CN115351020A - Self-cleaning method, system and device for semiconductor equipment - Google Patents
Self-cleaning method, system and device for semiconductor equipment Download PDFInfo
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- CN115351020A CN115351020A CN202210989156.1A CN202210989156A CN115351020A CN 115351020 A CN115351020 A CN 115351020A CN 202210989156 A CN202210989156 A CN 202210989156A CN 115351020 A CN115351020 A CN 115351020A
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- 238000000034 method Methods 0.000 title claims abstract description 54
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- 229910052796 boron Inorganic materials 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 13
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 13
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/093—Cleaning containers, e.g. tanks by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
The application discloses a self-cleaning method, a system and a device of semiconductor equipment, wherein the method comprises the steps of heating a reaction chamber to a preset temperature; and self-cleaning the reaction chamber reaching the preset temperature, wherein the self-cleaning comprises alternately introducing a reducing gas and an inert gas into the reaction chamber. In the embodiment of the disclosure, the reaction chamber which reaches the preset temperature is alternately filled with the reducing gas and the inert gas, and under the condition of keeping the reaction chamber closed, the oxidation coating deposited on the surface of the reflecting plate in the reaction chamber can be effectively removed, so that the maintenance period of the reaction chamber is effectively prolonged, the utilization rate of the machine table is improved, and meanwhile, as the oxidation coating on the surface of the reflecting plate is removed, the infrared thermometer can accurately receive the reflected light of the wafer, the accuracy of wafer temperature detection is improved, the temperature of the reaction chamber is prevented from being deviated, and the stability of the temperature in the reaction chamber is ensured.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a method, a system, and an apparatus for self-cleaning a semiconductor device.
Background
The rapid thermal annealing equipment mainly detects the temperature of the wafer through the radiance of the wafer, wherein a reflecting plate of the reaction chamber is kept clean during normal operation, no other pollutants are attached, and otherwise, the detection of the infrared thermometer on the temperature of the wafer is influenced.
The rapid thermal annealing equipment is higher because of the temperature when heating the wafer, some elements (such as boron, phosphorus, arsenic, etc.) in the wafer can take place to sublimate, the element after the sublimation can take place to react with the oxide in the cavity and generate inorganic oxide, can cool down rapidly after the reaction chamber processing procedure finishes, at this moment, the inorganic oxide that generates will condense and deposit on reaction chamber lateral wall and reflecting plate thereof, make the reflecting plate take place the atomizing, when examining the wafer infrared, the infrared ray of transmission can take place the not scattering of equidirectional in the reflecting plate surface after the atomizing, lead to the unable accurate reverberation of accepting the wafer of infrared thermometer, finally influence the detection of wafer temperature.
Disclosure of Invention
The invention aims to provide a self-cleaning method, a self-cleaning system and a self-cleaning device for semiconductor equipment. In order to achieve the above purpose, the present disclosure provides the following technical solutions:
a method of self-cleaning a semiconductor device, the method comprising: heating the reaction chamber to a predetermined temperature; and self-cleaning the reaction chamber reaching the preset temperature, wherein the self-cleaning comprises alternately introducing a reducing gas and an inert gas into the reaction chamber.
In a particular embodiment, the self-cleaning includes cleaning an oxidation coating within the reaction chamber;
the oxidation coating is inorganic, wherein the inorganic comprises one or more elements of boron, phosphorus and/or arsenic.
In one embodiment, the reaction chamber is maintained in a closed state during the self-cleaning process.
In one embodiment, the predetermined temperature range is 800 ℃ to 1100 ℃.
In a specific embodiment, the alternately feeding of the reducing gas and the inert gas into the reaction chamber includes:
after the reaction chamber is heated to a preset temperature, introducing reducing gas within a first preset time;
introducing inert gas within a second preset time, and purging the reaction chamber;
the cleaning steps are alternately carried out for N times, wherein N is a positive integer which is more than or equal to 1 and less than or equal to 20.
In a specific embodiment, the first preset time is within a time range of 5s to 120s, and the second preset time is within a time range of 5s to 120s; the ratio range of the first preset time to the second preset time is 1:1 to 5:1.
in a particular embodiment, the reducing gas comprises a first reducing gas and a second reducing gas;
when the Nth cleaning step is carried out, the reducing gas is the first reducing gas;
when the cleaning step is performed for the (N + 1) th time, the reducing gas is the second reducing gas.
In a specific embodiment, the first reducing gas is one or more of ammonia, nitric oxide, and carbon monoxide;
the second reducing gas is hydrogen.
In a particular embodiment, the inert gas comprises one or more of nitrogen, argon, helium, and neon.
In a specific embodiment, the flow rate of the reducing gas ranges from 0.5SLM to 100SLM and the gas flow rate of the inert gas ranges from 0.5SLM to 100SLM.
