CN115347339A - Wide-stop-band-pass filter of substrate integrated waveguide - Google Patents
Wide-stop-band-pass filter of substrate integrated waveguide Download PDFInfo
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- CN115347339A CN115347339A CN202211114102.7A CN202211114102A CN115347339A CN 115347339 A CN115347339 A CN 115347339A CN 202211114102 A CN202211114102 A CN 202211114102A CN 115347339 A CN115347339 A CN 115347339A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a wide stop band-pass filter of a substrate integrated waveguide, which adopts a multilayer laminating mode to ensure that the circuit size of the filter is more compact and the integration is easy, and can inhibit TE by arranging an external coupling window, an internal coupling window and an internal coupling hole array 105 /TE 501 All higher order modes before the mode realize a band-pass filter which still has good inhibition capability in a range outside the band.
Description
Technical Field
The invention relates to a wide-stop-band-pass filter of a substrate integrated waveguide, belonging to the technical field of microwaves.
Background
With the gradual maturity and wide application of the 5G technology, a broadband high-speed wireless transmission system with a large data throughput capability is urgently needed for wireless mobile communication services, and therefore, the working frequency of related wireless communication applications continuously shifts to a high frequency band, and at this time, the conventional filter cannot meet the existing requirements. Due to the congestion of radio frequency spectrum, the requirement for isolation between various microwave components and systems is becoming higher and higher, and therefore, it is necessary to develop a band-pass filter which still has good rejection capability in a range out of band.
Disclosure of Invention
The invention provides a wide stop band-pass filter of a substrate integrated waveguide, which solves the problems disclosed in the background technology.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a wide-stopband band-pass filter of a substrate integrated waveguide comprises a top metal layer, a middle first dielectric substrate layer, a middle metal layer, a middle second dielectric substrate layer and a bottom metal layer which are sequentially stacked from top to bottom;
a metallized through hole array is arranged on the middle first dielectric substrate layer, the left side part, the top metal layer and the middle metal layer of the metallized through hole array form a first substrate integrated waveguide resonant cavity, and the right side part, the top metal layer and the middle metal layer of the metallized through hole array form a fourth substrate integrated waveguide resonant cavity; external coupling windows are arranged in the weakest areas of the high-order mode electric fields of the first substrate integrated waveguide resonant cavity and the fourth substrate integrated waveguide resonant cavity;
a metallized through hole array is arranged on the middle second dielectric substrate layer, the left side part, the middle metal layer and the bottom metal layer of the metallized through hole array form a second substrate integrated waveguide resonant cavity, and the right side part, the top metal layer and the middle metal layer of the metallized through hole array form a third substrate integrated waveguide resonant cavity; an internal coupling window is arranged between the second substrate integrated waveguide resonant cavity and the third substrate integrated waveguide resonant cavity and is positioned in the weakest region of the high-order mode electric field;
the left side and the right side of the middle metal layer are both provided with an internal coupling hole array.
And the first dielectric substrate layer is provided with an input port and an output port, the input port feeds power at the external coupling window of the first substrate integrated waveguide resonant cavity, and the output port feeds power at the external coupling window of the fourth substrate integrated waveguide resonant cavity.
The external coupling window is positioned at the center of the side wall of the substrate integrated waveguide resonant cavity.
The internal coupling window is located at the center of the sidewall between the second substrate integrated waveguide resonator and the third substrate integrated waveguide resonator.
The internal coupling hole array of the left side part of the middle metal layer comprises a first central metal hole and two pairs of first metal small holes, one pair of first metal small holes are arranged at the upper side and the lower side of the first central metal hole, the other pair of first metal small holes are arranged at the left side and the right side of the first central metal hole, and the distances between all the first metal small holes and the first central metal hole are consistent.
The inner coupling hole array on the right side of the middle metal layer comprises a second central metal hole and two pairs of second metal small holes, one pair of second metal small holes are arranged in the diagonal direction of the second central metal hole and located on two sides of the second central metal hole, the other pair of second metal small holes are arranged in the diagonal direction of the second central metal hole and located on two sides of the second central metal hole, and the distances between all the second metal small holes and the second central metal hole are consistent.
