under the condition that the reaction chamber is kept closed, the maintenance period of the chamber is effectively prolonged, the utilization rate of a machine is improved, meanwhile, the infrared thermometer can accurately receive the reflected light of the wafer due to the fact that the oxidation coating on the surface of the reflecting plate is removed, the accuracy of detecting the temperature of the wafer is improved, the temperature of the reaction chamber is prevented from shifting, and the stability of the temperature in the reaction chamber is ensured.
Additional features and advantages of the disclosure will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the disclosure. The objectives and other advantages of the disclosure may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
FIG. 1 is a flow chart of a self-cleaning method of a semiconductor device of the present disclosure;
FIG. 2 is a diagram of a self-cleaning apparatus of the semiconductor device of the present disclosure;
FIG. 3 is a schematic diagram of a self-cleaning process of a semiconductor device in an embodiment of the disclosure;
FIG. 4 is a schematic diagram of a semiconductor device oxidation coating affecting temperature detection in an embodiment of the present disclosure;
Fig. 5 is a schematic diagram of an oxide coating formation process of a semiconductor device in an embodiment of the disclosure.
Detailed Description
The following description of the technical solutions in the embodiments of the present disclosure will be made clearly and completely with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person of ordinary skill in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.
To solve the deficiencies of the prior art, the present disclosure discloses a self-cleaning method for semiconductor devices, as shown in fig. 1, the method comprises the following steps: maintaining the closed state of the chamber, and heating the reaction chamber to a preset temperature of 800-1100 ℃; and in the self-cleaning process, keeping the reaction chamber in a closed state, and self-cleaning the reaction chamber reaching the preset temperature, wherein the self-cleaning comprises alternately introducing reducing gas and inert gas into the reaction chamber to clean the oxidation coating in the reaction chamber.
In one embodiment of the disclosure, after a wafer is subjected to Rapid Thermal Processing (RTP), substances such as boron, phosphorus, arsenic and the like in the wafer sublimate from the interior of the wafer and enter the side wall of the reaction chamber and the reflecting plate, and after the substances encounter the oxide, the substances react to produce inorganic oxide and condense on the side wall of the reaction chamber and the reflecting plate to form an oxidation coating, wherein the oxidation coating is an inorganic substance, and the inorganic substance comprises one or more elements of boron, phosphorus and/or arsenic.
In one embodiment of the present disclosure, the oxidation coating within the reaction chamber comprises an oxidation coating on the inner wall of the reaction chamber or the reflective plate.
In a specific embodiment of the disclosure, after the reaction chamber heats a plurality of wafers, an oxidation coating is formed on the side wall of the reaction chamber and the reflecting plate, and after the rapid annealing operation is completed, the reaction chamber is kept in a closed state all the time on the premise that a baffle control plate is arranged in the reaction chamber, so that on one hand, heat generated in the rapid annealing operation process can be fully utilized in the self-cleaning process of the reaction chamber, so that the cost is saved, on the other hand, the time for heating the reaction chamber to a preset temperature, for example, 800-1100 ℃, can be saved, and the production efficiency is improved.
In one embodiment of the present disclosure, the alternately introducing a reducing gas and an inert gas into the reaction chamber includes: after the reaction chamber is heated to a preset temperature, introducing reducing gas for 0.5 SLM-100 SLM in a first preset time; introducing inert gas 0.5-100 SLM in a second preset time, and purging the reaction chamber; the cleaning steps are alternately performed for N times (N is a positive integer greater than or equal to 1 and less than or equal to 20) until the oxidation coating inside the reaction chamber is purged. The time range of the first preset time is 5 s-120 s, the time range of the second preset time is 5 s-120 s, and the ratio range of the first preset time to the second preset time is 1:1 to 5:1.
The reducing gas includes a first reducing gas and a second reducing gas; the reducing gas is a first reducing gas when the Nth cleaning step is carried out; the reducing gas is a second reducing gas when the n+1th cleaning step is performed.
In a specific embodiment of the present disclosure, the first reducing gas is different from the second reducing gas. The reducing gas is introduced into the reaction chamber and can chemically react with the oxidation coating, the first reducing gas comprises one or more of ammonia, carbon monoxide and nitric oxide, and the second reducing gas is hydrogen.
In one embodiment of the present disclosure, the introduction of an inert gas comprising one or more of nitrogen, argon, helium, and neon is capable of scavenging the products of the chemical reaction of the reducing gas with the oxidized coating. Accordingly, the disclosed method can effectively eliminate the oxide coating on the reflective plate.