A semiconductor device self-cleaning system, the system comprising, a preheating device for heating a reaction chamber to a predetermined temperature; and the cleaning device is used for alternately introducing reducing gas and inert gas into the reaction chamber after the preset temperature is reached so as to automatically clean the reaction chamber.
In a particular embodiment, the reaction chamber is maintained in a closed state while the self-cleaning system is in operation; the predetermined temperature range is 800-1100 ℃.
In a specific embodiment, the flow ranges of the reducing gas and the inert gas are both 0.5SLM to 100SLM; the ratio of the time of introducing the reducing gas to the time of introducing the inert gas is in the range of 1:1 to 5:1.
in a particular embodiment, the reducing gas comprises one or more of ammonia, hydrogen, carbon monoxide and nitric oxide;
the inert gas includes one or more of nitrogen, argon, helium, and neon.
The self-cleaning device for the semiconductor equipment comprises a processor and a memory and is used for realizing the self-cleaning method for the semiconductor equipment.
In the embodiment of the disclosure, the reaction chamber which reaches the preset temperature is alternately filled with the reducing gas and the inert gas, and under the condition of keeping the reaction chamber closed, the oxidation coating deposited on the surface of the reflecting plate in the reaction chamber can be effectively removed, so that the maintenance period of the chamber is effectively prolonged, the utilization rate of the machine table is improved, and meanwhile, as the oxidation coating on the surface of the reflecting plate is removed, the infrared thermometer can accurately receive the reflected light of the wafer, the accuracy of wafer temperature detection is improved, the temperature of the reaction chamber is prevented from being deviated, and the stability of the temperature in the reaction chamber is ensured.
Additional features and advantages of the disclosure will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the disclosure. The objectives and other advantages of the disclosure may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
FIG. 1 is a flow chart of a method for self-cleaning a semiconductor device according to the present disclosure;
FIG. 2 is a diagram of a self-cleaning apparatus for a semiconductor device according to the present disclosure;
FIG. 3 is a schematic diagram illustrating a self-cleaning process of a semiconductor device according to an embodiment of the disclosure;
FIG. 4 is a schematic illustration of an oxidation coating effect temperature detection of a semiconductor device in an embodiment of the present disclosure;
fig. 5 is a schematic diagram of a process for forming an oxide coating of a semiconductor device according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present disclosure will be described clearly and completely with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the embodiments described are only some embodiments of the present disclosure, rather than all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
To solve the deficiencies of the prior art, the present disclosure discloses a self-cleaning method of a semiconductor device, as shown in fig. 1, the method comprising the steps of: keeping the closing state of the chamber, and heating the reaction chamber to a preset temperature of 800-1100 ℃; and in the self-cleaning process, keeping the reaction chamber in a closed state, and self-cleaning the reaction chamber reaching the preset temperature, wherein the self-cleaning comprises alternately introducing reducing gas and inert gas into the reaction chamber to clean an oxidation coating in the reaction chamber.
In an embodiment of the present disclosure, after a Rapid Thermal Processing (RTP) process is performed on a wafer, substances such as boron, phosphorus, and arsenic in the wafer are sublimated from the inside of the wafer and enter the sidewall of the reaction chamber and the reflective plate, and these substances react with oxides to produce inorganic oxides and condense on the sidewall of the reaction chamber and the reflective plate, so as to form an oxide coating, where the oxide coating is an inorganic substance, and the inorganic substance includes one or more elements of boron, phosphorus, and/or arsenic.
In a specific embodiment of the present disclosure, the oxidation coating in the reaction chamber comprises an oxidation coating on an inner wall of the reaction chamber or a reflective plate.
In one embodiment of the present disclosure, after the reaction chamber heats a plurality of wafers, an oxidation coating is formed on the sidewall of the reaction chamber and the reflective plate, and after the rapid annealing operation is completed, the reaction chamber is always kept in a closed state on the premise that the control plate is provided in the reaction chamber, so that on one hand, heat generated in the rapid annealing operation process can be fully utilized in the reaction chamber self-cleaning process to save cost, and on the other hand, time for heating the reaction chamber to a predetermined temperature, for example, 800 ℃ to 1100 ℃, can be saved, thereby improving production efficiency.
In a specific embodiment of the present disclosure, the alternately feeding the reducing gas and the inert gas into the reaction chamber includes: after the reaction chamber is heated to a preset temperature, introducing reducing gas 0.5 SLM-100 SLM within a first preset time; introducing inert gas 0.5 SLM-100 SLM within a second preset time, and purging the reaction chamber; the cleaning steps are alternately carried out for N times (N is a positive integer which is more than or equal to 1 and less than or equal to 20) until the oxidation coating inside the reaction chamber is cleaned. The time range of the first preset time is 5 s-120 s, the time range of the second preset time is 5 s-120 s, and the proportion range of the first preset time to the second preset time is 1:1 to 5:1.
the reducing gas comprises a first reducing gas and a second reducing gas; when the Nth cleaning step is carried out, the reducing gas is the first reducing gas; when the (N + 1) th cleaning step is performed, the reducing gas is a second reducing gas.