The invention achieves the following beneficial effects: the invention adopts a multilayer laminating mode, so that the circuit size of the filter is more compact, the integration is easy, and TE can be inhibited by arranging the external coupling window, the internal coupling window and the internal coupling hole array 105 /TE 501 All higher order modes before the mode realize a band-pass filter which still has good inhibition capability in a range outside the band.
Drawings
FIG. 1 is a schematic view of the structure of the present invention;
FIG. 2 is a diagram of the electric field amplitude distribution of the first few higher order modes of the substrate integrated waveguide resonator;
FIG. 3 is TE 103 /TE 301 A pattern of an internal coupling aperture array designed for electromagnetic field distribution of the mode;
FIG. 4 shows TE 303 An internal coupling aperture array diagram designed from the electromagnetic field distribution of the mode;
FIG. 5 shows TE 101 The structure diagram of an electric field transmitted by the main mode in the substrate integrated waveguide resonant cavity;
FIG. 6 is a diagram of the electric field structure for the suppressed higher order mode propagating in the substrate integrated waveguide resonator;
FIG. 7 is a graph of the pass band S parameter of the filter;
fig. 8 is a graph of the out-of-band S parameters of the filter.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
As shown in fig. 1, the wide stopband bandpass filter of the substrate integrated waveguide is characterized by comprising a top metal layer 3, an intermediate first dielectric substrate layer 8, an intermediate metal layer 11, an intermediate second dielectric substrate layer 16 and a bottom metal layer 18 which are stacked in sequence from top to bottom. The thicknesses of the top metal layer 3, the middle metal layer 11 and the bottom metal layer 18 are all 0.018mm, the middle first dielectric substrate layer 8 and the middle second dielectric substrate layer 16 are both Rogers RT/duroid 5880 dielectric substrates with the dielectric constant of 2.2 and the loss tangent of 0.0009, and the thickness of the substrates is 0.508mm.
The top metal layer 3 adopts two microstrip lines-coplanar waveguide (cpw) transition input and output feed port structures, namely an input port 1 and an output port 2.
The middle first dielectric substrate layer 8 is provided with a metallized through hole array 7, the metallized through hole array 7 is integrally in a shape like a Chinese character 'ri', the left side part of the metallized through hole array 7, the top metal layer 3 and the middle metal layer 11 form a first substrate integrated waveguide resonant cavity 5, and the first substrate integrated waveguide resonant cavity 5 is connected with the input port 1. The right side part of the metallized through hole array 7, the top metal layer 3 and the middle metal layer 11 form a fourth substrate integrated waveguide resonant cavity 4, and the fourth substrate integrated waveguide resonant cavity 4 is connected with the output port 2.
The middle second dielectric substrate layer 16 is provided with a metallized through hole array 7, the metallized through hole array 7 is integrally in a shape like a Chinese character ri, the left side part of the metallized through hole array 7, the middle metal layer 11 and the bottom metal layer 18 form a second substrate integrated waveguide resonant cavity 15, and the right side part of the metallized through hole array 7, the top metal layer 3 and the middle metal layer 11 form a third substrate integrated waveguide resonant cavity 14.
In the above metallized through hole array, the distance between adjacent metal through holespThe requirements are as follows:d/λg<0.2，p/d<2, the electromagnetic energy can be bound in the resonant cavity, wherein,dis the diameter of the metal through-hole,λgis the waveguide wavelength. The space between adjacent metal through holes in the structurepWhen the above conditions are met, the design is reasonablepFreedom of value, facilitating filteringAnd the subsequent optimization and fine adjustment work of the wave filter is carried out, and the error of the object manufacturing process is reduced.
All the resonant cavities are SIW square resonant cavities, and in the SIW square resonant cavities, the order of the modes increasing along with the frequency is TE 101 、TE 102 /TE 201 、TE 202 、TE 103 /TE 301 、TE 203 /TE 302 、TE 104 /TE 401 、TE 303 、 TE 204 /TE 402 、TE 304 /TE 403 、TE 105 /TE 501 …; it is therefore necessary to suppress the resonant frequency of the modes from low to high in order to achieve the desired wide stop band filter.