In one embodiment of the present disclosure, after the temperature of the reaction chamber reaches a predetermined temperature, for example, 800 ℃ to 1100 ℃, the first step is purged with a first strong reducing gas and heated, the second step is purged with an inert gas and maintained at the temperature, the third step is purged with a second strong reducing gas and maintained at the temperature, and the fourth step is purged with an inert gas and maintained at the temperature. The self-cleaning process is repeated one or more times until the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is cleaned.
In one embodiment of the present disclosure, repeatedly introducing the reducing gas and/or the inert gas into the reaction chamber reaching the predetermined temperature a plurality of times includes the steps of,
Introducing a first reducing gas of 0.5 SLM-100 SLM into the reaction chamber reaching a preset temperature for 5 s-120 s to clean the reaction chamber; in this process, the first reducing gas reacts with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, and illustratively, the reducing gas NH 3 reacts with the diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, resulting in the formation of nitrogen, water vapor and elemental boron, which is reacted by:
2NH3+B2O3＝N2+3H2O+2B
After stopping introducing the first reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s, and exemplarily, purging the inside of the reaction chamber by using N 2, helium, argon and the like, and purging the byproducts generated by the reaction of the first reducing gas and the oxide in the reaction chamber completely to finish the self-cleaning of the first reaction chamber;
Introducing a second reducing gas of 0.5-100 SLM into the reaction chamber for 5-120 s to clean the reaction chamber after the first self-cleaning method is completed; in this process, the second reducing gas reacts with the oxide in the reaction chamber to remove the oxide in the reaction chamber, and illustratively, the reducing gas H 2 reacts with the diboron trioxide (B 2O3) in the reaction chamber to remove B 2O3 in the reaction chamber, generating water vapor and elemental boron, which is reacted by:
3H2+B2O3＝3H2O+2B
After stopping introducing the second reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s, and exemplarily selecting N 2, helium, argon and the like to purge the interior of the reaction chamber, and purging byproducts generated by the reaction of the second reducing gas in the reaction chamber and oxides in the reaction chamber to clean to complete the self-cleaning of the second reaction chamber;
The reaction chamber with the second self-cleaning is internally provided with a reaction chamber; in this process, the first reducing gas reacts with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, and illustratively, the reducing gas NH 3 reacts with the diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, resulting in the formation of nitrogen, water vapor and elemental boron, which is reacted by:
2NH3+B2O3＝N2+3H2O+2B
after stopping introducing the first reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s, and exemplarily selecting N 2, helium, argon and the like to purge the inside of the reaction chamber, so that a byproduct generated by the reaction between the first reducing gas in the reaction chamber and the oxide in the reaction chamber is purged completely, and the self-cleaning of the reaction chamber for the third time is completed;
Introducing a second reducing gas into the reaction chamber after finishing the third self-cleaning for 5-120 s to clean the reaction chamber; in this process, the second reducing gas reacts with the oxide in the reaction chamber to remove the oxide in the reaction chamber, and illustratively, the reducing gas H 2 reacts with the diboron trioxide (B 2O3) in the reaction chamber to remove B 2O3 in the reaction chamber, generating water vapor and elemental boron, which is reacted by:
3H2+B2O3＝3H2O+2B
after stopping introducing the second reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s, and exemplarily selecting N 2, helium, argon and the like to purge the interior of the reaction chamber, and completely purging byproducts generated by the reaction of the second reducing gas in the reaction chamber and oxides in the reaction chamber to complete the self-cleaning of the fourth reaction chamber;
As shown in fig. 3, the above cleaning steps are alternately performed N times, where N is a positive integer greater than or equal to 1 and less than or equal to 20; the reducing gas and the inert gas are alternately circulated for n+1 times and are introduced into the reaction chamber, wherein the reducing gas is first reducing gas when the Nth cleaning step is carried out; the reducing gas is a second reducing gas when the n+1th cleaning step is performed.
If the N-th reaction chamber is cleaned, the N+1th reaction chamber is not cleaned, namely the second reducing gas is not introduced to clean the reaction chamber, and the self-cleaning of the semiconductor device is completed if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is cleaned.
If the N-th reaction chamber is self-cleaned, if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is not completely cleaned, the N+1th reaction chamber is self-cleaned, namely, the second reducing gas is introduced to clean the reaction chamber.