In a specific embodiment of the present disclosure, the first reducing gas is different from the second reducing gas. And the reducing gas is introduced into the reaction chamber and can chemically react with the oxidation coating, the first reducing gas comprises one or more of ammonia gas, carbon monoxide and nitric oxide, and the second reducing gas is hydrogen.
In a specific embodiment of the present disclosure, the introduction of the inert gas can sweep away a product of a chemical reaction between the reducing gas and the oxide coating, and the inert gas includes one or more of nitrogen, argon, helium, and neon. Therefore, the disclosed method can effectively eliminate the oxidation coating on the reflecting plate.
In one embodiment of the present disclosure, after the temperature of the reaction chamber reaches a predetermined temperature, for example, 800 ℃ to 1100 ℃, a first strong reducing gas is introduced and heated, a second inert gas is introduced to purge and maintain the temperature, a third strong reducing gas is introduced to maintain the temperature, and a fourth inert gas is introduced to purge and maintain the temperature. The self-cleaning process is repeated one or more times until the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is cleaned.
In one embodiment of the present disclosure, repeatedly introducing the reducing gas and/or the inert gas into the reaction chamber reaching the predetermined temperature a plurality of times includes the steps of,
continuously introducing 0.5-100 SLM first reducing gas into the reaction chamber reaching the preset temperature for 5-120 s to clean the reaction chamber; during this process, a first reducing gas, illustratively NH, reacts with the oxides in the reaction chamber to remove the oxides from the reaction chamber 3 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Nitrogen, water vapor and boron simple substance are generated, and the reaction process is as follows:
2NH 3 +B 2 O 3 ＝N 2 +3H 2 O+2B
after the first reducing gas is stopped, continuously introducing inert gas of 0.5 SLM-100 SLM for 5 s-120 s, wherein N is selected as an example 2 Helium, argon and the like, purging the interior of the reaction chamber, and purging a byproduct generated by the reaction of the first reducing gas and the oxide in the reaction chamber to complete the self-cleaning of the first reaction chamber;
continuously introducing 0.5 SLM-100 SLM (selected from a group consisting of SLM) of second reducing gas into the reaction chamber which completes the first self-cleaning method for 5 s-120 s to clean the reaction chamber; in this process, a second reducing gas, illustratively H, reacts with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Water vapor and boron simple substance are generated, and the reaction process is as follows:
3H 2 +B 2 O 3 ＝3H 2 O+2B
after stopping the introduction of the second reducing gas, continuously introducing 0.5 SLM-100 SLM inert gas for 5 s-120 s, and exemplarily selectingWith N 2 Helium, argon and the like, purging the interior of the reaction chamber, and purging a byproduct generated by the reaction of a second reducing gas in the reaction chamber and an oxide in the reaction chamber to finish self-cleaning of the second reaction chamber;
the reaction chamber is internally provided with a second self-cleaning chamber; during this process, a first reducing gas, illustratively NH, reacts with the oxide in the reaction chamber to remove the oxide from the reaction chamber 3 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Nitrogen, water vapor and a boron simple substance are generated, and the reaction process is as follows:
2NH 3 +B 2 O 3 ＝N 2 +3H 2 O+2B
after the first reducing gas is stopped, 0.5 SLM-100 SLM inert gas is continuously introduced for 5 s-120 s, and N is selected for example 2 Helium, argon and the like, purging the interior of the reaction chamber, and purging a byproduct generated by the reaction of the first reducing gas in the reaction chamber and the oxide in the reaction chamber to finish the self-cleaning of the reaction chamber for the third time;
introducing a second reducing gas into the reaction chamber after the third self-cleaning for 5-120 s to clean the reaction chamber; in this process, a second reducing gas, illustratively H, reacts with the oxides in the reaction chamber to eliminate the oxides in the reaction chamber 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Water vapor and boron simple substance are generated, and the reaction process is as follows:
3H 2 +B 2 O 3 ＝3H 2 O+2B
after stopping introducing the second reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s, wherein N is selected as an exemplary choice 2 Helium, argon, etc. to purge the interior of the reaction chamber and to carry out the reaction of the second reducing gas in the reaction chamber with the oxide in the reaction chamberThe by-products generated by the reaction are swept to be clean, and the fourth self-cleaning of the reaction chamber is completed;
as shown in fig. 3, the cleaning steps are alternately performed N times, where N is a positive integer greater than or equal to 1 and less than or equal to 20; the process that the reducing gas and the inert gas are alternately circulated for N +1 times and are introduced into the reaction chamber is adopted, wherein the reducing gas is the first reducing gas when the cleaning step for the Nth time is carried out; when the (N + 1) th cleaning step is performed, the reducing gas is a second reducing gas.