As shown in fig. 2, the arrow (a, B) direction is a region where the electric field of the higher-order mode is weakest, and the feeding port and the coupling window are located, where these higher-order modes cannot be excited and coupled in the resonator, specifically, the external coupling window 6 is located in the region where the electric field of the higher-order mode of the first substrate-integrated waveguide resonator 5 and the fourth substrate-integrated waveguide resonator 4 is weakest, the external coupling window 6 is located at the center of the sidewall of the substrate-integrated waveguide resonator, the input port 1 feeds power at the external coupling window 6 of the first substrate-integrated waveguide resonator 5, the output port 2 feeds power at the external coupling window 6 of the fourth substrate-integrated waveguide resonator 4, the internal coupling window 17 is located between the second substrate-integrated waveguide resonator 15 and the third substrate-integrated waveguide resonator 14, the internal coupling window 17 is located in the region where the electric field of Gao Cimo is weakest, and the internal coupling window 17 is located at the center of the sidewall between the second substrate-integrated waveguide resonator 15 and the third substrate-integrated waveguide resonator 14.
The arrangement of the inner coupling window 17 and the outer coupling window 6 can substantially suppress the symmetrical TE distribution mon (m=2,4,6,…)/TE mon (n =2,4,6, …) mode resonance, as in TE of fig. 2 102 /TE 201 、TE 202 、TE 203 /TE 302 、TE 104 /TE 401 、TE 204 /TE 402 、TE 304 /TE 403 And a higher order mode. But due to TE 103 /TE 301 And TE 303 The mode can not be suppressed, and the stop band of the SIW filter designed in the mode can not exceed 2.23f 0 Therefore, it is necessary to introduce the electromagnetic hybrid coupling method to the specific mode TE 103 /TE 301 And TE 303 Inhibition of (3).
According to the electromagnetic hybrid coupling theory, if there is both electric coupling and magnetic coupling in the coupling of the two resonators, the total coupling coefficient can be expressed by the following formula:
k general assembly =| k m - k e |
Wherein the content of the first and second substances,k m as a function of the coupling coefficient of the magnetic field,k e is the electric field coupling coefficient; mode suppression can be achieved by introducing only equal amounts of electrical and magnetic coupling such that the total coupling coefficient is about zero.
In a resonant cavity, according to TE 103 /TE 301 The electromagnetic field distribution of the die is characterized in that an internal coupling hole array is arranged at the left side part of the middle metal layer 11 and comprises a first central metal hole 9 and two pairs of first metal small holes 10, one pair of first metal small holes 10 are arranged at the upper side and the lower side of the first central metal hole 9, the other pair of first metal small holes 10 are arranged at the left side and the right side of the first central metal hole 9, and the distances between all the first metal small holes 10 and the first central metal hole 9 are consistent.
As shown in FIG. 3, the first central metal hole 9 has a half-value ofr1, the first metal eyelet 10 has a half value ofr11，r11 is less thanr1, the distance between the first metal eyelet 10 and the first central metal hole 9 isk. According to the formula of the total coupling coefficient, the appropriate coupling coefficient can be obtainedr1、r11 andktime, TE 103 The coupling of the modes can be electrical, magnetic, or zero (mode is suppressed), i.e., when the amount of magnetic coupling introduced is equal to the amount of electrical coupling, the mode is effectively suppressed. Since the two modes are orthogonally distributed in the cavity and the coupling aperture is also orthogonally distributed in the cavity, when TE 103 Mode coupling is suppressed, TE 301 The mode is also suppressed.