And if the self-cleaning of the reaction chamber is completed for n+1 times, and if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is cleaned, the self-cleaning of the semiconductor device is completed.
If the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is not completely cleaned after the self-cleaning of the reaction chamber for n+1 times is completed, the reduction gas and the inert gas are continuously and alternately purged into the reaction chamber after the self-cleaning is completed until the oxidation coating in the reaction chamber is purged completely.
The problem of the oxidation coating of the reflecting plate is effectively solved by the self-cleaning mode of the reaction chamber, the reaction chamber is not required to be opened for maintenance, and the equipment maintenance frequency is reduced; meanwhile, the maintenance period of the reaction chamber is prolonged, the utilization rate of the machine is improved, and the production cost of the product is further reduced.
The application also discloses a self-cleaning system of the semiconductor equipment, as shown in fig. 2, which comprises a preheating device and a cleaning device, wherein the preheating device is used for heating the reaction chamber to a preset temperature; and the cleaning device is used for alternately introducing reducing gas and inert gas into the reaction chamber after the preset temperature is reached so as to self-clean the reaction chamber.
In one embodiment of the present disclosure, after the temperature of the reaction chamber reaches a predetermined temperature, for example, 800 ℃ to 1100 ℃, the preheating device maintains the reaction chamber in a closed state while the self-cleaning system is operated, and the reducing gas and the inert gas are alternately introduced into the reaction chamber containing the oxidation coating layer until the oxidation coating layer on the inner wall of the reaction chamber or the reflecting plate is cleaned.
In a specific embodiment of the disclosure, the flow rate of the reducing gas and the flow rate of the inert gas are both in a range of 0.5SLM to 100SLM, and the ratio of the time of introducing the reducing gas to the time of introducing the inert gas is in a range of 1:1 to 5:1. the reducing gas comprises one or more of ammonia, hydrogen, carbon monoxide and nitric oxide; the inert gas includes one or more of nitrogen, argon, helium, and neon.
The oxidation coating in the reaction chamber comprises an oxidation coating on the inner wall of the reaction chamber or the reflecting plate; the oxidation coating comprises an inorganic oxide, wherein the oxidation coating is an inorganic substance, wherein the inorganic substance comprises one or more elements of boron, phosphorus and/or arsenic.
In one embodiment of the present disclosure, alternately introducing one or more reducing gases and/or inert gases into the reaction chamber to a predetermined temperature includes,
A first reducing gas, which is continuously introduced into the reaction chamber of 0.5 SLM-100 SLM for 5 s-120 s, is used to react the oxides in the reaction chamber reaching a predetermined temperature to eliminate the oxides in the reaction chamber, and exemplary reducing gas NH 3 reacts with diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, generating nitrogen, water vapor and elemental boron, which reaction process is:
2NH3+B2O3＝N2+3H2O+2B
after stopping introducing the first reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s, and exemplarily selecting N 2, helium, argon and the like to purge byproducts after the first reducing gas in the reaction chamber reacts with oxides in the reaction chamber, so as to finish the self-cleaning of the first reaction chamber;
inside the reaction chamber where the first self-cleaning is completed, continuously introducing a second reducing gas of 0.5 SLM-100 SLM for 5 s-120 s to clean the reaction chamber, for reacting the oxide in the reaction chamber reaching a predetermined temperature to eliminate the oxide in the reaction chamber, and reacting the reducing gas H 2 with diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, thereby generating water vapor and elemental boron, wherein the reaction process is as follows:
3H2+B2O3＝3H2O+2B
after stopping introducing the second reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 seconds to purge the inside of the reaction chamber, and purging byproducts after the second reducing gas in the reaction chamber reacts with the oxide in the reaction chamber to complete the self-cleaning of the second reaction chamber;
The method comprises the steps of introducing a first reducing gas of 0.5 SLM-100 SLM into a reaction chamber with self-cleaning purging of a secondary reaction chamber for 5 s-120 s, cleaning the reaction chamber, reacting oxides in the reaction chamber to eliminate the oxides in the reaction chamber, and reacting reducing gas NH 3 with diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber to generate nitrogen, water vapor and boron simple substances, wherein the reaction process is as follows:
2NH3+B2O3＝N2+3H2O+2B
After stopping introducing the first reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s, and exemplarily selecting N 2, helium, argon and the like to purge byproducts after the first reducing gas in the reaction chamber reacts with oxides in the reaction chamber, so as to finish the self-cleaning of the reaction chamber for the third time;
Inside the reaction chamber with the third self-cleaning, continuously introducing a second reducing gas of 0.5-100 SLM for 5-120 s to clean the reaction chamber, wherein the second reducing gas is used for reacting the oxide in the reaction chamber reaching a preset temperature to eliminate the oxide in the reaction chamber, and the reducing gas H 2 is used for reacting with diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, so that water vapor and boron simple substance are generated, and the reaction process is as follows:
3H2+B2O3＝3H2O+2B
After stopping introducing the second reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 seconds to purge the inside of the reaction chamber, and purging byproducts after the second reducing gas in the reaction chamber reacts with the oxide in the reaction chamber; completing the self-cleaning of the reaction chamber for the fourth time;
according to the process of alternately and circularly introducing the reducing gas and the inert gas into the cleaning reaction chamber for n+1 times, wherein the reducing gas is a first reducing gas when the nth cleaning step is carried out; the reducing gas is a second reducing gas when the n+1th cleaning step is performed.