If the Nth reaction chamber is self-cleaned and if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is clean, the (N + 1) th reaction chamber is not self-cleaned, i.e. the reaction chamber is not cleaned by introducing a second reducing gas, so that the self-cleaning of the semiconductor equipment is completed.
If the Nth reaction chamber is self-cleaned and if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is not completely cleaned, the (N + 1) th reaction chamber self-cleaning is continued, i.e. a second reducing gas is introduced to clean the reaction chamber.
If the self-cleaning of the reaction chamber for N +1 times is finished, and if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is clean, the self-cleaning of the semiconductor equipment is finished.
If the self-cleaning of the reaction chamber for N +1 times is completed and if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is not completely cleaned, the reduction gas and the inert gas are continuously and alternately blown into the completed reaction chamber until the oxidation coating in the reaction chamber is blown clean.
The problem of oxidation coatings of the reflecting plate is effectively solved in a self-cleaning mode of the reaction chamber, the reaction chamber does not need to be opened for maintenance, and the equipment maintenance frequency is reduced; meanwhile, the maintenance period of the reaction chamber is prolonged, the utilization rate of the machine table is increased, and the production cost of products is further reduced.
The application also discloses a self-cleaning system of the semiconductor equipment, which comprises a preheating device and a cleaning device, wherein the preheating device is used for heating the reaction chamber to a preset temperature; and the cleaning device is used for alternately introducing reducing gas and inert gas into the reaction chamber after the preset temperature is reached so as to automatically clean the reaction chamber.
In one embodiment of the present disclosure, after the temperature of the reaction chamber reaches a predetermined temperature, for example, 800 ℃ to 1100 ℃, the preheating device keeps the reaction chamber in a closed state while the self-cleaning system is in operation, and the reducing gas and the inert gas are alternately introduced into the reaction chamber containing the oxidation coating until the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is cleaned.
In a specific embodiment of the present disclosure, the flow ranges of the reducing gas and the inert gas are both 0.5SLM to 100SLM, and the ratio of the time of introducing the reducing gas to the time of introducing the inert gas is in a range of 1:1 to 5:1. the reducing gas comprises one or more of ammonia, hydrogen, carbon monoxide and nitric oxide; the inert gas includes one or more of nitrogen, argon, helium, and neon.
The oxidation coating in the reaction chamber comprises an oxidation coating on the inner wall of the reaction chamber or the reflecting plate; the oxide coating comprises an inorganic oxide, wherein the oxide coating is inorganic, wherein the inorganic comprises one or more elements of boron, phosphorus and/or arsenic.
In one embodiment of the present disclosure, alternately passing one or more reducing gases and/or inert gases into the reaction chamber to reach a predetermined temperature comprises,
cleaning the reaction chamber with a first reducing gas continuously flowing into the reaction chamber for 5-120 s and 0.5-100 SLM for reacting the oxide in the reaction chamber reaching a predetermined temperature to remove the oxide in the reaction chamber, for example, NH 3 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Nitrogen, water vapor and boron simple substance are generated, and the reaction process is as follows:
2NH 3 +B 2 O 3 ＝N 2 +3H 2 O+2B
stopping deviceAfter the first reducing gas is introduced, 0.5 SLM-100 SLM inert gas is continuously introduced for 5 s-120 s, and N is selected as an example 2 Helium, argon and the like, and is used for sweeping the byproducts generated after the reaction of the first reducing gas in the reaction chamber and the oxides in the reaction chamber to be clean so as to finish the self-cleaning of the first reaction chamber;
and introducing a second reducing gas of 0.5 SLM-100 SLM for 5 s-120 s into the reaction chamber which completes the first self-cleaning for cleaning the reaction chamber, wherein the second reducing gas is used for reacting the oxide in the reaction chamber reaching a preset temperature to eliminate the oxide in the reaction chamber, and the reducing gas H is used for example 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Water vapor and boron simple substance are generated, and the reaction process is as follows:
3H 2 +B 2 O 3 ＝3H 2 O+2B
after stopping introducing the second reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s to purge the interior of the reaction chamber, so as to completely purge the second reducing gas in the reaction chamber and byproducts generated after the reaction of the second reducing gas and the oxides in the reaction chamber, thereby completing self-cleaning of the second reaction chamber;
and continuously introducing 0.5 SLM-100 SLM (selected from a plurality of SLM) first reducing gas for 5 s-120 s into the reaction chamber which completes the self-cleaning purging of the secondary reaction chamber, and cleaning the reaction chamber for reacting the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, wherein the reducing gas is NH (ammonia) for example 3 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Nitrogen, water vapor and a boron simple substance are generated, and the reaction process is as follows:
2NH 3 +B 2 O 3 ＝N 2 +3H 2 O+2B
after the first reducing gas is stopped, continuously introducing inert gas of 0.5 SLM-100 SLM for 5 s-120 s, wherein N is selected as an example 2 Helium, argon, etc. for mixing the first reducing gas inside the reaction chamber with oxygen in the reaction chamberThe by-products are purged after the reaction of the compounds, and the third self-cleaning of the reaction chamber is completed;
and introducing a second reducing gas of 0.5 SLM-100 SLM for 5 s-120 s into the reaction chamber which completes the third self-cleaning for cleaning the reaction chamber, wherein the second reducing gas is used for reacting the oxide in the reaction chamber reaching the preset temperature to eliminate the oxide in the reaction chamber, and the reducing gas H is used for eliminating the oxide in the reaction chamber 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Water vapor and boron simple substance are generated, and the reaction process is as follows:
3H 2 +B 2 O 3 ＝3H 2 O+2B
after stopping introducing the second reducing gas, continuously introducing 0.5-100 SLM inert gas for 5-120 s to purge the interior of the reaction chamber, and purging by-products generated after the second reducing gas in the reaction chamber reacts with the oxide in the reaction chamber; completing the fourth self-cleaning of the reaction chamber;
the process of introducing the reducing gas and the inert gas into the cleaning reaction chamber for N +1 times in an interactive and circulating manner is carried out, wherein the reducing gas is the first reducing gas when the cleaning step for the Nth time is carried out; when the cleaning step is performed for the (N + 1) th time, the reducing gas is the second reducing gas.