In the same way, according to TE 303 Electromagnetic field distribution of modes, inThe right side part of the middle metal layer 11 is provided with an internal coupling hole array which comprises a second central metal hole 12 and two pairs of second metal small holes 13, one pair of second metal small holes 13 is arranged on the diagonal direction of the second central metal hole 12 and positioned at two sides of the second central metal hole 12, the other pair of second metal small holes 13 is arranged on the diagonal direction of the second central metal hole 12 and positioned at two sides of the second central metal hole 12, and the distances between all the second metal small holes 13 and the second central metal hole 12 are consistent.
As shown in FIG. 4, the second central metal hole 12 has a half value ofr2, the second metal eyelet 13 has a half valence ofr22，r22 is less thanr2, the distance between the second metal small hole 13 and the second central metal hole 12 isk1. With TE 303 Mold is an example, the radius isr2Hole of (2) providing TE 303 The electric coupling of the modes, four radii on diagonal lines beingr22 of the holes provide the TE 303 Magnetic coupling of modes, when appropriater2、r22 andk1 hour, TE 303 The coupling of the modes may be electrical, magnetic, or zero (mode is suppressed).
As shown in fig. 5, the coupling mode of the filter is properly designed to make the main mode TE 101 A good transmission is obtained. The TE is realized by reasonably designing the restraining method of the filter 105 / TE 501 Suppression of all higher modes within, as shown in fig. 6, can be seen by the coupled energy entering at input port 1 and no energy being transferred at output port 2.
Fig. 7 is a graph of the S parameter of the pass band of the filter of fig. 1, centered at 5.9GHz and having a relative bandwidth of 2.8%. FIG. 8 is a graph of the out-of-band S-parameter of the filter of FIG. 1, TE at 13.2GHz 103 Die and TE 301 The mode is completely inhibited, and the inhibition level is better than 30dB; TE at 17.7GHz 303 The mode is completely suppressed and the suppression level is better than 45dB. The 20dB out-of-band rejection level can be extended to 21.4GHz and is close to 3.62f0(f0: filter center frequency).
The band-pass filter adopts a multilayer laminating mode, so that the circuit size is more compact and the band-pass filter is easy to integrateBy providing the external coupling window 6, the internal coupling window 17 and the internal coupling hole array, TE can be suppressed 105 /TE 501 All higher order modes before the mode can still have good inhibition capability in a range of the out-of-band.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (6)
1. A wide stop band-pass filter of a substrate integrated waveguide is characterized by comprising a top metal layer, a middle first dielectric substrate layer, a middle metal layer, a middle second dielectric substrate layer and a bottom metal layer which are sequentially stacked from top to bottom;
a metallized through hole array is arranged on the middle first dielectric substrate layer, the left side part, the top metal layer and the middle metal layer of the metallized through hole array form a first substrate integrated waveguide resonant cavity, and the right side part, the top metal layer and the middle metal layer of the metallized through hole array form a fourth substrate integrated waveguide resonant cavity; external coupling windows are arranged in the weakest areas of the high-order mode electric fields of the first substrate integrated waveguide resonant cavity and the fourth substrate integrated waveguide resonant cavity;
a metalized through hole array is formed in the middle second dielectric substrate layer, the left side part of the metalized through hole array, the middle metal layer and the bottom metal layer form a second substrate integrated waveguide resonant cavity, and the right side part of the metalized through hole array, the top metal layer and the middle metal layer form a third substrate integrated waveguide resonant cavity; an internal coupling window is arranged between the second substrate integrated waveguide resonant cavity and the third substrate integrated waveguide resonant cavity and is positioned in the weakest area of the high-order mode electric field;
the left side and the right side of the middle metal layer are both provided with an internal coupling hole array.
2. The substrate-integrated waveguide wide stop band bandpass filter according to claim 1, wherein the first dielectric substrate layer is provided with an input port and an output port, the input port feeds at the external coupling window of the first substrate-integrated waveguide resonant cavity, and the output port feeds at the external coupling window of the fourth substrate-integrated waveguide resonant cavity.
3. The wide stop band bandpass filter of claim 1 or 2, wherein the external coupling window is located at the center of the sidewall of the resonant cavity of the substrate integrated waveguide.