After the self-cleaning of the Nth reaction chamber is finished, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is clean, the self-cleaning of the (n+1) th reaction chamber is not performed, namely, the self-cleaning of the semiconductor equipment is finished without introducing a second reducing gas to clean the reaction chamber.
After the self-cleaning of the Nth reaction chamber is finished, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is not completely cleaned, the self-cleaning of the (n+1) th reaction chamber is continued, namely, the second reducing gas is introduced to clean the reaction chamber.
After the self-cleaning of the reaction chamber for n+1 times is completed, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is cleaned, the self-cleaning of the semiconductor device is completed.
After the self-cleaning of the reaction chamber for n+1 times is completed, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is not completely cleaned, the reduction gas and the inert gas are continuously and alternately purged into the reaction chamber after the self-cleaning is completed until the oxidation coating in the reaction chamber is purged completely.
In a specific embodiment of the disclosure, the self-cleaning cycle in which the reducing gas and/or the inert gas are alternately introduced into the reaction chamber is repeated 1 to 20 times for purging the oxidation coating inside the reaction chamber.
In a specific embodiment of the present disclosure, the first reducing gas is different from the second reducing gas. The reducing gas is introduced into the reaction chamber and can chemically react with the oxidation coating, and the reducing gas comprises one or more of ammonia, hydrogen, carbon monoxide and nitric oxide.
The application also discloses a self-cleaning device of the semiconductor equipment, which comprises a processor and a memory, and is used for executing the self-cleaning method of the semiconductor equipment.
The technical scheme of the present disclosure will be further described with reference to specific examples.
In one embodiment of the disclosure, fig. 4 shows a rapid thermal annealing apparatus used in the disclosure, a wafer is located above an edge Ring (edge Ring) inside a reaction chamber, a support cylinder (support cylinder) is connected below the edge Ring, a reflective plate is disposed below the support cylinder, and the support cylinder below the edge Ring and the reflective plate form a black box, which can accurately detect a temperature, because the temperature is detected by light transmitted through the wafer, if the wafer is supported by a thimble, light passes through the lower surface of the wafer, so that a temperature measurement result is inaccurate; when the thimble is put down, a black body is formed, so that the temperature measurement is accurate. Radiation light (emission light) transmitted through the wafer may enter the blackbody through the support drum. Referring to fig. 5, it can be seen that the Probe (Probe) of the pyrometer (Pyrometer) penetrates through the reflecting plate and goes deep into the blackbody, which can not only monitor the temperature of the wafer in the process of rapid thermal treatment in real time, but also monitor the temperature of the reflecting plate and the interior of the reaction chamber in real time in the process of self-cleaning of the equipment. The edge ring is supported by quartz support columns (Quartz support cylinder) on two sides below, and the reaction chamber is positioned below the reflecting plate. During self-cleaning, the wafer can be processed in the cavity, and the wafer can be cleaned while rotating under the drive of the suspension motor, so that the cleaning efficiency is higher, wherein the suspension motor comprises a stator and a magnetic levitation rotor.