After the Nth self-cleaning of the reaction chamber is finished, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is clean, the (N + 1) th self-cleaning of the reaction chamber is not carried out, namely, a second reducing gas is not introduced to clean the reaction chamber, so that the self-cleaning of the semiconductor equipment is finished.
And after the Nth self-cleaning of the reaction chamber is finished, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is not completely cleaned, continuously carrying out the (N + 1) th self-cleaning of the reaction chamber, namely introducing a second reducing gas to clean the reaction chamber.
And after the self-cleaning of the reaction chamber for N +1 times is finished, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is clean, the self-cleaning of the semiconductor equipment is finished.
After the N +1 times of self-cleaning of the reaction chamber is completed, if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is not completely cleaned, the reduction gas and the inert gas are continuously and alternately blown to the inside of the completed reaction chamber until the oxidation coating in the reaction chamber is blown clean.
In one embodiment of the present disclosure, the self-cleaning cycle of alternately feeding the reducing gas and/or the inert gas into the reaction chamber is repeated for 1 to 20 times for purging the oxidation coating inside the reaction chamber.
In a specific embodiment of the present disclosure, the first reducing gas is different from the second reducing gas. And the reducing gas is introduced into the reaction chamber and can chemically react with the oxidation coating, and the reducing gas comprises one or more of ammonia, hydrogen, carbon monoxide and nitric oxide.
The application also discloses a semiconductor equipment self-cleaning device which comprises a processor and a memory and is used for executing the semiconductor equipment self-cleaning method.
The technical scheme of the disclosure is further explained by combining specific examples.
In an embodiment of the present disclosure, fig. 4 illustrates a rapid thermal annealing apparatus used in the present disclosure, in which during rapid thermal processing of a wafer, the wafer is located above an edge Ring (edge Ring) inside a reaction chamber, a support cylinder (support cylinder) is connected below the edge Ring, a reflector (reflector plate) is disposed below the support cylinder, and the support cylinder and the reflector plate below the edge Ring form a black body (black box), which can accurately detect a temperature because the temperature is detected by light transmitted by the wafer, and if the wafer is supported by a thimble, light passes through the lower surface of the wafer, and thus a temperature measurement result is inaccurate; when the thimble is put down, a black body is formed, so that the temperature measurement is accurate. Radiation light (emission light) transmitted through the wafer can enter the black body through the support barrel. As can be seen from fig. 5, the Probe (Probe) of the Pyrometer penetrates through the reflector plate and reaches the inside of the black body, which not only monitors the temperature of the wafer during rapid thermal processing, but also monitors the temperature of the reflector plate and the inside of the reaction chamber during self-cleaning of the apparatus. The edge ring is supported by Quartz support columns (Quartz support cylinders) at two sides below, and the reaction chamber is positioned below the reflecting plate. During self-cleaning, the wafer is processed in the cavity, and is cleaned while rotating under the driving of a suspension motor, so that the cleaning efficiency is higher, wherein the suspension motor comprises a stator and a magnetic suspension rotor.
