CN115349253B - 用于视觉传感器的像素电路和方法 - Google Patents

用于视觉传感器的像素电路和方法

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Publication number
CN115349253B
CN115349253B CN202180024551.XA CN202180024551A CN115349253B CN 115349253 B CN115349253 B CN 115349253B CN 202180024551 A CN202180024551 A CN 202180024551A CN 115349253 B CN115349253 B CN 115349253B
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CN
China
Prior art keywords
signal
open loop
amplifier
transistors
output
Prior art date
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Active
Application number
CN202180024551.XA
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English (en)
Chinese (zh)
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CN115349253A (zh
Inventor
D·马托林
D·伯克
C·布维尔
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Professe Co
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Professe Co
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Publication of CN115349253A publication Critical patent/CN115349253A/zh
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/707—Pixels for event detection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202180024551.XA 2020-04-02 2021-04-01 用于视觉传感器的像素电路和方法 Active CN115349253B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063004110P 2020-04-02 2020-04-02
US63/004,110 2020-04-02
PCT/EP2021/058769 WO2021198498A1 (en) 2020-04-02 2021-04-01 Pixel circuit and method for vision sensor

Publications (2)

Publication Number Publication Date
CN115349253A CN115349253A (zh) 2022-11-15
CN115349253B true CN115349253B (zh) 2026-02-27

Family

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Family Applications (1)

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CN202180024551.XA Active CN115349253B (zh) 2020-04-02 2021-04-01 用于视觉传感器的像素电路和方法

Country Status (6)

Country Link
US (1) US11885673B2 (https=)
EP (1) EP4128744A1 (https=)
JP (1) JP7749578B2 (https=)
KR (1) KR20220162705A (https=)
CN (1) CN115349253B (https=)
WO (1) WO2021198498A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240284060A1 (en) * 2023-02-21 2024-08-22 Canon Kabushiki Kaisha Image capturing apparatus, image capturing system, and equipment
CN116883304B (zh) * 2023-07-14 2025-02-14 广东博华超高清创新中心有限公司 一种基于超像素的事件数据重建和质量评估方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109644245A (zh) * 2016-04-04 2019-04-16 超龙凯姆公司 基于采样和保持的时域对比视觉传感器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3146502B2 (ja) * 1990-08-30 2001-03-19 富士電機株式会社 フォトセンサ回路
JPH06339148A (ja) * 1993-03-29 1994-12-06 Hitachi Ltd 色補正器、それを用いた画像表示装置、及び該画像表示装置から成る白バランス調整システム、並びに、白バランス調整方法、及び色調整方法
JPH11214740A (ja) * 1998-01-28 1999-08-06 Sumitomo Electric Ind Ltd 光出力モニタ回路
KR101331982B1 (ko) 2005-06-03 2013-11-25 우니페르지타에트 취리히 시간 의존적 이미지 데이터를 검출하기 위한 광 어레이
US7233203B2 (en) * 2005-08-05 2007-06-19 Realtek Semiconductor Corp. Differential amplifier
AT504582B1 (de) 2006-11-23 2008-12-15 Arc Austrian Res Centers Gmbh Verfahren zur generierung eines bildes in elektronischer form, bildelement für einen bildsensor zur generierung eines bildes sowie bildsensor
ES2396816B1 (es) 2011-05-26 2014-01-21 Consejo Superior De Investigaciones Científcas (Csic) Circuito de ganancia de transimpedancia de bajo consumo y bajo desapareamiento para sistemas de fotosensado diferenciador temporal en sensores dinámicos de visión
CA2923701A1 (en) * 2013-09-16 2015-03-19 Chronocam Dynamic, single photodiode pixel circuit and operating method thereof
US9253396B2 (en) * 2013-12-04 2016-02-02 BAE Systems Imaging Solutions Inc. Variable gain column amplifier adapted for use in imaging arrays
KR102136055B1 (ko) * 2014-01-08 2020-07-21 삼성전자 주식회사 오픈-루프 증폭기를 포함하는 비전 센서 칩, 이의 동작 방법, 및 이를 포함하는 데이터 처리 시스템
EP3313064A1 (en) * 2016-10-20 2018-04-25 Chronocam Pixel circuit for detecting time-dependent visual data
WO2018122798A1 (en) * 2016-12-30 2018-07-05 Insightness Ag Dynamic vision sensor architecture
US9998698B1 (en) * 2017-02-01 2018-06-12 Omnivision Technologies, Inc. Circuitry and method for readout of hybrid-bonded image sensors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109644245A (zh) * 2016-04-04 2019-04-16 超龙凯姆公司 基于采样和保持的时域对比视觉传感器

Also Published As

Publication number Publication date
US20210310861A1 (en) 2021-10-07
JP2023521575A (ja) 2023-05-25
CN115349253A (zh) 2022-11-15
WO2021198498A1 (en) 2021-10-07
KR20220162705A (ko) 2022-12-08
EP4128744A1 (en) 2023-02-08
JP7749578B2 (ja) 2025-10-06
US11885673B2 (en) 2024-01-30

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