In one embodiment of the disclosure, referring to fig. 4 and 5, after a wafer is subjected to Rapid Thermal Processing (RTP), substances such as boron, phosphorus, arsenic and the like in the wafer sublimate and enter a side wall (chamber wall) of a reaction chamber and a reflecting plate from the inside of the wafer, and after the substances encounter an oxide, the substances react to produce an inorganic oxide and condense on the side wall of the reaction chamber and the reflecting plate to form an oxide coating. When the wafer is transparent to radiation, radiation light (emission light) is scattered, so that the pyrometer cannot accurately receive the radiation light of the wafer, and the detection of the temperature of the wafer is seriously affected. According to the traditional cleaning mode, the reaction chamber is directly opened for wiping or purging so as to keep the surface of the reflecting plate free of oxide coating, and the mode has high equipment loss and low production efficiency.
In one embodiment of the disclosure, after the reaction chamber heats a plurality of wafers, an oxide coating is formed on the side wall of the reaction chamber and the reflecting plate of the reaction chamber, and after the rapid annealing operation is completed, the reaction chamber is kept in a closed state on the premise that a baffle control plate is arranged in the reaction chamber, and the reaction chamber is not opened all the time in the process. After the temperature of the reaction chamber is heated to 800-1100 ℃, NH 3 gas is continuously introduced into the reaction chamber reaching 800-1100 ℃ for 5-120 s to form 0.5 SLM-100 SLM; in this process, the reducing gas NH 3 reacts with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, and illustratively, the reducing gas NH 3 reacts with the diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, producing nitrogen, water vapor and elemental boron, which is reacted by:
2NH3+B2O3＝N2+3H2O+2B
After stopping introducing the reducing gas NH 3, continuously introducing N 2 0.5-100 SLM for 5-120 seconds to purge the reducing gas NH 3 in the reaction chamber and the byproduct generated by the reaction of the diboron trioxide (B 2O3) in the reaction chamber, wherein the byproduct comprises water vapor and boron simple substance, and the first cycle self-cleaning is completed; ;
Introducing reducing gas H 2 to 0.5SLM to 100SLM into the reaction chamber after the first cycle self-cleaning is completed for 5 to 120 seconds; in this process, the reducing gas H 2 reacts with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, and illustratively, the reducing gas H 2 reacts with the diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, generating water vapor and elemental boron, which is reacted by:
3H2+B2O3＝3H2O+2B
Stopping introducing the reducing gas H 2, continuously introducing the inert gas N 2 for 5-120 seconds to purge the reducing gas H 2 in the reaction chamber and the boron trioxide (B 2O3) in the reaction chamber to generate byproducts including water vapor and boron simple substance; completing the second cycle self-cleaning;
Continuously introducing reducing gas NH 3 gas 0.5 SLM-100 SLM into the reaction chamber with the second circulation purging completion for 5 s-120 s; in this process, the reducing gas NH 3 reacts with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, and illustratively, the reducing gas NH 3 reacts with the diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, producing nitrogen, water vapor and elemental boron, which is reacted by:
2NH3+B2O3＝N2+3H2O+2B
After stopping introducing the reducing gas NH 3, continuously introducing N 2 0.5-100 SLM for 5-120 seconds to purge the reducing gas NH 3 in the reaction chamber and the byproduct generated by the reaction of the diboron trioxide (B 2O3) in the reaction chamber, wherein the byproduct comprises water vapor and boron simple substance, and completing the third cycle self-cleaning;
After the third cycle self-cleaning reaction chamber is purged, continuously introducing reducing gas H 2 to 0.5SLM to 100SLM for 5 to 120 seconds; in this process, the reducing gas H 2 reacts with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, and illustratively, the reducing gas H 2 reacts with the diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, generating water vapor and elemental boron, which is reacted by:
3H2+B2O3＝3H2O+2B
stopping introducing the reducing gas H 2, continuously introducing the inert gas N 2 for 5-120 seconds to the reaction chamber, and purging the reducing gas H 2 in the reaction chamber and the by-products generated by the reaction of the boron trioxide (B 2O3) in the reaction chamber, wherein the by-products comprise water vapor and boron simple substance, so that the fourth cycle self-cleaning is completed.
According to the process of alternately and circularly introducing the reducing gas and the inert gas into the cleaning reaction chamber for a plurality of times, wherein the reducing gas is first reducing gas when the Nth cleaning step is carried out; the reducing gas is a second reducing gas when the n+1th cleaning step is performed.