In an embodiment of the present disclosure, referring to fig. 4 and 5, after the wafer is subjected to Rapid Thermal Processing (RTP), substances such as boron, phosphorus, arsenic, etc. in the wafer are sublimated and enter the side wall (chamber wall) of the reaction chamber and the reflective plate from the inside of the wafer, and these substances react with the oxide to produce inorganic oxide and condense on the side wall of the reaction chamber and the reflective plate to form an oxide coating. When the wafer is transparent for radiation, the radiation light (emission light) is scattered, so that the pyrometer cannot accurately receive the radiation light from the wafer, and the detection of the wafer temperature is seriously affected. The cleaning method is conventionally performed by directly opening the reaction chamber for wiping or purging to keep the surface of the reflecting plate free from the oxidized coating, which causes great loss of equipment and low production efficiency.
In one embodiment of the present disclosure, after the reaction chamber heats a plurality of wafers, an oxidation coating is formed on the side wall of the reaction chamber and the reflective plate of the reaction chamber, and after the rapid annealing operation is completed, the reaction chamber is kept closed on the premise that the control plate is arranged in the reaction chamber, and the reaction chamber is not opened all the time in the process. Heating the reaction chamber to 800-1100 deg.c, and introducing NH into the reaction chamber at 800-1100 deg.c for 5-120 sec 3 Gas 0.5 SLM-100 SLM; in the process, gas NH is reduced 3 React with the oxide in the reaction chamber to remove the oxide in the reaction chamber, illustratively, a reducing gas NH 3 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Nitrogen gas and water vapor are generatedAnd boron simple substance, the reaction process is as follows:
2NH 3 +B 2 O 3 ＝N 2 +3H 2 O+2B
stopping introducing the reducing gas NH 3 Then, continuously introducing N for 5-120 s 2 0.5 SLM-100 SLM purging reducing gas NH in the reaction chamber 3 With boron trioxide (B) in the reaction chamber 2 O 3 ) Byproducts generated by the reaction, including water vapor and boron simple substance, complete the first cycle self-cleaning; (ii) a
Introducing reducing gas H into the reaction chamber which completes the first cycle self-cleaning for 5-120 s 2 0.5SLM to 100SLM; in the process, the reducing gas H 2 React with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, and exemplary, a reducing gas H 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Water vapor and boron simple substance are generated, and the reaction process is as follows:
3H 2 +B 2 O 3 ＝3H 2 O+2B
stopping the introduction of the reducing gas H 2 Continuously introducing inert gas N for 5-120 s 2 0.5SLM to 100SLM purging the reducing gas H in the reaction chamber 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) Byproducts generated by the reaction comprise water vapor and boron simple substance; completing the second circulation self-cleaning;
continuously introducing reducing gas NH into the reaction chamber which finishes the second cycle purging for 5-120 s 3 Gas 0.5 SLM-100 SLM; in the process, gas NH is reduced 3 React with the oxide in the reaction chamber to remove the oxide in the reaction chamber, illustratively, a reducing gas NH 3 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Nitrogen, water vapor and a boron simple substance are generated, and the reaction process is as follows:
2NH 3 +B 2 O 3 ＝N 2 +3H 2 O+2B
stopping the introduction of the reducing gas NH 3 Then, continuously introducing N for 5-120 s 2 0.5 SLM-100 SLM purging reducing gas NH in the reaction chamber 3 With boron trioxide (B) in the reaction chamber 2 O 3 ) Byproducts generated by the reaction, including water vapor and boron simple substance, complete the third cycle self-cleaning;
after the reaction chamber which finishes the third cycle self-cleaning is internally purged, the reducing gas H is continuously introduced for 5s to 120s 2 0.5 SLM-100 SLM; in the process, the reducing gas H 2 React with the oxide in the reaction chamber to remove the oxide in the reaction chamber, illustratively, a reducing gas H 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Water vapor and boron simple substance are generated, and the reaction process is as follows:
3H 2 +B 2 O 3 ＝3H 2 O+2B
stopping the introduction of the reducing gas H 2 Continuously introducing inert gas N for 5-120 s 2 0.5SLM to 100SLM purging the reducing gas H in the reaction chamber 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) And (4) performing reaction to generate byproducts including water vapor and boron simple substance, and completing the fourth cycle self-cleaning.
The process of alternately and circularly introducing the reducing gas and the inert gas into the cleaning reaction chamber for multiple times is carried out, wherein the reducing gas is the first reducing gas when the cleaning step for the Nth time is carried out; when the (N + 1) th cleaning step is performed, the reducing gas is a second reducing gas.
Continuously introducing 0.5 SLM-100 SLM (selected from SLM) of first reducing gas for 5 s-120 s into the reaction chamber which finishes the self-cleaning of the reaction chamber for the (N-1) th time after the completion; during this process, a first reducing gas, illustratively NH, reacts with the oxide in the reaction chamber to remove the oxide from the reaction chamber 3 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Nitrogen, water vapor and a boron simple substance are generated, and the reaction process is as follows:
2NH 3 +B 2 O 3 ＝N 2 +3H 2 O+2B
after the first reducing gas is stopped, the inert gas of 0.5 SLM-100 SLM is continuously introduced for 5 s-120 s, and N is selected for example 2 Helium, argon and the like, purging the interior of the reaction chamber, and purging a byproduct generated by reacting the first reducing gas in the reaction chamber with the oxide in the reaction chamber to complete the self-cleaning of the reaction chamber for the Nth time.