4. The wide stop band bandpass filter of claim 1, wherein the internal coupling window is located at the center of the sidewall between the second substrate-integrated waveguide resonator and the third substrate-integrated waveguide resonator.
5. The wide stop band bandpass filter of claim 1, wherein the internal coupling hole array of the left side portion of the middle metal layer comprises a first central metal hole and two pairs of first metal holes, one pair of the first metal holes is disposed on the upper and lower sides of the first central metal hole, the other pair of the first metal holes is disposed on the left and right sides of the first central metal hole, and all the first metal holes are spaced from the first central metal hole by the same distance.
6. The wide stop band bandpass filter of claim 1, wherein the internal coupling hole array at the right side of the middle metal layer comprises a second central metal hole and two pairs of second metal holes, one pair of the second metal holes is disposed in the diagonal direction of the second central metal hole and located at two sides of the second central metal hole, the other pair of the second metal holes is disposed in the diagonal direction of the second central metal hole and located at two sides of the second central metal hole, and all the second metal holes are at the same distance from the second central metal hole.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904392A (en) * | 2014-04-08 | 2014-07-02 | 电子科技大学 | Substrate integrated waveguide filter |
| CN106848510A (en) * | 2017-03-03 | 2017-06-13 | 南京理工大学 | A kind of dual-passband difference filter of laminate substrate integrated wave guide structure |
| US20200328490A1 (en) * | 2017-10-18 | 2020-10-15 | Telefonaktiebolaget Lm Ericsson (Publ) | A filter arrangement |
| CN111934073A (en) * | 2020-09-27 | 2020-11-13 | 成都频岢微电子有限公司 | Miniaturized wide stop band filter based on micro-strip and substrate integrated waveguide mixing |
| WO2021019567A1 (en) * | 2019-07-29 | 2021-02-04 | Indian Institute Of Technology Delhi | Tunable substrate integrated waveguide filter |
| CN113224488A (en) * | 2021-05-13 | 2021-08-06 | 上海航天电子通讯设备研究所 | Wide-stopband substrate integrated waveguide filtering power divider |
| US20220200114A1 (en) * | 2020-12-21 | 2022-06-23 | John Mezzalingua Associates, LLC dba JMA Wireless | Method and System of Fabricating and Tuning Surface Integrated Waveguide Filter |
-
2022
- 2022-09-14 CN CN202211114102.7A patent/CN115347339B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904392A (en) * | 2014-04-08 | 2014-07-02 | 电子科技大学 | Substrate integrated waveguide filter |
| CN106848510A (en) * | 2017-03-03 | 2017-06-13 | 南京理工大学 | A kind of dual-passband difference filter of laminate substrate integrated wave guide structure |
| US20200328490A1 (en) * | 2017-10-18 | 2020-10-15 | Telefonaktiebolaget Lm Ericsson (Publ) | A filter arrangement |
| WO2021019567A1 (en) * | 2019-07-29 | 2021-02-04 | Indian Institute Of Technology Delhi | Tunable substrate integrated waveguide filter |
| CN111934073A (en) * | 2020-09-27 | 2020-11-13 | 成都频岢微电子有限公司 | Miniaturized wide stop band filter based on micro-strip and substrate integrated waveguide mixing |
| US20220200114A1 (en) * | 2020-12-21 | 2022-06-23 | John Mezzalingua Associates, LLC dba JMA Wireless | Method and System of Fabricating and Tuning Surface Integrated Waveguide Filter |
| CN113224488A (en) * | 2021-05-13 | 2021-08-06 | 上海航天电子通讯设备研究所 | Wide-stopband substrate integrated waveguide filtering power divider |
Non-Patent Citations (4)
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| AHMAD MAHAN等: "A novel compact dual-mode SIW filter with wide rejection band and selective response", 《MICROWAVE AND OPTICAL TECHNOLOGY LETTERS》, vol. 61, no. 3, pages 573 - 577 * |
| 关雪芹: "基于多模耦合的宽阻带滤波器研究", 《全国优秀硕士学位论文全文数据库》, pages 24 - 39 * |
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