Introducing a first reducing gas into the inside of the reaction chamber which completes the self-cleaning of the N-1 th reaction chamber after completion for 5s to 120s, wherein the first reducing gas is 0.5SLM to 100SLM; in this process, the first reducing gas reacts with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, and illustratively, the reducing gas NH 3 reacts with the diboron trioxide (B 2O3) in the reaction chamber to eliminate B 2O3 in the reaction chamber, resulting in the formation of nitrogen, water vapor and elemental boron, which is reacted by:
2NH3+B2O3＝N2+3H2O+2B
After stopping introducing the first reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s, and exemplarily selecting N 2, helium, argon and the like to purge the inside of the reaction chamber, so as to purge the byproducts generated by the reaction between the first reducing gas in the reaction chamber and the oxide in the reaction chamber, thereby completing the self-cleaning of the Nth reaction chamber.
After the self-cleaning of the Nth reaction chamber is finished, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is clean, the second reducing gas is not introduced to clean the reaction chamber, and the self-cleaning of the semiconductor device is finished.
After the Nth reaction chamber is self-cleaned, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is not completely cleaned, continuously purging the inside of the reaction chamber after the completion, and continuously introducing a second reducing gas of 0.5 SLM-100 SLM for 5 s-120 s to clean the reaction chamber; in this process, the second reducing gas reacts with the oxide in the reaction chamber to remove the oxide in the reaction chamber, and illustratively, the second reducing gas H 2 reacts with the diboron trioxide (B 2O3) in the reaction chamber to remove B 2O3 in the reaction chamber, generating water vapor and elemental boron, which is reacted by:
3H2+B2O3＝3H2O+2B
Stopping introducing the second reducing gas H 2 to 120 seconds, continuously introducing the 0.5SLM to 100SLM inert gas N 2 to purge the inside of the reaction chamber, and purging the byproducts generated by the reaction between the second reducing gas in the reaction chamber and the oxide in the reaction chamber, wherein the byproducts generated by the reaction between the second reducing gas H 2 and the diboron trioxide (B 2O3) in the reaction chamber comprise water vapor and boron simple substance, so that the self-cleaning of the (N+1st) reaction chamber is completed.
After the self-cleaning of the reaction chamber for n+1 times is completed, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is cleaned, the self-cleaning of the semiconductor device is completed.
After the self-cleaning of the reaction chamber for n+1 times is completed, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is not completely cleaned, the reduction gas and the inert gas are continuously and alternately purged into the reaction chamber after the self-cleaning is completed until the oxidation coating in the reaction chamber is purged completely.
The problem of the oxidation coating of the reflecting plate is effectively solved by the self-cleaning mode of the reaction chamber, the reaction chamber is not required to be opened for maintenance, and the equipment maintenance frequency is reduced; meanwhile, the PM (prevention maintain) maintenance period of the reaction chamber can be prolonged, the utilization rate of the machine is improved, the unstable temperature deviation caused by the coating of the reaction chamber is reduced, the reaction chamber maintains stable process temperature in one maintenance period, the maintenance period of the reaction chamber is prolonged, the utilization rate of the machine is improved, and the production cost of products is further reduced; the present disclosure may also maintain the temperature behavior of the reaction chamber stable, reducing product suffer (quality degradation) due to temperature excursions, thereby further improving product quality.
Finally, it should be noted that: the foregoing description of the preferred embodiments of the present disclosure is not intended to be limiting, but rather, although the present disclosure has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described, or equivalents may be substituted for elements thereof, and any modifications, equivalents, improvements or changes may be made without departing from the spirit and principles of the present disclosure.
Claims (14)
1. A method of self-cleaning a semiconductor device, the method comprising:
heating the reaction chamber to a preset temperature, wherein after the rapid annealing operation is finished, the reaction chamber is kept in a closed state all the time on the premise that a baffle control sheet is arranged in the reaction chamber;
self-cleaning the reaction chamber reaching the preset temperature, wherein the self-cleaning comprises alternately introducing reducing gas and inert gas into the reaction chamber;
the alternately introducing the reducing gas and the inert gas into the reaction chamber comprises: the reducing gas includes a first reducing gas and a second reducing gas;
After the reaction chamber is heated to a preset temperature, introducing a first reducing gas in a first preset time; introducing inert gas in a second preset time, and purging the reaction chamber to complete a first cleaning step;
introducing a second reducing gas in the first preset time; introducing inert gas in a second preset time, and purging the reaction chamber to complete a second cleaning step;
the cleaning steps are alternately performed for N times until the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is cleaned;
The wafer is placed above the edge ring in the reaction chamber, the supporting cylinder is connected below the edge ring, the reflecting plate is arranged below the supporting cylinder, after the thimble is put down, the supporting cylinder and the reflecting plate form a blackbody, radiant light penetrates through the wafer and passes through the supporting cylinder, a pyrometer probe passes through the reflecting plate and enters the blackbody, and the temperatures in the reflecting plate and the reaction chamber in self-cleaning of the real-time monitoring equipment are monitored;
In the self-cleaning of the equipment, the wafer is driven to rotate by a suspension motor.