And after the Nth reaction chamber is self-cleaned, if the inner wall of the reaction chamber or the oxidation coating on the reflecting plate is clean, no second reducing gas is introduced to clean the reaction chamber, and the self-cleaning of the semiconductor equipment is completed.
After the Nth time of self-cleaning of the reaction chamber is finished, if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is not completely cleaned, continuously purging the interior of the finished reaction chamber for 5-120 s, and continuously introducing a second reducing gas for 0.5-100 SLM to clean the reaction chamber; during this process, the second reducing gas reacts with the oxide in the reaction chamber to eliminate the oxide in the reaction chamber, and, for example, the second reducing gas H 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) Performing a reaction to eliminate B in the reaction chamber 2 O 3 Water vapor and boron simple substance are generated, and the reaction process is as follows:
3H 2 +B 2 O 3 ＝3H 2 O+2B
stopping the introduction of the second reducing gas H 2 Continuously introducing 0.5 SLM-100 SLM inert gas N for 5 s-120 s 2 Purging the interior of the reaction chamber, and purging a byproduct generated by the reaction of a second reducing gas H in the reaction chamber and the oxide in the reaction chamber 2 With boron trioxide (B) in the reaction chamber 2 O 3 ) By-products of the reaction, including waterSteam and boron simple substance to complete self-cleaning of the (N + 1) th reaction chamber.
And after the N +1 times of self-cleaning of the reaction chamber is finished, if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is clean, the self-cleaning of the semiconductor equipment is finished.
After the N +1 times of self-cleaning of the reaction chamber is completed, if the oxidation coating on the inner wall of the reaction chamber or the reflecting plate is not completely cleaned, the reduction gas and the inert gas are continuously and alternately blown to the inside of the completed reaction chamber until the oxidation coating in the reaction chamber is blown clean.
The method effectively eliminates the problem of the oxidation coating of the reflecting plate in a self-cleaning mode of the reaction chamber, does not need to open the reaction chamber for maintenance, and reduces the equipment maintenance frequency; meanwhile, the PM (machine maintenance) period of the reaction chamber can be prolonged, the utilization rate of the machine is improved, the temperature deviation caused by the coating of the reaction chamber is reduced, and the stable process temperature of the reaction chamber is maintained in one maintenance period; the present disclosure can also keep the temperature performance of the reaction chamber stable, reduce the product buffer (quality deterioration) caused by temperature deviation, and further improve the product quality.
Finally, it should be noted that: although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art will recognize that changes may be made in the form and details of the embodiments without departing from the spirit and scope of the disclosure, and that such changes, substitutions, and modifications also fall within the scope of the disclosure.
Claims (15)
1. A method of self-cleaning a semiconductor device, the method comprising:
heating the reaction chamber to a predetermined temperature;
and self-cleaning the reaction chamber reaching the preset temperature, wherein the self-cleaning comprises alternately introducing a reducing gas and an inert gas into the reaction chamber.
2. A method of self-cleaning a semiconductor device as recited in claim 1, wherein the self-cleaning comprises cleaning an oxide coating within the reaction chamber;
the oxidation coating is an inorganic substance, wherein the inorganic substance comprises one or more elements of boron, phosphorus and/or arsenic.
3. A self-cleaning method of a semiconductor device according to claim 1,
during the self-cleaning process, the reaction chamber is kept in a closed state.
4. A self-cleaning method for a semiconductor device according to claim 3, wherein the predetermined temperature range is 800 ℃ to 1100 ℃.
5. The self-cleaning method of claim 1, wherein said alternately introducing a reducing gas and an inert gas into said reaction chamber comprises:
after the reaction chamber is heated to a preset temperature, introducing reducing gas within a first preset time;
introducing inert gas within a second preset time, and purging the reaction chamber;
the cleaning steps are alternately performed N times, wherein N is an integer not less than 1 and not more than 20.
6. A self-cleaning method of a semiconductor device according to claim 5,
the time range of the first preset time is 5 s-120 s, and the time range of the second preset time is 5 s-120 s;
the ratio range of the first preset time to the second preset time is 1:1 to 5:1.
7. a self-cleaning method for a semiconductor device according to claim 6, wherein said reducing gas comprises a first reducing gas and a second reducing gas;
when the cleaning step is carried out for the Nth time, the reducing gas is the first reducing gas;
when the (N + 1) th cleaning step is performed, the reducing gas is a second reducing gas.
8. A semiconductor device self-cleaning method as recited in claim 7,
the first reducing gas is one or more of ammonia gas, nitric oxide and carbon monoxide;
the second reducing gas is hydrogen.
9. The self-cleaning method for semiconductor device as claimed in claim 5, wherein the inert gas comprises one or more of nitrogen, argon, helium and neon.
10. A self-cleaning method of a semiconductor device according to claim 5,
the flow range of the reducing gas is 0.5 SLM-100 SLM and the gas flow range of the inert gas is 0.5 SLM-100 SLM.
11. A semiconductor device self-cleaning system, comprising,
the preheating device is used for heating the reaction chamber to a preset temperature;
and the cleaning device is used for alternately introducing reducing gas and inert gas into the reaction chamber after the preset temperature is reached so as to automatically clean the reaction chamber.
12. A semiconductor device self-cleaning system as recited in claim 11,
maintaining the reaction chamber in a closed state while the self-cleaning system is operating;
the predetermined temperature range is 800-1100 ℃.
13. A semiconductor device self-cleaning system as recited in claim 11,
the flow ranges of the reducing gas and the inert gas are both 0.5 SLM-100 SLM;
the ratio of the time of introducing the reducing gas to the time of introducing the inert gas is in the range of 1:1 to 5:1.
14. a semiconductor device self-cleaning system as recited in claim 11,
the reducing gas comprises one or more of ammonia, hydrogen, carbon monoxide and nitric oxide;
the inert gas includes one or more of nitrogen, argon, helium, and neon.
15. A semiconductor device self-cleaning apparatus, comprising a processor and a memory, for implementing the semiconductor device self-cleaning method of any one of claims 1-10.
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| CN202210989156.1A CN115351020B (en) | 2022-08-17 | Self-cleaning method, system and device for semiconductor equipment |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6174080B1 (en) * | 1998-08-06 | 2001-01-16 | Applied Materials, Inc. | Apparatus and methods for measuring substrate temperature |
| CN1574208A (en) * | 2003-06-16 | 2005-02-02 | 应用材料公司 | Cylinder for thermal processing chamber |
| US20080115808A1 (en) * | 2006-11-20 | 2008-05-22 | Applied Materials, Inc. | In-situ chamber cleaning for an rtp chamber |
| CN101789361A (en) * | 2009-01-27 | 2010-07-28 | 东京毅力科创株式会社 | Film formation apparatus and method for using same |
| TW201118918A (en) * | 2009-08-27 | 2011-06-01 | Hitachi Int Electric Inc | Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus |
| CN201906784U (en) * | 2010-12-17 | 2011-07-27 | 山东东益机械制造有限公司 | Forging-heating furnace utilizing waste heat |
| CN103109359A (en) * | 2010-08-09 | 2013-05-15 | 应用材料公司 | Transparent reflector plate for rapid thermal processing chamber |
| CN106252197A (en) * | 2015-06-09 | 2016-12-21 | 株式会社日立国际电气 | The manufacture method of semiconductor device and lining processor |
| CN113284797A (en) * | 2020-02-20 | 2021-08-20 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor memory |
| CN113597666A (en) * | 2019-03-19 | 2021-11-02 | 株式会社国际电气 | Method for manufacturing semiconductor device, substrate processing apparatus, and storage medium |
| WO2022156201A1 (en) * | 2021-01-19 | 2022-07-28 | 长鑫存储技术有限公司 | Process apparatus and process method |
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6174080B1 (en) * | 1998-08-06 | 2001-01-16 | Applied Materials, Inc. | Apparatus and methods for measuring substrate temperature |
| CN1574208A (en) * | 2003-06-16 | 2005-02-02 | 应用材料公司 | Cylinder for thermal processing chamber |
| US20080115808A1 (en) * | 2006-11-20 | 2008-05-22 | Applied Materials, Inc. | In-situ chamber cleaning for an rtp chamber |
| CN101789361A (en) * | 2009-01-27 | 2010-07-28 | 东京毅力科创株式会社 | Film formation apparatus and method for using same |
| TW201118918A (en) * | 2009-08-27 | 2011-06-01 | Hitachi Int Electric Inc | Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus |
| CN103109359A (en) * | 2010-08-09 | 2013-05-15 | 应用材料公司 | Transparent reflector plate for rapid thermal processing chamber |
| CN201906784U (en) * | 2010-12-17 | 2011-07-27 | 山东东益机械制造有限公司 | Forging-heating furnace utilizing waste heat |
| CN106252197A (en) * | 2015-06-09 | 2016-12-21 | 株式会社日立国际电气 | The manufacture method of semiconductor device and lining processor |
| CN113597666A (en) * | 2019-03-19 | 2021-11-02 | 株式会社国际电气 | Method for manufacturing semiconductor device, substrate processing apparatus, and storage medium |
| CN113284797A (en) * | 2020-02-20 | 2021-08-20 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor memory |
| WO2022156201A1 (en) * | 2021-01-19 | 2022-07-28 | 长鑫存储技术有限公司 | Process apparatus and process method |
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