2. A method of self-cleaning a semiconductor device according to claim 1, wherein the self-cleaning comprises cleaning an oxide coating within the reaction chamber;
the oxidation coating is an inorganic substance, wherein the inorganic substance comprises one or more elements of boron, phosphorus and/or arsenic.
3. A semiconductor device self-cleaning method as defined in claim 1, wherein,
During the self-cleaning process, the reaction chamber is kept in a closed state.
4. A method of self-cleaning a semiconductor device according to claim 3, wherein the predetermined temperature range is 800 ℃ to 1100 ℃.
5. A method of self-cleaning a semiconductor device according to claim 1, wherein N is an integer not less than 1 and not more than 20.
6. A semiconductor device self-cleaning method as defined in claim 1, wherein,
The time range of the first preset time is 5 s-120 s, and the time range of the second preset time is 5 s-120 s;
the ratio range of the first preset time to the second preset time is 1: 1-5: 1.
7. A semiconductor device self-cleaning method as defined in claim 1, wherein,
The first reducing gas is one or more of ammonia, nitric oxide and carbon monoxide;
The second reducing gas is hydrogen.
8. A method of self-cleaning a semiconductor device according to claim 1, wherein the inert gas comprises one or more of nitrogen, argon, helium and neon.
9. A semiconductor device self-cleaning method as defined in claim 1, wherein,
The flow range of the reducing gas is 0.5 SLM-100 SLM, and the gas flow range of the inert gas is 0.5 SLM-100 SLM.
10. A semiconductor device self-cleaning system, characterized in that the system comprises,
The preheating device is used for heating the reaction chamber to a preset temperature, wherein the reaction chamber is always kept in a closed state on the premise that a baffle control sheet is arranged in the reaction chamber after the rapid annealing operation is completed;
The cleaning device is used for alternately introducing reducing gas and inert gas into the reaction chamber after the preset temperature is reached so as to self-clean the reaction chamber; the wafer is placed above the edge ring in the reaction chamber, the supporting cylinder is connected below the edge ring, the reflecting plate is arranged below the supporting cylinder, after the thimble is put down, the supporting cylinder and the reflecting plate form a blackbody, radiant light penetrates through the wafer and passes through the supporting cylinder, a pyrometer probe passes through the reflecting plate and enters the blackbody, and the temperatures in the reflecting plate and the reaction chamber in self-cleaning of the real-time monitoring equipment are monitored; in the self-cleaning of the equipment, a hanging motor drives a wafer to rotate;
alternately introducing a reducing gas and an inert gas into the reaction chamber comprises: the reducing gas includes a first reducing gas and a second reducing gas;
After the reaction chamber is heated to a preset temperature, introducing a first reducing gas in a first preset time; introducing inert gas in a second preset time, and purging the reaction chamber to complete a first cleaning step;
introducing a second reducing gas in the first preset time; introducing inert gas in a second preset time, and purging the reaction chamber to complete a second cleaning step;
The cleaning steps are alternately performed for N times until the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is cleaned.
11. A semiconductor device self-cleaning system according to claim 10, wherein,
When the self-cleaning system is operated, the reaction chamber is kept in a closed state;
the preset temperature range is 800-1100 ℃.
12. A semiconductor device self-cleaning system according to claim 10, wherein,
The flow ranges of the reducing gas and the inert gas are 0.5 SLM-100 SLM;
The ratio of the time of introducing the reducing gas to the time of introducing the inert gas ranges from 1: 1-5: 1.
13. A semiconductor device self-cleaning system according to claim 10, wherein,
The reducing gas comprises one or more of ammonia, hydrogen, carbon monoxide and nitric oxide;
the inert gas includes one or more of nitrogen, argon, helium, and neon.
14. A semiconductor device self-cleaning apparatus, characterized in that the apparatus comprises a processor and a memory for implementing a semiconductor device self-cleaning method as claimed in any one of claims 1-9.
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